IL146900A0 - Voltage limiting circuit for reduction of hot electron degradation effects in mos cascade circuits - Google Patents

Voltage limiting circuit for reduction of hot electron degradation effects in mos cascade circuits

Info

Publication number
IL146900A0
IL146900A0 IL14690001A IL14690001A IL146900A0 IL 146900 A0 IL146900 A0 IL 146900A0 IL 14690001 A IL14690001 A IL 14690001A IL 14690001 A IL14690001 A IL 14690001A IL 146900 A0 IL146900 A0 IL 146900A0
Authority
IL
Israel
Prior art keywords
drain
voltage
cascode
transistor
mos
Prior art date
Application number
IL14690001A
Other languages
English (en)
Original Assignee
Cadence Design Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cadence Design Systems Inc filed Critical Cadence Design Systems Inc
Publication of IL146900A0 publication Critical patent/IL146900A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IL14690001A 2000-04-06 2001-04-05 Voltage limiting circuit for reduction of hot electron degradation effects in mos cascade circuits IL146900A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/545,321 US6342816B1 (en) 2000-04-06 2000-04-06 Voltage limiting bias circuit for reduction of hot electron degradation effects in MOS cascode circuits
PCT/US2001/011292 WO2001082470A2 (en) 2000-04-06 2001-04-05 Voltage limiting bias circuit for reduction of hot electron degradation effects in mos cascode circuits

Publications (1)

Publication Number Publication Date
IL146900A0 true IL146900A0 (en) 2002-08-14

Family

ID=24175754

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14690001A IL146900A0 (en) 2000-04-06 2001-04-05 Voltage limiting circuit for reduction of hot electron degradation effects in mos cascade circuits

Country Status (10)

Country Link
US (1) US6342816B1 (xx)
EP (1) EP1195004B1 (xx)
JP (1) JP2003532321A (xx)
CN (1) CN1227808C (xx)
AT (1) ATE278264T1 (xx)
AU (1) AU2001249919A1 (xx)
CA (1) CA2375073A1 (xx)
DE (1) DE60105932T2 (xx)
IL (1) IL146900A0 (xx)
WO (1) WO2001082470A2 (xx)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545538B1 (en) * 2000-10-03 2003-04-08 Texas Instruments Incorporated Rail-to-rail class AB output stage for operational amplifier with wide supply range
US6487701B1 (en) * 2000-11-13 2002-11-26 International Business Machines Corporation System and method for AC performance tuning by thereshold voltage shifting in tubbed semiconductor technology
US7551024B2 (en) * 2001-03-13 2009-06-23 Marvell World Trade Ltd. Nested transimpedance amplifier
JP3820172B2 (ja) * 2002-03-26 2006-09-13 松下電器産業株式会社 半導体装置の寿命推定方法および信頼性シミュレーション方法
US7253690B1 (en) * 2002-09-11 2007-08-07 Marvell International, Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US7190230B1 (en) * 2002-09-11 2007-03-13 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US6977553B1 (en) 2002-09-11 2005-12-20 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
SE528052C2 (sv) * 2004-02-05 2006-08-22 Infineon Technologies Ag Radiofrekvenseffektförstärkare med kaskadkopplade MOS-transistorer
US7312662B1 (en) * 2005-08-09 2007-12-25 Marvell International Ltd. Cascode gain boosting system and method for a transmitter
JP2008005160A (ja) * 2006-06-21 2008-01-10 Sharp Corp カスコード接続増幅回路、および、それを用いた半導体集積回路並びに受信装置
CN101304240B (zh) * 2007-05-09 2010-07-14 瑞鼎科技股份有限公司 电压限制装置及应用其的运算放大器及其电路设计方法
US7859243B2 (en) * 2007-05-17 2010-12-28 National Semiconductor Corporation Enhanced cascode performance by reduced impact ionization
US7560994B1 (en) * 2008-01-03 2009-07-14 Samsung Electro-Mechanics Company Systems and methods for cascode switching power amplifiers
KR102076135B1 (ko) * 2012-12-27 2020-02-11 에스케이하이닉스 주식회사 반도체 장치
US11128261B2 (en) 2012-12-28 2021-09-21 Psemi Corporation Constant Vds1 bias control for stacked transistor configuration
US9413298B2 (en) 2012-12-28 2016-08-09 Peregrine Semiconductor Corporation Amplifier dynamic bias adjustment for envelope tracking
US10243519B2 (en) * 2012-12-28 2019-03-26 Psemi Corporation Bias control for stacked transistor configuration
US9935585B2 (en) * 2013-12-02 2018-04-03 Qorvo Us, Inc. RF amplifier operational in different power modes
CA2937686C (en) * 2014-02-06 2022-06-28 Fadhel M. Ghannouchi High efficiency ultra-wideband amplifier
CN107431463B (zh) * 2015-02-15 2021-02-02 天工方案公司 具有针对增强的耐热性的交错共射共基布局的功率放大器
JP2017163197A (ja) * 2016-03-07 2017-09-14 パナソニック株式会社 電力増幅回路
CN106783868B (zh) * 2017-02-16 2019-07-16 杰华特微电子（张家港）有限公司 基于cmos工艺的单次可编程只读存储器
CN106921349B (zh) * 2017-03-02 2020-10-09 中国电子科技集团公司第二十四研究所 基于反相器结构的放大器
CN109800489B (zh) * 2019-01-02 2023-04-07 广东工业大学 一种基于模型仿真的堆叠型晶体管优化栅偏压设置方法
CN111628738B (zh) * 2020-05-20 2023-07-11 电子科技大学 一种v波段cmos功率放大器
US20230076801A1 (en) * 2021-09-07 2023-03-09 Cobham Advanced Electronic Solutions, Inc. Bias circuit
CN116781045A (zh) * 2022-03-11 2023-09-19 长鑫存储技术有限公司 偏置信号生成电路与时钟输入电路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986132A (en) * 1975-10-22 1976-10-12 Rca Corporation Series energized transistor amplifier
IT1214249B (it) * 1987-06-10 1990-01-10 Sgs Microelettronica Spa Amplificatore operazionale di potenza cmos ad alte prestazioni.
NL9000326A (nl) * 1989-05-08 1990-12-03 Philips Nv Versterkerschakeling.
US5504444A (en) * 1994-01-24 1996-04-02 Arithmos, Inc. Driver circuits with extended voltage range
US6177838B1 (en) * 1998-11-25 2001-01-23 Pixart Technology, Inc. CMOS gain boosting scheme using pole isolation technique

Also Published As

Publication number Publication date
US6342816B1 (en) 2002-01-29
AU2001249919A1 (en) 2001-11-07
EP1195004B1 (en) 2004-09-29
EP1195004A2 (en) 2002-04-10
WO2001082470A3 (en) 2002-01-31
CN1366732A (zh) 2002-08-28
ATE278264T1 (de) 2004-10-15
JP2003532321A (ja) 2003-10-28
CA2375073A1 (en) 2001-11-01
DE60105932T2 (de) 2005-10-06
WO2001082470A2 (en) 2001-11-01
DE60105932D1 (de) 2004-11-04
CN1227808C (zh) 2005-11-16

Similar Documents

Publication Publication Date Title
IL146900A0 (en) Voltage limiting circuit for reduction of hot electron degradation effects in mos cascade circuits
US9983239B2 (en) Integrated linear current sense circuitry for semiconductor transistor devices
KR0164496B1 (ko) 정전기보호소자
KR100253645B1 (ko) 기준 전압 발생 회로
US5539327A (en) Protection circuit which prevents avalanche breakdown in a fet by having a floating substrate and a voltage controlled gate
JPH08335122A (ja) 基準電圧用半導体装置
US6798277B2 (en) Reference voltage circuit and electronic device
GB2198005A (en) Series-connected fet voltage equalisation
JP2002016485A (ja) 過電流制限型半導体素子
US6903539B1 (en) Regulated cascode current source with wide output swing
SE0302296D0 (sv) Device for ESD protection of an integrated circuit
US6201444B1 (en) Current source bias circuit with hot carrier injection tracking
US10848142B2 (en) Constant resistance input pass switch with overvoltage protection
WO2005046049A3 (en) Mmic distributed amplifier gate control using active bias
KR100205546B1 (ko) 기준전압발생회로
KR100446003B1 (ko) 차동 증폭기의 오프셋 제거 회로 및 오프셋이 억제된 차동증폭기
Baral et al. Effect of gate‐length downscaling on the analog/RF and linearity performance of InAs‐based nanowire tunnel FET
KR20000002924A (ko) 반도체 장치용 esd 보호회로
JPS5955627A (ja) Ｍｏｓ回路
CN117850534A (zh) 一种源跟随器、源跟随器应用电路和芯片
KR0146848B1 (ko) 고속 입력회로를 갖는 반도체 장치
JPH04105358A (ja) 半導体装置
Thewes et al. Mechanisms of hot-carrier degradation of analog device parameters in n-MOSFETs
Kornegay Submicron silicon carbide CMOS for smartpower applications
KR960002465A (ko) 인핸스먼트형 cmos 집적회로 가변저항장치