ATE278264T1 - Spannungsbegrenzende vorspannungsschaltung zur reduzierung von degradationseffekten in mos kaskodenschaltungen - Google Patents

Spannungsbegrenzende vorspannungsschaltung zur reduzierung von degradationseffekten in mos kaskodenschaltungen

Info

Publication number
ATE278264T1
ATE278264T1 AT01923205T AT01923205T ATE278264T1 AT E278264 T1 ATE278264 T1 AT E278264T1 AT 01923205 T AT01923205 T AT 01923205T AT 01923205 T AT01923205 T AT 01923205T AT E278264 T1 ATE278264 T1 AT E278264T1
Authority
AT
Austria
Prior art keywords
drain
voltage
cascode
transistor
mos
Prior art date
Application number
AT01923205T
Other languages
English (en)
Inventor
Pawel M Gradzki
Original Assignee
Cadence Design Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cadence Design Systems Inc filed Critical Cadence Design Systems Inc
Application granted granted Critical
Publication of ATE278264T1 publication Critical patent/ATE278264T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
AT01923205T 2000-04-06 2001-04-05 Spannungsbegrenzende vorspannungsschaltung zur reduzierung von degradationseffekten in mos kaskodenschaltungen ATE278264T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/545,321 US6342816B1 (en) 2000-04-06 2000-04-06 Voltage limiting bias circuit for reduction of hot electron degradation effects in MOS cascode circuits
PCT/US2001/011292 WO2001082470A2 (en) 2000-04-06 2001-04-05 Voltage limiting bias circuit for reduction of hot electron degradation effects in mos cascode circuits

Publications (1)

Publication Number Publication Date
ATE278264T1 true ATE278264T1 (de) 2004-10-15

Family

ID=24175754

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01923205T ATE278264T1 (de) 2000-04-06 2001-04-05 Spannungsbegrenzende vorspannungsschaltung zur reduzierung von degradationseffekten in mos kaskodenschaltungen

Country Status (10)

Country Link
US (1) US6342816B1 (de)
EP (1) EP1195004B1 (de)
JP (1) JP2003532321A (de)
CN (1) CN1227808C (de)
AT (1) ATE278264T1 (de)
AU (1) AU2001249919A1 (de)
CA (1) CA2375073A1 (de)
DE (1) DE60105932T2 (de)
IL (1) IL146900A0 (de)
WO (1) WO2001082470A2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545538B1 (en) * 2000-10-03 2003-04-08 Texas Instruments Incorporated Rail-to-rail class AB output stage for operational amplifier with wide supply range
US6487701B1 (en) * 2000-11-13 2002-11-26 International Business Machines Corporation System and method for AC performance tuning by thereshold voltage shifting in tubbed semiconductor technology
US7551024B2 (en) * 2001-03-13 2009-06-23 Marvell World Trade Ltd. Nested transimpedance amplifier
JP3820172B2 (ja) * 2002-03-26 2006-09-13 松下電器産業株式会社 半導体装置の寿命推定方法および信頼性シミュレーション方法
US7190230B1 (en) * 2002-09-11 2007-03-13 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US7253690B1 (en) * 2002-09-11 2007-08-07 Marvell International, Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US6977553B1 (en) 2002-09-11 2005-12-20 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
SE528052C2 (sv) * 2004-02-05 2006-08-22 Infineon Technologies Ag Radiofrekvenseffektförstärkare med kaskadkopplade MOS-transistorer
US7312662B1 (en) 2005-08-09 2007-12-25 Marvell International Ltd. Cascode gain boosting system and method for a transmitter
JP2008005160A (ja) * 2006-06-21 2008-01-10 Sharp Corp カスコード接続増幅回路、および、それを用いた半導体集積回路並びに受信装置
CN101304240B (zh) * 2007-05-09 2010-07-14 瑞鼎科技股份有限公司 电压限制装置及应用其的运算放大器及其电路设计方法
US7859243B2 (en) * 2007-05-17 2010-12-28 National Semiconductor Corporation Enhanced cascode performance by reduced impact ionization
US7560994B1 (en) * 2008-01-03 2009-07-14 Samsung Electro-Mechanics Company Systems and methods for cascode switching power amplifiers
KR102076135B1 (ko) * 2012-12-27 2020-02-11 에스케이하이닉스 주식회사 반도체 장치
US9219445B2 (en) 2012-12-28 2015-12-22 Peregrine Semiconductor Corporation Optimization methods for amplifier with variable supply power
US10243519B2 (en) * 2012-12-28 2019-03-26 Psemi Corporation Bias control for stacked transistor configuration
US11128261B2 (en) 2012-12-28 2021-09-21 Psemi Corporation Constant Vds1 bias control for stacked transistor configuration
US9935585B2 (en) * 2013-12-02 2018-04-03 Qorvo Us, Inc. RF amplifier operational in different power modes
CA2937686C (en) * 2014-02-06 2022-06-28 Fadhel M. Ghannouchi High efficiency ultra-wideband amplifier
KR102579277B1 (ko) * 2015-02-15 2023-09-14 스카이워크스 솔루션즈, 인코포레이티드 강화된 열적 견고성을 위해 스태거형 캐스코드 레이아웃을 갖는 전력 증폭기
JP2017163197A (ja) * 2016-03-07 2017-09-14 パナソニック株式会社 電力増幅回路
CN109326603A (zh) * 2017-02-16 2019-02-12 杰华特微电子（张家港）有限公司 一种基于cmos工艺的单次可编程只读存储器
CN106921349B (zh) * 2017-03-02 2020-10-09 中国电子科技集团公司第二十四研究所 基于反相器结构的放大器
CN109800489B (zh) * 2019-01-02 2023-04-07 广东工业大学 一种基于模型仿真的堆叠型晶体管优化栅偏压设置方法
CN111628738B (zh) * 2020-05-20 2023-07-11 电子科技大学 一种v波段cmos功率放大器
CN111897389A (zh) * 2020-08-25 2020-11-06 特变电工西安柔性输配电有限公司 一种基于三极管串联的线性稳压电路
US20230076801A1 (en) * 2021-09-07 2023-03-09 Cobham Advanced Electronic Solutions, Inc. Bias circuit
CN116781045A (zh) * 2022-03-11 2023-09-19 长鑫存储技术有限公司 偏置信号生成电路与时钟输入电路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986132A (en) * 1975-10-22 1976-10-12 Rca Corporation Series energized transistor amplifier
IT1214249B (it) * 1987-06-10 1990-01-10 Sgs Microelettronica Spa Amplificatore operazionale di potenza cmos ad alte prestazioni.
NL9000326A (nl) * 1989-05-08 1990-12-03 Philips Nv Versterkerschakeling.
US5504444A (en) * 1994-01-24 1996-04-02 Arithmos, Inc. Driver circuits with extended voltage range
US6177838B1 (en) * 1998-11-25 2001-01-23 Pixart Technology, Inc. CMOS gain boosting scheme using pole isolation technique

Also Published As

Publication number Publication date
CA2375073A1 (en) 2001-11-01
EP1195004B1 (de) 2004-09-29
IL146900A0 (en) 2002-08-14
US6342816B1 (en) 2002-01-29
CN1227808C (zh) 2005-11-16
DE60105932D1 (de) 2004-11-04
DE60105932T2 (de) 2005-10-06
CN1366732A (zh) 2002-08-28
WO2001082470A2 (en) 2001-11-01
AU2001249919A1 (en) 2001-11-07
JP2003532321A (ja) 2003-10-28
EP1195004A2 (de) 2002-04-10
WO2001082470A3 (en) 2002-01-31

Similar Documents

Publication Publication Date Title
ATE278264T1 (de) Spannungsbegrenzende vorspannungsschaltung zur reduzierung von degradationseffekten in mos kaskodenschaltungen
US9983239B2 (en) Integrated linear current sense circuitry for semiconductor transistor devices
KR101099406B1 (ko) 캐스코드 회로 및 반도체 장치
JPH05315852A (ja) 電流制限回路および電流制限回路用定電圧源
US5539327A (en) Protection circuit which prevents avalanche breakdown in a fet by having a floating substrate and a voltage controlled gate
KR970072397A (ko) 반도체 장치
US6798277B2 (en) Reference voltage circuit and electronic device
KR970053924A (ko) 정전기보호소자
US7468873B2 (en) Over-voltage protected semiconductor device
KR20020067665A (ko) 기준 전압 회로
KR910005448A (ko) 반도체 집적회로
JP2002016485A (ja) 過電流制限型半導体素子
KR970072377A (ko) 보호 회로
SE0302296D0 (sv) Device for ESD protection of an integrated circuit
KR940020669A (ko) 바이어스 회로(bias circuit)
US6201444B1 (en) Current source bias circuit with hot carrier injection tracking
WO2005046049A3 (en) Mmic distributed amplifier gate control using active bias
KR960039634A (ko) 저전원전압 반도체 장치의 입력버퍼
US20190348978A1 (en) Constant resistance input pass switch with overvoltage protection
KR100253289B1 (ko) 기준전압 발생기
US6489827B1 (en) Reduction of offset voltage in current mirror circuit
KR100446003B1 (ko) 차동 증폭기의 오프셋 제거 회로 및 오프셋이 억제된 차동증폭기
JP2871309B2 (ja) 電源電圧検知回路
KR100283870B1 (ko) 마이크로컴퓨터
KR100205546B1 (ko) 기준전압발생회로

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties