WO2022014300A1 - 半導体装置、および半導体装置の製造方法 - Google Patents

半導体装置、および半導体装置の製造方法 Download PDF

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Publication number
WO2022014300A1
WO2022014300A1 PCT/JP2021/024139 JP2021024139W WO2022014300A1 WO 2022014300 A1 WO2022014300 A1 WO 2022014300A1 JP 2021024139 W JP2021024139 W JP 2021024139W WO 2022014300 A1 WO2022014300 A1 WO 2022014300A1
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Prior art keywords
electrode
semiconductor device
bonding layer
bonding
conductive member
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Ceased
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PCT/JP2021/024139
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English (en)
French (fr)
Japanese (ja)
Inventor
光俊 齊藤
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Rohm Co Ltd
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Rohm Co Ltd
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Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US18/004,643 priority Critical patent/US20230245954A1/en
Priority to JP2022536221A priority patent/JP7686645B2/ja
Priority to DE112021002694.1T priority patent/DE112021002694T5/de
Priority to CN202180047781.8A priority patent/CN115769351A/zh
Priority to DE212021000205.6U priority patent/DE212021000205U1/de
Publication of WO2022014300A1 publication Critical patent/WO2022014300A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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Definitions

  • the present disclosure relates to a semiconductor device including a semiconductor element such as a MOSFET and a method for manufacturing the semiconductor device.
  • Patent Document 1 discloses an example of a semiconductor device including a MOSFET.
  • a drain terminal to which a power supply voltage is applied, a gate terminal for inputting an electric signal to the MOSFET, and a current corresponding to the power supply voltage are converted based on the electric signal, and then the converted current is used. Equipped with a flowing source terminal.
  • the MOSFET has a drain electrode conducting to the drain terminal and a source electrode conducting to the source terminal.
  • the drain electrode is electrically bonded to the die pad connected to the drain terminal by the first conductive bonding material (solder).
  • the source electrode is bonded to a conductive member (metal clip in Patent Document 1) by a second conductive bonding material (solder). Further, the conductive member is also joined to the source terminal. With such a configuration, it is possible to pass a large current through the semiconductor device.
  • Such a compound semiconductor substrate is formed of, for example, silicon carbide as a material.
  • the MOSFET can further improve the current conversion efficiency while reducing the size of the element as compared with the conventional MOSFET.
  • the drain electrode is electrically bonded to the die pad by the first conductive bonding material, and the second conductive bonding material is used. If the conductive member is electrically bonded to the source electrode in the same process, the position of the MOSFET may shift with respect to the die pad. This is due to the fact that the first conductive bonding material and the second conductive bonding material are simultaneously melted by reflow.
  • the bonding area of the conductive member with respect to the source electrode may be reduced due to the relatively small size of the MOSFET, etc., to the source terminal. Current may be hindered.
  • one object of the present disclosure is to provide a semiconductor device capable of suppressing a reduction in the bonding area of a conductive member with respect to an electrode of a semiconductor element while dealing with a large current.
  • Another subject of the present disclosure is to provide a method for manufacturing such a semiconductor device.
  • the semiconductor device provided by the first aspect of the present disclosure includes a die pad having a main surface facing the thickness direction; a first electrode provided facing the main surface, and the first electrode in the thickness direction. It has a second electrode provided on the opposite side of the electrode, and a semiconductor element in which the first electrode is electrically bonded to the main surface; the first electrode and the main surface are electrically bonded to each other. It is provided with a first bonding layer to be electrically bonded; a first conductive member electrically bonded to the second electrode; and a second bonding layer to electrically bond the first conductive member and the second electrode.
  • the melting point of the first bonding layer is higher than the melting point of the second bonding layer.
  • the method of manufacturing a semiconductor device places a conductive first bonding material on the main surface of the die pad; first and second electrodes located on opposite sides of each other.
  • the semiconductor element having the above is arranged on the first bonding material so that the first electrode faces the first bonding material; the first electrode is formed by melting and solidifying the first bonding material. Electrically bonded to the main surface; a conductive second bonding material is placed on the second electrode; a conductive member is placed on the second bonding material, and the second bonding material is placed.
  • Each step comprises electrically joining the conductive member to the second electrode by melting and solidifying.
  • the melting point of the first bonding material is higher than the melting point of the second bonding material.
  • FIG. 3 is a cross-sectional view taken along the line VII-VII of FIG.
  • FIG. 3 is a cross-sectional view taken along the line VIII-VIII of FIG.
  • FIG. 3 is a cross-sectional view taken along the line IX-IX of FIG. It is a partially enlarged view of FIG. FIG.
  • FIG. 7 is a partially enlarged view of FIG. 7.
  • FIG. 7 is another partially enlarged view of FIG. 7.
  • It is a partially enlarged sectional view of the semiconductor device which concerns on the modification of 1st Embodiment.
  • It is a top view explaining the manufacturing process of the semiconductor device shown in FIG.
  • It is a top view explaining the manufacturing process of the semiconductor device shown in FIG.
  • It is a top view explaining the manufacturing process of the semiconductor device shown in FIG.
  • FIG. is a partially enlarged sectional view explaining the manufacturing process of the semiconductor device shown in FIG. 1.
  • It is a top view explaining the manufacturing process of the semiconductor device shown in FIG.
  • It is a partially enlarged sectional view explaining the manufacturing process of the semiconductor device shown in FIG. 1.
  • FIG. 22 is a cross-sectional view taken along the line XXIII-XXIII of FIG. 22.
  • FIG. 23 is a partially enlarged view. It is another partially enlarged view of FIG. 23.
  • the semiconductor device A10 according to the first embodiment of the present disclosure will be described with reference to FIGS. 1 to 13.
  • the semiconductor device A10 is used for an electronic device including a power conversion circuit (for example, a DC-DC converter).
  • the semiconductor device A10 includes a die pad 10, a first lead 11, a second lead 12, a third lead 13, a semiconductor element 20, a first bonding layer 21, a second bonding layer 22, a third bonding layer 23, and a first conductive member 31. , A wire 33 and a sealing resin 40.
  • FIG. 3 is shown by an imaginary line (dashed-dotted line) that has passed through the sealing resin 40 for convenience of understanding.
  • the thickness direction of the die pad 10 is referred to as "thickness direction z".
  • the direction orthogonal to the thickness direction z is called “first direction x”.
  • the direction orthogonal to both the thickness direction z and the first direction x is referred to as a "second direction y”.
  • the semiconductor device A10 is elongated along the first direction x, but the present disclosure is not limited thereto.
  • the die pad 10 is a conductive member on which the semiconductor element 20 is mounted.
  • the die pad 10 is composed of the same lead frame together with the first lead 11, the second lead 12, and the third lead 13.
  • the lead frame is copper (Cu) or a copper alloy. Therefore, each composition of the die pad 10, the first lead 11, the second lead 12, and the third lead 13 contains copper (that is, each member contains copper).
  • the die pad 10 has a main surface 101, a back surface 102, and a through hole 103.
  • the main surface 101 faces the thickness direction z.
  • the semiconductor element 20 is mounted on the main surface 101.
  • the back surface 102 faces the side opposite to the main surface 101 in the thickness direction z.
  • the back surface 102 is, for example, tin (Sn) plated.
  • the through hole 103 penetrates the die pad 10 from the main surface 101 to the back surface 102 in the thickness direction z.
  • the through hole 103 has a circular shape when viewed along the thickness direction z. As shown in FIG. 7, the thickness T of the die pad 10 is larger than the maximum thickness t max of the first lead 11.
  • the semiconductor element 20 is mounted on the main surface 101 of the die pad 10.
  • the semiconductor element 20 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • the semiconductor element 20 is an n-channel type MOSFET having a vertical structure.
  • the semiconductor element 20 includes a compound semiconductor substrate.
  • the main material of the compound semiconductor substrate is silicon carbide (SiC).
  • gallium nitride (GaN) may be used as the main material of the compound semiconductor substrate.
  • the area of the semiconductor element 20 is 40% or less of the area of the main surface 101 of the die pad 10 when viewed along the thickness direction z.
  • the area of the semiconductor element 20 When viewed along the thickness direction z, the area of the semiconductor element 20 may be 20% or less of the area of the main surface 101, and further may be 10% or less. This ratio can be changed by appropriately changing the area of the semiconductor element 20 and the area of the main surface 101. As shown in FIGS. 10 and 11, the semiconductor device 20 has a first electrode 201, a second electrode 202, and a third electrode 203.
  • the first electrode 201 is provided so as to face the main surface 101 of the die pad 10.
  • a DC power supply voltage to be converted into power is applied to the first electrode 201.
  • the first electrode 201 corresponds to a drain electrode.
  • the second electrode 202 is provided on the side opposite to the first electrode 201 in the thickness direction z. A current converted by the semiconductor element 20 flows through the second electrode 202.
  • the second electrode 202 corresponds to the source electrode.
  • the third electrode 203 is provided on the side opposite to the first electrode 201 in the thickness direction z, and is located away from the second electrode 202.
  • a gate voltage for driving the semiconductor element 20 is applied to the third electrode 203. That is, the third electrode 203 corresponds to the gate electrode.
  • the semiconductor element 20 converts a current corresponding to the power supply voltage applied to the first electrode 201.
  • the area of the third electrode 203 is smaller than the area of the second electrode 202 when viewed along the thickness direction z.
  • the first bonding layer 21 includes a portion interposed between the main surface 101 of the die pad 10 and the first electrode 201 of the semiconductor element 20.
  • the first bonding layer 21 has conductivity.
  • the first bonding layer 21 electrically bonds the first electrode 201 and the main surface 101.
  • the first electrode 201 is electrically bonded to the main surface 101, and the first electrode 201 is electrically connected to the die pad 10.
  • the first bonding layer 21 contains tin.
  • the first bonding layer 21 is, for example, lead-free solder.
  • the melting point of the first bonding layer 21 is 290 ° C. or higher and 300 ° C. or lower.
  • the first bonding layer 21 may be lead solder.
  • the first lead 11 is located away from the die pad 10 as shown in FIGS. 3 and 7.
  • the first lead 11 extends along the first direction x.
  • the first lead 11 is conducting to the second electrode 202 of the semiconductor element 20. Therefore, the first lead 11 corresponds to the source terminal of the semiconductor device A10.
  • the first lead 11 has a covering portion 111, an exposed portion 112, and a first joint surface 113.
  • the covering portion 111 is covered with the sealing resin 40.
  • the exposed portion 112 is connected to the covering portion 111 and is exposed from the sealing resin 40.
  • the exposed portion 112 extends away from the die pad 10 in the first direction x.
  • the surface of the exposed portion 112 is, for example, tin-plated.
  • the first joint surface 113 faces the same side as the main surface 101 of the die pad 10 in the thickness direction z.
  • the first joint surface 113 is included in a part of the covering portion 111. In the thickness direction z, the first junction surface 113 is located closer to the semiconductor element 20 with respect to the main surface 101.
  • the second lead 12 is located away from both the die pad 10 and the first lead 11.
  • the second lead 12 extends along the first direction x.
  • the second lead 12 is located on the side opposite to the first lead 11 with respect to the third lead 13 in the second direction y.
  • the second lead 12 is conducting to the third electrode 203 of the semiconductor element 20. Therefore, the second lead 12 corresponds to the gate terminal of the semiconductor device A10.
  • the second lead 12 has a covering portion 121, an exposed portion 122, and a second joint surface 123.
  • the covering portion 121 is covered with the sealing resin 40.
  • the exposed portion 122 is connected to the covering portion 121 and is exposed from the sealing resin 40.
  • the exposed portion 122 extends away from the die pad 10 in the first direction x.
  • the surface of the exposed portion 122 is, for example, tin-plated.
  • the second joint surface 123 faces the same side as the main surface 101 of the die pad 10 in the thickness direction z.
  • the second joint surface 123 is included in a part of the covering portion 121.
  • the second junction surface 123 is located closer to the semiconductor element 20 with respect to the main surface 101. As shown in FIG. 9, the position of the second joint surface 123 in the thickness direction z is the same as the position of the first joint surface 113 of the first lead 11.
  • the third lead 13 includes a portion extending along the first direction x and is connected to the die pad 10.
  • the material of the third lead 13 is the same as the material of the die pad 10.
  • the third lead 13 has a covering portion 131 and an exposed portion 132.
  • the covering portion 131 is connected to the die pad 10 and is covered with the sealing resin 40.
  • the covering portion 131 is bent when viewed along the second direction y.
  • the exposed portion 132 is connected to the covering portion 131 and is exposed from the sealing resin 40.
  • the exposed portion 132 extends away from the die pad 10 in the first direction x.
  • the surface of the exposed portion 132 is, for example, tin-plated.
  • the height h of each of the exposed portion 112 of the first lead 11, the exposed portion 122 of the second lead 12, and the exposed portion 132 of the third lead 13 is the same. Is. Therefore, when viewed along the second direction y, at least a part (exposed portion 132) of the third lead 13 overlaps each of the first lead 11 and the second lead 12 (see FIG. 6).
  • the first conductive member 31 is electrically bonded to the second electrode 202 of the semiconductor element 20 and the first bonding surface 113 of the first lead 11. As a result, the first lead 11 is conducting to the second electrode 202.
  • the first conductive member 31 contains copper.
  • the first conductive member 31 is a metal clip.
  • the first conductive member 31 has a first joint portion 311 and a second joint portion 312.
  • the first joint portion 311 is a portion located at one end of the first conductive member 31 and electrically joins the first conductive member 31 to the second electrode 202.
  • the second joint portion 312 is located at the other end of the first conductive member 31, and is a portion for electrically joining the first conductive member 31 to the first joint surface 113.
  • the second bonding layer 22 includes a portion interposed between the second electrode 202 of the semiconductor element 20 and the first bonding portion 311 of the first conductive member 31.
  • the second bonding layer 22 has conductivity.
  • the second bonding layer 22 electrically bonds the first bonding portion 311 and the second electrode 202.
  • the first conductive member 31 is electrically bonded to the second electrode 202, and the first conductive member 31 is electrically connected to the second electrode 202.
  • the second bonding layer 22 contains tin.
  • the second bonding layer 22 is, for example, lead-free solder.
  • the melting point of the second bonding layer 22 is set to 260 ° C. or higher and 270 ° C. or lower.
  • the melting point of the first bonding layer 21 is higher than the melting point of the second bonding layer 22. Further, the thickness t1 of the first bonding layer 21 is larger than the thickness t2 of the second bonding layer 22.
  • the second bonding layer 22 may be lead solder.
  • the third joint layer 23 includes a portion interposed between the first joint surface 113 of the first lead 11 and the second joint portion 312 of the first conductive member 31.
  • the third bonding layer 23 has conductivity.
  • the third joint layer 23 electrically joins the second joint portion 312 and the first joint surface 113.
  • the first conductive member 31 is electrically bonded to the first bonding surface 113, and the first conductive member 31 is electrically connected to the first lead 11.
  • the third bonding layer 23 is made of the same material as the second bonding layer 22.
  • the wire 33 is electrically bonded to the third electrode 203 of the semiconductor element 20 and the second bonding surface 123 of the second lead 12. As a result, the second lead 12 is conducting to the third electrode 203.
  • the wire 33 contains gold (Au).
  • the wire 33 may have a structure containing copper or a structure containing aluminum (Al).
  • the sealing resin 40 covers the semiconductor element 20, the first conductive member 31, and the wire 33. Further, the sealing resin 40 covers a part of each of the die pad 10, the first lead 11, the second lead 12, and the third lead 13.
  • the sealing resin 40 has electrical insulation.
  • the sealing resin 40 is made of a material containing, for example, a black epoxy resin.
  • the sealing resin 40 has a top surface 41, a bottom surface 42, a pair of first side surfaces 43, a pair of second side surfaces 44, a pair of openings 45, and a mounting hole 46.
  • the top surface 41 faces the same side as the main surface 101 of the die pad 10 in the thickness direction z.
  • the bottom surface 42 faces the side opposite to the top surface 41 in the thickness direction z.
  • the back surface 102 of the die pad 10 is exposed from the bottom surface 42.
  • the pair of first side surfaces 43 are located apart from each other in the first direction x.
  • Each of the pair of first side surfaces 43 is connected to the top surface 41 and the bottom surface 42.
  • the exposed portion 112 of the first lead 11, the exposed portion 122 of the second lead 12, and the exposed portion 132 of the third lead 13. Is exposed.
  • the pair of second side surfaces 44 are located apart from each other in the second direction y. Each of the pair of second side surfaces 44 is connected to the top surface 41 and the bottom surface 42. As shown in FIGS. 2 and 6, the pair of openings 45 are located apart from each other in the second direction y. Each of the pair of openings 45 is recessed inward of the sealing resin 40 from both the top surface 41 and either of the pair of second side surfaces 44. A part of the main surface 101 of the die pad 10 is exposed from each of the pair of openings 45. As shown in FIGS. 2, 4 and 8, the mounting hole 46 penetrates the sealing resin 40 from the top surface 41 to the bottom surface 42 in the thickness direction z.
  • the mounting hole 46 is included in the through hole 103 of the die pad 10 when viewed along the thickness direction z.
  • the peripheral surface of the die pad 10 that defines the through hole 103 is covered with the sealing resin 40.
  • the maximum dimension of the mounting hole 46 is smaller than the dimension of the through hole 103 when viewed along the thickness direction z.
  • FIG. 13 shows a semiconductor device A11 which is a modification of the semiconductor device A10.
  • the semiconductor device A11 has a different configuration of the first bonding layer 21 from the semiconductor device A10. Further, the semiconductor device A11 includes a plating layer 19.
  • the first bonding layer 21 is made of a material containing sintered metal particles.
  • the sintered metal particles contain silver (Ag). Therefore, even in the semiconductor device A11, the melting point of the first bonding layer 21 is higher than the melting point of the second bonding layer 22.
  • the plating layer 19 covers the main surface 101 of the die pad 10.
  • the plating layer 19 contains silver.
  • the first bonding layer 21 includes a portion interposed between the plating layer 19 and the first electrode 201 of the semiconductor element 20.
  • FIGS. 17 and 19 are the same as the cross-sectional positions of FIG.
  • the cross-sectional position of FIG. 20 is the same as the cross-sectional position of FIG.
  • the first bonding material 81 is arranged on the main surface 101 of the die pad 10.
  • the first lead 11, the second lead 12, and the third lead 13 are connected to each other by the tie bar 80 constituting the lead frame.
  • the tie bar 80 extends along the second direction y.
  • the first bonding material 81 has conductivity.
  • the first bonding material 81 is wire solder.
  • the melting point of the first bonding material 81 is 290 ° C. or higher and 300 ° C. or lower.
  • the first bonding material 81 is temporarily attached to the main surface 101.
  • the semiconductor element 20 is arranged on the first bonding material 81.
  • the first electrode 201 of the semiconductor element 20 is made to face the first bonding material 81.
  • the first electrode 201 is temporarily attached to the first bonding material 81.
  • the first electrode 201 of the semiconductor element 20 is electrically attached to the main surface 101 of the die pad 10 by melting the first bonding material 81 by reflow and then solidifying it by cooling. Join to. In this step, the first bonding material 81 solidified by cooling becomes the first bonding layer 21.
  • the second bonding material 82 is placed on the second electrode 202 of the semiconductor element 20, and the third bonding material 83 is placed on the first bonding surface 113 of the first lead 11. Deploy.
  • Each of the second bonding material 82 and the third bonding material 83 has conductivity.
  • Each of the second bonding material 82 and the third bonding material 83 is cream solder.
  • a dispenser or the like is used for arranging each of the second joining material 82 and the third joining material 83.
  • the melting point of the second bonding material 82 is 260 ° C. or higher and 270 ° C. or lower. Therefore, the melting point of the first bonding material 81 is higher than the melting point of the second bonding material 82.
  • the third joining material 83 is made of the same material as the second joining material 82. After that, the first joint portion 311 of the first conductive member 31 is arranged on the second joint material 82. At the same time, the second joint portion 312 of the first conductive member 31 is arranged on the third joint material 83. After that, the second bonding material 82 and the third bonding material 83 are melted by reflow and then solidified by cooling to electrically bond the first bonding portion 311 to the second electrode 202. At the same time, the second joint portion 312 is electrically joined to the first joint surface 113. At this time, the reflow temperature is set to be lower than the melting point of the first bonding material 81.
  • the second bonding material 82 solidified by cooling becomes the second bonding layer 22.
  • the third bonding material 83 solidified by cooling becomes the third bonding layer 23.
  • the wire 33 is electrically bonded to the third electrode 203 of the semiconductor element 20 and the second bonding surface 123 of the second lead 12 by wire bonding.
  • the sealing resin 84 is formed.
  • the sealing resin 84 is formed by transfer molding.
  • the resin burr 841 is formed.
  • the resin burr 841 is blocked by the exposed portion 112 of the first lead 11, the exposed portion 122 of the second lead 12, the exposed portion 132 of the third lead 13, and the tie bar 80. After that, the resin burr 841 is removed with high-pressure water or the like.
  • the surface of each of the exposed portion 112 of the first lead 11, the exposed portion 122 of the second lead 12, and the exposed portion 132 of the third lead 13 and the die pad 10 are subjected to electrolytic plating using the tie bar 80 as a conductive path. Tin plating is applied to cover the back surface 102. Finally, by cutting the tie bar 80, the semiconductor device A10 is obtained.
  • the semiconductor device A10 includes a first bonding layer 21 and a second bonding layer 22.
  • the first bonding layer 21 has conductivity and electrically bonds the first electrode 201 of the semiconductor element 20 and the main surface 101 of the die pad 10.
  • the second bonding layer 22 has conductivity and electrically bonds the first conductive member 31 and the second electrode 202 of the semiconductor element 20.
  • the melting point of the first bonding layer 21 is higher than the melting point of the second bonding layer 22. Therefore, in the manufacturing process of the semiconductor device A10 shown in FIG. 19, when the second bonding material 82 to be the second bonding layer 22 is melted, the first bonding layer 21 is not melted. As a result, the position of the semiconductor element 20 with respect to the die pad 10 is prevented from being displaced.
  • the semiconductor device A10 further includes a third bonding layer 23.
  • the third bonding layer 23 has conductivity and electrically bonds the first conductive member 31 and the first bonding surface 113 of the first lead 11.
  • the third bonding layer 23 is made of the same material as the second bonding layer 22.
  • the manufacturing efficiency of the semiconductor device A10 can be improved.
  • the first conductive member 31 contains copper. As a result, the electrical resistance of the first conductive member 31 can be reduced as compared with the wire containing aluminum. This is suitable for passing a large current through the semiconductor element 20.
  • the thickness t1 of the first bonding layer 21 is larger than the thickness t2 of the second bonding layer 22. Therefore, when the semiconductor device A10 is used, the heat generated from the semiconductor element 20 can be more quickly conducted to the die pad 10.
  • the first bonding material 81 as wire solder in the manufacturing process of the semiconductor device A10, the first bonding layer 21 having a uniform thickness can be formed.
  • the first joint surface 113 of the first lead 11 is located closer to the semiconductor element 20 with respect to the main surface 101 of the die pad 10. As a result, the length of the first conductive member 31 is shortened, so that the inductance of the first conductive member 31 can be reduced.
  • the die pad 10 contains copper. Further, the thickness T of the die pad 10 is larger than the maximum thickness t max of the first lead 11. As a result, it is possible to improve the efficiency of heat conduction in the direction orthogonal to the thickness direction z while improving the heat conductivity of the die pad 10. This contributes to the improvement of heat dissipation of the die pad 10.
  • FIG. 22 is shown by an imaginary line through the sealing resin 40 for convenience of understanding.
  • the semiconductor device A20 is different from the semiconductor device A10 in that the second conductive member 32, the fourth bonding layer 24, and the fifth bonding layer 25 are provided in place of the wire 33.
  • the second conductive member 32 is electrically bonded to the third electrode 203 of the semiconductor element 20 and the second bonding surface 123 of the second lead 12. As a result, the second lead 12 is conducting to the third electrode 203.
  • the second conductive member 32 contains copper.
  • the second conductive member 32 is a metal clip.
  • the second conductive member 32 has a third joint portion 321 and a fourth joint portion 322.
  • the third joint portion 321 is located at one end of the second conductive member 32 and is a portion for electrically joining the second conductive member 32 to the third electrode 203.
  • the fourth joint portion 322 is a portion located at the other end of the second conductive member 32 and electrically joins the second conductive member 32 to the second joint surface 123.
  • the fourth bonding layer 24 includes a portion interposed between the third electrode 203 of the semiconductor element 20 and the third bonding portion 321 of the second conductive member 32.
  • the fourth bonding layer 24 has conductivity.
  • the fourth joint layer 24 electrically joins the third joint portion 321 and the third electrode 203.
  • the semiconductor device A20 the second conductive member 32 is electrically bonded to the third electrode 203, and the second conductive member 32 is electrically connected to the third electrode 203.
  • the fourth bonding layer 24 is made of the same material as the second bonding layer 22.
  • the fifth joint layer 25 includes a portion interposed between the second joint surface 123 of the second lead 12 and the fourth joint portion 322 of the second conductive member 32.
  • the fifth bonding layer 25 has conductivity.
  • the fifth joint layer 25 electrically joins the fourth joint portion 322 and the second joint surface 123.
  • the second conductive member 32 is electrically bonded to the second bonding surface 123, and the second conductive member 32 is electrically connected to the second lead 12.
  • the fifth bonding layer 25 is made of the same material as the second bonding layer 22.
  • the semiconductor device A20 includes a first bonding layer 21 and a second bonding layer 22.
  • the first bonding layer 21 has conductivity and electrically bonds the first electrode 201 of the semiconductor element 20 and the main surface 101 of the die pad 10.
  • the second bonding layer 22 has conductivity and electrically bonds the first conductive member 31 and the second electrode 202 of the semiconductor element 20.
  • the melting point of the first bonding layer 21 is higher than the melting point of the second bonding layer 22. Therefore, the semiconductor device A20 can also cope with a larger current and suppress the reduction of the bonding area of the conductive member with respect to the electrode of the semiconductor element 20.
  • the semiconductor device A20 includes a second conductive member 32 bonded to the third electrode 203 of the semiconductor element 20 and the second bonding surface 123 of the second lead 12. Further, the semiconductor device A20 includes a fourth bonding layer 24 and a fifth bonding layer 25.
  • the fourth bonding layer 24 has conductivity and electrically bonds the second conductive member 32 and the third electrode 203.
  • the fifth bonding layer 25 has conductivity and electrically bonds the second conductive member 32 and the second bonding surface 123.
  • Each of the 4th bonding layer 24 and the 5th bonding layer 25 is made of the same material as the 2nd bonding layer 22.
  • the second conductive member 32 contains copper. Further, in the thickness direction z, the second junction surface 123 of the second lead 12 is located closer to the semiconductor element 20 with respect to the main surface 101 of the die pad 10. As a result, the electric resistance of the second conductive member 32 becomes relatively low, and the length of the second conductive member 32 is shortened. Therefore, it is possible to reduce the on-resistance of the third electrode 203 of the semiconductor element 20. It will be possible.
  • the present disclosure is not limited to the above-mentioned embodiments and modifications.
  • the specific configuration of each part of the present disclosure can be freely redesigned.
  • the semiconductor devices and manufacturing methods of the present disclosure include the configurations described in the following appendices.
  • Appendix 1. A die pad with a main surface facing in the thickness direction, It has a first electrode provided so as to face the main surface and a second electrode provided on the side opposite to the first electrode in the thickness direction, and the first electrode is provided on the main surface. Electrically bonded semiconductor elements and A first bonding layer that electrically bonds the first electrode and the main surface, The first conductive member electrically bonded to the second electrode and A second bonding layer for electrically bonding the first conductive member and the second electrode is provided. A semiconductor device in which the melting point of the first bonding layer is higher than the melting point of the second bonding layer.
  • each of the die pad and the first conductive member contains copper.
  • Appendix 3. The semiconductor device according to Appendix 2, wherein the second bonding layer contains tin.
  • Appendix 4. The semiconductor device according to Appendix 3, wherein the first bonding layer contains tin.
  • Appendix 5. The semiconductor device according to Appendix 3 or 4, wherein the thickness of the first bonding layer is larger than the thickness of the second bonding layer.
  • the semiconductor device according to Appendix 3, wherein the first bonding layer is made of a material containing sintered metal particles.
  • Appendix 7. The semiconductor device according to Appendix 6, wherein the sintered metal particles contain silver.
  • the plating layer contains silver and is The semiconductor device according to Appendix 7, wherein the first bonding layer is interposed between the plating layer and the first electrode.
  • Appendix 9. The semiconductor device according to any one of Supplementary note 2 to 8, wherein the area of the semiconductor element is 40% or less of the area of the main surface when viewed along the thickness direction.
  • Appendix 10. The semiconductor device according to Appendix 9, wherein the semiconductor element includes a compound semiconductor substrate.
  • Appendix 11 A first lead having a first joint surface facing the same side as the main surface in the thickness direction and being located away from the die pad. Further, a third bonding layer for electrically bonding the first conductive member and the first bonding surface is provided.
  • the first lead contains copper and is The semiconductor device according to any one of Supplementary note 2 to 10, wherein the third bonding layer is made of the same material as the second bonding layer.
  • Appendix 12. The semiconductor device according to Appendix 11, wherein the first junction surface is located closer to the semiconductor element with respect to the main surface in the thickness direction.
  • Appendix 13. The semiconductor device according to Appendix 11 or 12, wherein the thickness of the die pad is larger than the maximum thickness of the first lead.
  • Appendix 14. It further comprises a second lead, a second conductive member, a fourth bonding layer and a fifth bonding layer.
  • the semiconductor element has a third electrode provided on the side opposite to the first electrode in the thickness direction and located away from the second electrode.
  • the second lead has a second joint surface facing the same side as the main surface in the thickness direction, and is located away from both the die pad and the first lead.
  • the second conductive member is electrically bonded to the third electrode and the second bonding surface.
  • the fourth bonding layer electrically bonds the second conductive member and the third electrode.
  • the fifth bonding layer electrically bonds the second conductive member and the second bonding surface.
  • the second conductive member and the second lead contain copper and contain copper.
  • Appendix 15 The semiconductor device according to Appendix 14, wherein the second junction surface is located closer to the semiconductor element with respect to the main surface in the thickness direction.
  • Appendix 16 It includes a portion extending along a first direction orthogonal to the thickness direction and further comprises a third lead leading to the die pad. Each of the first lead and the second lead extends along the first direction. The material of the third lead is the same as the material of the die pad. Addendum, when viewed along the thickness direction and the second direction orthogonal to the first direction, at least a part of the third lead overlaps each of the first lead and the second lead. 14.
  • Appendix 17. The semiconductor device according to any one of Supplementary note 1 to 16, further comprising a sealing resin that covers the semiconductor element, the first conductive member, and a part of the die pad.
  • the die pad has a back surface facing away from the main surface in the thickness direction.
  • a conductive first bonding material is placed on the main surface of the die pad, A semiconductor device having a first electrode and a second electrode located on opposite sides of each other is arranged on the first bonding material so that the first electrode faces the first bonding material. By melting and solidifying the first bonding material, the first electrode is electrically bonded to the main surface. A second bonding material having conductivity is placed on the second electrode, and the second bonding material is placed on the second electrode. Each step comprises placing the conductive member on the second bonding material and electrically joining the conductive member to the second electrode by melting and solidifying the second bonding material.
  • a method for manufacturing a semiconductor device wherein the melting point of the first bonding material is higher than the melting point of the second bonding material.
  • Appendix 20 The method for manufacturing a semiconductor device according to Appendix 19, wherein the first bonding material is wire solder.
  • A10, A11, A20 Semiconductor device 10: Die pad 101: Main surface 102: Back surface 103: Through hole 11: First lead 111: Covered part 112: Exposed part 113: First joint surface 12: Second lead 121: Covered part 122: Exposed part 123: Second joint surface 13: Third lead 131: Coating part 132: Exposed part 19: Plating layer 20: Semiconductor element 201: First electrode 202: Second electrode 203: Third electrode 21: First Bonding layer 22: 2nd joining layer 23: 3rd joining layer 24: 4th joining layer 25: 5th joining layer 31: 1st conductive member 311: 1st joining part 312: 2nd joining part 32: 2nd conductive member 3211: Third joint 322: Fourth joint 33: Wire 40: Sealing resin 41: Top surface 42: Bottom surface 43: First side surface 44: Second side surface 45: Opening 46: Mounting hole 80: Tie bar 81: First 1 joint material 82: 2nd joint material 83: 3rd joint material

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
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DE112021002694.1T DE112021002694T5 (de) 2020-07-13 2021-06-25 Halbleiterbauteil und verfahren zur herstellung des halbleiterbauteils
CN202180047781.8A CN115769351A (zh) 2020-07-13 2021-06-25 半导体装置以及半导体装置的制造方法
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WO2024219244A1 (ja) * 2023-04-21 2024-10-24 ローム株式会社 半導体装置
WO2024247579A1 (ja) * 2023-05-26 2024-12-05 ローム株式会社 半導体装置および車両
WO2025158862A1 (ja) * 2024-01-23 2025-07-31 ローム株式会社 半導体装置および車両

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