HK1070940A1 - Micro-bridge structure - Google Patents

Micro-bridge structure

Info

Publication number
HK1070940A1
HK1070940A1 HK05103609A HK05103609A HK1070940A1 HK 1070940 A1 HK1070940 A1 HK 1070940A1 HK 05103609 A HK05103609 A HK 05103609A HK 05103609 A HK05103609 A HK 05103609A HK 1070940 A1 HK1070940 A1 HK 1070940A1
Authority
HK
Hong Kong
Prior art keywords
micro
substrate
providing
surface region
bridge structure
Prior art date
Application number
HK05103609A
Other languages
English (en)
Inventor
John Peter Gillham
Rex Watton
John Charles Alderman
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of HK1070940A1 publication Critical patent/HK1070940A1/xx

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0853Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22Electrical features thereof
    • G01J5/24Use of specially adapted circuits, e.g. bridge circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Pressure Sensors (AREA)
  • Inorganic Fibers (AREA)
  • Thermistors And Varistors (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK05103609A 1999-08-24 2005-04-27 Micro-bridge structure HK1070940A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9919877.2A GB9919877D0 (en) 1999-08-24 1999-08-24 Micro-bridge structure

Publications (1)

Publication Number Publication Date
HK1070940A1 true HK1070940A1 (en) 2005-06-30

Family

ID=10859608

Family Applications (1)

Application Number Title Priority Date Filing Date
HK05103609A HK1070940A1 (en) 1999-08-24 2005-04-27 Micro-bridge structure

Country Status (15)

Country Link
US (1) US7002153B1 (zh)
EP (1) EP1206687B1 (zh)
JP (1) JP4284019B2 (zh)
KR (1) KR100704518B1 (zh)
CN (2) CN1168960C (zh)
AT (1) ATE232972T1 (zh)
AU (1) AU761197B2 (zh)
CA (1) CA2381311C (zh)
DE (1) DE60001462T2 (zh)
ES (1) ES2192539T3 (zh)
GB (2) GB9919877D0 (zh)
HK (1) HK1070940A1 (zh)
TR (1) TR200200495T2 (zh)
TW (1) TW514723B (zh)
WO (1) WO2001014838A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9919877D0 (en) * 1999-08-24 1999-10-27 Secr Defence Micro-bridge structure
GB2359192B (en) * 1999-09-16 2004-03-31 Sharp Kk Thermal-type infrared radiation detector cell and image capture device incorporating the same
DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
EP1772321A3 (en) 2002-02-02 2007-07-11 Qinetiq Limited Method of Identifying and Tracking Objects
GB0424934D0 (en) 2004-11-12 2004-12-15 Qinetiq Ltd Infrared detector
CN101249935B (zh) * 2007-03-31 2011-06-22 浙江大立科技股份有限公司 一种热绝缘微桥结构及其加工方法
US7746236B2 (en) * 2007-05-01 2010-06-29 Honeywell International Inc. Fire detection system and method
US20090014657A1 (en) * 2007-05-01 2009-01-15 Honeywell International Inc. Infrared fire detection system
KR101036329B1 (ko) * 2009-02-13 2011-05-23 조응래 건축용 비계의 보조결합구
CN101780944B (zh) * 2010-01-05 2015-04-29 上海集成电路研发中心有限公司 一种mems微桥结构的制备方法
JP5706174B2 (ja) * 2011-01-26 2015-04-22 三菱電機株式会社 赤外線センサおよび赤外線センサアレイ
JP5721597B2 (ja) * 2011-03-15 2015-05-20 三菱電機株式会社 半導体光素子および半導体光装置
TWI476969B (zh) * 2012-01-13 2015-03-11 Univ Nat Kaohsiung Applied Sci Metal silicide thermal sensor and its preparation method
US9698281B2 (en) * 2012-08-22 2017-07-04 Robert Bosch Gmbh CMOS bolometer
US9368658B2 (en) * 2012-08-31 2016-06-14 Robert Bosch Gmbh Serpentine IR sensor
CN102874735B (zh) * 2012-09-29 2015-01-07 姜利军 双材料微悬臂梁、电磁辐射探测器以及探测方法
EP2909591B1 (en) * 2012-10-17 2023-06-21 Robert Bosch GmbH Multi-stack film bolometer
EP3050105B1 (en) * 2013-09-27 2020-11-11 Robert Bosch GmbH Semiconductor bolometer and method of fabrication thereof
CN105093356A (zh) * 2015-07-31 2015-11-25 哈尔滨工业大学 一种高能量利用率的微桥结构电阻阵列
WO2019045762A1 (en) * 2017-08-31 2019-03-07 Google Llc TRAINING DEVICE FOR PROCESSING QUANTUM INFORMATION
KR101842955B1 (ko) 2017-09-28 2018-03-29 ㈜시리우스 선택식각 공정을 이용한 마이크로 볼로미터 제조방법 및 이에 따라 제조된 마이크로 볼로미터
CN111960377B (zh) * 2020-07-29 2024-03-15 上海集成电路研发中心有限公司 Mems传感器微桥桥面的制作方法
JP7485581B2 (ja) 2020-10-16 2024-05-16 セイコーNpc株式会社 赤外線センサ素子及び赤外線センサ
CN113720479B (zh) * 2021-03-26 2022-11-08 北京北方高业科技有限公司 基于cmos工艺的红外探测器像元和红外探测器
JP2023028860A (ja) 2021-08-20 2023-03-03 Tdk株式会社 電磁波センサ

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4544441A (en) * 1980-09-04 1985-10-01 Battelle-Institut E.V. Method of making a bolometric radiation detector
US5300915A (en) 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
WO1988005166A1 (en) * 1987-01-08 1988-07-14 Massachusetts Institute Of Technology Turbulent shear force microsensor
US5010251A (en) 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
US5021663B1 (en) 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
US5286976A (en) 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
JPH06317475A (ja) * 1991-07-19 1994-11-15 Terumo Corp 赤外線センサおよびその製造方法
US5288649A (en) 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5397897A (en) 1992-04-17 1995-03-14 Terumo Kabushiki Kaisha Infrared sensor and method for production thereof
CA2117476C (en) 1992-06-19 2000-02-22 R. Andrew Wood Infrared camera with thermoelectric temperature stabilization
WO1994001743A1 (en) * 1992-07-08 1994-01-20 Honeywell Inc. Microstructure design for high ir sensitivity
US5399897A (en) 1993-11-29 1995-03-21 Raytheon Company Microstructure and method of making such structure
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus
JP2710228B2 (ja) * 1994-08-11 1998-02-10 日本電気株式会社 ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路
DE4438704C1 (de) 1994-10-29 1996-04-04 Kali & Salz Ag Röhrenfreifallscheider zur Trennung von Kunststoffgemengen
US6392232B1 (en) 1995-07-21 2002-05-21 Pharmarcopeia, Inc. High fill factor bolometer array
US5811815A (en) * 1995-11-15 1998-09-22 Lockheed-Martin Ir Imaging Systems, Inc. Dual-band multi-level microbridge detector
US5584117A (en) 1995-12-11 1996-12-17 Industrial Technology Research Institute Method of making an interferometer-based bolometer
US5942791A (en) * 1996-03-06 1999-08-24 Gec-Marconi Limited Micromachined devices having microbridge structure
FR2752299B1 (fr) 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
US6137107A (en) 1996-08-30 2000-10-24 Raytheon Company Thermal detector with inter-digitated thin film electrodes and method
JPH10132652A (ja) * 1996-10-29 1998-05-22 Masanori Okuyama 熱型赤外線検出素子、熱型赤外線撮像素子およびその製造方法
JPH1144582A (ja) 1997-07-28 1999-02-16 Matsushita Electric Works Ltd 赤外線検出器及びこれを用いたガス検出器
JPH11148861A (ja) * 1997-09-09 1999-06-02 Honda Motor Co Ltd マイクロブリッジ構造
US6144030A (en) 1997-10-28 2000-11-07 Raytheon Company Advanced small pixel high fill factor uncooled focal plane array
GB2335077B (en) * 1998-03-04 2003-05-28 Marconi Gec Ltd Radiation detectors
JPH11326037A (ja) 1998-05-12 1999-11-26 Mitsubishi Electric Corp 赤外線検出器用真空パッケージ及びその製造方法
US6198098B1 (en) 1998-05-26 2001-03-06 Philips Laou Microstructure for infrared detector and method of making same
WO2000004354A1 (en) * 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer
US6307194B1 (en) 1999-06-07 2001-10-23 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method
GB9919877D0 (en) * 1999-08-24 1999-10-27 Secr Defence Micro-bridge structure
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system

Also Published As

Publication number Publication date
WO2001014838A1 (en) 2001-03-01
AU6711000A (en) 2001-03-19
CN1558193A (zh) 2004-12-29
CN100383504C (zh) 2008-04-23
TR200200495T2 (tr) 2002-06-21
JP4284019B2 (ja) 2009-06-24
DE60001462T2 (de) 2003-12-04
KR100704518B1 (ko) 2007-04-09
GB9919877D0 (en) 1999-10-27
AU761197B2 (en) 2003-05-29
CN1168960C (zh) 2004-09-29
EP1206687B1 (en) 2003-02-19
CN1371474A (zh) 2002-09-25
US7002153B1 (en) 2006-02-21
KR20020060692A (ko) 2002-07-18
TW514723B (en) 2002-12-21
ES2192539T3 (es) 2003-10-16
DE60001462D1 (de) 2003-03-27
CA2381311C (en) 2009-02-03
ATE232972T1 (de) 2003-03-15
GB2370156A (en) 2002-06-19
EP1206687A1 (en) 2002-05-22
GB0201115D0 (en) 2002-03-06
CA2381311A1 (en) 2001-03-01
JP2003507904A (ja) 2003-02-25

Similar Documents

Publication Publication Date Title
HK1070940A1 (en) Micro-bridge structure
FR2792458B1 (fr) Dispositif a semi-conducteur et son procede de fabrication
EE200200261A (et) Meetod räninanostruktuuri, ränikvantviikude massiivi ning sellel baseeruvate komponentide formeerimiseks
EP1037272A4 (en) SILICON ON ISOLATOR (SOI) SUBSTRATE AND SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1120818A4 (en) SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE COMPRISING SUCH A SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
EP1113263A3 (en) Microsphere containing sensor
EP1511077A8 (en) Substrate support
WO2001093310A3 (fr) Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
EP0940860A4 (en) SPHERICAL SEMICONDUCTOR ARRANGEMENT, METHOD FOR THE PRODUCTION THEREOF AND SPHERICAL SEMICONDUCTOR ARRANGEMENT MATERIAL
HK1060158A1 (en) A method of depositing a thin film on a substrate,a substrate and a diamond film produced by the me thod
WO2004060562A3 (en) Integrated sample processing devices
EP1826813A4 (en) STAGE DEVICE AND EXPOSURE APPAEIL
AU7552298A (en) Sensor and method for sensing the position of the surface of object, aligner provided with the sensor and method of manufacturing the aligner, and method of manufacturing devices by using the aligner
GB2332650B (en) Etching substrate material,etching process,and article obtained by etching
EP1100107A3 (en) Getter, flat-panel display and method of production thereof
TW200509424A (en) Contact pressure sensor and method for manufacturing the same
FR2772982B1 (fr) Substrat d'anode pour un dispositif d'affichage et son procede de fabrication
AU2002218183A1 (en) Method for detecting the limit state of a material, and device therefor
EP1089326A3 (en) Wafer support with a dustproof covering film and method for producing the same
AU2005200A (en) Pattern matching method and device, position determining method and device, position aligning method and device, exposing method and device, and device and its production method
ATE512564T1 (de) Befestigungsglied, elektrolumineszente vorrichtung damit und substrat für die vorrichtung
WO2003101838A3 (en) Decorative assembly for a floral grouping
IT1313260B1 (it) Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.
GB2313912B (en) Thin film technology for the fabrication of sensitive, robust biosensors
AU1385901A (en) Test system for detecting analytes, a method for the production thereof and its use

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20160823