ATE363731T1 - Auf geringe leckage ausgerichtete architektur für sub 0,18 mikrometer salizidiertes cmos bauelement - Google Patents

Auf geringe leckage ausgerichtete architektur für sub 0,18 mikrometer salizidiertes cmos bauelement

Info

Publication number
ATE363731T1
ATE363731T1 AT00480066T AT00480066T ATE363731T1 AT E363731 T1 ATE363731 T1 AT E363731T1 AT 00480066 T AT00480066 T AT 00480066T AT 00480066 T AT00480066 T AT 00480066T AT E363731 T1 ATE363731 T1 AT E363731T1
Authority
AT
Austria
Prior art keywords
nitride
trench
pad oxide
semiconductor substrate
layer
Prior art date
Application number
AT00480066T
Other languages
English (en)
Inventor
Eng Hua Lim
Chong Wee Lim
Soh Yun Siah
Kong Hean Lee
Pei Ching Lee
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Application granted granted Critical
Publication of ATE363731T1 publication Critical patent/ATE363731T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT00480066T 1999-07-16 2000-07-13 Auf geringe leckage ausgerichtete architektur für sub 0,18 mikrometer salizidiertes cmos bauelement ATE363731T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/356,003 US6165871A (en) 1999-07-16 1999-07-16 Method of making low-leakage architecture for sub-0.18 μm salicided CMOS device

Publications (1)

Publication Number Publication Date
ATE363731T1 true ATE363731T1 (de) 2007-06-15

Family

ID=23399678

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00480066T ATE363731T1 (de) 1999-07-16 2000-07-13 Auf geringe leckage ausgerichtete architektur für sub 0,18 mikrometer salizidiertes cmos bauelement

Country Status (5)

Country Link
US (1) US6165871A (de)
EP (1) EP1069613B1 (de)
AT (1) ATE363731T1 (de)
DE (1) DE60034999T2 (de)
SG (1) SG81356A1 (de)

Families Citing this family (28)

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KR100338766B1 (ko) 1999-05-20 2002-05-30 윤종용 티(ｔ)형 소자분리막 형성방법을 이용한 엘리베이티드 샐리사이드 소오스/드레인 영역 형성방법 및 이를 이용한 반도체 소자
US6277697B1 (en) * 1999-11-12 2001-08-21 United Microelectronics Corp. Method to reduce inverse-narrow-width effect
KR20010059185A (ko) * 1999-12-30 2001-07-06 박종섭 반도체소자의 소자분리막 형성방법
US6323104B1 (en) 2000-03-01 2001-11-27 Micron Technology, Inc. Method of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitry
US6265285B1 (en) * 2000-10-25 2001-07-24 Vanguard International Semiconductor Corporation Method of forming a self-aligned trench isolation
JP2003060024A (ja) * 2001-08-13 2003-02-28 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
US6541351B1 (en) * 2001-11-20 2003-04-01 International Business Machines Corporation Method for limiting divot formation in post shallow trench isolation processes
KR100458767B1 (ko) * 2002-07-04 2004-12-03 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US6727150B2 (en) 2002-07-26 2004-04-27 Micron Technology, Inc. Methods of forming trench isolation within a semiconductor substrate including, Tshaped trench with spacers
US6586314B1 (en) * 2002-10-08 2003-07-01 Chartered Semiconductor Manufacturing Ltd. Method of forming shallow trench isolation regions with improved corner rounding
KR100888150B1 (ko) * 2002-12-24 2009-03-16 동부일렉트로닉스 주식회사 반도체 소자의 트렌치 형성 방법
KR100958619B1 (ko) * 2002-12-31 2010-05-20 동부일렉트로닉스 주식회사 엔드 타입 플래시 메모리셀 제조방법
KR101012438B1 (ko) 2003-08-25 2011-02-08 매그나칩 반도체 유한회사 반도체 소자의 제조방법
US7238564B2 (en) * 2005-03-10 2007-07-03 Taiwan Semiconductor Manufacturing Company Method of forming a shallow trench isolation structure
JP2006278754A (ja) 2005-03-29 2006-10-12 Fujitsu Ltd 半導体装置及びその製造方法
KR100707593B1 (ko) * 2005-12-27 2007-04-13 동부일렉트로닉스 주식회사 반도체 소자의 이중 소자분리 구조 및 그 형성 방법
US20070149996A1 (en) * 2005-12-28 2007-06-28 Medtronic Vascular, Inc. Low profile filter
KR100932314B1 (ko) * 2007-08-24 2009-12-16 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US8765491B2 (en) 2010-10-28 2014-07-01 International Business Machines Corporation Shallow trench isolation recess repair using spacer formation process
US9111994B2 (en) * 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US8623713B2 (en) 2011-09-15 2014-01-07 International Business Machines Corporation Trench isolation structure
US8735991B2 (en) * 2011-12-01 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. High gate density devices and methods
CN103165507A (zh) * 2011-12-09 2013-06-19 上海华虹Nec电子有限公司 防止浅沟槽隔离边缘漏电的方法
US20140147985A1 (en) * 2012-11-29 2014-05-29 Freescale Semiconductor, Inc. Methods for the fabrication of semiconductor devices including sub-isolation buried layers
US9653507B2 (en) 2014-06-25 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench isolation shrinkage method for enhanced device performance
KR101867755B1 (ko) * 2017-01-26 2018-06-15 매그나칩 반도체 유한회사 반도체 소자 및 그 제조 방법
US11935780B2 (en) * 2021-11-11 2024-03-19 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
WO2023130203A1 (en) 2022-01-04 2023-07-13 Yangtze Memory Technologies Co., Ltd. Semiconductor devices, memory devices, and methods for forming the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3324832B2 (ja) * 1993-07-28 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
KR0151051B1 (ko) * 1995-05-30 1998-12-01 김광호 반도체장치의 절연막 형성방법
KR100197648B1 (ko) * 1995-08-26 1999-06-15 김영환 반도체소자의 소자분리 절연막 형성방법
KR0168194B1 (ko) * 1995-12-14 1999-02-01 김광호 반도체 소자의 소자분리막 형성방법
KR100192178B1 (ko) * 1996-01-11 1999-06-15 김영환 반도체 소자의 아이솔레이션 방법
US5834360A (en) * 1996-07-31 1998-11-10 Stmicroelectronics, Inc. Method of forming an improved planar isolation structure in an integrated circuit
KR100195243B1 (ko) * 1996-09-05 1999-06-15 윤종용 얕은 트랜치 분리를 이용한 반도체 장치의 제조방법
US5895253A (en) * 1997-08-22 1999-04-20 Micron Technology, Inc. Trench isolation for CMOS devices
US5801083A (en) * 1997-10-20 1998-09-01 Chartered Semiconductor Manufacturing, Ltd. Use of polymer spacers for the fabrication of shallow trench isolation regions with rounded top corners
US6020030A (en) * 1998-05-07 2000-02-01 Aluminum Company Of America Coating an aluminum alloy substrate

Also Published As

Publication number Publication date
US6165871A (en) 2000-12-26
EP1069613B1 (de) 2007-05-30
EP1069613A3 (de) 2004-08-18
DE60034999T2 (de) 2008-01-31
DE60034999D1 (de) 2007-07-12
EP1069613A2 (de) 2001-01-17
SG81356A1 (en) 2001-06-19

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