US7020017B2
(en)
*
|
2004-04-06 |
2006-03-28 |
Sandisk Corporation |
Variable programming of non-volatile memory
|
US6963508B1
(en)
*
|
2004-04-22 |
2005-11-08 |
Fuja Shone |
Operation method for non-volatile memory
|
US7023733B2
(en)
*
|
2004-05-05 |
2006-04-04 |
Sandisk Corporation |
Boosting to control programming of non-volatile memory
|
US7242620B2
(en)
*
|
2004-10-05 |
2007-07-10 |
Kabushiki Kaisha Toshiba |
Nonvolatile semiconductor memory device and an operation method thereof
|
US7187585B2
(en)
*
|
2005-04-05 |
2007-03-06 |
Sandisk Corporation |
Read operation for non-volatile storage that includes compensation for coupling
|
US7196946B2
(en)
*
|
2005-04-05 |
2007-03-27 |
Sandisk Corporation |
Compensating for coupling in non-volatile storage
|
US7196928B2
(en)
*
|
2005-04-05 |
2007-03-27 |
Sandisk Corporation |
Compensating for coupling during read operations of non-volatile memory
|
US7339834B2
(en)
*
|
2005-06-03 |
2008-03-04 |
Sandisk Corporation |
Starting program voltage shift with cycling of non-volatile memory
|
EP1891644B1
(de)
*
|
2005-06-15 |
2009-02-11 |
Micron Technology, Inc. |
Selektive, langsam programmierbare konvergenz in einer flash-speichervorrichtung
|
ITRM20050310A1
(it)
*
|
2005-06-15 |
2006-12-16 |
Micron Technology Inc |
Convergenza a programmazione selettiva lenta in un dispositivo di memoria flash.
|
US7656710B1
(en)
|
2005-07-14 |
2010-02-02 |
Sau Ching Wong |
Adaptive operations for nonvolatile memories
|
WO2007016167A1
(en)
*
|
2005-08-01 |
2007-02-08 |
Sandisk Corporation |
Programming non-volatile memory with self-adjusting maximum program loop
|
US7230854B2
(en)
*
|
2005-08-01 |
2007-06-12 |
Sandisk Corporation |
Method for programming non-volatile memory with self-adjusting maximum program loop
|
US7023737B1
(en)
*
|
2005-08-01 |
2006-04-04 |
Sandisk Corporation |
System for programming non-volatile memory with self-adjusting maximum program loop
|
US7170788B1
(en)
|
2005-09-09 |
2007-01-30 |
Sandisk Corporation |
Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb
|
US7218552B1
(en)
|
2005-09-09 |
2007-05-15 |
Sandisk Corporation |
Last-first mode and method for programming of non-volatile memory with reduced program disturb
|
US7180780B1
(en)
*
|
2005-11-17 |
2007-02-20 |
Macronix International Co., Ltd. |
Multi-level-cell programming methods of non-volatile memories
|
JP4808784B2
(ja)
*
|
2005-12-19 |
2011-11-02 |
サンディスク コーポレイション |
改善されたパス電圧を用いてプログラム阻害を低減した不揮発性記憶メモリのプログラミング方法
|
US7349260B2
(en)
*
|
2005-12-29 |
2008-03-25 |
Sandisk Corporation |
Alternate row-based reading and writing for non-volatile memory
|
US7443726B2
(en)
*
|
2005-12-29 |
2008-10-28 |
Sandisk Corporation |
Systems for alternate row-based reading and writing for non-volatile memory
|
US7352629B2
(en)
*
|
2005-12-29 |
2008-04-01 |
Sandisk Corporation |
Systems for continued verification in non-volatile memory write operations
|
US7307887B2
(en)
*
|
2005-12-29 |
2007-12-11 |
Sandisk Corporation |
Continued verification in non-volatile memory write operations
|
DE602006020494D1
(de)
*
|
2005-12-29 |
2011-04-14 |
Sandisk Corp |
Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher
|
US7436733B2
(en)
*
|
2006-03-03 |
2008-10-14 |
Sandisk Corporation |
System for performing read operation on non-volatile storage with compensation for coupling
|
US7499319B2
(en)
|
2006-03-03 |
2009-03-03 |
Sandisk Corporation |
Read operation for non-volatile storage with compensation for coupling
|
US7499326B2
(en)
*
|
2006-04-12 |
2009-03-03 |
Sandisk Corporation |
Apparatus for reducing the impact of program disturb
|
US7436713B2
(en)
|
2006-04-12 |
2008-10-14 |
Sandisk Corporation |
Reducing the impact of program disturb
|
US7515463B2
(en)
|
2006-04-12 |
2009-04-07 |
Sandisk Corporation |
Reducing the impact of program disturb during read
|
US7426137B2
(en)
|
2006-04-12 |
2008-09-16 |
Sandisk Corporation |
Apparatus for reducing the impact of program disturb during read
|
US7440322B2
(en)
*
|
2006-04-20 |
2008-10-21 |
Sandisk Corporation |
Method and system for flash memory devices
|
US20070266296A1
(en)
*
|
2006-05-15 |
2007-11-15 |
Conley Kevin M |
Nonvolatile Memory with Convolutional Coding
|
US7840875B2
(en)
*
|
2006-05-15 |
2010-11-23 |
Sandisk Corporation |
Convolutional coding methods for nonvolatile memory
|
US7440331B2
(en)
*
|
2006-06-01 |
2008-10-21 |
Sandisk Corporation |
Verify operation for non-volatile storage using different voltages
|
US7457163B2
(en)
*
|
2006-06-01 |
2008-11-25 |
Sandisk Corporation |
System for verifying non-volatile storage using different voltages
|
US7870736B2
(en)
*
|
2006-06-01 |
2011-01-18 |
Virginia Tech Intellectual Properties, Inc. |
Premixing injector for gas turbine engines
|
US7310272B1
(en)
*
|
2006-06-02 |
2007-12-18 |
Sandisk Corporation |
System for performing data pattern sensitivity compensation using different voltage
|
US7450421B2
(en)
*
|
2006-06-02 |
2008-11-11 |
Sandisk Corporation |
Data pattern sensitivity compensation using different voltage
|
EP1865513A1
(de)
*
|
2006-06-07 |
2007-12-12 |
STMicroelectronics S.r.l. |
Nichtflüchtige Speichervorrichtung
|
US7606084B2
(en)
*
|
2006-06-19 |
2009-10-20 |
Sandisk Corporation |
Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
|
US7352628B2
(en)
*
|
2006-06-19 |
2008-04-01 |
Sandisk Corporation |
Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
|
KR101041595B1
(ko)
*
|
2006-06-19 |
2011-06-15 |
샌디스크 코포레이션 |
비휘발성 메모리에서 개선된 판독 동작을 위해 선택 상태에서 보상을 사용하여 감지 및 다른 크기의 마진 프로그래밍
|
DE602006011451D1
(de)
|
2006-06-21 |
2010-02-11 |
Hynix Semiconductor Inc |
Verfahren und Vorrichtung zum elektrischen Programmieren von Halbleiterspeicherzellen
|
US7486561B2
(en)
*
|
2006-06-22 |
2009-02-03 |
Sandisk Corporation |
Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7489549B2
(en)
*
|
2006-06-22 |
2009-02-10 |
Sandisk Corporation |
System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7304893B1
(en)
|
2006-06-30 |
2007-12-04 |
Sandisk Corporation |
Method of partial page fail bit detection in flash memory devices
|
US7355892B2
(en)
*
|
2006-06-30 |
2008-04-08 |
Sandisk Corporation |
Partial page fail bit detection in flash memory devices
|
US7522454B2
(en)
*
|
2006-07-20 |
2009-04-21 |
Sandisk Corporation |
Compensating for coupling based on sensing a neighbor using coupling
|
US7495953B2
(en)
*
|
2006-07-20 |
2009-02-24 |
Sandisk Corporation |
System for configuring compensation
|
WO2008011440A2
(en)
*
|
2006-07-20 |
2008-01-24 |
Sandisk Corporation |
Floating gate memory with compensating for coupling during programming
|
US7885119B2
(en)
|
2006-07-20 |
2011-02-08 |
Sandisk Corporation |
Compensating for coupling during programming
|
US7443729B2
(en)
*
|
2006-07-20 |
2008-10-28 |
Sandisk Corporation |
System that compensates for coupling based on sensing a neighbor using coupling
|
US7400535B2
(en)
*
|
2006-07-20 |
2008-07-15 |
Sandisk Corporation |
System that compensates for coupling during programming
|
US7506113B2
(en)
*
|
2006-07-20 |
2009-03-17 |
Sandisk Corporation |
Method for configuring compensation
|
US7894269B2
(en)
*
|
2006-07-20 |
2011-02-22 |
Sandisk Corporation |
Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
|
US7567461B2
(en)
*
|
2006-08-18 |
2009-07-28 |
Micron Technology, Inc. |
Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
|
JP4997882B2
(ja)
*
|
2006-09-05 |
2012-08-08 |
ソニー株式会社 |
不揮発性半導体記憶装置およびその書き込み方法
|
US7440326B2
(en)
|
2006-09-06 |
2008-10-21 |
Sandisk Corporation |
Programming non-volatile memory with improved boosting
|
US7599223B2
(en)
*
|
2006-09-12 |
2009-10-06 |
Sandisk Corporation |
Non-volatile memory with linear estimation of initial programming voltage
|
US7961511B2
(en)
*
|
2006-09-26 |
2011-06-14 |
Sandisk Corporation |
Hybrid programming methods and systems for non-volatile memory storage elements
|
US20080092015A1
(en)
*
|
2006-09-28 |
2008-04-17 |
Yigal Brandman |
Nonvolatile memory with adaptive operation
|
US7818653B2
(en)
*
|
2006-09-28 |
2010-10-19 |
Sandisk Corporation |
Methods of soft-input soft-output decoding for nonvolatile memory
|
US7805663B2
(en)
*
|
2006-09-28 |
2010-09-28 |
Sandisk Corporation |
Methods of adapting operation of nonvolatile memory
|
US7904783B2
(en)
*
|
2006-09-28 |
2011-03-08 |
Sandisk Corporation |
Soft-input soft-output decoder for nonvolatile memory
|
US7684247B2
(en)
*
|
2006-09-29 |
2010-03-23 |
Sandisk Corporation |
Reverse reading in non-volatile memory with compensation for coupling
|
US7447076B2
(en)
*
|
2006-09-29 |
2008-11-04 |
Sandisk Corporation |
Systems for reverse reading in non-volatile memory with compensation for coupling
|
JP2010508615A
(ja)
*
|
2006-10-30 |
2010-03-18 |
サンディスク コーポレイション |
不揮発性メモリに用いられる最高マルチレベル状態の高速プログラミング
|
US7596031B2
(en)
|
2006-10-30 |
2009-09-29 |
Sandisk Corporation |
Faster programming of highest multi-level state for non-volatile memory
|
US7426139B2
(en)
*
|
2006-11-02 |
2008-09-16 |
Macronix International Co., Ltd. |
Dynamic program and read adjustment for multi-level cell memory array
|
US7904788B2
(en)
*
|
2006-11-03 |
2011-03-08 |
Sandisk Corporation |
Methods of varying read threshold voltage in nonvolatile memory
|
US8001441B2
(en)
*
|
2006-11-03 |
2011-08-16 |
Sandisk Technologies Inc. |
Nonvolatile memory with modulated error correction coding
|
US7558109B2
(en)
*
|
2006-11-03 |
2009-07-07 |
Sandisk Corporation |
Nonvolatile memory with variable read threshold
|
US7904780B2
(en)
*
|
2006-11-03 |
2011-03-08 |
Sandisk Corporation |
Methods of modulating error correction coding
|
US7551482B2
(en)
*
|
2006-12-27 |
2009-06-23 |
Sandisk Corporation |
Method for programming with initial programming voltage based on trial
|
US7570520B2
(en)
*
|
2006-12-27 |
2009-08-04 |
Sandisk Corporation |
Non-volatile storage system with initial programming voltage based on trial
|
US7616505B2
(en)
*
|
2006-12-28 |
2009-11-10 |
Sandisk Corporation |
Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
|
US7616506B2
(en)
*
|
2006-12-28 |
2009-11-10 |
Sandisk Corporation |
Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
|
US7495962B2
(en)
*
|
2006-12-29 |
2009-02-24 |
Sandisk Corporation |
Alternating read mode
|
US7590002B2
(en)
*
|
2006-12-29 |
2009-09-15 |
Sandisk Corporation |
Resistance sensing and compensation for non-volatile storage
|
US7616498B2
(en)
*
|
2006-12-29 |
2009-11-10 |
Sandisk Corporation |
Non-volatile storage system with resistance sensing and compensation
|
US7440324B2
(en)
*
|
2006-12-29 |
2008-10-21 |
Sandisk Corporation |
Apparatus with alternating read mode
|
US7590007B2
(en)
*
|
2007-01-11 |
2009-09-15 |
Kabushiki Kaisha Toshiba |
Nonvolatile semiconductor memory device
|
KR100816161B1
(ko)
*
|
2007-01-23 |
2008-03-21 |
주식회사 하이닉스반도체 |
플래시 메모리 소자의 프로그램 방법
|
US7679965B2
(en)
*
|
2007-01-31 |
2010-03-16 |
Sandisk Il Ltd |
Flash memory with improved programming precision
|
WO2008103586A1
(en)
|
2007-02-20 |
2008-08-28 |
Sandisk Corporation |
Dynamic verify based on threshold voltage distribution
|
US7535764B2
(en)
*
|
2007-03-21 |
2009-05-19 |
Sandisk Corporation |
Adjusting resistance of non-volatile memory using dummy memory cells
|
ITRM20070167A1
(it)
*
|
2007-03-27 |
2008-09-29 |
Micron Technology Inc |
Non-volatile multilevel memory cell programming
|
US7729165B2
(en)
*
|
2007-03-29 |
2010-06-01 |
Flashsilicon, Incorporation |
Self-adaptive and self-calibrated multiple-level non-volatile memories
|
KR100927119B1
(ko)
*
|
2007-05-10 |
2009-11-18 |
삼성전자주식회사 |
불 휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
|
KR100888823B1
(ko)
*
|
2007-06-27 |
2009-03-17 |
삼성전자주식회사 |
비휘발성 메모리 시스템, 및 비휘발성 메모리 시스템의프로그램 방법
|
US7599224B2
(en)
*
|
2007-07-03 |
2009-10-06 |
Sandisk Corporation |
Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
US7508715B2
(en)
*
|
2007-07-03 |
2009-03-24 |
Sandisk Corporation |
Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
US7869273B2
(en)
|
2007-09-04 |
2011-01-11 |
Sandisk Corporation |
Reducing the impact of interference during programming
|
US7652929B2
(en)
*
|
2007-09-17 |
2010-01-26 |
Sandisk Corporation |
Non-volatile memory and method for biasing adjacent word line for verify during programming
|
JP4560073B2
(ja)
*
|
2007-09-18 |
2010-10-13 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US7746704B1
(en)
*
|
2007-09-21 |
2010-06-29 |
Marvell International Ltd. |
Program-and-erase method for multilevel nonvolatile memory
|
US7978520B2
(en)
|
2007-09-27 |
2011-07-12 |
Sandisk Corporation |
Compensation of non-volatile memory chip non-idealities by program pulse adjustment
|
JP4640658B2
(ja)
*
|
2008-02-15 |
2011-03-02 |
マイクロン テクノロジー, インク. |
マルチレベル抑制スキーム
|
ITRM20080114A1
(it)
*
|
2008-02-29 |
2009-09-01 |
Micron Technology Inc |
Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria.
|
KR101412974B1
(ko)
|
2008-05-28 |
2014-06-30 |
삼성전자주식회사 |
메모리 장치 및 메모리 프로그래밍 방법
|
US7813172B2
(en)
|
2008-06-12 |
2010-10-12 |
Sandisk Corporation |
Nonvolatile memory with correlated multiple pass programming
|
EP2289069B1
(de)
*
|
2008-06-12 |
2016-12-28 |
SanDisk Technologies LLC |
Nichtflüchtiger speicher und verfahren mit indexprogrammierung und verringertem verifzieren
|
US7848144B2
(en)
*
|
2008-06-16 |
2010-12-07 |
Sandisk Corporation |
Reverse order page writing in flash memories
|
US7800956B2
(en)
*
|
2008-06-27 |
2010-09-21 |
Sandisk Corporation |
Programming algorithm to reduce disturb with minimal extra time penalty
|
US8064252B2
(en)
*
|
2008-11-21 |
2011-11-22 |
Micron Technology, Inc. |
Multi-pass programming in a memory device
|
US7839690B2
(en)
*
|
2008-12-11 |
2010-11-23 |
Sandisk Corporation |
Adaptive erase and soft programming for memory
|
US7974133B2
(en)
|
2009-01-06 |
2011-07-05 |
Sandisk Technologies Inc. |
Robust sensing circuit and method
|
WO2010089815A1
(ja)
*
|
2009-02-06 |
2010-08-12 |
パナソニック株式会社 |
不揮発性半導体メモリ
|
US8223551B2
(en)
*
|
2009-02-19 |
2012-07-17 |
Micron Technology, Inc. |
Soft landing for desired program threshold voltage
|
JP2010211883A
(ja)
*
|
2009-03-11 |
2010-09-24 |
Toshiba Corp |
不揮発性半導体記憶装置
|
US7907449B2
(en)
|
2009-04-09 |
2011-03-15 |
Sandisk Corporation |
Two pass erase for non-volatile storage
|
US8054691B2
(en)
|
2009-06-26 |
2011-11-08 |
Sandisk Technologies Inc. |
Detecting the completion of programming for non-volatile storage
|
JP2011014179A
(ja)
*
|
2009-06-30 |
2011-01-20 |
Toshiba Corp |
不揮発性半導体記憶装置
|
KR101626548B1
(ko)
*
|
2009-07-15 |
2016-06-01 |
삼성전자주식회사 |
비휘발성 메모리 장치, 그것을 포함한 메모리 시스템, 및 그것의 프로그램 방법
|
KR101634340B1
(ko)
*
|
2009-11-03 |
2016-06-28 |
삼성전자주식회사 |
반도체 메모리 장치의 프로그램 방법
|
US8473809B2
(en)
|
2009-11-20 |
2013-06-25 |
Sandisk Technologies Inc. |
Data coding for improved ECC efficiency
|
US8223556B2
(en)
*
|
2009-11-25 |
2012-07-17 |
Sandisk Technologies Inc. |
Programming non-volatile memory with a reduced number of verify operations
|
KR101676816B1
(ko)
|
2010-02-11 |
2016-11-18 |
삼성전자주식회사 |
플래시 메모리 장치 및 그것의 프로그램 방법
|
JP2011198419A
(ja)
*
|
2010-03-19 |
2011-10-06 |
Toshiba Corp |
不揮発性半導体記憶装置およびその書き込み方法
|
US8130551B2
(en)
|
2010-03-31 |
2012-03-06 |
Sandisk Technologies Inc. |
Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage
|
US8218366B2
(en)
|
2010-04-18 |
2012-07-10 |
Sandisk Technologies Inc. |
Programming non-volatile storage including reducing impact from other memory cells
|
US8208310B2
(en)
|
2010-05-04 |
2012-06-26 |
Sandisk Technologies Inc. |
Mitigating channel coupling effects during sensing of non-volatile storage elements
|
US8737117B2
(en)
*
|
2010-05-05 |
2014-05-27 |
Qualcomm Incorporated |
System and method to read a memory cell with a complementary metal-oxide-semiconductor (CMOS) read transistor
|
KR101656384B1
(ko)
*
|
2010-06-10 |
2016-09-12 |
삼성전자주식회사 |
불휘발성 메모리 장치의 데이터 기입 방법
|
US8819503B2
(en)
|
2010-07-02 |
2014-08-26 |
Stec, Inc. |
Apparatus and method for determining an operating condition of a memory cell based on cycle information
|
US8737141B2
(en)
|
2010-07-07 |
2014-05-27 |
Stec, Inc. |
Apparatus and method for determining an operating condition of a memory cell based on cycle information
|
US8737136B2
(en)
|
2010-07-09 |
2014-05-27 |
Stec, Inc. |
Apparatus and method for determining a read level of a memory cell based on cycle information
|
KR101798013B1
(ko)
|
2010-12-30 |
2017-11-16 |
삼성전자주식회사 |
비휘발성 메모리 장치의 프로그램 방법
|
US9047955B2
(en)
|
2011-03-30 |
2015-06-02 |
Stec, Inc. |
Adjusting operating parameters for memory cells based on wordline address and cycle information
|
US8537623B2
(en)
|
2011-07-07 |
2013-09-17 |
Micron Technology, Inc. |
Devices and methods of programming memory cells
|
JP2011204356A
(ja)
*
|
2011-07-19 |
2011-10-13 |
Toshiba Corp |
不揮発性半導体記憶装置
|
US8737132B2
(en)
*
|
2012-01-06 |
2014-05-27 |
Sandisk Technologies Inc. |
Charge cycling by equalizing the source and bit line levels between pulses during no-verify write operations for NAND flash memory
|
US8582381B2
(en)
|
2012-02-23 |
2013-11-12 |
SanDisk Technologies, Inc. |
Temperature based compensation during verify operations for non-volatile storage
|
US9195586B2
(en)
|
2012-02-23 |
2015-11-24 |
Hgst Technologies Santa Ana, Inc. |
Determining bias information for offsetting operating variations in memory cells based on wordline address
|
US8830745B2
(en)
|
2012-07-17 |
2014-09-09 |
Sandisk Technologies Inc. |
Memory system with unverified program step
|
US8885416B2
(en)
|
2013-01-30 |
2014-11-11 |
Sandisk Technologies Inc. |
Bit line current trip point modulation for reading nonvolatile storage elements
|
US9747977B2
(en)
*
|
2013-03-14 |
2017-08-29 |
Intel Corporation |
Methods and systems for verifying cell programming in phase change memory
|
US9183940B2
(en)
|
2013-05-21 |
2015-11-10 |
Aplus Flash Technology, Inc. |
Low disturbance, power-consumption, and latency in NAND read and program-verify operations
|
WO2014210424A2
(en)
|
2013-06-27 |
2014-12-31 |
Aplus Flash Technology, Inc. |
Novel nand array architecture for multiple simultaneous program and read
|
WO2015013689A2
(en)
|
2013-07-25 |
2015-01-29 |
Aplus Flash Technology, Inc. |
Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations
|
KR102118979B1
(ko)
|
2013-09-13 |
2020-06-05 |
삼성전자주식회사 |
불휘발성 메모리 장치 및 그것의 프로그램 방법
|
US9293205B2
(en)
|
2013-09-14 |
2016-03-22 |
Aplus Flash Technology, Inc |
Multi-task concurrent/pipeline NAND operations on all planes
|
WO2015100434A2
(en)
|
2013-12-25 |
2015-07-02 |
Aplus Flash Technology, Inc |
A HYBRID NAND WITH ALL-BL m-PAGE OPERATION SCHEME
|
US9767894B2
(en)
|
2014-06-09 |
2017-09-19 |
Micron Technology, Inc. |
Programming memories with stepped programming pulses
|
US9343141B2
(en)
|
2014-07-15 |
2016-05-17 |
Sandisk Technologies Inc. |
Reprogramming memory with single program pulse per data state
|
US9324419B2
(en)
|
2014-07-15 |
2016-04-26 |
Sandisk Technologies Inc. |
Multiple pass programming for memory with different program pulse widths
|
US9659636B2
(en)
|
2014-07-22 |
2017-05-23 |
Peter Wung Lee |
NAND memory array with BL-hierarchical structure for concurrent all-BL, all-threshold-state program, and alternative-WL program, odd/even read and verify operations
|
US9875805B2
(en)
*
|
2015-01-23 |
2018-01-23 |
Sandisk Technologies Llc |
Double lockout in non-volatile memory
|
KR20160108770A
(ko)
*
|
2015-03-06 |
2016-09-20 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치 및 그것의 동작 방법
|
US9672920B2
(en)
*
|
2015-03-13 |
2017-06-06 |
Macronix International Co., Ltd. |
Electronic device, non-volatile memorty device, and programming method
|
US9548130B2
(en)
|
2015-04-08 |
2017-01-17 |
Sandisk Technologies Llc |
Non-volatile memory with prior state sensing
|
US9570179B2
(en)
|
2015-04-22 |
2017-02-14 |
Sandisk Technologies Llc |
Non-volatile memory with two phased programming
|
US9437319B1
(en)
*
|
2015-06-25 |
2016-09-06 |
Macronix International Co., Ltd. |
Method for programming non-volatile memory with reduced bit line interference and associated device
|
CN106486162B
(zh)
*
|
2015-08-27 |
2019-07-23 |
旺宏电子股份有限公司 |
存储阵列的编程方法
|
KR102503169B1
(ko)
*
|
2015-11-03 |
2023-02-24 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치 및 그것의 동작 방법
|
KR102437591B1
(ko)
|
2015-12-03 |
2022-08-30 |
삼성전자주식회사 |
불휘발성 메모리 시스템의 동작 방법 및 메모리 컨트롤러의 동작 방법
|
US10248499B2
(en)
|
2016-06-24 |
2019-04-02 |
Sandisk Technologies Llc |
Non-volatile storage system using two pass programming with bit error control
|
US10134479B2
(en)
|
2017-04-21 |
2018-11-20 |
Sandisk Technologies Llc |
Non-volatile memory with reduced program speed variation
|
US10553301B2
(en)
|
2017-06-03 |
2020-02-04 |
Sandisk Technologies Llc |
Dynamic read table block filter
|
US10614898B1
(en)
|
2018-09-19 |
2020-04-07 |
Sandisk Technologies Llc |
Adaptive control of memory cell programming voltage
|
EP3853854A4
(de)
*
|
2019-01-23 |
2022-05-04 |
Yangtze Memory Technologies Co., Ltd. |
Verfahren zur programmierung eines speichersystems
|
JP2022525273A
(ja)
*
|
2019-03-26 |
2022-05-12 |
長江存儲科技有限責任公司 |
複数のビット線バイアス電圧を印加することによって、不揮発性メモリデバイスに書き込むための方法
|
US10811111B1
(en)
|
2019-03-26 |
2020-10-20 |
Yangtze Memory Technologies Co., Ltd. |
Non-volatile memory device and method for programming in non-volatile memory device by applying multiple bitline bias voltages
|
US10910076B2
(en)
|
2019-05-16 |
2021-02-02 |
Sandisk Technologies Llc |
Memory cell mis-shape mitigation
|
CN110619916A
(zh)
*
|
2019-08-12 |
2019-12-27 |
长江存储科技有限责任公司 |
存储器编程方法、装置、电子设备及可读存储介质
|
US11527291B2
(en)
*
|
2020-02-14 |
2022-12-13 |
Micron Technology, Inc |
Performing a program operation based on a high voltage pulse to securely erase data
|
US11049578B1
(en)
|
2020-02-19 |
2021-06-29 |
Sandisk Technologies Llc |
Non-volatile memory with program verify skip
|
US11594293B2
(en)
|
2020-07-10 |
2023-02-28 |
Samsung Electronics Co., Ltd. |
Memory device with conditional skip of verify operation during write and operating method thereof
|
US20230410898A1
(en)
*
|
2020-10-19 |
2023-12-21 |
Rambus Inc. |
Flash memory device with photon assisted programming
|
US11532370B1
(en)
|
2021-05-25 |
2022-12-20 |
Sandisk Technologies Llc |
Non-volatile memory with fast multi-level program verify
|