ATE232972T1 - Bolometer mit mikrobrückenstruktur - Google Patents

Bolometer mit mikrobrückenstruktur

Info

Publication number
ATE232972T1
ATE232972T1 AT00954753T AT00954753T ATE232972T1 AT E232972 T1 ATE232972 T1 AT E232972T1 AT 00954753 T AT00954753 T AT 00954753T AT 00954753 T AT00954753 T AT 00954753T AT E232972 T1 ATE232972 T1 AT E232972T1
Authority
AT
Austria
Prior art keywords
micro
bolometer
substrate
providing
bridge structure
Prior art date
Application number
AT00954753T
Other languages
German (de)
English (en)
Inventor
John Peter Gillham
Rex Watton
John Charles Alderman
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ATE232972T1 publication Critical patent/ATE232972T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Inorganic Fibers (AREA)
  • Pressure Sensors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Thermistors And Varistors (AREA)
AT00954753T 1999-08-24 2000-08-23 Bolometer mit mikrobrückenstruktur ATE232972T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9919877.2A GB9919877D0 (en) 1999-08-24 1999-08-24 Micro-bridge structure
PCT/GB2000/003243 WO2001014838A1 (en) 1999-08-24 2000-08-23 Micro-bridge structure

Publications (1)

Publication Number Publication Date
ATE232972T1 true ATE232972T1 (de) 2003-03-15

Family

ID=10859608

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00954753T ATE232972T1 (de) 1999-08-24 2000-08-23 Bolometer mit mikrobrückenstruktur

Country Status (14)

Country Link
US (1) US7002153B1 (https=)
EP (1) EP1206687B1 (https=)
JP (1) JP4284019B2 (https=)
KR (1) KR100704518B1 (https=)
CN (2) CN1168960C (https=)
AT (1) ATE232972T1 (https=)
AU (1) AU761197B2 (https=)
CA (1) CA2381311C (https=)
DE (1) DE60001462T2 (https=)
ES (1) ES2192539T3 (https=)
GB (2) GB9919877D0 (https=)
TR (1) TR200200495T2 (https=)
TW (1) TW514723B (https=)
WO (1) WO2001014838A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9919877D0 (en) * 1999-08-24 1999-10-27 Secr Defence Micro-bridge structure
GB2359192B (en) * 1999-09-16 2004-03-31 Sharp Kk Thermal-type infrared radiation detector cell and image capture device incorporating the same
DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
ATE352459T1 (de) 2002-02-02 2007-02-15 Qinetiq Ltd Kopfpositionssensor
GB0424934D0 (en) 2004-11-12 2004-12-15 Qinetiq Ltd Infrared detector
CN101249935B (zh) * 2007-03-31 2011-06-22 浙江大立科技股份有限公司 一种热绝缘微桥结构及其加工方法
US7746236B2 (en) * 2007-05-01 2010-06-29 Honeywell International Inc. Fire detection system and method
US20090014657A1 (en) * 2007-05-01 2009-01-15 Honeywell International Inc. Infrared fire detection system
KR101036329B1 (ko) * 2009-02-13 2011-05-23 조응래 건축용 비계의 보조결합구
CN101780944B (zh) * 2010-01-05 2015-04-29 上海集成电路研发中心有限公司 一种mems微桥结构的制备方法
JP5706174B2 (ja) * 2011-01-26 2015-04-22 三菱電機株式会社 赤外線センサおよび赤外線センサアレイ
JP5721597B2 (ja) * 2011-03-15 2015-05-20 三菱電機株式会社 半導体光素子および半導体光装置
TWI476969B (zh) * 2012-01-13 2015-03-11 Univ Nat Kaohsiung Applied Sci Metal silicide thermal sensor and its preparation method
US9698281B2 (en) * 2012-08-22 2017-07-04 Robert Bosch Gmbh CMOS bolometer
US9368658B2 (en) * 2012-08-31 2016-06-14 Robert Bosch Gmbh Serpentine IR sensor
CN102874735B (zh) * 2012-09-29 2015-01-07 姜利军 双材料微悬臂梁、电磁辐射探测器以及探测方法
US9093594B2 (en) 2012-10-17 2015-07-28 Robert Bosch Gmbh Multi-stack film bolometer
US9903763B2 (en) 2013-09-27 2018-02-27 Robert Bosch Gmbh Titanium nitride for MEMS bolometers
CN105093356A (zh) * 2015-07-31 2015-11-25 哈尔滨工业大学 一种高能量利用率的微桥结构电阻阵列
CN117377378A (zh) 2017-08-31 2024-01-09 谷歌有限责任公司 量子信息处理器件的形成方法
KR101842955B1 (ko) 2017-09-28 2018-03-29 ㈜시리우스 선택식각 공정을 이용한 마이크로 볼로미터 제조방법 및 이에 따라 제조된 마이크로 볼로미터
CN111960377B (zh) * 2020-07-29 2024-03-15 上海集成电路研发中心有限公司 Mems传感器微桥桥面的制作方法
JP7485581B2 (ja) * 2020-10-16 2024-05-16 セイコーＮｐｃ株式会社 赤外線センサ素子及び赤外線センサ
CN113720479B (zh) * 2021-03-26 2022-11-08 北京北方高业科技有限公司 基于cmos工艺的红外探测器像元和红外探测器
JP2023028860A (ja) 2021-08-20 2023-03-03 Tdk株式会社 電磁波センサ
JP2023028859A (ja) 2021-08-20 2023-03-03 Tdk株式会社 電磁波センサ
JP2023033861A (ja) 2021-08-30 2023-03-13 Tdk株式会社 構造体及び電磁波センサ
JP2023033862A (ja) 2021-08-30 2023-03-13 Tdk株式会社 構造体及び電磁波センサ
TWI887664B (zh) * 2023-05-31 2025-06-21 松翰科技股份有限公司 微輻射熱測量計及其製造方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4544441A (en) 1980-09-04 1985-10-01 Battelle-Institut E.V. Method of making a bolometric radiation detector
US5300915A (en) 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
WO1988005166A1 (en) * 1987-01-08 1988-07-14 Massachusetts Institute Of Technology Turbulent shear force microsensor
US5010251A (en) 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
US5021663B1 (en) 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
US5286976A (en) 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
JPH06317475A (ja) * 1991-07-19 1994-11-15 Terumo Corp 赤外線センサおよびその製造方法
US5288649A (en) 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
EP0566156B1 (en) * 1992-04-17 1997-08-27 Terumo Kabushiki Kaisha Infrared sensor and method for production thereof
DE69328440T3 (de) 1992-06-19 2009-05-07 Honeywell, Inc., Minneapolis Infrarot kamera mit thermoelektrischer temperaturstabilisierung
WO1994001743A1 (en) * 1992-07-08 1994-01-20 Honeywell Inc. Microstructure design for high ir sensitivity
US5399897A (en) 1993-11-29 1995-03-21 Raytheon Company Microstructure and method of making such structure
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus
JP2710228B2 (ja) 1994-08-11 1998-02-10 日本電気株式会社 ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路
DE4438704C1 (de) 1994-10-29 1996-04-04 Kali & Salz Ag Röhrenfreifallscheider zur Trennung von Kunststoffgemengen
US6392232B1 (en) 1995-07-21 2002-05-21 Pharmarcopeia, Inc. High fill factor bolometer array
US5811815A (en) * 1995-11-15 1998-09-22 Lockheed-Martin Ir Imaging Systems, Inc. Dual-band multi-level microbridge detector
US5584117A (en) * 1995-12-11 1996-12-17 Industrial Technology Research Institute Method of making an interferometer-based bolometer
US5942791A (en) * 1996-03-06 1999-08-24 Gec-Marconi Limited Micromachined devices having microbridge structure
FR2752299B1 (fr) 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
US6137107A (en) 1996-08-30 2000-10-24 Raytheon Company Thermal detector with inter-digitated thin film electrodes and method
JPH10132652A (ja) * 1996-10-29 1998-05-22 Masanori Okuyama 熱型赤外線検出素子、熱型赤外線撮像素子およびその製造方法
JPH1144582A (ja) 1997-07-28 1999-02-16 Matsushita Electric Works Ltd 赤外線検出器及びこれを用いたガス検出器
JPH11148861A (ja) * 1997-09-09 1999-06-02 Honda Motor Co Ltd マイクロブリッジ構造
US6144030A (en) 1997-10-28 2000-11-07 Raytheon Company Advanced small pixel high fill factor uncooled focal plane array
GB2335077B (en) 1998-03-04 2003-05-28 Marconi Gec Ltd Radiation detectors
JPH11326037A (ja) 1998-05-12 1999-11-26 Mitsubishi Electric Corp 赤外線検出器用真空パッケージ及びその製造方法
US6198098B1 (en) 1998-05-26 2001-03-06 Philips Laou Microstructure for infrared detector and method of making same
WO2000004354A1 (en) 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer
US6307194B1 (en) 1999-06-07 2001-10-23 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method
GB9919877D0 (en) * 1999-08-24 1999-10-27 Secr Defence Micro-bridge structure
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system

Also Published As

Publication number Publication date
KR100704518B1 (ko) 2007-04-09
JP4284019B2 (ja) 2009-06-24
GB2370156A (en) 2002-06-19
WO2001014838A1 (en) 2001-03-01
CA2381311A1 (en) 2001-03-01
GB0201115D0 (en) 2002-03-06
AU6711000A (en) 2001-03-19
HK1070940A1 (zh) 2005-06-30
TW514723B (en) 2002-12-21
KR20020060692A (ko) 2002-07-18
CA2381311C (en) 2009-02-03
DE60001462T2 (de) 2003-12-04
DE60001462D1 (de) 2003-03-27
CN1168960C (zh) 2004-09-29
EP1206687B1 (en) 2003-02-19
CN1371474A (zh) 2002-09-25
CN100383504C (zh) 2008-04-23
TR200200495T2 (tr) 2002-06-21
ES2192539T3 (es) 2003-10-16
JP2003507904A (ja) 2003-02-25
AU761197B2 (en) 2003-05-29
CN1558193A (zh) 2004-12-29
US7002153B1 (en) 2006-02-21
EP1206687A1 (en) 2002-05-22
GB9919877D0 (en) 1999-10-27

Similar Documents

Publication Publication Date Title
ATE232972T1 (de) Bolometer mit mikrobrückenstruktur
ID22434A (id) Pembentukan suatu film semikonduktor kristalin diatas substrat gelas
FR2798223B1 (fr) Dispositif a semiconducteur et procede de fabrication de celui-ci
FR2792458B1 (fr) Dispositif a semi-conducteur et son procede de fabrication
EP1414005A4 (en) INSPECTION PROCEDURE, SEMICONDUCTOR ELEMENT AND DISPLAY
EE200200261A (et) Meetod räninanostruktuuri, ränikvantviikude massiivi ning sellel baseeruvate komponentide formeerimiseks
DE60008426D1 (de) Kontaktempfindliche vorrichtung
EP1037272A4 (en) SILICON ON ISOLATOR (SOI) SUBSTRATE AND SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
ATE295691T1 (de) Schutzelement, speziell für kurze hosen
EP0867702A3 (en) Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
EP0713250A3 (en) Material for semiconductor substrate, its manufacture and product from this substrate
EP0643421A3 (en) Semiconductor device and associated manufacturing method.
EP1168407A4 (en) DEVICE FOR COATING WITH PHOSPHORESCENT INK, PLASMA DISPLAY PANEL AND METHOD FOR PRODUCING THE SAME
NL1017143A1 (nl) Glazen voorwerp en glassubstraat voor een beeldplaat.
EP1336998A4 (en) ELECTROCHEMICAL DEVICE AND METHOD FOR THE PRODUCTION THEREOF
EP1424590A4 (en) DISPLAY DEVICE AND METHOD FOR PRODUCING THE DISPLAY DEVICE
TW200509424A (en) Contact pressure sensor and method for manufacturing the same
EP1164640A4 (en) Semiconductor device and manufacture thereof
EP1104886A4 (en) QUANTITATIVE CHROMATOGRAPHIC MEASURING DEVICE AND METHOD FOR THEIR PRODUCTION
IT1313260B1 (it) Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.
EP1826813A4 (en) STAGE EQUIPMENT AND EXPOSURE DEVICE
EP1111686A4 (en) SEMICONDUCTOR SUBJECT AND METHOD OF MANUFACTURING
FR2819939B1 (fr) Dispositif a semiconducteur a structure soi et procede de fabrication
NL1015249A1 (nl) Substraat voor vloeibare kristalcellen, vloeibare kristalcellen en weergeefinrichting met vloeibare kristallen.
GB2313912B (en) Thin film technology for the fabrication of sensitive, robust biosensors

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties