ATE362650T1 - Hochtemperatur elektrostatischer halter - Google Patents

Hochtemperatur elektrostatischer halter

Info

Publication number
ATE362650T1
ATE362650T1 AT00311471T AT00311471T ATE362650T1 AT E362650 T1 ATE362650 T1 AT E362650T1 AT 00311471 T AT00311471 T AT 00311471T AT 00311471 T AT00311471 T AT 00311471T AT E362650 T1 ATE362650 T1 AT E362650T1
Authority
AT
Austria
Prior art keywords
chuck
heat transfer
high temperature
temperature electrostatic
electrostatic holder
Prior art date
Application number
AT00311471T
Other languages
German (de)
English (en)
Inventor
Greg Sexton
Mark Allen Kennard
Alan Schoepp
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE362650T1 publication Critical patent/ATE362650T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
AT00311471T 1999-12-22 2000-12-20 Hochtemperatur elektrostatischer halter ATE362650T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/469,287 US6377437B1 (en) 1999-12-22 1999-12-22 High temperature electrostatic chuck

Publications (1)

Publication Number Publication Date
ATE362650T1 true ATE362650T1 (de) 2007-06-15

Family

ID=23863212

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00311471T ATE362650T1 (de) 1999-12-22 2000-12-20 Hochtemperatur elektrostatischer halter

Country Status (6)

Country Link
US (2) US6377437B1 (https=)
EP (1) EP1111661B1 (https=)
JP (1) JP4805450B2 (https=)
AT (1) ATE362650T1 (https=)
DE (1) DE60034862T2 (https=)
TW (1) TW487951B (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
US6563686B2 (en) * 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US6559001B2 (en) 2001-05-30 2003-05-06 International Business Machines Corporation Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6853953B2 (en) * 2001-08-07 2005-02-08 Tokyo Electron Limited Method for characterizing the performance of an electrostatic chuck
DE10216786C5 (de) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden
US7032536B2 (en) * 2002-10-11 2006-04-25 Sharp Kabushiki Kaisha Thin film formation apparatus including engagement members for support during thermal expansion
US20040079289A1 (en) * 2002-10-23 2004-04-29 Kellerman Peter L. Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7532310B2 (en) * 2004-10-22 2009-05-12 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
KR100722932B1 (ko) * 2005-09-26 2007-05-30 삼성전자주식회사 온도 감지 장치를 구비하는 정전척 및 이를 구비하는 노광장비 및 포토마스크 표면의 온도를 감지하는 방법
KR100702846B1 (ko) * 2006-05-16 2007-04-03 삼성전자주식회사 이온주입설비의 정전척 크리닝장치
US9147588B2 (en) * 2007-03-09 2015-09-29 Tel Nexx, Inc. Substrate processing pallet with cooling
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
CN101351076B (zh) * 2008-09-16 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
JP5459907B2 (ja) * 2010-01-27 2014-04-02 東京エレクトロン株式会社 基板載置装置の評価装置、及びその評価方法、並びにそれに用いる評価用基板
US9673037B2 (en) 2011-05-31 2017-06-06 Law Research Corporation Substrate freeze dry apparatus and method
US9117867B2 (en) * 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US10586686B2 (en) * 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
JP6112016B2 (ja) * 2011-12-14 2017-04-12 株式会社ニコン 基板ホルダ及び基板貼り合わせ装置
US9948214B2 (en) * 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
US8895452B2 (en) * 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
JP6581602B2 (ja) * 2014-02-06 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計
CN105431924B (zh) * 2014-04-09 2020-11-17 应用材料公司 用于解决具有改良的流动均匀性/气体传导性的可变的处理容积的对称腔室主体设计架构
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US9673071B2 (en) 2014-10-23 2017-06-06 Lam Research Corporation Buffer station for thermal control of semiconductor substrates transferred therethrough and method of transferring semiconductor substrates
CN107636197B (zh) * 2015-06-05 2020-01-07 应用材料公司 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层
US20180005851A1 (en) * 2016-07-01 2018-01-04 Lam Research Corporation Chamber filler kit for dielectric etch chamber
CN111448647B (zh) 2018-03-26 2023-08-01 日本碍子株式会社 静电卡盘加热器
JP6873178B2 (ja) * 2019-03-26 2021-05-19 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型
KR102917087B1 (ko) * 2019-05-24 2026-01-22 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 챔버
KR102615216B1 (ko) * 2020-05-15 2023-12-15 세메스 주식회사 정전 척, 기판 처리 장치 및 기판 처리 방법

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
GB2147459A (en) 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
US4692836A (en) 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4534816A (en) 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4615755A (en) 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US4948462A (en) 1989-10-20 1990-08-14 Applied Materials, Inc. Tungsten etch process with high selectivity to photoresist
JP3129452B2 (ja) 1990-03-13 2001-01-29 富士電機株式会社 静電チャック
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5221403A (en) 1990-07-20 1993-06-22 Tokyo Electron Limited Support table for plate-like body and processing apparatus using the table
US5055964A (en) 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
DE69130205T2 (de) 1990-12-25 1999-03-25 Ngk Insulators, Ltd., Nagoya, Aichi Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5350479A (en) 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
DE69432383D1 (de) 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
EP0669644B1 (en) * 1994-02-28 1997-08-20 Applied Materials, Inc. Electrostatic chuck
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US5535090A (en) 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck
US5691876A (en) 1995-01-31 1997-11-25 Applied Materials, Inc. High temperature polyimide electrostatic chuck
JPH08227933A (ja) 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
JP2987085B2 (ja) * 1995-06-28 1999-12-06 日本碍子株式会社 半導体ウエハー保持装置、その製造方法およびその使用方法
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US5730803A (en) 1996-02-23 1998-03-24 Applied Materials, Inc. Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body
US5796066A (en) * 1996-03-29 1998-08-18 Lam Research Corporation Cable actuated drive assembly for vacuum chamber
US5930639A (en) 1996-04-08 1999-07-27 Micron Technology, Inc. Method for precision etching of platinum electrodes
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5948704A (en) 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
JPH1064983A (ja) 1996-08-16 1998-03-06 Sony Corp ウエハステージ
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5922133A (en) * 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
JP2002510146A (ja) 1998-01-13 2002-04-02 アプライド マテリアルズ インコーポレイテッド 異方性プラチナプロファイルのエッチング方法
JP4641569B2 (ja) * 1998-07-24 2011-03-02 日本碍子株式会社 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置

Also Published As

Publication number Publication date
JP4805450B2 (ja) 2011-11-02
TW487951B (en) 2002-05-21
DE60034862D1 (de) 2007-06-28
EP1111661B1 (en) 2007-05-16
EP1111661A3 (en) 2004-02-04
US6567258B2 (en) 2003-05-20
US20020075625A1 (en) 2002-06-20
JP2001250816A (ja) 2001-09-14
DE60034862T2 (de) 2008-01-24
EP1111661A2 (en) 2001-06-27
US6377437B1 (en) 2002-04-23

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