WO2023042261A1 - エキスパンド装置およびエキスパンド方法 - Google Patents

エキスパンド装置およびエキスパンド方法 Download PDF

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Publication number
WO2023042261A1
WO2023042261A1 PCT/JP2021/033739 JP2021033739W WO2023042261A1 WO 2023042261 A1 WO2023042261 A1 WO 2023042261A1 JP 2021033739 W JP2021033739 W JP 2021033739W WO 2023042261 A1 WO2023042261 A1 WO 2023042261A1
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WO
WIPO (PCT)
Prior art keywords
sheet member
wafer
ring
expanding
section
Prior art date
Application number
PCT/JP2021/033739
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
芳邦 鈴木
Original Assignee
ヤマハ発動機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヤマハ発動機株式会社 filed Critical ヤマハ発動機株式会社
Priority to PCT/JP2021/033739 priority Critical patent/WO2023042261A1/ja
Priority to CN202180101113.9A priority patent/CN117716470A/zh
Priority to JP2023547968A priority patent/JPWO2023042261A1/ja
Priority to KR1020247001665A priority patent/KR20240021304A/ko
Priority to TW111104884A priority patent/TWI824409B/zh
Publication of WO2023042261A1 publication Critical patent/WO2023042261A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Definitions

  • the present invention relates to an expanding device and an expanding method, and more particularly to an expanding device and an expanding method having an ultraviolet irradiation section that reduces the adhesive force of a sheet member to which a wafer is attached.
  • an ultraviolet irradiation unit that reduces the adhesive force of the sheet member to which the wafer is attached, and a heat-shrinkable heat-shrinkable wafer that can be divided along the dividing line is attached. and an expanding section for expanding the sheet member and dividing the wafer along the dividing line.
  • the ultraviolet irradiation section irradiates the sheet member with ultraviolet rays to reduce the adhesion of the sheet member, and then the expanding section expands the sheet member.
  • JP-A-2018-050010 it is necessary to heat and shrink the slack of the portion of the sheet member around the wafer caused by the expansion by the expanding unit.
  • a heat shrink portion is provided for heating and shrinking the sheet member.
  • the ultraviolet irradiation unit irradiates the sheet member with ultraviolet rays to reduce the adhesive force of the sheet member, and then the sheet member is expanded by the expanding unit. After the member is expanded, the sheet member is heated by the heat shrink section to shrink the slack of the portion of the sheet member around the wafer. Therefore, it is necessary to sequentially perform the step of irradiating the sheet member with ultraviolet rays, the step of expanding the sheet member, and the step of heating and contracting the sheet member, making it difficult to suppress an increase in processing time. is. Therefore, it is desired to suppress an increase in the processing time for expanding, heat-shrinking, and reducing the adhesive force of the sheet member to which the wafer is attached.
  • the present invention has been made to solve the above problems, and one object of the present invention is to reduce the expansion, heat shrinkage, and adhesive force of a sheet member to which a wafer is attached. To provide an expanding device and an expanding method capable of suppressing an increase in .
  • An expanding device expands a heat-shrinkable sheet member having elasticity to which a dividable wafer is attached along a dividing line, and divides the wafer along the dividing line.
  • a heat shrink unit that heats and shrinks slack in the portion of the sheet member around the wafer caused by the expansion by the expanding unit; and when the sheet member is heated by the heat shrink unit, the sheet member and an ultraviolet irradiating part that irradiates ultraviolet rays to reduce the adhesive force of the sheet member.
  • the sheet member when the sheet member is heated by the heat shrink portion, the sheet member is simultaneously irradiated with ultraviolet rays to reduce the adhesion of the sheet member.
  • the adhesive force of the sheet member can be reduced by the ultraviolet irradiation section while the slack of the sheet member around the wafer is heated and shrunk by the heat shrink section.
  • the processing time can be reduced as compared with the case where the contraction processing of the sheet member by the heat shrink portion and the processing for reducing the adhesive strength of the sheet member by the ultraviolet irradiation portion are performed in order.
  • the expanding device preferably further includes an ultraviolet shielding section disposed so as to cover one side of the sheet member and shielding ultraviolet rays emitted from the ultraviolet irradiation section, wherein the ultraviolet irradiation section covers the sheet member. from the other side of the sheet member. According to this structure, it is possible to suppress the leakage of the ultraviolet rays irradiated from the ultraviolet irradiation section to the outside by the ultraviolet shielding section.
  • the ultraviolet shielding part preferably includes a side surface portion formed annularly so as to surround the wafer of the sheet member, and a bottom surface portion connected to the side surface portion opposite to the sheet member.
  • the sheet member when the sheet member is irradiated with ultraviolet rays by the ultraviolet irradiation section, the sheet member is in contact with the other side of the sheet member to support the sheet member and surround the ultraviolet irradiation section. and a support ring formed of a material that blocks ultraviolet light.
  • the support ring that supports the sheet member can shield the ultraviolet rays emitted from the ultraviolet irradiation section to the surroundings. Therefore, the member that supports the sheet member and the member that shields the ultraviolet rays are provided separately. Compared to the case, the number of parts can be reduced, and the device configuration can be simplified.
  • the ultraviolet shielding portion and the support ring hold the sheet member so as to sandwich the sheet member when the sheet member is irradiated with ultraviolet rays by the ultraviolet irradiation portion and when the sheet member is shrunk by the heat shrink portion in parallel.
  • the expansion of the sheet member at the portion where the wafer is placed is maintained.
  • the expansion of the sheet member at the portion where the wafer is placed can be maintained by the ultraviolet shielding portion that shields the ultraviolet rays irradiated by the ultraviolet irradiation portion when the sheet member is shrunk by the heat shrink portion. Therefore, the number of parts can be reduced and the configuration of the device can be simplified as compared with the case where a member for maintaining the expansion of the seat member is separately provided.
  • the ultraviolet irradiation section is preferably configured to be movable between an ultraviolet irradiation position and a retracted position arranged along a direction intersecting the surface of the sheet member.
  • the ultraviolet irradiation section performs ultraviolet irradiation treatment for reducing the adhesive force of the sheet member within a working time for heating and shrinking the sheet member by the heat shrink section.
  • the intensity of the irradiated ultraviolet light is adjusted so that it ends.
  • An expanding method includes expanding a heat-shrinkable sheet member having a dividable wafer attached along a dividing line and having elasticity, dividing the wafer along the dividing line, After that, the slack of the sheet member around the wafer caused by the expansion of the sheet member is shrunk by heating, and when the sheet member is shrunk by heating, the sheet member is irradiated with ultraviolet rays in parallel. , to reduce the adhesive force of the sheet member.
  • the sheet member when the sheet member is heated and shrunk, the sheet member is simultaneously irradiated with ultraviolet rays to reduce the adhesion of the sheet member.
  • the adhesive force of the sheet member can be reduced by irradiating the ultraviolet rays while the slack of the sheet member around the wafer is heated and contracted.
  • the processing time can be reduced as compared with the case where the contraction treatment of the sheet member and the treatment for reducing the adhesive force of the sheet member by irradiation with ultraviolet rays are performed in order.
  • FIG. 1 is a plan view of an expanding device according to one embodiment
  • FIG. 1 is a side view of an expanding device according to one embodiment
  • FIG. FIG. 4 is a plan view of a wafer ring structure of an expanding device according to one embodiment
  • 4 is a cross-sectional view taken along line 101-101 of FIG. 3
  • FIG. FIG. 4 is a bottom view of a debris cleaner of an expanding device according to one embodiment
  • FIG. 4 is a bottom view of the heat shrink portion of the expanding device according to one embodiment
  • 4 is a block diagram showing a control configuration of an expanding device according to one embodiment
  • FIG. 4 is a flow chart showing semiconductor chip manufacturing processing of the expanding device according to one embodiment.
  • FIG. 4 is a side view showing a state in which the sheet member of the expanding device according to one embodiment is expanded.
  • FIG. 10 is a side view of the wafer ring structure, debris cleaner, and expanding ring of the expanding device according to one embodiment;
  • FIG. 4 is a side view showing a state before the sheet member of the expanding device according to one embodiment is heat-shrinked;
  • FIG. 4 is a side view showing a state in which the sheet member of the expanding device according to the embodiment is heat-shrinked.
  • FIG. 4 is a flow chart showing extraction processing of the expanding device according to one embodiment.
  • 4 is a flow chart showing transfer processing of the expanding device according to one embodiment.
  • 4 is a flow chart showing the expanding process of the expanding device according to one embodiment.
  • FIG. 18 is a flow chart following the flow chart of FIG. 17;
  • FIG. 4 is a flow chart showing a heat shrink process of an expanding device according to one embodiment.
  • FIG. 20 is a flow chart following the flow chart of FIG. 19;
  • FIG. 4 is a flow chart showing processing for accommodating an expanding device according to one embodiment.
  • FIG. 1 The configuration of an expanding device 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 21.
  • FIG. 1 The configuration of an expanding device 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 21.
  • expanding apparatus 100 is configured to divide wafer 210 to form a plurality of semiconductor chips. Further, the expanding device 100 is configured to form sufficient gaps between the plurality of semiconductor chips.
  • a modified layer is formed in advance on the wafer 210 by irradiating the wafer 210 with a laser beam having a wavelength that is transmissive to the wafer 210 along the division lines (street).
  • the modified layer refers to cracks, voids, etc. formed inside the wafer 210 by the laser.
  • stealth dicing A method of forming a modified layer on the wafer 210 in this manner is called stealth dicing.
  • the expanding device 100 by expanding the sheet member 220, the wafer 210 is divided along the modified layer. Further, by expanding the sheet member 220 in the expanding device 100, the gaps between the plurality of semiconductor chips that are divided and formed are widened.
  • the expanding device 100 includes a base plate 1 , a cassette section 2 , a lift-up hand section 3 , a suction hand section 4 , a base 5 , an expanding section 6 , a cool air supply section 7 , a cooling unit 8 , and a fragment cleaner 9 . , a heat shrink portion 10 , and an ultraviolet irradiation portion 11 .
  • the horizontal direction in which the cassette portion 2 and the heat shrink portion 10 are arranged is the X direction
  • the cassette portion 2 side in the X direction is the X1 direction
  • the heat shrink portion 10 side in the X direction is the X2 direction.
  • the direction orthogonal to the X direction is the Y direction
  • the Y1 direction is the cassette portion 2 side of the Y directions
  • the Y2 direction is the opposite direction to the Y1 direction.
  • the vertical direction is the Z direction
  • the upward direction is the Z1 direction
  • the downward direction is the Z2 direction.
  • the base plate 1 is a base on which the cassette section 2 and the suction hand section 4 are installed.
  • the base plate 1 has a rectangular shape elongated in the Y direction in plan view.
  • the cassette section 2 is configured to accommodate a plurality (five) of wafer ring structures 200 .
  • the wafer ring structure 200 has a wafer 210, a sheet member 220, and a ring-shaped member 230, as shown in FIGS.
  • the wafer 210 is a circular thin plate made of a crystal of a semiconductor material that is used as a material for semiconductor integrated circuits. Inside the wafer 210, as described above, a modified layer is formed by modifying the inside along the dividing line. That is, the wafer 210 is configured to be split along the split lines.
  • the sheet member 220 is an elastic adhesive tape. An adhesive layer is provided on the upper surface 220a of the sheet member 220 .
  • the wafer 210 is attached to the adhesive layer of the sheet member 220 .
  • the ring-shaped member 230 is a ring-shaped metal frame in plan view. A notch 240 and a notch 250 are formed in the outer surface 230 a of the ring-shaped member 230 .
  • the ring-shaped member 230 is attached to the adhesive layer of the sheet member 220 while surrounding the wafer 210 .
  • the cassette section 2 includes a Z-direction moving mechanism 21, a wafer cassette 22, and a pair of mounting sections 23.
  • the Z-direction moving mechanism 21 is configured to move the wafer cassette 22 in the Z-direction using a motor 21a as a drive source.
  • the Z-direction moving mechanism 21 also has a mounting table 21b that supports the wafer cassette 22 from below.
  • the wafer cassette 22 is manually supplied and mounted on the mounting table 21b.
  • the wafer cassette 22 has an accommodation space capable of accommodating a plurality of wafer ring structures 200 .
  • a plurality of (five) pairs of mounting portions 23 are arranged inside the wafer cassette 22 .
  • a ring-shaped member 230 of the wafer ring structure 200 is mounted on the pair of mounting portions 23 from the Z1 direction side.
  • One of the pair of mounting portions 23 protrudes in the X2 direction from the inner surface of the wafer cassette 22 in the X1 direction.
  • the other of the pair of mounting portions 23 protrudes in the X1 direction from the inner surface of the wafer cassette 22 in the X2 direction.
  • the lift-up hand section 3 is configured to be able to take out the wafer ring structure 200 from the cassette section 2 . Further, the lift-up hand section 3 is configured so that the wafer ring structure 200 can be accommodated in the cassette section 2 .
  • the lift-up hand section 3 includes a Y-direction movement mechanism 31 and a lift-up hand 32 .
  • the Y-direction moving mechanism 31 is configured to move the lift-up hand 32 in the Y-direction using a motor 31a as a drive source.
  • the lift-up hand 32 is configured to support the ring-shaped member 230 of the wafer ring structure 200 from the Z2 direction side.
  • the suction hand unit 4 is configured to suction the ring-shaped member 230 of the wafer ring structure 200 from the Z1 direction side.
  • the suction hand unit 4 includes an X-direction movement mechanism 41 , a Z-direction movement mechanism 42 and a suction hand 43 .
  • the X-direction moving mechanism 41 is configured to move the suction hand 43 in the X direction using a motor 41a as a drive source.
  • the Z-direction moving mechanism 42 is configured to move the suction hand 43 in the Z-direction using a motor 42a as a drive source.
  • the suction hand 43 is configured to support the ring-shaped member 230 of the wafer ring structure 200 from the Z1 direction side.
  • the base 5 is a base on which the expanding section 6, the cooling unit 8 and the ultraviolet irradiation section 11 are installed.
  • the base 5 has a rectangular shape elongated in the Y direction in plan view.
  • the upper end surface of the base 5 on the Z1 direction side is arranged on the Z1 direction side of the upper end surface of the base plate 1 on the Z1 direction side.
  • the expanding section 6 is configured to expand the sheet member 220 of the wafer ring structure 200 to divide the wafer 210 along the dividing line.
  • the expanding section 6 includes a Z-direction moving mechanism 61 , a Y-direction moving mechanism 62 , a clamp section 63 and an expanding ring 64 .
  • the Z-direction moving mechanism 61 is configured to move the clamp portion 63 in the Z-direction using a motor 61a as a drive source.
  • the Y-direction moving mechanism 62 is configured to move the Z-direction moving mechanism 61, the clamp portion 63 and the expand ring 64 in the Y direction using a motor 62a as a drive source.
  • the expand ring 64 is an example of the "support ring" in the claims.
  • the clamp part 63 is configured to grip the ring-shaped member 230 of the wafer ring structure 200 .
  • the clamp portion 63 has a lower grip portion 63a and an upper grip portion 63b.
  • the lower grip portion 63a supports the ring-shaped member 230 from the Z2 direction side.
  • the upper gripping portion 63b presses the ring-shaped member 230 supported by the lower gripping portion 63a from the Z1 direction side.
  • the ring-shaped member 230 is gripped by the lower gripping portion 63a and the upper gripping portion 63b.
  • the expand ring 64 is configured to expand the sheet member 220 by supporting the sheet member 220 from the Z2 direction side.
  • the expand ring 64 has a ring shape in plan view.
  • the cool air supply unit 7 is configured to supply cold air to the sheet member 220 from the Z1 direction side when the sheet member 220 is expanded by the expanding unit 6 .
  • the cool air supply unit 7 has a plurality of nozzles 71 .
  • the nozzle 71 has a cool air supply port 71a (see FIG. 5) through which cool air supplied from a cool air supply source (not shown) flows out.
  • a nozzle 71 is attached to the debris cleaner 9 .
  • a cold source is a chiller for generating cold.
  • the cool air supply source supplies air cooled by, for example, a cooling device provided with a heat pump or the like. Such cold air supply is mounted on the base 5 .
  • a cool air supply source and each of the plurality of nozzles 71 are connected by a hose (not shown).
  • the cooling unit 8 is configured to cool the sheet member 220 from the Z2 direction side when the sheet member 220 is expanded by the expanding section 6 .
  • the cooling unit 8 includes a cooling member 81 having a cooling body 81 a and a Peltier element 81 b, and a cylinder 82 .
  • the cooling body 81a is made of a member having a large heat capacity and a high thermal conductivity.
  • the cooling body 81a is made of metal such as aluminum.
  • the Peltier element 81b is configured to cool the cooling body 81a. Note that the cooling body 81a is not limited to aluminum, and may be another member having a large heat capacity and a high thermal conductivity.
  • the cooling unit 8 is configured to be movable in the Z direction by means of a cylinder 82. Thereby, the cooling unit 8 can move to a position in contact with the sheet member 220 and a position away from the sheet member 220 .
  • the fragment cleaner 9 is configured to suck fragments of the wafer 210 and the like when the sheet member 220 is expanded by the expanding section 6 .
  • the fragment cleaner 9 includes a ring-shaped member 91 and a plurality of suction ports 92.
  • the ring-shaped member 91 is a member having a ring shape when viewed from the Z1 direction side.
  • the plurality of suction ports 92 are openings for sucking fragments of the wafer 210 and the like.
  • a plurality of suction ports 92 are formed on the lower surface of the ring-shaped member 91 on the Z2 direction side.
  • the debris cleaner 9 is configured to be movable in the Z direction by means of a cylinder (not shown). As a result, the fragment cleaner 9 can move to a position close to the wafer 210 and to a position where the suction hand 43 moving in the X direction can be avoided.
  • the heat shrink section 10 is configured to shrink the sheet member 220 expanded by the expanding section 6 by heating while maintaining the gaps between the plurality of semiconductor chips.
  • the heat shrink section 10 includes a Z-direction moving mechanism 110, a heating ring 111, an intake ring 112, and an expansion maintaining ring 113.
  • the Z-direction moving mechanism 110 is configured to move the heating ring 111 and the suction ring 112 in the Z direction using a motor 110a as a drive source.
  • the extension retaining ring 113 is an example of the "ultraviolet shielding part" in the claims.
  • the heating ring 111 has a ring shape in plan view.
  • the heating ring 111 also has a sheathed heater that heats the sheet member 220 .
  • the intake ring 112 is configured integrally with the heating ring 111 .
  • the intake ring 112 has a ring shape in plan view.
  • a plurality of intake ports 112a are formed in the lower surface of the intake ring 112 on the Z2 direction side.
  • the expansion maintaining ring 113 is configured to hold down the sheet member 220 from the Z1 direction side so that the sheet member 220 near the wafer 210 does not shrink due to heating by the heating ring 111 .
  • the expansion maintaining ring 113 has a ring shape in plan view.
  • the expansion retaining ring 113 is configured to be movable in the Z direction by a cylinder (not shown). This allows the expansion retaining ring 113 to move to a position holding the seat member 220 and a position away from the seat member 220 .
  • the ultraviolet irradiation unit 11 is configured to irradiate the sheet member 220 with ultraviolet rays in order to reduce the adhesive strength of the adhesive layer of the sheet member 220 .
  • the ultraviolet irradiation section 11 has an ultraviolet light.
  • the expanding device 100 includes a first control unit 12, a second control unit 13, a third control unit 14, a fourth control unit 15, a fifth control unit 16, an expansion control calculation A unit 17 , a handling control calculation unit 18 , and a storage unit 19 are provided.
  • the first control section 12 is configured to control the heat shrink section 10 .
  • the first control unit 12 includes a CPU (Central Processing Unit) and a storage unit having ROM (Read Only Memory) and RAM (Random Access Memory).
  • the first control unit 12 may include, as a storage unit, an HDD (Hard Disk Drive) that retains stored information even after the voltage is cut off. Also, the HDD may be provided in common to the first control section 12 , the second control section 13 , the third control section 14 , the fourth control section 15 and the fifth control section 16 .
  • an HDD Hard Disk Drive
  • the second control section 13 is configured to control the cool air supply section 7 , the cooling unit 8 and the debris cleaner 9 .
  • the second control unit 13 includes a CPU and a storage unit having ROM, RAM, and the like.
  • the third control section 14 is configured to control the expanding section 6 .
  • the third control unit 14 includes a CPU and a storage unit having ROM, RAM, and the like. Note that the second control unit 13 and the third control unit 14 may include, as a storage unit, an HDD or the like that retains stored information even after the voltage is cut off.
  • the fourth control section 15 is configured to control the cassette section 2 and the lift-up hand section 3.
  • the fourth control unit 15 includes a CPU and a storage unit having ROM, RAM, and the like.
  • the fifth control section 16 is configured to control the suction hand section 4 .
  • the fifth control unit 16 includes a CPU and a storage unit having ROM, RAM, and the like. Note that the fourth control unit 15 and the fifth control unit 16 may include, as a storage unit, an HDD or the like that retains stored information even after the voltage is cut off.
  • the expansion control calculation unit 17 is configured to perform calculations related to expansion processing of the sheet member 220 based on the processing results of the first control unit 12, the second control unit 13 and the third control unit 14.
  • the expansion control calculation unit 17 includes a CPU and a storage unit having ROM, RAM, and the like.
  • the handling control calculation unit 18 is configured to perform calculations related to the process of moving the wafer ring structure 200 based on the processing results of the fourth control unit 15 and the fifth control unit 16 .
  • the handling control calculation unit 18 includes a CPU and a storage unit having ROM, RAM, and the like.
  • a program for operating the expanding device 100 is stored in the storage unit 19 .
  • the storage unit 19 includes ROM, RAM, and the like.
  • step S1 the wafer ring structure 200 is taken out from the cassette section 2. That is, after the wafer ring structure 200 housed in the cassette section 2 is supported by the lift-up hand 32, the lift-up hand 32 is moved in the Y2 direction by the Y-direction moving mechanism 31, whereby the wafer ring structure 200 is removed from the cassette section 2. Structure 200 is retrieved.
  • step S ⁇ b>2 the wafer ring structure 200 is transferred to the expanding section 6 by the suction hand 43 . That is, the wafer ring structure 200 taken out from the cassette section 2 is moved in the X2 direction by the X-direction moving mechanism 41 while being sucked by the suction hand 43 . The wafer ring structure 200 that has moved in the X2 direction is transferred from the suction hand 43 to the clamp section 63 and then gripped by the clamp section 63 .
  • step S3 the sheet member 220 is expanded by the expanding section 6.
  • the sheet member 220 of the wafer ring structure 200 gripped by the clamp portion 63 is cooled by the cooling unit 8 .
  • the sheet member 220 is cooled by the cold air supply unit 7 .
  • the wafer ring structure 200 cooled to a predetermined temperature is lowered by the Z-direction moving mechanism 61 while being gripped by the clamp portion 63 .
  • the sheet member 220 is expanded by the expand ring 64 to divide the wafer 210 along the dividing line. At this time, the wafer 210 is divided while suctioning the fragments by the fragment cleaner 9 .
  • step S4 while maintaining the expanded state of the sheet member 220, the expanded portion 6 is moved to the Z2 direction side of the heat shrink portion 10. That is, after the wafer 210 is divided, the wafer ring structure 200 with the sheet member 220 expanded is moved in the Y1 direction by the Y-direction moving mechanism 62 .
  • step S5 the sheet member 220 is heated by the heat shrink section 10 to be shrunk.
  • the wafer ring structure 200 moved in the Y1 direction is heated by the heating ring 111 while being sandwiched between the expansion retaining ring 113 and the expand ring 64 .
  • suction by the suction ring 112 and irradiation of ultraviolet rays by the ultraviolet irradiation unit 11 are performed.
  • step S6 the expanding section 6 is returned to its original position. That is, the wafer ring structure 200 with the contracted sheet member 220 is moved in the Y2 direction by the Y-direction moving mechanism 31 .
  • step S ⁇ b>7 the wafer ring structure 200 is transferred from the expanding section 6 to the lift-up hand section 3 by the suction hand 43 , is moved in the X1 direction by the X-direction moving mechanism 41 , and is transferred to the lift-up hand 32 .
  • step S ⁇ b>8 the wafer ring structure 200 is accommodated in the cassette section 2 .
  • the wafer ring structure 200 supported by the lift-up hand 32 is moved in the Y1 direction by the Y-direction moving mechanism 31 , so that the wafer ring structure 200 is housed in the cassette section 2 .
  • the processing performed on one wafer ring structure 200 is completed.
  • composition related to expansion and heat shrink 1 and 9-14, the configuration for expansion and heat shrink will be described in detail.
  • the expanding section 6 is configured to expand a stretchable heat-shrinkable sheet member 220 at a first position P1.
  • the Y-direction moving mechanism 62 moves from the first position P1 to a second position P2, which is horizontally (Y1 direction) away from the first position P1 in plan view, in a state in which the sheet member 220 is expanded by the expanding section 6.
  • the Z-direction moving mechanism 61 of the expanding section 6, the clamping section 63 and the expanding ring 64 are configured to move in the horizontal direction (Y1 direction).
  • the heat shrink section 10 is configured to heat and shrink (heat shrink) the slack of the portion 220b of the sheet member 220 around the wafer 210 caused by the expansion by the expanding section 6 at the second position P2. It is
  • the expanding section 6 is configured such that when the sheet member 220 is expanded, the clamping section 63 grips the ring-shaped member 230 in the vertical direction (Z direction).
  • the upper gripping portion 63b of the clamping portion 63 is composed of a plurality (four) of slide moving bodies 63ba arranged so as to surround the wafer ring structure 200.
  • the plurality of slide moving bodies 63ba are configured to horizontally slide toward the wafer 210 side when gripping the ring-shaped member 230.
  • the lower gripping portion 63a of the clamping portion 63 rises in the Z1 direction toward the upper gripping portion 63b (plurality of sliding moving bodies 63ba) that slides toward the wafer 210 by the driving force of a cylinder such as an air cylinder. is configured to As a result, the ring-shaped member 230 is gripped and fixed between the upper gripping portion 63b and the lower gripping portion 63a of the clamp portion 63. As shown in FIG.
  • the clamp part 63 is moved toward the expand ring 64 by the driving force of the motor 61a of the Z-direction moving mechanism 61 while gripping the ring-shaped member 230 between the upper grip part 63b and the lower grip part 63a. It is configured to descend in the Z2 direction. As a result, the sheet member 220 is pressed against the expand ring 64 and the sheet member 220 is expanded.
  • the expand ring 64 is arranged on the Z2 direction side with respect to the sheet member 220 .
  • the expand ring 64 is arranged horizontally between the wafer 210 and the ring-shaped member 230 .
  • the expand ring 64 is formed in a circular ring so as to surround the wafer 210 .
  • the first position P1 which is the expanded position, on the Z1 direction side with respect to the wafer ring structure 200, there is a fragment cleaner 9 that sucks and removes scattered matter generated from the wafer ring structure 200 due to the expansion of the sheet member 220.
  • Scattered matter is, for example, fragments of wafer 210 or the like.
  • the die attach film may become a scattering object.
  • the fragments of the wafer 210 are small in the vicinity of the outer edge 210a (see FIG. 12) of the wafer 210, the position of the wafer 210 becomes unstable when the sheet member 220 is expanded, and the fragments are likely to be scattered.
  • the fragment cleaner 9 is configured to suck and remove the scattered matter by the negative pressure supplied from the negative pressure generator.
  • the suction port 92 of the debris cleaner 9 is arranged to face the outer edge 210a of the circular ring-shaped wafer 210 when the debris (such as wafer 210 fragments and die attach film fragments) is sucked. , is formed in a circular ring.
  • the circular ring-shaped suction port 92 is composed of a plurality of circular suction ports 92 arranged at predetermined intervals in a circular ring.
  • the debris cleaner 9 is configured to suck scattered matter away from the center of the wafer 210 by means of a circular suction port 92 .
  • the fragment cleaner 9 has a first position P1, which is an expanded position, by the driving force of a cylinder such as an air cylinder. It is configured to be movable in the vertical direction (Z direction) between the positions.
  • the lower position is the position near the wafer 210 .
  • the upper position is a retreat position where the suction hand 43 moving in the X direction can be avoided.
  • the fragment cleaner 9 is configured to descend in the Z2 direction from the upper position to the lower position when expanding the sheet member 220 . Further, the fragment cleaner 9 is configured to start the suction operation before pressing the sheet member 220 against the expand ring 64 and continue the suction operation at least until the pressing of the sheet member 220 against the expand ring 64 is completed. .
  • a cool air supply section 7 and a cooling unit 8 for cooling the sheet member 220 when the sheet member 220 is expanded by the expanding section 6 are arranged at the first position P1, which is the expanding position.
  • the cool air supply unit 7 is provided integrally with the fragment cleaner 9 on the Z1 direction side with respect to the wafer ring structure 200 . Therefore, at the first position P1, the cool air supply unit 7 moves vertically (in the Z direction) integrally with the fragment cleaner 9 between a lower position where cool air is supplied and an upper position where no cool air is supplied. configured as possible.
  • the cool air supply unit 7 is configured to descend in the Z2 direction from the upper position to the lower position when the sheet member 220 is expanded.
  • the cool air supply unit 7 is configured to start the cool air supply operation before pressing the sheet member 220 against the expand ring 64 and continue the cool air supply operation at least until the sheet member 220 is completely pressed against the expand ring 64. ing.
  • the cooling unit 8 is arranged on the Z2 direction side with respect to the wafer ring structure 200 . At the first position P1, the cooling unit 8 is moved vertically ( Z direction). The cooling unit 8 is configured to rise in the Z1 direction from the lower position to the upper position when the sheet member 220 is expanded. The cooling unit 8 is also configured to initiate and complete the cooling operation before pressing the sheet member 220 against the expand ring 64 . Also, the cooling unit 8 is configured to retract to the lower position before pressing the sheet member 220 against the expand ring 64 .
  • the Y-direction moving mechanism 62 maintains the expanded state of the sheet member 220 by the expanding section 6,
  • the expanding portion 6 (the Z-direction moving mechanism 61, the clamp portion 63 and the expanding ring 64) is moved in the Y1 direction from the first position P1 where the sheet member 220 is expanded to the second position P2 where the sheet member 220 is heat-shrinked. configured to move.
  • the Y-direction moving mechanism 62 moves independently of the fragment cleaner 9, the cool air supply unit 7 and the cooling unit 8 without moving the fragment cleaner 9, the cool air supply unit 7 and the cooling unit 8 from the first position P1.
  • the expanding portion 6 is moved in the Y1 direction from the first position P1 to the second position P2.
  • the fragment cleaner 9 and the cool air supply section 7 are retracted to the upper position, and the cooling unit 8 is retracted to the lower position.
  • the Y-direction moving mechanism 62 further has a mounting portion 62b and a rail portion 62c in addition to the motor 62a.
  • the mounting portion 62b is configured such that the Z-direction moving mechanism 61, the clamp portion 63 and the expand ring 64 are mounted on the upper surface thereof. Further, the mounting portion 62b is formed in a substantially rectangular plate shape in plan view.
  • the mounting portion 62b is movably provided on the rail portion 62c.
  • a pair of rail portions 62c are provided spaced apart in the X direction. The pair of rail portions 62c are provided to extend in the Y direction between the first position P1 and the second position P2.
  • the Y-direction moving mechanism 62 moves the mounting portion 62b in the Y direction along the pair of rail portions 62c by the driving force of the motor 62a, thereby moving the Z-direction moving mechanism 61, the clamp portion 63 and the expand ring 64. It is configured to be movable in the Y direction between the first position P1 and the second position P2.
  • the mounting portion 62b is provided with a hole portion 62ba passing through the mounting portion 62b in the vertical direction (Z direction).
  • the hole portion 62ba is formed in a circular shape in plan view.
  • the hole portion 62ba has a size that allows the cooling unit 8 to pass therethrough at the first position P1. Thereby, it is possible to move the cooling unit 8 between the upper position and the lower position via the hole 62ba.
  • the hole 62ba has a size that allows the ultraviolet irradiation section 11 to pass therethrough at the second position P2. Thereby, it is possible to move the ultraviolet irradiation section 11 between the upper position and the lower position via the hole 62ba.
  • the hole portion 62ba is provided inside the expand ring 64 .
  • the cooling unit 8 and the ultraviolet irradiation section 11 are configured to move inside the expand ring 64 through the hole 62ba.
  • the heat shrink portion 10 is arranged on the Z1 direction side of the expanded portion 6 moved by the Y direction movement mechanism 62 at the second position P2, which is the heat shrink position. Further, the heating ring 111 and the suction ring 112 of the heat shrink portion 10 are driven by the driving force of the motor 110a of the Z-direction moving mechanism 110 to move the sheet member 220 to the upper position where the sheet member 220 is not heated and the sheet member 220 to be heated.
  • the expansion maintaining ring 113 of the heat shrink portion 10 is moved between the upper position not pressing the sheet member 220 and the lower position pressing the sheet member 220 at the second position P2 by the driving force of a cylinder such as an air cylinder.
  • a cylinder such as an air cylinder.
  • the upper position is a retracted position where the expanding portion 6 and the wafer ring structure 200 moving in the Y1 direction can be avoided.
  • the lower position is a position near the sheet member 220 .
  • the heat shrink portion 10 (the heating ring 111, the suction ring 112, and the expansion maintaining ring 113) is configured to descend in the Z2 direction from the upper position to the lower position when heat shrinking the sheet member 220.
  • the up-down mechanism (Z-direction moving mechanism 110) for the heating ring 111 and the suction ring 112 and the up-down mechanism (cylinder) for the extension maintaining ring 113 are separate mechanisms. Therefore, the heating ring 111, the suction ring 112, and the expansion retaining ring 113 can move up and down independently of each other.
  • the expansion maintaining ring 113 is configured to sandwich the sheet member 220 in the vertical direction (Z direction) with the expanding ring 64 .
  • the expansion maintaining ring 113 is configured to maintain the expanded state of the portion of the sheet member 220 corresponding to the wafer 210 .
  • the heating ring 111 heats the portion 220b of the sheet member 220 around the wafer 210 (the outside of the expansion maintaining ring 113) by the sheathed heater, which is a heating mechanism. part).
  • the intake ring 112 is configured to intake gas generated from the sheet member 220 due to the heating while the sheet member 220 is heated by the heating ring 111 .
  • the ultraviolet irradiation unit 11 irradiates the sheet member 220 with ultraviolet rays in parallel with heating the sheet member 220 by the heat shrink unit 10, thereby It is configured to reduce the adhesion of member 220 .
  • the ultraviolet irradiation section 11 for irradiating the sheet member 220 with ultraviolet rays when the sheet member 220 is heat-shrinked by the heat-shrink section 10 is arranged at the second position P2, which is the heat-shrink position.
  • the sheet member 220 when the sheet member 220 is heated and shrunk, the sheet member 220 is simultaneously irradiated with ultraviolet rays to reduce the adhesive strength of the sheet member 220 .
  • the ultraviolet irradiation unit 11 is arranged on the Z2 direction side with respect to the wafer ring structure 200 .
  • the ultraviolet irradiation section 11 is configured to be movable between an ultraviolet irradiation position P3 and a retracted position P4 arranged along a direction (Z direction) intersecting the surface of the sheet member 220 .
  • the ultraviolet irradiation unit 11 is driven by the driving force of a cylinder 121 such as an air cylinder. , and the retracted position (see FIG. 13).
  • the ultraviolet irradiation section 11 is configured to rise in the Z1 direction from a lower retracted position P4 to an upper ultraviolet irradiation position P3.
  • the Y-direction moving mechanism 62 moves from the second position P2 where heat shrinking is performed to the first position P1 where expansion is performed to expand the expanding portion 6 (Z
  • the direction moving mechanism 61, the clamp portion 63 and the expand ring 64) are configured to move in the Y2 direction.
  • the Y-direction moving mechanism 62 moves from the second position P2 independently of the heat shrink portion 10 and the ultraviolet irradiation portion 11 without moving the heat shrink portion 10 and the ultraviolet irradiation portion 11 from the second position P2. It is configured to move the expanding portion 6 in the Y2 direction to the first position P1.
  • the heat shrink portion 10 is retracted to the upper position
  • the ultraviolet irradiation portion 11 is retracted to the lower retracted position P4.
  • the expansion maintaining ring 113 is in circumferential contact with the periphery of the wafer 210 on one side (the Z1 direction side) of the sheet member 220 , and together with the expand ring 64 , the sheet is compressed.
  • the pinching and holding of the member 220 maintains the expansion of the sheet member 220 where the wafer 210 is placed.
  • the expansion maintaining ring 113 and the expand ring 64 sandwich the sheet member 220 when the sheet member 220 is contracted by the heat shrink section 10 in parallel with the ultraviolet irradiation of the sheet member 220 by the ultraviolet irradiation section 11 . It is configured to maintain expansion of the sheet member 220 in the portion where the wafer 210 is placed by holding such a position.
  • the extension maintaining ring 113 is arranged so as to cover one side (Z1 direction side) of the sheet member 220 and is configured to shield the ultraviolet rays irradiated from the ultraviolet irradiation section 11 . Further, the ultraviolet irradiation section 11 is configured to irradiate the sheet member 220 with ultraviolet rays from the other side (Z2 direction side) of the sheet member 220 .
  • the expansion retaining ring 113 includes a bottom portion 113a and side portions 113b.
  • the bottom portion 113a is arranged to cover the upper side (Z1 direction side).
  • the side portion 113b is formed in an annular shape so as to surround the wafer 210 of the sheet member 220 .
  • the bottom surface portion 113a is connected to the side surface portion 113b on the side opposite to the sheet member 220 (Z1 direction side).
  • the bottom portion 113a is formed in a circular shape.
  • the expansion maintenance ring 113 is made of a member that blocks ultraviolet rays.
  • the expansion retention ring 113 is made of colored resin.
  • the expansion retaining ring 113 is made of metal such as stainless steel or aluminum.
  • the expand ring 64 abuts against the other side (Z2 direction side) of the sheet member 220 to support the sheet member 220 and surround the ultraviolet irradiation section 11 . are placed in That is, as shown in FIG. 14 , the ultraviolet irradiation section 11 is surrounded by the expand ring 64 when arranged at the ultraviolet irradiation position P3. Also, the expand ring 64 is made of a material that blocks ultraviolet rays. The expand ring 64 is made of metal such as stainless steel or aluminum. Alternatively, the expand ring 64 is made of colored resin.
  • the ultraviolet irradiation unit 11 emits ultraviolet rays so that the ultraviolet irradiation process for reducing the adhesive force of the sheet member 220 is completed within the working time when the sheet member 220 is heated and shrunk by the heat shrink unit 10 . intensity is adjusted.
  • the ultraviolet irradiation unit 11 is set so that the intensity of the ultraviolet rays to be irradiated is increased when the ultraviolet irradiation time is shortened.
  • the ultraviolet irradiation unit 11 is set so that the intensity of the ultraviolet rays to be irradiated becomes smaller when the ultraviolet irradiation time is lengthened.
  • the cassette unit 2 is arranged at a position different from the first position P1 and the second position P2 in plan view.
  • the lift-up hand section 3 is arranged at a position different from the first position P1 and the second position P2 in plan view.
  • the direction (Y2 direction) in which the lift-up hand section 3 takes out the wafer ring structure 200 from the cassette section 2 is substantially parallel to the direction (Y1 direction) in which the Y-direction moving mechanism 62 moves the expanding section 6 .
  • the insertion/extraction direction (Y direction) of the wafer ring structure 200 by the lift-up hand portion 3 and the moving direction (Y direction) of the expanding portion 6 by the Y direction moving mechanism 62 are substantially parallel to each other.
  • the cassette part 2 is arranged side by side with the second position P2, which is the heat shrink position, in the X direction.
  • the take-out position of the wafer ring structure 200 by the lift-up hand section 3 is arranged in the X direction side by side with the first position P1, which is the expanded position.
  • the extraction process is a process performed in step S1 in the semiconductor chip manufacturing process.
  • step S101 it is determined whether or not the lift-up hand 32 of the lift-up hand section 3 is free. If the lift-up hand 32 is not free, the takeout process is terminated. If the lift-up hand 32 is free, the process proceeds to step S102.
  • step S102 it is determined whether or not the lift-up hand 32 exists within the wafer cassette 22 of the cassette section 2. If the lift-up hand 32 does not exist within the wafer cassette 22, the process proceeds to step S104. Also, when the lift-up hand 32 exists in the wafer cassette 22, the process proceeds to step S103.
  • step S103 the lift-up hand 32 is moved from inside the wafer cassette 22 to outside the wafer cassette 22 by the Y-direction moving mechanism 31 in the Y2 direction.
  • step S ⁇ b>104 the wafer cassette 22 is moved in the Z direction by the Z-direction moving mechanism 21 so that the lift-up hand 32 can take out the wafer ring structure 200 to be taken out from the wafer cassette 22 .
  • the upper surface of the lift-up hand 32 is positioned slightly above the lower surface of the ring-shaped member 230 of the wafer ring structure 200 to be taken out in the wafer cassette 22 in the Z2 direction.
  • the wafer cassette 22 is moved in the Z direction by the Z direction moving mechanism 21 .
  • step S105 the lift-up hand 32 is moved in the Y1 direction by the Y-direction moving mechanism 31 so as to be positioned right below the ring-shaped member 230 of the wafer ring structure 200 to be taken out in the wafer cassette 22.
  • step S ⁇ b>106 the wafer ring structure 200 to be taken out from the wafer cassette 22 is transferred to the lift-up hand 32 .
  • step S106 the lower surface of the ring-shaped member 230 of the wafer ring structure 200 to be taken out from the wafer cassette 22 is lifted slightly by the lift-up hand 32 from the upper surfaces of the pair of mounting portions 23.
  • the wafer cassette 22 is moved in the Z2 direction by the Z-direction moving mechanism 21 .
  • step S107 the lift-up hand 32 is moved in the Y2 direction by the Y-direction movement mechanism 31 while the lower surface of the ring-shaped member 230 of the wafer ring structure 200 to be taken out is supported by the upper surface of the lift-up hand 32. .
  • the wafer ring structure 200 to be taken out is taken out from the wafer cassette 22 by the lift-up hand 32 .
  • the extraction process is terminated.
  • Transfer processing in the expanding device 100 will be described with reference to FIG. 16 .
  • the transfer process is a process performed in step S2 or S7 in the semiconductor chip manufacturing process.
  • step S201 the suction hand 43 of the suction hand unit 4 is lifted by the Z-direction moving mechanism 42. As shown in FIG. 16, in step S201, the suction hand 43 of the suction hand unit 4 is lifted by the Z-direction moving mechanism 42. As shown in FIG.
  • step S ⁇ b>202 the suction hand 43 is moved above the wafer ring structure 200 by the X-direction moving mechanism 41 .
  • the suction hand 43 is moved above the wafer ring structure 200 supported by the lift-up hand 32 .
  • the suction hand 43 is moved above the wafer ring structure 200 supported by the expanding section 6 .
  • step S ⁇ b>203 the suction hand 43 is lowered toward the wafer ring structure 200 by the Z-direction moving mechanism 42 .
  • step S204 the suction hand 43 sucks the ring-shaped member 230 of the wafer ring structure 200 by the negative pressure supplied from the negative pressure generator.
  • step S205 the suction hand 43 is lifted by the Z-direction moving mechanism 42.
  • step S206 the suction hand 43 is moved above the transfer destination by the X-direction moving mechanism 41. Specifically, in the case of step S2 in the semiconductor chip manufacturing process, the suction hand 43 is moved above the expanding section 6 at the first position P1. Further, in the case of step S ⁇ b>7 in the semiconductor chip manufacturing process, the suction hand 43 is moved above the lift-up hand 32 .
  • step S207 the suction hand 43 is lowered by the Z-direction moving mechanism 42 toward the transfer destination (expanding section 6 or lift-up hand 32).
  • step S208 the suction of the ring-shaped member 230 of the wafer ring structure 200 by the suction hand 43 is released. This completes the transfer of the wafer ring structure 200 to the transfer destination. Then, the transfer process is terminated.
  • the expanding process in the expanding device 100 will be described with reference to FIGS. 17 and 18.
  • FIG. The expanding process is a process performed in step S3 in the semiconductor chip manufacturing process.
  • the expanding process is performed at the first position P1.
  • the suction hand 43 is lifted by the Z-direction moving mechanism 42 in step S301.
  • the ring-shaped member 230 of the wafer ring structure 200 is supported by the lower holding portion 63a of the clamp portion 63. As shown in FIG. 17, the suction hand 43 is lifted by the Z-direction moving mechanism 42 in step S301.
  • the ring-shaped member 230 of the wafer ring structure 200 is supported by the lower holding portion 63a of the clamp portion 63. As shown in FIG.
  • step S302 the plurality of sliding moving bodies 63ba of the upper gripping portion 63b are horizontally slid toward the wafer 210 side.
  • step S303 while supporting the ring-shaped member 230 of the wafer ring structure 200, the lower grip part 63a is raised. Thereby, the ring-shaped member 230 is gripped and fixed between the upper gripping portion 63b and the lower gripping portion 63a.
  • step S304 the fragment cleaner 9 is lowered toward the wafer ring structure 200 by the cylinder together with the cool air supply unit 7.
  • step S305 it is determined whether cooling by supplying cool air to the sheet member 220 by the cool air supply unit 7 is necessary. If cooling by supply of cool air to the sheet member 220 by the cool air supply unit 7 is required, the process proceeds to step S305a. Then, in step S305a, supply of cool air to the sheet member 220 by the cool air supply unit 7 is started. Then, the process proceeds to step S306. If cooling by supplying cool air to the sheet member 220 by the cool air supply unit 7 is not necessary, the process proceeds to step S306 without performing the process of step S305a.
  • step S306 it is determined whether cooling of the sheet member 220 by the cooling unit 8 is necessary. If the sheet member 220 needs to be cooled by the cooling unit 8, the process proceeds to step S307. Then, in step S307, in addition to the cooling of the sheet member 220 by the cool air supply unit 7, the cooling of the sheet member 220 by the cooling unit 8 is performed. Then, the process proceeds to step S308. If the sheet member 220 does not need to be cooled by the cooling unit 8, the process proceeds to step S308 without performing the process of step S307.
  • step S308 the suction of the scattered matter by the fragment cleaner 9 is started.
  • step S309 the clamp portion 63 is rapidly lowered by the Z-direction moving mechanism 61 to press the sheet member 220 against the expand ring 64, thereby expanding the sheet member 220.
  • the wafer 210 on the sheet member 220 is divided into a plurality of matrix-shaped semiconductor chips, and the gaps between the plurality of semiconductor chips are widened.
  • the clamp portion 63 is lowered from the expansion start position to the expansion completion position.
  • step S310 supply of cold air to the sheet member 220 by the cool air supply unit 7 is stopped. If it is determined in step 305 that cooling by supplying cool air to the sheet member 220 by the cool air supply unit 7 is not necessary, the process proceeds to step S311 without performing the processing of step S310.
  • step S311 the suction of the scattered matter by the fragment cleaner 9 is stopped.
  • step S312 the fragment cleaner 9 is lifted by the cylinder together with the cool air supply unit 7. Then, the expanding process ends. Then, while maintaining the expanded state of the sheet member 220, the expanding portion 6 (the Z-direction moving mechanism 61, the clamping portion 63 and the expanding ring 64) is moved from the first position P1 to the second position P2 by the Y-direction moving mechanism 62. be moved.
  • the heat shrink process in the expanding device 100 will be described with reference to FIGS. 19 and 20.
  • FIG. The heat shrink process is a process performed in step S5 in the semiconductor chip manufacturing process.
  • step S401 the ultraviolet irradiation unit 11 is raised by the cylinder 121.
  • step S402 the extension maintaining ring 113 is lowered by the cylinder. Thereby, the sheet member 220 is sandwiched between the expansion maintaining ring 113 and the expanding ring 64 .
  • step S403 the heating ring 111 and the suction ring 112 are lowered by the Z-direction moving mechanism 110.
  • the up-down mechanism (Z-direction moving mechanism 110) for the heating ring 111 and the suction ring 112 and the up-down mechanism (cylinder) for the extension maintaining ring 113 are separate mechanisms.
  • step S404 intake by the intake ring 112 is started.
  • step S405 heating of the sheet member 220 by the heating ring 111 and irradiation of the sheet member 220 by the ultraviolet irradiation unit 11 with ultraviolet rays are started.
  • the slack of the portion 220b of the sheet member 220 surrounding the wafer 210 is contracted and removed.
  • the irradiation of the ultraviolet rays to the sheet member 220 by the ultraviolet irradiation unit 11 reduces the adhesive force of the adhesive layer of the sheet member 220 .
  • step S406 it is determined whether or not the heating time of the sheet member 220 by the heating ring 111 has reached the set time. If the heating time of the sheet member 220 by the heating ring 111 has not reached the set time, the process of step S406 is repeated. If the heating time of the sheet member 220 by the heating ring 111 reaches the set time, the process proceeds to step S407.
  • step S407 the heating of the sheet member 220 by the heating ring 111 is stopped.
  • step S408 the clamp part 63 is raised at a low speed by the Z-direction moving mechanism 61.
  • step S409 it is determined whether or not the clamp portion 63 has risen to the expansion start position. If the clamp portion 63 has not risen to the expansion start position, the process of step S409 is repeated. Further, when the clamp portion 63 is raised to the expansion start position, the process proceeds to step S410.
  • steps S406 to S409 an example in which heating of the sheet member 220 by the heating ring 111 and lifting of the clamping portion 63 by the Z-direction moving mechanism 61 are performed at once was shown. is not limited to For example, the heating of the sheet member 220 by the heating ring 111 and the lifting of the clamping portion 63 by the Z-direction moving mechanism 61 may be performed in multiple steps. That is, the clamping portion 63 may be raised to the expansion start position while repeating the heating of the sheet member 220 by the heating ring 111 and the raising of the clamping portion 63 by the Z-direction moving mechanism 61 .
  • step S410 the intake by the intake ring 112 and the irradiation of the ultraviolet rays to the sheet member 220 by the ultraviolet irradiation unit 11 are stopped.
  • step S411 the heating ring 111 and the intake ring 112 are lifted by the Z-direction moving mechanism 110.
  • step S412 the expansion retaining ring 113 is lifted by the cylinder.
  • step S413 the ultraviolet irradiation section 11 is lowered by the cylinder 121. Then, the heat shrink process is terminated. Then, the Y-direction moving mechanism 62 moves the expanding portion 6 (the Z-direction moving mechanism 61, the clamp portion 63 and the expanding ring 64) from the second position P2 to the first position P1. Then, the wafer ring structure 200 that has been expanded and heat-shrinked is transferred from the expanding section 6 at the first position P ⁇ b>1 to the lift-up hand 32 by the suction hand 43 .
  • the accommodation process in the expanding device 100 will be described with reference to FIG. 21 .
  • the accommodation process is a process performed in step S8 in the semiconductor chip manufacturing process.
  • step S501 it is determined whether or not the lift-up hand 32 of the lift-up hand unit 3 is free. If the lift-up hand 32 is not free, the accommodation process is terminated. If the lift-up hand 32 is vacant, the process proceeds to step S502.
  • step S502 it is determined whether or not the lift-up hand 32 exists within the wafer cassette 22 of the cassette section 2. If the lift-up hand 32 does not exist within the wafer cassette 22, the process proceeds to step S504. Also, if the lift-up hand 32 exists in the wafer cassette 22, the process proceeds to step S503.
  • step S503 the lift-up hand 32 is moved from inside the wafer cassette 22 to outside the wafer cassette 22 by the Y-direction moving mechanism 31 in the Y2 direction.
  • step S504 the wafer cassette 22 is moved in the Z direction by the Z-direction moving mechanism 21 so that the wafer ring structure 200 to be accommodated on the lift-up hand 32 can be accommodated in the wafer cassette 22.
  • the ring-shaped member of the wafer ring structure 200 to be accommodated on the lift-up hand 32 is placed slightly above the upper surfaces of the pair of mounting portions 23 in the wafer cassette 22 in the Z1 direction.
  • the wafer cassette 22 is moved in the Z-direction by the Z-direction moving mechanism 21 so that the lower surface of 230 of is positioned.
  • step S505 the lower surface of the ring-shaped member 230 of the wafer ring structure 200 to be accommodated on the lift-up hand 32 is positioned at the accommodation position in the wafer cassette 22 (directly above the pair of mounting portions 23). Then, the lift-up hand 32 is moved in the Y1 direction by the Y-direction moving mechanism 31 .
  • step S506 the wafer ring structure 200 to be accommodated on the lift-up hand 32 is transferred to the pair of placement parts 23 in the wafer cassette 22. Specifically, in step S506, the wafer cassette 22 is moved in the Z1 direction by the Z-direction moving mechanism 21 so that the upper surface of the lift-up hand 32 is slightly below the upper surfaces of the pair of mounting portions 23. be.
  • step S508 the lift-up hand 32 is moved in the Y2 direction by the Y-direction moving mechanism 31 while the lower surface of the ring-shaped member 230 of the wafer ring structure 200 to be accommodated is supported by the upper surfaces of the pair of mounting portions 23. be done. As a result, the lift-up hand 32 is taken out while the wafer ring structure 200 to be accommodated is accommodated in the wafer cassette 22 . Then, the accommodation process ends.
  • the sheet member 220 when the sheet member 220 is heated by the heat shrink portion 10, the sheet member 220 is irradiated with ultraviolet rays in parallel to reduce the adhesive strength of the sheet member 220. 11 is provided.
  • the adhesive strength of the sheet member 220 can be reduced by the ultraviolet irradiation section 11 while the heat shrink section 10 heats and shrinks the slack of the sheet member 220 around the wafer 210 .
  • the processing time can be reduced as compared with the case where the contraction processing of the sheet member 220 by the heat shrink unit 10 and the processing for reducing the adhesive strength of the sheet member 220 by the ultraviolet irradiation unit 11 are performed in order. .
  • the extension maintaining ring 113 is provided so as to cover one side of the sheet member 220 and shields the ultraviolet rays irradiated from the ultraviolet irradiation section 11.
  • the ultraviolet irradiation section 11 It is configured to irradiate the sheet member 220 with ultraviolet rays from the other side of the sheet member 220 .
  • the extension retention ring 113 can prevent the ultraviolet rays emitted from the ultraviolet irradiation section 11 from leaking to the outside.
  • the expansion maintaining ring 113 is connected to the annular side portion 113b of the sheet member 220 so as to surround the wafer 210 and the side portion opposite to the sheet member 220. and a bottom portion 113a.
  • ultraviolet rays emitted to the side of the sheet member 220 can be blocked by the side portion 113b of the extension maintaining ring 113, and ultraviolet rays emitted in a direction perpendicular to the surface of the sheet member 220 can be blocked by the extension maintaining ring 113. can be shielded by the bottom portion 113a.
  • the sheet member 220 when the sheet member 220 is irradiated with ultraviolet rays by the ultraviolet irradiation section 11, the sheet member 220 is supported by coming into contact with the other side of the sheet member 220, and the ultraviolet irradiation section 11 is supported.
  • An expanding ring 64 is provided surrounding and formed of a material that blocks ultraviolet rays.
  • the expand ring 64 that supports the sheet member 220 can shield the ultraviolet rays emitted from the ultraviolet irradiation section 11 to the surroundings, so that the member that supports the sheet member 220 and the member that shields the ultraviolet rays are provided separately. Compared to the case, the number of parts can be reduced, and the device configuration can be simplified.
  • the expansion maintaining ring 113 and the expand ring 64 irradiate the sheet member 220 with the ultraviolet rays by the ultraviolet irradiation section 11 while the sheet member 220 is held by the heat shrink section 10 in parallel.
  • the expansion of the sheet member 220 at the portion where the wafer 210 is arranged is maintained.
  • the extension maintaining ring 113 that shields the ultraviolet rays irradiated by the ultraviolet irradiation section 11 maintains the expansion of the portion of the sheet member 220 where the wafer 210 is arranged when the sheet member 220 is shrunk by the heat shrink section 10 . Therefore, the number of parts can be reduced and the configuration of the device can be simplified as compared with the case where a member for maintaining the expansion of the sheet member 220 is separately provided.
  • the ultraviolet irradiation section 11 is movable between the ultraviolet irradiation position P3 and the retracted position P4 arranged along the direction intersecting the surface of the sheet member 220. It is configured. As a result, when the sheet member 220 is to be irradiated with ultraviolet rays, the ultraviolet irradiation section 11 is moved to the ultraviolet irradiation position P3, and when the sheet member 220 is not to be irradiated with ultraviolet rays, the ultraviolet irradiation section 11 is moved to the retracted position P4. can be evacuated. Accordingly, when the ultraviolet irradiation unit 11 is retracted, further processing can be performed on the sheet member 220, so that a plurality of types of processing can be performed on the sheet member 220 at the same position.
  • the ultraviolet irradiation unit 11 emits ultraviolet rays that reduce the adhesive force of the sheet member 220 within the working time for heating and shrinking the sheet member 220 by the heat shrink unit 10 .
  • the intensity of the ultraviolet rays to be irradiated is adjusted so that the irradiation process ends.
  • the process of irradiating the ultraviolet rays to reduce the adhesion of the sheet member 220 can be completed while the sheet member 220 is heated and shrunk.
  • the sheet member is heated by the heat shrink portion from one side of the sheet member, and the sheet member is irradiated with ultraviolet rays by the ultraviolet irradiation portion from the other side of the sheet member.
  • the present invention is not limited to this.
  • the sheet member may be heated from the same side by the heat shrink portion and the sheet member may be irradiated with ultraviolet rays by the ultraviolet irradiation portion.
  • the present invention is similar to this.
  • the ultraviolet shielding portion may be provided below the sheet member, and the support ring may be provided above the sheet member. Further, the ultraviolet shielding portion and the support ring may be arranged so as to face each other in the horizontal direction with the sheet member interposed therebetween.
  • the expansion maintenance ring (ultraviolet shielding portion) is formed to have a cylindrical shape
  • the present invention is not limited to this.
  • the ultraviolet shielding portion may be formed in a cylindrical shape having a polygonal cross section.
  • the heating ring of the heat shrink portion heats the entire circumference of the wafer surrounding portion of the sheet member, but the present invention is not limited to this.
  • the heat shrink portion may be configured to sequentially heat the periphery of the wafer portion by portion.
  • the extension maintaining ring that maintains the expansion of the sheet member in the portion where the wafer is placed shields the ultraviolet rays emitted from the ultraviolet irradiation portion.
  • an ultraviolet ray shielding member provided separately from the extension retention ring may be configured to shield the ultraviolet ray emitted from the ultraviolet irradiating section.
  • control processing of the second control unit 13 has been described using a flow-driven flowchart in which processing is performed in order along the processing flow.
  • the present invention is not limited to this.
  • the control processing of the control unit may be performed by event-driven processing that executes processing on an event-by-event basis. In this case, it may be completely event-driven, or a combination of event-driven and flow-driven.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Small-Scale Networks (AREA)
  • Interconnected Communication Systems, Intercoms, And Interphones (AREA)
  • Circuit For Audible Band Transducer (AREA)
PCT/JP2021/033739 2021-09-14 2021-09-14 エキスパンド装置およびエキスパンド方法 WO2023042261A1 (ja)

Priority Applications (5)

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PCT/JP2021/033739 WO2023042261A1 (ja) 2021-09-14 2021-09-14 エキスパンド装置およびエキスパンド方法
CN202180101113.9A CN117716470A (zh) 2021-09-14 2021-09-14 扩张装置及扩张方法
JP2023547968A JPWO2023042261A1 (zh) 2021-09-14 2021-09-14
KR1020247001665A KR20240021304A (ko) 2021-09-14 2021-09-14 익스팬드 장치 및 익스팬드 방법
TW111104884A TWI824409B (zh) 2021-09-14 2022-02-10 擴展裝置及擴展方法

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006054246A (ja) * 2004-08-10 2006-02-23 Disco Abrasive Syst Ltd ウエーハの分離方法
JP2010206136A (ja) * 2009-03-06 2010-09-16 Disco Abrasive Syst Ltd ワーク分割装置
JP2011049264A (ja) * 2009-08-26 2011-03-10 Lintec Corp 光照射装置及び光照射方法
JP2012186445A (ja) * 2011-02-16 2012-09-27 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法
JP2015133370A (ja) * 2014-01-10 2015-07-23 株式会社ディスコ 分割装置及び被加工物の分割方法
JP2018206936A (ja) * 2017-06-02 2018-12-27 東京エレクトロン株式会社 基板処理システム、基板処理方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018050010A (ja) * 2016-09-23 2018-03-29 株式会社ディスコ 加工方法
KR20180050010A (ko) 2016-11-04 2018-05-14 정인호 비소성 방식의 기능성 내장타일 제조방법 및 이에 의하여 제조된 기능성 내장타일

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006054246A (ja) * 2004-08-10 2006-02-23 Disco Abrasive Syst Ltd ウエーハの分離方法
JP2010206136A (ja) * 2009-03-06 2010-09-16 Disco Abrasive Syst Ltd ワーク分割装置
JP2011049264A (ja) * 2009-08-26 2011-03-10 Lintec Corp 光照射装置及び光照射方法
JP2012186445A (ja) * 2011-02-16 2012-09-27 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法
JP2015133370A (ja) * 2014-01-10 2015-07-23 株式会社ディスコ 分割装置及び被加工物の分割方法
JP2018206936A (ja) * 2017-06-02 2018-12-27 東京エレクトロン株式会社 基板処理システム、基板処理方法

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KR20240021304A (ko) 2024-02-16
TW202312254A (zh) 2023-03-16
CN117716470A (zh) 2024-03-15

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