ATE411616T1 - Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren - Google Patents
Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahrenInfo
- Publication number
- ATE411616T1 ATE411616T1 AT02743567T AT02743567T ATE411616T1 AT E411616 T1 ATE411616 T1 AT E411616T1 AT 02743567 T AT02743567 T AT 02743567T AT 02743567 T AT02743567 T AT 02743567T AT E411616 T1 ATE411616 T1 AT E411616T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor material
- region
- doping type
- bipolar transistor
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 16
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 14
- 238000005215 recombination Methods 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01203002 | 2001-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE411616T1 true ATE411616T1 (de) | 2008-10-15 |
Family
ID=8180765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02743567T ATE411616T1 (de) | 2001-08-06 | 2002-07-08 | Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6759696B2 (de) |
| EP (1) | EP1417714B1 (de) |
| JP (1) | JP2004538645A (de) |
| KR (1) | KR20040030936A (de) |
| AT (1) | ATE411616T1 (de) |
| DE (1) | DE60229400D1 (de) |
| TW (1) | TW571353B (de) |
| WO (1) | WO2003015175A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE602006019972D1 (de) * | 2005-09-30 | 2011-03-17 | Nxp Bv | Halbleiterbauelement mit einem bipolaren transistor und herstellungsverfahren dafür |
| DE102006011240A1 (de) * | 2006-03-10 | 2007-09-20 | Infineon Technologies Ag | Bipolartransistor und Verfahren zum Herstellen eines Bipolartransistors |
| US7294869B2 (en) * | 2006-04-04 | 2007-11-13 | International Business Machines Corporation | Silicon germanium emitter |
| KR101044309B1 (ko) * | 2008-08-04 | 2011-06-29 | 임강호 | 전도방지형 안전 사다리 |
| KR200457903Y1 (ko) * | 2009-06-09 | 2012-01-12 | 김만섭 | 사다리용 전도방지장치 |
| US9551768B2 (en) | 2013-03-15 | 2017-01-24 | East Carolina University | NMR method for monitoring changes in the core of lipoprotein particles in metabolism and disease |
| US9356097B2 (en) * | 2013-06-25 | 2016-05-31 | Globalfoundries Inc. | Method of forming a bipolar transistor with maskless self-aligned emitter |
| US9105769B2 (en) * | 2013-09-12 | 2015-08-11 | International Business Machines Corporation | Shallow junction photovoltaic devices |
| US10775458B2 (en) | 2018-03-05 | 2020-09-15 | Texas Tech University System | Method and system for non-invasive measurement of metabolic health |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2590236B2 (ja) * | 1987-10-07 | 1997-03-12 | 株式会社日立製作所 | 半導体装置 |
| US5175603A (en) * | 1988-01-30 | 1992-12-29 | Kabushiki Kaisha Toshiba | Bipolar transistor |
| JP2728671B2 (ja) * | 1988-02-03 | 1998-03-18 | 株式会社東芝 | バイポーラトランジスタの製造方法 |
| US5548158A (en) * | 1994-09-02 | 1996-08-20 | National Semiconductor Corporation | Structure of bipolar transistors with improved output current-voltage characteristics |
| DE19609933A1 (de) * | 1996-03-14 | 1997-09-18 | Daimler Benz Ag | Verfahren zur Herstellung eines Heterobipolartransistors |
| EP0834189B1 (de) * | 1996-03-29 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Herstellung einer halbleiteranordnung mit einer epitaxialen halbleiterschicht |
| US6525348B1 (en) * | 2001-07-17 | 2003-02-25 | David C. Scott | Two terminal edge illuminated epilayer waveguide phototransistor |
-
2002
- 2002-07-08 AT AT02743567T patent/ATE411616T1/de not_active IP Right Cessation
- 2002-07-08 JP JP2003520000A patent/JP2004538645A/ja active Pending
- 2002-07-08 DE DE60229400T patent/DE60229400D1/de not_active Expired - Lifetime
- 2002-07-08 WO PCT/IB2002/002822 patent/WO2003015175A1/en active Application Filing
- 2002-07-08 KR KR10-2004-7001811A patent/KR20040030936A/ko not_active Application Discontinuation
- 2002-07-08 EP EP02743567A patent/EP1417714B1/de not_active Expired - Lifetime
- 2002-08-01 US US10/210,499 patent/US6759696B2/en not_active Expired - Lifetime
- 2002-09-13 TW TW091121005A patent/TW571353B/zh not_active IP Right Cessation
-
2003
- 2003-08-27 US US10/648,870 patent/US6908804B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6759696B2 (en) | 2004-07-06 |
| US6908804B2 (en) | 2005-06-21 |
| DE60229400D1 (de) | 2008-11-27 |
| JP2004538645A (ja) | 2004-12-24 |
| US20040046187A1 (en) | 2004-03-11 |
| WO2003015175A1 (en) | 2003-02-20 |
| KR20040030936A (ko) | 2004-04-09 |
| EP1417714B1 (de) | 2008-10-15 |
| US20030054599A1 (en) | 2003-03-20 |
| TW571353B (en) | 2004-01-11 |
| EP1417714A1 (de) | 2004-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |