ATE490352T1 - Verfahren zur erzeugung einer dielektrischen folie und neuartige vorläufer zur implementierung eines solchen verfahrens - Google Patents

Verfahren zur erzeugung einer dielektrischen folie und neuartige vorläufer zur implementierung eines solchen verfahrens

Info

Publication number
ATE490352T1
ATE490352T1 AT06778689T AT06778689T ATE490352T1 AT E490352 T1 ATE490352 T1 AT E490352T1 AT 06778689 T AT06778689 T AT 06778689T AT 06778689 T AT06778689 T AT 06778689T AT E490352 T1 ATE490352 T1 AT E490352T1
Authority
AT
Austria
Prior art keywords
carbon
doped silicon
implementing
producing
dielectric film
Prior art date
Application number
AT06778689T
Other languages
English (en)
Inventor
Christian Dussarrat
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Application granted granted Critical
Publication of ATE490352T1 publication Critical patent/ATE490352T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
AT06778689T 2005-06-21 2006-06-21 Verfahren zur erzeugung einer dielektrischen folie und neuartige vorläufer zur implementierung eines solchen verfahrens ATE490352T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0551675A FR2887252A1 (fr) 2005-06-21 2005-06-21 Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede
PCT/FR2006/001495 WO2006136741A1 (fr) 2005-06-21 2006-06-21 Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede

Publications (1)

Publication Number Publication Date
ATE490352T1 true ATE490352T1 (de) 2010-12-15

Family

ID=35395858

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06778689T ATE490352T1 (de) 2005-06-21 2006-06-21 Verfahren zur erzeugung einer dielektrischen folie und neuartige vorläufer zur implementierung eines solchen verfahrens

Country Status (9)

Country Link
US (2) US7972975B2 (de)
EP (1) EP1896629B1 (de)
JP (1) JP5248316B2 (de)
KR (1) KR101327640B1 (de)
CN (1) CN101203626A (de)
AT (1) ATE490352T1 (de)
DE (1) DE602006018605D1 (de)
FR (1) FR2887252A1 (de)
WO (1) WO2006136741A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298965B2 (en) 2008-09-03 2012-10-30 American Air Liquide, Inc. Volatile precursors for deposition of C-linked SiCOH dielectrics
CN102762763B (zh) 2010-02-17 2014-12-31 乔治洛德方法研究和开发液化空气有限公司 SiCOH低K膜的气相沉积法
CN102877041B (zh) * 2011-07-14 2014-11-19 中国科学院微电子研究所 薄膜沉积方法以及半导体器件制造方法
KR101728288B1 (ko) * 2011-12-30 2017-04-18 인텔 코포레이션 자기-폐쇄 비대칭 상호연결 구조
US9243324B2 (en) 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
US9879340B2 (en) 2014-11-03 2018-01-30 Versum Materials Us, Llc Silicon-based films and methods of forming the same
US20170125241A1 (en) * 2015-10-30 2017-05-04 Applied Materials, Inc. Low temp single precursor arc hard mask for multilayer patterning application
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
JP7061432B2 (ja) * 2017-02-16 2022-04-28 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｓｉ含有膜の成膜方法
KR102627238B1 (ko) 2017-05-05 2024-01-19 에이에스엠 아이피 홀딩 비.브이. 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정
JP2022067559A (ja) * 2020-10-20 2022-05-06 東京エレクトロン株式会社 成膜方法及び成膜装置
US20230360906A1 (en) 2022-05-05 2023-11-09 Applied Materials, Inc. Silicon-and-carbon-containing materials with low dielectric constants

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
US5204141A (en) * 1991-09-18 1993-04-20 Air Products And Chemicals, Inc. Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
JPH0696640B2 (ja) * 1992-03-13 1994-11-30 工業技術院長 ビス（シロキシ）芳香環骨格を有する高分子ケイ素化合物の製造方法
JP2903985B2 (ja) * 1993-12-21 1999-06-14 信越化学工業株式会社 ２，５−反応性置換基含有シロールの製造方法及び２，５−反応性置換基含有シロール
JPH0826043B2 (ja) * 1994-03-11 1996-03-13 工業技術院長 １，４−ジシラシクロヘキサ−２，５−ジエン環を有するケイ素化合物およびその製造方法
TW285753B (de) * 1995-01-04 1996-09-11 Air Prod & Chem
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US7384471B2 (en) 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
JP4363824B2 (ja) * 2002-08-12 2009-11-11 旭化成株式会社 層間絶縁用薄膜
JP2004288979A (ja) * 2003-03-24 2004-10-14 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 絶縁膜の成膜方法
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP4530130B2 (ja) * 2004-01-16 2010-08-25 Ｊｓｒ株式会社 ポリマー膜の形成方法
JP4052306B2 (ja) * 2004-12-27 2008-02-27 チッソ株式会社 シラシクロペンタジエン誘導体
JP5324734B2 (ja) * 2005-01-21 2013-10-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体材料とその製造方法

Also Published As

Publication number Publication date
WO2006136741A1 (fr) 2006-12-28
US7972975B2 (en) 2011-07-05
DE602006018605D1 (de) 2011-01-13
JP2008544533A (ja) 2008-12-04
KR101327640B1 (ko) 2013-11-12
EP1896629B1 (de) 2010-12-01
JP5248316B2 (ja) 2013-07-31
CN101203626A (zh) 2008-06-18
EP1896629A1 (de) 2008-03-12
US20110275507A1 (en) 2011-11-10
US20100130025A1 (en) 2010-05-27
KR20080018959A (ko) 2008-02-28
FR2887252A1 (fr) 2006-12-22

Similar Documents

Publication Publication Date Title
DE602006018605D1 (de) Verfahren zur erzeugung einer dielektrischen folie und neuartige vorläufer zur implementierung eines solchen verfahrens
ATE483249T1 (de) Nitridhalbleiter-bauelement und verfahren zu seiner herstellung
DE602005022657D1 (de) III-V Nitrid Halbleiteranordnung und Verfahren zur Herstellung
TW200619287A (en) Composition and method
JP2005528234A5 (de)
ATE491227T1 (de) Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten
DE602006021566D1 (de) Verfahren und substrat zur herstellung zusammengesetzter materialteile durch infiltration und verdic
DE602006006370D1 (de) Verfahren zur Oberflächenbehandlung von III-V-Halbleitersubstraten und Verfahren zur Herstellung von III-V-Verbindungshalbleitern
EP1666632A3 (de) Verbindungen mit niedriger Dielektrizitätskonstante, Verfahren zu deren Herstellung und Verwendung desselben
DE602005021306D1 (de) Germanium-Vorstufe und Verfahren zur Herstellung dünner GST Schicht
EP1981093A4 (de) Lichtemittierendes halbleiterelement, gruppe-iii-nitrid-halbleitersubstrat und verfahren zur herstellung eines solchen gruppe-iii-nitrid-halbleitersubstrats
EP2080823A4 (de) Gruppe-iii-element-nitrid-substrat, substrat mit epitaktischer schicht, herstellungsverfahren dafür und verfahren zur herstellung eines halbleiterelements
ATE476676T1 (de) Hochpräziser spiegel und verfahren zu seiner herstellung
DE60331928D1 (de) Verfahren zur herstellung eines isolierten feldeffekt-transistors in einem epi-losen substrat
DE602005000732D1 (de) Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts
DE602005026738D1 (de) Poröse filmbildende Zusammensetzung, Verfahren zur Herstellung dieser Zusammensetzung, poröser Film und Halbleiterbauelement
DE602006010775D1 (de) Verfahren zur Herstellung von Siliziumscheiben
WO2008081723A1 (ja) 絶縁膜の形成方法および半導体装置の製造方法
DE60321734D1 (de) Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens
EP4398285A4 (de) Haftzusammensetzung, mehrschichtkörper und verfahren zur herstellung eines verarbeiteten halbleitersubstrats
CN113439325B (zh) 清洗剂组合物以及清洗方法
JP2011509314A5 (de)
DE102004035617B8 (de) Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge
DE602006011362D1 (de) Verfahren zur herstellung eines (110) silizium-wafers
ATE325798T1 (de) Verfahren zur herstellung von (mercaptoorganyl)- alkoxysilanen

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties