JP7333675B2 - リフトピン、半導体製造装置およびリフトピン製造方法 - Google Patents

リフトピン、半導体製造装置およびリフトピン製造方法 Download PDF

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Publication number
JP7333675B2
JP7333675B2 JP2022538113A JP2022538113A JP7333675B2 JP 7333675 B2 JP7333675 B2 JP 7333675B2 JP 2022538113 A JP2022538113 A JP 2022538113A JP 2022538113 A JP2022538113 A JP 2022538113A JP 7333675 B2 JP7333675 B2 JP 7333675B2
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Prior art keywords
lift pin
substrate
lift
semiconductor manufacturing
manufacturing apparatus
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JP2022538113A
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Japanese (ja)
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JPWO2022162928A1 (fr
JPWO2022162928A5 (fr
Inventor
宗之 松本
宏和 福井
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株式会社 天谷製作所
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022538113A 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法 Active JP7333675B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/003466 WO2022162928A1 (fr) 2021-02-01 2021-02-01 Tige de levage, appareil de fabrication de semi-conducteur et procédé de fabrication de tige de levage

Publications (3)

Publication Number Publication Date
JPWO2022162928A1 JPWO2022162928A1 (fr) 2022-08-04
JPWO2022162928A5 JPWO2022162928A5 (fr) 2023-01-04
JP7333675B2 true JP7333675B2 (ja) 2023-08-25

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JP2022538113A Active JP7333675B2 (ja) 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法

Country Status (4)

Country Link
JP (1) JP7333675B2 (fr)
KR (2) KR20240042203A (fr)
CN (1) CN115210859A (fr)
WO (1) WO2022162928A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267217A (ja) 2000-03-17 2001-09-28 Tokyo Electron Ltd 加熱処理装置
JP2003218003A (ja) 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
CN203434136U (zh) 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
WO2018142788A1 (fr) 2017-02-02 2018-08-09 株式会社Sumco Broche de levage, dispositif de croissance épitaxiale utilisant ladite broche de levage, et procédé de fabrication de tranche épitaxiale de silicium
US20190252229A1 (en) 2018-02-12 2019-08-15 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2584997Y2 (ja) * 1992-02-04 1998-11-11 株式会社東京精密 プロービング装置用半導体ウエハステージ
KR100714200B1 (ko) 2000-11-04 2007-05-02 엘지.필립스 엘시디 주식회사 건식식각 장치
JP4783762B2 (ja) * 2007-08-31 2011-09-28 東京エレクトロン株式会社 基板載置台および基板処理装置
KR20090130786A (ko) * 2008-06-16 2009-12-24 주식회사 아이피에스 진공처리장치의 리프트장치 및 그 제어방법
KR20130051686A (ko) * 2011-11-10 2013-05-21 엘지디스플레이 주식회사 기판 착탈 장치
JP6435992B2 (ja) 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267217A (ja) 2000-03-17 2001-09-28 Tokyo Electron Ltd 加熱処理装置
JP2003218003A (ja) 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
CN203434136U (zh) 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
WO2018142788A1 (fr) 2017-02-02 2018-08-09 株式会社Sumco Broche de levage, dispositif de croissance épitaxiale utilisant ladite broche de levage, et procédé de fabrication de tranche épitaxiale de silicium
US20190252229A1 (en) 2018-02-12 2019-08-15 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

Also Published As

Publication number Publication date
KR20240042203A (ko) 2024-04-01
JPWO2022162928A1 (fr) 2022-08-04
WO2022162928A1 (fr) 2022-08-04
KR20220111681A (ko) 2022-08-09
CN115210859A (zh) 2022-10-18
KR102651374B1 (ko) 2024-03-26

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