ATE226752T1 - Teilweise abschaltbare spannungsversorgung für integrierte schaltkreise - Google Patents

Teilweise abschaltbare spannungsversorgung für integrierte schaltkreise

Info

Publication number
ATE226752T1
ATE226752T1 AT98943351T AT98943351T ATE226752T1 AT E226752 T1 ATE226752 T1 AT E226752T1 AT 98943351 T AT98943351 T AT 98943351T AT 98943351 T AT98943351 T AT 98943351T AT E226752 T1 ATE226752 T1 AT E226752T1
Authority
AT
Austria
Prior art keywords
memory
power supply
integrated circuits
disconnectable power
partially
Prior art date
Application number
AT98943351T
Other languages
English (en)
Inventor
Brent Keeth
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE226752T1 publication Critical patent/ATE226752T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
AT98943351T 1997-08-22 1998-08-24 Teilweise abschaltbare spannungsversorgung für integrierte schaltkreise ATE226752T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/918,637 US5946257A (en) 1996-07-24 1997-08-22 Selective power distribution circuit for an integrated circuit
PCT/US1998/017512 WO1999010891A1 (en) 1997-08-22 1998-08-24 Selective power distribution circuit for an integrated circuit

Publications (1)

Publication Number Publication Date
ATE226752T1 true ATE226752T1 (de) 2002-11-15

Family

ID=25440710

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98943351T ATE226752T1 (de) 1997-08-22 1998-08-24 Teilweise abschaltbare spannungsversorgung für integrierte schaltkreise

Country Status (8)

Country Link
US (3) US5946257A (de)
EP (1) EP1019910B1 (de)
JP (1) JP2001514428A (de)
KR (1) KR100358670B1 (de)
AT (1) ATE226752T1 (de)
AU (1) AU9117298A (de)
DE (1) DE69808956T2 (de)
WO (1) WO1999010891A1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3962995A (en) * 1994-10-19 1996-05-15 Micron Technology, Inc. An efficient method for obtaining usable parts from a partially good memory integrated circuit
US5946257A (en) * 1996-07-24 1999-08-31 Micron Technology, Inc. Selective power distribution circuit for an integrated circuit
US6094395A (en) * 1998-03-27 2000-07-25 Infineon Technologies North America Corp. Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs
US6421810B1 (en) * 1999-05-05 2002-07-16 National Semiconductor Corporation Scalable parallel test bus and testing method
DE19924153B4 (de) * 1999-05-26 2006-02-09 Infineon Technologies Ag Schaltungsanordnung zur Reparatur eines Halbleiterspeichers
US6496421B1 (en) 2000-08-31 2002-12-17 Micron Technology, Inc. Distributed cell plate and/or digit equilibrate voltage generator
US6563339B2 (en) * 2001-01-31 2003-05-13 Micron Technology, Inc. Multiple voltage supply switch
KR100426989B1 (ko) * 2001-06-13 2004-04-13 삼성전자주식회사 패키지 전원핀을 이용한 제어신호 인가방법 및 그에 따른집적회로 패키지 구조
US7139397B2 (en) * 2001-07-20 2006-11-21 Stmicroelectronics S.R.L. Hybrid architecture for realizing a random numbers generator
US7057866B2 (en) * 2001-08-14 2006-06-06 International Business Machines Corp. System and method for disconnecting a portion of an integrated circuit
US6525982B1 (en) * 2001-09-11 2003-02-25 Micron Technology, Inc. Methods of programming and circuitry for a programmable element
US6704228B2 (en) * 2001-12-28 2004-03-09 Samsung Electronics Co., Ltd Semiconductor memory device post-repair circuit and method
DE10203129A1 (de) * 2002-01-25 2003-08-07 Infineon Technologies Ag Schaltungsanordnung
US6856569B2 (en) * 2003-01-10 2005-02-15 International Business Machines Corporation Method and system for merging multiple fuse decompression serial bitstreams to support auxiliary fuseblow capability
US7779285B2 (en) * 2003-02-18 2010-08-17 Oracle America, Inc. Memory system including independent isolated power for each memory module
US7437632B2 (en) * 2003-06-24 2008-10-14 Micron Technology, Inc. Circuits and methods for repairing defects in memory devices
DE60325576D1 (de) * 2003-07-16 2009-02-12 St Microelectronics Srl Redundanzschema für einen integrierten Speicherbaustein
US7098689B1 (en) 2003-09-19 2006-08-29 Xilinx, Inc. Disabling unused/inactive resources in programmable logic devices for static power reduction
US7498836B1 (en) 2003-09-19 2009-03-03 Xilinx, Inc. Programmable low power modes for embedded memory blocks
US7504854B1 (en) * 2003-09-19 2009-03-17 Xilinx, Inc. Regulating unused/inactive resources in programmable logic devices for static power reduction
US7581124B1 (en) 2003-09-19 2009-08-25 Xilinx, Inc. Method and mechanism for controlling power consumption of an integrated circuit
US7549139B1 (en) 2003-09-19 2009-06-16 Xilinx, Inc. Tuning programmable logic devices for low-power design implementation
US7498839B1 (en) 2004-10-22 2009-03-03 Xilinx, Inc. Low power zones for programmable logic devices
KR100670700B1 (ko) * 2004-10-30 2007-01-17 주식회사 하이닉스반도체 지연고정루프의 전원공급회로
DE102005015319B4 (de) * 2005-04-01 2008-04-10 Infineon Technologies Ag Elektrisches System mit fehlerhaften Speicherbereichen und Verfahren zum Testen von Speicherbereichen
US7624318B2 (en) * 2005-09-27 2009-11-24 International Business Machines Corporation Method and apparatus for automatically identifying multiple combinations of operational and non-operational components on integrated circuit chips with a single part number
US7498835B1 (en) 2005-11-04 2009-03-03 Xilinx, Inc. Implementation of low power standby modes for integrated circuits
KR100647473B1 (ko) * 2005-11-16 2006-11-23 삼성전자주식회사 멀티 칩 패키지 반도체 장치 및 불량 검출방법
US7345944B1 (en) 2006-01-11 2008-03-18 Xilinx, Inc. Programmable detection of power failure in an integrated circuit
US7609561B2 (en) * 2006-01-18 2009-10-27 Apple Inc. Disabling faulty flash memory dies
CA2541046A1 (en) * 2006-03-27 2007-09-27 Mosaid Technologies Incorporated Power supply testing architecture
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US8000134B2 (en) 2006-05-15 2011-08-16 Apple Inc. Off-die charge pump that supplies multiple flash devices
US7701797B2 (en) * 2006-05-15 2010-04-20 Apple Inc. Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7568135B2 (en) 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US7911834B2 (en) * 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US7802157B2 (en) * 2006-06-22 2010-09-21 Micron Technology, Inc. Test mode for multi-chip integrated circuit packages
KR100784869B1 (ko) * 2006-06-26 2007-12-14 삼성전자주식회사 대기 전류를 줄일 수 있는 메모리 시스템
JP4967532B2 (ja) * 2006-08-25 2012-07-04 富士通セミコンダクター株式会社 半導体集積回路および半導体集積回路のテスト方法
KR100802060B1 (ko) * 2007-02-02 2008-02-11 삼성전자주식회사 과도한 특정 스트레스 항목의 인가를 방지하는 반도체메모리 장치 및 그것의 테스트 방법
CN101636837B (zh) * 2007-03-23 2011-07-27 富士通株式会社 电子装置、安装有电子装置的电子设备、安装有电子装置的物品、电子装置的制造方法
US20080291760A1 (en) * 2007-05-23 2008-11-27 Micron Technology, Inc. Sub-array architecture memory devices and related systems and methods
KR100907000B1 (ko) * 2007-06-11 2009-07-08 주식회사 하이닉스반도체 리던던시 회로
US20100128447A1 (en) * 2008-11-21 2010-05-27 Tyco Electronics Corporation Memory module having voltage regulator module
US8526252B2 (en) * 2009-03-17 2013-09-03 Seagate Technology Llc Quiescent testing of non-volatile memory array
US8705281B2 (en) * 2010-04-06 2014-04-22 Intel Corporation Method and system to isolate memory modules in a solid state drive
US8823405B1 (en) 2010-09-10 2014-09-02 Xilinx, Inc. Integrated circuit with power gating
WO2013003029A2 (en) 2011-06-29 2013-01-03 Rambus Inc. Multi-element memory device with power control for individual elements
EP2907134B1 (de) 2012-10-12 2020-06-10 Thomas Andre Speichervorrichtung mit reduziertem on-chip-rauschen
US10446532B2 (en) 2016-01-13 2019-10-15 Invensas Bonding Technologies, Inc. Systems and methods for efficient transfer of semiconductor elements
US11698669B2 (en) 2021-08-25 2023-07-11 Apple Inc. Scalable, hierarchical power delivery system
US20230121581A1 (en) * 2021-10-14 2023-04-20 Samsung Electronics Co., Ltd. Variable resistance memory device
US12300351B2 (en) * 2022-08-30 2025-05-13 Micron Technology, Inc. Die disablement
US12399648B2 (en) 2022-09-06 2025-08-26 Micron Technology, Inc. Die-based rank management

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3762037A (en) * 1971-03-30 1973-10-02 Ibm Method of testing for the operability of integrated semiconductor circuits having a plurality of separable circuits
US3750116A (en) 1972-06-30 1973-07-31 Ibm Half good chip with low power dissipation
US4829481A (en) 1985-08-20 1989-05-09 Sgs-Thomson Microelectronics, Inc. Defective element disabling circuit having a laser-blown fuse
DE3650442T2 (de) 1985-08-20 1996-04-25 Sgs Thomson Microelectronics Schaltung zur Ausschaltung von Fehlerhaften Elementen mit durch Laser durchgebrannter Sicherung.
JPH0731908B2 (ja) * 1985-10-09 1995-04-10 株式会社東芝 半導体記憶装置
JP3162689B2 (ja) 1986-11-03 2001-05-08 ヒューレット・パッカード・カンパニー メモリ・システム
US4939694A (en) 1986-11-03 1990-07-03 Hewlett-Packard Company Defect tolerant self-testing self-repairing memory system
JPS63164100A (ja) 1986-12-26 1988-07-07 Hiroshi Nakamura 半導体集積回路メモリ
JPS63217821A (ja) 1987-03-06 1988-09-09 Toshiba Corp 半導体集積回路
US5134584A (en) * 1988-07-22 1992-07-28 Vtc Incorporated Reconfigurable memory
US5025344A (en) * 1988-11-30 1991-06-18 Carnegie Mellon University Built-in current testing of integrated circuits
US5235548A (en) * 1989-04-13 1993-08-10 Dallas Semiconductor Corp. Memory with power supply intercept in redundancy logic
US4992984A (en) * 1989-12-28 1991-02-12 International Business Machines Corporation Memory module utilizing partially defective memory chips
US5181205A (en) * 1990-04-10 1993-01-19 National Semiconductor Corporation Short circuit detector circuit for memory arrays
JP3001252B2 (ja) * 1990-11-16 2000-01-24 株式会社日立製作所 半導体メモリ
KR940008208B1 (ko) * 1990-12-22 1994-09-08 삼성전자주식회사 반도체 메모리장치의 리던던트 장치 및 방법
US5235550A (en) * 1991-05-16 1993-08-10 Micron Technology, Inc. Method for maintaining optimum biasing voltage and standby current levels in a DRAM array having repaired row-to-column shorts
JP2812004B2 (ja) * 1991-06-27 1998-10-15 日本電気株式会社 スタティック型ランダムアクセスメモリ装置
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
JPH06203595A (ja) * 1991-08-30 1994-07-22 Texas Instr Inc <Ti> ユニバーサル・モジューラ・メモリ
US5295101A (en) * 1992-01-31 1994-03-15 Texas Instruments Incorporated Array block level redundancy with steering logic
JPH0668700A (ja) * 1992-08-21 1994-03-11 Toshiba Corp 半導体メモリ装置
JPH0676598A (ja) * 1992-08-28 1994-03-18 Mitsubishi Electric Corp 半導体記憶装置
US5412601A (en) * 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
KR950004870B1 (ko) * 1992-11-24 1995-05-15 삼성전자 주식회사 번인 모드에서 분리게이트의 신뢰성 개선회로
US5384727A (en) * 1993-11-08 1995-01-24 Advanced Micro Devices, Inc. Fuse trimming in plastic package devices
JPH07153296A (ja) * 1993-11-26 1995-06-16 Nec Corp 半導体記憶装置
JP3510335B2 (ja) * 1994-07-18 2004-03-29 株式会社ルネサステクノロジ 半導体記憶装置、内部電源電圧発生回路、内部高電圧発生回路、中間電圧発生回路、定電流源、および基準電圧発生回路
AU3962995A (en) * 1994-10-19 1996-05-15 Micron Technology, Inc. An efficient method for obtaining usable parts from a partially good memory integrated circuit
US5615162A (en) * 1995-01-04 1997-03-25 Texas Instruments Incorporated Selective power to memory
US5901105A (en) * 1995-04-05 1999-05-04 Ong; Adrian E Dynamic random access memory having decoding circuitry for partial memory blocks
US5787044A (en) * 1995-10-23 1998-07-28 Micron Technology, Inc. Memory-cell array and a method for repairing the same
US5946257A (en) * 1996-07-24 1999-08-31 Micron Technology, Inc. Selective power distribution circuit for an integrated circuit

Also Published As

Publication number Publication date
DE69808956D1 (de) 2002-11-28
WO1999010891A1 (en) 1999-03-04
KR20010023171A (ko) 2001-03-26
DE69808956T2 (de) 2003-09-11
EP1019910A1 (de) 2000-07-19
JP2001514428A (ja) 2001-09-11
AU9117298A (en) 1999-03-16
KR100358670B1 (ko) 2002-10-31
US6356498B1 (en) 2002-03-12
US6078540A (en) 2000-06-20
US5946257A (en) 1999-08-31
EP1019910B1 (de) 2002-10-23

Similar Documents

Publication Publication Date Title
ATE226752T1 (de) Teilweise abschaltbare spannungsversorgung für integrierte schaltkreise
KR960030230A (ko) 반도체 메모리장치의 전원 승압회로
KR910003670A (ko) 정적형 반도체 기억장치
KR960025802A (ko) Asic 메모리 설계에 내장된 자기-수선 장치 및 방법
TW331644B (en) Dynamic memory device.
KR910019048A (ko) 반도체 집적 회로 장치
KR970003216A (ko) 반도체 메모리 장치의 내부 전원전압 발생 회로
DE69429225D1 (de) Ruhestromprüfbarer RAM
TW374169B (en) Semiconductor memory device
MY131035A (en) Method and apparatus for calibration and validation of high performance dut power supplies
DE69115741D1 (de) Kurzschlussdetektor für Speichermatrix
TW357348B (en) Voltage generating circuit
DE69626607D1 (de) Halbleiterspeicheranordnung mit Spannungsgeneratorschaltung
TW374929B (en) Integrated circuit having a function of testing memory using stress voltage and method of testing memory of the same
DE60133945D1 (de) Spannungsversorgung für prüflinge, mit hoher geschwindigkeit und hoher genauigkeit und mit aktiver boostschaltung
DE59510258D1 (de) Integrierte Halbleiter-Speichervorrichtung mit Redundanzschaltungsanordnung
DE69739284D1 (de) Temperaturkorrelierter Spannungsgeneratorschaltkreis und zugehöriger Spannungsregler für die Speisung einer Speicherzelle mit einer einzigen Stromversorgung, insbesondere vom FLASH-Typ
DE69823888T2 (de) Schnelle spannungserzeugung auf dem chip für integrierte schaltungen niedriger leistung
ATE308136T1 (de) Leiterplattenanordnung
TW430798B (en) Memory device
WO2005114667A3 (en) Internal voltage generator scheme and power management method
TW430805B (en) Semiconductor memory device having a voltage converting circuit
KR950010049A (ko) 전원노이즈감소를 위한 전원라인구조를 가지는 반도체칩
TWI257103B (en) Enabling memory redundancy during testing
KR970008190A (ko) 반도체장치의 모드 설정회로

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties