DE602006020494D1 - Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher - Google Patents
Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicherInfo
- Publication number
- DE602006020494D1 DE602006020494D1 DE602006020494T DE602006020494T DE602006020494D1 DE 602006020494 D1 DE602006020494 D1 DE 602006020494D1 DE 602006020494 T DE602006020494 T DE 602006020494T DE 602006020494 T DE602006020494 T DE 602006020494T DE 602006020494 D1 DE602006020494 D1 DE 602006020494D1
- Authority
- DE
- Germany
- Prior art keywords
- programming
- memory cells
- verification
- threshold voltage
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012795 verification Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/322,011 US7307887B2 (en) | 2005-12-29 | 2005-12-29 | Continued verification in non-volatile memory write operations |
US11/322,001 US7352629B2 (en) | 2005-12-29 | 2005-12-29 | Systems for continued verification in non-volatile memory write operations |
PCT/US2006/049220 WO2007079062A1 (en) | 2005-12-29 | 2006-12-27 | Continued verification in non-volatile memory write operations |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006020494D1 true DE602006020494D1 (de) | 2011-04-14 |
Family
ID=38002052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006020494T Active DE602006020494D1 (de) | 2005-12-29 | 2006-12-27 | Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1971984B1 (de) |
JP (1) | JP2009522703A (de) |
KR (1) | KR101000546B1 (de) |
AT (1) | ATE500591T1 (de) |
DE (1) | DE602006020494D1 (de) |
TW (1) | TWI315875B (de) |
WO (1) | WO2007079062A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITRM20080114A1 (it) * | 2008-02-29 | 2009-09-01 | Micron Technology Inc | Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria. |
JP2010211883A (ja) * | 2009-03-11 | 2010-09-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8248850B2 (en) * | 2010-01-28 | 2012-08-21 | Sandisk Technologies Inc. | Data recovery for non-volatile memory based on count of data state-specific fails |
JP2011204356A (ja) * | 2011-07-19 | 2011-10-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5868381B2 (ja) * | 2013-12-03 | 2016-02-24 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
KR101574781B1 (ko) | 2014-04-09 | 2015-12-04 | 윈본드 일렉트로닉스 코포레이션 | 반도체 기억장치 |
US9165659B1 (en) | 2014-05-08 | 2015-10-20 | Sandisk Technologies Inc. | Efficient reprogramming method for tightening a threshold voltage distribution in a memory device |
JP2017054567A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 半導体記憶装置 |
EP3891748B1 (de) | 2019-03-26 | 2023-11-15 | Yangtze Memory Technologies Co., Ltd. | Verfahren zur programmierung einer nichtflüchtigen speichervorrichtung durch anlegen mehrerer bitleitungsvorspannungen |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3796851B2 (ja) * | 1996-10-21 | 2006-07-12 | ソニー株式会社 | 不揮発性半導体記憶装置 |
KR100255957B1 (ko) * | 1997-07-29 | 2000-05-01 | 윤종용 | 전기적으로 소거 및 프로그램 가능한 메모리 셀들을 구비한반도체 메모리 장치 |
JP3898349B2 (ja) * | 1997-07-29 | 2007-03-28 | 株式会社東芝 | 半導体記憶装置 |
JP2000048582A (ja) * | 1998-07-28 | 2000-02-18 | Toshiba Corp | 半導体記憶装置 |
FR2816751A1 (fr) | 2000-11-15 | 2002-05-17 | St Microelectronics Sa | Memoire flash effacable par page |
US7042770B2 (en) * | 2001-07-23 | 2006-05-09 | Samsung Electronics Co., Ltd. | Memory devices with page buffer having dual registers and method of using the same |
US6621741B2 (en) * | 2002-01-30 | 2003-09-16 | Fujitsu Limited | System for programming verification |
US6781884B2 (en) * | 2002-03-11 | 2004-08-24 | Fujitsu Limited | System for setting memory voltage threshold |
US6888758B1 (en) * | 2004-01-21 | 2005-05-03 | Sandisk Corporation | Programming non-volatile memory |
US7020017B2 (en) * | 2004-04-06 | 2006-03-28 | Sandisk Corporation | Variable programming of non-volatile memory |
-
2006
- 2006-12-27 EP EP06848129A patent/EP1971984B1/de not_active Not-in-force
- 2006-12-27 DE DE602006020494T patent/DE602006020494D1/de active Active
- 2006-12-27 KR KR1020087018467A patent/KR101000546B1/ko not_active IP Right Cessation
- 2006-12-27 WO PCT/US2006/049220 patent/WO2007079062A1/en active Application Filing
- 2006-12-27 AT AT06848129T patent/ATE500591T1/de not_active IP Right Cessation
- 2006-12-27 JP JP2008548669A patent/JP2009522703A/ja active Pending
- 2006-12-28 TW TW095149535A patent/TWI315875B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1971984A1 (de) | 2008-09-24 |
ATE500591T1 (de) | 2011-03-15 |
TWI315875B (en) | 2009-10-11 |
KR20080089459A (ko) | 2008-10-06 |
TW200746153A (en) | 2007-12-16 |
JP2009522703A (ja) | 2009-06-11 |
KR101000546B1 (ko) | 2010-12-14 |
WO2007079062A1 (en) | 2007-07-12 |
EP1971984B1 (de) | 2011-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R082 | Change of representative |
Ref document number: 1971984 Country of ref document: EP Representative=s name: KUDLEK & GRUNERT PATENTANWAELTE PARTNERSCHAFT, DE |