KR101760839B1 - 박막 전극 및 박막 스택을 증착하기 위한 방법 - Google Patents

박막 전극 및 박막 스택을 증착하기 위한 방법 Download PDF

Info

Publication number
KR101760839B1
KR101760839B1 KR1020137013633A KR20137013633A KR101760839B1 KR 101760839 B1 KR101760839 B1 KR 101760839B1 KR 1020137013633 A KR1020137013633 A KR 1020137013633A KR 20137013633 A KR20137013633 A KR 20137013633A KR 101760839 B1 KR101760839 B1 KR 101760839B1
Authority
KR
South Korea
Prior art keywords
transparent conductive
thin film
conductive oxide
oxide film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137013633A
Other languages
English (en)
Korean (ko)
Other versions
KR20140074861A (ko
Inventor
파비오 피이랄리시
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20140074861A publication Critical patent/KR20140074861A/ko
Application granted granted Critical
Publication of KR101760839B1 publication Critical patent/KR101760839B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020137013633A 2010-10-29 2011-10-18 박막 전극 및 박막 스택을 증착하기 위한 방법 Active KR101760839B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10189508.4 2010-10-29
EP10189508A EP2447999A1 (en) 2010-10-29 2010-10-29 Method for depositing a thin film electrode and thin film stack
PCT/EP2011/068191 WO2012055728A1 (en) 2010-10-29 2011-10-18 Method for depositing a thin film electrode and thin film stack

Publications (2)

Publication Number Publication Date
KR20140074861A KR20140074861A (ko) 2014-06-18
KR101760839B1 true KR101760839B1 (ko) 2017-08-04

Family

ID=43836679

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137013633A Active KR101760839B1 (ko) 2010-10-29 2011-10-18 박막 전극 및 박막 스택을 증착하기 위한 방법

Country Status (7)

Country Link
US (1) US8361897B2 (enExample)
EP (1) EP2447999A1 (enExample)
JP (1) JP5615442B2 (enExample)
KR (1) KR101760839B1 (enExample)
CN (1) CN103201839B (enExample)
TW (1) TWI515793B (enExample)
WO (1) WO2012055728A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230154505A (ko) * 2022-05-02 2023-11-09 동의대학교 산학협력단 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9379247B2 (en) * 2012-06-28 2016-06-28 Cbrite Inc. High mobility stabile metal oxide TFT
KR20140104792A (ko) * 2013-02-21 2014-08-29 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
KR102044667B1 (ko) * 2013-05-28 2019-11-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법
US9728650B1 (en) * 2016-01-14 2017-08-08 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel and conducting structure
KR101829970B1 (ko) 2016-02-01 2018-02-19 연세대학교 산학협력단 산화물 박막 트랜지스터 및 그 제조 방법
CN114630920A (zh) * 2020-05-25 2022-06-14 应用材料公司 用于产生层堆叠物的方法和用于制造图案化层堆叠物的方法
CN113233870B (zh) * 2021-04-25 2023-01-13 先导薄膜材料（广东）有限公司 一种掺杂氧化镉靶材及其制备方法与应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065771A1 (en) * 2006-03-17 2009-03-12 Canon Kabushiki Kaisha Field effect transistor using oxide film for channel and method of manufacturing the same
US20100244031A1 (en) * 2009-03-30 2010-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100267247A1 (en) * 2009-04-21 2010-10-21 Applied Materials, Inc. Dual Frequency Low Temperature Oxidation of a Semiconductor Device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0197315A (ja) * 1987-10-08 1989-04-14 Toshiba Glass Co Ltd 酸化錫導電膜の形成方法
ES2185454B1 (es) 2000-08-28 2004-05-01 Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) Metodo de obtencion de oxidos conductores electricos y transparentes mediante pulverizacion catodica.
US8138364B2 (en) 2001-08-27 2012-03-20 Northwestern University Transparent conducting oxide thin films and related devices
KR101101456B1 (ko) * 2004-03-09 2012-01-03 이데미쓰 고산 가부시키가이샤 박막 트랜지스터, 박막 트랜지스터 기판, 이들의 제조방법, 이들을 사용한 액정 표시 장치, 관련된 장치 및방법, 및 스퍼터링 타깃, 이것을 사용하여 성막한 투명도전막, 투명 전극, 및 관련된 장치 및 방법
WO2005091375A1 (en) 2004-03-19 2005-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device
EP1624333B1 (en) 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
JP4886476B2 (ja) * 2006-11-13 2012-02-29 パナソニック電工株式会社 有機エレクトロルミネッセンス素子
US8747630B2 (en) 2007-01-16 2014-06-10 Alliance For Sustainable Energy, Llc Transparent conducting oxides and production thereof
TWI371112B (en) 2007-10-02 2012-08-21 Univ Chang Gung Solar energy photoelectric conversion apparatus
KR101455304B1 (ko) * 2007-10-05 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
CL2008003281A1 (es) 2007-11-02 2009-10-16 Agc Flat Glass Na Inc Metodo para fabricar una pelicula delgada que comprende suministrar un substrato, depositar una primera capa sobre el, depositar una segunda capa que comprende oxido de sn y/o zn sobre una porcion de la primera capa, en presencia de un agente oxidante a alta temperatura aumentando la conductividad electrica de la segunda capa.
KR20090095026A (ko) * 2008-03-04 2009-09-09 삼성전자주식회사 표시 장치 제조 방법
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
CN101993032B (zh) * 2009-08-14 2013-03-27 京东方科技集团股份有限公司 微结构薄膜图形和tft-lcd阵列基板制造方法
CN102549757A (zh) * 2009-09-30 2012-07-04 佳能株式会社 薄膜晶体管

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065771A1 (en) * 2006-03-17 2009-03-12 Canon Kabushiki Kaisha Field effect transistor using oxide film for channel and method of manufacturing the same
US20100244031A1 (en) * 2009-03-30 2010-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100267247A1 (en) * 2009-04-21 2010-10-21 Applied Materials, Inc. Dual Frequency Low Temperature Oxidation of a Semiconductor Device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230154505A (ko) * 2022-05-02 2023-11-09 동의대학교 산학협력단 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법
KR102762721B1 (ko) * 2022-05-02 2025-02-04 동의대학교 산학협력단 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법

Also Published As

Publication number Publication date
EP2447999A1 (en) 2012-05-02
US8361897B2 (en) 2013-01-29
JP2014502038A (ja) 2014-01-23
JP5615442B2 (ja) 2014-10-29
KR20140074861A (ko) 2014-06-18
CN103201839A (zh) 2013-07-10
CN103201839B (zh) 2016-11-16
WO2012055728A1 (en) 2012-05-03
TW201234481A (en) 2012-08-16
US20120104616A1 (en) 2012-05-03
TWI515793B (zh) 2016-01-01

Similar Documents

Publication Publication Date Title
KR101760839B1 (ko) 박막 전극 및 박막 스택을 증착하기 위한 방법
TWI422034B (zh) 包含絕緣層之氧化物半導體裝置及使用氧化物半導體裝置之顯示設備
US8026506B2 (en) Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same
US8445902B2 (en) Thin film transistor and method of manufacturing the same
TWI394282B (zh) 使用多主動通道層之薄膜電晶體
CN107004721B (zh) 薄膜晶体管阵列基板
US20160043227A1 (en) Thin film transistor and manufacturing method thereof
KR101132582B1 (ko) 배선막의 형성 방법
EP2741335A1 (en) Transistors, methods of manufacturing transistors, and electronic devices including transistors
EP2421048A1 (en) Thin film transistor and method for manufacturing thin film transistor
JP2010080936A (ja) アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ
KR20130018300A (ko) 박막 트랜지스터의 반도체층용 산화물 및 스퍼터링 타깃, 및 박막 트랜지스터
US9076721B2 (en) Oxynitride channel layer, transistor including the same and method of manufacturing the same
KR20150038352A (ko) 박막 트랜지스터 및 표시 장치
US20150076489A1 (en) Oxide for semiconductor layer in thin film transistor, thin film transistor, display device, and sputtering target
CN102683422A (zh) 氧化物薄膜晶体管及制作方法、阵列基板、显示装置
CN102646715A (zh) 薄膜晶体管及其制造方法
JP2012028481A (ja) 電界効果型トランジスタ及びその製造方法
CN107104150A (zh) 金属氧化物tft器件及其制作方法
US20190131322A1 (en) Method for manufacturing thin-film transistor and thin-film transistor
TW202043511A (zh) 氧化物半導體薄膜、薄膜電晶體及濺鍍靶材
CN106910780B (zh) 薄膜晶体管及制造方法、阵列基板、显示面板、显示装置
KR102145978B1 (ko) 어레이기판 및 이의 제조방법
JP2011091365A (ja) 配線構造およびその製造方法、並びに配線構造を備えた表示装置
Moon et al. Control of trap density in channel layer for the higher stability of oxide thin film transistors under gate bias stress

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9