WO2023189894A1 - Appareil de traitement de substrat, son procédé d'inspection et système de traitement de substrat - Google Patents

Appareil de traitement de substrat, son procédé d'inspection et système de traitement de substrat Download PDF

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Publication number
WO2023189894A1
WO2023189894A1 PCT/JP2023/011103 JP2023011103W WO2023189894A1 WO 2023189894 A1 WO2023189894 A1 WO 2023189894A1 JP 2023011103 W JP2023011103 W JP 2023011103W WO 2023189894 A1 WO2023189894 A1 WO 2023189894A1
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WIPO (PCT)
Prior art keywords
substrate
substrate processing
image data
liquid
processing apparatus
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PCT/JP2023/011103
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English (en)
Japanese (ja)
Inventor
水根 李
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東京エレクトロン株式会社
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Publication of WO2023189894A1 publication Critical patent/WO2023189894A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present disclosure relates to a substrate processing apparatus, an inspection method thereof, and a substrate processing system.
  • Patent Document 1 describes using a camera to monitor the inside of the unit when no substrates are carried into the liquid processing unit.
  • the present disclosure provides a technology that can efficiently and accurately determine abnormalities within a substrate processing apparatus.
  • a substrate processing apparatus that performs predetermined liquid processing by supplying a processing liquid to an upper surface and a lower surface of a substrate, the substrate holding portion holding the substrate and rotating it around a rotation axis.
  • the substrate holder having a plate that faces the lower surface of the substrate with a gap between the plate and the lower surface of the substrate; and a holder that is provided on the plate and directly holds the substrate; an upper nozzle for supplying the processing liquid to the upper surface of the substrate held by the substrate holder, a lower nozzle for supplying the processing liquid to the lower surface of the substrate held by the substrate holder, and a lower nozzle provided surrounding the periphery of the substrate holder.
  • a liquid receiving cup that receives the processing liquid supplied from the upper nozzle and the lower nozzle, and an imaging unit that captures an image including one or more of the lower nozzle, the plate, and the liquid receiving cup; , a control unit including a determination unit that determines whether there is an abnormality in the imaged area based on the image data acquired from the imaging unit, and the determination unit of the control unit divides the image into a plurality of areas. For each of the plurality of divided image data obtained by dividing the image data into two, compare the gray scale data of the divided image data in a normal state prepared in advance with the gray scale data of the divided image data of the imaged target for judgment. However, there is provided a substrate processing apparatus that is calibrated to determine that there is an abnormality when the difference between the two exceeds a predetermined standard.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing system according to an embodiment of a substrate processing apparatus.
  • 2 is a schematic vertical cross-sectional view showing an example of the configuration of a processing unit included in the substrate processing system of FIG. 1.
  • FIG. FIG. 3 is a schematic cross-sectional view of the processing unit of FIG. 2;
  • 3A is a schematic cross-sectional view showing an example of the arrangement of surveillance cameras in the processing unit of FIG. 2, which is different from that in FIG. 3A.
  • FIG. FIG. 2 is a schematic diagram showing an example of an image captured by a surveillance camera and region division of the image. It is a graph showing the distribution of Gray values (R component) when there is no abnormality (deposit).
  • FIG. 2 is a flowchart illustrating a method of operating a substrate processing system associated with inspection (monitoring) using a surveillance camera. It is a schematic diagram explaining washing of the head of a nozzle unit.
  • FIG. 3 is a schematic diagram illustrating drying of the head of the nozzle unit after cleaning. It is a schematic diagram explaining cleaning of a mist guard.
  • vertical direction is basically based on the vertical direction (direction of gravity), upward means a direction that opposes gravity, and downward means a direction that follows gravity. .
  • FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.
  • an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other are defined, and the positive direction of the Z-axis is defined as a vertically upward direction.
  • the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3.
  • the loading/unloading station 2 and the processing station 3 are provided adjacent to each other.
  • the loading/unloading station 2 includes a carrier mounting section 11 and a transport section 12.
  • the transport section 12 is provided adjacent to the carrier mounting section 11 and includes a substrate transport device 13 and a transfer section 14 inside.
  • the substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 is capable of horizontal and vertical movement and rotation about a vertical axis, and uses a wafer holding mechanism to transfer the wafer W between the carrier C and the transfer section 14. conduct.
  • the processing station 3 is provided adjacent to the transport section 12.
  • the processing station 3 includes a transport section 15 and a plurality of processing units 16.
  • the plurality of processing units 16 are arranged side by side on both sides of the transport section 15 .
  • the transport section 15 includes a substrate transport device 17 inside.
  • the substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 is capable of horizontal and vertical movement and rotation about a vertical axis, and is capable of transferring wafers W between the transfer section 14 and the processing unit 16 using a wafer holding mechanism. I do.
  • the processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.
  • the substrate processing system 1 also includes a control device 4.
  • the control device 4 is, for example, a computer, and includes a control section 18 and a storage section 19.
  • the storage unit 19 stores programs that control various processes executed in the substrate processing system 1.
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing a program stored in the storage unit 19 .
  • Such a program may be one that has been recorded on a computer-readable storage medium, and may be one that is installed in the storage unit 19 of the control device 4 from the storage medium.
  • Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnetic optical disks (MO), and memory cards.
  • the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier mounting section 11, and receives the taken out wafer W. Place it on Watabe 14.
  • the wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
  • the wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out from the processing unit 16 by the substrate transport device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier mounting section 11 by the substrate transfer device 13.
  • FIG. 2 is a diagram showing a schematic configuration of the processing unit 16.
  • the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, and a processing fluid supply unit (which supplies processing fluid to nozzles 41, 61A, 61B, and 61C, which will be described later). ) and a collection cup 50.
  • the chamber 20 accommodates the substrate holding mechanism 30 and the collection cup 50.
  • An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20 .
  • FFU 21 forms a downflow within chamber 20 .
  • the substrate holding mechanism 30 includes a substrate holding section 31, a rotation shaft section 32, and a rotation drive section 33.
  • the substrate holding section 31 holds the wafer W in a horizontal position.
  • the rotation drive section 33 is made of, for example, an electric motor, and rotates the rotation shaft section 32 and the substrate holding section 31 connected to the upper end thereof around an axis (vertical axis) extending in the vertical direction. As a result, the wafer W held in a horizontal position by the substrate holder 31 rotates around the vertical axis.
  • the substrate holder 31 includes a disk-shaped base plate 31a, a plurality of holders 31b, for example, three (only one is shown in FIG. A plurality of lift pins 31c, for example, three (only one is shown in FIG. 2), are provided to support the lower surface of the wafer W separated from the holder 31b during loading and unloading.
  • the plurality of holders 31b include, for example, at least one movable holding claw that can hold and release the peripheral edge of the wafer W, and at least one immovable holding claw.
  • the lift pin 31c is fixed to a ring-shaped lift pin plate 31d stored in a recess formed on the upper surface of the base plate 31a.
  • the lift pin plate 31d can be raised and lowered between a raised position (not shown) and a lowered position (position shown in FIG. 2) by a lifting mechanism (not shown) to raise and lower the wafer W.
  • the wafer W can be transferred between the lift pin plate 31d in the raised position and the arm of the substrate transfer device 17 (not shown in FIG. 2, see FIG. 1) that has entered the chamber 20. can.
  • the collection cup 50 is arranged to surround the substrate holder 31, and plays the role of collecting the processing liquid scattered from the wafer W and controlling the airflow around the wafer W.
  • the recovery cup 50 has an outermost immovable exhaust cup 51 and an innermost drain cup 52 for guiding the processing liquid.
  • Drainage cup 52 can also be constructed with an outermost fixed cup element and one or more movable cup elements that can be raised and lowered, disposed within the fixed cup element. In this case, a plurality of channels are formed in the drain cup 52 depending on the number of movable cup elements, and by switching the positions of the movable cup elements, the destination of the liquid drained from the collection cup 50 (acid drainage (liquid path, alkaline drainage path, organic drainage path) can be switched.
  • a first rotating cup 53 and a second rotating cup 54 are fixed to the base plate 31a of the substrate holder 31 so as to rotate together with the base plate 31a.
  • the first rotary cup 53 and the second rotary cup 54 are provided so as to surround the wafer W held by the holder 31b, and receive the liquid scattered outward from the surface (upper surface) of the wafer W, and diagonally Guide downward (i.e. radially outward and downward).
  • the second rotary cup 54 also has a function of guiding the liquid splashed outward from the back surface (lower surface) of the wafer W.
  • the first rotating cup 53 and the second rotating cup 54 also have the function of controlling the airflow around the wafer W.
  • a gap is provided between each of the first rotating cup 53 and the second rotating cup 54 and the base plate 31a, and the liquid and airflow guided by the first rotating cup 53 and the second rotating cup 54 are allowed to flow through the gap. through which it flows outwardly (towards drain cup 52).
  • An exhaust passage 551 is formed within the exhaust cup 51, and this exhaust passage 551 is connected to the bottom space of the exhaust cup 51, and an exhaust port 552 is provided in the bottom space.
  • the exhaust port 552 is connected to an exhaust pipe in which a flow rate control valve such as a butterfly valve is interposed, and this exhaust pipe is connected to a factory exhaust duct in a reduced pressure atmosphere.
  • the processing fluid supply section includes a plurality of nozzles 41 that supply processing fluid (liquid or gas) to the upper surface of the wafer W held by the substrate holding section 31.
  • the processing fluids discharged from the nozzle 41 include SC1 liquid, SC2 liquid, DHF (dilute hydrofluoric acid), IPA (isopropyl alcohol), nitrogen gas, pure water (DIW), droplets of DIW (pure water), and nitrogen gas. Examples include two fluids that are mixed fluids. At least one of the plurality of nozzles 41 can also be used to clean the substrate holder 31, the recovery cup 50, the mist guard 80 (described later), and the like.
  • Each nozzle arm 42 carries one or more nozzles.
  • Each nozzle arm 42 is attached to an arm drive mechanism 43 attached to the nozzle arm 42, and is capable of moving up and down in the vertical direction and pivoting around a pivot axis extending in the vertical direction. Due to the rotation function of the arm drive mechanism 43, each nozzle 41 can be moved to a position above the center of the wafer W, a position above the periphery of the wafer W, any position in between, and a standby position outside the collection cup 50. position (home position). The raising and lowering function of the arm drive mechanism 43 allows each nozzle 41 to be moved between a close position close to the wafer W and a remote position above the close position and away from the wafer W.
  • the processing fluid supply section further includes a nozzle unit 60 that supplies processing fluid to the center of the lower surface of the wafer W held by the substrate holding section 31.
  • the nozzle unit 60 has a large-diameter head (nozzle head section) 61 equipped with a plurality of nozzles (discharge sections), and a small-diameter shaft section 65 extending downward from the head 61. are doing.
  • An example of the structure of the head 61 is shown in FIGS. 9A and 9B.
  • the head 61 includes nozzles 61A, 61B, and 61C as a plurality of nozzles.
  • a plurality of supply channels 66 are formed in the shaft portion 65 (see FIG.
  • the shaft portion 65 is disposed coaxially with the rotation shaft portion 32 of the substrate holding mechanism 30 inside the rotation shaft portion 32 of the substrate holding mechanism 30 . Even if the rotating shaft portion 32 rotates, the shaft portion 65 of the nozzle unit 60 does not rotate.
  • the nozzle 61A discharges the first chemical liquid L1, the second chemical liquid L2, and DIW (pure water) as a rinse liquid upward.
  • the nozzle 61B discharges DIW upward.
  • the nozzle 61C discharges N 2 gas (nitrogen gas) upward.
  • the head 61 of the nozzle unit 60 is provided with a ring 62 that surrounds the nozzles 61A, 61B, and 61C.
  • the ring 62 protrudes upward from the periphery of the upper surface of the head 61, and is configured to store DIW inside.
  • the ring 62 includes an inclined portion 62a that is inclined outward in the radial direction of the substrate W as it goes vertically upward from the periphery of the upper surface of the head 61, and a vertical portion 62b that extends directly below from the upper end of the inclined portion 62a.
  • the ring 62 acts as a dam, causing the DIW to overflow beyond the ring 62 and into the space surrounded by the upper surface of the head 61 and the ring 62.
  • DIW can be stored.
  • particles or droplets of the chemical solution attached to the upper surface of the head 61 can be dissolved in the DIW and flowed out of the ring 62, thereby cleaning the upper surface of the head 61.
  • the upper surface of the head 61 can be dried by sucking the DIW (which has sufficient cleanliness) stored above the head 61 into the nozzle 61B (suck back operation). can.
  • This method of cleaning the head 61 can be executed together with the "recipe for cleaning the head 61 of the nozzle unit 60" described later, or instead of the "recipe for cleaning the head 61 of the nozzle unit 60" described later. It can also be executed.
  • the head 61 is placed inside the ring-shaped gutter 63.
  • the gutter 63 can collect DIW overflowing from the ring 62.
  • the gutter 63 includes an inner wall 63a surrounding the head 61, an outer wall 63b disposed outside the inner wall 63a, a groove 63c formed between the inner wall 63a and the outer wall 63b, and a bottom wall 63d forming the bottom of the groove 63c. and, including.
  • the lower end of the vertical portion 62b of the ring 62 is inserted into the groove 63c of the gutter 63.
  • the DIW flowing down along the vertical portion 62b is temporarily stored in the groove 63c of the gutter 63, and overflows from the outer wall 63b of the gutter 63 to the outside.
  • N2 gas is supplied to the gap.
  • the nozzle unit 60 shown in FIG. 3 includes a ring 62 and a gutter 63, the nozzle unit 60 is not limited to this. good.
  • each nozzle (41, 61A, 61B, 61C) has a processing fluid supply line connected to a supply source (factory power supply, tank, etc.) of processing fluid (processing liquid or processing gas), and Necessary processing fluid is supplied through a processing fluid supply mechanism that includes a flow control device (including a flow meter, a flow control valve, an on-off valve, etc.) and the like that is interposed in the fluid supply line.
  • a plurality of processing fluid supply mechanisms are connected to one nozzle, and a plurality of types of processing fluids are supplied from the one nozzle selectively or simultaneously.
  • the processing liquid supplied from the nozzle 41 to the surface of the rotating wafer W collides with the surface of the wafer W (if the liquid is simultaneously supplied to the surface of the wafer W from two or more nozzles, the liquids collide with each other). ), or by being shaken off from the wafer W by centrifugal force, it becomes minute droplets and scatters. These scattered droplets may adhere to device components facing the space inside the chamber 20, such as the inner wall surface of the chamber 20.
  • a mist guard 80 is provided on the outside of the collection cup 50 in order to prevent, or at least significantly suppress, the scattered processing liquid from adhering to the device components such as the inner wall surface of the chamber 20 .
  • the mist guard 80 extends from the upper end of the outer cylindrical portion 81 toward the inner side (in the radial direction) of the outer cylindrical portion 81 and projects above the exhaust cup 51. It has a projecting portion 82.
  • the mist guard 80 is moved to an upper limit position (the position shown in FIG. 2) and a lower limit position (the overhanging part 82 of the mist guard 80 is close to the overhanging part 512 of the exhaust cup 51) by a lifting mechanism (for example, an air cylinder) (not shown). It can be raised and lowered between the two positions. The mist guard 80 can also be stopped at an intermediate position between the upper limit position and the lower limit position.
  • a lifting mechanism for example, an air cylinder
  • the mist guard 80 When the mist guard 80 is at the upper limit position, the processing liquid scattered from the wafer W can be captured best. When the mist guard 80 is at the intermediate position, the nozzle 41 can be moved to an arbitrary position without being obstructed by the mist guard 80 while capturing some of the processing liquid scattered from the wafer W. When the mist guard 80 is at the lower limit position, the airflow from the space above the wafer W to the exhaust port (not shown) at the peripheral edge of the chamber 20 is not obstructed. Taking the above points into consideration, the position of the mist guard 80 is determined depending on the process being performed on the wafer W.
  • the mist guard 80 is set to the upper limit position when a process in which a large amount of liquid is scattered is performed, and the mist guard 80 is set to the lower limit position when a process in which little liquid is scattered (for example, a drying process) is performed. .
  • a cylindrical guard pocket 90 for accommodating the outer cylindrical portion 81 of the mist guard 80 is provided on the outside of the outer cylindrical portion 511 of the exhaust cup 51.
  • a plurality of discharge ports 91 are provided at the bottom of the guard pocket 90 at intervals in the circumferential direction.
  • An exhaust pipe 92 is connected to the exhaust port 91, and this exhaust pipe is connected to a factory exhaust duct in a reduced pressure atmosphere.
  • a mist trap 93 is interposed in the discharge pipe 92, and liquid droplets flowing through the discharge pipe 92 are separated by the mist trap 93 and discharged to the factory waste liquid system.
  • the collection cup 50 and the mist guard 80 are both members that receive droplets (mist) scattered from the wafer W, it can be said that the collection cup 50 and the mist guard 80 constitute a liquid receiving cup.
  • the mist guard 80 can be considered as the outermost cup-shaped element of a liquid receiving cup (recovery cup 50) composed of a plurality of cup-shaped elements.
  • the liquid processing performed on the wafer W in the processing unit having the above configuration includes, for example, the following steps.
  • Step 1) A chemical treatment step of wet etching or cleaning the wafer W with a chemical solution
  • Step 2) A rinsing step of washing away the chemical solution with a rinsing solution (e.g. DIW),
  • Step 3) a two-fluid cleaning step
  • Step 4) IPA
  • Step 5 Shake-off drying step.
  • the process performed on the front surface of the wafer W and the process performed on the back surface of the wafer W may be the same or different.
  • a processing liquid for example, a chemical solution
  • the processing liquid supplied to the wafer W becomes a mist due to centrifugal force, and the wafer W is It scatters outward, and a part of it is caught by the mist guard 80.
  • the other part of the scattered processing liquid collides with the protrusion 512 of the exhaust cup 51.
  • the scattered processing liquid collides with the surfaces of members around the wafer W, such as the mist guard 80. In many cases, a portion of the processing liquid that impinges on the surface of these members remains on the surface of the member.
  • the processing liquid supplied from the nozzle 61A or 61B to the back surface (lower surface) of the wafer W which is being held and rotated by the substrate holding unit 31 the processing liquid supplied to the wafer W becomes mist due to centrifugal force, and the wafer W is It scatters outward and is caught by the collection cup 50.
  • the processing liquid supplied to the lower surface of the wafer W scatters in the form of droplets at the moment it collides with the wafer W, for example, and adheres to the head 61 of the nozzle unit 60 or the base plate 31a of the substrate holder 31.
  • a cleaning process is performed to remove droplets attached to the head 61 using DIW supplied from the nozzle 61B. Is possible. However, if such a cleaning process is performed every time, there is a problem that the throughput of the processing unit 16 decreases.
  • the present embodiment uses a monitoring camera 70 to monitor deposits such as droplets (including solid matter produced by drying of droplets), and according to the monitoring results,
  • the present invention has a configuration that enables the removal of deposits at any time. This will be explained below.
  • the processing unit 16 has at least one, for example, about five cameras 70 for monitoring.
  • one camera 70 is disposed at the center of the lower surface of the ceiling of the chamber 20 (for example, the lower surface of the discharge section of the FFU), and four cameras are disposed at the periphery of the lower surface of the ceiling.
  • An example of the angle of view of the camera 70 is depicted by a dashed line in FIGS. 2, 3A, and 3B.
  • the angle of view and arrangement of each camera 70 are set so that a blind spot (an area that cannot be imaged by any camera 70) does not occur.
  • the arrangement of the camera 70 is not limited to what is illustrated.
  • the image data analysis section is composed of hardware consisting of a computer such as the control device 4 described above or its subordinate computer, and a computer program (software) for image data analysis.
  • region A corresponds to the head 61 of the nozzle unit 60.
  • Region B corresponds to the ring 62 of the nozzle unit 60.
  • regions C1 to C3 correspond to the upper surface of the base plate 31a of the substrate holding section 31.
  • the regions C1 to C3 are sub-regions obtained by dividing the ring-shaped region on the upper surface of the base plate 31a into three in the circumferential direction.
  • Region D corresponds to the upper surface of the projecting portion 82 of the mist guard 80.
  • the method of dividing the image is not limited to the example shown in FIG. 4.
  • the boundaries for image division can be set, for example, by the operator of the substrate processing system 1 using a user interface (for example, a display formed as a touch panel) at an appropriate timing such as when starting up the substrate processing system 1. It is possible. Image division and image analysis can be performed for each image acquired by each surveillance camera 70.
  • the image analysis device analyzes the image data (divided image data) of each area (A, B, C1, C2, C3, D).
  • the method of image data analysis will be explained.
  • a Gray value (hereinafter referred to as a "reference Gray value”) is obtained for each of a plurality of pixels included in each region, and is stored in a memory (storage unit).
  • reference Gray values for each of the R component, G component, and B component of each pixel data are stored.
  • a Gray value (this will be referred to as a "detected Gray value”) is similarly obtained for each pixel.
  • the inspection can be performed, for example, immediately after the processing of one wafer W is completed and the wafer W is removed from the substrate holder 31.
  • the judgment criterion is ⁇ Whether or not the number of plots protruding from the normal area (see Figure 7A) of ⁇
  • the distribution density of pixels that do not satisfy the above inequality and the distribution form of pixels that do not satisfy the above inequality are set under predetermined conditions.
  • Whether or not there is a deposit in the inspection target area may be determined based on the coefficient of determination R 2 used in regression analysis or the root mean square error RMSE.
  • the reference Gray value at the same pixel is regarded as the predicted value used in regression analysis
  • the detected Gray value is regarded as the observed value used in regression analysis
  • the coefficient of determination R2 or root mean square error RMSE is calculated, and at least Either one may be used to determine whether there is a deposit in the area to be inspected.
  • R 2 if R 2 >0.96, there is no problem, and if R 2 ⁇ 0.96, it can be determined that there is a problem level of deposits (e.g., droplets) in the inspection target area. .
  • the root mean square error RMSE increases as the distribution of detected Gray values moves away from the distribution of reference Gray values. For example, if RMSE ⁇ 5, it can be determined that there is no problem, and if RMSE>5, it can be determined that there is a problematic level of deposits (for example, droplets) in the area to be inspected.
  • this inspection method it is possible to make a quick judgment. You can make decisions with ease. For example, if there are droplets in a region (for example, region A) where the presence of residual droplets is likely to have a negative effect on the processing of the next wafer W, the loading of the next wafer W is stopped and the droplets are removed. A droplet removal process may also be performed.
  • each processing unit 16 starts processing the wafer W in the substrate processing system 1 according to a predetermined processing schedule (START).
  • a predetermined processing schedule (START)
  • an inspection for deposits is performed according to the above-described procedure (step S1).
  • images of each area are acquired by the camera 70.
  • step S2 based on the image acquired by the camera 70, it is determined whether or not there is a problem with deposits in each area (A, B, C1, C2, C3, D). This determination is made based on images from all cameras 70. This is because, depending on the direction of the optical axis of the objective lens of the surveillance camera 70, the droplet may be hidden in the shadow of the member and cannot be photographed. Note that when allocating some of the surveillance cameras 70 to a specific use, it is not always necessary to make a determination based on images of all surveillance cameras 70.
  • step S3 If there is no problem with deposits (NO in step S2), the unprocessed wafer W is carried into the processing unit 16 and held by the substrate holding section 31. Then, a series of liquid treatment steps are performed on the wafer W (step S3).
  • the processed wafer W is carried out from the processing unit 16, and then the above-mentioned inspection is performed again. That is, an image of each area (A, B, C1, C2, C3, D) is acquired by the surveillance camera 70 (step S4), and based on this, an image of each area (A, B, C1, C2, C3, D) is acquired. ), it is determined whether or not there is a problem with deposits based on the above-mentioned criteria (step S5).
  • step S5 If there is no problem (NO in step S5), the next wafer W is carried into the processing unit 16 according to a predetermined processing schedule, and a series of liquid processing steps are performed on the next wafer W (step Return to S3).
  • step S6 If there is a problem in the determination in step S2 (YES in step S2) or if there is a problem in the determination in step S5 (YES in step S5), the flow advances to step S6.
  • step S6 it is determined whether a problem has occurred in a plurality of regions among the plurality of inspection target regions (A, B, C1, C2, C3, D).
  • step S7 it is determined whether a cleaning recipe that can clean that area exists. If such a cleaning recipe exists (YES in step S7), the cleaning recipe is executed to perform a cleaning process to clean the target area, and then a drying process to dry the inside of the processing unit 16 is also executed. (Step 8).
  • Step S9 it is determined whether there is a cleaning recipe (one cleaning recipe) that can clean all of the multiple areas. That is, for example, if there is a problem in area A and area B, it is determined whether there is one cleaning recipe that can clean area A and area B at the same time. If such a cleaning recipe exists (YES in step S9), the cleaning recipe is activated, a cleaning process for cleaning the target area is executed, and then a drying process for drying the inside of the processing unit 16 is also executed. (Step 8). The cleaning process and drying process are also collectively called normalization process.
  • step S10 If there is no single cleaning recipe that can clean all of the multiple problematic areas (NO in step S9), two or more cleaning recipes that can clean all of the multiple problematic areas. It is determined whether the combination exists (step S10). That is, for example, if there is a problem in area A and area D, it is determined whether there is a recipe for area A cleaning and a recipe for area D cleaning. If such a plurality of cleaning recipes exist (YES in step S10), the plurality of cleaning recipes are sequentially activated, a cleaning process for cleaning the target area is executed, and then the inside of the processing unit 16 is dried. A drying process is also performed (step 8).
  • step S7 If the determination result in step S7 is NO, or if the determination result in step S10 is NO (that is, such a cleaning recipe does not exist), an alarm is generated to notify the operator that a problem has occurred (Ste S11). In this case, the operator or another worker performs maintenance and cleaning of the processing unit 16. During that time, the processing unit 16 becomes unusable, so the control device 4 further performs one of the following processes.
  • Processing 1 The transport and processing schedule of the wafer W in the substrate processing system 1 is automatically changed, and the wafer W that was scheduled to be delivered to the processing unit 16 that has been determined to have an abnormality is transferred to another substrate processing apparatus. Processing to change the delivery destination. In this case, the processing unit 16 to which the plurality of wafers W to be processed thereafter are delivered may be automatically changed in sequence.
  • Processcess 2 A recovery process in which processing of a wafer W that was scheduled to be carried into the substrate processing apparatus determined to be abnormal is stopped and recovered.
  • droplets or particles derived from the chemical solution may adhere to the upper surface of the head 61. If the droplets are left as they are, for example, when the next wafer W is being processed, there is a risk that they will be blown up by the N2 gas discharged from the nozzle 61C at a relatively large flow rate and contaminate the back surface of the wafer W. There is.
  • particles derived from the chemical liquid are particles that are peeled off or dissolved by the liquid (chemical liquid or DIW) supplied to the back surface of the wafer W while processing the next wafer W, and are discharged from the nozzle 61C at a relatively large flow rate. There is a risk that the N 2 gas may be blown up and contaminate the back surface of the wafer W.
  • a cleaning recipe for the head 61 of the nozzle unit 60 is executed.
  • the space between the head 61 and the gutter 63 and the nozzle 61C are filled with N 2 gas at a small flow rate that can prevent the cleaning liquid (here, DIW) from entering.
  • the mist guard 80 is placed in the raised position, and the exhaust and liquid are drained from the discharge port of the guard pocket 90.
  • the recovery cup 50 is evacuated and liquid is drained in the same manner as in normal liquid processing. Then, the substrate holder 31 is rotated at a predetermined speed. The above state is maintained until the end of the cleaning recipe.
  • the DIW supply nozzle 41 (hereinafter also referred to as "DIW nozzle 41" for simplicity) is positioned above the head 61 and the DIW is directed toward the head 61. Discharge. At this time, DIW is supplied from the DIW nozzle 41 to the head 61 while changing the position of the DIW nozzle 41 so that the point at which the DIW lands on the head 61 changes. Thereby, foreign matter (contaminants such as liquid and particles) adhering to the head 61 can be removed. Thereafter, the DIW nozzle 41 is returned to the home position (standby position outside the collection cup 50).
  • a nozzle 41 for supplying N 2 gas (hereinafter also referred to as "N 2 nozzle 41" for convenience) is positioned above the head 61 and directed toward the head 61. Inject N2 gas.
  • N2 nozzle 41 is supplied to the head 61.
  • the N2 nozzle 41 is continuously moved to a position corresponding to the outer peripheral edge of the base plate 31a of the substrate holding section 31. Thereby, the head 61 is dried, and the upper surface of the base plate 31a located outside the head 61 can also be dried. Thereafter, the N2 nozzle 41 is returned to the home position (standby position outside the recovery cup 50). With the above steps, the cleaning recipe for the head 61 is completed.
  • a recipe for cleaning the top surface of the base plate 31a is executed.
  • the space between the head 61 and the gutter 63 and the nozzle 61C are filled with N 2 gas at a small flow rate that can prevent the cleaning liquid (here, DIW) from entering. is supplied. It is not necessary to supply this N 2 gas if only the vicinity of the periphery of the base plate 31a is to be cleaned.
  • the mist guard 80 is placed in the raised position, and exhaust and liquid are discharged from the discharge port of the guard pocket 90.
  • the recovery cup 50 is evacuated and liquid is drained in the same manner as in normal liquid processing. Then, the substrate holder 31 is rotated at a predetermined speed. The above state is maintained until the end of the cleaning recipe.
  • the DIW nozzle 41 is positioned near the outer peripheral edge of the gutter 63, and DIW is discharged toward the vicinity of the contact portion between the gutter 63 and the base plate 31a. Then, DIW is supplied from the DIW nozzle 41 to the upper surface of the base plate 31a while moving the DIW nozzle 41 so that the landing point of the DIW gradually approaches the outer peripheral edge of the base plate 31a. Thereby, foreign matter (contaminants such as liquid and particles) adhering to the base plate 31a can be removed. Thereafter, the DIW nozzle 41 is returned to the home position (standby position outside the collection cup 50).
  • DIW is supplied only to an area radially outward from a position slightly inside in the radial direction from the position where the foreign object is present. It doesn't matter if you do it like this.
  • a nozzle 41 for supplying N 2 gas (hereinafter also referred to as "N 2 nozzle 41" for convenience) is positioned above the base plate 31a, and N 2 gas is injected toward the base plate 31a.
  • N2 gas is supplied from the N2 nozzle 41 to the base plate 31a while moving the N2 nozzle 41 so that the point of collision of the N2 gas with the base plate 31a gradually approaches the outer peripheral edge of the base plate 31a. Thereby, the base plate 31a can be dried.
  • the N2 nozzle 41 is returned to the home position (standby position outside the collection cup 50). With the above steps, the cleaning recipe for the base plate 31a is completed.
  • FIGS. 9A and 9B The positions of the DIW and N2 nozzles during execution of the cleaning recipe on the top surface of the base plate 31a are shown in dashed lines in FIGS. 9A and 9B.
  • ⁇ Cleaning recipe for Mist Guard 80 If it is determined that there is a problem with the inner surface of the mist guard 80 (for example, there is adhesion of solid matter derived from a chemical solution) through an inspection by the surveillance camera 70, a cleaning recipe for the mist guard 80 is executed. First, the mist guard 80 is placed in the raised position, and the exhaust and liquid are drained from the discharge port of the guard pocket 90. In addition, the recovery cup 50 is evacuated and liquid is drained in the same manner as in normal liquid processing. Then, the substrate holder 31 is rotated at a predetermined speed. The above state is maintained until the end of the cleaning recipe.
  • the DIW nozzle 41 is positioned as shown in FIG. 10, and the DIW discharged from the DIW nozzle 41 is caused to collide with the upper surface of the rotating first rotary cup 53 and its vicinity.
  • the DIW that has collided with the surface of the first rotary cup 53 is scattered toward the inner surface of the mist guard 80, as shown in FIG.
  • the upper surface of the projecting portion 512 of the exhaust cup 51 can also be cleaned.
  • drying is performed while rotating the substrate holder 31.
  • the mist guard 80 is placed in the raised position, and then the DIW nozzle 41 is returned to the home position. With the above steps, the cleaning recipe for the mist guard 80 is completed.
  • the substrate is not limited to a semiconductor wafer, and may be any other type of substrate used in the manufacture of semiconductor devices, such as a glass substrate or a ceramic substrate.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Appareil de traitement de substrat, comprenant : une unité de support de substrat qui supporte et fait tourner un substrat, l'unité de support de substrat étant pourvue d'une plaque qui fait face à une surface inférieure du substrat, un espace se trouvant entre la plaque et la surface inférieure du substrat, et d'un support disposé sur la plaque pour supporter directement le substrat ; une buse supérieure et une buse inférieure qui fournissent un liquide de traitement au substrat ; une coupelle de réception de liquide ; et une unité de commande qui comprend une unité de détermination qui détermine, sur la base de données d'image acquises à partir d'une capture d'image qui capture une image comprenant la buse inférieure et/ou la plaque et/ou la coupelle de réception de liquide, s'il existe une anomalie dans une région de capture d'image. L'unité de détermination compare, en ce qui concerne chaque élément d'une pluralité d'éléments de données d'image divisée obtenus par division de l'image en une pluralité de régions, des données d'échelle de gris dans des données d'image divisée d'un état normal qui est préparé à l'avance, avec des données d'échelle de gris dans les données d'image divisée pour la détermination qui ont été capturées, et détermine qu'il y a une anomalie si la différence entre les images dépasse une référence prédéterminée.
PCT/JP2023/011103 2022-03-29 2023-03-22 Appareil de traitement de substrat, son procédé d'inspection et système de traitement de substrat WO2023189894A1 (fr)

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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156362A (ja) * 1998-11-19 2000-06-06 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
JP2007149892A (ja) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2013110270A (ja) * 2011-11-21 2013-06-06 Tokyo Electron Ltd 基板処理装置及び基板処理方法並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP2015035474A (ja) * 2013-08-08 2015-02-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2015046461A (ja) * 2013-08-28 2015-03-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、洗浄用治具、洗浄用治具セット、および洗浄方法
JP2015118646A (ja) * 2013-12-20 2015-06-25 キヤノン株式会社 画像処理方法、画像処理プログラムおよび画像処理装置
JP2018037448A (ja) * 2016-08-29 2018-03-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置およびノズル洗浄方法
JP2018056223A (ja) * 2016-09-27 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2019102784A (ja) * 2017-12-05 2019-06-24 株式会社Ｓｃｒｅｅｎホールディングス ヒューム判定方法、基板処理方法、および基板処理装置
JP2019125634A (ja) * 2018-01-15 2019-07-25 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
WO2019229900A1 (fr) * 2018-05-30 2019-12-05 株式会社島津製作所 Dispositif de traitement de données d'imagerie
WO2021029274A1 (fr) * 2019-08-13 2021-02-18 東京エレクトロン株式会社 Appareil de traitement de substrat, procédé d'inspection de buse et support d'enregistrement
JP2021190511A (ja) * 2020-05-27 2021-12-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156362A (ja) * 1998-11-19 2000-06-06 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
JP2007149892A (ja) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2013110270A (ja) * 2011-11-21 2013-06-06 Tokyo Electron Ltd 基板処理装置及び基板処理方法並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP2015035474A (ja) * 2013-08-08 2015-02-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2015046461A (ja) * 2013-08-28 2015-03-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、洗浄用治具、洗浄用治具セット、および洗浄方法
JP2015118646A (ja) * 2013-12-20 2015-06-25 キヤノン株式会社 画像処理方法、画像処理プログラムおよび画像処理装置
JP2018037448A (ja) * 2016-08-29 2018-03-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置およびノズル洗浄方法
JP2018056223A (ja) * 2016-09-27 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2019102784A (ja) * 2017-12-05 2019-06-24 株式会社Ｓｃｒｅｅｎホールディングス ヒューム判定方法、基板処理方法、および基板処理装置
JP2019125634A (ja) * 2018-01-15 2019-07-25 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
WO2019229900A1 (fr) * 2018-05-30 2019-12-05 株式会社島津製作所 Dispositif de traitement de données d'imagerie
WO2021029274A1 (fr) * 2019-08-13 2021-02-18 東京エレクトロン株式会社 Appareil de traitement de substrat, procédé d'inspection de buse et support d'enregistrement
JP2021190511A (ja) * 2020-05-27 2021-12-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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