WO2021156906A1 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
WO2021156906A1
WO2021156906A1 PCT/JP2020/003894 JP2020003894W WO2021156906A1 WO 2021156906 A1 WO2021156906 A1 WO 2021156906A1 JP 2020003894 W JP2020003894 W JP 2020003894W WO 2021156906 A1 WO2021156906 A1 WO 2021156906A1
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Prior art keywords
plasma
processing
temperature
plasma processing
substrate
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Ceased
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PCT/JP2020/003894
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English (en)
French (fr)
Japanese (ja)
Inventor
南菜子 玉利
侯然 廣田
角屋　誠浩
征洋 長谷
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Priority to JP2021514444A priority Critical patent/JP7013618B2/ja
Priority to PCT/JP2020/003894 priority patent/WO2021156906A1/ja
Priority to KR1020217002241A priority patent/KR102614972B1/ko
Priority to US17/275,420 priority patent/US12154765B2/en
Priority to CN202080004147.1A priority patent/CN113498546B/zh
Priority to TW110103760A priority patent/TWI818230B/zh
Publication of WO2021156906A1 publication Critical patent/WO2021156906A1/ja
Anticipated expiration legal-status Critical
Priority to US18/921,861 priority patent/US20250046580A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means

Definitions

  • the present invention relates to a plasma processing apparatus and a plasma processing method.
  • the plasma processing device includes a vacuum processing chamber, a gas supply device connected to the vacuum processing chamber, a vacuum exhaust system for maintaining the pressure in the vacuum processing chamber at a desired value, an electrode on which a substrate to be processed is placed, and plasma in the vacuum processing chamber. It is composed of a plasma generating means for generating the above.
  • the etching process of the substrate to be processed held on the mounting electrode of the substrate to be processed is performed.
  • Etching of the substrate to be processed proceeds by physical sputtering or chemical reaction with ions and radicals emitted from plasma and reactor walls. Therefore, the etching amount of the substrate to be processed is affected not only by the plasma state but also by the amount of radicals emitted from the reactor wall surface or adsorbed on the reactor wall surface.
  • one of the main factors that determines the amount of radicals released or adsorbed on the wall surface of the reactor is the temperature of the wall surface of the reactor.
  • the reactor wall surface temperature is heated not only by an electric heater but also by plasma heat input.
  • the wall surface of the reactor is in a state of being heated by the heat input during the plasma discharge, but when the apparatus is in the processing standby state (hereinafter, idling state) after the plasma discharge is completed, the processing standby time (hereinafter, idling time). ),
  • the temperature of the wall surface of the reactor gradually decreases.
  • Patent Document 1 discloses a technique for raising the temperature of the reactor wall surface by performing plasma discharge under preset conditions before processing the substrate.
  • Patent Document 2 discloses a technique for raising the temperature of the reactor wall surface by performing intermittent discharge during the idling time of the apparatus.
  • Patent Document 1 aims to raise the temperature of the reactor by performing plasma discharge before substrate processing, but the rise is achieved after the apparatus has been idle for a long period of time, for example, several hours.
  • a long-time discharge is required to sufficiently raise the temperature. This causes a decrease in throughput and is a problem from the viewpoint of cost performance.
  • Patent Document 2 is to carry out intermittent discharge during the idling time of the apparatus to raise the temperature of the reactor wall surface.
  • the reactor wall surface temperature (hereinafter referred to as saturation temperature) finally reached is generally determined by the average high-frequency power applied, and thus the substrate processing conditions.
  • the appropriate reactor wall temperature varies depending on the type.
  • the reactor wall surface temperature can be raised to an appropriate temperature for the processing conditions if the conditions for the next processing are known in advance. , It is difficult to set the target temperature when the conditions to be processed next are unknown. Further, when the saturation temperature in the preceding substrate processing condition is higher than the saturation temperature in the substrate processing condition to be processed next, the intermittent discharge during the idling time for the purpose of raising the temperature overheats the chamber wall surface temperature. Rather, it may promote the deviation of the etching amount between the substrates to be processed.
  • the present invention solves the above-mentioned problems of the prior art, and when the product processing of the substrate to be processed is completed, the idle time is sufficiently long and the reactor wall surface temperature is processed next.
  • the temperature drops significantly compared to the saturation temperature of the reactor wall surface under the product processing conditions, which is the processing condition for performing plasma treatment on the substrate to be processed, or the product processing conditions for the substrate to be processed next. It is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of reaching a target saturation temperature of a chamber wall surface temperature in a short time even when the temperature is unknown.
  • a plasma processing chamber provided with an electrode on which a substrate to be processed is placed, and a power supply unit for supplying power for plasma generation to the plasma processing chamber.
  • the control unit In a plasma processing apparatus provided with a control unit that controls the power supplied from the power supply unit to the plasma processing chamber, the control unit is in a state where the substrate to be processed is not placed on the electrodes inside the plasma processing chamber.
  • a heat-retaining discharge that controls the power supply unit under the first condition to generate a first plasma inside the plasma processing chamber to heat the inner wall surface of the plasma processing chamber to the first temperature, and a heat-retaining discharge inside the plasma processing chamber.
  • the power supply unit is controlled under the second condition in a state where the substrate to be processed is not placed on the electrodes, a second plasma is generated inside the plasma processing chamber, and the inner wall surface of the plasma processing chamber is formed on the first surface. Rapid temperature control discharge that heats to a second temperature higher than the temperature, and the power supply unit is controlled under the third condition with the substrate to be processed placed on the electrodes inside the plasma processing chamber. A product process that processes the substrate to be processed by generating a third plasma inside is executed.
  • the substrate to be processed in the method of processing the substrate to be processed using the plasma processing apparatus, is mounted on the electrode inside the plasma processing chamber of the plasma processing apparatus.
  • power is applied to the plasma processing chamber under the first condition to generate the first plasma inside the plasma processing chamber to heat the inner wall surface of the plasma processing chamber to the first temperature, and the plasma is generated.
  • a second plasma is generated inside the plasma processing chamber by applying power under the second condition in a state where the substrate to be processed is not placed on the electrodes inside the processing chamber, and the inner wall surface of the plasma processing chamber is formed.
  • a third temperature is heated to a second temperature higher than the temperature of 1, and power is applied under the third condition with the substrate to be processed placed on the electrodes inside the plasma processing chamber to enter the third inside the plasma processing chamber. Plasma was generated to process the substrate to be processed.
  • the idle time is sufficiently long and the reactor wall surface temperature is compared with the saturation temperature of the product processing conditions of the substrate to be processed next. Even when the temperature drops significantly, or when the product processing conditions of the substrate to be processed next are unknown, the chamber wall surface temperature can reach the target saturation temperature in a short time. It has become possible to stably maintain the yield in the etching process in a high state.
  • FIG. 1 It is a block diagram which shows the schematic structure of the microwave ECR plasma etching apparatus which concerns on embodiment of this invention.
  • (A) is a graph showing the relationship between the idling state and the product processing time of the substrate to be processed and the reactor wall surface temperature when the present invention is not applied, and (b) is the case where the present invention is not applied. It is a graph which shows the relationship between the wafer count and the etching amount. It is a flowchart which shows the flow
  • (A) is a graph showing the relationship between the idling state and the product processing time of the substrate to be processed and the reactor wall surface temperature when the present invention is applied, and (b) is the wafer count and etching when the present invention is applied. It is a graph which shows the relationship with a quantity.
  • a magnetic field is repeatedly supplied into the processing chamber at predetermined intervals to increase or decrease the intensity to form plasma and process the sample. It relates to a plasma processing apparatus and a plasma processing method.
  • the temperature of the chamber wall surface changes due to plasma input, but if the initial temperature of the lot is significantly dissociated from the saturation temperature of the lot, the same lot There is a difference in the etching rate, etc., which causes a decrease in yield.
  • this problem is solved by making the wall temperature reach near the saturation temperature of the same lot at the initial stage of the lot.
  • the plasma discharge generated by the high frequency power pulse-modulated so as to have a predetermined average power during the idling time before the lot processing After raising the temperature of the inner wall surface of the chamber by means of, plasma discharge is performed prior to the next lot processing to adjust the temperature of the inner wall surface of the chamber.
  • the power was set lower than the average input power of a plurality of lot processing conditions executed by the device, and the plasma discharge performed prior to the lot processing was set to the average input power of the lot processing conditions.
  • the temperature of the inner wall surface of the chamber at the start of lot processing can be adjusted to near the saturation temperature of the inner wall surface of the chamber under the lot processing conditions, and variations in the etching rate of the substrate to be processed in the lot can be suppressed. So, we have made it possible to improve the yield.
  • the temperature of the wall surface of the processing chamber is raised during idling by the plasma generated by the pulse-modulated high-frequency power, and then the high-frequency power is further controlled based on the lot processing conditions to control the temperature of the wall surface of the processing chamber.
  • the temperature was raised.
  • the temperature change of the processing chamber wall surface at the beginning and the end of the lot processing is reduced, and in the plasma processing, the variation in quality within the processing lot of the substrate to be processed due to the temperature change of the processing chamber wall surface is reduced. It is the one that was made.
  • the reactor wall surface temperature is generated by the plasma discharge formed by the pulse-modulated high-frequency power set to be a predetermined average power during the entire time when the prior processing is completed and the apparatus is in the idling state.
  • the temperature of the wall surface of the reactor is raised by plasma discharge generated with a predetermined electric power based on the product processing conditions of the substrate to be processed before starting the processing of the next substrate to be processed. ..
  • the predetermined power is characterized in that the time from the temperature of the reactor wall surface that has been raised in advance to the time when the target saturation temperature is reached becomes a predetermined value.
  • the idle time is sufficiently long and the reactor wall surface temperature is compared with the saturation temperature under the condition of the substrate to be processed next. Even if the temperature drops significantly or the processing conditions of the substrate to be processed next are unknown, the chamber wall surface temperature can be reached to the target saturation temperature in a short time for processing. Variations due to temperature dependence of the etching rate in the lot can be suppressed, and the yield in the etching process can be stably maintained in a high state.
  • FIG. 1 is a block diagram showing a schematic configuration of a microwave ECR plasma etching apparatus 100 according to an embodiment of the present invention.
  • the microwave ECR plasma etching apparatus 100 shown in FIG. 1 is etched at the upper part of the etching processing chamber 104, the microwave power supply 101, the waveguide 103 connecting the microwave power supply 101 and the etching processing chamber 104, and the etching processing chamber 104.
  • an electromagnetic coil 106 is provided on the outer periphery of the etching processing chamber 104 to generate a magnetic field inside the etching processing chamber 104.
  • An electrode 108 on which the substrate 107 to be processed is placed is provided inside the etching processing chamber 104, and the substrate 107 to be processed mounted on the electrode 108 is electrostatically adsorbed to the electrode 108 by the action of an electrostatic adsorption electrode (not shown).
  • the high frequency filter circuit 111 that cuts the high frequency power so that the high frequency power does not flow into the DC power supply 109, and the substrate 107 to be processed mounted on the electrode 108.
  • a high-frequency power supply 110 that applies the high-frequency power of the above to the electrode 108, and a matching circuit 112 that adjusts the high-frequency impedance of the electrode 108 with respect to the high-frequency power supply 110 are provided.
  • the electrode 108 is installed inside the etching processing chamber 104 by an insulating member (not shown).
  • the microwave ECR plasma etching apparatus 100 is a gas that controls the flow rate of the processing gas supplied from the gas supply unit 114 to the inside of the etching processing chamber 104 and the gas supply unit 114 that supplies the processing gas to the inside of the etching processing chamber 104.
  • a flow control unit 115 and a vacuum exhaust unit 116 that exhausts the inside of the etching processing chamber 104 to a vacuum are provided.
  • the microwave ECR plasma etching apparatus 100 includes a light emitting monitoring mechanism 102 for monitoring the plasma light emitting state inside the etching processing chamber 104, the etching state of the substrate 107 to be processed, and the like, and the inner wall surface (reactor wall surface) of the etching processing chamber 104. )
  • a temperature measuring device 113 for measuring the temperature of 1041 is provided.
  • Reference numeral 120 denotes a control unit, which controls a microwave power supply 101, an electromagnetic coil 106, a DC power supply 109, a high frequency power supply 110, a gas flow rate control unit 115, a vacuum exhaust unit 116, and the like. Further, for the control by the control unit 120 during idling or plasma processing, the signal received from the light emission monitor mechanism 102 or the temperature information of the reactor wall surface 1041 obtained by measuring with the temperature measuring instrument 113 may be used.
  • control unit 120 includes a storage unit 121, a calculation unit 122, and a CPU 133.
  • the storage unit 121 contains a program for processing the substrate 107 to be processed by the microwave ECR plasma etching apparatus 100, a microwave power supply 101, an electromagnetic coil 106, a DC power supply 109, a high frequency power supply 110, a gas flow control unit 115, and a vacuum.
  • Product processing conditions that control the exhaust unit 116 and the like are registered and stored.
  • the arithmetic unit 122 performs various arithmetic processing, and as an example, based on the product processing conditions stored in the storage unit 121, the average high-frequency power for generating plasma to be input from the microwave power supply 101 at the time of heat-retaining discharge described later. , And the average high frequency power for plasma generation input from the microwave power supply 101 to the rapid temperature control discharge is calculated.
  • the CPU 133 includes a microwave power supply 101, an electromagnetic coil 106, a DC power supply 109, and a high frequency based on a program and product processing conditions for processing the substrate 107 to be processed by the microwave ECR plasma etching apparatus 100 stored in the storage unit 121. It controls the power supply 110, the gas flow control unit 115, the vacuum exhaust unit 116, and the like.
  • the control unit 120 has a microwave power supply 101, an electromagnetic coil 106, a DC power supply 109, and a high frequency based on the average high frequency power at the time of heat retention discharge and the average high frequency power at the time of rapid temperature control discharge calculated by the calculation unit 122. Controls the power supply 110 and the like. At this time, feedback control may be performed using the temperature information of the reactor wall surface 1041 obtained by measuring with the temperature measuring instrument 113. Further, the signal received from the light emission monitoring mechanism 102 is processed to detect the end point of the processing of the substrate 107 to be processed by the microwave ECR plasma etching apparatus 100, and the microwave power supply 101, the electromagnetic coil 106, the DC power supply 109, and the high frequency are detected. The operation of the power supply 110 and the like may be stopped.
  • the microwave power is oscillated from the microwave power supply 101, and the transmitted microwave power is transmitted to the etching processing chamber 104 through the waveguide 103. Will be done.
  • the etching processing chamber 104 there is a dielectric window 105 for enclosing the etching gas in the lower part of the etching processing chamber 104, and with this as a boundary, the inside of the etching processing chamber 104 below the dielectric window 105 is evacuated. It is exhausted by the unit 116 and held in a vacuum state.
  • the waveguide 103 is provided in a state where the etching processing gas whose flow rate is controlled by the gas flow rate control unit 115 is supplied from the gas supply unit 114 to the inside of the etching processing chamber 104 held in this vacuum state at a predetermined flow rate.
  • the propagated waveguide power passes through the dielectric window 105 and is introduced into the etching processing chamber 104.
  • An electromagnetic coil 106 is arranged around the etching processing chamber 104.
  • An electron cyclotron resonance is generated by the magnetic field formed inside the etching processing chamber 104 by the electromagnetic coil 106 and the microwave power introduced into the etching processing chamber 104 through the dielectric window 105.
  • the light emitting state of the plasma inside the etching processing chamber 104, the light emitting state associated with the etching process of the substrate 107 to be processed mounted on the electrode 108, and the like are monitored by the light emitting monitor mechanism 102.
  • the control unit 120 receives the light emission monitor signal from the light emission monitor mechanism 102 and detects the end point of the etching process for the substrate 107 to be processed.
  • FIG. 1 an example in which this embodiment is not applied is shown in FIG.
  • the temperature (reactor wall surface temperature) 201 of the reactor wall surface 1041 which is the inner wall surface of the etching processing chamber 104 is set. It descends as the idling time of 211,213 elapses.
  • the reactor wall surface temperature 201 is increased as the number of substrates to be processed increases at the product processing times 212 and 214. Is rising. That is, as shown in FIG. 2, the reactor wall surface temperature 201 is the lowest at the processing time point 202 of the first substrate to be processed, and the reactor wall surface temperature 201 is the lowest at the processing time point 202 of the first sheet at the processing time point 203 of the tenth sheet. The temperature is raised as compared with the wall surface temperature 201, and at the time of processing 204 on the 25th sheet, the temperature is further raised to be substantially equal to the saturation temperature 209.
  • the etching amount of the substrate to be processed depends on the temperature, for example, the etching amount 205 of the first substrate to be processed is the lowest, and the etching amount 206 of the tenth substrate is the first substrate.
  • the etching amount is slightly higher than the etching amount, and the etching amount 207 of the 25th substrate to be processed is further higher than the etching amount 205 of the first sheet and the etching amount 206 of the 10th sheet.
  • a significant discrepancy 208 occurs in the etching amounts of the first and 25th substrates to be processed.
  • the temperature of the reactor wall surface 1041 is adjusted by plasma discharge formed by high-frequency power pulse-modulated and set to have a predetermined average power during a period in which the prior processing is completed and the apparatus is in an idling state.
  • the inner wall surface of the reactor is generated by plasma discharge generated with a predetermined electric power based on the processing conditions of the substrate to be processed. Is designed to raise the temperature.
  • any gas may be used as the gas to be introduced into the processing chamber at the time of rapid temperature control discharge, but at this time, especially when a gas having the same or similar properties as the product processing conditions is used, the rapid temperature control discharge is performed in the treatment chamber. It can also serve as an atmosphere adjustment (seasoning).
  • the etching process of the substrate to be processed of the previous lot is completed by the microwave ECR plasma etching apparatus 100, and the substrate to be processed after this process is carried out from the inside of the etching processing chamber 104, and then a predetermined time elapses.
  • the control unit 120 controls the microwave power supply 101 to start pulse-modulated heat-retaining discharge inside the etching processing chamber 104.
  • the temperature of the reactor wall surface 1041 is controlled to a predetermined temperature (S301). This step S301 is called a heat retention discharge step.
  • the start of discharge in this heat-retaining discharge step is preferably immediately after the substrate 107 to be processed is carried out from the inside of the etching processing chamber 104, but is not limited to this.
  • the average high-frequency power for plasma generation (hereinafter referred to as the average source power) input from the microwave power supply 101 during this heat-retaining discharge period is among the product processing conditions registered in advance in the storage unit 121 of the control unit 120. It is desirable to set it equal to or higher than the lowest average source power, and it is desirable not to exceed the highest average source power among the product processing conditions registered in advance in the storage unit 121 of the control unit 120. .. This is to quickly bring the temperature of the reactor wall surface 1041 to a predetermined target temperature range in the rapid temperature control discharge (S302) to be carried out next.
  • the average source power at this time is equal to the multiplication value of the source power for plasma generation output from the microwave power supply 101 and the duty of its pulse modulation.
  • the average source power of the heat retention / discharging step S301 is equal to the average source power of the product processing conditions of the substrate to be processed. ..
  • the target temperature range in this embodiment is a range of allowable values set in advance with respect to the saturation temperature, which is the temperature at which the reactor wall surface 1041 is saturated when the substrate to be processed is processed under the product processing conditions of the target substrate to be processed. It refers to the temperature range that falls within.
  • the start signal of the next process is checked during the heat-retaining discharge (S302), and the process of the heat-retaining discharge step S301 is continued until the start signal of the next process is received (NO in S302).
  • the rapid temperature control discharge is started immediately (S303).
  • This step S303 is called a rapid temperature control / discharging step.
  • the period of the heat-retaining discharge process of S301 and the period of the rapid temperature control / discharge process of S303 are collectively referred to as an idling state period.
  • the rapid temperature control / discharging step (S303) performed before starting the processing of the next substrate to be processed in order to prevent the temperature of the reactor wall surface 1041 from exceeding the above-mentioned target temperature range, the product processing of the substrate to be processed is performed.
  • the temperature of the reactor wall surface 1041 is raised by the plasma discharge generated by setting the average source power of the conditions.
  • the reactor is at the time of processing the first substrate to be processed in the processing of the next substrate 107 to be processed. Since the temperature of the wall surface 1041 is within the target temperature range, it is possible to process the first substrate to be processed and the last substrate to be processed in a series of processing of the substrates to be processed with almost the same quality. can.
  • the average source power of the heat retention / discharging step S301 is equal to the average source power of the product processing conditions of the substrate to be processed.
  • the average source power in the rapid adjustment discharge step S303 continues the average source power set in the heat retention discharge step S301.
  • the substrate 107 to be processed is carried into the etching processing chamber 104 (S304) and placed on the electrode 108.
  • the control unit 120 operates the DC power supply 109 to electrostatically attract the substrate 107 to be processed to the electrode 108, and the vacuum exhaust unit 116 etches from the gas supply unit 114 while exhausting the inside of the etching processing chamber 104 to a vacuum.
  • a processing gas is supplied to the inside of the processing chamber 104, and the electromagnetic coil 106 is energized to generate a magnetic field inside the etching processing chamber 104.
  • the microwave power transmitted from the microwave power supply 101 is supplied to the inside of the etching processing chamber 104 from the dielectric window 105 through the waveguide 103. Electron cyclotron resonance is generated by the magnetic field formed inside the etching processing chamber 104 and the microwave power introduced inside the etching processing chamber 104, and the etching gas introduced into the etching processing chamber 104 is efficiently plasma. Can be etched.
  • the amount of ions (ions) incident from the plasma on the substrate 107 to be processed mounted on the electrode 108 is adjusted by controlling the control unit 120 to adjust the high frequency power applied from the high frequency power supply 110 to the electrode 108.
  • the current) is adjusted to perform plasma treatment on the substrate 107 to be processed under conditions suitable for processing the substrate 107 to be processed (S305).
  • This process is called a product processing process.
  • the light emission monitoring mechanism 102 is used to monitor the light emission state of the plasma during the plasma processing. When the emission monitor mechanism 102 detects the end point of the plasma processing on the substrate 107 to be processed, the control unit 120 controls the plasma processing to end the plasma processing.
  • the substrate 107 to be processed after the product processing step S305 is carried out from the etching processing chamber 104 by using a carrying-out means (not shown) (S306).
  • step S301 If there are no unprocessed substrates in the lot (NO in S307), it is determined whether there is a next processing lot (S308), and if there is a next processing lot (YES in S308), Returning to S301, the heat-retaining discharge step is executed in step S301 for a time until the next processing lot is charged into the etching processing chamber 104.
  • the average source power input from the microwave power supply 101 to the etching processing chamber 104 in the rapid temperature control / discharging step of S303 is the average source power of the product processing conditions of the substrate to be processed next.
  • the calculation unit 122 calculates the time from the temperature of the reactor wall surface 1041 raised by the heat-retaining discharge obtained by the temperature measuring device 113 until the target saturation temperature range is reached to a predetermined value. It may be set to the value obtained by.
  • the reactor obtained by measuring with the temperature measuring instrument 113 in the idling state time 411 of the heat retention discharge step of S301 and the rapid temperature control discharge step of S303 and the substrate processing period 412 in the product processing step of S305.
  • the temperature transition 401 of the wall surface 1041 is shown in FIG.
  • the reactor wall surface 1041 is adjusted so that the average temperature 403 becomes a certain constant temperature.
  • the average temperature 403 of the reactor wall surface 1041 at this time is uniquely determined by the average source power input in the heat retention / discharge step S301 during the heat retention / discharge period 404.
  • the average source power at this time is preferably equal to the lowest average source power among the substrate processing conditions registered in advance in the control unit 120, and is controlled even when it is higher than the lowest average source power. It is desirable not to exceed the highest average source power among the basic processing conditions registered in advance in the unit 120.
  • Running warmth discharge step (S301) (running incubated discharge period 404 at time 411 the idling state), (YES in S302) when receiving a start signal for the next processing at time T 0, kept discharge moved immediately rapid temperature control discharge process to end the period 404 (S303), rapid temperature control discharge is performed over a predetermined time 405 until time T 1.
  • the time 405 for executing the rapid temperature control / discharging step (S303) may be the time stored in the preset storage unit 121 or the time obtained by the calculation unit 122.
  • the difference between the average temperature 403 set in the heat retention discharge step (S301) and the saturation temperature 402 of the reactor wall surface 1041 according to the product processing conditions of the substrate 107 to be processed, and the rapid temperature control / discharge step It is obtained based on the temperature rise characteristic of the reactor wall surface 1041 according to the discharge conditions in (S303).
  • the saturation temperature 402 of the reactor wall surface 1041 according to the product processing conditions of the substrate 107 to be processed in the product processing step (S305) and the temperature rise characteristic of the reactor wall surface 1041 according to the discharge conditions in the rapid temperature control discharge step (S303) are The discharge conditions are shaken in advance to generate plasma, and the temperature measuring device 113 measures and obtains the data.
  • the discharge conditions and the temperature rise data of the reactor wall surface 1041 stored in the storage unit 121 are used for the measurement. Can be done.
  • FIG. 5 shows the temperature transition 501 of the reactor wall surface 1041 obtained by measuring with the temperature measuring instrument 113 in this embodiment, and the etching amount 505 of the first substrate to be processed 107 in the product processing step (S305).
  • the etching amount 506 of the 10th processed substrate 107 of the product treatment and the etching amount 507 of the 25th processed substrate 107 of the product processing are shown.
  • the temperature of the reactor wall surface 1041 is maintained at a constant temperature by the heat retention discharge step (S301) during the idling state time 411, and the rapid temperature control / discharge step (sudden temperature control / discharge step) immediately before the start of the product processing.
  • the temperature 502 of the reactor wall surface 1041 at the time of the first product processing becomes extremely close to the saturation temperature 509 of the product processing conditions.
  • the difference between the temperature 502 of the reactor wall surface 1041 at the time of the first product treatment, the temperature 503 of the reactor wall surface 1041 at the time of the 10th product treatment, and the temperature 504 of the reactor wall surface 1041 at the time of the 25th product treatment is the present. It is extremely small as compared with the case where the embodiment is not applied. At this time, when the etching amount of the substrate 107 to be processed depends on the temperature, the difference 508 between the etching amount 505 of the first sheet and the etching amount 507 of the 25th sheet does not apply to this embodiment. It is extremely small compared to.
  • the temperature of the chamber wall surface changes due to plasma input, so that the initial temperature in the lot processing becomes a lot.
  • the saturation temperature in the treatment it has become possible to prevent a phenomenon in which a difference in etching rate or the like occurs within the same lot, which causes a decrease in yield.
  • the saturation temperature of the reactor wall surface 1041 reached when the temperature of the reactor wall surface 1041 at the start of processing of the lot of the substrate to be processed is continued under the product processing conditions of the substrate lot to be processed.
  • the temperature can be adjusted to a close value, the variation due to the temperature dependence of the etching rate in the lot can be suppressed, and the yield in the etching process can be stably maintained in a high state.
  • Microwave ECR plasma etching device 101 Microwave power supply 102 Light emission monitoring mechanism 103 Waveguide 104 Etching processing chamber 105 Dielectric window 106 Electromagnetic coil 107 Processed substrate 108 Electrode 109 DC power supply 110 High frequency power supply 111 High frequency filter circuit 112 Matching circuit 113 Temperature measuring instrument 120 control unit

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  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Measuring Oxygen Concentration In Cells (AREA)
  • Treatment Of Fiber Materials (AREA)
PCT/JP2020/003894 2020-02-03 2020-02-03 プラズマ処理装置およびプラズマ処理方法 Ceased WO2021156906A1 (ja)

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KR1020217002241A KR102614972B1 (ko) 2020-02-03 2020-02-03 플라스마 처리 장치 및 플라스마 처리 방법
US17/275,420 US12154765B2 (en) 2020-02-03 2020-02-03 Plasma processing apparatus and plasma processing method
CN202080004147.1A CN113498546B (zh) 2020-02-03 2020-02-03 等离子处理装置以及等离子处理方法
TW110103760A TWI818230B (zh) 2020-02-03 2021-02-02 電漿處理裝置及電漿處理方法
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KR102614972B1 (ko) 2023-12-19
CN113498546B (zh) 2024-04-12
US12154765B2 (en) 2024-11-26
KR20210102179A (ko) 2021-08-19
TWI818230B (zh) 2023-10-11
CN113498546A (zh) 2021-10-12
US20220359166A1 (en) 2022-11-10

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