JPWO2021156906A1 - - Google Patents

Info

Publication number
JPWO2021156906A1
JPWO2021156906A1 JP2021514444A JP2021514444A JPWO2021156906A1 JP WO2021156906 A1 JPWO2021156906 A1 JP WO2021156906A1 JP 2021514444 A JP2021514444 A JP 2021514444A JP 2021514444 A JP2021514444 A JP 2021514444A JP WO2021156906 A1 JPWO2021156906 A1 JP WO2021156906A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021514444A
Other versions
JP7013618B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021156906A1 publication Critical patent/JPWO2021156906A1/ja
Application granted granted Critical
Publication of JP7013618B2 publication Critical patent/JP7013618B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2021514444A 2020-02-03 2020-02-03 プラズマ処理装置およびプラズマ処理方法 Active JP7013618B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/003894 WO2021156906A1 (ja) 2020-02-03 2020-02-03 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
JPWO2021156906A1 true JPWO2021156906A1 (ja) 2021-08-12
JP7013618B2 JP7013618B2 (ja) 2022-01-31

Family

ID=77199911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021514444A Active JP7013618B2 (ja) 2020-02-03 2020-02-03 プラズマ処理装置およびプラズマ処理方法

Country Status (6)

Country Link
US (1) US20220359166A1 (ja)
JP (1) JP7013618B2 (ja)
KR (1) KR102614972B1 (ja)
CN (1) CN113498546B (ja)
TW (1) TWI818230B (ja)
WO (1) WO2021156906A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12014898B2 (en) * 2021-09-27 2024-06-18 Applied Materials, Inc. Active temperature control for RF window in immersed antenna source

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
JPH09172003A (ja) * 1995-09-05 1997-06-30 Applied Materials Inc プラズマ処理における温度制御の方法及び装置
JPH10130872A (ja) * 1996-10-29 1998-05-19 Sumitomo Metal Ind Ltd プラズマ処理方法
JP2010219198A (ja) * 2009-03-16 2010-09-30 Hitachi High-Technologies Corp プラズマ処理装置
JP2013141010A (ja) * 2013-03-11 2013-07-18 Hitachi High-Technologies Corp プラズマ処理方法
JP2016103496A (ja) * 2014-11-27 2016-06-02 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3854017B2 (ja) * 1999-09-13 2006-12-06 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
JP4490938B2 (ja) * 2006-04-20 2010-06-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2009277889A (ja) * 2008-05-15 2009-11-26 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理装置の制御方法
US9984906B2 (en) * 2012-05-25 2018-05-29 Tokyo Electron Limited Plasma processing device and plasma processing method
JP6035606B2 (ja) * 2013-04-09 2016-11-30 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6298867B2 (ja) * 2016-10-06 2018-03-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
JPH09172003A (ja) * 1995-09-05 1997-06-30 Applied Materials Inc プラズマ処理における温度制御の方法及び装置
JPH10130872A (ja) * 1996-10-29 1998-05-19 Sumitomo Metal Ind Ltd プラズマ処理方法
JP2010219198A (ja) * 2009-03-16 2010-09-30 Hitachi High-Technologies Corp プラズマ処理装置
JP2013141010A (ja) * 2013-03-11 2013-07-18 Hitachi High-Technologies Corp プラズマ処理方法
JP2016103496A (ja) * 2014-11-27 2016-06-02 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
JP7013618B2 (ja) 2022-01-31
TWI818230B (zh) 2023-10-11
KR20210102179A (ko) 2021-08-19
TW202131763A (zh) 2021-08-16
KR102614972B1 (ko) 2023-12-19
CN113498546B (zh) 2024-04-12
US20220359166A1 (en) 2022-11-10
CN113498546A (zh) 2021-10-12
WO2021156906A1 (ja) 2021-08-12

Similar Documents

Publication Publication Date Title
BR112021014123A2 (ja)
BR102021018859A2 (ja)
BR102021015500A2 (ja)
BR112022009896A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
JPWO2021156906A1 (ja)
BR112023011610A2 (ja)
BR102021020147A2 (ja)
BR102021018926A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016200A2 (ja)
BR102021016176A2 (ja)
BR102021015566A2 (ja)
BR102021015450A8 (ja)
BR102021015220A2 (ja)
BR102021015247A2 (ja)
BR102021014044A2 (ja)
BR102021014056A2 (ja)
BR102021013929A2 (ja)
JPWO2023286182A1 (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210315

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210315

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211221

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220119

R150 Certificate of patent or registration of utility model

Ref document number: 7013618

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150