WO2020238640A1 - 一种显示基板及其制作方法、显示装置 - Google Patents
一种显示基板及其制作方法、显示装置 Download PDFInfo
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- WO2020238640A1 WO2020238640A1 PCT/CN2020/090315 CN2020090315W WO2020238640A1 WO 2020238640 A1 WO2020238640 A1 WO 2020238640A1 CN 2020090315 W CN2020090315 W CN 2020090315W WO 2020238640 A1 WO2020238640 A1 WO 2020238640A1
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Definitions
- This application relates to the field of display technology, and in particular to a display substrate, a manufacturing method thereof, and a display device.
- TFT Thin Film Transistor
- AMOLED Active Matrix Organic Light Emitting Diode
- the embodiments of the present application provide a display substrate, a manufacturing method thereof, and a display device, which are used to solve the problem that the overlapped area between the gate line and the data line in the related art is prone to short circuit, which causes the panel yield to decrease.
- an embodiment of the present application provides a display substrate, including: a base substrate, an active layer, a gate insulating layer, a first metal film layer, an interlayer insulating layer, A second metal film layer and a passivation layer; the first metal film layer includes a pattern of gates and gate lines, and the second metal film layer includes a pattern of source drains and data lines;
- the gate line and the data line are partially disposed opposite to each other, and the surface of the opposing area of the gate line and the data line facing the data line has an oxide metal layer.
- the opposing area includes: an overlapping area of the gate line and the data line, and an area extending along the extension direction of the gate line. Two symmetrical first regions of the overlapping region.
- the width of the first region along the extending direction of the gate line is 2 ⁇ m-3 ⁇ m.
- the width of the opposing area of the gate line exceeds the width of the area adjacent thereto.
- the first metal film layer includes a first metal element
- the oxide metal layer is an oxide of the first metal element
- the first metal film layer includes a first metal film layer that is sequentially stacked on the side of the gate insulating layer away from the base substrate.
- an embodiment of the present application also provides a display device, including any one of the above-mentioned display substrates provided in the embodiment of the present application.
- an embodiment of the present application also provides a method for manufacturing any one of the foregoing display substrates, including:
- An interlayer insulating layer, a second metal film layer and a passivation layer are sequentially formed on the oxide metal layer, and the second metal film layer includes patterns of data lines and source and drain electrodes.
- forming a first metal film layer on the gate insulating layer specifically includes:
- Patterning the first metal film layer to form patterns of gates and gate lines specifically includes:
- the photoresist layer is patterned to form a photoresist pattern;
- the photoresist pattern includes a partially reserved area, a completely reserved area, and a completely removed area; wherein the partially reserved area covers the opposite area, The completely reserved area covers the area where the gate and the gate line are located, and the completely removed area covers other areas;
- wet etching is performed on the exposed first molybdenum metal layer, copper metal layer, aluminum metal layer, and second molybdenum metal layer to form the The gate and the pattern of the gate line.
- forming an oxide metal layer on the surface of the region where the gate line is opposite to the data line to be formed includes:
- the aluminum metal layer in the opposing area is oxidized by plasma containing O 2 to form an aluminum oxide layer.
- the method before the oxidation treatment of the aluminum metal layer in the opposing area by the plasma containing O 2 , the method further includes:
- the active layer exposed after dry etching is performed on the gate insulating layer is subjected to a conductive treatment.
- patterning the photoresist layer specifically includes:
- a halftone mask is used to pattern the photoresist layer; wherein, the halftone mask includes: a completely transparent area corresponding to the completely removed area, and a portion corresponding to the partially reserved area Partial light-transmitting area, and opaque area corresponding to the completely reserved area; the light transmission of the partially light-transmitting area is 75%-85% of the light transmission of the completely light-transmitting area.
- the thickness of the photoresist layer is 2.0 ⁇ m-2.2 ⁇ m, and the photoresist pattern in the partially reserved area is The thickness is 0.3 ⁇ m-0.5 ⁇ m.
- performing dry etching on the gate insulating layer specifically includes:
- a combined gas of O 2 and CF 4 is used to perform dry etching treatment on the gate insulating layer, the flow of O 2 is 1000 sccm to 1500 sccm, and the flow of CF 4 is 2000 sccm to 2500 sccm.
- FIG. 1 is a schematic diagram of the structure of a display substrate provided in the related art
- FIG. 2 is a schematic diagram of the structure of a display substrate provided by an embodiment of the application.
- FIG. 3 is a schematic top view of a partial film layer of the display substrate shown in FIG. 2;
- FIG. 7 is the fourth flow chart of the manufacturing method of the display substrate provided by the embodiment of the application.
- 8A to 8N are schematic cross-sectional views of the manufacturing method of the display substrate provided by the embodiments of the application after each step is performed.
- each layer of the film in the drawings do not reflect the true ratio of the display substrate, and the purpose is only to illustrate the content of the application.
- the TFT with the top gate structure has a higher on-state current, higher aperture ratio and better TFT stability than the TFT with the bottom gate structure and has attracted attention.
- a display substrate of a TFT with a top-gate structure in the related art includes a base substrate 1, and a light-shielding metal layer 2, a buffer layer 3, an active layer 4, and a gate which are sequentially arranged on the base substrate 1.
- the gate metal layer 6 includes a gate 61 and a gate line 62
- the source-drain metal layer 8 includes a source 81, a drain 82 and a data line 83.
- the source 81 and the drain 82 are electrically connected to the active layer 4 through via holes penetrating the interlayer insulating layer 7 respectively.
- the gate metal layer 6 and the source/drain metal layer 8 both use copper, and the thickness of the gate metal layer 6 using copper can reach more than 400 nm, and the source/drain metal layer 8 The thickness of copper used can reach more than 500nm.
- the edge of the gate line 62 is steep due to the angle ⁇ , and the deposited interlayer insulating layer 7 will become thinner at the edge of the gate line 62 and cannot completely stop the gate line 62. It is short-circuited with the data line 83.
- copper has thermal diffusivity for the interlayer insulating layer 7 (SiO material) during high-temperature deposition or etching processes.
- FIG. 2 is a schematic cross-sectional structure diagram of the display substrate
- FIG. 3 is a partial film layer in FIG. A schematic plan view of the structure.
- the display substrate includes: a base substrate 1, an active layer 4, a gate insulating layer 5, a gate 61, an interlayer insulating layer 7, a source and drain (source and drain) which are sequentially stacked on the base substrate 1.
- the gate line 62 and the data line 83 are partially disposed opposite to each other, and the surface of the opposing area of the gate line 62 and the data line 83 facing the data line 83 has an oxide metal layer 10.
- an oxide metal layer is provided on the surface of the gate line that has an area opposite to the data line. Due to the high dielectric constant and breakdown voltage of the oxide metal layer, the gate can be greatly reduced. The possibility of a short circuit between the line and the data line in the overlapping area. Therefore, the use of the display substrate provided by the embodiments of the present application can solve the problem that the overlap area between the gate line and the data line in the related art is prone to short circuit, which causes the panel yield to decrease.
- the display substrate may further include a light-shielding metal layer 2 and a buffer layer 3 located between the base substrate 1 and the active layer 4.
- the opposing area includes: the overlapping area of the gate line 62 and the data line 83 (shown in the black dotted frame in FIG. ), and two symmetrical first regions A extending beyond the overlapping region along the extending direction of the gate line 62. That is, the oxide metal layer 10 covers the overlap area of the gate line 62 and the data line 83 (shown in the black dashed frame in FIG. 3), and covers two symmetrical first areas A extending beyond the overlap area along the extending direction of the gate line 62 .
- the width of the first area A along the extending direction of the gate line 62 is 2 ⁇ m-3 ⁇ m.
- the line is perpendicular to In the direction of the gate line 62, the width of the opposing area of the gate line 62 exceeds the width of the area adjacent thereto.
- setting the size of the oxide metal layer 10 to be larger than the overlapping area of the gate line 62 and the data line 83 can prevent the coverage of aluminum oxide from shifting the overlapping area due to the production process.
- the first metal film layer includes a first metal element
- the oxide metal layer is an oxide of the first metal element. That is, the oxide metal layer may be a metal oxide layer formed by oxidizing the first metal element in the first metal film layer.
- the first metal film layer includes a layer disposed on the side of the gate insulating layer 7 facing away from the base substrate 1.
- the first molybdenum metal layer, the copper metal layer, the aluminum metal layer, and the second molybdenum metal layer, that is, the gate 61 in the embodiment of the present application is composed of the first molybdenum metal layer, the copper metal layer, the aluminum metal layer and the second molybdenum metal layer.
- the molybdenum metal layer is composed; the opposite area includes a first molybdenum metal layer and a copper metal layer; the oxide metal layer 10 is an aluminum oxide layer formed after the aluminum metal layer is oxidized, that is, the first metal element in the first metal film layer is aluminum element . Due to the high dielectric constant and breakdown voltage of aluminum oxide, it can greatly reduce the possibility of a short circuit between the gate line and the data line in the overlapping area.
- the opposite area of the gate may be a first molybdenum metal layer and a copper metal layer that are stacked. Layer and part of the aluminum metal layer, or only the first molybdenum metal layer and the copper metal layer remain.
- the display substrate has a TFT area B, a capacitor area C, and an overlapping area of the gate line 62 and the data line 83. D.
- the display substrate provided in the embodiments of the present application can be applied to a liquid crystal display panel (Liquid Crystal Display, LCD) and an organic light emitting diode (Organic Light Emitting Diode, OLED) display panel.
- LCD Liquid Crystal Display
- OLED Organic Light Emitting Diode
- the display substrate When the display substrate is applied to a liquid crystal display panel, the display substrate may also include a pixel electrode electrically connected to the drain of the TFT; further, it may also include a common electrode.
- the display substrate When the display substrate is applied to an OLED display panel, the display substrate may further include an anode, a cathode, and an organic functional layer located between the anode and the cathode, which are electrically connected to the drain of the TFT.
- an embodiment of the present application also provides a manufacturing method of a display substrate, as shown in FIG. 4, including:
- S401 sequentially forming a stacked active layer and a gate insulating layer on a base substrate;
- the manufacturing method of the display substrate provided by the embodiments of the present application is to form an oxide metal layer on the surface of the gate line that has an area opposite to the data line. Due to the high dielectric constant and breakdown voltage of the oxide metal layer, it can be greatly improved. , To reduce the possibility of short-circuiting of gate lines and data lines in the overlapping area. Therefore, the display substrate manufactured by the manufacturing method provided by the embodiment of the present application can solve the problem that the overlapped area between the gate line and the data line in the related art is prone to short circuit, which causes the panel yield to decrease.
- forming the first metal film layer on the gate insulating layer may specifically include:
- a first molybdenum metal layer, a copper metal layer, an aluminum metal layer, and a second molybdenum metal layer are sequentially deposited on the gate insulating layer.
- patterning the first metal film layer to form patterns of gates and gate lines may specifically include:
- the photoresist layer includes a partially reserved area, a completely reserved area, and a completely removed area; wherein the partially reserved area covers the opposite area, and the photoresist completely reserved area Cover the area where the gate and gate line are located, and completely remove the area to cover other areas;
- an oxide metal layer is formed on the surface of the region opposite to the gate line and the data line to be formed.
- patterning the photoresist layer specifically includes:
- a halftone mask is used to pattern the photoresist layer; the halftone mask includes: a completely transparent area corresponding to a completely removed area, a partial transparent area corresponding to a partially reserved area, and a complete The opaque area corresponding to the reserved area; the light transmission of the partially light transmission area is 75%-85% of the light transmission of the complete light transmission area.
- the thickness of the photoresist layer may be 2.0 ⁇ m-2.2 ⁇ m, and the thickness of the photoresist pattern in the partially reserved area may be 0.3 ⁇ m-0.5 ⁇ m.
- performing dry etching on the gate insulating layer may specifically include:
- a combined gas of O 2 and CF 4 is used to perform dry etching on the gate insulating layer, the flow of O 2 is 1000 sccm to 1500 sccm, and the flow of CF 4 is 2000 sccm to 2500 sccm.
- a light-shielding metal film can be deposited on the base substrate 1 by chemical vapor deposition.
- the light-shielding metal film can be a metal such as molybdenum or molybdenum-niobium alloy, and the thickness can be 0.10 ⁇ m ⁇ 0.15 ⁇ m, followed by exposure and development After the wet etching, the light-shielding metal layer 2 is formed, as shown in FIG. 8A; specifically, the wet-etching light-shielding metal film can be etched by mixed acid.
- a buffer layer 3 can be deposited on the base substrate 1 by chemical vapor deposition or magnetron sputtering, as shown in FIG. 8B; specifically, the material of the buffer layer 3 can be silicon oxide with a thickness It can be 0.3 ⁇ m to 0.5 ⁇ m.
- a metal oxide semiconductor film can be deposited on the buffer layer 3 by chemical vapor deposition, and then a patterning process is performed on the metal oxide semiconductor film to form the active layer 4, as shown in FIG. 8C, that is, the photoresist is coated After coating, the photoresist is exposed, developed, and etched with a common mask to form the active layer 4.
- the material of the active layer 4 may be indium tin oxide (IGZO), and the thickness may be 0.05 ⁇ m to 0.1 ⁇ m.
- a layer of gate insulating film 01 can be deposited on the base substrate 1 by chemical vapor deposition or magnetron sputtering, as shown in FIG. 8D; specifically, the material of the gate insulating film 01 can be Silicon oxide has a thickness of 0.1 ⁇ m to 0.2 ⁇ m.
- a first metal film layer can be deposited on the base substrate 1 by using magnetron sputtering. Specifically, a first molybdenum metal layer 001 and a copper metal layer can be sequentially deposited on the gate insulating film 01. 002, the first metal film layer formed by the aluminum metal layer 003 and the second molybdenum metal layer 004, as shown in FIG.
- the thickness of the first molybdenum metal layer 001 may be 0.03 ⁇ m to 0.04 ⁇ m, and the copper metal layer 002
- the thickness of the aluminum metal layer 003 may be 0.4 ⁇ m ⁇ 0.5 ⁇ m
- the thickness of the aluminum metal layer 003 may be 0.06 ⁇ m ⁇ 0.08 ⁇ m
- the thickness of the second molybdenum metal layer 004 may be 0.05 ⁇ m.
- a photoresist layer is formed on the second molybdenum metal layer 004, and then a halftone mask is used to expose, develop and etch the photoresist layer to form a photoresist pattern, as shown in FIG. 8F; Ground, the photoresist pattern includes a partially reserved area 021, a completely reserved area 022, and a completely removed area; wherein the partially reserved area 021 covers the opposite area (the opposite area of the gate line 62 to be formed), and the completely reserved area 022 covers the gate 61 The area where the grid line 62 is located except for the opposite area is completely removed to cover other areas.
- the photoresist layer is a positive photoresist, and its thickness may be 2.0 ⁇ m to 2.2 ⁇ m, and the thickness of the photoresist in the partially reserved region 021 may be 0.3 ⁇ m to 0.5 ⁇ m.
- wet etching is performed on the exposed first molybdenum metal layer 001, copper metal layer 002, aluminum metal layer 003, and second molybdenum metal layer 004,
- the patterns of the gate 61 and the gate line 62 are formed as shown in FIG. 8G; specifically, the wet etching of the above four metal layers can be etched with mixed acids, such as nitric acid, acetic acid and phosphoric acid in a certain proportion.
- the gate mask ie, the photoresist pattern 022
- the gate insulating layer 5 is subjected to dry etching. Since the active layer 4 includes a channel region covered by the gate insulating layer 5 and a source contact region and a drain contact region located on both sides of the channel region, the source contact region and the drain contact region are electrically conductive.
- the chemical treatment can reduce the contact resistance of the source 81, the drain 82 and the active layer 4 to be formed (as shown in FIG. 8M) and improve the conductivity.
- ammonia gas (NH 3 ) or helium gas (He) can be used for the conduction treatment.
- An interlayer insulating layer 7 is formed on the oxide metal layer 10, as shown in FIG. 8L.
- the material of the interlayer insulating layer 7 may be silicon oxide, and the thickness may be 0.45 ⁇ m to 0.6 ⁇ m.
- a second metal film layer is deposited on the interlayer insulating layer 7, and the source 81, the drain 82 and the data line 83 are formed through a patterning process, such as Shown in Figure 8M.
- a layer of metal copper is deposited, the thickness can be 0.5 ⁇ m to 0.6 ⁇ m, and then a photolithography mask is performed.
- the thickness of the source and drain mask photoresist can be 1.5 ⁇ m to 1.8 ⁇ m, and the photoresist used is positive Use this mask to perform data line wet etching. Copper wet etching can be performed with hydrogen peroxide (H 2 O 2 ) solution. After the wet etching is completed, the photoresist is stripped. After the photoresist stripping is completed, the data line 83 The line width should be 10 ⁇ m or less.
- a passivation layer 9 is deposited, as shown in Figure 8N.
- the material of the passivation layer 9 may be silicon oxide, and the thickness may be 0.3 ⁇ m to 0.5 ⁇ m.
- an aluminum oxide layer can be formed in the opposite area of the gate line 62 and the data line 83, that is, the intersection area. Because the dielectric constant and breakdown voltage of aluminum oxide are higher, it is extremely The possibility of short circuit between the gate line 62 and the data line 83 is greatly reduced.
- the preparation process of the display substrate provided by the embodiments of the present application may also include the steps of forming other patterns, such as For the step of forming the pattern of the capacitor region C in the display substrate (refer to FIG. 2), please refer to the description of the structure of the display substrate for details, which will not be repeated here.
- an embodiment of the present application also provides a display device, including the above-mentioned display substrate provided by the embodiment of the present application.
- the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
- a display device reference may be made to the above-mentioned embodiment of the display substrate, and the repetition will not be repeated.
- the display substrate, the manufacturing method thereof, and the display device provided by the embodiments of the present application include: a base substrate, a light-shielding metal layer, a buffer layer, an active layer, a gate insulating layer, The gate, the interlayer insulating layer, the source and drain, and the passivation layer; the first metal film layer where the gate is located also includes a gate line, and the second metal film layer where the source and drain are located also includes a data line; the gate line is in contact with the data
- the surface of the line opposing area has an oxide metal layer.
- an oxide metal layer is provided on the surface of the gate line that has an area opposite to the data line.
- the overlap between the gate line and the data line can be greatly reduced.
- the possibility of a short circuit in the area Therefore, the use of the display substrate provided by the embodiments of the present application can solve the problem that the overlap area between the gate line and the data line in the related art is prone to short circuit, which causes the panel yield to decrease.
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Abstract
Description
Claims (14)
- 一种显示基板,其中,包括:衬底基板,位于所述衬底基板上依次层叠设置的有源层、栅极绝缘层、第一金属膜层、层间绝缘层、第二金属膜层和钝化层;所述第一金属膜层包括栅极和栅线的图案,所述第二金属膜层包括源漏极和数据线的图案;所述栅线与所述数据线部分相对设置,所述栅线与所述数据线的相对区域朝向所述数据线一侧的表面具有氧化物金属层。
- 如权利要求1所述的显示基板,其中,所述相对区域包括:所述栅线和所述数据线的交叠区域,以及沿所述栅线延伸方向超出所述交叠区域的两个对称的第一区域。
- 如权利要求2所述的显示基板,其中,所述第一区域沿所述栅线延伸方向的宽度为2μm-3μm。
- 如权利要求2所述的显示基板,其中,沿垂直于所述栅线的方向,所述栅线的相对区域的宽度超出与其相邻的区域的宽度。
- 如权利要求1所述的显示基板,其中,所述第一金属膜层包括第一金属元素,所述氧化物金属层为所述第一金属元素的氧化物。
- 如权利要求5所述的显示基板,其中,所述第一金属膜层包括位于所述栅极绝缘层背向所述衬底基板一侧依次层叠设置的第一钼金属层、铜金属层、铝金属层和第二钼金属层,所述相对区域包括所述第一钼金属层和所述铜金属层,所述氧化物金属层为所述铝金属层经过氧化后形成的氧化铝层。
- 一种显示装置,其中,包括如权利要求1-6任一项所述的显示基板。
- 一种如权利要求1-6任一项所述的显示基板的制作方法,其中,包括:在衬底基板上依次形成层叠设置的有源层和栅极绝缘层;在所述栅极绝缘层上形成第一金属膜层,对所述第一金属膜层进行构图形成栅极和栅线的图案;在所述栅线与将要形成的数据线相对区域的表面形成氧化物金属层;在所述氧化物金属层上依次形成层间绝缘层、第二金属膜层和钝化层,所述第二金属膜层包括数据线和源漏极的图案。
- 如权利要求8所述的显示基板的制作方法,其中,在所述栅极绝缘层上形成第一金属膜层,具体包括:在所述栅极绝缘层上依次沉积第一钼金属层、铜金属层、铝金属层和第二钼金属层;对所述第一金属膜层进行构图形成栅极和栅线的图案,具体包括:在所述第二钼金属层上形成光刻胶层;对所述光刻胶层进行图案化处理,形成光刻胶图案;所述光刻胶图案包括部分保留区域、完全保留区域和完全去除区域;其中,所述部分保留区域覆盖所述相对区域,所述完全保留区域覆盖所述栅极和栅线所在区域,所述完全去除区域覆盖其它区域;以所述光刻胶图案作为遮挡,对暴露出的所述第一钼金属层、所述铜金属层、所述铝金属层和所述第二钼金属层进行湿法刻蚀处理,形成所述栅极和所述栅线的图案。
- 如权利要求9所述的显示基板的制作方法,其中,在所述栅线与将要形成的数据线相对区域的表面形成氧化物金属层,具体包括:采用灰化工艺去除所述部分保留区域的光刻胶层;对所述栅极绝缘层进行干法刻蚀处理,同时刻蚀掉所述部分保留区域的第二金属钼层;采用包含O 2的等离子体对所述相对区域的铝金属层进行氧化处理,形成氧化铝层。
- 如权利要求10所述的显示基板的制作方法,其中,在采用包含O 2的等离子体对所述相对区域的铝金属层进行氧化处理之前,还包括:对所述栅极绝缘层进行干法刻蚀处理后暴露出的所述有源层进行导体化处理。
- 如权利要求9所述的显示基板的制作方法,其中,对所述光刻胶层 进行图案化处理,具体包括:采用半色调掩膜版对所述光刻胶层进行图案化处理;其中,所述半色调掩膜版包括:与所述完全去除区域对应的完全透光区域,与所述部分保留区域对应的部分透光区域,以及与所述完全保留区域对应的不透光区域;所述部分透光区域的透光量为所述完全透光区域的透光量的75%-85%。
- 如权利要求12所述的显示基板的制作方法,其中,所述光刻胶层的厚度为2.0μm-2.2μm,所述部分保留区域的光刻胶图案的厚度为0.3μm-0.5μm。
- 如权利要求10所述的显示基板的制作方法,其中,对所述栅极绝缘层进行干法刻蚀处理,具体包括:采用O 2和CF 4的组合气体对所述栅极绝缘层进行干法刻蚀处理,所述O 2的流量为1000sccm~1500sccm,CF 4的流量为2000sccm~2500sccm。
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CN110908199A (zh) * | 2019-11-15 | 2020-03-24 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示面板 |
CN111244115B (zh) * | 2020-03-09 | 2022-12-02 | 合肥鑫晟光电科技有限公司 | 一种显示用基板及其制备方法、显示装置 |
CN111710684A (zh) * | 2020-06-10 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
CN113675222B (zh) * | 2021-08-24 | 2024-05-17 | 京东方科技集团股份有限公司 | 一种tft基板、电子纸显示屏、显示设备及其制备方法 |
WO2023206071A1 (zh) * | 2022-04-26 | 2023-11-02 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
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CN1909235A (zh) * | 1991-09-25 | 2007-02-07 | 株式会社半导体能源研究所 | 薄膜晶体管的制造方法 |
US5877083A (en) * | 1994-11-01 | 1999-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
CN101887893A (zh) * | 2010-06-10 | 2010-11-17 | 深超光电(深圳)有限公司 | 一种薄膜晶体管阵列基板及其制造方法 |
CN104766802A (zh) * | 2015-03-26 | 2015-07-08 | 深圳市华星光电技术有限公司 | 液晶显示面板、阵列基板及其薄膜晶体管的制造方法 |
CN110148601A (zh) * | 2019-05-31 | 2019-08-20 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
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US20210167098A1 (en) | 2021-06-03 |
CN110148601B (zh) | 2022-12-20 |
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US11961848B2 (en) | 2024-04-16 |
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