JP7333675B2 - LIFT PIN, SEMICONDUCTOR MANUFACTURING APPARATUS AND LIFT PIN MANUFACTURING METHOD - Google Patents

LIFT PIN, SEMICONDUCTOR MANUFACTURING APPARATUS AND LIFT PIN MANUFACTURING METHOD Download PDF

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JP7333675B2
JP7333675B2 JP2022538113A JP2022538113A JP7333675B2 JP 7333675 B2 JP7333675 B2 JP 7333675B2 JP 2022538113 A JP2022538113 A JP 2022538113A JP 2022538113 A JP2022538113 A JP 2022538113A JP 7333675 B2 JP7333675 B2 JP 7333675B2
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lift pin
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宗之 松本
宏和 福井
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株式会社 天谷製作所
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Description

本発明は、基板を支持するリフトピン、このリフトピンを備える半導体製造装置およびこのリフトピンの製造方法に関する。 The present invention relates to a lift pin for supporting a substrate, a semiconductor manufacturing apparatus having the lift pin, and a method for manufacturing the lift pin.

ステージ上に載置された基板上に半導体材料を結晶成長させて成膜し、半導体デバイスを製造する装置(以下、単に「半導体製造装置」として参照する)が開発されている。半導体デバイスを製造するプロセスにおいて半導体製造装置は、高温、高真空といった環境下で反応性ガスを使用するなど、特殊な条件が求められる。したがって、半導体デバイスの歩留まりを向上するために、半導体製造装置の内部は、高い清浄度が要求される。 2. Description of the Related Art An apparatus (hereinafter simply referred to as a "semiconductor manufacturing apparatus") for manufacturing a semiconductor device by crystal-growing a semiconductor material on a substrate placed on a stage to form a film has been developed. In the process of manufacturing semiconductor devices, semiconductor manufacturing equipment requires special conditions such as the use of reactive gases in environments such as high temperature and high vacuum. Therefore, in order to improve the yield of semiconductor devices, a high degree of cleanliness is required inside the semiconductor manufacturing apparatus.

ところで、半導体製造装置において、ホルダ上の基板を搬送する場合には、基板をホルダから持ち上げ、アームを用いるのが一般的である。この際に、昇降機構と連結した支持体(以下、「リフトピン」として参照する)によって、基板の裏面の少なくとも3点を支持し、リフトピンを上昇させることで、基板を持ち上げることができる。 By the way, in a semiconductor manufacturing apparatus, when transporting a substrate on a holder, it is common to lift the substrate from the holder and use an arm. At this time, the substrate can be lifted by supporting at least three points on the back surface of the substrate with a support (hereinafter referred to as “lift pins”) connected to the lifting mechanism and lifting the lift pins.

リフトピンは基板裏面を支持することから、基板に傷を付けないようにするために、柔らかい材料で構成されていることが好ましい。この点につき、特開2016-225444号公報(特許文献1)では、リフトピンの少なくともその表層域が、基板を載置するサセプタよりも強度が低い材料で構成されたリフトピンを開示している。 Since the lift pins support the back surface of the substrate, they are preferably made of a soft material so as not to damage the substrate. In this respect, Japanese Patent Application Laid-Open No. 2016-225444 (Patent Document 1) discloses a lift pin in which at least the surface region of the lift pin is made of a material having a lower strength than the susceptor on which the substrate is placed.

しかしながら、半導体製造装置の内部環境は、上述した通り特殊なものであり、リフトピンの寿命に影響を及ぼし得る。加えて、リフトピンは、基板の裏面のうちリフトピンと接触する部分を汚染させない材料を選択することが求められる。このようなリフトピンの耐久性能や基板の汚染などについては、特許文献1にでは考慮されておらず、リフトピンの構成に関して、さらなる技術開発が求められていた。 However, the internal environment of the semiconductor manufacturing equipment is special as described above, and may affect the life of the lift pins. In addition, the lift pins should be made of a material that does not contaminate the portion of the backside of the substrate that is in contact with the lift pins. Patent Document 1 does not consider the durability performance of the lift pins, the contamination of the substrate, and the like, and further technological development has been required regarding the structure of the lift pins.

本発明は、上記従来技術における課題に鑑みてなされたものであり、強度を確保し、かつ、基板に影響を及ぼさないリフトピン、半導体製造装置およびリフトピン製造方法を提供することを目的とする。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a lift pin, a semiconductor manufacturing apparatus, and a lift pin manufacturing method that ensure strength and do not affect the substrate.

すなわち、本発明によれば、
半導体製造装置において基板の搬送時に前記基板を持ち上げる昇降機構に取り付けられ、前記基板を支持するリフトピンであって、
前記基板の持ち上げ時に当該基板と当接する第1の部材と、前記昇降機構と接続される第2の部材とから構成され、
前記第1の部材は、前記基板よりも硬度が低く、
前記第2の部材は、前記第1の部材よりも強度が高いことを特徴とする、
リフトピンが提供される。
That is, according to the present invention,
A lift pin that is attached to an elevating mechanism that lifts the substrate during transportation of the substrate in a semiconductor manufacturing apparatus and that supports the substrate,
comprising a first member that contacts the substrate when the substrate is lifted, and a second member that is connected to the lifting mechanism;
the first member has a hardness lower than that of the substrate;
The second member is characterized by having a higher strength than the first member,
Lift pins are provided.

本発明によれば、強度を確保し、かつ、基板に影響を及ぼさないリフトピン、半導体製造装置およびリフトピン製造方法が提供できる。 According to the present invention, it is possible to provide a lift pin, a semiconductor manufacturing apparatus, and a lift pin manufacturing method that ensure strength and do not affect the substrate.

本実施形態の半導体製造装置の内部空間の概略構成を示す図。The figure which shows the schematic structure of the internal space of the semiconductor manufacturing apparatus of this embodiment. 本実施形態の半導体製造装置において基板を搬送する際のリフトピンの動作例を示す図。FIG. 5 is a diagram showing an example of the operation of lift pins when transferring a substrate in the semiconductor manufacturing apparatus of the present embodiment; 本実施形態の半導体製造装置において基板を搬送する際のリフトピンの動作例を示す図。FIG. 5 is a diagram showing an example of the operation of lift pins when transferring a substrate in the semiconductor manufacturing apparatus of the present embodiment; 本実施形態のリフトピンの構造の例を示す断面図。Sectional drawing which shows the example of the structure of the lift pin of this embodiment. 本実施形態のリフトピンを製造する第1の製造方法を示す図。FIG. 4 is a diagram showing a first manufacturing method for manufacturing the lift pin of the present embodiment; 本実施形態のリフトピンを製造する第2の製造方法を示す図。The figure which shows the 2nd manufacturing method which manufactures the lift pin of this embodiment.

以下、本発明を、実施形態をもって説明するが、本発明は後述する実施形態に限定されるものではない。なお、以下に参照する各図においては、共通する要素について同じ符号を用い、適宜その説明を省略するものとする。 The present invention will be described below with reference to embodiments, but the present invention is not limited to the embodiments described later. In addition, in each figure referred to below, the same reference numerals are used for common elements, and description thereof will be omitted as appropriate.

なお、以下に説明する実施形態では、半導体製造装置1は、基板Wとガス状の前駆体材料とを反応させて、基板Wの表面に半導体材料を結晶成長させる、CVD(Chemical Vapor Deposition)法を採用した装置を例に説明するが、特に実施形態を限定するものではない。したがって、スパッタリング法、ALD(Atomic Layer Deposition)法やMBE(Molecular Beam Epitaxy)法など、種々の結晶成長を行う半導体製造装置1に対して、本実施形態を適用することができる。 In the embodiment described below, the semiconductor manufacturing apparatus 1 uses a CVD (Chemical Vapor Deposition) method in which a semiconductor material is crystal-grown on the surface of the substrate W by reacting the substrate W with a gaseous precursor material. will be described as an example, but the embodiment is not particularly limited. Therefore, the present embodiment can be applied to the semiconductor manufacturing apparatus 1 that performs various crystal growths such as the sputtering method, the ALD (Atomic Layer Deposition) method, the MBE (Molecular Beam Epitaxy) method, and the like.

図1は、本実施形態の半導体製造装置1の内部空間の概略構成を示す図である。本実施形態の半導体製造装置1は、内部の空間の所定の位置において、基板Wと前駆体材料とを反応させて、基板Wの表面に半導体材料を結晶成長させる。そのため、基板Wは、半導体製造装置1内を随時搬送され、ホルダなどに載置される。 FIG. 1 is a diagram showing a schematic configuration of an internal space of a semiconductor manufacturing apparatus 1 of this embodiment. In the semiconductor manufacturing apparatus 1 of the present embodiment, the substrate W and the precursor material are caused to react with each other at a predetermined position in the internal space, and the semiconductor material is crystal-grown on the surface of the substrate W. As shown in FIG. Therefore, the substrate W is transported through the semiconductor manufacturing apparatus 1 at any time and placed on a holder or the like.

基板Wの搬送は、リフトピン10によってホルダから持ち上げられ、後述するアームなどによって行われうる。リフトピン10は、基板Wを裏面側から支持し、昇降機構によって上下方向に移動する部品である。本実施形態の半導体製造装置1は、基板Wを安定的に支持するために、図1に示すように、少なくとも3のリフトピン10a、10b、10cを備える。 The substrate W can be lifted from the holder by lift pins 10 and transported by an arm or the like, which will be described later. The lift pins 10 are components that support the substrate W from the back side and are moved vertically by an elevating mechanism. The semiconductor manufacturing apparatus 1 of this embodiment includes at least three lift pins 10a, 10b, and 10c in order to stably support the substrate W, as shown in FIG.

次に、基板Wの搬送について、図2および図3を以て説明する。図2および図3は、本実施形態の半導体製造装置1において基板Wを搬送する際のリフトピン10の動作例を示す図である。なお、以下に説明する実施形態では、リフトピン10の数が3つである半導体製造装置1を例示しているが、特に実施形態を限定するものではない。 Next, transfer of the substrate W will be described with reference to FIGS. 2 and 3. FIG. 2 and 3 are diagrams showing an operation example of the lift pins 10 when transferring the substrate W in the semiconductor manufacturing apparatus 1 of this embodiment. In addition, in the embodiment described below, the semiconductor manufacturing apparatus 1 having three lift pins 10 is exemplified, but the embodiment is not particularly limited.

まず、図2について説明する。図2は、本実施形態のリフトピン10の動作例の側面図であり、図2(a)は基板Wがホルダ20に載置された状態を示し、図2(b)は基板Wがホルダ20から持ち上げられた状態を示している。 First, FIG. 2 will be described. 2A and 2B are side views of an operation example of the lift pins 10 of the present embodiment. FIG. 2A shows a state in which the substrate W is placed on the holder 20, and FIG. It shows a state lifted from

図2(a)に示すように、ホルダ20は、リフトピン10a~10cが通り抜ける穴が設けられており、昇降機構によってリフトピン10a~10cは、図中の矢印の方向に移動する。リフトピン10a~10cが上昇すると、各リフトピン10はホルダ20に載置された基板Wに当接し、さらに上昇することで、基板Wがホルダ20から持ち上がる。したがって、基板Wは図2(b)に示すような状態となり、その後、アームなどによって搬送される。なお、ホルダ20は、基板Wの結晶成長プロセスにおいて加熱されることがあり、熱の均一性の観点から、リフトピン10が通る穴は小さいほうが好ましい。そのため、リフトピン10の形状も、一般に細いものとなる。 As shown in FIG. 2(a), the holder 20 is provided with holes through which the lift pins 10a-10c pass, and the lifting mechanism moves the lift pins 10a-10c in the directions of the arrows in the drawing. When the lift pins 10a to 10c are lifted, each lift pin 10 contacts the substrate W placed on the holder 20, and further lifts the substrate W from the holder 20. As shown in FIG. Accordingly, the substrate W is brought into the state shown in FIG. 2(b), and then transported by an arm or the like. Note that the holder 20 may be heated during the crystal growth process of the substrate W, and from the viewpoint of heat uniformity, it is preferable that the holes through which the lift pins 10 pass are small. Therefore, the shape of the lift pin 10 is generally thin.

次に、図3について説明する。図3は、本実施形態のリフトピン10の動作例の斜視図であり、図3(a)は基板Wがホルダ20に載置された状態を示し、図3(b)は基板Wがホルダ20から持ち上げられた状態を示している。すなわち、図3(a)は図2(a)に対応し、図3(b)は図2(b)に対応している。なお、図3においては、図面の見やすさの観点から、図2におけるホルダ20が省略されている点に留意されたい。 Next, FIG. 3 will be described. 3A and 3B are perspective views of an operation example of the lift pins 10 of the present embodiment. FIG. 3A shows a state in which the substrate W is placed on the holder 20, and FIG. It shows a state lifted from That is, FIG. 3(a) corresponds to FIG. 2(a), and FIG. 3(b) corresponds to FIG. 2(b). It should be noted that in FIG. 3, the holder 20 in FIG. 2 is omitted from the viewpoint of visibility of the drawing.

図3(a)に示すように、リフトピン10a~10cが図3(a)中の矢印の方向に上昇することで、基板Wに当接され、基板Wが持ち上げられる。このとき、図3(b)に示すように基板Wは、アーム30に支持される高さまで持ち上げられる。その後、アーム30は、図3(b)中の矢印の方向に移動し、基板Wの下方に挿入される。アーム30が基板Wの下方に挿入された後、リフトピン10a~10cが下降すると、基板Wがアーム30上に載置され、アーム30が移動することによって、基板Wが搬送される。 As shown in FIG. 3(a), the lift pins 10a to 10c are raised in the direction of the arrow in FIG. 3(a) to come into contact with the substrate W and the substrate W is lifted. At this time, the substrate W is lifted up to a height supported by the arm 30 as shown in FIG. 3(b). After that, the arm 30 moves in the direction of the arrow in FIG. When the lift pins 10a to 10c are lowered after the arm 30 is inserted under the substrate W, the substrate W is placed on the arm 30, and the substrate W is transported by the arm 30 moving.

ところで、基板Wの持ち上げ時のリフトピン10との接触によって基板Wに傷が付くと、半導体デバイスの歩留まりが低下する。したがって、リフトピン10の先端部分は、基板Wよりも柔らかい材料で構成されていることが好ましい。一方で、リフトピン10は細長い形状をしていることから、繰り返しの搬送プロセスに耐えうる強度を有していることが好ましい。また、半導体製造装置1の内部空間の清浄性を維持するために、リフトピン10の材料は、高温、高真空に耐え、かつ、前駆体材料に対して耐腐食性を有していることが求められる。そのため、リフトピン10は、以下に説明するような実施形態の構造とすることが好ましい。 Incidentally, if the substrate W is damaged due to contact with the lift pins 10 when the substrate W is lifted, the yield of semiconductor devices is lowered. Therefore, it is preferable that the tip portion of the lift pin 10 is made of a material softer than the substrate W. As shown in FIG. On the other hand, since the lift pins 10 have an elongated shape, it is preferable that they have strength enough to withstand repeated transportation processes. Further, in order to maintain the cleanliness of the internal space of the semiconductor manufacturing apparatus 1, the material of the lift pins 10 is required to withstand high temperature and high vacuum and to have corrosion resistance to the precursor material. be done. Therefore, the lift pin 10 preferably has the structure of the embodiment described below.

図4は、本実施形態のリフトピン10の構造の例を示す断面図である。本実施形態のリフトピン10は、図4(a)~(f)に示すような種々の構造を採用することができる。本実施形態のリフトピン10は、リフトピン10の先端部分を構成する第1の部材11と、リフトピン10の下方の昇降機構と接続される第2の部材12とから構成される。リフトピン10は、第2の部材12と接続される昇降機構が駆動することによって垂直方向に移動することができ、第1の部材11は、基板Wの持ち上げ時に、基板Wの裏面と当接する。 FIG. 4 is a cross-sectional view showing an example of the structure of the lift pin 10 of this embodiment. Various structures as shown in FIGS. 4(a) to 4(f) can be adopted for the lift pin 10 of the present embodiment. The lift pin 10 of this embodiment is composed of a first member 11 forming a tip portion of the lift pin 10 and a second member 12 connected to an elevating mechanism below the lift pin 10 . The lift pins 10 can be moved vertically by being driven by an elevating mechanism connected to the second member 12, and the first member 11 abuts the back surface of the substrate W when the substrate W is lifted.

図4に示すように、本実施形態の各構造例のリフトピン10は、第1の部材11と、第2の部材12とで、異なる材料を用いる。特に、先端部分を構成する第1の部材11は、基板Wよりも硬度の低い材料を用いることで、搬送プロセスにおいて基板Wを傷つけることなく、基板Wを持ち上げることができる。一般的な半導体製造プロセスにおいては、例えばSi(シリコン)基板、Ge(ゲルマニウム)基板、SiC(シリコンカーバイド)基板、サファイア基板、GaN(窒化ガリウム)基板、GaP(リン化ガリウム)基板、GaAs(ヒ化ガリウム)基板、InP(リン化インジウム)基板などの各種材料の基板が用いられる。したがって、本実施形態における第1の部材11の材料は、これらの基板材料よりも硬度の低いものを選択し得る。第1の部材11の材料には、例えば、ポリイミド樹脂、テフロン(登録商標)、ゴム、カーボングラファイトなどを用いることができるが、特に実施形態を限定するものではない。 As shown in FIG. 4 , the lift pins 10 of each structural example of the present embodiment use different materials for the first member 11 and the second member 12 . In particular, the first member 11 forming the tip portion uses a material having a lower hardness than the substrate W, so that the substrate W can be lifted without damaging the substrate W during the transfer process. In general semiconductor manufacturing processes, for example, Si (silicon) substrates, Ge (germanium) substrates, SiC (silicon carbide) substrates, sapphire substrates, GaN (gallium nitride) substrates, GaP (gallium phosphide) substrates, GaAs substrates, Substrates made of various materials such as gallium nitride) substrates and InP (indium phosphide) substrates are used. Therefore, the material of the first member 11 in this embodiment can be selected to have lower hardness than these substrate materials. For example, polyimide resin, Teflon (registered trademark), rubber, carbon graphite, or the like can be used as the material of the first member 11, but the embodiment is not particularly limited.

一方で、リフトピン10の全体を第1の部材11のように柔らかい材料で構成すると、搬送プロセスにおけるリフトピン10の強度が十分に確保されにくくなる。そこで、第2の部材12は、第1の部材11よりも強度の高い材料を用いることで、繰り返しの搬送プロセスに耐えることができる。ここで、本実施形態の説明において用いられる「強度の高い材料」とは、リフトピン10としての十分な強度が確保できること、すなわち基板Wの昇降や搬送に耐え得る強度であること、また、結晶成長プロセスにおける加熱に耐え得ることを意味する。第2の部材12の材料には、例えば、タングステン、ジルコニア、各種セラミックス材料、各種金属材料などを用いることができるが、特に実施形態を限定するものではない。 On the other hand, if the entire lift pin 10 is made of a soft material like the first member 11, it becomes difficult to ensure sufficient strength of the lift pin 10 during the transportation process. Therefore, by using a material having a higher strength than the first member 11, the second member 12 can withstand repeated transportation processes. Here, the "high-strength material" used in the description of the present embodiment means that sufficient strength can be secured as the lift pins 10, that is, that the strength is enough to withstand the lifting and transportation of the substrate W, and that the crystal growth It means that it can withstand heating in the process. As the material of the second member 12, for example, tungsten, zirconia, various ceramic materials, various metal materials, etc. can be used, but the embodiment is not particularly limited.

以下では、図4(a)~(f)に示すリフトピン10の各構造の詳細について説明する。 Details of each structure of the lift pin 10 shown in FIGS. 4(a) to 4(f) will be described below.

まず、図4(a)について説明する。図4(a)は、本実施形態のリフトピン10の構造の第1の例を示している。第1の例のリフトピン10は、図4(a)に示すように、第1の部材11の下部に第2の部材12が配置された構造である。第1の例において、第1の部材11と、第2の部材12とは、接着剤などによって固定することができる。第1の例のリフトピンは、第1の部材11を柔らかい材料で構成し、第2の部材12を強度の高い材料で構成していることから、基板Wへの傷を抑制しつつ、リフトピン10の強度を向上することができる。 First, FIG. 4A will be described. FIG. 4(a) shows a first example of the structure of the lift pin 10 of this embodiment. The lift pin 10 of the first example has a structure in which a second member 12 is arranged below a first member 11, as shown in FIG. 4(a). In a first example, the first member 11 and the second member 12 can be fixed by an adhesive or the like. In the lift pin of the first example, the first member 11 is made of a soft material and the second member 12 is made of a high-strength material. can improve the strength of

次に、図4(b)について説明する。図4(b)は、本実施形態のリフトピン10の構造の第2の例を示している。第2の例のリフトピン10は、図4(b)に示すように、第2の部材12の少なくとも先端部分が第1の部材11で覆われた構造である。すなわち、第2の例のリフトピン10は、第1の部材11の凹部に、第2の部材12が嵌合した構造である。図4(b)に示した構造とすることで、第2の例のリフトピン10は、第1の部材11に第2の部材12が嵌め込まれ、かつ、各部材が接触する面積を大きくできるため、第1の例のリフトピン10よりも強度を向上することができる。 Next, FIG. 4B will be described. FIG. 4B shows a second example of the structure of the lift pin 10 of this embodiment. The lift pin 10 of the second example has a structure in which at least the tip portion of the second member 12 is covered with the first member 11, as shown in FIG. 4(b). That is, the lift pin 10 of the second example has a structure in which the second member 12 is fitted into the concave portion of the first member 11 . By adopting the structure shown in FIG. 4B, the lift pin 10 of the second example has the second member 12 fitted in the first member 11, and the contact area between the members can be increased. , the strength can be improved more than the lift pin 10 of the first example.

次に、図4(c)について説明する。図4(c)は、本実施形態のリフトピン10の構造の第3の例を示している。第3の例のリフトピン10は、図4(c)に示すように、円筒形状の第2の部材12の中空部分に、第1の部材11が嵌合した構造である。図4(c)に示した構造とすることで、第3の例のリフトピン10は、第1の部材11が第2の部材12に嵌め込まれ、かつ、各部材が接触する面積を大きくできるため、第1の例のリフトピン10よりも強度を向上することができる。 Next, FIG. 4(c) will be described. FIG. 4(c) shows a third example of the structure of the lift pin 10 of this embodiment. The lift pin 10 of the third example has a structure in which a first member 11 is fitted in a hollow portion of a cylindrical second member 12, as shown in FIG. 4(c). By adopting the structure shown in FIG. 4C, the lift pin 10 of the third example has the first member 11 fitted into the second member 12, and the contact area between the members can be increased. , the strength can be improved more than the lift pin 10 of the first example.

次に、図4(d)について説明する。図4(d)は、本実施形態のリフトピン10の構造の第4の例を示している。第4の例のリフトピン10は、図4(d)に示すように、第1の部材11が窪み部分を有しており、第2の部材12の一部が、第1の部材11の窪み部分に嵌合した構造である。なお、第4の例のリフトピン10も、図4(c)に示した第3の例のリフトピン10と同様に、第2の部材12が中空部分を有する形状とすることができる。すなわち、第4の例のリフトピン10は、第1の部材11と、第2の部材12とが、相互に嵌合している構造となる。図4(d)に示した構造とすることで、第4の例のリフトピン10は、第1の部材11と第2の部材12とを相互に嵌め込んで固定することができ、かつ、各部材が接触する面積を大きくできるため、第3の例のリフトピン10よりも強度を向上することができる。 Next, FIG.4(d) is demonstrated. FIG. 4(d) shows a fourth example of the structure of the lift pin 10 of this embodiment. In the lift pin 10 of the fourth example, as shown in FIG. It is a structure that fits in the part. It should be noted that the lift pin 10 of the fourth example can also have a shape in which the second member 12 has a hollow portion, like the lift pin 10 of the third example shown in FIG. 4(c). That is, the lift pin 10 of the fourth example has a structure in which the first member 11 and the second member 12 are fitted together. By adopting the structure shown in FIG. 4(d), the lift pin 10 of the fourth example can be fixed by fitting the first member 11 and the second member 12 to each other. Since the contact area of the member can be increased, the strength can be improved more than the lift pin 10 of the third example.

次に、図4(e)について説明する。図4(e)は、本実施形態のリフトピン10の構造の第5の例を示している。第5の例のリフトピン10は、図4(e)に示すように、図4(b)に示したリフトピン10の構造において、第1の部材11と、第2の部材12とが長手方向において接触する面に凹凸形状を有した構造である。図4(e)に示した構造とすることで、第5の例のリフトピン10は、第1の部材11と第2の部材12とを摩擦によって固定することができるため、第2の例のリフトピン10よりも強度を向上することができる。 Next, FIG. 4(e) will be described. FIG. 4(e) shows a fifth example of the structure of the lift pin 10 of this embodiment. As shown in FIG. 4E, the lift pin 10 of the fifth example has the structure of the lift pin 10 shown in FIG. 4B, in which the first member 11 and the second member 12 are It is a structure having an uneven shape on the contact surface. With the structure shown in FIG. 4(e), the lift pin 10 of the fifth example can fix the first member 11 and the second member 12 by friction. Strength can be improved more than the lift pin 10 .

次に、図4(f)について説明する。図4(f)は、本実施形態のリフトピン10の構造の第6の例を示している。第6の例のリフトピン10は、図4(f)に示すように、図4(c)に示したリフトピン10の構造において、第1の部材11と、第2の部材12とが長手方向において接触する面に凹凸形状を有した構造である。図4(f)に示した構造とすることで、第6の例のリフトピン10は、第1の部材11と第2の部材12とを摩擦によって固定することができるため、第3の例のリフトピン10よりも強度を向上することができる。 Next, FIG. 4(f) will be described. FIG. 4(f) shows a sixth example of the structure of the lift pin 10 of this embodiment. As shown in FIG. 4(f), the lift pin 10 of the sixth example has the structure of the lift pin 10 shown in FIG. 4(c), in which the first member 11 and the second member 12 are It is a structure having an uneven shape on the contact surface. With the structure shown in FIG. 4(f), the lift pin 10 of the sixth example can fix the first member 11 and the second member 12 by friction. Strength can be improved more than the lift pin 10 .

図4に説明した構造とすることによって、本実施形態のリフトピン10は、基板Wを傷つけず、かつ、搬送プロセスの繰り返しに耐える強度を有することができる。なお、図4(b)~(f)のリフトピン10においても、第1の部材11と、第2の部材12とを、接着剤などで接着して固定することができる。 By adopting the structure illustrated in FIG. 4, the lift pins 10 of the present embodiment do not damage the substrate W and can have the strength to withstand repeated transfer processes. 4(b) to 4(f), the first member 11 and the second member 12 can be adhered and fixed with an adhesive or the like.

次に、本実施形態のリフトピン10を製造する各種方法について、図5および図6を以て説明する。なお、本実施形態のリフトピン10は、図5および図6に示す以外の方法によっても製造することができ、以下の説明は、特に実施形態を限定するものではない。 Next, various methods for manufacturing the lift pin 10 of this embodiment will be described with reference to FIGS. 5 and 6. FIG. The lift pin 10 of this embodiment can be manufactured by a method other than that shown in FIGS. 5 and 6, and the following description does not particularly limit the embodiment.

図5は、本実施形態のリフトピン10を製造する第1の製造方法を示す図である。なお、図5に示す第1の製造方法は、特に図4(c)や図4(d)の構造のリフトピン10を製造するのに適している。 FIG. 5 is a diagram showing a first manufacturing method for manufacturing the lift pin 10 of this embodiment. The first manufacturing method shown in FIG. 5 is particularly suitable for manufacturing the lift pins 10 having the structures shown in FIGS. 4(c) and 4(d).

第1の製造方法では、まず図5(a)に示すように、第2の部材12を円筒形状に加工する工程を行う。なお、第2の部材12は、加工されたものを用意することで、図5(a)の工程としてもよい。 In the first manufacturing method, first, as shown in FIG. 5A, a step of processing the second member 12 into a cylindrical shape is performed. Note that the second member 12 may be prepared in the process of FIG. 5(a) by preparing a processed one.

次に、図5(b)のように、液状の第1の部材11を、第2の部材12の中空部分に注入する工程を行う。その後、図5(c)では、注入された第1の部材11を硬化させる工程を行う。 Next, as shown in FIG. 5B, a step of injecting the liquid first member 11 into the hollow portion of the second member 12 is performed. After that, in FIG. 5C, a step of curing the injected first member 11 is performed.

さらにその後、図5(d)に示すように、硬化した第1の部材11を所定の形状に形成する工程を行う。以上の図5(a)~(d)に示した工程を行うことで、図4(b)に示したような本実施形態のリフトピン10を製造することができる。 After that, as shown in FIG. 5D, a step of forming the cured first member 11 into a predetermined shape is performed. By performing the steps shown in FIGS. 5A to 5D, the lift pin 10 of this embodiment as shown in FIG. 4B can be manufactured.

続いて、図6について説明する。図6は、本実施形態のリフトピン10を製造する第2の製造方法を示す図である。なお、図6では、図4(f)に示したリフトピン10を製造する方法を例に説明しているが特に実施形態を限定するものではなく、他の構造のリフトピン10を製造する場合であっても図6の製造方法を採用することができる。 Next, FIG. 6 will be described. FIG. 6 is a diagram showing a second manufacturing method for manufacturing the lift pin 10 of this embodiment. In FIG. 6, the method of manufacturing the lift pin 10 shown in FIG. 4(f) is described as an example, but the embodiment is not particularly limited, and the lift pin 10 having another structure may be manufactured. However, the manufacturing method of FIG. 6 can be adopted.

第2の製造方法では、まず図6(a)に示すように、第1の部材11と、第2の部材12とを所定の形状に加工する工程を行う。図6(a)の例では、第1の部材11を凸型部分を有する形状に加工し、第2の部材12を凹型部分を有する形状に加工する。 In the second manufacturing method, first, as shown in FIG. 6A, a step of processing the first member 11 and the second member 12 into predetermined shapes is performed. In the example of FIG. 6A, the first member 11 is processed into a shape having a convex portion, and the second member 12 is processed into a shape having a concave portion.

また、図6(a)の工程では、第1の部材11の凸型部分や、第2の部材12の凹型部分の長手方向の面、すなわち対になる部材と接触する面が凹凸形状となるように加工してもよい。このようにして、凸型部分や凹型部分の側面を凹凸形状に加工することで、図4(f)に示したようなリフトピン10を製造することができる。 Further, in the process of FIG. 6A, the convex portion of the first member 11 and the longitudinal surface of the concave portion of the second member 12, that is, the surface in contact with the member to be paired becomes uneven. It can be processed as In this way, by processing the side surfaces of the convex portion and the concave portion into an uneven shape, the lift pin 10 as shown in FIG. 4(f) can be manufactured.

その後、第2の部材12の凹型部分に第1の部材11を嵌合させる工程を行うことで、図6(b)に示すように、本実施形態のリフトピン10を製造することができる。なお、第2の製造方法における嵌合させる工程では、第1の部材11と第2の部材12とが接触する面に接着剤を塗布してもよく、これによって、リフトピン10の強度をさらに向上させることができる。 After that, by performing a step of fitting the first member 11 to the concave portion of the second member 12, the lift pin 10 of the present embodiment can be manufactured as shown in FIG. 6(b). In addition, in the fitting step in the second manufacturing method, an adhesive may be applied to the contact surfaces of the first member 11 and the second member 12, thereby further improving the strength of the lift pin 10. can be made

以上、説明した本発明の実施形態によれば、強度を確保し、かつ、基板に影響を及ぼさないリフトピン、半導体製造装置およびリフトピン製造方法を提供することができる。 According to the embodiments of the present invention described above, it is possible to provide a lift pin, a semiconductor manufacturing apparatus, and a lift pin manufacturing method that ensure strength and do not affect the substrate.

以上、本発明について実施形態をもって説明してきたが、本発明は上述した実施形態に限定されるものではなく、当業者が推考しうる実施態様の範囲内において、本発明の作用・効果を奏する限り、本発明の範囲に含まれるものである。 As described above, the present invention has been described with embodiments, but the present invention is not limited to the above-described embodiments, and within the scope of embodiments that can be conceived by those skilled in the art, as long as the actions and effects of the present invention are exhibited. , are within the scope of the present invention.

1…半導体製造装置、
10…リフトピン、
11…第1の部材、
12…第2の部材、
20…ホルダ、
30…アーム、
W…基板
1 ... semiconductor manufacturing equipment,
10... lift pin,
11 ... the first member,
12 ... second member,
20... Holder,
30... arm,
W... Substrate

特開2016-225444号公報JP 2016-225444 A

Claims (11)

半導体製造装置において基板の搬送時に前記基板を持ち上げる昇降機構に取り付けられ、前記基板を支持するリフトピンであって、
前記基板の持ち上げ時に当該基板と当接する先端部分が丸みを有する第1の部材と、前記昇降機構と接続される第2の部材とから構成され、
前記第1の部材は、前記基板よりも硬度が低く、かつ、当該リフトピンの直径よりも長手方向の寸法が大きく、
前記第2の部材は、前記第1の部材よりも強度が高く、前記第2の部材の長手方向の全外面を長手方向に前記第1の部材が覆うか、又は前記第1の部材が前記第2の部材の内部を長手方向に全長にわたり延びることを特徴とする、
リフトピン。
A lift pin that is attached to an elevating mechanism that lifts the substrate during transportation of the substrate in a semiconductor manufacturing apparatus and that supports the substrate,
It comprises a first member having a rounded tip portion that abuts on the substrate when the substrate is lifted, and a second member connected to the elevating mechanism,
the first member has a hardness lower than that of the substrate and a longitudinal dimension larger than the diameter of the lift pin;
The second member has a higher strength than the first member, and either the first member longitudinally covers the entire longitudinal outer surface of the second member, or the first member covers the extending longitudinally over the entire length of the interior of the second member,
lift pin.
(削除)(delete) (削除)(delete) (削除)(delete) 前記第1の部材と、前記第2の部材とが長手方向に接触する面に凹凸を有することを特徴とする、請求項1に記載のリフトピン。 2. The lift pin according to claim 1, wherein the surfaces of the first member and the second member in contact with each other in the longitudinal direction are uneven. 請求項1または5に記載のリフトピンを少なくとも3つ備える、半導体製造装置。 A semiconductor manufacturing apparatus comprising at least three lift pins according to claim 1 or 5. (削除)(delete) 半導体製造装置において基板の搬送時に前記基板を持ち上げる昇降機構に取り付けられ、前記基板を支持するリフトピンの製造方法であって、
前記基板よりも硬度が低い材料を、凸型部分を有し、前記凸型部分の反対側の先端部分が丸みを有し、かつ、当該リフトピンの直径よりも長手方向の寸法が大きい第1の部材として加工する第1の工程と、
前記第1の部材よりも強度が高い材料を、凹型部分を有する第2の部材として加工する第2の工程と、
前記第1の部材と、前記第2の部材とを嵌合する工程と
を含み、
前記第1の部材が前記第2の部材の内部を長手方向に全長にわたり延びることを特徴とする、リフトピン製造方法。
A method for manufacturing a lift pin that is attached to an elevating mechanism that lifts a substrate during transportation of the substrate in a semiconductor manufacturing apparatus and that supports the substrate,
A first lift pin made of a material having a hardness lower than that of the substrate and having a convex portion, a tip portion opposite to the convex portion having a radius, and a longitudinal dimension larger than the diameter of the lift pin. A first step of processing as a member;
a second step of processing a material stronger than the first member as a second member having a recessed portion;
fitting the first member and the second member,
A method of manufacturing a lift pin, wherein the first member extends longitudinally the entire length inside the second member.
前記第1の工程は、前記凸型部分の長手方向の面を、凹凸形状に加工し、
前記第2の工程は、前記凹型部分の長手方向の面を、凹凸形状に加工する、
請求項8に記載のリフトピン製造方法。
The first step includes processing a longitudinal surface of the convex portion into an uneven shape,
In the second step, the longitudinal surface of the recessed portion is processed into an uneven shape.
The lift pin manufacturing method according to claim 8.
半導体製造装置において基板の搬送時に前記基板を持ち上げる昇降機構に取り付けられ、前記基板を支持するリフトピンの製造方法であって、
前記基板よりも硬度が低い材料を、凹型部分を有し、前記凹型部分の反対側の先端部分が丸みを有し、かつ、当該リフトピンの直径よりも長手方向の寸法が大きい第1の部材として加工する第1の工程と、
前記第1の部材よりも強度が高い材料を、凸型部分を有する第2の部材として加工する第2の工程と、
前記第1の部材と、前記第2の部材とを嵌合する工程と
を含み、
前記第2の部材の長手方向の全外面を長手方向に前記第1の部材が覆うことを特徴とする、リフトピン製造方法。
A method for manufacturing a lift pin that is attached to an elevating mechanism that lifts a substrate during transportation of the substrate in a semiconductor manufacturing apparatus and that supports the substrate,
A material having a hardness lower than that of the substrate is used as a first member having a concave portion, a rounded tip opposite to the concave portion, and having a longitudinal dimension larger than the diameter of the lift pin. a first step of processing;
a second step of processing a material stronger than the first member as a second member having a convex portion;
fitting the first member and the second member,
A method of manufacturing a lift pin, wherein the first member longitudinally covers the entire longitudinal outer surface of the second member.
前記第1の工程は、前記凹型部分の長手方向の面を、凹凸形状に加工し、
前記第2の工程は、前記凸型部分の長手方向の面を、凹凸形状に加工する、
請求項10に記載のリフトピン製造方法。
The first step includes processing a longitudinal surface of the recessed portion into an uneven shape,
In the second step, the longitudinal surface of the convex portion is processed into an uneven shape.
11. The method of manufacturing a lift pin according to claim 10.
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