WO2022162928A1 - Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage - Google Patents

Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage Download PDF

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Publication number
WO2022162928A1
WO2022162928A1 PCT/JP2021/003466 JP2021003466W WO2022162928A1 WO 2022162928 A1 WO2022162928 A1 WO 2022162928A1 JP 2021003466 W JP2021003466 W JP 2021003466W WO 2022162928 A1 WO2022162928 A1 WO 2022162928A1
Authority
WO
WIPO (PCT)
Prior art keywords
lift pin
substrate
lift
semiconductor manufacturing
manufacturing apparatus
Prior art date
Application number
PCT/JP2021/003466
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English (en)
Japanese (ja)
Inventor
宗之 松本
宏和 福井
Original Assignee
株式会社天谷製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社天谷製作所 filed Critical 株式会社天谷製作所
Priority to JP2022538113A priority Critical patent/JP7333675B2/ja
Priority to KR1020247009364A priority patent/KR20240042203A/ko
Priority to CN202180005646.7A priority patent/CN115210859A/zh
Priority to KR1020227014782A priority patent/KR102651374B1/ko
Priority to PCT/JP2021/003466 priority patent/WO2022162928A1/fr
Publication of WO2022162928A1 publication Critical patent/WO2022162928A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the present invention relates to a lift pin that supports a substrate, a semiconductor manufacturing apparatus equipped with this lift pin, and a manufacturing method of this lift pin.
  • semiconductor manufacturing apparatus An apparatus (hereinafter simply referred to as “semiconductor manufacturing apparatus") that manufactures semiconductor devices by crystal-growing a semiconductor material on a substrate placed on a stage to form a film has been developed.
  • semiconductor manufacturing equipment requires special conditions such as the use of reactive gases in environments such as high temperature and high vacuum. Therefore, in order to improve the yield of semiconductor devices, a high degree of cleanliness is required inside the semiconductor manufacturing apparatus.
  • the substrate can be lifted by supporting at least three points on the back surface of the substrate with a support (hereinafter referred to as “lift pins”) connected to the lifting mechanism and lifting the lift pins.
  • lift pins a support
  • Patent Document 1 discloses a lift pin in which at least the surface region of the lift pin is made of a material having a lower strength than the susceptor on which the substrate is placed.
  • the internal environment of the semiconductor manufacturing equipment is special as described above, and can affect the life of the lift pins.
  • the lift pins should be made of a material that does not contaminate the portion of the backside of the substrate that is in contact with the lift pins.
  • Patent Document 1 does not consider the durability performance of the lift pins, the contamination of the substrate, and the like, and further technological development has been required regarding the structure of the lift pins.
  • the present invention has been made in view of the above problems in the prior art, and an object of the present invention is to provide a lift pin, a semiconductor manufacturing apparatus, and a lift pin manufacturing method that ensure strength and do not affect the substrate.
  • a lift pin that is attached to an elevating mechanism that lifts the substrate during transportation of the substrate in a semiconductor manufacturing apparatus and that supports the substrate, composed of a first member that contacts the substrate when the substrate is lifted, and a second member that is connected to the lifting mechanism; the first member has a hardness lower than that of the substrate; The second member is characterized by having a higher strength than the first member, Lift pins are provided.
  • FIG. 5 is a diagram showing an example of the operation of lift pins when transferring a substrate in the semiconductor manufacturing apparatus of the present embodiment
  • FIG. 5 is a diagram showing an example of the operation of lift pins when transferring a substrate in the semiconductor manufacturing apparatus of the present embodiment
  • Sectional drawing which shows the example of the structure of the lift pin of this embodiment.
  • FIG. 4 is a diagram showing a first manufacturing method for manufacturing the lift pin of the present embodiment; The figure which shows the 2nd manufacturing method which manufactures the lift pin of this embodiment.
  • the semiconductor manufacturing apparatus 1 uses a CVD (Chemical Vapor Deposition) method in which a semiconductor material is crystal-grown on the surface of the substrate W by reacting the substrate W with a gaseous precursor material.
  • CVD Chemical Vapor Deposition
  • a semiconductor material is crystal-grown on the surface of the substrate W by reacting the substrate W with a gaseous precursor material.
  • the present embodiment can be applied to the semiconductor manufacturing apparatus 1 that performs various crystal growths such as the sputtering method, the ALD (Atomic Layer Deposition) method, the MBE (Molecular Beam Epitaxy) method, and the like.
  • FIG. 1 is a diagram showing the schematic configuration of the internal space of the semiconductor manufacturing apparatus 1 of this embodiment.
  • the substrate W and the precursor material are caused to react with each other at a predetermined position in the internal space, and the semiconductor material is crystal-grown on the surface of the substrate W.
  • the substrate W is transported through the semiconductor manufacturing apparatus 1 at any time and placed on a holder or the like.
  • the substrate W is lifted from the holder by lift pins 10 and can be transported by an arm or the like, which will be described later.
  • the lift pins 10 are components that support the substrate W from the back side and are moved vertically by an elevating mechanism.
  • the semiconductor manufacturing apparatus 1 of this embodiment includes at least three lift pins 10a, 10b, and 10c in order to stably support the substrate W, as shown in FIG.
  • FIG. 2 and 3 are diagrams showing an operation example of the lift pins 10 when transferring the substrate W in the semiconductor manufacturing apparatus 1 of this embodiment.
  • the semiconductor manufacturing apparatus 1 having three lift pins 10 is exemplified, but the embodiment is not particularly limited.
  • FIG. 2A and 2B are side views of an operation example of the lift pins 10 of the present embodiment.
  • FIG. 2A shows a state in which the substrate W is placed on the holder 20, and
  • FIG. It shows a state lifted from
  • the holder 20 is provided with holes through which the lift pins 10a to 10c pass, and the lifting mechanism moves the lift pins 10a to 10c in the directions of the arrows in the figure.
  • the lifting mechanism moves the lift pins 10a to 10c in the directions of the arrows in the figure.
  • each lift pin 10 contacts the substrate W placed on the holder 20, and further lifts the substrate W from the holder 20.
  • the substrate W is brought into the state shown in FIG. 2(b), and then transported by an arm or the like.
  • the holder 20 may be heated during the crystal growth process of the substrate W, and from the viewpoint of heat uniformity, it is preferable that the holes through which the lift pins 10 pass are small. Therefore, the shape of the lift pin 10 is generally thin.
  • FIG. 3A and 3B are perspective views of an operation example of the lift pins 10 of the present embodiment.
  • FIG. 3A shows a state in which the substrate W is placed on the holder 20, and FIG. It shows a state lifted from That is, FIG. 3(a) corresponds to FIG. 2(a), and FIG. 3(b) corresponds to FIG. 2(b).
  • FIG. 3 the holder 20 in FIG. 2 is omitted from the viewpoint of visibility of the drawing.
  • the lift pins 10a to 10c are lifted in the direction of the arrow in FIG. 3(a) to contact the substrate W and the substrate W is lifted. At this time, the substrate W is lifted up to a height supported by the arm 30 as shown in FIG. 3(b). After that, the arm 30 moves in the direction of the arrow in FIG.
  • the lift pins 10a to 10c are lowered after the arm 30 is inserted under the substrate W, the substrate W is placed on the arm 30, and the substrate W is transported by the arm 30 moving.
  • the tip portion of the lift pin 10 is made of a material softer than the substrate W. As shown in FIG. On the other hand, since the lift pins 10 have an elongated shape, it is preferable that they have strength enough to withstand repeated transportation processes. Further, in order to maintain the cleanliness of the internal space of the semiconductor manufacturing apparatus 1, the material of the lift pins 10 is required to withstand high temperature and high vacuum and to have corrosion resistance to the precursor material. be done. Therefore, the lift pin 10 preferably has the structure of the embodiment described below.
  • FIG. 4 is a cross-sectional view showing an example of the structure of the lift pin 10 of this embodiment.
  • Various structures as shown in FIGS. 4(a) to 4(f) can be adopted for the lift pin 10 of the present embodiment.
  • the lift pin 10 of this embodiment is composed of a first member 11 forming a tip portion of the lift pin 10 and a second member 12 connected to an elevating mechanism below the lift pin 10 .
  • the lift pins 10 can be moved vertically by being driven by an elevating mechanism connected to the second member 12, and the first member 11 contacts the back surface of the substrate W when the substrate W is lifted.
  • the lift pins 10 of each structural example of the present embodiment use different materials for the first member 11 and the second member 12 .
  • the first member 11 forming the tip portion uses a material having a lower hardness than the substrate W, so that the substrate W can be lifted without damaging the substrate W during the transfer process.
  • Si silicon
  • Ge germanium
  • SiC silicon carbide
  • sapphire substrate GaN (gallium nitride) substrate
  • GaP gallium phosphide
  • GaAs Substrates made of various materials such as gallium nitride) substrates and InP (indium phosphide) substrates are used.
  • the material of the first member 11 in this embodiment can be selected to have lower hardness than these substrate materials.
  • polyimide resin, Teflon (registered trademark), rubber, carbon graphite, or the like can be used as the material of the first member 11, but the embodiment is not particularly limited.
  • the second member 12 can withstand repeated transportation processes.
  • the "high-strength material” used in the description of the present embodiment means that sufficient strength can be secured as the lift pins 10, that is, that the strength is enough to withstand the lifting and transportation of the substrate W, and that the crystal growth It means that it can withstand heating in the process.
  • the material of the second member 12 for example, tungsten, zirconia, various ceramic materials, various metal materials, etc. can be used, but the embodiment is not particularly limited.
  • FIG. 4(a) shows a first example of the structure of the lift pin 10 of this embodiment.
  • the lift pin 10 of the first example has a structure in which a second member 12 is arranged below a first member 11, as shown in FIG. 4(a).
  • the first member 11 and the second member 12 can be fixed by an adhesive or the like.
  • the first member 11 is made of a soft material and the second member 12 is made of a high-strength material. can improve the strength of
  • FIG. 4B shows a second example of the structure of the lift pin 10 of this embodiment.
  • the lift pin 10 of the second example has a structure in which at least the tip portion of the second member 12 is covered with the first member 11, as shown in FIG. 4(b). That is, the lift pin 10 of the second example has a structure in which the second member 12 is fitted into the concave portion of the first member 11 .
  • the lift pin 10 of the second example has the second member 12 fitted in the first member 11, and the contact area between the members can be increased. , the strength can be improved more than the lift pin 10 of the first example.
  • FIG. 4(c) shows a third example of the structure of the lift pin 10 of this embodiment.
  • the lift pin 10 of the third example has a structure in which a first member 11 is fitted in a hollow portion of a cylindrical second member 12, as shown in FIG. 4(c).
  • the lift pin 10 of the third example has the first member 11 fitted into the second member 12, and the contact area between the members can be increased. , the strength can be improved more than the lift pin 10 of the first example.
  • FIG. 4(d) shows a fourth example of the structure of the lift pin 10 of this embodiment.
  • the lift pin 10 of the fourth example as shown in FIG. It is a structure that fits in the part.
  • the lift pin 10 of the fourth example may also have a shape in which the second member 12 has a hollow portion, like the lift pin 10 of the third example shown in FIG. 4(c). That is, the lift pin 10 of the fourth example has a structure in which the first member 11 and the second member 12 are fitted together.
  • the lift pin 10 of the fourth example can be fixed by fitting the first member 11 and the second member 12 to each other. Since the contact area of the member can be increased, the strength can be improved more than the lift pin 10 of the third example.
  • FIG. 4(e) shows a fifth example of the structure of the lift pin 10 of this embodiment.
  • the lift pin 10 of the fifth example has the structure of the lift pin 10 shown in FIG. 4B, in which the first member 11 and the second member 12 are It is a structure having an uneven shape on the contact surface.
  • the lift pin 10 of the fifth example can fix the first member 11 and the second member 12 by friction. Strength can be improved more than the lift pin 10 .
  • FIG. 4(f) shows a sixth example of the structure of the lift pin 10 of this embodiment.
  • the lift pin 10 of the sixth example has the structure of the lift pin 10 shown in FIG. 4(c), in which the first member 11 and the second member 12 are It is a structure having an uneven shape on the contact surface.
  • the lift pin 10 of the sixth example can fix the first member 11 and the second member 12 by friction. Strength can be improved more than the lift pin 10 .
  • the lift pins 10 of the present embodiment do not damage the substrate W and can have the strength to withstand repeated transport processes. 4(b) to 4(f), the first member 11 and the second member 12 can be adhered and fixed with an adhesive or the like.
  • FIG. 5 and 6 various methods for manufacturing the lift pin 10 of this embodiment will be described with reference to FIGS. 5 and 6.
  • FIG. The lift pin 10 of this embodiment can be manufactured by a method other than that shown in FIGS. 5 and 6, and the following description does not particularly limit the embodiment.
  • FIG. 5 is a diagram showing a first manufacturing method for manufacturing the lift pin 10 of this embodiment.
  • the first manufacturing method shown in FIG. 5 is particularly suitable for manufacturing the lift pins 10 having the structures shown in FIGS. 4(c) and 4(d).
  • a step of processing the second member 12 into a cylindrical shape is performed.
  • the second member 12 may be prepared in the process of FIG. 5(a) by preparing a processed one.
  • a step of injecting the liquid first member 11 into the hollow portion of the second member 12 is performed.
  • a step of curing the injected first member 11 is performed.
  • a step of forming the cured first member 11 into a predetermined shape is performed.
  • the lift pin 10 of this embodiment as shown in FIG. 4B can be manufactured.
  • FIG. 6 is a diagram showing a second manufacturing method for manufacturing the lift pin 10 of this embodiment.
  • the method of manufacturing the lift pin 10 shown in FIG. 4(f) is described as an example, but the embodiment is not particularly limited, and the lift pin 10 having another structure may be manufactured. However, the manufacturing method of FIG. 6 can be adopted.
  • a step of processing the first member 11 and the second member 12 into a predetermined shape is performed.
  • the first member 11 is processed into a shape having a convex portion
  • the second member 12 is processed into a shape having a concave portion.
  • the convex portion of the first member 11 and the longitudinal surface of the concave portion of the second member 12, that is, the surface in contact with the member to be paired, are uneven. It can be processed as In this way, by processing the side surfaces of the convex portion and the concave portion into an uneven shape, the lift pin 10 as shown in FIG. 4(f) can be manufactured.
  • the lift pin 10 of the present embodiment can be manufactured as shown in FIG. 6(b).
  • an adhesive may be applied to the contact surfaces of the first member 11 and the second member 12, thereby further improving the strength of the lift pin 10.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente divulgation concerne une tige de levage, un appareil de fabrication de semi-conducteur et un procédé de fabrication de tige de levage, la tige de levage ayant une résistance garantie et n'affectant pas les cartes. Cette tige de levage 10, qui est montée sur un mécanisme de levage pour soulever une carte W pendant le transport de la carte W dans un appareil de fabrication de semi-conducteur et qui est destinée à supporter la carte W, comprend : un premier élément 11 qui vient en butée contre la carte W pendant le soulèvement de la carte W ; et un deuxième élément 12 qui est relié au mécanisme de levage. La tige de levage 10 est caractérisée en ce que le premier élément 11 présente une dureté inférieure à celle de la carte W, tandis que le deuxième élément 12 est plus résistant que le premier élément 11.
PCT/JP2021/003466 2021-02-01 2021-02-01 Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage WO2022162928A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022538113A JP7333675B2 (ja) 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法
KR1020247009364A KR20240042203A (ko) 2021-02-01 2021-02-01 반도체 제조 장치 및 반도체의 제조 방법
CN202180005646.7A CN115210859A (zh) 2021-02-01 2021-02-01 升降销、半导体制造装置及升降销制造方法
KR1020227014782A KR102651374B1 (ko) 2021-02-01 2021-02-01 리프트 핀, 반도체 제조 장치 및 리프트 핀 제조 방법
PCT/JP2021/003466 WO2022162928A1 (fr) 2021-02-01 2021-02-01 Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/003466 WO2022162928A1 (fr) 2021-02-01 2021-02-01 Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage

Publications (1)

Publication Number Publication Date
WO2022162928A1 true WO2022162928A1 (fr) 2022-08-04

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PCT/JP2021/003466 WO2022162928A1 (fr) 2021-02-01 2021-02-01 Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage

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JP (1) JP7333675B2 (fr)
KR (2) KR102651374B1 (fr)
CN (1) CN115210859A (fr)
WO (1) WO2022162928A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0566989U (ja) * 1992-02-04 1993-09-03 株式会社東京精密 プロービング装置用半導体ウエハステージ
JP2009059867A (ja) * 2007-08-31 2009-03-19 Tokyo Electron Ltd 基板載置台および基板処理装置
CN203434136U (zh) * 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
US20190252229A1 (en) * 2018-02-12 2019-08-15 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

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Publication number Priority date Publication date Assignee Title
JP3935303B2 (ja) 2000-03-17 2007-06-20 東京エレクトロン株式会社 加熱処理装置
KR100714200B1 (ko) * 2000-11-04 2007-05-02 엘지.필립스 엘시디 주식회사 건식식각 장치
JP2003218003A (ja) 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
KR20090130786A (ko) * 2008-06-16 2009-12-24 주식회사 아이피에스 진공처리장치의 리프트장치 및 그 제어방법
KR20130051686A (ko) * 2011-11-10 2013-05-21 엘지디스플레이 주식회사 기판 착탈 장치
JP6435992B2 (ja) 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
JP6766893B2 (ja) 2017-02-02 2020-10-14 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびシリコンエピタキシャルウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0566989U (ja) * 1992-02-04 1993-09-03 株式会社東京精密 プロービング装置用半導体ウエハステージ
JP2009059867A (ja) * 2007-08-31 2009-03-19 Tokyo Electron Ltd 基板載置台および基板処理装置
CN203434136U (zh) * 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
US20190252229A1 (en) * 2018-02-12 2019-08-15 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

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KR20240042203A (ko) 2024-04-01
JP7333675B2 (ja) 2023-08-25
JPWO2022162928A1 (fr) 2022-08-04
CN115210859A (zh) 2022-10-18
KR20220111681A (ko) 2022-08-09
KR102651374B1 (ko) 2024-03-26

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