ZA914629B - Isotopically pure single crystal epitaxial diamond films and their preparation - Google Patents
Isotopically pure single crystal epitaxial diamond films and their preparationInfo
- Publication number
- ZA914629B ZA914629B ZA914629A ZA914629A ZA914629B ZA 914629 B ZA914629 B ZA 914629B ZA 914629 A ZA914629 A ZA 914629A ZA 914629 A ZA914629 A ZA 914629A ZA 914629 B ZA914629 B ZA 914629B
- Authority
- ZA
- South Africa
- Prior art keywords
- isotopically
- single crystal
- pure
- diamond
- carbon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/547,651 US5360479A (en) | 1990-07-02 | 1990-07-02 | Isotopically pure single crystal epitaxial diamond films and their preparation |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA914629B true ZA914629B (en) | 1992-06-24 |
Family
ID=24185551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA914629A ZA914629B (en) | 1990-07-02 | 1991-06-17 | Isotopically pure single crystal epitaxial diamond films and their preparation |
Country Status (13)
Country | Link |
---|---|
US (1) | US5360479A (pt) |
EP (1) | EP0464611B1 (pt) |
JP (1) | JPH04270193A (pt) |
KR (1) | KR920002479A (pt) |
CN (1) | CN1057869A (pt) |
AT (1) | ATE128493T1 (pt) |
AU (1) | AU642744B2 (pt) |
BR (1) | BR9102763A (pt) |
CA (1) | CA2042268A1 (pt) |
DE (1) | DE69113335T2 (pt) |
ES (1) | ES2078999T3 (pt) |
IE (1) | IE912296A1 (pt) |
ZA (1) | ZA914629B (pt) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4027580A1 (de) * | 1990-08-31 | 1992-03-05 | Lux Benno | Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung |
CA2076087A1 (en) * | 1991-09-03 | 1993-03-04 | Jerome J. Tiemann | Isotopic diamond coated products and their production |
JPH05270987A (ja) * | 1992-03-27 | 1993-10-19 | Kanagawa Pref Gov | 炭素13同位体ダイヤモンド基板とその製造法 |
US5503104A (en) * | 1995-03-27 | 1996-04-02 | General Electric Company | Synthetic diamond product |
US5636545A (en) * | 1995-07-07 | 1997-06-10 | General Electric Company | Composite diamond wire die |
US5634369A (en) * | 1995-07-07 | 1997-06-03 | General Electric Company | Composite diamond wire die |
US5634370A (en) * | 1995-07-07 | 1997-06-03 | General Electric Company | Composite diamond wire die |
EP0867537A1 (en) * | 1997-03-24 | 1998-09-30 | General Electric Company | Method for the production of low-cost isotopically engineered diamond anvils |
EP0867536A1 (en) * | 1997-03-24 | 1998-09-30 | General Electric Company | Low-cost isotopically engineered diamond amvils |
US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US6858080B2 (en) * | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
US8591856B2 (en) * | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
AU2001266246B2 (en) * | 2000-06-15 | 2004-10-07 | Element Six (Pty) Ltd | Thick single crystal diamond layer method for making it and gemstones produced from the layer |
AU2001281404B2 (en) * | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
WO2005080645A2 (en) * | 2004-02-13 | 2005-09-01 | Apollo Diamond, Inc. | Diamond structure separation |
US20060163584A1 (en) * | 2005-01-26 | 2006-07-27 | Robert Linares | Boron-doped diamond semiconductor |
JP5263893B2 (ja) * | 2007-10-03 | 2013-08-14 | 独立行政法人産業技術総合研究所 | 同位体ダイヤモンド積層体 |
US7972444B2 (en) * | 2007-11-07 | 2011-07-05 | Mattson Technology, Inc. | Workpiece support with fluid zones for temperature control |
GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
GB0813490D0 (en) * | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
WO2014081654A1 (en) * | 2012-11-21 | 2014-05-30 | National Oilwell DHT, L.P. | Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds |
CN104911702B (zh) * | 2015-04-29 | 2017-07-28 | 西安交通大学 | 基于自组装工艺的高质量单晶金刚石生长方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3895313A (en) * | 1973-09-17 | 1975-07-15 | Entropy Conversion | Laser systems with diamond optical elements |
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
JPS60118694A (ja) * | 1983-11-29 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成法 |
CH664768A5 (de) * | 1985-06-20 | 1988-03-31 | Balzers Hochvakuum | Verfahren zur beschichtung von substraten in einer vakuumkammer. |
EP0206820A3 (en) * | 1985-06-27 | 1987-10-28 | De Beers Industrial Diamond Division (Proprietary) Limited | Diamond synthesis |
WO1987003307A1 (en) * | 1985-11-25 | 1987-06-04 | Showa Denko Kabushiki Kaisha | Process for synthesizing diamond |
GB8903793D0 (en) * | 1989-02-20 | 1989-04-05 | Plessey Co Plc | Diamond synthesis |
AU634601B2 (en) * | 1989-12-11 | 1993-02-25 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
-
1990
- 1990-07-02 US US07/547,651 patent/US5360479A/en not_active Expired - Lifetime
-
1991
- 1991-05-09 CA CA002042268A patent/CA2042268A1/en not_active Abandoned
- 1991-06-17 ZA ZA914629A patent/ZA914629B/xx unknown
- 1991-06-20 AU AU79179/91A patent/AU642744B2/en not_active Expired - Fee Related
- 1991-06-25 DE DE69113335T patent/DE69113335T2/de not_active Expired - Fee Related
- 1991-06-25 EP EP91110503A patent/EP0464611B1/en not_active Expired - Lifetime
- 1991-06-25 AT AT91110503T patent/ATE128493T1/de active
- 1991-06-25 ES ES91110503T patent/ES2078999T3/es not_active Expired - Lifetime
- 1991-06-28 JP JP3183989A patent/JPH04270193A/ja active Pending
- 1991-07-01 IE IE229691A patent/IE912296A1/en unknown
- 1991-07-01 BR BR919102763A patent/BR9102763A/pt unknown
- 1991-07-01 KR KR1019910011091A patent/KR920002479A/ko not_active Application Discontinuation
- 1991-07-02 CN CN91104585A patent/CN1057869A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
ES2078999T3 (es) | 1996-01-01 |
US5360479A (en) | 1994-11-01 |
AU7917991A (en) | 1992-01-02 |
KR920002479A (ko) | 1992-02-28 |
AU642744B2 (en) | 1993-10-28 |
ATE128493T1 (de) | 1995-10-15 |
EP0464611B1 (en) | 1995-09-27 |
CA2042268A1 (en) | 1992-01-03 |
DE69113335D1 (de) | 1995-11-02 |
JPH04270193A (ja) | 1992-09-25 |
DE69113335T2 (de) | 1996-04-18 |
BR9102763A (pt) | 1992-02-04 |
CN1057869A (zh) | 1992-01-15 |
EP0464611A1 (en) | 1992-01-08 |
IE912296A1 (en) | 1992-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU642744B2 (en) | Isotopically pure single crystal epitaxial diamond films and their preparation | |
EP0417512B1 (en) | Transparent diamond films and method for making | |
EP0780153B1 (en) | Diamond synthesis | |
Akkerman et al. | Thermal stability of diamondlike carbon films | |
ATE115334T1 (de) | Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern. | |
ATE224228T1 (de) | Sinterverfahren für diamanten und diamant- züchtung | |
AU614605B2 (en) | Diamond growth | |
AU4256889A (en) | Method for the synthesis of polymers based on boron and nitrogen | |
KR930013220A (ko) | 수소화물-형성 금속 기재상에서의 cvd 다이아몬드 성장 | |
ATE247614T1 (de) | Verfahren und reaktor zur herstellung von norbornen | |
JPH01266840A (ja) | ダイヤモンドの結晶を生産する方法 | |
EP0423884A1 (en) | Method for deposition of silicon nitride layers on glass substrates | |
JPS56164523A (en) | Vapor phase growth of semiconductor | |
JPS5928330A (ja) | 半導体の気相成長方法 | |
US3821020A (en) | Method of deposition of silicon by using pyrolysis of silane | |
JPS59164697A (ja) | 気相成長方法 | |
JPS61132595A (ja) | 有機金属熱分解気相結晶成長装置 | |
RU2054056C1 (ru) | Способ получения изотопически чистых алмазных пленок | |
JPS5642350A (en) | Formation of insulating film | |
JPH0510425B2 (pt) | ||
JPH03141199A (ja) | 単結晶cvdダイヤモンドの製造方法 | |
JPS5524413A (en) | Process of epitaxial growth for semiconductor | |
JPH01246196A (ja) | ダイヤモンド膜の製造方法 | |
JPH01259524A (ja) | 化合物半導体の気相成長方法 | |
JPS62208625A (ja) | シリコンエピタキシヤル成長方法 |