WO2021230344A1 - 洗浄装置および洗浄方法 - Google Patents

洗浄装置および洗浄方法 Download PDF

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Publication number
WO2021230344A1
WO2021230344A1 PCT/JP2021/018359 JP2021018359W WO2021230344A1 WO 2021230344 A1 WO2021230344 A1 WO 2021230344A1 JP 2021018359 W JP2021018359 W JP 2021018359W WO 2021230344 A1 WO2021230344 A1 WO 2021230344A1
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WO
WIPO (PCT)
Prior art keywords
substrate
cleaning
tube nozzle
cleaning liquid
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/018359
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English (en)
French (fr)
Japanese (ja)
Inventor
佑季 田中
健 飯泉
敬之 梶川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to US17/924,939 priority Critical patent/US12343770B2/en
Priority to CN202180035345.9A priority patent/CN115605981A/zh
Priority to KR1020227043529A priority patent/KR102928049B1/ko
Priority to JP2022522213A priority patent/JP7470785B2/ja
Publication of WO2021230344A1 publication Critical patent/WO2021230344A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2240/00—Type of materials or objects being cleaned
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • This disclosure relates to a cleaning device and a cleaning method.
  • various processes such as film formation, etching, and polishing are performed on the surface of a substrate such as a semiconductor wafer.
  • a substrate such as a semiconductor wafer.
  • cleaning is performed to remove fine particles (defects) such as abrasive debris and abrasive grains contained in the abrasive.
  • the cleaning effect is promoted by supplying a cleaning liquid onto the substrate (see, for example, Japanese Patent Application Laid-Open No. 2015-201627).
  • the cleaning liquid may not be effectively supplied on the entire surface of the substrate, resulting in a decrease in semiconductor manufacturing efficiency or after polishing. It may lead to a decrease in the effect of removing fine particles (defects) remaining on the substrate.
  • the progress of miniaturization there is an increasing demand for the quality of removing fine particle contamination adhering to the substrate.
  • a series of cleaning processes performed when cleaning a substrate by a single-wafer method for example, immediately after scrub cleaning for removing particle contamination having a relatively large particle size, non-particle contamination having a relatively small particle size is removed.
  • a process consisting of a series of cleaning processes such as contact cleaning may be performed, but at that time, different types of cleaning processes (different types of cleaning processes) are continuously performed, so when viewed in total. It took a long time to wash. However, if the processing time is simply shortened in order to improve the throughput, there is a concern that the removal rate of particle contamination will be lowered. Further, for example, foreign matter such as fine polishing debris, which is relatively difficult to remove, remains on the substrate after the polishing step is performed using a fine polishing slurry such as ceria, and the object to be treated is also treated. Since the surface of the substrate itself is not always used to have uniform properties, it is required to apply a more advanced cleaning technique to the cleaning technique after polishing the substrate. Moreover, as the processing process of the entire cleaning process becomes complicated, there is a concern that the total cleaning processing time required to achieve a predetermined cleaning quality becomes long, which is preferable from the viewpoint of throughput. No.
  • the cleaning device is A board rotation mechanism that holds the board and rotates the board around the central axis of the board as a rotation axis.
  • a first single-tube nozzle that discharges a first cleaning liquid toward the upper surface of the substrate held by the substrate rotation mechanism
  • a second single-tube nozzle that discharges a second cleaning liquid toward the upper surface of the substrate held by the substrate rotation mechanism separately from the first single-tube nozzle. Equipped with The second single-tube nozzle discharges the second cleaning liquid in the forward direction of the rotation direction of the substrate at a position away from the center of the substrate from the water landing position of the first cleaning liquid, and the second cleaning liquid is discharged.
  • the first single-tube nozzle and the so as to form a portion where the liquid flow on the upper surface of the substrate after the landing of the cleaning liquid 1 and the liquid flow on the upper surface of the substrate after the landing of the second cleaning liquid are combined.
  • the second single tube nozzle and the second single tube nozzle are arranged with each other.
  • the cleaning method is The step of rotating the board with the central axis of the board as the rotation axis, A step of ejecting the first cleaning liquid from the first single tube nozzle toward the upper surface of the substrate, and A step of ejecting a second cleaning liquid from a second single-tube nozzle separately from the first single-tube nozzle toward the upper surface of the substrate.
  • the second single-tube nozzle uses the liquid flow on the upper surface of the substrate after the landing of the first cleaning liquid and the substrate after the landing of the second cleaning liquid.
  • the second cleaning liquid is directed in the forward direction of the rotation direction of the substrate at a position away from the center of the substrate from the water landing position of the first cleaning liquid so that a portion of the upper surface of the substrate where the liquid flow meets is generated. Discharge.
  • FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus provided with a cleaning apparatus according to an embodiment.
  • FIG. 2 is a plan view showing the positional relationship between the substrate and the first single-tube nozzle and the second single-tube nozzle in the cleaning device according to the embodiment.
  • FIG. 3 is a side view showing the positional relationship between the substrate and the first single tube nozzle in the cleaning device according to the embodiment.
  • FIG. 4 is a side view showing the positional relationship between the substrate and the second single tube nozzle in the cleaning device according to the embodiment.
  • FIG. 5 is a diagram showing verification results (luminance value distribution) of Examples and Comparative Examples.
  • FIG. 6 is a graph showing the verification results (replacement efficiency) of Examples and Comparative Examples.
  • FIG. 5 is a diagram showing verification results (luminance value distribution) of Examples and Comparative Examples.
  • FIG. 7 is a diagram showing verification results (luminance value distribution) of Examples and Comparative Examples.
  • FIG. 8 is a graph showing the verification results (replacement efficiency) of Examples and Comparative Examples.
  • FIG. 9 is a diagram showing verification results (luminance value distribution) of Examples and Comparative Examples.
  • FIG. 10 is a graph showing the verification results (replacement efficiency) of Examples and Comparative Examples.
  • FIG. 11 is a plan view showing the positional relationship between the substrate and the first single-tube nozzle and the second single-tube nozzle in the cleaning device according to one modification of the embodiment.
  • FIG. 12 is a diagram for explaining an example of the water landing position of the second cleaning liquid discharged from the second single tube nozzle.
  • FIG. 13 is a side view showing the configuration of the substrate rotation mechanism in the cleaning device according to the embodiment.
  • FIG. 14 is a schematic diagram showing the configuration of the flow rate adjusting mechanism in the cleaning device according to the embodiment.
  • the cleaning device is A board rotation mechanism that holds the board and rotates the board around the central axis of the board as a rotation axis.
  • a first single-tube nozzle that discharges a first cleaning liquid toward the upper surface of the substrate held by the substrate rotation mechanism
  • a second single-tube nozzle that discharges a second cleaning liquid toward the upper surface of the substrate held by the substrate rotation mechanism separately from the first single-tube nozzle. Equipped with The second single-tube nozzle discharges the second cleaning liquid in the forward direction of the rotation direction of the substrate at a position away from the center of the substrate from the water landing position of the first cleaning liquid, and the second cleaning liquid is discharged.
  • the first single-tube nozzle and the so as to form a portion where the liquid flow on the upper surface of the substrate after the landing of the cleaning liquid 1 and the liquid flow on the upper surface of the substrate after the landing of the second cleaning liquid are combined.
  • the second single tube nozzle and the second single tube nozzle are arranged with each other.
  • such an embodiment can improve the replacement efficiency of the cleaning liquid on the substrate regardless of the rotation speed of the substrate, as compared with the case of using other types of nozzles. ..
  • both the liquid supply efficiency to the upper surface of the substrate and the particle removal rate on the surface of the substrate can be improved as compared with the conventional rinse cleaning using a nozzle, and both the improvement of the cleaning property and the improvement of the throughput in the substrate cleaning process can be achieved.
  • the cleaning device according to the second aspect of the embodiment is the cleaning device according to the first aspect.
  • the flow rate of the first cleaning liquid discharged from the first single-tube nozzle is larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle.
  • the replacement efficiency of the cleaning liquid on the substrate can be further improved by such an embodiment.
  • the cleaning device according to the third aspect of the embodiment is a cleaning device according to the second aspect.
  • the diameter of the first single-tube nozzle is larger than the diameter of the second single-tube nozzle.
  • the cleaning device according to the fourth aspect of the embodiment is a cleaning device according to any one of the first to third aspects.
  • the discharge of the first cleaning liquid by the first single-tube nozzle and the discharge of the second cleaning liquid by the second single-tube nozzle are performed at the same time.
  • the cleaning device according to the fifth aspect of the embodiment is the cleaning device according to any one of the first to fourth aspects.
  • the first cleaning solution and the second cleaning solution are water or a chemical solution.
  • the cleaning device is a cleaning device according to any one of the first to fifth aspects.
  • the first cleaning liquid lands on the front side of the center of the substrate, and the liquid flow of the first cleaning liquid on the upper surface of the substrate after landing reaches the center of the substrate.
  • the first cleaning liquid is discharged so as to pass through.
  • the cleaning device according to the seventh aspect of the embodiment is the cleaning device according to any one of the first to sixth aspects.
  • the distance from the center of the substrate to the landing position of the second cleaning liquid is longer than a quarter of the radius of the substrate.
  • the cleaning device according to the eighth aspect of the embodiment is the cleaning device according to the seventh aspect.
  • the distance from the center of the substrate to the landing position of the second cleaning liquid is longer than one-third of the radius of the substrate.
  • the cleaning device according to the ninth aspect of the embodiment is the cleaning device according to any one of the first to eighth aspects.
  • the angle between the liquid flow discharged from the first single tube nozzle and landing on the upper surface of the substrate and the upper surface of the substrate is 15 ° to 75 °.
  • the cleaning device according to the tenth aspect of the embodiment is the cleaning device according to any one of the first to ninth aspects.
  • the angle between the liquid flow discharged from the second single tube nozzle and landing on the upper surface of the substrate and the upper surface of the substrate is 15 ° to 75 °.
  • the cleaning device according to the eleventh aspect of the embodiment is a cleaning device according to any one of the first to tenth aspects.
  • the number of the second single tube nozzles is 2 or more.
  • the cleaning method is The step of rotating the board with the central axis of the board as the rotation axis, A step of ejecting the first cleaning liquid from the first single tube nozzle toward the upper surface of the substrate, and A step of ejecting a second cleaning liquid from a second single-tube nozzle separately from the first single-tube nozzle toward the upper surface of the substrate.
  • the second single-tube nozzle uses the liquid flow on the upper surface of the substrate after the landing of the first cleaning liquid and the substrate after the landing of the second cleaning liquid.
  • the second cleaning liquid is directed in the forward direction of the rotation direction of the substrate at a position away from the center of the substrate from the water landing position of the first cleaning liquid so that a portion of the upper surface of the substrate where the liquid flow meets is generated. Discharge.
  • FIG. 1 is a plan view showing the overall configuration of a substrate processing device (also referred to as a polishing device) 1 provided with a cleaning device according to an embodiment.
  • a substrate processing device also referred to as a polishing device
  • FIG. 1 is a plan view showing the overall configuration of a substrate processing device (also referred to as a polishing device) 1 provided with a cleaning device according to an embodiment.
  • the substrate processing apparatus 1 includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette (not shown) for stocking a plurality of wafers W (see FIG. 2 and the like) is placed. ,have.
  • the load port 12 is arranged adjacent to the housing 10.
  • An open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Applied Pod) can be mounted on the load port 12.
  • the SMIF pod and FOUP are airtight containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering it with a partition wall. Examples of the wafer W include semiconductor wafers and the like.
  • polishing units 14a to 14d Inside the housing 10, a plurality of polishing units 14a to 14d (four in the embodiment shown in FIG. 1), a first cleaning unit 16 and a second cleaning unit 18 for cleaning the polished wafer W, and a cleaning unit after cleaning are provided.
  • a drying unit 20 for drying the wafer W is housed.
  • the polishing units 14a to 14d are arranged along the longitudinal direction of the housing 10, and the cleaning units 16 and 18 and the drying unit 20 are also arranged along the longitudinal direction of the housing 10.
  • the first transfer robot 22 is arranged in the area surrounded by the load port 12, the polishing unit 14a located on the load port 12 side, and the drying unit 20. Further, a transport unit 24 is arranged in parallel with the longitudinal direction of the housing 10 between the region where the polishing units 14a to 14d are arranged and the region where the cleaning units 16 and 18 and the drying unit 20 are arranged. There is.
  • the first transfer robot 22 receives the wafer W before polishing from the load port 12 and delivers it to the transfer unit 24, or receives the dried wafer W taken out from the drying unit 20 from the transfer unit 24.
  • a second transfer robot 26 that transfers the wafer W between the first cleaning unit 16 and the second cleaning unit 18 is arranged. Further, between the second cleaning unit 18 and the drying unit 20, a third transfer robot 28 that transfers the wafer W between the second cleaning unit 18 and the drying unit 20 is arranged.
  • the substrate processing device 1 is provided with a control device 30 for controlling the movements of the devices 14a to 14d, 16, 18, 22, 24, 26, and 28.
  • a control device 30 for example, a programmable logic controller (PLC) is used.
  • PLC programmable logic controller
  • the control device 30 is arranged inside the housing 10, but the present invention is not limited to this, and the control device 30 may be arranged outside the housing 10.
  • a roll cleaning member extending in the horizontal direction is brought into contact with the surface of the wafer W in the presence of a cleaning liquid, and the surface of the wafer W is scrubbed while rotating the roll cleaning member.
  • a columnar pencil cleaning member extending in the vertical direction is brought into contact with the surface of the wafer W in the presence of a cleaning liquid, and the pencil cleaning member is rotated while the wafer is rotated.
  • a pencil cleaning device is used that scrubs the surface of the wafer W by moving it in one direction parallel to the surface of W.
  • IPA isopropyl alcohol
  • the roll cleaning device is used as the first cleaning unit 16, but the same pencil cleaning device as the second cleaning unit 18 may be used as the first cleaning unit 16, and the presence of the cleaning liquid.
  • a buff cleaning and polishing member having a rotation axis extending in the vertical direction is brought into contact with the surface of the wafer W, and the buff cleaning and polishing member is rotated and moved in one direction parallel to the surface of the wafer W to move the wafer W.
  • a buffing cleaning device for scrubbing and polishing the surface of the wafer W may be used, or a two-fluid jet cleaning device for cleaning the surface of the wafer W with a two-fluid jet may be used.
  • the pencil cleaning device is used as the second cleaning unit 18, but the same roll cleaning device as the first cleaning unit 16 may be used as the second cleaning unit 18 or buffing cleaning.
  • the device may be used or a two-fluid jet cleaning device may be used.
  • the cleaning solution includes a rinse solution such as pure water (DIW) and a chemical solution such as hydrogen peroxide (SC1), hydrogen peroxide (SC2), hydrogen peroxide (SPM), sulfuric acid, and hydrofluoric acid. Is done. Unless otherwise specified in the present embodiment, the cleaning solution means either a rinsing solution or a chemical solution.
  • DIW pure water
  • SC1 hydrogen peroxide
  • SC2 hydrogen peroxide
  • SPM hydrogen peroxide
  • sulfuric acid sulfuric acid
  • hydrofluoric acid hydrofluoric acid
  • the cleaning device 40 (see FIG. 2) according to one embodiment can be applied to both the first cleaning unit 16 and the second cleaning unit 18, and can be used for a roll cleaning device, a pencil cleaning device, a buffing cleaning device, and a buffing cleaning device. Can also be applied to a two-fluid jet cleaning device.
  • the cleaning device 40 As a specific application example of the cleaning device 40 according to one embodiment, an embodiment applied to rinsing cleaning in the first cleaning unit 16 and the second cleaning unit 18 will be described.
  • the roll cleaning member in the first cleaning unit 16 and the pencil cleaning member in the second cleaning unit 18 are retracted from above the substrate. This is to prevent particles and chemicals adhering to members such as roll cleaning members and pencil cleaning members from falling onto the substrate during rinsing cleaning and contaminating the substrate.
  • FIG. 2 is a plan view showing the positional relationship between the substrate W and the first single-tube nozzle 41 and the second single-tube nozzle 42 in the cleaning device 40 according to the embodiment.
  • the "spray nozzle” refers to a nozzle having a large number of supply ports and ejecting the cleaning liquid so as to spread spatially, and the “single tube nozzle” is different from the spray nozzle.
  • the cleaning device 40 is a first single tube that discharges a first cleaning liquid toward the substrate rotation mechanism 70 (see FIG. 13) and the upper surface of the substrate W held by the substrate rotation mechanism 70. It includes a nozzle 41 and a second single-tube nozzle 42 that discharges a second cleaning liquid toward the upper surface of the substrate W held by the substrate rotation mechanism 70 separately from the first single-tube nozzle 41.
  • FIG. 13 is a side view showing the configuration of the substrate rotation mechanism 70.
  • the substrate rotation mechanism 70 includes a substrate holding mechanism 71 that holds the substrate W horizontally, and a motor (rotation mechanism) 72 that rotates the substrate W around its central axis via the substrate holding mechanism 71.
  • a substrate plate (not shown) which is arranged so as to be symmetrical with respect to a straight line including the axis center and has a plurality of vacuum chuck holes communicating with the vacuum source may be adopted as the substrate holding mechanism 70.
  • the substrate W is held by the substrate holding mechanism 71 with the surface facing up.
  • the substrate holding mechanism 71 holds and rotates the substrate W
  • the substrate W rotates about its central axis (an axis that passes through the center O and is perpendicular to the surface of the substrate W) as a rotation axis.
  • the substrate W is rotated clockwise when viewed from above, but the rotation direction of the substrate W is not limited to this, and even if the substrate W is rotated counterclockwise when viewed from above. good.
  • the first single-tube nozzle 41 and the second single-tube nozzle 42 are above the substrate W and are cleaning liquids from the outside of the upper space of the substrate W toward the surface (upper surface) of the substrate W. Is discharged. That is, the first single-tube nozzle 41 and the second single-tube nozzle 42 supply the cleaning liquid from diagonally above the upper surface of the substrate W. The discharge of the first cleaning liquid by the first single-tube nozzle 41 and the discharge of the second cleaning liquid by the second single-tube nozzle 42 may be performed at the same time.
  • the flow rate of the first cleaning liquid discharged from the first single-tube nozzle 41 can be larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle 42. Therefore, as shown in FIG. 14, a first valve 51a and a first flow meter whose opening degree can be adjusted are on the pipe connecting the chemical liquid supply source 51 of the first cleaning liquid and the first single pipe nozzle 41. Along with the installation of 51b, a second valve 52a and a second flow meter 52b whose opening degree can be adjusted are placed on the pipe connecting the chemical liquid supply source 52 of the second cleaning liquid and the second single pipe nozzle 42. Will be installed.
  • the control unit 30 receives the flow rate signals from the first flow meter 51b and the second flow meter 51b, and sends the opening adjustment signal to the first valve 51a and so as to be within the preset flow rate range.
  • the opening degrees of the first valve 51a and the second valve 52a are feedback-controlled.
  • the flow rate of the first cleaning liquid discharged from the first single-tube nozzle 41 can be made larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle 42.
  • the position, discharge direction, diameter, and flow velocity of the first single-tube nozzle 41 are designed so that the first cleaning liquid discharged from the first single-tube nozzle 41 satisfies the following conditions.
  • the water landing position A of the first cleaning liquid discharged from the first single tube nozzle 41 on the upper surface of the substrate W is not the center O of the substrate W but the center O of the substrate W. It is considered to be a position separated by a distance Ra from.
  • the orientation of the first single-tube nozzle 41 is determined so that the center O of the substrate W is on the line connecting the first single-tube nozzle 41 and the water landing position A in a plan view. That is, in a plan view, the first single-tube nozzle 41 discharges the first cleaning liquid toward the center O of the substrate W, but the water landing position A is in front of the center O of the substrate W by a distance Ra. The position.
  • FIG. 3 is a side view showing the positional relationship between the substrate W and the first single tube nozzle 41.
  • FIG. 3 shows a vertical surface including a liquid flow of the first cleaning liquid from being discharged from the first single tube nozzle 41 to landing on the upper surface of the substrate W.
  • the angle (incident angle) ⁇ between the liquid flow of the first cleaning liquid and the upper surface of the substrate W until the water is discharged from the first single tube nozzle 41 and landed on the upper surface of the substrate W. Is set to 15 ° to 75 °, preferably 30 to 60 °.
  • the first single tube nozzle 41 supplies the first cleaning liquid from diagonally above the upper surface of the substrate W
  • the liquid flow of the first cleaning liquid is in the direction along the plane direction of the substrate W.
  • the water will land on the upper surface of the substrate W with the flow of the above, specifically, the flow in the direction toward the center O of the substrate W.
  • the first cleaning liquid flows in the direction toward the center O of the substrate W even after landing due to the inertia of the flow of the liquid flow toward the center O of the substrate W.
  • the first cleaning liquid that has landed on the surface of the substrate W receives the centrifugal force due to this rotation and flows toward the outside of the substrate W.
  • FIG. 3 in the present embodiment, since the water lands near the center O of the substrate W, a large centrifugal force does not work at such a position near the center O, and it is already before the water lands. Since there is a flow toward the center O, due to this inertia, the first cleaning liquid forms a liquid bundle that advances linearly in a direction corresponding to the supply direction of the first single tube nozzle 41 in a plan view, and forms a liquid bundle on the surface of the substrate W. Flow.
  • the first cleaning liquid that has landed on the upper surface of the substrate W passes through the center O of the substrate W.
  • the inertial force in the supply direction of the first single tube nozzle 41 gradually weakens, and the centrifugal force increases toward the outer periphery, so that the centrifugal force gradually increases toward the outer periphery.
  • a liquid flow that draws a curve in the rotation direction of the substrate W and flows toward the outer peripheral portion so as to widen the width is finally discharged from the outer peripheral portion of the substrate W.
  • the component parallel to the surface of the substrate W of the liquid flow is larger as the water landing position is farther from the center O of the substrate W. Therefore, it is desirable to reduce the incident angle ⁇ . Further, if the rotation speed of the substrate W is too fast, the inertial force in the liquid flow loses to the centrifugal force and the liquid flow does not pass through the center O of the substrate W, so that it is not desirable to rotate the substrate W at an excessively high speed.
  • the rotation speed is preferably 1500 rpm or less, and more preferably 1000 rpm or less.
  • the flow rate is 500 to 2000 ml / min.
  • the diameter of the first single tube nozzle 41 is 5 to 10 mm, it is desirable that the flow rate is 2000 ml / min or more.
  • the distance Ra from the center O of the substrate W at the water landing position A is too large, the flow velocity is increased so that the liquid flow after landing passes through the center of the substrate W due to the inertial force as described above. Since it must be large, it is desirable to make it less than one-third of the radius R.
  • the first cleaning liquid is supplied from the first single tube nozzle 41 to the upper surface of the substrate W, but is discharged from above the substrate W to the center O of the substrate W at a large incident angle (for example, 90 °). Rather, it is discharged from an obliquely upward direction at a relatively low incident angle toward the center O in a plan view so as to land in front of the center O, and the first cleaning liquid that has landed is the center of the substrate W. Since it flows so as to pass through O, the liquid is rapidly replaced even in the center O of the substrate W having a small centrifugal force, and the first cleaning liquid is prevented from stagnation in the center of the substrate W. Further, even when the surface of the substrate W is a layer of a soft material such as copper, the damage to the surface can be reduced as compared with the case where the incident angle is large.
  • the position, discharge direction, diameter, and flow velocity of the second single-tube nozzle 42 are designed so that the second cleaning liquid discharged from the second single-tube nozzle 41 satisfies the following conditions.
  • the water landing position B of the second cleaning liquid discharged from the second single tube nozzle 42 on the upper surface of the substrate W is the water landing position B of the substrate W from the water landing position A of the first cleaning liquid. It is located away from the center O. That is, the distance Rb from the center O of the substrate W at the water landing position B of the second cleaning liquid is set longer than the distance Ra from the center O of the substrate W at the water landing position A of the first cleaning liquid.
  • the distance Rb from the center O of the substrate W to the landing position B of the second cleaning liquid is preferably longer than one-fourth of the radius R of the substrate, and more preferably longer than one-third of the radius R of the substrate. desirable.
  • the second The landing position of the second cleaning liquid discharged from the single-tube nozzle 42 is in a region 90 ° upstream of the substrate rotation direction with respect to the extension line from the center O of the substrate W in the supply direction of the first nozzle. It may be in the hatched area in FIG. 12).
  • the second single tube nozzle 42 has a liquid flow on the upper surface of the substrate W after the first cleaning liquid has landed and a liquid on the upper surface of the substrate W after the second cleaning liquid has landed.
  • the second cleaning liquid is discharged in the forward direction. That is, the second single-tube nozzle discharges the second cleaning liquid in the forward direction of the rotation direction of the substrate W at a position away from the center O of the substrate W from the water landing position of the first cleaning liquid.
  • the single tube nozzle 42 of 2 is arranged with each other. As a result, the second cleaning liquid discharged from the second single-tube nozzle 42 lands on the upper surface of the substrate W, and then partially mixes with the liquid flow of the first cleaning liquid to touch the surface of the substrate W. It spreads and flows toward the outer circumference.
  • the second single-tube nozzle is located in the direction of rotation of the substrate at a position far from the center of the substrate from the landing position of the first cleaning liquid, whereas the cleaning effect may not be sufficiently obtained.
  • the second cleaning liquid is discharged in the forward direction of the above, and further, the liquid flow on the upper surface of the substrate after the landing of the first cleaning liquid and the liquid flow on the upper surface of the substrate after the landing of the second cleaning liquid.
  • the liquid flow along the rotation direction of the substrate from the second nozzle collides with the liquid flow supplied from the first nozzle, and the liquid flow (liquid) in the horizontal plane of the substrate collides with the liquid flow supplied from the first nozzle. (Horizontal movement of the film region) and vertical flow of the liquid in the thick liquid layer can be expected, and it can be expected that the cleaning liquid is spread over the entire surface of the substrate while enhancing the cleaning effect.
  • the second cleaning liquid discharged from the second single tube nozzle 42 does not need to flow linearly on the surface of the substrate W after landing. Therefore, the conditions such as the diameter and the flow velocity of the second cleaning liquid discharged from the second single-tube nozzle 43 are set so that the second cleaning liquid flows toward the outer periphery by the centrifugal force acting immediately after the liquid is landed on the rotating substrate. It may be set. However, since the point that the surface of the substrate W is damaged when the incident angle is large is the same as in the case of the first single-tube nozzle 41, the incident angle of the second single-tube nozzle 42 is also reduced. Is desirable.
  • FIG. 4 is a side view showing the positional relationship between the substrate W and the second single tube nozzle 42.
  • FIG. 4 shows a vertical surface including a liquid flow of the second cleaning liquid from the second single tube nozzle 42 to the water landing on the upper surface of the substrate W.
  • the angle (incident angle) ⁇ between the liquid flow of the second cleaning liquid and the upper surface of the substrate W until the water is discharged from the second single tube nozzle 42 and landed on the upper surface of the substrate W. Is set to 15 ° to 75 °, preferably 30 ° to 60 °.
  • the second single-tube nozzle 42 has a liquid flow on the upper surface of the substrate W after the first cleaning liquid has landed and a second cleaning liquid.
  • the forward direction of the rotation direction of the substrate W at a position away from the center O of the substrate W from the landing position A of the first cleaning liquid so that a portion of the upper surface of the substrate W after landing is formed so as to meet with the liquid flow.
  • the replacement efficiency of the cleaning liquid on the upper surface of the substrate W is improved as compared with the case of using other types of nozzles, regardless of the rotation speed of the substrate W. It has become.
  • the cleaning liquid can be quickly supplied to the upper surface of the substrate, the liquid and fine particles on the substrate can be effectively washed away, and the time required for the cleaning process can be shortened. Is possible.
  • the flow rate of the first cleaning liquid discharged from the first single-tube nozzle 41 is larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle 42.
  • the flow rate of the first single-tube nozzle 41 The diameter may be larger than the diameter of the second single-tube nozzle 42, or the flow rate of the cleaning liquid supplied to the first single-tube nozzle 41 and the second single-tube nozzle 42 by using the flow rate controller, respectively. You may adjust.
  • the flow rate of the first cleaning liquid discharged from the first single-tube nozzle 41 is discharged from the second single-tube nozzle 42 as in the present embodiment. It has been clarified that the replacement efficiency of the cleaning liquid on the upper surface of the substrate W is further improved by increasing the flow rate of the second cleaning liquid.
  • Example 1 As the first embodiment according to the present embodiment, first, while rotating the substrate with the central axis of the substrate as the rotation axis, the upper surface of the substrate is filled with the fluorescent paint, and then the upper surface of the substrate is irradiated with light and the reflected light thereof. (That is, the brightness value distribution on the upper surface of the board) started shooting with a high-speed camera. Next, pure water (DIW) is discharged from the first single tube nozzle ( ⁇ 1.0 mm) so as to land in front of the center of the upper surface of the substrate, and the center of the upper surface of the substrate is halved of the radius of the substrate.
  • DIW pure water
  • Pure water (DIW) is discharged from the second single-tube nozzle ( ⁇ 1.0 mm) separately from the first single-tube nozzle in the forward direction of the rotation direction of the substrate so that the water lands at a position separated by 1. Then, the fluorescent paint on the upper surface of the substrate was washed away with pure water (DIW) to remove it.
  • the total flow rate of pure water (DIW) discharged from the first single-tube nozzle and the second single-tube nozzle is 1000 ml / min, and the flow rates of the first single-tube nozzle and the second single-tube nozzle. The ratio was 1: 1.
  • Comparative Example 1 As Comparative Example 1, first, as in Example 1, the upper surface of the substrate is filled with a fluorescent paint while rotating the substrate with the central axis of the substrate as the rotation axis, and then the upper surface of the substrate is irradiated with light to reflect the light. We started shooting light (that is, the brightness value distribution on the top surface of the board) with a high-speed camera. Next, pure water (DIW) is discharged from two cone nozzles (nozzles that spray liquid in a conical shape from a circular discharge port) on the upper surface of the substrate, and the fluorescent paint on the upper surface of the substrate is washed away with pure water (DIW). Was removed.
  • DIW pure water
  • Example 1 the total flow rate of pure water (DIW) discharged from the two cone nozzles was 1000 ml / min. Then, as in Example 1, the replacement efficiency of the fluorescent paint on the substrate with pure water (DIW) was calculated based on the time change of the luminance value distribution on the upper surface of the substrate. That is, Comparative Example 1 is different from Example 1 in that pure water (DIW) is discharged from the two cone nozzles.
  • Comparative Example 2 As Comparative Example 2, first, as in Example 1, while rotating the substrate with the central axis of the substrate as the rotation axis, the upper surface of the substrate is filled with the fluorescent paint, and then the upper surface of the substrate is irradiated with light to reflect the light. We started shooting light (that is, the brightness value distribution on the top surface of the board) with a high-speed camera. Next, pure water (DIW) is discharged from one single tube nozzle ( ⁇ 3.0 mm) so as to land in front of the center of the upper surface of the substrate, and the fluorescent paint on the upper surface of the substrate is washed away with pure water (DIW). Removed.
  • DIW pure water
  • Example 2 the flow rate of pure water (DIW) discharged from one single tube nozzle was 1000 ml / min. Then, as in Example 1, the replacement efficiency of the fluorescent paint on the substrate with pure water (DIW) was calculated based on the time change of the luminance value distribution on the upper surface of the substrate. That is, Comparative Example 2 is different from Example 1 in that pure water (DIW) is discharged from one single tube nozzle.
  • Comparative Example 3 As Comparative Example 3, first, as in Example 1, the upper surface of the substrate is filled with the fluorescent paint while rotating the substrate with the central axis of the substrate as the rotation axis, and then the upper surface of the substrate is irradiated with light to reflect the light. We started shooting light (that is, the brightness value distribution on the top surface of the board) with a high-speed camera. Next, pure water (DIW) is discharged from one single-tube nozzle ( ⁇ 1.0 mm) so as to land in front of the center of the upper surface of the substrate, and water is landed from the center of the upper surface of the substrate to the outer periphery.
  • DIW pure water
  • Pure water (DIW) is also discharged from one flat nozzle (nozzle that sprays liquid in a fan shape from a slit-shaped discharge port) in the forward direction of the rotation direction of the substrate, and the fluorescent paint on the top surface of the substrate is pure water. It was washed away with (DIW) and removed.
  • the total flow rate of pure water (DIW) discharged from one single tube nozzle and one flat nozzle was 1000 ml / min.
  • the replacement efficiency of the fluorescent paint on the substrate with pure water (DIW) was calculated based on the time change of the luminance value distribution on the upper surface of the substrate. That is, Comparative Example 2 is different from Example 1 in that pure water (DIW) is discharged from one single tube nozzle and one flat nozzle.
  • FIG. 5 shows the verification results of Example 1 and Comparative Examples 1 to 3 at low rotation speeds, 0.5 seconds after the start of discharge of pure water (DIW) when the substrate was rotated at 150 rpm. And the luminance value distribution after 1.0 second is shown. Further, FIG. 6 shows 0.5 after starting the discharge of pure water (DIW) when the substrate is rotated at 150 rpm as the verification results of Example 1 and Comparative Examples 1 to 3 at low rotation speeds. It shows the replacement efficiency after seconds and after 1.0 seconds.
  • DIW pure water
  • FIG. 7 shows the verification results of Example 1 and Comparative Examples 1 to 3 at high rotation speeds, 0.5 seconds after the start of discharge of pure water (DIW) when the substrate was rotated at 400 rpm. And the luminance value distribution after 1.0 second is shown.
  • FIG. 8 shows, as a result of verification at high rotation speeds of Example 1 and Comparative Examples 1 to 3, 0.5 after starting the discharge of pure water (DIW) when the substrate is rotated at 400 rpm. It shows the replacement efficiency after seconds and after 1.0 seconds.
  • the second single-tube nozzle has a portion where the liquid flow on the upper surface of the substrate after the landing of the first cleaning liquid and the liquid flow on the upper surface of the substrate after the landing of the second cleaning liquid are combined.
  • Example 2 As the second embodiment according to the present embodiment, first, as in the first embodiment, the upper surface of the substrate is filled with fluorescent paint while rotating the substrate with the central axis of the substrate as the rotation axis, and then light is applied to the upper surface of the substrate. Was irradiated, and the reflected light (that is, the brightness value distribution on the upper surface of the substrate) was photographed by a high-speed camera. Next, pure water (DIW) is discharged from the first single tube nozzle ( ⁇ 1.9 mm) so as to land in front of the center of the upper surface of the substrate, and the center of the upper surface of the substrate is halved of the radius of the substrate.
  • DIW pure water
  • Pure water (DIW) is discharged from the second single-tube nozzle ( ⁇ 1.0 mm) separately from the first single-tube nozzle in the forward direction of the rotation direction of the substrate so that the water lands at a position separated by 1. Then, the fluorescent paint on the upper surface of the substrate was washed away with pure water (DIW) to remove it.
  • the total flow rate of pure water (DIW) discharged from the first single-tube nozzle and the second single-tube nozzle is 1000 ml / min, and the flow rates of the first single-tube nozzle and the second single-tube nozzle. The ratio was about 8: 2.
  • Example 2 is different from Example 1 in that the flow rate of the first single-tube nozzle is larger than the flow rate of the second single-tube nozzle.
  • Comparative Example 4 As Comparative Example 4, first, as in Example 1, while rotating the substrate with the central axis of the substrate as the rotation axis, the upper surface of the substrate is filled with the fluorescent paint, and then the upper surface of the substrate is irradiated with light to reflect the light. We started shooting light (that is, the brightness value distribution on the top surface of the board) with a high-speed camera. Next, pure water (DIW) is discharged from the first single-tube nozzle ( ⁇ 1.0 mm) and the second single-tube nozzle ( ⁇ 1.0 mm) so as to land in front of the center of the upper surface of the substrate. The fluorescent paint on the upper surface was washed away with pure water (DIW) to remove it.
  • DIW pure water
  • the total flow rate of pure water (DIW) discharged from the first single-tube nozzle and the second single-tube nozzle is 1000 ml / min, and the flow rates of the first single-tube nozzle and the second single-tube nozzle.
  • the ratio was 1: 1.
  • the replacement efficiency of the fluorescent paint on the substrate with pure water (DIW) was calculated based on the time change of the luminance value distribution on the upper surface of the substrate. That is, Comparative Example 4 is different from Example 1 in that the second single-tube nozzle also discharges pure water (DIW) toward the center of the substrate in the same manner as the first single-tube nozzle.
  • Comparative Example 5 As Comparative Example 5, first, as in Example 1, the upper surface of the substrate is filled with the fluorescent paint while rotating the substrate with the central axis of the substrate as the rotation axis, and then the upper surface of the substrate is irradiated with light to reflect the light. We started shooting light (that is, the brightness value distribution on the top surface of the board) with a high-speed camera. Next, pure water (DIW) is discharged from the first single tube nozzle ( ⁇ 1.0 mm) so as to land in front of the center of the upper surface of the substrate, and the center of the upper surface of the substrate is halved of the radius of the substrate.
  • DIW pure water
  • Pure water (DIW) is discharged from the second single-tube nozzle ( ⁇ 1.0 mm) separately from the first single-tube nozzle in the direction opposite to the rotation direction of the substrate so that the water lands at a position separated by 1. Then, the fluorescent paint on the upper surface of the substrate was washed away with pure water (DIW) to remove it.
  • the total flow rate of pure water (DIW) discharged from the first single-tube nozzle and the second single-tube nozzle is 1000 ml / min, and the flow rates of the first single-tube nozzle and the second single-tube nozzle. The ratio was 1: 1.
  • Example 1 the replacement efficiency of the fluorescent paint on the substrate with pure water (DIW) was calculated based on the time change of the luminance value distribution on the upper surface of the substrate. That is, Comparative Example 5 is different from Example 1 in that the second single-tube nozzle discharges pure water (DIW) in the direction opposite to the rotation direction of the substrate.
  • FIG. 9 shows 0.5 seconds after the start of discharge of pure water (DIW) when the substrate is rotated at 150 rpm and 1.
  • the brightness value distribution after 0 seconds is shown.
  • FIG. 10 shows, as the verification results of Examples 1 and 2, 0.5 seconds after the start of discharge of pure water (DIW) when the substrate is rotated at 150 rpm, and 1. It shows the replacement efficiency after 0 seconds.
  • Example 2 higher substitution efficiency was obtained than in Example 1. Therefore, by making the flow rate of the first cleaning liquid discharged from the first single-tube nozzle larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle, the replacement of the cleaning liquid on the upper surface of the substrate W is performed. It was found that the efficiency was further improved.
  • the number of the second single-tube nozzle 42 is one, but the number is not limited to this, and as shown in FIG. 11, the second single-tube nozzle is not limited to one.
  • the number of 42a and 42b may be two or more.
  • it is desirable that the flow rate of the cleaning liquid discharged toward the position closer to the center O of the substrate is larger. That is, the flow rate of the first cleaning liquid discharged from the first single-tube nozzle 41 is larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle 42a on the center side, and the flow rate of the second cleaning liquid on the outer peripheral side is larger.
  • the flow rate is larger than the flow rate of the second cleaning liquid discharged from the single tube nozzle 42b. Further, it is desirable that the flow rate of the second cleaning liquid discharged from the second single-tube nozzle 42a on the center side is larger than the flow rate of the second cleaning liquid discharged from the second single-tube nozzle 42b on the outer peripheral side.
  • the fluorescent paint on the substrate is regarded as a liquid remaining on the substrate (a contaminated liquid containing particles or the like or a liquid containing a chemical liquid component), and pure water is supplied by supplying pure water in various nozzle forms.
  • the replacement efficiency with water was confirmed by experiments.
  • the cleaning solution can be efficiently distributed over the entire surface of the substrate in a shorter time than before. This makes it possible to improve or improve the effect (or paraphrased as the removal ability) of the fine particles remaining on the entire surface of the substrate.

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  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2021/018359 2020-05-15 2021-05-14 洗浄装置および洗浄方法 Ceased WO2021230344A1 (ja)

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CN202180035345.9A CN115605981A (zh) 2020-05-15 2021-05-14 清洗装置及清洗方法
KR1020227043529A KR102928049B1 (ko) 2020-05-15 2021-05-14 세정 장치 및 세정 방법
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US20230191460A1 (en) 2023-06-22
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