JPWO2021156906A1 - - Google Patents
Info
- Publication number
- JPWO2021156906A1 JPWO2021156906A1 JP2021514444A JP2021514444A JPWO2021156906A1 JP WO2021156906 A1 JPWO2021156906 A1 JP WO2021156906A1 JP 2021514444 A JP2021514444 A JP 2021514444A JP 2021514444 A JP2021514444 A JP 2021514444A JP WO2021156906 A1 JPWO2021156906 A1 JP WO2021156906A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/003894 WO2021156906A1 (ja) | 2020-02-03 | 2020-02-03 | プラズマ処理装置およびプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021156906A1 true JPWO2021156906A1 (https=) | 2021-08-12 |
| JP7013618B2 JP7013618B2 (ja) | 2022-01-31 |
Family
ID=77199911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021514444A Active JP7013618B2 (ja) | 2020-02-03 | 2020-02-03 | プラズマ処理装置およびプラズマ処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12154765B2 (https=) |
| JP (1) | JP7013618B2 (https=) |
| KR (1) | KR102614972B1 (https=) |
| CN (1) | CN113498546B (https=) |
| TW (1) | TWI818230B (https=) |
| WO (1) | WO2021156906A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12014898B2 (en) * | 2021-09-27 | 2024-06-18 | Applied Materials, Inc. | Active temperature control for RF window in immersed antenna source |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088232A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマ処理方法 |
| JPH09172003A (ja) * | 1995-09-05 | 1997-06-30 | Applied Materials Inc | プラズマ処理における温度制御の方法及び装置 |
| JPH10130872A (ja) * | 1996-10-29 | 1998-05-19 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
| JP2010219198A (ja) * | 2009-03-16 | 2010-09-30 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP2013141010A (ja) * | 2013-03-11 | 2013-07-18 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| JP2016103496A (ja) * | 2014-11-27 | 2016-06-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3854017B2 (ja) * | 1999-09-13 | 2006-12-06 | 株式会社日立製作所 | プラズマ処理装置およびプラズマ処理方法 |
| JP3708031B2 (ja) | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| JP4490704B2 (ja) | 2004-02-27 | 2010-06-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP4490938B2 (ja) * | 2006-04-20 | 2010-06-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5220447B2 (ja) | 2008-03-17 | 2013-06-26 | 東京エレクトロン株式会社 | 基板処理システムの洗浄方法、記憶媒体及び基板処理システム |
| JP2009277889A (ja) * | 2008-05-15 | 2009-11-26 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理装置の制御方法 |
| JP5279627B2 (ja) | 2009-06-18 | 2013-09-04 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
| JP5334787B2 (ja) | 2009-10-09 | 2013-11-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5530794B2 (ja) | 2010-04-28 | 2014-06-25 | 株式会社日立ハイテクノロジーズ | 真空処理装置及びプラズマ処理方法 |
| JP5813389B2 (ja) | 2011-06-24 | 2015-11-17 | 東京エレクトロン株式会社 | 基板処理時間設定方法及び記憶媒体 |
| KR102102003B1 (ko) | 2012-05-25 | 2020-04-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치, 및 플라즈마 처리 방법 |
| JP6035606B2 (ja) * | 2013-04-09 | 2016-11-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| JP6539113B2 (ja) * | 2015-05-28 | 2019-07-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6298867B2 (ja) * | 2016-10-06 | 2018-03-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
-
2020
- 2020-02-03 JP JP2021514444A patent/JP7013618B2/ja active Active
- 2020-02-03 CN CN202080004147.1A patent/CN113498546B/zh active Active
- 2020-02-03 KR KR1020217002241A patent/KR102614972B1/ko active Active
- 2020-02-03 US US17/275,420 patent/US12154765B2/en active Active
- 2020-02-03 WO PCT/JP2020/003894 patent/WO2021156906A1/ja not_active Ceased
-
2021
- 2021-02-02 TW TW110103760A patent/TWI818230B/zh active
-
2024
- 2024-10-21 US US18/921,861 patent/US20250046580A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088232A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマ処理方法 |
| JPH09172003A (ja) * | 1995-09-05 | 1997-06-30 | Applied Materials Inc | プラズマ処理における温度制御の方法及び装置 |
| JPH10130872A (ja) * | 1996-10-29 | 1998-05-19 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
| JP2010219198A (ja) * | 2009-03-16 | 2010-09-30 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP2013141010A (ja) * | 2013-03-11 | 2013-07-18 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| JP2016103496A (ja) * | 2014-11-27 | 2016-06-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202131763A (zh) | 2021-08-16 |
| JP7013618B2 (ja) | 2022-01-31 |
| US20250046580A1 (en) | 2025-02-06 |
| KR102614972B1 (ko) | 2023-12-19 |
| CN113498546B (zh) | 2024-04-12 |
| US12154765B2 (en) | 2024-11-26 |
| WO2021156906A1 (ja) | 2021-08-12 |
| KR20210102179A (ko) | 2021-08-19 |
| TWI818230B (zh) | 2023-10-11 |
| CN113498546A (zh) | 2021-10-12 |
| US20220359166A1 (en) | 2022-11-10 |
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