DE602005021306D1 - Germanium-Vorstufe und Verfahren zur Herstellung dünner GST Schicht - Google Patents
Germanium-Vorstufe und Verfahren zur Herstellung dünner GST SchichtInfo
- Publication number
- DE602005021306D1 DE602005021306D1 DE602005021306T DE602005021306T DE602005021306D1 DE 602005021306 D1 DE602005021306 D1 DE 602005021306D1 DE 602005021306 T DE602005021306 T DE 602005021306T DE 602005021306 T DE602005021306 T DE 602005021306T DE 602005021306 D1 DE602005021306 D1 DE 602005021306D1
- Authority
- DE
- Germany
- Prior art keywords
- making thin
- germanium precursor
- gst layer
- gst
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/30—Germanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040112906A KR100618879B1 (ko) | 2004-12-27 | 2004-12-27 | 게르마늄 전구체, 이를 이용하여 형성된 gst 박막,상기 박막의 제조 방법 및 상변화 메모리 소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005021306D1 true DE602005021306D1 (de) | 2010-07-01 |
Family
ID=35789299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005021306T Active DE602005021306D1 (de) | 2004-12-27 | 2005-10-18 | Germanium-Vorstufe und Verfahren zur Herstellung dünner GST Schicht |
Country Status (4)
Country | Link |
---|---|
US (1) | US7518007B2 (de) |
EP (1) | EP1675194B1 (de) |
KR (1) | KR100618879B1 (de) |
DE (1) | DE602005021306D1 (de) |
Families Citing this family (70)
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KR100657944B1 (ko) * | 2005-01-12 | 2006-12-14 | 삼성전자주식회사 | 상전이 램 동작 방법 |
KR100688532B1 (ko) * | 2005-02-14 | 2007-03-02 | 삼성전자주식회사 | 텔루르 전구체, 이를 이용하여 제조된 Te-함유 칼코게나이드(chalcogenide) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자 |
DE102006038885B4 (de) | 2005-08-24 | 2013-10-10 | Wonik Ips Co., Ltd. | Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht |
KR100704124B1 (ko) * | 2005-08-24 | 2007-04-06 | 주식회사 아이피에스 | Ge-Sb-Te 박막증착방법 |
KR100666876B1 (ko) * | 2005-09-26 | 2007-01-10 | 주식회사 아이피에스 | Ge-Sb-Te 박막증착방법 |
TWI421366B (zh) | 2006-03-10 | 2014-01-01 | Advanced Tech Materials | 鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物 |
CN101473382A (zh) | 2006-05-12 | 2009-07-01 | 高级技术材料公司 | 相变化记忆体材料的低温沉积 |
KR100807223B1 (ko) * | 2006-07-12 | 2008-02-28 | 삼성전자주식회사 | 상변화 물질층, 상변화 물질층 형성 방법 및 이를 이용한상변화 메모리 장치의 제조 방법 |
KR100757415B1 (ko) | 2006-07-13 | 2007-09-10 | 삼성전자주식회사 | 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법 |
KR100780865B1 (ko) * | 2006-07-19 | 2007-11-30 | 삼성전자주식회사 | 상변화막을 포함하는 반도체 소자의 형성 방법 |
JP2008053494A (ja) * | 2006-08-25 | 2008-03-06 | Elpida Memory Inc | 半導体装置及びその製造方法 |
CN101495672B (zh) | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
KR100871692B1 (ko) | 2006-11-07 | 2008-12-08 | 삼성전자주식회사 | 저온 증착용 금속 전구체, 그를 사용한 금속 박막 형성방법 및 상변화 메모리 소자 제조 방법 |
KR101275799B1 (ko) * | 2006-11-21 | 2013-06-18 | 삼성전자주식회사 | 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법 |
KR20080055508A (ko) * | 2006-12-15 | 2008-06-19 | 삼성전자주식회사 | 한 층에서 다른 결정 격자 구조를 갖는 상변화층 및 그형성 방법과 Ti 확산 방지 수단을 구비하는 상변화메모리 소자 및 그 제조 방법 |
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KR100421219B1 (ko) | 2001-06-14 | 2004-03-02 | 삼성전자주식회사 | β-디케톤 리간드를 갖는 유기 금속 착물을 이용한 원자층증착방법 |
KR100468847B1 (ko) | 2002-04-02 | 2005-01-29 | 삼성전자주식회사 | 알콜을 이용한 금속산화물 박막의 화학기상증착법 |
KR100442414B1 (ko) | 2002-04-25 | 2004-07-30 | 학교법인 포항공과대학교 | 유기금속 착체 및 이를 이용한 금속 실리케이트 박막의증착방법 |
US7033560B2 (en) | 2002-08-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Single source mixtures of metal siloxides |
KR20040038023A (ko) | 2002-10-31 | 2004-05-08 | 아사히 덴카 고교 가부시키가이샤 | 화학 기상 성장용 원료 및 이것을 사용한 박막의 제조방법 |
US7115927B2 (en) * | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
KR100979710B1 (ko) | 2003-05-23 | 2010-09-02 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조방법 |
-
2004
- 2004-12-27 KR KR1020040112906A patent/KR100618879B1/ko active IP Right Grant
-
2005
- 2005-10-18 EP EP05256447A patent/EP1675194B1/de active Active
- 2005-10-18 DE DE602005021306T patent/DE602005021306D1/de active Active
- 2005-10-20 US US11/253,693 patent/US7518007B2/en active Active
Also Published As
Publication number | Publication date |
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EP1675194A3 (de) | 2006-10-25 |
EP1675194B1 (de) | 2010-05-19 |
KR20060074236A (ko) | 2006-07-03 |
US7518007B2 (en) | 2009-04-14 |
US20060138393A1 (en) | 2006-06-29 |
EP1675194A2 (de) | 2006-06-28 |
KR100618879B1 (ko) | 2006-09-01 |
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