WO2020230414A1 - キャパシタ - Google Patents

キャパシタ Download PDF

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Publication number
WO2020230414A1
WO2020230414A1 PCT/JP2020/008961 JP2020008961W WO2020230414A1 WO 2020230414 A1 WO2020230414 A1 WO 2020230414A1 JP 2020008961 W JP2020008961 W JP 2020008961W WO 2020230414 A1 WO2020230414 A1 WO 2020230414A1
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WIPO (PCT)
Prior art keywords
capacitor
convex portion
electrode
lower electrode
capacitor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2020/008961
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English (en)
French (fr)
Japanese (ja)
Inventor
弘 松原
真臣 原田
武史 香川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to CN202080035634.4A priority Critical patent/CN113841211B/zh
Priority to JP2021519273A priority patent/JP7197001B2/ja
Publication of WO2020230414A1 publication Critical patent/WO2020230414A1/ja
Priority to US17/516,774 priority patent/US12327689B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/35—Feed-through capacitors or anti-noise capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/01—Form of self-supporting electrodes

Definitions

  • This disclosure relates to capacitors.
  • MIM Metal Insulator Metal
  • the MIM capacitor is a capacitor having a parallel plate type structure in which an insulator is sandwiched between a lower electrode and an upper electrode.
  • a capacitor in which an insulating film 102, a lower electrode 103, a dielectric film 104, and an upper electrode 105 are sequentially formed on a substrate 101, and is formed on these capacitors.
  • a capacitor in which one external electrode 107a is connected to the upper electrode 105 through the protective layer 106, and another external electrode 107b formed through the protective layer 106 is connected to the lower electrode 103.
  • the edge portions 108a and 108b of the external electrodes 107a and 107b may have a convex shape, reflecting the shape of the through opening of the lower protective layer 106.
  • the edge portion of the external electrode may have a convex shape reflecting the shape of the through opening of the protective layer of the lower layer.
  • the external electrodes also have to be made smaller, which makes it difficult to ensure mountability.
  • the present disclosure includes the following aspects.
  • [1] With the board The lower electrode formed on the substrate and The dielectric film formed on the lower electrode and The upper electrode formed on the dielectric film and A protective layer having a through opening formed on the lower electrode, the dielectric film, and the upper electrode.
  • FIG. 1A is a cross-sectional view of the capacitor 1a according to the first embodiment of the present disclosure
  • FIG. 1B is a plan view
  • FIG. 2A is a cross-sectional view of the capacitor 1b according to the second embodiment of the present disclosure
  • FIG. 2B is a plan view
  • FIG. 3A is a cross-sectional view of the capacitor 1c according to the third embodiment of the present disclosure
  • FIG. 3B is a plan view.
  • FIG. 4A is a cross-sectional view of the capacitor 1d according to the fourth embodiment of the present disclosure
  • FIG. 4B is a plan view.
  • 5 (a) is a cross-sectional view of the capacitor 1e according to the fifth embodiment of the present disclosure
  • FIG. 5 (b) is a plan view.
  • FIG. 6 is a cross-sectional view of the capacitor 1f according to the sixth embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional view of the capacitor 1 g according to the seventh embodiment of the present disclosure.
  • FIG. 8 is a cross-sectional view of the capacitor 1h according to the eighth embodiment of the present disclosure.
  • 9 (a) to 9 (i) are cross-sectional views for explaining a method of manufacturing the capacitor 1a according to the first embodiment of the present disclosure.
  • FIG. 10 is a cross-sectional view showing the structure of a conventional MIM capacitor.
  • FIG. 1 (a) A cross-sectional view of the capacitor 1a of the first embodiment is shown in FIG. 1 (a), and a plan view is shown in FIG. 1 (b).
  • the capacitor 1a of the present embodiment generally includes a substrate 2, an insulating film 3 provided on the substrate 2, and the insulating film.
  • the lower electrode 4, the dielectric film 5, and the upper electrode 6 are laminated in this order to form a MIM capacitor structure, and a voltage is applied between the lower electrode 4 and the upper electrode 6. Therefore, the electric charge can be accumulated in the dielectric film 5.
  • the current on the external electrode 11a side flows in the order of the external electrode 11a, the seed layer 10a, and the upper electrode 6 (or vice versa).
  • the current on the external electrode 11b side flows in the order of the external electrode 11b-seed layer 10b-lower electrode 4 (or vice versa).
  • the convex portions 9a and 9b are provided at the central portions of the through openings 15a and 15b, respectively.
  • plane view means the case where a capacitor is viewed in a plane perpendicular to the main surface of the substrate from the external electrode side.
  • the external electrodes 11a and 11b are formed up to the outer regions of the through openings 15a and 15b, respectively. That is, the external electrodes 11a and 11b cover the convex portions 9a and 9b, fill the inside of the through openings 15a and 15b, and are also present on the protective layer 8 outside the through openings.
  • the portion on the protective layer and the portion on the convex portion of the external electrode are formed in a convex shape.
  • the outer edge portion and the central portion of the external electrodes 11a and 11b are convex, and the surface of the external electrode has an uneven shape as a whole.
  • the inner edges of the outer edges of the convexly formed outer electrodes 11a and 11b are present inside the inner walls of the through openings 15a and 15b, respectively.
  • the central portions of the convexly formed external electrodes 11a and 11b extend to regions outside the convex portions 9a and 9b, respectively. Since the capacitor of the present disclosure has many irregularities on the surface of the external electrode as compared with the conventional capacitor, the connection area becomes large at the time of solder mounting or the like. Therefore, the capacitor of the present disclosure has a large connection area and is highly mountable.
  • the capacitors of the present disclosure are easy to handle.
  • the external electrode 11a is formed in the forming region of the upper electrode 6, and the external electrodes 11a and 11b and the upper electrode 6 are formed in the forming region of the lower electrode 4.
  • the capacitor 1a as described above is manufactured as follows, for example. Although the following description and FIG. 9 focus on one capacitor element, in reality, a plurality of capacitor elements are simultaneously formed on the substrate. That is, an assembly substrate having a plurality of capacitors is manufactured, and finally each capacitor is individually separated.
  • the substrate 2 is not particularly limited, but is preferably a semiconductor substrate such as a silicon substrate or a gallium arsenide substrate, or an insulating substrate such as glass or alumina.
  • the thickness of the substrate 2 is not particularly limited, but is preferably 50 ⁇ m or more and 300 ⁇ m or less, and more preferably 80 ⁇ m or more and 200 ⁇ m or less.
  • the thickness of the substrate is not particularly limited, but is preferably 50 ⁇ m or more and 300 ⁇ m or less, and more preferably 80 ⁇ m or more and 200 ⁇ m or less.
  • an insulating film 3 is formed on the entire substrate 2 on the substrate 2 (FIG. 9A).
  • the insulating film 3 is provided on the substrate 2 so as to cover the entire substrate.
  • the insulating film 3 can be formed by, for example, a sputtering method or a CVD (chemical vapor deposition) method.
  • the thickness of the insulating film 3 is not particularly limited as long as the substrate 2 and the layer formed on the insulating film can be insulated, and is, for example, 0.05 ⁇ m or more, preferably 0.10 ⁇ m or more.
  • the thickness of the insulating film 3 is preferably 10 ⁇ m or less, more preferably 1.0 ⁇ m or less, still more preferably 0.50 ⁇ m or less, from the viewpoint of reducing the height of the capacitor 1a.
  • the material constituting the insulating film 3 is not particularly limited, but preferred examples thereof include SiO 2 , Si 3 N 4 , Al 2 O 3 , HfO 2 , Ta 2 O 5 , ZrO 2, and the like, SiO 2 , Si. 3 N 4 or Al 2 O 3 is more preferable.
  • the pattern of the lower electrode 4 is formed on the insulating film 3 (FIG. 9 (a)).
  • the lower electrode 4 is provided on the insulating film 3 in a region other than the outer edge portion of the insulating film 3. In other words, when viewed in a plan view, the lower electrode 4 is provided in a region inside the region occupied by the substrate 2 and the insulating film 3. By not forming the lower electrode to the end of the insulating film and the substrate, it is possible to prevent the lower electrode 4 from being exposed on the end face of the capacitor 1a and short-circuiting with other parts or the like.
  • the method of forming the pattern of the lower electrode 4 can be performed by, for example, a lift-off method, a plating method, sputtering, vapor deposition, photolithography, etching or the like.
  • patterning formation is performed by combining sputtering, photolithography, and etching.
  • the thickness of the lower electrode 4 is not particularly limited, but is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, and more preferably 1 ⁇ m or more and 6 ⁇ m or less.
  • the thickness of the lower electrode is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, and more preferably 1 ⁇ m or more and 6 ⁇ m or less.
  • the material constituting the lower electrode 4 is not particularly limited, but preferably Cu, Ag, Au, Al, Ni, Cr, Ti or an alloy thereof, a conductor containing these, or the like, and Cu, Ag, Au or Al are more preferred.
  • the pattern of the dielectric film 5 is formed on the lower electrode 4 (FIG. 9 (b)).
  • the dielectric film 5 is provided on the entire substrate so as to cover the lower electrode 4.
  • the dielectric film 5 does not exist in the region where the external electrode 11b and the lower electrode 4 are connected.
  • the dielectric film 5 can be formed by, for example, a sputtering method, a CVD method, or the like. Further, the method of forming the pattern of the dielectric film 5 can be performed by, for example, photolithography, etching, or the like.
  • the thickness of the dielectric film 5 is not particularly limited, but is preferably 50 nm or more and 10 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 3.0 ⁇ m or less. Dielectric strength can be enhanced by increasing the thickness of the dielectric film to 50 nm or more. By setting the thickness of the dielectric film to 10 ⁇ m or less, it is possible to suppress a decrease in the mechanical strength of the element due to the stress of the dielectric film, and it is possible to suppress deformation of the capacitor.
  • the material constituting the dielectric film 5 is not particularly limited, but preferably oxides or nitrides such as SiO 2 , Si 3 N 4 , Al 2 O 3 , HfO 2 , Ta 2 O 5 , ZrO 2 and the like. Can be mentioned.
  • the pattern of the upper electrode 6 is formed on the dielectric film 5 (FIG. 9 (c)).
  • the upper electrode 6 is provided on a part of the dielectric film 5.
  • the region where the upper electrode 6 is formed serves as a capacitance forming portion and functions as a capacitor.
  • the method of forming the pattern of the upper electrode 6 is the same as that of the lower electrode 4, for example, and can be performed by a lift-off method, a plating method, sputtering, vapor deposition, photolithography, etching, or the like.
  • patterning formation is performed by combining sputtering, photolithography, and etching.
  • the thickness of the upper electrode 6 is not particularly limited, but for the same reason as that of the lower electrode 4, 0.5 ⁇ m or more and 10 ⁇ m or less is preferable, and 1 ⁇ m or more and 6 ⁇ m or less is more preferable. Further, the thickness of the upper electrode 6 is preferably thinner than the thickness of the lower electrode 4. The length of the upper electrode 6 is preferably shorter than the length of the lower electrode 4. This is because when the thickness of the lower electrode 4 is thin, the equivalent series resistance (ESR) becomes large.
  • ESR equivalent series resistance
  • the material constituting the upper electrode 6 is not particularly limited, but preferably Cu, Ag, Au, Al, Ni, Cr, Ti or an alloy thereof, a conductor containing these, or the like, and Cu, Ag, Au or Al are more preferred.
  • the moisture-resistant film 7 is provided so as to cover the dielectric film 5 and the upper electrode 6.
  • the moisture resistant film 7 does not exist in the region where the external electrode 11a and the upper electrode 6 are connected and the region where the external electrode 11b and the lower electrode 4 are connected.
  • the moisture-resistant film 7 can be formed by, for example, a sputtering method, a CVD method, or the like. Patterning can be performed by, for example, photolithography, etching, or the like.
  • the thickness of the moisture-resistant film 7 is not particularly limited, but is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, and more preferably 1 ⁇ m or more and 3 ⁇ m or less. By setting the thickness of the moisture-resistant film 7 to 0.5 ⁇ m or more, moisture resistance can be more reliably ensured. By reducing the thickness of the moisture-resistant film 7 to 10 ⁇ m or less, it is possible to suppress a decrease in mechanical strength due to film stress, and it is possible to suppress deformation of the capacitor.
  • the material constituting the moisture-resistant film 7 is not particularly limited, but preferably, moisture-resistant materials of Si 3 N 4 and SiO 2 can be mentioned.
  • the pattern of the protective layer 8 is formed on the moisture-resistant film 7 (FIG. 9 (e)).
  • the protective layer 8 has through openings 15a and 15b for forming the external electrodes 11a and 11b, and is provided so as to cover a region other than the portion where the through openings exist. ..
  • the through opening 15a is provided on the upper electrode 6, and the through opening 15b is provided in a region where the upper electrode 6 does not exist.
  • the protective layer 8 can be formed by, for example, spin coating. Further, the method of forming the pattern of the protective layer 8 can be performed by, for example, photolithography, etching, or the like.
  • the thickness of the protective layer 8 is not particularly limited, but is preferably 1 ⁇ m or more and 20 ⁇ m or less, and more preferably 3 ⁇ m or more and 15 ⁇ m or less.
  • the thickness of the protective layer 1 ⁇ m or more By making the thickness of the protective layer 1 ⁇ m or more, the capacitance between the external electrodes 11a and 11b sandwiching the protective layer 8 and the lower electrode 4 is between the lower electrode 4 and the upper electrode 6 sandwiching the dielectric film 5. It is possible to reduce the influence of the voltage fluctuation and the frequency characteristic of the capacitance sandwiching the protective layer 8 on the entire capacitor.
  • By reducing the thickness of the protective layer 8 to 20 ⁇ m or less it becomes possible to use a protective layer material having a low viscosity, the thickness can be easily controlled, and variations in the capacitor capacity can be suppressed.
  • the material constituting the protective layer 8 is not particularly limited, but a resin material such as polyimide is preferable.
  • convex portions 9a and 9b are formed in the through openings 15a and 15b, respectively (FIG. 9 (f)).
  • the convex portions 9a and 9b are provided in the through openings 15a and 15b, respectively.
  • Each convex portion is provided in a columnar shape at the central portion of each through opening.
  • the height of the convex portion is not particularly limited, but is preferably 0.5 ⁇ m or more and 20 ⁇ m or less, and more preferably 2 ⁇ m or more and 15 ⁇ m or less.
  • the height of the convex portion is preferably 0.5 ⁇ m or more and 20 ⁇ m or less, and more preferably 2 ⁇ m or more and 15 ⁇ m or less.
  • the height of the convex portion 9a is equal to the sum of the thicknesses of the moisture-resistant film 7 and the protective layer 8 in the through opening 15a, and the height of the convex portion 9b is in the through opening 15b. It is equal to the sum of the thicknesses of the moisture-resistant film 7, the protective layer 8, and the dielectric film 5.
  • the upper surface of the protective layer 8 and the upper surface of the convex portion 9 are preferably flush with each other.
  • the upper surface of the convex portion is located above the upper surface of the protective layer.
  • the height of the convex portion may be preferably 1.1 times or more and 2.0 times or less, and more preferably 1.2 times or more and 1.5 times or less the height of the through opening.
  • the upper surface of the convex portion is located below the upper surface of the protective layer.
  • the height of the convex portion may be preferably 0.3 times or more and 0.9 times or less, and more preferably 0.5 times or more and 0.8 times or less the height of the through opening.
  • the convex portions 9a and 9b can be formed by, for example, a sputtering method, a CVD method, a spin coating method, or the like. Further, the method of forming the pattern of the convex portions 9a and 9b can be performed by, for example, photolithography, etching or the like.
  • the convex portions 9a and 9b may be formed after the protective layer 8 is formed, or the protective layer 8 may be formed after the convex portions 9a and 9b are formed first. Further, if possible, the convex portions 9a and 9b and the protective layer 8 may be formed at the same time.
  • the material constituting the convex portions 9a and 9b is not particularly limited, and examples thereof include a resin material such as polyimide, a metal material such as Cu, and an inorganic material such as SiO 2 .
  • a resin material such as polyimide
  • a metal material such as Cu
  • an inorganic material such as SiO 2 .
  • the metal material a metal having a low Young's modulus is preferable.
  • the inorganic material a moisture-resistant inorganic material is preferable, and an inorganic material having a low Young's modulus is preferable.
  • the material constituting the convex portions 9a and 9b is a resin material such as polyimide.
  • the resin material when a load is applied to the capacitor 1a, the convex portion exists in the external electrode and the MIM structure, so that the load on the MIM structure is relaxed and the impact resistance is improved.
  • the material constituting the convex portions 9a and 9b may be the same as the material constituting the protective layer 8.
  • the protective layer and the convex portion can be formed at the same time.
  • the material constituting the convex portions 9a and 9b is a metal material such as Cu.
  • a metal material By using a metal material, the contact area of the current path between the external electrode and the upper electrode can be increased, and the Q value can be further increased. Further, by using a metal material having a low Young's modulus, when a load is applied to the capacitor 1a, the convex portion exists in the external electrode and the MIM structure, so that the load on the MIM structure is relaxed and the impact resistance is reduced. Improves sex.
  • the materials constituting the convex portions 9a and 9b are the same as the materials constituting the seed layer described below.
  • the seed formation and the convex portion can be formed at the same time, and the connection between different materials is reduced, so that the contact resistance is reduced.
  • the material constituting the convex portions 9a and 9b is an inorganic material such as SiO 2 .
  • an inorganic material such as SiO 2 .
  • a moisture-resistant inorganic material it is possible to prevent corrosion of the upper electrode due to moisture.
  • an inorganic material having a low Young's modulus when a load is applied to the capacitor 1a, the convex portion exists in the external electrode and the MIM structure, so that the load on the MIM structure is relaxed and the impact resistance is reduced. Sex improves.
  • the convex portion has a square columnar shape, but the capacitor of the present disclosure is not limited to this, and may have an arbitrary shape such as a columnar shape or a triangular columnar shape.
  • a seed layer 10 is formed on the protective layer 8 and the convex portion 9 (FIG. 9 (g)).
  • the seed layer is formed so as to cover the protective layer 8 and the convex portion, and other layers exposed to the through opening.
  • the seed layer forming method can be performed by, for example, a sputtering method, electroless plating, or the like.
  • the thickness of the seed layer is not particularly limited, but is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, and more preferably 1 ⁇ m or more and 3 ⁇ m or less.
  • the thickness of the seed layer is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, and more preferably 1 ⁇ m or more and 3 ⁇ m or less.
  • the material constituting the seed layer is not particularly limited to the material, but Ti and Cu are preferable.
  • the patterns of the external electrodes 11a and 11b are formed at predetermined locations on the seed layer (FIG. 9 (h)).
  • the external electrodes 11a and 11b are formed so as to cover the through openings 15a and 15b and the convex portions 9a and 9b, respectively.
  • the outer edge of the external electrode exists on the upper surface of the protective layer 8. That is, the external electrode covers the convex portion, further covers the bottom surface and the side surface of the through opening, and extends to the upper surface of the protective layer.
  • a semi-additive method can be used as the method for forming the patterns of the external electrodes 11a and 11b.
  • the material constituting the external electrodes 11a and 11b is not particularly limited, but Cu or Al is preferable.
  • the external electrode may have a plating layer of Ni, Au or the like, and preferably has an Au plating layer on the outermost surface.
  • the materials constituting the external electrodes 11a and 11b are materials having a resistivity lower than that of the materials of the lower electrode 4 and the upper electrode 6, and may be, for example, Cu or Al.
  • the unnecessary seed layer is removed so that the external electrodes 11a and 11b are not connected to each other by the seed layer (FIG. 9 (i)).
  • the seed layer is separated into seed layers 10a and 10b located at the respective portions of the external electrodes 11a and 11b.
  • the seed layer can be removed by etching or the like.
  • a collective substrate having a plurality of capacitor elements is manufactured by the above series of steps.
  • the collective substrate is thinned to a desired element thickness by backgrinding. After that, it is individualized by any one of blade dicing, stealth dicing, plasma dicing and the like. That is, it is cut into individual capacitor sizes from the assembly board. In this way, the capacitor 1a of the present disclosure can be obtained.
  • the capacitor 1a according to the first embodiment is manufactured.
  • the thickness of the entire obtained capacitor 1a (including the substrate 2) is preferably 10 ⁇ m or more and 300 ⁇ m or less, and more preferably 20 ⁇ m or more and 200 ⁇ m or less.
  • FIG. 2A A cross-sectional view of a portion of the capacitor 1b of the second embodiment in which the MIM structure exists is shown in FIG. 2A, and a plan view is shown in FIG. 2B.
  • the capacitor 1b of the second embodiment has the same configuration as the capacitor 1a of the first embodiment except that a plurality of convex portions 9a are present.
  • a plurality of convex portions 9b may also be present.
  • the same number of convex portions are provided vertically and horizontally at equal intervals (that is, three each, for a total of nine).
  • the external electrode also has a convex shape.
  • the number and arrangement of the plurality of convex portions are not limited to the illustrated example.
  • the number of convex portions may be 2 or more, preferably 4 or more, and more preferably 9 or more.
  • the convex portion may be arranged in any shape such as a straight line or an annular shape.
  • the region occupied by the convex portion is within the region of the convex portion of the external electrode.
  • the distance between the convex portions may be preferably 1 ⁇ m or more, more preferably 5 ⁇ m or more, and further preferably 10 ⁇ m or more. By setting the distance between the convex portions to 1 ⁇ m or more, it is possible to prevent the unevenness of the surface of the external electrode from being crushed when the external electrode is formed.
  • FIG. 3A A cross-sectional view of a portion of the capacitor 1c of the third embodiment in which the MIM structure exists is shown in FIG. 3A, and a plan view is shown in FIG. 3B.
  • the capacitor 1c of the third embodiment has the first embodiment except that the convex portion 9a is formed in a loop shape in a plan view. It has the same configuration as the capacitor 1a of.
  • the convex portion 9b may also be formed in a loop shape in a plan view.
  • the convex portion is provided in a square closed shape in a plan view.
  • the external electrode also has a convex portion formed in a square closed shape in a plan view.
  • the shape and size of the loop formed by the convex portion are not limited to the illustrated example.
  • the loop may be formed in any shape such as a circle, an ellipse, and a triangle.
  • FIG. 4A A cross-sectional view of a portion of the capacitor 1d of the fourth embodiment in which the MIM structure exists is shown in FIG. 4A, and a plan view is shown in FIG. 4B.
  • the capacitor 1d of the fourth embodiment has a plurality of convex portions 9a, and the plurality of convex portions are the through openings in a plan view. It has the same configuration as the capacitor 1a of the first embodiment, except that it is provided on the outer peripheral portion. Although not shown, a plurality of convex portions 9b may also be present on the outer peripheral portion of the through opening portion, similarly to the convex portions 9a. Such an embodiment is the same as the embodiment in which the plurality of convex portions of the second embodiment are provided on the outer peripheral portion of the through opening in a plan view.
  • the convex portion 9a and 9b By providing a plurality of convex portions 9a and 9b, the number of irregularities on the surface of the external electrodes 11a and 11b increases, and the surface area of the external electrodes increases, so that the mountability is further improved. Further, since the convex portion is arranged on the outer peripheral portion of the through opening, the external electrode formed above the convex portion also has a convex portion on the outer peripheral portion, and the central portion thereof is flat. Become. This facilitates probing.
  • FIG. 5A A cross-sectional view of a portion of the capacitor 1e of the fifth embodiment in which the MIM structure exists is shown in FIG. 5A, and a plan view is shown in FIG. 5B.
  • the convex portion 9a is provided on the outer peripheral portion of the through opening in a loop shape in a plan view.
  • the convex portion 9b may also be formed on the outer peripheral portion of the through opening in a loop shape in a plan view.
  • Such an embodiment is the same as the embodiment in which the loop-shaped convex portion of the third embodiment is provided on the outer peripheral portion of the through opening in a plan view.
  • the "outer peripheral portion of the through opening” is a region located on the most side surface side of the through opening when the through openings are viewed in a plan view and the surfaces facing each other are divided into six equal parts, or the through openings. A region in which a part of a convex portion is formed within 30 ⁇ m from the side surface of the above.
  • FIG. 6 shows a cross-sectional view of a portion of the capacitor 1f of the sixth embodiment in which the MIM structure exists.
  • the capacitor 1f of the sixth embodiment has the fourth embodiment or the fourth embodiment except that the moisture-resistant film 17a is provided between the convex portion 9a and the upper electrode 6. It has the same configuration as the capacitor of the form.
  • a moisture resistant film 17b may be similarly provided between the convex portion 9b and the lower electrode 4.
  • the moisture-resistant films 17a and 17b may be formed at the same time as the moisture-resistant film 7, or may be formed separately.
  • the materials constituting the moisture-resistant films 17a and 17b are the same as those listed as the materials constituting the moisture-resistant film 7.
  • the moisture-resistant films 17a and 17b and the moisture-resistant film 7 may be the same material or different materials, but are preferably the same material.
  • FIG. 7 shows a cross-sectional view of a portion of the capacitor 1 g of the seventh embodiment in which the MIM structure exists.
  • the capacitor 1g of the seventh embodiment has the same configuration as the capacitor of the sixth embodiment except that the moisture resistant film 17a is changed to the metal film 18a.
  • a metal film 18b may be similarly provided between the convex portion 9b and the lower electrode 4.
  • the metal films 18a and 18b are preferably in contact with the seed layers 10a and 10b, respectively, and are electrically connected to each other.
  • the metal films 18a and 18b may be formed at the same time as the seed layer, or may be formed separately. Further, the materials constituting the metal films 18a and 18b may be the same as those mentioned as the materials constituting the lower electrode or the seed layer. In a preferred embodiment, the material constituting the metal films 18a, 18b can be a metal having a low Young's modulus. By using a metal material having a low Young's modulus, when a load is applied to 1 g of the capacitor, the load on the MIM structure is relaxed and the impact resistance is improved.
  • the capacitor 1h of the eighth embodiment has the same configuration as the capacitor 1a of the first embodiment except that the convex portions 21a and 21b have a reverse taper shape.
  • the convex portions 21a and 21b have a reverse taper shape.
  • Example The capacitor shown in FIG. 4 was manufactured according to the manufacturing method shown in FIG. 9, except that the number and arrangement locations of the convex portions were adjusted to the structure shown in FIG.
  • the configuration of the manufactured capacitor is shown below.
  • Substrate Silicon substrate, 200 ⁇ m Insulating film: SiO 2 , 1 ⁇ m Lower electrode: Cu, 3 ⁇ m Dielectric film: Si 3 N 4 , 3 ⁇ m Upper electrode: Cu, 3 ⁇ m Moisture resistant film: SiO 2 , 2 ⁇ m
  • Protective layer Polyimide convex part: Polyimide seed layer: Cu, 1 ⁇ m External electrode: Ni, Au plating
  • Comparative Example As a comparative example, a capacitor was manufactured in the same manner as in the examples except that the convex portion was not formed. The capacitor of the comparative example did not have unevenness due to the convex portion on the surface of the external electrode.
  • Test Example The failure rate when the capacitors of the Examples and Comparative Examples obtained above were mounted on a substrate by reflow processing was investigated. Specifically, the capacitance was measured after reflowing the capacitor with a mounter, and the capacitor deviating from the reference value was counted as a failure. The results are shown in the table below.
  • capacitors of the present disclosure are highly mountable, they are suitably used in various electronic devices.

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
PCT/JP2020/008961 2019-05-13 2020-03-03 キャパシタ Ceased WO2020230414A1 (ja)

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US17/516,774 US12327689B2 (en) 2019-05-13 2021-11-02 Capacitor having a through-hole exposing an electrode and at least one protrusion in the through-hole

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US20220059290A1 (en) 2022-02-24

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