WO2021080286A1 - 반도체용 접착제 조성물 및 이의 경화물을 포함하는 반도체용 접착 필름 - Google Patents
반도체용 접착제 조성물 및 이의 경화물을 포함하는 반도체용 접착 필름 Download PDFInfo
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08G59/621—Phenols
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- C09J133/04—Homopolymers or copolymers of esters
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
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- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Definitions
- the present invention claims the benefit of the filing date of Korean Patent Application No. 10-2019-0131506 filed with the Korean Intellectual Property Office on October 22, 2019, all of which are included in the present invention.
- the present invention relates to an adhesive composition for semiconductors and an adhesive film for semiconductors comprising a cured product thereof, and specifically, for semiconductors capable of removing voids generated between an adherend and an adhesive and reducing bleed-out of the adhesive composition for semiconductors It relates to an adhesive composition for semiconductors including an adhesive composition and a cured product thereof.
- the above-mentioned semiconductor chips are becoming smaller and thinner and higher in performance.
- the thickness of the semiconductor wafers is gradually reduced to 20 ⁇ m or less so that more chips can be stacked in the same package for the purpose of increasing the package capacity. It is becoming thinner.
- a method of fixing a controller on a substrate, covering it with an adhesive, and stacking a chip thereon Is applying.
- the technical problem to be achieved by the present invention is to provide an adhesive composition for semiconductors and an adhesive film for semiconductors including a cured product thereof for reducing voids and bleed-outs occurring in a three-dimensional mounting process of a semiconductor chip.
- An exemplary embodiment of the present invention provides an adhesive composition for semiconductors comprising a thermosetting resin, a thermoplastic resin, a curing agent and a nonionic surfactant.
- An exemplary embodiment of the present invention provides an adhesive film for semiconductors comprising a cured product of the adhesive composition for semiconductors according to an embodiment of the present invention.
- the surface tension of the adhesive composition for semiconductors may be improved by adding a nonionic surfactant.
- the adhesive film for semiconductors includes a cured product of the adhesive composition for semiconductors, thereby reducing voids that may occur in die bonding and bleed-out of the adhesive.
- FIG. 1 is a cross-sectional side view and a front view of a semiconductor device according to Examples 1 to 3;
- the glass transition temperature is measured by differential scanning calorimetry.
- An exemplary embodiment of the present invention provides an adhesive composition for semiconductors comprising a thermosetting resin, a thermoplastic resin, a curing agent and a nonionic surfactant.
- the semiconductor adhesive composition according to an exemplary embodiment of the present invention, by adding a thermosetting resin, a thermoplastic resin, a curing agent and a nonionic surfactant, the surface tension of the polymer of the semiconductor adhesive composition is improved, and the wettability of the semiconductor adhesive is reduced. Thus, the fillet length can be reduced.
- An exemplary embodiment of the present invention includes a nonionic surfactant.
- the nonionic surfactant may be one selected from the group consisting of polyoxyethylene alkyl ether, oleic acid diethanolamide, polysorbate, polyethylene glycol, hydroxyethyl cellulose, and combinations thereof. have.
- the content of the nonionic surfactant may be 0.1 parts by weight to 10 parts by weight based on 100 parts by weight of the total content of the thermosetting resin and the thermoplastic resin.
- the content of the nonionic surfactant is 1 part by weight to 9 parts by weight, 2 parts by weight to 8 parts by weight, 3 parts by weight to 8 parts by weight, 4 parts by weight to 100 parts by weight of the total content of the thermosetting resin and the thermoplastic resin. 7 parts by weight, 5 parts by weight to 6 parts by weight, 1 part by weight to 5 parts by weight, 5 parts by weight to 9 parts by weight, 8 parts by weight to 10 parts by weight, 9 parts by weight to 10 parts by weight, or 2 to 3 parts by weight It can be wealth.
- the surface tension of the semiconductor adhesive is improved and the wettability is reduced, thereby preventing the occurrence of voids between the controller and the adhesive during the semiconductor package formation process. And, it is possible to reduce the bleed out of the adhesive.
- the adhesive composition for semiconductor may further include a hydrophilic additive.
- a hydrophilic additive in the adhesive composition for semiconductors, the surface tension of the adhesive composition for semiconductors is improved, and the wettability of the adhesive for semiconductors decreases, thereby reducing the fillet length.
- the content of the hydrophilic additive may be 0.1 parts by weight to 20 parts by weight based on 100 parts by weight of the total content of the thermosetting resin and the thermoplastic resin. Specifically, 1 to 19 parts by weight, 2 to 18 parts by weight, 3 to 18 parts by weight, 4 to 17 parts by weight, 5 to 16 parts by weight based on 100 parts by weight of the semiconductor adhesive composition , 6 to 15 parts by weight, 7 to 14 parts by weight, 8 to 13 parts by weight, 9 to 12 parts by weight, or 10 to 11 parts by weight.
- the surface tension of the semiconductor adhesive is improved and the wettability is reduced, thereby preventing the occurrence of voids between the controller and the adhesive occurring in the process of forming a semiconductor package. , It can reduce the bleed out of the adhesive.
- the hydrophilic additive may be one selected from the group consisting of hydrophilic polymers, anionic surfactants, sugar alcohols, and combinations thereof. By selecting the hydrophilic additive from the above, it is possible to improve the surface tension of the semiconductor adhesive.
- the hydrophilic polymer may be one selected from the group consisting of a polyvinylpyrrolidone derivative compound, a polyvinyl alcohol derivative compound, a polyether derivative compound, a polysaccharide derivative compound, and combinations thereof.
- the anionic surfactant may be one selected from the group consisting of potassium lauryl acid, sodium lauryl sulfate, and combinations thereof.
- the sugar alcohol may be one selected from the group consisting of mannitol, xylitol, erythritol, sorbitol, trehalose, maltitol, and combinations thereof.
- An exemplary embodiment of the present invention includes a thermoplastic resin.
- the thermoplastic resin is polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acryl. It may include one selected from the group consisting of nitrile copolymer rubber, (meth)acrylate-based resin, and combinations thereof. More specifically, the thermoplastic resin may include a (meth)acrylate-based resin including a (meth)acrylate-based repeating unit having an epoxy-based functional group.
- the (meth)acrylate-based resin includes a (meth)acrylate-based repeating unit including an epoxy-based functional group, and has a glass transition temperature of -10°C to 30°C (meth) It may be an acrylate resin.
- the (meth)acrylate-based resin may include 0.1% to 30% by weight of a (meth)acrylate-based repeating unit including an epoxy-based functional group.
- the epoxy-based functional group may include an epoxy group or a glycidyl group.
- the thermoplastic resin may include a (meth)acrylate-based resin containing 0.1% to 30% by weight of a (meth)acrylate-based repeating unit having an epoxy-based functional group.
- thermosetting resin may be an epoxy resin.
- the epoxy resin is a bisphenol-based epoxy resin, a biphenyl-based epoxy resin, a naphthalene-based epoxy resin, a florene-based epoxy resin, a phenol novolak-based epoxy resin, a cresol novolak-based epoxy resin, and tris. It may be one selected from the group consisting of a hydroxylphenylmethane-based epoxy resin, a tetraphenylmethane-based epoxy resin, and a combination thereof.
- the bisphenol type epoxy resin is a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a hydrogenated bisphenol A type epoxy resin, a bisphenol AF type epoxy resin.
- the thermosetting resin may include a liquid epoxy resin having a viscosity of 1 mPa ⁇ s to 20,000 mPa ⁇ s at a temperature of 20°C to 25°C.
- a liquid epoxy resin under 10°C to 35°C and a solid epoxy resin under 10°C to 35°C are 1: 0.4 to 1 : Can be used by mixing in a weight ratio of 2.
- the weight ratio of the liquid epoxy and the solid epoxy resin within the above range, it is possible to prevent excessive resin flow during the die attach process, resulting in contamination, and the strong stickiness of the adhesive layer, thereby preventing remarkably deteriorating pick-up characteristics. Compatibility with resin and reactivity can be improved.
- the epoxy resin is a cresol novolak type epoxy resin having a softening point of 50 °C to 100 °C with a biphenyl-based epoxy resin having a softening point of 50 °C to 100 °C and 50 °C to 100 °C It may further include one or more epoxy resins selected from the group consisting of bisphenol A epoxy resins having a softening point of.
- the epoxy resin is a cresol novolak type epoxy resin having a softening point of 50 °C to 100 °C compared to the biphenyl-based epoxy resin having a softening point of 50 °C to 100 °C and 50 °C to 100 °C
- At least one epoxy resin selected from the group consisting of bisphenol A epoxy resins having a softening point of may be included in a weight ratio of 0.25 to 1.25, or 0.3 to 1.1.
- the epoxy resin may have an average epoxy equivalent of 100 to 1,000.
- the average epoxy equivalent can be obtained based on the weight ratio and epoxy equivalent of each epoxy resin contained in the epoxy resin.
- the adhesive composition for semiconductors may include a novolac-based phenol resin as the curing agent.
- the curing agent may include a novolac-based phenol resin having a softening point of 60°C to 150°C.
- the novolak-based phenol resin has a chemical structure in which a ring is located between reactive functional groups. Due to these structural characteristics, the novolac-based phenol resin can lower the hygroscopicity of the adhesive film, and can increase the stability in a high-temperature IR reflow process, thereby preventing peeling of the adhesive film or reflow cracking. Can play a role.
- the novolak-based phenol resin examples include a novolac phenol resin, a xylog novolac phenol resin, a cresol novolac phenol resin, a biphenyl novolac phenol resin, and a bisphenol A novolac phenol resin. And it may be one selected from the group consisting of a combination thereof.
- the novolac-based phenol resin may preferably have a softening point of 60°C or higher, or 60°C to 150°C, or 105°C to 150°C, or 70°C to 120°C. .
- the novolac-based phenolic resin having a softening point of 60° C. or higher allows sufficient heat resistance, strength, and adhesion after curing of the adhesive film.
- the softening point of the novolac-based phenol resin is too high, the fluidity of the adhesive film is lowered, and thus voids are created inside the adhesive in an actual semiconductor manufacturing process, which can greatly reduce the reliability or quality of the final product.
- the novolak-based phenol resin preferably has a hydroxyl equivalent weight of 80 g/eq to 300 g/eq and a softening point of 60°C to 150°C.
- the adhesive composition for semiconductor may further include a curing catalyst and an inorganic filler.
- the curing catalyst may accelerate the action of the curing agent or the curing of the semiconductor adhesive composition.
- the curing catalyst may be one selected from the group consisting of a phosphorus compound, a boron compound, a phosphorus-boron compound, an imidazole compound, and a combination thereof. More specifically, the curing catalyst is preferably 2-phenyl imidazole.
- the inorganic filler is alumina, silica, barium sulfate, magnesium hydroxide, magnesium carbonate, magnesium silicate, magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, aluminum hydroxide, aluminum nitride, It may include one selected from the group consisting of aluminum borate and combinations thereof.
- the inorganic filler may preferably have an average particle diameter (based on the longest outer diameter) of 0.1 ⁇ m to 10 ⁇ m, or 0.1 ⁇ m to 5.0 ⁇ m, or 0.1 ⁇ m to 2.0 ⁇ m. If the particle diameter of the inorganic filler is too small, it may be easily aggregated in the adhesive film. On the other hand, when the particle diameter of the inorganic filler is too large, damage to the semiconductor circuit and deterioration of adhesion of the adhesive film may be caused by the inorganic filler.
- the inorganic filler may include silica and magnesium carbonate in a weight ratio of 1: 0.001 to 1: 1.
- the weight ratio of silica and magnesium carbonate in the above-described range, it is possible to improve the mechanical properties of the adhesive film for semiconductors.
- a paint or a pigment may be applied to the adhesive film for semiconductors.
- the fillet of the material can be clearly observed, thereby reducing the defect rate and improving the work efficiency.
- an adhesive film may be provided that prevents the internal adhesive body from being projected and visible even outside the package through the application of the paint or pigment.
- a conventional blackening material for example, a reactive dye, azo dye, nigrosines, and perylene pigment (pigment), mixed-phase pigments (solid-solution pigments), aniylene black, perylene black, Brilliant Black BN, Reactive Black 5, SulfurBlackT, carbon black, and the like can be applied.
- the adhesive film for semiconductor may include a coupling agent.
- the type of the coupling agent is not particularly limited, but preferably 2-(3,4 epoxycyclohexyl)-ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxypropylmethyl- Dietoxysilane, 3-glycidoxypropyltriethoxysilane, N-2(aminoethyl)3-aminopropylmethyldimethoxysilane, N-2(aminoethyl)3-aminopropyl-trimethoxysilane, N- 2(aminoethyl)3-aminopropyltriethoxysilane, 3-aminopropyl-trimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxyly-N-(1,3 dimethyl-butyli Den)propylamine,
- Another embodiment of the present invention provides an adhesive film for semiconductors comprising a cured product of the adhesive composition for semiconductors.
- the adhesive film for semiconductors according to another exemplary embodiment of the present invention may reduce voids that may occur in die bonding and bleed out of the adhesive by using the adhesive film for semiconductors.
- the contact angle of the cured product with water may be 150 degrees or less.
- the contact angle of the cured product with water is greater than 0 degrees and less than 150 degrees, 10 degrees or more and 140 degrees or less, 20 degrees or more and 130 degrees or less, 30 degrees or more and 120 degrees or less, 40 degrees or more and 110 degrees or less, 50 degrees or more and 100 degrees.
- the contact angle of the adhesive composition for semiconductors with respect to water may be 150 degrees or less.
- thermoplastic resin (1) Manufacture of thermoplastic resin
- thermoplastic acrylate-based resin in which a glycidyl group was introduced into a branched chain was prepared.
- Phenol resin KH-6021 (made by DIC, bisphenol A novolac resin, hydroxyl equivalent 121 g/eq, softening point: 133°C) 50 g, liquid epoxy resin RE-310S (Japanese explosives product, bisphenol A epoxy resin) , Epoxy equivalent 180 g/eq, viscosity [25°C]: 15,000 mPa ⁇ s) 30 g, solid epoxy resin EOCN-104S (made in Japan explosives, cresol novolak type epoxy resin, epoxy equivalent 214 g/eq, softening point: 92 °C ) 30g, the thermoplastic acrylate resin 40g, silane coupling agent (KBM-403, Sen-Etsu Chemical, gamma-glycidoxypropyltrimethoxysilane) 1g, curing catalyst 2PZ (Shikoku Chemical, 2-phenyl imidazole) 0.2 g and 90 g of inorganic filler SC-2050 (Admatech, sp
- the prepared adhesive composition for semiconductors was applied on a release-treated polyethylene terephthalate film (38 ⁇ m in thickness) and dried at 110° C. for 3 minutes to obtain an adhesive film for semiconductors.
- the adhesive films for semiconductors were each manufactured with a thickness of 10 ⁇ m (first semiconductor device bonding film) and 110 ⁇ m (second semiconductor device bonding and first semiconductor device buried film).
- the adhesive film for semiconductors having a thickness of 10 ⁇ m was attached to one side of a square first semiconductor device (thickness 50 ⁇ m) having a side of 3 mm at a temperature of 70°C.
- the first semiconductor device was adhered to the BGA substrate via the adhesive film.
- adhesion was performed by pressing for 1 second at a pressure of 1 kgf at a temperature of 125°C.
- the BGA substrate to which the first semiconductor device was adhered was subjected to heat treatment at a temperature of 125° C. for 1 hour with a dryer to heat-cure the adhesive film.
- wire bonding was performed on the first semiconductor device with a diameter of 23 ⁇ m wire at a pitch of 100 ⁇ m using a wire bonder (Shingawa Co., Ltd., trade name UTC-1000) at a temperature of 150°C.
- the adhesive film for semiconductors having a thickness of 110 ⁇ m was attached to one side of a square second semiconductor device (80 ⁇ m thick) having a side of 10 mm.
- the second semiconductor device was adhered so that the first semiconductor device on the BGA substrate is buried through the adhesive film. That is, the first semiconductor device is buried between the second semiconductor device and the BGA substrate by the adhesion.
- adhesion was performed by pressing for 1 second at a pressure of 2 kgf at a temperature of 110 °C.
- polyethylene glycol Sigma-Aldrich, Triton X-100
- TWEEN 80 polysorbate
- the semiconductor device was manufactured in the same manner as in Example 1, except that about 2 parts by weight based on 100 parts by weight of the total content of the solid epoxy resin and the thermoplastic acrylate resin was included.
- the semiconductor device was manufactured in the same manner as in Example 1 except that the nonionic surfactant was not included in Example 1 above.
- the BGA substrate to which the second semiconductor element is adhered is heat-treated at 135°C for 1 hour and 7 atm with a pressure dryer to heat-cure the adhesive film to obtain a semiconductor device.
- a pressure dryer to heat-cure the adhesive film to obtain a semiconductor device.
- the number of specimens in which voids in the adhesive layer were observed was measured using an ultrasonic imaging equipment SAT (Scan Acoustic Tomograph).
- SAT Scan Acoustic Tomograph
- the observation of the voids was based on the results of imaging by measuring the specimen in a transmission mode using a sonifer while immersed in distilled water.
- FIG. 1 is a side cross-sectional view and a front view of a semiconductor package in which an adhesive film for semiconductors according to Examples 1 to 3 is used.
- the void 1 did not occur between the controller 17 and the adhesive film, and it was confirmed that the bleed-out of the semiconductor adhesive composition 111 was reduced.
- FIG. 2 is a side cross-sectional view and a front view of a semiconductor package in which an adhesive film for semiconductors according to Comparative Examples 1 to 3 is used.
- Comparative Examples 1 to 3 it was confirmed that a void 1 occurred between the controller 17 and the conventional adhesive film 11, and bleed-out of the adhesive occurred, thereby increasing the length of the fillet.
- Comparative Example 1 did not contain a nonionic surfactant, so that the fillet amount increased, and Comparative Example 2 contained a very small amount of the nonionic surfactant, so that the fillet amount was confirmed to increase.
- the nonionic surfactant component was spread out in Comparative Example 3 by excessively containing a nonionic surfactant.
- controller first semiconductor element
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Abstract
Description
매립성 평가 | 필렛양 측정(㎛) | |
실시예 1 | O | 59 |
실시예 2 | O | 50 |
실시예 3 | O | 58 |
비교예 1 | X | 65 |
비교예 2 | X | 64 |
비교예 3 | X | - |
Claims (11)
- 열경화성 수지, 열가소성 수지, 경화제 및 비이온성 계면활성제를 포함하는 반도체용 접착제 조성물.
- 청구항 1에 있어서,상기 비이온성 계면활성제의 함량은 상기 열경화성 수지 및 열가소성 수지 총 함량 100 중량부 대비 0.1 중량부 내지 10 중량부인 것인 반도체용 접착제 조성물.
- 청구항 1에 있어서,상기 비이온성 계면활성제는 폴리옥시에틸렌알킬에테르, 올레인산디에탄올아미드, 폴리소르베이트, 폴리에틸렌 글리콜, 하이드록시 에틸 셀룰로오스 및 이들의 조합으로 이루어진 군으로부터 선택된 하나인 것인 반도체용 접착제 조성물.
- 청구항 1에 있어서,상기 열가소성 수지는 에폭시계 작용기를 갖는 (메트)아크릴레이트계 반복 단위를 0.1 중량% 내지 30 중량% 포함한 (메트)아크릴레이트계 수지를 포함하는 것인 반도체용 접착제 조성물.
- 청구항 1에 있어서,상기 열경화성 수지는 20 ℃ 내지 25 ℃의 온도 하에서 1 mPa·s 내지 20,000 mPa·s의 점도를 갖는 액상 에폭시 수지를 포함하는 것이고,상기 경화제는 60 ℃ 내지 150 ℃의 연화점을 갖는 노볼락계 페놀 수지를 포함하는 것인 반도체용 접착제 조성물.
- 청구항 1에 있어서,상기 반도체용 접착제 조성물은 경화 촉매 및 무기 충전재를 더 포함하는 것인 반도체용 접착제 조성물.
- 청구항 6에 있어서,상기 경화 촉매는 인계 화합물, 붕소계 화합물, 인-붕소계 화합물, 이미다졸계 화합물 및 이들의 조합으로 이루어진 군으로부터 선택된 하나를 포함하는 것인 반도체용 접착제 조성물.
- 청구항 6에 있어서,상기 무기 충전재는 알루미나, 실리카, 황산바륨, 수산화 마그네슘, 탄산 마그네슘, 규산 마그네슘, 산화 마그 네슘, 규산 칼슘, 탄산 칼슘, 산화 칼슘, 수산화 알루미늄, 질화 알루미늄, 붕산 알루미늄 및 이들의 조합으로 이루어진 군으로부터 선택된 하나를 포함하는 것인 반도체용 접착제 조성물.
- 청구항 8에 있어서,상기 무기 충전재는 실리카 및 탄산 마그네슘을 1 : 0.001 내지 1 : 1의 중량비로 포함하는 것인 반도체용 접착제 조성물.
- 청구항 1 내지 청구항 9 중 어느 한 한의 반도체용 접착제 조성물의 경화물을 포함하는 반도체용 접착 필름.
- 청구항 10에 있어서,상기 경화물의 물에 대한 접촉각이 150도 이하인 것인 반도체용 접착 필름.
Priority Applications (3)
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US17/769,445 US20230174834A1 (en) | 2019-10-22 | 2020-10-20 | Semiconductor adhesive composition and semiconductor adhesive film comprising cured product thereof |
JP2022513340A JP7331248B2 (ja) | 2019-10-22 | 2020-10-20 | 半導体用接着剤組成物およびその硬化物を含む半導体用接着フィルム |
CN202080060618.0A CN114286848B (zh) | 2019-10-22 | 2020-10-20 | 半导体粘合剂组合物和包含其固化产物的半导体粘合剂膜 |
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KR1020190131506A KR20210048012A (ko) | 2019-10-22 | 2019-10-22 | 반도체용 접착제 조성물 및 이를 이용한 반도체용 접착 필름 |
KR10-2019-0131506 | 2019-10-22 |
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US (1) | US20230174834A1 (ko) |
JP (1) | JP7331248B2 (ko) |
KR (1) | KR20210048012A (ko) |
CN (1) | CN114286848B (ko) |
TW (1) | TWI846974B (ko) |
WO (1) | WO2021080286A1 (ko) |
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KR20240076487A (ko) | 2022-11-22 | 2024-05-30 | 주식회사 이엔에프테크놀로지 | 폴리카르보디이미드 화합물 및 이를 포함하는 이중경화형 에폭시 접착제 조성물 |
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- 2019-10-22 KR KR1020190131506A patent/KR20210048012A/ko not_active Application Discontinuation
-
2020
- 2020-10-20 WO PCT/KR2020/014322 patent/WO2021080286A1/ko active Application Filing
- 2020-10-20 US US17/769,445 patent/US20230174834A1/en active Pending
- 2020-10-20 CN CN202080060618.0A patent/CN114286848B/zh active Active
- 2020-10-20 JP JP2022513340A patent/JP7331248B2/ja active Active
- 2020-10-21 TW TW109136464A patent/TWI846974B/zh active
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TWI846974B (zh) | 2024-07-01 |
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CN114286848B (zh) | 2023-08-22 |
CN114286848A (zh) | 2022-04-05 |
TW202130775A (zh) | 2021-08-16 |
JP7331248B2 (ja) | 2023-08-22 |
KR20210048012A (ko) | 2021-05-03 |
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