ATE401665T1 - Verfahren zur selbstausrichtung einer damascenen gatterstruktur zu isolationsgebieten - Google Patents

Verfahren zur selbstausrichtung einer damascenen gatterstruktur zu isolationsgebieten

Info

Publication number
ATE401665T1
ATE401665T1 AT03368080T AT03368080T ATE401665T1 AT E401665 T1 ATE401665 T1 AT E401665T1 AT 03368080 T AT03368080 T AT 03368080T AT 03368080 T AT03368080 T AT 03368080T AT E401665 T1 ATE401665 T1 AT E401665T1
Authority
AT
Austria
Prior art keywords
silicon oxide
shallow trench
regions
gate structures
gate structure
Prior art date
Application number
AT03368080T
Other languages
English (en)
Inventor
Daniel Yen
Ching-Thiam Chung
Wei Hua Cheng
Chester Nieh
Tong Boon Lee
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Application granted granted Critical
Publication of ATE401665T1 publication Critical patent/ATE401665T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
AT03368080T 2002-08-22 2003-08-20 Verfahren zur selbstausrichtung einer damascenen gatterstruktur zu isolationsgebieten ATE401665T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/225,805 US6713335B2 (en) 2002-08-22 2002-08-22 Method of self-aligning a damascene gate structure to isolation regions

Publications (1)

Publication Number Publication Date
ATE401665T1 true ATE401665T1 (de) 2008-08-15

Family

ID=31187999

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03368080T ATE401665T1 (de) 2002-08-22 2003-08-20 Verfahren zur selbstausrichtung einer damascenen gatterstruktur zu isolationsgebieten

Country Status (7)

Country Link
US (1) US6713335B2 (de)
EP (1) EP1391925B1 (de)
JP (1) JP2004134757A (de)
AT (1) ATE401665T1 (de)
DE (1) DE60322154D1 (de)
SG (1) SG102720A1 (de)
TW (1) TWI260732B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200425298A (en) * 2003-05-01 2004-11-16 Nanya Technology Corp Fabrication method for a damascene bitline contact
US20050196946A1 (en) * 2004-03-02 2005-09-08 Matsushita Electric Industrial Co., Ltd. Method for manufacturing solid-state imaging device
JP4577680B2 (ja) * 2004-04-13 2010-11-10 エルピーダメモリ株式会社 半導体装置の製造方法
JP4054321B2 (ja) * 2004-06-23 2008-02-27 松下電器産業株式会社 半導体装置
US7118952B2 (en) * 2004-07-14 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making transistor with strained source/drain
US7148548B2 (en) * 2004-07-20 2006-12-12 Intel Corporation Semiconductor device with a high-k gate dielectric and a metal gate electrode
US7138323B2 (en) * 2004-07-28 2006-11-21 Intel Corporation Planarizing a semiconductor structure to form replacement metal gates
KR100641993B1 (ko) * 2004-12-15 2006-11-02 동부일렉트로닉스 주식회사 고유전율의 절연막을 갖는 씨모스 이미지 센서의 제조 방법
CA2645817C (en) * 2006-03-15 2016-05-03 Google Inc. Automatic display of resized images
TWI336918B (en) * 2007-05-08 2011-02-01 Nanya Technology Corp Method of manufacturing the shallow trench isolation structure
US7998832B2 (en) 2008-08-27 2011-08-16 Advanced Micro Devices, Inc. Semiconductor device with isolation trench liner, and related fabrication methods
US8735991B2 (en) * 2011-12-01 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. High gate density devices and methods
US9865690B2 (en) * 2012-04-10 2018-01-09 Qorvo Us, Inc. Methods for fabricating a metal structure for a semiconductor device
US9165838B2 (en) * 2014-02-26 2015-10-20 Taiwan Semiconductor Manufacturing Company Limited Methods of forming low resistance contacts
US9530853B2 (en) 2014-03-10 2016-12-27 Qorvo Us, Inc. Semiconductor device with reduced leakage current and method for making the same
DE102014107994A1 (de) * 2014-06-05 2015-12-17 Infineon Technologies Austria Ag Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
US9666586B2 (en) * 2014-08-14 2017-05-30 Gil Asa CMOS compatible memory cells
US9378968B2 (en) * 2014-09-02 2016-06-28 United Microelectronics Corporation Method for planarizing semiconductor device
FR3036846B1 (fr) * 2015-05-29 2018-06-15 Stmicroelectronics (Crolles 2) Sas Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant
US10147719B2 (en) * 2016-11-17 2018-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor field effect transistors and manufacturing method thereof
US10784359B2 (en) * 2018-05-18 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Non-conformal oxide liner and manufacturing methods thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1070187A (ja) 1996-08-28 1998-03-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4160167B2 (ja) * 1997-06-30 2008-10-01 株式会社東芝 半導体装置の製造方法
US6261887B1 (en) 1997-08-28 2001-07-17 Texas Instruments Incorporated Transistors with independently formed gate structures and method
US6248643B1 (en) 1999-04-02 2001-06-19 Vanguard International Semiconductor Corporation Method of fabricating a self-aligned contact
US6258677B1 (en) 1999-10-01 2001-07-10 Chartered Seminconductor Manufacturing Ltd. Method of fabricating wedge isolation transistors
JP3538108B2 (ja) * 2000-03-14 2004-06-14 松下電器産業株式会社 半導体装置及びその製造方法
JP2001267561A (ja) * 2000-03-21 2001-09-28 Sony Corp 半導体装置の製造方法及び半導体装置
US6204137B1 (en) * 2000-04-24 2001-03-20 Chartered Semiconductor Manufacturing, Ltd. Method to form transistors and local interconnects using a silicon nitride dummy gate technique

Also Published As

Publication number Publication date
EP1391925A2 (de) 2004-02-25
TW200403803A (en) 2004-03-01
TWI260732B (en) 2006-08-21
SG102720A1 (en) 2004-03-26
EP1391925B1 (de) 2008-07-16
US6713335B2 (en) 2004-03-30
DE60322154D1 (de) 2008-08-28
US20040038466A1 (en) 2004-02-26
EP1391925A3 (de) 2005-04-20
JP2004134757A (ja) 2004-04-30

Similar Documents

Publication Publication Date Title
ATE401665T1 (de) Verfahren zur selbstausrichtung einer damascenen gatterstruktur zu isolationsgebieten
US10211087B2 (en) Semiconductor structure with airgap
US6500728B1 (en) Shallow trench isolation (STI) module to improve contact etch process window
CN1959957B (zh) 使用应变硅用于晶体管的集成设计方法和结构
US6391732B1 (en) Method to form self-aligned, L-shaped sidewall spacers
CN106158628B (zh) 半导体结构及其制作工艺
US8518757B2 (en) Method of fabricating strained semiconductor structures from silicon-on-insulator (SOI)
KR100845103B1 (ko) 반도체소자의 제조방법
US6875680B1 (en) Methods of manufacturing transistors using dummy gate patterns
US20020076877A1 (en) Method to form self-aligned, L-shaped sidewall spacers
CN105336703B (zh) 一种半导体器件的制作方法
US10290728B2 (en) Semiconductor device and manufacturing method thereof
KR100620197B1 (ko) 반도체 소자의 모스형 트랜지스터 제조 방법
KR100948298B1 (ko) 반도체 소자 및 그의 제조 방법
KR100333374B1 (ko) 더블 게이트를 갖는 에스오아이 소자의 제조방법
CN103730498B (zh) 半导体器件及其制造方法
CN103378151B (zh) 一种降低负载效应的硅锗结构及其形成方法
KR100641496B1 (ko) 트랜지스터 제조 방법
JP2017151349A (ja) 半導体装置の製造方法
KR100714901B1 (ko) 콘택 구조체의 형성방법들
KR101084634B1 (ko) 반도체 소자의 소자 분리막 형성 방법
KR100508868B1 (ko) 반도체 장치의 소자 분리 방법
TW465021B (en) Manufacturing method for shallow trench isolation (STI) on a semiconductor chip
KR101006510B1 (ko) 반도체소자의 소자분리막 형성방법
KR100290912B1 (ko) 반도체소자의 격리막 형성방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties