JP2001250816A5 - - Google Patents
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- Publication number
- JP2001250816A5 JP2001250816A5 JP2000391452A JP2000391452A JP2001250816A5 JP 2001250816 A5 JP2001250816 A5 JP 2001250816A5 JP 2000391452 A JP2000391452 A JP 2000391452A JP 2000391452 A JP2000391452 A JP 2000391452A JP 2001250816 A5 JP2001250816 A5 JP 2001250816A5
- Authority
- JP
- Japan
- Prior art keywords
- chuck body
- chuck
- heat transfer
- plenum
- expansion joint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/469287 | 1999-12-22 | ||
| US09/469,287 US6377437B1 (en) | 1999-12-22 | 1999-12-22 | High temperature electrostatic chuck |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001250816A JP2001250816A (ja) | 2001-09-14 |
| JP2001250816A5 true JP2001250816A5 (https=) | 2009-01-08 |
| JP4805450B2 JP4805450B2 (ja) | 2011-11-02 |
Family
ID=23863212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000391452A Expired - Fee Related JP4805450B2 (ja) | 1999-12-22 | 2000-12-22 | 静電チャック及び真空チャンバ内の基板処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6377437B1 (https=) |
| EP (1) | EP1111661B1 (https=) |
| JP (1) | JP4805450B2 (https=) |
| AT (1) | ATE362650T1 (https=) |
| DE (1) | DE60034862T2 (https=) |
| TW (1) | TW487951B (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6184158B1 (en) * | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
| JP4697833B2 (ja) * | 2000-06-14 | 2011-06-08 | キヤノンアネルバ株式会社 | 静電吸着機構及び表面処理装置 |
| JP2002009139A (ja) * | 2000-06-20 | 2002-01-11 | Nikon Corp | 静電チャック |
| US6563686B2 (en) * | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
| US6559001B2 (en) | 2001-05-30 | 2003-05-06 | International Business Machines Corporation | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor |
| US6669783B2 (en) * | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
| US6853953B2 (en) * | 2001-08-07 | 2005-02-08 | Tokyo Electron Limited | Method for characterizing the performance of an electrostatic chuck |
| DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
| US7032536B2 (en) * | 2002-10-11 | 2006-04-25 | Sharp Kabushiki Kaisha | Thin film formation apparatus including engagement members for support during thermal expansion |
| US20040079289A1 (en) * | 2002-10-23 | 2004-04-29 | Kellerman Peter L. | Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging |
| US7993460B2 (en) * | 2003-06-30 | 2011-08-09 | Lam Research Corporation | Substrate support having dynamic temperature control |
| US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
| US7532310B2 (en) * | 2004-10-22 | 2009-05-12 | Asml Netherlands B.V. | Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck |
| US7479457B2 (en) * | 2005-09-08 | 2009-01-20 | Lam Research Corporation | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |
| KR100722932B1 (ko) * | 2005-09-26 | 2007-05-30 | 삼성전자주식회사 | 온도 감지 장치를 구비하는 정전척 및 이를 구비하는 노광장비 및 포토마스크 표면의 온도를 감지하는 방법 |
| KR100702846B1 (ko) * | 2006-05-16 | 2007-04-03 | 삼성전자주식회사 | 이온주입설비의 정전척 크리닝장치 |
| US9147588B2 (en) * | 2007-03-09 | 2015-09-29 | Tel Nexx, Inc. | Substrate processing pallet with cooling |
| JP5660753B2 (ja) * | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | プラズマエッチング用高温カソード |
| US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
| US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
| CN101351076B (zh) * | 2008-09-16 | 2011-08-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备 |
| JP5262878B2 (ja) * | 2009-03-17 | 2013-08-14 | 東京エレクトロン株式会社 | 載置台構造及びプラズマ成膜装置 |
| JP5459907B2 (ja) * | 2010-01-27 | 2014-04-02 | 東京エレクトロン株式会社 | 基板載置装置の評価装置、及びその評価方法、並びにそれに用いる評価用基板 |
| US9673037B2 (en) | 2011-05-31 | 2017-06-06 | Law Research Corporation | Substrate freeze dry apparatus and method |
| US9117867B2 (en) * | 2011-07-01 | 2015-08-25 | Applied Materials, Inc. | Electrostatic chuck assembly |
| US10586686B2 (en) * | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| JP6112016B2 (ja) * | 2011-12-14 | 2017-04-12 | 株式会社ニコン | 基板ホルダ及び基板貼り合わせ装置 |
| US9948214B2 (en) * | 2012-04-26 | 2018-04-17 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
| US8895452B2 (en) * | 2012-05-31 | 2014-11-25 | Lam Research Corporation | Substrate support providing gap height and planarization adjustment in plasma processing chamber |
| US9101038B2 (en) | 2013-12-20 | 2015-08-04 | Lam Research Corporation | Electrostatic chuck including declamping electrode and method of declamping |
| JP6581602B2 (ja) * | 2014-02-06 | 2019-09-25 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計 |
| CN105431924B (zh) * | 2014-04-09 | 2020-11-17 | 应用材料公司 | 用于解决具有改良的流动均匀性/气体传导性的可变的处理容积的对称腔室主体设计架构 |
| US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
| US10002782B2 (en) | 2014-10-17 | 2018-06-19 | Lam Research Corporation | ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough |
| US9673071B2 (en) | 2014-10-23 | 2017-06-06 | Lam Research Corporation | Buffer station for thermal control of semiconductor substrates transferred therethrough and method of transferring semiconductor substrates |
| CN107636197B (zh) * | 2015-06-05 | 2020-01-07 | 应用材料公司 | 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层 |
| US20180005851A1 (en) * | 2016-07-01 | 2018-01-04 | Lam Research Corporation | Chamber filler kit for dielectric etch chamber |
| CN111448647B (zh) | 2018-03-26 | 2023-08-01 | 日本碍子株式会社 | 静电卡盘加热器 |
| JP6873178B2 (ja) * | 2019-03-26 | 2021-05-19 | 日本碍子株式会社 | 半導体製造装置用部材、その製法及び成形型 |
| KR102917087B1 (ko) * | 2019-05-24 | 2026-01-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 프로세싱 챔버 |
| KR102615216B1 (ko) * | 2020-05-15 | 2023-12-15 | 세메스 주식회사 | 정전 척, 기판 처리 장치 및 기판 처리 방법 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| GB2147459A (en) | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| US4692836A (en) | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| US4579618A (en) | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| US4534816A (en) | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
| US4615755A (en) | 1985-08-07 | 1986-10-07 | The Perkin-Elmer Corporation | Wafer cooling and temperature control for a plasma etching system |
| US5262029A (en) | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US4948462A (en) | 1989-10-20 | 1990-08-14 | Applied Materials, Inc. | Tungsten etch process with high selectivity to photoresist |
| JP3129452B2 (ja) | 1990-03-13 | 2001-01-29 | 富士電機株式会社 | 静電チャック |
| US5238499A (en) | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
| US5221403A (en) | 1990-07-20 | 1993-06-22 | Tokyo Electron Limited | Support table for plate-like body and processing apparatus using the table |
| US5055964A (en) | 1990-09-07 | 1991-10-08 | International Business Machines Corporation | Electrostatic chuck having tapered electrodes |
| US5200232A (en) | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| DE69130205T2 (de) | 1990-12-25 | 1999-03-25 | Ngk Insulators, Ltd., Nagoya, Aichi | Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben |
| US5155652A (en) | 1991-05-02 | 1992-10-13 | International Business Machines Corporation | Temperature cycling ceramic electrostatic chuck |
| US5800618A (en) | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| US5350479A (en) | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
| DE69432383D1 (de) | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase |
| US5511799A (en) * | 1993-06-07 | 1996-04-30 | Applied Materials, Inc. | Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential |
| EP0669644B1 (en) * | 1994-02-28 | 1997-08-20 | Applied Materials, Inc. | Electrostatic chuck |
| US5883778A (en) * | 1994-02-28 | 1999-03-16 | Applied Materials, Inc. | Electrostatic chuck with fluid flow regulator |
| US5535090A (en) | 1994-03-03 | 1996-07-09 | Sherman; Arthur | Electrostatic chuck |
| US5691876A (en) | 1995-01-31 | 1997-11-25 | Applied Materials, Inc. | High temperature polyimide electrostatic chuck |
| JPH08227933A (ja) | 1995-02-20 | 1996-09-03 | Shin Etsu Chem Co Ltd | 静電吸着機能を有するウエハ加熱装置 |
| US5671116A (en) | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
| JP2987085B2 (ja) * | 1995-06-28 | 1999-12-06 | 日本碍子株式会社 | 半導体ウエハー保持装置、その製造方法およびその使用方法 |
| JPH0997830A (ja) * | 1995-07-21 | 1997-04-08 | Fuji Electric Co Ltd | 静電チャックホールダ、ウエハ保持機構ならびにその使用方法 |
| JPH09213781A (ja) * | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
| US5730803A (en) | 1996-02-23 | 1998-03-24 | Applied Materials, Inc. | Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body |
| US5796066A (en) * | 1996-03-29 | 1998-08-18 | Lam Research Corporation | Cable actuated drive assembly for vacuum chamber |
| US5930639A (en) | 1996-04-08 | 1999-07-27 | Micron Technology, Inc. | Method for precision etching of platinum electrodes |
| US5820723A (en) * | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US5948704A (en) | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| JPH1064983A (ja) | 1996-08-16 | 1998-03-06 | Sony Corp | ウエハステージ |
| US5835334A (en) | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
| US5922133A (en) * | 1997-09-12 | 1999-07-13 | Applied Materials, Inc. | Multiple edge deposition exclusion rings |
| JP2002510146A (ja) | 1998-01-13 | 2002-04-02 | アプライド マテリアルズ インコーポレイテッド | 異方性プラチナプロファイルのエッチング方法 |
| JP4641569B2 (ja) * | 1998-07-24 | 2011-03-02 | 日本碍子株式会社 | 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置 |
-
1999
- 1999-12-22 US US09/469,287 patent/US6377437B1/en not_active Expired - Lifetime
-
2000
- 2000-12-15 TW TW089126839A patent/TW487951B/zh not_active IP Right Cessation
- 2000-12-20 DE DE60034862T patent/DE60034862T2/de not_active Expired - Lifetime
- 2000-12-20 AT AT00311471T patent/ATE362650T1/de not_active IP Right Cessation
- 2000-12-20 EP EP00311471A patent/EP1111661B1/en not_active Expired - Lifetime
- 2000-12-22 JP JP2000391452A patent/JP4805450B2/ja not_active Expired - Fee Related
-
2002
- 2002-02-15 US US10/075,601 patent/US6567258B2/en not_active Expired - Lifetime
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