SE0302296D0 - Device for ESD protection of an integrated circuit - Google Patents

Device for ESD protection of an integrated circuit

Info

Publication number
SE0302296D0
SE0302296D0 SE0302296A SE0302296A SE0302296D0 SE 0302296 D0 SE0302296 D0 SE 0302296D0 SE 0302296 A SE0302296 A SE 0302296A SE 0302296 A SE0302296 A SE 0302296A SE 0302296 D0 SE0302296 D0 SE 0302296D0
Authority
SE
Sweden
Prior art keywords
type jfet
source
esd protection
drain
gate
Prior art date
Application number
SE0302296A
Other languages
English (en)
Inventor
Andrej Litwin
Ola Pettersson
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to SE0302296A priority Critical patent/SE0302296D0/sv
Publication of SE0302296D0 publication Critical patent/SE0302296D0/sv
Priority to US10/874,125 priority patent/US7164567B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
SE0302296A 2003-08-27 2003-08-27 Device for ESD protection of an integrated circuit SE0302296D0 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE0302296A SE0302296D0 (sv) 2003-08-27 2003-08-27 Device for ESD protection of an integrated circuit
US10/874,125 US7164567B2 (en) 2003-08-27 2004-06-22 Device for ESD protection of an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302296A SE0302296D0 (sv) 2003-08-27 2003-08-27 Device for ESD protection of an integrated circuit

Publications (1)

Publication Number Publication Date
SE0302296D0 true SE0302296D0 (sv) 2003-08-27

Family

ID=28673194

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302296A SE0302296D0 (sv) 2003-08-27 2003-08-27 Device for ESD protection of an integrated circuit

Country Status (2)

Country Link
US (1) US7164567B2 (sv)
SE (1) SE0302296D0 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768278B2 (en) * 2007-02-14 2010-08-03 Verigy (Singapore) Pte. Ltd. High impedance, high parallelism, high temperature memory test system architecture
TWI396270B (zh) * 2008-01-31 2013-05-11 Raydium Semiconductor Corp 具有靜電放電保護電路之積體電路
US8563336B2 (en) 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8634172B2 (en) 2010-05-18 2014-01-21 International Business Machines Corporation Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structure
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US10181719B2 (en) * 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9831666B2 (en) 2015-05-15 2017-11-28 Analog Devices, Inc. Apparatus and methods for electrostatic discharge protection of radio frequency interfaces
US10763251B2 (en) 2017-09-26 2020-09-01 Texas Instruments Incorporated ESD network comprising variable impedance discharge path

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928370A (ja) * 1982-08-09 1984-02-15 Toshiba Corp 半導体装置
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
US4806999A (en) * 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
ES2055795T3 (es) 1988-11-22 1994-09-01 At & T Corp Separador de salida de circuito integrado que tiene proteccion de esd mejorada.
US5615073A (en) * 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
US5808343A (en) * 1996-09-20 1998-09-15 Integrated Device Technology, Inc. Input structure for digital integrated circuits
US6037636A (en) * 1998-05-19 2000-03-14 National Semiconductor Corporation Electrostatic discharge protection circuit and method
US6292046B1 (en) * 1998-09-30 2001-09-18 Conexant Systems, Inc. CMOS electrostatic discharge protection circuit with minimal loading for high speed circuit applications
US6181214B1 (en) * 1999-11-24 2001-01-30 Lsi Logic Corporation Voltage tolerant oscillator input cell
US6331726B1 (en) * 2000-03-21 2001-12-18 International Business Machines Corporation SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry
TW449842B (en) * 2000-07-13 2001-08-11 United Microelectronics Corp SOI electrostatic discharge protection circuit
SE522909C2 (sv) 2001-09-06 2004-03-16 Ericsson Telefon Ab L M Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor

Also Published As

Publication number Publication date
US7164567B2 (en) 2007-01-16
US20050047037A1 (en) 2005-03-03

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