WO2022054873A1 - 配線基板を製造する方法、及び配線基板 - Google Patents

配線基板を製造する方法、及び配線基板 Download PDF

Info

Publication number
WO2022054873A1
WO2022054873A1 PCT/JP2021/033172 JP2021033172W WO2022054873A1 WO 2022054873 A1 WO2022054873 A1 WO 2022054873A1 JP 2021033172 W JP2021033172 W JP 2021033172W WO 2022054873 A1 WO2022054873 A1 WO 2022054873A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
mass
pretreatment liquid
metal layer
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/033172
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
慶 東ヶ崎
健一 岩下
敬司 小野
真生 成田
一行 満倉
正也 鳥羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Priority to US18/044,789 priority Critical patent/US20240015889A1/en
Priority to KR1020237008772A priority patent/KR20230080401A/ko
Priority to CN202180061938.2A priority patent/CN116209791A/zh
Priority to JP2022547650A priority patent/JPWO2022054873A1/ja
Publication of WO2022054873A1 publication Critical patent/WO2022054873A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1208—Pretreatment of the circuit board, e.g. modifying wetting properties; Patterning by using affinity patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/241—Reinforcing of the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask

Definitions

  • This disclosure relates to a method of manufacturing a wiring board and a wiring board.
  • the wiring board that constitutes an electronic device is required to have wiring having a minute width in order to meet the demands for miniaturization, weight reduction, and high speed of the electronic device.
  • a semi-additive (SAP) method and a modified semi-additive (MSAP) method are widely used (Patent Document 1). These methods generally include the step of forming a copper plating layer on the metal layer by electrolytic plating.
  • a minute black part having a width of less than 0.3 ⁇ m is observed in the copper plating layer near the interface between the metal layer and the copper plating layer. May be done.
  • This black part is presumed to be a minute void. Since the black part is an extremely minute void, it does not easily affect the characteristics of the wiring itself, but as the width of the wiring becomes further miniaturized, if there are many minute voids, the copper plating layer and the metal layer adhere to each other. There is a concern that sex may be insufficient.
  • One aspect of the present disclosure is the generation of minute black portions in the vicinity of the interface between the metal layer and the copper plating layer when the wiring substrate is manufactured by a method including forming a copper plating layer on the metal layer by electrolytic plating. Regarding the method of suppressing.
  • One aspect of the present disclosure is to provide the resist layer with a pattern including an opening in which the metal layer is exposed by a step of forming a resist layer on a metal layer provided on a support and exposure and development of the resist layer.
  • the present invention relates to a step of forming and a method of manufacturing a wiring board including the steps in this order.
  • the mass change rate of the resist layer is -2.0% by mass or more. Be selected.
  • W0 is the mass of the resist layer before being immersed in the pretreatment liquid
  • W1 is a laminate having a resist layer and a copper foil covering the entire one side of the resist layer. It is the mass of the resist layer after being immersed in the pretreatment liquid at the pretreatment temperature for 30 minutes.
  • a wiring substrate is manufactured by a method including forming a copper plating layer on a metal layer by electrolytic plating, a minute black portion near the interface between the metal layer and the copper plating layer is formed.
  • a method of suppressing the occurrence of the above is provided.
  • the present invention is not limited to the following examples.
  • FIG. 1 is a cross-sectional view showing an example of a method for manufacturing a wiring board.
  • the methods shown in FIG. 1 include a step of forming a metal layer 20 on one main surface of a plate-shaped support 1, a step of forming a resist layer 3 on the metal layer 20, and exposure and exposure of the resist layer 3.
  • a pretreatment liquid having a predetermined pretreatment temperature.
  • the pretreatment step includes a step and a step of removing the exposed metal layer 20 to form a wiring substrate 10 having a wiring 2 having the metal layer 20 and the copper plating layer 21 and a support 1.
  • the outermost layer on the side of the support 1 on which the metal layer 20 is provided is usually mainly composed of an insulating layer.
  • the insulating layer provided as the outermost layer of the support 1 may be an insulating resin layer such as a build-up layer.
  • the support 1 may include wiring connected to wiring 2.
  • the support 1 may include an insulating substrate which is a laminated board formed of a plurality of prepregs.
  • the metal layer 20 is a layer that functions as a seed layer for electrolytic plating.
  • the metal layer 20 may be, for example, a metal plating layer formed by electrolytic plating, a metal foil such as a copper foil, a layer formed by vapor deposition such as spatter, or a metal sintered layer.
  • the metal sintered layer is a layer formed by heating a coating film containing metal particles and sintering the metal particles.
  • the metal constituting the metal layer 20 may contain, for example, at least one metal selected from the group consisting of copper, gold, silver, tungsten, molybdenum, tin, cobalt, chromium, iron, and zinc.
  • the metal layer 20 may be a single layer or may be composed of two or more layers.
  • the thickness of the metal layer 20 may be, for example, 0.1 to 2.0 ⁇ m.
  • the arithmetic surface roughness Ra of the surface of the metal layer 20 opposite to the support 1 may be 0.20 to 0.30 ⁇ m.
  • the average height Rc of the surface of the metal layer 20 opposite to the support 1 may be 0.7 to 1.3 ⁇ m.
  • the resist layer 3 may be formed from a photosensitive resist material usually used for forming wiring, which is selected based on the mass change rate due to immersion in the pretreatment liquid as described later. can.
  • the thickness of the resist layer 3 may be, for example, 10 to 50 ⁇ m.
  • the resist material for forming the resist layer 3 may be, for example, a photosensitive resin composition containing a binder polymer, a photopolymerizable compound having an ethylenically unsaturated bond, and a photopolymerization initiator.
  • the binder polymer may be, for example, a copolymer containing benzyl (meth) acrylate or a derivative thereof, styrene or a styrene derivative, a (meth) acrylic acid alkyl ester, and (meth) acrylic acid as a monomer unit.
  • benzyl (meth) acrylate derivative constituting the binder polymer examples include 4-methylbenzyl (meth) acrylate, 4-ethylbenzyl (meth) acrylate, 4-tertbutylbenzyl (meth) acrylate, and 4-methoxybenzyl ( Examples include 4-ethoxybenzyl (meth) acrylate, 4-hydroxylbenzyl (meth) acrylate, and 4-chlorobenzyl (meth) acrylate.
  • styrene derivative constituting the binder polymer examples include vinyltoluene, p-methylstyrene, and p-chlorostyrene.
  • the (meth) acrylic acid alkyl ester constituting the binder polymer may be an ester compound formed of (meth) acrylic acid and a linear or branched aliphatic alcohol having 1 to 12 carbon atoms.
  • the aliphatic alcohol may have 1 to 8 carbon atoms or 1 to 4 carbon atoms.
  • Specific examples of the (meth) acrylic acid alkyl ester include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate, and (meth).
  • Trt-butyl acrylate pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate.
  • the proportion of the monomer unit derived from the benzyl (meth) acrylate or its derivative in the binder polymer is 50 to 80% by mass, 50 to 75% by mass, 50 to 70% by mass, or 50 to 65% by mass based on the mass of the binder polymer. May be%.
  • the proportion of the monomer unit derived from styrene or the styrene derivative in the binder polymer may be 5 to 40% by mass or 5 to 35% by mass based on the mass of the binder polymer.
  • the proportion of the monomer unit derived from the (meth) acrylic acid alkyl ester in the binder polymer is 1 to 20% by mass, 1 to 15% by mass, 1 to 10% by mass, or 1 to 5% by mass based on the mass of the binder polymer. May be.
  • the proportion of the monomer unit derived from (meth) acrylic acid in the binder polymer may be 5 to 30% by mass, 5 to 25% by mass, or 10 to 25% by mass with respect to the mass of the binder polymer.
  • the weight average molecular weight (Mw) of the binder polymer may be 20,000 to 150,000, 30,000 to 100,000, 40,000 to 80,000, or 40,000 to 60,000.
  • the weight average molecular weight here means a standard polystyrene-equivalent value determined by gel permeation chromatography (GPC).
  • the acid value (mgKOH / g) of the binder polymer may be 13 to 78, 39 to 65, or 52 to 62.
  • the acid value here means the amount (mg) of potassium hydroxide required for neutralization of 1 g of the binder polymer.
  • the photopolymerizable compound having an ethylenically unsaturated bond include bisphenol A (meth) acrylate compound, hydrogenated bisphenol A (meth) acrylate compound, polyalkylene glycol (meth) acrylate, urethane monomer, and pentaerythritol. Examples thereof include (meth) acrylate and trimethyl propane (meth) acrylate. These may be used alone or in combination of two or more.
  • the bisphenol A-based di (meth) acrylate compound may be, for example, a compound represented by the following general formula (1).
  • R independently represents a hydrogen atom or a methyl group.
  • EO and PO represent an oxyethylene group and an oxypropylene group, respectively.
  • m 1 , m 2 , n 1 , and n 2 independently indicate 0 to 40, m 1 + m 2 is 1 to 40, and n 1 + n 2 is 0 to 20.
  • Either EO or PO may be on the phenolic hydroxyl group side.
  • m 1 , m 2 , n 1 and n 2 indicate the number of EO or PO, respectively.
  • a compound having m 1 + m 2 on average of 5 or less and a compound having m 1 + m 2 having an average of 6 to 40 may be combined.
  • the polyalkylene glycol (meth) acrylate may be a compound represented by the following formula (2).
  • a bisphenol A-based di (meth) acrylate compound and a compound represented by the following formula (2) may be combined.
  • R 14 and R 15 each independently represent a hydrogen atom or a methyl group
  • EO and PO have the same meanings as above
  • s 1 indicates 1 to 30, and r 1 and r 2 are 0, respectively. It indicates ⁇ 30, and r 1 + r 2 is 1 to 30.
  • photopolymerization initiator examples include benzophenone, N, N'-tetramethyl-4,4'-diaminobenzophenone (Michlerketone), N, N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-.
  • Aromatic ketones such as -1; 2-ethylanthraquinone, phenanthrenquinone, 2-tert-butyl anthraquinone, octamethylanthraquinone, 1,2-benz anthraquinone, 2,3-benz anthraquinone, 2-phenylanthraquinone, 2,3- Phenyls such as diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenantharaquinone, 2-methyl1,4-naphthoquinone, and 2,3-dimethylanthr
  • Imidazole dimer 2- (o-chlorophenyl) -4,5-di (methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-diphenylimidazole dimer, 2- (o) 2,4,5-Triarylimidazole dimer such as -methoxyphenyl) -4,5-diphenylimidazole dimer and 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer; 9 Examples include -phenylaclydin and an acridin derivative such as 1,7-bis (9,9'-acrydinyl) heptane; N-phenylglycine; N-phenylglycine derivative; and coumarin compounds.
  • the photopolymerization initiator may contain a 2,4,5-triarylimidazole dimer, particularly a 2- (O-chlorophenyl) -4,5-diphenylimidazole dimer.
  • the content of the binder polymer in the photosensitive resin composition is 40 to 80 parts by mass, 45 to 75 parts by mass, or 50 to 70 parts by mass with respect to 100 parts by mass of the total amount of the binder polymer and the photopolymerizable compound. You may.
  • the content of the photopolymerization initiator in the photosensitive resin composition is 0.01 to 5 parts by mass and 0.1 to 4.5 parts by mass with respect to 100 parts by mass of the total amount of the binder polymer and the photopolymerizable compound. Alternatively, it may be 1 to 4 parts by mass.
  • the photosensitive resin composition may contain other components as needed.
  • other components include photopolymerizable compounds having a cationically polymerizable cyclic ether group, cationic polymerization initiators, sensitizers, dyes such as malakite green, and photocoloring such as tribromomethylphenyl sulfone and leucocrystal violet.
  • examples thereof include an imaging agent and a thermal cross-linking agent.
  • the content of the other components may be about 0.01 to 20 parts by mass with respect to 100 parts by mass of the total amount of the binder polymer and the photopolymerizable compound.
  • the total content of the binder polymer, the photopolymerizable compound and the photopolymerization initiator in the photosensitive resin composition is 90 to 100% by mass, or 90 to 100% by mass, based on the total mass of the components other than the solvent in the photosensitive resin composition. It may be 95 to 100% by mass.
  • a resist film containing a photosensitive resin composition may be laminated on the metal layer 20, or a photosensitive resin composition containing a solvent may be applied to the metal layer 20 from the coating film. The solvent may be removed.
  • the resist layer 3 having a pattern including the opening 3A is formed. Exposure and development can be performed by conventional methods known to those skilled in the art. Exposure through a photomask forms a fine pattern including the opening 3A where the metal layer 20 is exposed.
  • the developer for development may be an alkaline aqueous solution such as an aqueous sodium carbonate solution.
  • the surface of the metal layer 20 exposed in the opening 3A is pretreated by contact with the pretreatment liquid at a predetermined pretreatment temperature.
  • a metal layer is obtained by immersing an intermediate structure having a support 1, a metal layer 20 and a resist layer 3 having a pattern in a pretreatment liquid adjusted to a predetermined pretreatment temperature.
  • the surface of 20 can be pretreated.
  • the pretreatment temperature may be appropriately set according to the type of the pretreatment liquid and the like, but may be in the range of, for example, 20 to 50 ° C.
  • the immersion time in the pretreatment liquid may be, for example, 1 to 8 minutes.
  • the pretreatment liquid can be selected from those usually used as a pretreatment liquid for electrolytic plating, based on the mass change rate due to immersion of the resist layer 3 in the pretreatment liquid, as will be described later.
  • the pretreatment liquid may be acidic or may contain alcohol.
  • the alcohol content may be 0.2 to 5% by mass based on the mass of the pretreatment liquid.
  • the pretreatment liquid may be, for example, an acidic aqueous solution containing an acid component, an additive for electrolytic plating, and a reducing agent.
  • the acid component may be an organic acid, an inorganic acid or a combination thereof, and specific examples thereof include sulfuric acid; methanesulfonic acid and alkanesulfonic acid such as propanesulfonic acid; isethionic acid, propanolsulfonic acid and the like. Alkanolsulfonic acid; carboxylic acids such as citric acid, tartrate acid, and formic acid. These can be used alone or in combination of two or more.
  • the concentration of the acid component in the pretreatment liquid may be 10 to 300 g / L or 50 to 200 g / L with respect to the volume of the pretreatment liquid.
  • the additive for electrolytic plating may be, for example, a polyether compound, an organic sulfur compound, or a combination thereof.
  • the polyether compound include polyethylene glycol, polypropylene glycol, and derivatives thereof.
  • Organosulfur compounds are copper plating precipitation accelerators, sometimes referred to as brighteners, examples of which include 3-mercaptopropane sulphonic acid and bis (3-sulfopropyl) disulfide disodium salts. ..
  • the concentration of the additive in the pretreatment liquid may be 0.1 to 10,000 mg / L based on the volume of the pretreatment liquid.
  • reducing agents include hypophosphite, phosphite, dimethylamine borane, trimethylamine borane, hydrazine derivatives, hydride boron salts, aldehyde compounds (eg formalin, glyoxylic acid), titanium trichloride, catechol, resorcin. , Hydroquinone, ascorbate, phenylenediamine, and phosphinic acid derivatives. These may be used alone or in combination of two or more.
  • the concentration of the reducing agent in the pretreatment liquid may be 0.0001 to 0.1 mol / L with respect to the volume of the pretreatment liquid.
  • the pretreatment liquid may further contain a surfactant selected from an alkylbenzene sulfonate, a compound having an acetylene group, and the like.
  • the pretreatment liquid may contain a carboxylic acid or an alkane sulfonic acid, an inorganic acid selected from hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, an alkylbenzene sulfonate, and a compound having an acetylene group.
  • the content of the carboxylic acid and the alkane sulfonic acid may be 5 to 50 g / L or 10 to 20 g / L based on the volume of the pretreatment liquid, and the content of the inorganic acid is the volume of the pretreatment liquid. It may be 1 to 20 g / L or 2 to 10 g / L with reference to.
  • the alkylbenzene sulfonate is a salt of a sulfonic acid compound having a benzene ring, an alkyl group bonded to the benzene ring, and a sulfonic acid group.
  • the alkyl group may have 10 to 16 carbon atoms.
  • the alkylbenzene sulfonate may be a sodium salt, a potassium salt, or a triethanolamine salt. Specific examples of the alkylbenzene sulfonate include sodium linear dodecylbenzene sulfonate.
  • the content of the alkylbenzene sulfonate may be 0.5 to 20 g / L based on the volume of the pretreatment liquid.
  • Examples of commercially available surfactants that are compounds having an acetylene group include Surfinol 104, Surfinol 440, and Surfinol 465 (trade name, manufactured by Nissin Chemicals).
  • the content of the compound having an acetylene group may be 0.1 to 5 g / L or 0.3 to 1 g / L based on the volume of the pretreatment liquid.
  • the pretreatment liquid may contain a dispersant.
  • the dispersant may be a polymer containing a monomer unit derived from maleic acid, and examples of commercial products thereof include Marialyam AKM-0531 (trade name, manufactured by NOF CORPORATION).
  • the content of the dispersant may be 0.1 to 5 g / L or 0.3 to 1 g / L based on the volume of the pretreatment liquid.
  • the resist layer 3 and the pretreatment liquid are selected so that the mass change rate of the resist layer 3 when the resist layer 3 before exposure and development is immersed in the pretreatment liquid is ⁇ 2.0% by mass or more.
  • W0 is the mass of the resist layer 3 before being immersed in the pretreatment liquid
  • W1 is a laminate having a copper foil covering the entire one side of the resist layer 3 and the resist layer 3 in the pretreatment liquid at the pretreatment temperature. It is the mass of the resist layer 3 after being immersed for a minute.
  • This mass change rate is the amount of the component eluted from the resist layer 3 into the pretreatment liquid while the resist layer 3 is immersed in the pretreatment liquid, and the amount of the pretreatment liquid absorbed by the resist layer 3. It is a value that reflects the balance.
  • the mass change rate may be ⁇ 1.0 mass% or more, or ⁇ 0.5 mass% or more.
  • the mass change rate may be 3.0% by mass or less.
  • the resist layer 3 and the pretreatment liquid can be selected so that the mass change rate is within a predetermined range in consideration of the solubility of each component constituting the resist layer 3 in the pretreatment liquid and the like.
  • a copper plating layer 21 that fills the opening 3A is formed by electrolytic plating on the surface of the pretreated metal layer 20. After that, the resist layer 3 is peeled off from the metal layer 20. The metal layer 20 in the portion exposed by the peeling of the resist layer 3 is removed by a usual method such as etching. As a result, the wiring 2 composed of the metal layer 20 remaining on the support 1 and the metal plating layer 21 is formed.
  • the electrolytic plating layer 21 and the wiring 2 may include a linear portion, and the width thereof may be 5 to 20 ⁇ m.
  • the line / space (L / S) of the wiring 2 may be 5 ⁇ m / 5 ⁇ m to 20 ⁇ m / 20 ⁇ m. According to the method according to the present disclosure, even with such fine wiring, there is little possibility that defects such as peeling and falling of the wiring will occur.
  • the wiring board 10 manufactured by the above steps includes a support 1, a metal layer 20 provided on the support 1, and a wiring 2 having a copper plating layer 21 formed on the metal layer 20.
  • the number of black portions observed in the copper plating layer 21 may be 8 or less per 1 ⁇ m in width parallel to the main surface of the support 1 of the wiring 2.
  • the number of black parts here means the number of black parts having a maximum width of less than 0.3 ⁇ m observed by a scanning electron microscope.
  • the present invention is not limited to the following examples.
  • Material pretreatment liquid As a pretreatment liquid for pretreating the seed layer before electroplating, an acidic pretreatment liquid A (alcohol content: 0.7% by mass) containing alcohol and a pretreatment liquid B (alcohol-containing) Amount: 0.6% by mass) and pure water were prepared.
  • Resist film A photosensitive resist film A and a resist film B (both manufactured by Showa Denko Materials Co., Ltd.) for forming a circuit were prepared.
  • the thickness of these photosensitive resist films was 25 ⁇ m.
  • Mass change of resist film due to immersion in pretreatment liquid 50 mm square, 0.45 mm thick copper-clad laminates for printed wiring boards were prepared, and the mass of each copper-clad laminate was measured.
  • a resist film A or B is laminated on both sides of each copper-clad laminate using a laminator (GK-13DX manufactured by Ramie Corporation), and the copper of the copper-clad laminate covers the entire one side of the resist film and the resist film.
  • a laminate containing the foil was formed.
  • the laminating temperature was 110 ° C.
  • the laminating speed was 1.4 m / min
  • the laminating pressure was 0.5 MPa.
  • the total mass of the copper-clad laminate and the resist film was measured.
  • the initial mass W0 of the resist film (resist layer) was obtained by subtracting the mass of each copper-clad laminate from the measured mass.
  • the copper-clad laminate on which the resist film was laminated was impregnated with pretreatment liquid A at 40 ° C., pretreatment liquid B at 45 ° C., or pure water at 25 ° C. for 30 minutes.
  • the impregnated copper-clad laminate and resist film were dried by heating at 70 ° C. for 30 minutes in an oven.
  • the total mass of the copper-clad laminate and the resist film after drying was measured.
  • the mass W1 of the resist film (resist layer) after being immersed in the pretreatment liquid was obtained.
  • insulating resin layer 50 mm square, 0.45 mm thick copper-clad laminate for printed wiring board (Showa Denko Materials Co., Ltd.), and insulating material for forming insulating resin layer layer (Ajinomoto Build-up Film GX-92, Ajinomoto Fine Techno Co., Ltd.) was prepared.
  • the insulating material included a support film, an insulating curable resin film provided on the support film, and a protective film.
  • the protective film was peeled off from the insulating material, and the exposed curable resin film was placed on a copper-clad laminate.
  • the placed curable resin film was pressed against a copper-clad laminate by pressing it with a press-type vacuum laminator (MVLP-500, manufactured by Meiki Co., Ltd.).
  • the pressing conditions were a hot plate temperature of the press of 80 ° C., a vacuuming time of 20 seconds, a pressing time of 60 seconds, an atmospheric pressure of 4 kPa or less, and a pressure of 0.4 MPa.
  • the curable resin film was cured by heating in an oven at 180 ° C. for 30 minutes and then at 190 ° C. for 60 minutes to form an insulating resin layer on the copper foil of the copper-clad laminate.
  • the laminate consisting of the insulating resin layer and the copper-clad laminate was put into a mixed aqueous solution of 500 mL / L of a wet solution (Atotech, Swering Securigant) and 3 g / L of NaOH at 80 ° C. for 15 minutes at room temperature.
  • the ligand was immersed in a mixed aqueous solution of 100 mL / L and 98% sulfuric acid 50 mL / L at 40 ° C. for 5 minutes and in pure water at room temperature for 1 minute in that order.
  • the surface of the insulating resin layer was roughened by immersion in the desmear liquid.
  • Predip reagent manufactured by Uemura, trade name
  • Predip reagent for 5 minutes at ° C, 1 minute in pure water at 40 ° C, 1 minute in pure water at room temperature, 1 minute in pure water at room temperature in 10% aqueous sulfuric acid solution, 1 minute in pure water at room temperature.
  • MDP-2 MDP-2 concentration: 10 mL / L, 95% sulfuric acid: 1 mL / L
  • an activator reagent manufactured by Uemura, trade name: MAT-SP
  • Reducer reagent manufactured by Uemura, trade name: MRD-
  • Aqueous solution of 2-C, MAB-4-C, MAB-4-A (MRD-2-C concentration: 10 mL / L, MAB-4-C concentration: 50 mL / L, MAB-4-A concentration: 10 mL / L) at 35 ° C for 3 minutes, pure water for 1 minute, accelerator reagent (manufactured by Uemura, trade name: MEL-3A) in a 50 mL / L aqueous solution at room temperature for 1 minute, reagent for electroless plating (manufactured by Uemura, Product name: PEA-6A, PEA-6-B-2X, PEA-6-C, PEA-6-D, PTA-6-E) and a mixed solution of formaldehyde (PEA-6A concentration: 100 mL / L, PEA) -6-B-2X concentration: 50 mL / L, PEA-6-C concentration 14 mL / L, PEA-6-D concentration: 15 mL / L,
  • a metal layer was formed as a seed layer by electroless plating including these dipping treatments.
  • the formed seed layer was annealed by heating in an oven at 150 ° C. for 30 minutes.
  • a seed layer was formed by laminating a copper foil on the insulating resin layer. Arithmetic surface roughness Ra and average height Rc (JIS B 0601: 2013 (ISO 4287: 1997, Amd. 1: 2009)) of the surface opposite to the insulating resin layer of the seed layer are measured using a laser microscope. did.
  • resist layer A resist film A or B was laminated on the seed layer using a laminator (GK-13DX manufactured by Lamy Corporation).
  • the laminating temperature was 110 ° C.
  • the laminating speed was 1.4 m / min
  • the laminating pressure was 0.5 MPa.
  • the resist film was left to stand for 30 minutes, and the resist film was exposed using a mask aligner (ML-320FSAT manufactured by Mikasa), a bandpass filter (HB0405 manufactured by Asahi Spectroscopy Co., Ltd.), and a negative photomask.
  • the exposure amount was 45 mJ / cm 2 .
  • the resist layer was left for 30 minutes, the protective film of the resist film was peeled off, and the resist layer having a pattern having a linear opening with a width of 10 ⁇ m was exposed by development with a 1.0% sodium carbonate aqueous solution. Formed. Development was carried out by using an ultra-high pressure spin developer (manufactured by Blue Ocean Technology) to spray the developer for 100 seconds and then spray pure water as a rinse solution for 100 seconds.
  • the developing temperature was 30 ° C.
  • the rotation speed was 500 rpm
  • the spray pressure was 0.18 MPa
  • the moving distance of the spray nozzle head was 7.2 cm
  • the moving speed of the spray nozzle head was 10 cm / s.
  • the laminate composed of the pretreatment seed layer, the resist layer and the copper-clad laminate was immersed in the pretreatment liquid A at 40 ° C., the pretreatment liquid B at 45 ° C., or pure water at room temperature (25 ° C.). Then, the laminate consisting of the seed layer, the resist layer and the copper-clad laminate was immersed in pure water at 50 ° C. for 1 minute, in pure water at 25 ° C. for 1 minute, and in a 10% aqueous sulfuric acid solution at 25 ° C. for 1 minute in that order. ..
  • the laminate after the electrolytic plating pretreatment was immersed in an electrolytic plating solution, and an electrolytic plating layer was formed on the seed layer under the conditions of a current density of 10 A / dm 2 at 25 ° C. for 10 minutes. Then, the laminate having the wiring having the seed layer and the copper plating layer was immersed in pure water at room temperature for 1 minute.
  • the formed wiring was processed using a focused ion beam device (MI4050, manufactured by Hitachi High-Tech) to prepare a test piece having a cross section where the vicinity of the interface between the seed layer and the electrolytic plating layer was exposed. Eight places near the interface between the seed layer and the electrolytic plating layer on the cross section of the test piece were photographed at a magnification of 50,000 times using a scanning electron microscope (SU8200, manufactured by Hitachi High-Tech). The obtained cross-sectional photograph was binarized so that only the minute black part existing between the electroless copper plating and the electrolytic copper plating was black, and the number of black parts was recorded.
  • FIG. 2 is an example of a binarized electron microscope image. The number of black portions per 1 ⁇ m of width in the interface direction was calculated. Image editing software ImageJ was used for binarization. Table 1 shows the average value of the number of black parts at eight observation positions.
  • Wiring formability The wiring was observed, and it was confirmed whether or not the wiring collapsed or the wiring was peeled off in the 10 wirings.
  • 1 ... support, 2 ... wiring, 3 ... resist layer, 20 ... metal layer, 21 ... copper plating layer, 10 ... wiring board.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing Of Printed Wiring (AREA)
PCT/JP2021/033172 2020-09-11 2021-09-09 配線基板を製造する方法、及び配線基板 Ceased WO2022054873A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US18/044,789 US20240015889A1 (en) 2020-09-11 2021-09-09 Method for producing wiring board, and wiring board
KR1020237008772A KR20230080401A (ko) 2020-09-11 2021-09-09 배선 기판을 제조하는 방법, 및 배선 기판
CN202180061938.2A CN116209791A (zh) 2020-09-11 2021-09-09 制造配线基板的方法及配线基板
JP2022547650A JPWO2022054873A1 (https=) 2020-09-11 2021-09-09

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020153096 2020-09-11
JP2020-153096 2020-09-11

Publications (1)

Publication Number Publication Date
WO2022054873A1 true WO2022054873A1 (ja) 2022-03-17

Family

ID=80632152

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/033172 Ceased WO2022054873A1 (ja) 2020-09-11 2021-09-09 配線基板を製造する方法、及び配線基板

Country Status (6)

Country Link
US (1) US20240015889A1 (https=)
JP (1) JPWO2022054873A1 (https=)
KR (1) KR20230080401A (https=)
CN (1) CN116209791A (https=)
TW (1) TW202218492A (https=)
WO (1) WO2022054873A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024034068A1 (ja) * 2022-08-10 2024-02-15 株式会社レゾナック 配線基板を製造する方法、レジスト層又は配線基板を評価する方法、及び配線基板

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024185566A1 (ja) * 2023-03-07 2024-09-12 日本発條株式会社 回路パターンの製造方法、回路基板の製造方法、及び回路パターン
JP2024153251A (ja) * 2023-04-17 2024-10-29 コニカミノルタ株式会社 積層体、プリント基板、及びプリント基板の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011179085A (ja) * 2010-03-02 2011-09-15 C Uyemura & Co Ltd 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法
WO2012137838A1 (ja) * 2011-04-08 2012-10-11 太陽インキ製造株式会社 感光性組成物、その硬化皮膜及びそれらを用いたプリント配線板
JP2019197851A (ja) * 2018-05-11 2019-11-14 住友電気工業株式会社 プリント配線板及びプリント配線板の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217182A (en) * 1978-06-07 1980-08-12 Litton Systems, Inc. Semi-additive process of manufacturing a printed circuit
JP4269746B2 (ja) 2002-04-02 2009-05-27 凸版印刷株式会社 プリント配線板の製造方法、プリント配線板および半導体パッケージ
JP2009260216A (ja) * 2008-03-19 2009-11-05 Shinko Electric Ind Co Ltd 配線基板の製造方法
JP2009242860A (ja) * 2008-03-31 2009-10-22 Ebara-Udylite Co Ltd 酸性銅用前処理剤およびこれを利用するめっき方法
JP5483658B2 (ja) * 2010-07-29 2014-05-07 京セラＳｌｃテクノロジー株式会社 配線基板の製造方法
JP5975282B2 (ja) * 2012-09-27 2016-08-23 日立化成株式会社 多層配線基板の製造方法
JP6464578B2 (ja) * 2013-08-01 2019-02-06 三菱瓦斯化学株式会社 プリント配線板の製造方法
MY190719A (en) * 2014-05-23 2022-05-12 Showa Denko Materials Co Ltd Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element
JP2015078443A (ja) * 2015-01-14 2015-04-23 上村工業株式会社 電気銅めっき用前処理剤、電気銅めっきの前処理方法及び電気銅めっき方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011179085A (ja) * 2010-03-02 2011-09-15 C Uyemura & Co Ltd 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法
WO2012137838A1 (ja) * 2011-04-08 2012-10-11 太陽インキ製造株式会社 感光性組成物、その硬化皮膜及びそれらを用いたプリント配線板
JP2019197851A (ja) * 2018-05-11 2019-11-14 住友電気工業株式会社 プリント配線板及びプリント配線板の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024034068A1 (ja) * 2022-08-10 2024-02-15 株式会社レゾナック 配線基板を製造する方法、レジスト層又は配線基板を評価する方法、及び配線基板
WO2024034645A1 (ja) * 2022-08-10 2024-02-15 株式会社レゾナック 配線基板を製造する方法、レジスト層又は配線基板を評価する方法、及び配線基板
KR20250048063A (ko) 2022-08-10 2025-04-07 가부시끼가이샤 레조낙 배선 기판을 제조하는 방법, 레지스트층 또는 배선 기판을 평가하는 방법, 및 배선 기판

Also Published As

Publication number Publication date
KR20230080401A (ko) 2023-06-07
US20240015889A1 (en) 2024-01-11
CN116209791A (zh) 2023-06-02
TW202218492A (zh) 2022-05-01
JPWO2022054873A1 (https=) 2022-03-17

Similar Documents

Publication Publication Date Title
WO2022054873A1 (ja) 配線基板を製造する方法、及び配線基板
JP2011123505A (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法
WO2011018968A1 (ja) プリント配線板及びその製造方法
WO2007132533A1 (ja) レジストパターンの形成方法、回路基板の製造方法及び回路基板
WO2023013556A1 (ja) 配線基板を製造する方法、及び配線基板
KR102797795B1 (ko) 감광성 수지 조성물, 감광성 수지 필름, 다층 프린트 배선판 및 반도체 패키지, 및 다층 프린트 배선판의 제조 방법
CN105323953A (zh) 印刷线路板及其制造方法
JP2015057812A (ja) プリント配線基板の製造方法、それに用いられる積層体、積層フィルム、及び非硬化性樹脂組成物並びに前記製造方法により得られるプリント配線基板
TW515931B (en) Hardenable photoimageable compositions
WO2025154262A1 (ja) 配線基板を製造する方法
JP3637613B2 (ja) 多層配線板の製造方法
WO2024034068A1 (ja) 配線基板を製造する方法、レジスト層又は配線基板を評価する方法、及び配線基板
JP4735815B2 (ja) 穴埋め多層プリント配線板及びその製造方法
JP3593351B2 (ja) 多層配線基板の製造方法
JP7375305B2 (ja) 回路パターン、プリント配線板、半導体パッケージ、レジストパターン及び積層体
JP2008166313A (ja) レジストパターン形成方法
TWI914387B (zh) 印刷電路板的製造方法
JP4990605B2 (ja) 感光性樹脂組成物並びにそれを用いてなる感光性樹脂積層体及びレジストドライフィルム
KR100753386B1 (ko) 화학 증폭형 포토레지스트 조성물, 포토레지스트층 적층체,포토레지스트 조성물 제조방법, 포토레지스트 패턴의제조방법 및 접속단자의 제조방법
WO2025205742A1 (ja) プリント配線板の製造方法
WO2025205740A1 (ja) プリント配線板の製造方法
JPH05241347A (ja) フォトレジストフイルムのラミネート方法
TW202408335A (zh) 印刷配線板之製造方法
WO2025164122A1 (ja) プリント配線板の製造方法
WO2023157136A1 (ja) 配線基板の製造方法、配線基板、レチクル、及び、露光描画データ構造

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21866831

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022547650

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 18044789

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21866831

Country of ref document: EP

Kind code of ref document: A1