TWI515793B - 沉積薄膜電極與薄膜堆疊的方法 - Google Patents
沉積薄膜電極與薄膜堆疊的方法 Download PDFInfo
- Publication number
- TWI515793B TWI515793B TW100136956A TW100136956A TWI515793B TW I515793 B TWI515793 B TW I515793B TW 100136956 A TW100136956 A TW 100136956A TW 100136956 A TW100136956 A TW 100136956A TW I515793 B TWI515793 B TW I515793B
- Authority
- TW
- Taiwan
- Prior art keywords
- transparent conductive
- conductive oxide
- oxide film
- gas
- sputtering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H10D64/011—
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10189508A EP2447999A1 (en) | 2010-10-29 | 2010-10-29 | Method for depositing a thin film electrode and thin film stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201234481A TW201234481A (en) | 2012-08-16 |
| TWI515793B true TWI515793B (zh) | 2016-01-01 |
Family
ID=43836679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100136956A TWI515793B (zh) | 2010-10-29 | 2011-10-12 | 沉積薄膜電極與薄膜堆疊的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8361897B2 (enExample) |
| EP (1) | EP2447999A1 (enExample) |
| JP (1) | JP5615442B2 (enExample) |
| KR (1) | KR101760839B1 (enExample) |
| CN (1) | CN103201839B (enExample) |
| TW (1) | TWI515793B (enExample) |
| WO (1) | WO2012055728A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379247B2 (en) * | 2012-06-28 | 2016-06-28 | Cbrite Inc. | High mobility stabile metal oxide TFT |
| KR20140104792A (ko) * | 2013-02-21 | 2014-08-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
| US9806179B2 (en) * | 2016-01-14 | 2017-10-31 | Hon Hai Precision Industry Co., Ltd. | Method for fabricating conducting structure and thin film transistor array panel |
| KR101829970B1 (ko) | 2016-02-01 | 2018-02-19 | 연세대학교 산학협력단 | 산화물 박막 트랜지스터 및 그 제조 방법 |
| WO2021239211A1 (en) * | 2020-05-25 | 2021-12-02 | Applied Materials, Inc. | Method for generating a layer stack and method for manufacturing a patterned layer stack |
| CN113233870B (zh) * | 2021-04-25 | 2023-01-13 | 先导薄膜材料（广东）有限公司 | 一种掺杂氧化镉靶材及其制备方法与应用 |
| KR102762721B1 (ko) * | 2022-05-02 | 2025-02-04 | 동의대학교 산학협력단 | 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0197315A (ja) * | 1987-10-08 | 1989-04-14 | Toshiba Glass Co Ltd | 酸化錫導電膜の形成方法 |
| ES2185454B1 (es) | 2000-08-28 | 2004-05-01 | Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) | Metodo de obtencion de oxidos conductores electricos y transparentes mediante pulverizacion catodica. |
| US8138364B2 (en) | 2001-08-27 | 2012-03-20 | Northwestern University | Transparent conducting oxide thin films and related devices |
| CN1918672B (zh) * | 2004-03-09 | 2012-10-03 | 出光兴产株式会社 | 薄膜晶体管、薄膜晶体管基板、液晶显示装置、溅射靶、透明导电膜、透明电极及它们的制造方法 |
| WO2005091375A1 (en) | 2004-03-19 | 2005-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device |
| EP1624333B1 (en) | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
| JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
| JP4886476B2 (ja) * | 2006-11-13 | 2012-02-29 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子 |
| US8747630B2 (en) | 2007-01-16 | 2014-06-10 | Alliance For Sustainable Energy, Llc | Transparent conducting oxides and production thereof |
| TWI371112B (en) | 2007-10-02 | 2012-08-21 | Univ Chang Gung | Solar energy photoelectric conversion apparatus |
| KR101455304B1 (ko) * | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| TWI453173B (zh) | 2007-11-02 | 2014-09-21 | Agc Flat Glass Na Inc | 用於薄膜光伏打應用之透明導電氧化物塗層及製造其之方法 |
| KR20090095026A (ko) * | 2008-03-04 | 2009-09-09 | 삼성전자주식회사 | 표시 장치 제조 방법 |
| US8129718B2 (en) * | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| US8927981B2 (en) * | 2009-03-30 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8043981B2 (en) * | 2009-04-21 | 2011-10-25 | Applied Materials, Inc. | Dual frequency low temperature oxidation of a semiconductor device |
| CN101993032B (zh) * | 2009-08-14 | 2013-03-27 | 京东方科技集团股份有限公司 | 微结构薄膜图形和tft-lcd阵列基板制造方法 |
| WO2011039853A1 (ja) * | 2009-09-30 | 2011-04-07 | キヤノン株式会社 | 薄膜トランジスタ |
-
2010
- 2010-10-29 EP EP10189508A patent/EP2447999A1/en not_active Withdrawn
- 2010-11-04 US US12/939,855 patent/US8361897B2/en active Active
-
2011
- 2011-10-12 TW TW100136956A patent/TWI515793B/zh not_active IP Right Cessation
- 2011-10-18 CN CN201180051782.6A patent/CN103201839B/zh active Active
- 2011-10-18 JP JP2013535360A patent/JP5615442B2/ja active Active
- 2011-10-18 KR KR1020137013633A patent/KR101760839B1/ko active Active
- 2011-10-18 WO PCT/EP2011/068191 patent/WO2012055728A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US8361897B2 (en) | 2013-01-29 |
| EP2447999A1 (en) | 2012-05-02 |
| CN103201839A (zh) | 2013-07-10 |
| JP5615442B2 (ja) | 2014-10-29 |
| WO2012055728A1 (en) | 2012-05-03 |
| JP2014502038A (ja) | 2014-01-23 |
| US20120104616A1 (en) | 2012-05-03 |
| CN103201839B (zh) | 2016-11-16 |
| KR20140074861A (ko) | 2014-06-18 |
| KR101760839B1 (ko) | 2017-08-04 |
| TW201234481A (en) | 2012-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |