ATE161360T1 - Verfahren und apparat zur herstellung eines seitenwandkontakts in einer elektrisch veränderbaren nichtflüchtigen speicherzelle - Google Patents
Verfahren und apparat zur herstellung eines seitenwandkontakts in einer elektrisch veränderbaren nichtflüchtigen speicherzelleInfo
- Publication number
- ATE161360T1 ATE161360T1 AT89909313T AT89909313T ATE161360T1 AT E161360 T1 ATE161360 T1 AT E161360T1 AT 89909313 T AT89909313 T AT 89909313T AT 89909313 T AT89909313 T AT 89909313T AT E161360 T1 ATE161360 T1 AT E161360T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cell
- floating gate
- producing
- volatile memory
- polysilicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005641 tunneling Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/227,811 US5023694A (en) | 1988-08-03 | 1988-08-03 | Side wall contact in a nonvolatile electrically alterable memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE161360T1 true ATE161360T1 (de) | 1998-01-15 |
Family
ID=22854565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT89909313T ATE161360T1 (de) | 1988-08-03 | 1989-07-21 | Verfahren und apparat zur herstellung eines seitenwandkontakts in einer elektrisch veränderbaren nichtflüchtigen speicherzelle |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5023694A (de) |
| EP (1) | EP0429509B1 (de) |
| JP (1) | JP2512181B2 (de) |
| KR (1) | KR0165855B1 (de) |
| AT (1) | ATE161360T1 (de) |
| DE (1) | DE68928501T2 (de) |
| WO (1) | WO1990001804A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5153143A (en) * | 1990-02-26 | 1992-10-06 | Delco Electronics Corporation | Method of manufacturing CMOS integrated circuit with EEPROM |
| US5409568A (en) * | 1992-08-04 | 1995-04-25 | Vasche; Gregory S. | Method of fabricating a microelectronic vacuum triode structure |
| DE69531349D1 (de) * | 1995-10-31 | 2003-08-28 | St Microelectronics Srl | Spannungsgenerator für nichtflüchtige elektrisch-programmierbare Speicherzellen |
| US6492678B1 (en) * | 2000-05-03 | 2002-12-10 | Linear Technology Corporation | High voltage MOS transistor with gate extension |
| US7754552B2 (en) * | 2003-07-29 | 2010-07-13 | Intel Corporation | Preventing silicide formation at the gate electrode in a replacement metal gate technology |
| JP4670243B2 (ja) * | 2004-01-29 | 2011-04-13 | ヤマハ株式会社 | Ｅｅｐｒｏｍの製法 |
| US8541622B2 (en) | 2009-06-30 | 2013-09-24 | Nalco Company | Acid gas scrubbing composition |
| US8461335B2 (en) | 2009-06-30 | 2013-06-11 | Nalco Company | Acid gas scrubbing composition |
| US9555364B2 (en) | 2009-06-30 | 2017-01-31 | Nalco Company | Acid gas scrubbing composition |
| US8318114B2 (en) | 2010-04-16 | 2012-11-27 | Nalco Company | Composition for treating acid gas |
| JP5588293B2 (ja) * | 2010-09-30 | 2014-09-10 | セイコーインスツル株式会社 | 半導体不揮発性メモリ装置 |
| US8765083B2 (en) | 2010-11-19 | 2014-07-01 | Nalco Company | Acid gas absorbent composition |
| CN102214702B (zh) * | 2011-05-23 | 2016-02-17 | 上海华虹宏力半导体制造有限公司 | 半导体电容器结构及其形成方法 |
| CN103426728B (zh) * | 2013-08-29 | 2017-06-09 | 上海华虹宏力半导体制造有限公司 | 电容器结构及其制作方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4300212A (en) * | 1979-01-24 | 1981-11-10 | Xicor, Inc. | Nonvolatile static random access memory devices |
| US4373250A (en) * | 1980-11-17 | 1983-02-15 | Signetics Corporation | Process for fabricating a high capacity memory cell |
| JPS5846678A (ja) * | 1981-09-14 | 1983-03-18 | Oki Electric Ind Co Ltd | Ｐｎｐｎ半導体スイツチ |
| NL8200756A (nl) * | 1982-02-25 | 1983-09-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| JPS60226281A (ja) * | 1984-04-25 | 1985-11-11 | Hitachi Ltd | ビデオカメラの信号処理装置 |
| JPS61131486A (ja) * | 1984-11-29 | 1986-06-19 | Res Dev Corp Of Japan | 半導体不揮発性メモリ |
| JPS61208865A (ja) * | 1985-03-13 | 1986-09-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US4599706A (en) * | 1985-05-14 | 1986-07-08 | Xicor, Inc. | Nonvolatile electrically alterable memory |
| US4752912A (en) * | 1985-05-14 | 1988-06-21 | Xicor, Inc. | Nonvolatile electrically alterable memory and method |
| US4764801A (en) * | 1985-10-08 | 1988-08-16 | Motorola Inc. | Poly-sidewall contact transistors |
| US4706102A (en) * | 1985-11-07 | 1987-11-10 | Sprague Electric Company | Memory device with interconnected polysilicon layers and method for making |
| IT1191566B (it) * | 1986-06-27 | 1988-03-23 | Sgs Microelettronica Spa | Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione |
| US4872050A (en) * | 1988-03-15 | 1989-10-03 | Mitsubishi Denki Kabushiki Kaisha | Interconnection structure in semiconductor device and manufacturing method of the same |
-
1988
- 1988-08-03 US US07/227,811 patent/US5023694A/en not_active Expired - Lifetime
-
1989
- 1989-07-21 EP EP89909313A patent/EP0429509B1/de not_active Expired - Lifetime
- 1989-07-21 DE DE68928501T patent/DE68928501T2/de not_active Expired - Lifetime
- 1989-07-21 JP JP1508787A patent/JP2512181B2/ja not_active Expired - Lifetime
- 1989-07-21 KR KR1019900700686A patent/KR0165855B1/ko not_active IP Right Cessation
- 1989-07-21 WO PCT/US1989/003157 patent/WO1990001804A1/en active IP Right Grant
- 1989-07-21 AT AT89909313T patent/ATE161360T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0165855B1 (ko) | 1999-01-15 |
| EP0429509A4 (en) | 1992-07-08 |
| KR900702577A (ko) | 1990-12-07 |
| JPH04502232A (ja) | 1992-04-16 |
| EP0429509B1 (de) | 1997-12-17 |
| DE68928501D1 (de) | 1998-01-29 |
| DE68928501T2 (de) | 1998-05-07 |
| WO1990001804A1 (en) | 1990-02-22 |
| JP2512181B2 (ja) | 1996-07-03 |
| EP0429509A1 (de) | 1991-06-05 |
| US5023694A (en) | 1991-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |