ATE467900T1 - Verfahren und vorrichtung zur herstellung eines montageverbunds aus mindestens zwei elektronischen mikrochips - Google Patents

Verfahren und vorrichtung zur herstellung eines montageverbunds aus mindestens zwei elektronischen mikrochips

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Publication number
ATE467900T1
ATE467900T1 AT09354009T AT09354009T ATE467900T1 AT E467900 T1 ATE467900 T1 AT E467900T1 AT 09354009 T AT09354009 T AT 09354009T AT 09354009 T AT09354009 T AT 09354009T AT E467900 T1 ATE467900 T1 AT E467900T1
Authority
AT
Austria
Prior art keywords
chips
producing
groove
flexible film
assembly composite
Prior art date
Application number
AT09354009T
Other languages
English (en)
Inventor
Jean Brun
Benoit Lepine
Bruno Mourey
Dominique Vicard
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE467900T1 publication Critical patent/ATE467900T1/de

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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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AT09354009T 2008-03-06 2009-02-20 Verfahren und vorrichtung zur herstellung eines montageverbunds aus mindestens zwei elektronischen mikrochips ATE467900T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0801234A FR2928491A1 (fr) 2008-03-06 2008-03-06 Procede et dispositif de fabrication d'un assemblage d'au moins deux puces microelectroniques

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Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2928491A1 (fr) * 2008-03-06 2009-09-11 Commissariat Energie Atomique Procede et dispositif de fabrication d'un assemblage d'au moins deux puces microelectroniques
FR2937464B1 (fr) 2008-10-21 2011-02-25 Commissariat Energie Atomique Assemblage d'une puce microelectronique a rainure avec un element filaire sous forme de toron et procede d'assemblage
FR2954588B1 (fr) * 2009-12-23 2014-07-25 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un element filaire, puce electronique a element de liaison deformable, procede de fabrication d'une pluralite de puces, et assemblage d'au moins une puce avec un element filaire
FR2955972B1 (fr) * 2010-02-03 2012-03-09 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un tissu incluant un dispositif a puce
FR2960339B1 (fr) 2010-05-18 2012-05-18 Commissariat Energie Atomique Procede de realisation d'elements a puce munis de rainures d'insertion de fils
EP2390194B1 (de) * 2010-05-25 2019-12-25 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Vorrichtung zum Verbinden von Chipgeräten mit Drähten
FR2961947B1 (fr) 2010-06-24 2013-03-15 Commissariat Energie Atomique Incorporation d'elements a puce dans un fil guipe
FR2961949B1 (fr) 2010-06-24 2012-08-03 Commissariat Energie Atomique Elements a puce assembles sur des fils presentant une amorce de rupture
FR2964786B1 (fr) * 2010-09-09 2013-03-15 Commissariat Energie Atomique Procédé de réalisation d'éléments a puce munis de rainures d'insertion de fils
FR2995721B1 (fr) 2012-09-17 2014-11-21 Commissariat Energie Atomique Capot pour dispositif a rainure et a puce, dispositif equipe du capot, assemblage du dispositif avec un element filaire et procede de fabrication
FR3013147B1 (fr) * 2013-11-08 2017-05-12 Commissariat Energie Atomique Procede de fabrication d'un organe electriquement conducteur pour composant electronique presentant une extremite munie d'une cavite
US9560737B2 (en) 2015-03-04 2017-01-31 International Business Machines Corporation Electronic package with heat transfer element(s)
US10426037B2 (en) 2015-07-15 2019-09-24 International Business Machines Corporation Circuitized structure with 3-dimensional configuration
US9894749B2 (en) 2015-09-25 2018-02-13 International Business Machines Corporation Tamper-respondent assemblies with bond protection
US10098235B2 (en) 2015-09-25 2018-10-09 International Business Machines Corporation Tamper-respondent assemblies with region(s) of increased susceptibility to damage
US9911012B2 (en) 2015-09-25 2018-03-06 International Business Machines Corporation Overlapping, discrete tamper-respondent sensors
US10175064B2 (en) 2015-09-25 2019-01-08 International Business Machines Corporation Circuit boards and electronic packages with embedded tamper-respondent sensor
US9578764B1 (en) 2015-09-25 2017-02-21 International Business Machines Corporation Enclosure with inner tamper-respondent sensor(s) and physical security element(s)
US9591776B1 (en) 2015-09-25 2017-03-07 International Business Machines Corporation Enclosure with inner tamper-respondent sensor(s)
US10172239B2 (en) 2015-09-25 2019-01-01 International Business Machines Corporation Tamper-respondent sensors with formed flexible layer(s)
US9924591B2 (en) 2015-09-25 2018-03-20 International Business Machines Corporation Tamper-respondent assemblies
US10143090B2 (en) 2015-10-19 2018-11-27 International Business Machines Corporation Circuit layouts of tamper-respondent sensors
US9978231B2 (en) 2015-10-21 2018-05-22 International Business Machines Corporation Tamper-respondent assembly with protective wrap(s) over tamper-respondent sensor(s)
US9913389B2 (en) 2015-12-01 2018-03-06 International Business Corporation Corporation Tamper-respondent assembly with vent structure
US10327343B2 (en) 2015-12-09 2019-06-18 International Business Machines Corporation Applying pressure to adhesive using CTE mismatch between components
US9555606B1 (en) 2015-12-09 2017-01-31 International Business Machines Corporation Applying pressure to adhesive using CTE mismatch between components
US9554477B1 (en) 2015-12-18 2017-01-24 International Business Machines Corporation Tamper-respondent assemblies with enclosure-to-board protection
US9916744B2 (en) 2016-02-25 2018-03-13 International Business Machines Corporation Multi-layer stack with embedded tamper-detect protection
US9904811B2 (en) 2016-04-27 2018-02-27 International Business Machines Corporation Tamper-proof electronic packages with two-phase dielectric fluid
US9913370B2 (en) 2016-05-13 2018-03-06 International Business Machines Corporation Tamper-proof electronic packages formed with stressed glass
US9881880B2 (en) 2016-05-13 2018-01-30 International Business Machines Corporation Tamper-proof electronic packages with stressed glass component substrate(s)
US9858776B1 (en) 2016-06-28 2018-01-02 International Business Machines Corporation Tamper-respondent assembly with nonlinearity monitoring
FR3053527B1 (fr) 2016-06-29 2018-08-10 Safran Electronics & Defense Procede de marquage inviolable et tracable d'un assemblage de deux elements
US10321589B2 (en) 2016-09-19 2019-06-11 International Business Machines Corporation Tamper-respondent assembly with sensor connection adapter
US10271424B2 (en) 2016-09-26 2019-04-23 International Business Machines Corporation Tamper-respondent assemblies with in situ vent structure(s)
US10299372B2 (en) 2016-09-26 2019-05-21 International Business Machines Corporation Vented tamper-respondent assemblies
US9999124B2 (en) 2016-11-02 2018-06-12 International Business Machines Corporation Tamper-respondent assemblies with trace regions of increased susceptibility to breaking
FR3058579B1 (fr) * 2016-11-07 2018-11-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'emission reception radiofrequence
FR3062237B1 (fr) 2017-01-23 2020-05-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d’une puce a circuit integre et puce a circuit integre.
FR3062515B1 (fr) * 2017-01-30 2019-11-01 Primo1D Procede d'insertion d'un fil dans une rainure d'une puce de semi-conducteur, et equipement pour la mise en œuvre d’un tel procede.
US10327329B2 (en) 2017-02-13 2019-06-18 International Business Machines Corporation Tamper-respondent assembly with flexible tamper-detect sensor(s) overlying in-situ-formed tamper-detect sensor
FR3065579B1 (fr) 2017-04-19 2019-05-03 Primo1D Dispositif d'emission reception radiofrequence
FR3065578B1 (fr) * 2017-04-19 2019-05-03 Primo1D Procede d'assemblage d'une puce microelectronique sur un element filaire
FR3069962B1 (fr) 2017-08-01 2020-09-25 Primo1D Antenne a plaque pour coupler un terminal d’emission-reception a un dispositif rfid
FR3076071B1 (fr) * 2017-12-21 2019-11-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’une puce a circuit integre et puce a circuit integre
US10306753B1 (en) 2018-02-22 2019-05-28 International Business Machines Corporation Enclosure-to-board interface with tamper-detect circuit(s)
FR3078980B1 (fr) 2018-03-14 2021-06-11 Primo1D Fil guipe compose d’une ame principale et d’au moins un fils de couverture et comprenant au moins un element filaire conducteur relie electriquement a au moins une puce electronique
US11122682B2 (en) 2018-04-04 2021-09-14 International Business Machines Corporation Tamper-respondent sensors with liquid crystal polymer layers
FR3083643B1 (fr) 2018-07-04 2023-01-13 Commissariat Energie Atomique Procede de realisation d'un dispositif electronique
CN112098768B (zh) * 2019-05-30 2022-04-29 上海新微技术研发中心有限公司 硅光芯片的测试方法及设备
FR3103630B1 (fr) 2019-11-22 2022-06-03 Primo1D Puce fonctionnelle adaptee pour etre assemblee a des elements filaires, et procede de fabrication d’une telle puce

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283939A (ja) * 1988-05-11 1989-11-15 Hitachi Ltd 半導体チップおよび基板並びにこれらによって構成される電子装置
US5591941A (en) * 1993-10-28 1997-01-07 International Business Machines Corporation Solder ball interconnected assembly
CA2156795C (en) * 1994-08-31 1999-08-17 Yuzo Shimada An electronic device assembly and a manufacturing method of the same
US5903059A (en) * 1995-11-21 1999-05-11 International Business Machines Corporation Microconnectors
JPH10214919A (ja) * 1997-01-29 1998-08-11 New Japan Radio Co Ltd マルチチップモジュールの製造方法
DE19737978C2 (de) * 1997-08-30 1999-09-16 Bayer Ag Elektrochromer Spiegel
US6214716B1 (en) * 1998-09-30 2001-04-10 Micron Technology, Inc. Semiconductor substrate-based BGA interconnection and methods of farication same
US6351028B1 (en) * 1999-02-08 2002-02-26 Micron Technology, Inc. Multiple die stack apparatus employing T-shaped interposer elements
DE19907168C1 (de) * 1999-02-19 2000-08-10 Micronas Intermetall Gmbh Schichtanordnung sowie Verfahren zu deren Herstellung
US6285081B1 (en) * 1999-07-13 2001-09-04 Micron Technology, Inc. Deflectable interconnect
JP2002176069A (ja) * 2000-12-06 2002-06-21 Nec Corp 電気的接続端子の構造とその製造方法
GB0108950D0 (en) 2001-04-10 2001-05-30 Leonard Philip N Personal computer systems
US7332819B2 (en) * 2002-01-09 2008-02-19 Micron Technology, Inc. Stacked die in die BGA package
JP3507059B2 (ja) * 2002-06-27 2004-03-15 沖電気工業株式会社 積層マルチチップパッケージ
JP3753984B2 (ja) * 2002-01-09 2006-03-08 シャープ株式会社 非接触通信機器用モジュール及びその製造方法
US6930032B2 (en) * 2002-05-14 2005-08-16 Freescale Semiconductor, Inc. Under bump metallurgy structural design for high reliability bumped packages
JP2004265888A (ja) * 2003-01-16 2004-09-24 Sony Corp 半導体装置及びその製造方法
JP4979376B2 (ja) * 2003-05-06 2012-07-18 ジェンテックス コーポレイション 車両用バックミラー要素及びこれらの要素を組み込むアセンブリ
JP3994924B2 (ja) * 2003-06-02 2007-10-24 セイコーエプソン株式会社 回路基板の製造方法
JP3994923B2 (ja) * 2003-06-02 2007-10-24 セイコーエプソン株式会社 半導体装置の製造方法
US20050104225A1 (en) * 2003-11-19 2005-05-19 Yuan-Chang Huang Conductive bumps with insulating sidewalls and method for fabricating
US7716823B2 (en) * 2004-04-08 2010-05-18 Hewlett-Packard Development Company, L.P. Bonding an interconnect to a circuit device and related devices
US6932136B1 (en) * 2004-04-08 2005-08-23 National Semiconductor Corporation Post singulation die separation apparatus and method for bulk feeding operation
JP4522960B2 (ja) * 2005-03-17 2010-08-11 エルジー イノテック カンパニー リミテッド 半導体製造用接着テープの製造装置及びその製造方法
FR2905518B1 (fr) * 2006-08-29 2008-12-26 Commissariat Energie Atomique Puce microelectronique a faces laterales munies de rainures et procede de fabrication
FR2928491A1 (fr) * 2008-03-06 2009-09-11 Commissariat Energie Atomique Procede et dispositif de fabrication d'un assemblage d'au moins deux puces microelectroniques
FR2937464B1 (fr) * 2008-10-21 2011-02-25 Commissariat Energie Atomique Assemblage d'une puce microelectronique a rainure avec un element filaire sous forme de toron et procede d'assemblage
FR2960339B1 (fr) * 2010-05-18 2012-05-18 Commissariat Energie Atomique Procede de realisation d'elements a puce munis de rainures d'insertion de fils
FR2964786B1 (fr) * 2010-09-09 2013-03-15 Commissariat Energie Atomique Procédé de réalisation d'éléments a puce munis de rainures d'insertion de fils

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CN101527269B (zh) 2012-07-25
US20110001237A1 (en) 2011-01-06
US8012795B2 (en) 2011-09-06
US8723312B2 (en) 2014-05-13
EP2250667A1 (de) 2010-11-17
JP5341114B2 (ja) 2013-11-13
JP5378011B2 (ja) 2013-12-25
EP2250667B1 (de) 2013-04-24
EP2099060B1 (de) 2010-05-12
WO2009112644A1 (fr) 2009-09-17
EP2099060A1 (de) 2009-09-09
US20090227069A1 (en) 2009-09-10
FR2928491A1 (fr) 2009-09-11
CN101960585B (zh) 2014-07-16
ES2346274T3 (es) 2010-10-13
DE602009000024D1 (de) 2010-06-24
CN101960585A (zh) 2011-01-26
JP2009218590A (ja) 2009-09-24
CN101527269A (zh) 2009-09-09
JP2011513980A (ja) 2011-04-28

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