WO2020194613A1 - 半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート - Google Patents

半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート Download PDF

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Publication number
WO2020194613A1
WO2020194613A1 PCT/JP2019/013409 JP2019013409W WO2020194613A1 WO 2020194613 A1 WO2020194613 A1 WO 2020194613A1 JP 2019013409 W JP2019013409 W JP 2019013409W WO 2020194613 A1 WO2020194613 A1 WO 2020194613A1
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Prior art keywords
die bonding
bonding film
adhesive layer
die
film
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PCT/JP2019/013409
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English (en)
French (fr)
Japanese (ja)
Inventor
麻未 上田
紘平 谷口
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日立化成株式会社
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Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to PCT/JP2019/013409 priority Critical patent/WO2020194613A1/ja
Priority to KR1020217031373A priority patent/KR20210144731A/ko
Priority to PCT/JP2020/011256 priority patent/WO2020195981A1/ja
Priority to SG11202109887Q priority patent/SG11202109887QA/en
Priority to JP2021509063A priority patent/JPWO2020195981A1/ja
Priority to CN202080022034.4A priority patent/CN113646871A/zh
Priority to TW109109822A priority patent/TW202105489A/zh
Publication of WO2020194613A1 publication Critical patent/WO2020194613A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device, a die bonding film, and a dicing / die bonding integrated adhesive sheet.
  • the semiconductor wafer back surface sticking method is a method in which a die bonding film and a dicing tape are stuck on the back surface of the semiconductor wafer, and then the semiconductor wafer, the die bonding film, and a part of the dicing tape are cut in a dicing step.
  • a method of attaching a die bonding film on a dicing tape and attaching the die bonding film to a semiconductor wafer has been proposed (see, for example, Patent Documents 1 to 4).
  • the number of stacked chips in a package has been increasing for the purpose of increasing the storage capacity per package.
  • a semiconductor wafer having a thickness of 30 ⁇ m or less is manufactured. If the semiconductor wafer is made thin, the semiconductor wafer is liable to crack in the dicing process, which may significantly reduce the manufacturing efficiency.
  • a modified layer is formed by irradiating the inside of the semiconductor wafer on the planned cutting line with a laser beam, and then the outer peripheral portion is expanded to individualize the semiconductor wafer.
  • a method of clearing is known (see, for example, Patent Document 5). Stealth dicing is expected to improve manufacturing efficiency because it has the effect of reducing defects such as chipping even when the thickness of the semiconductor wafer is relatively thin.
  • the dicing film in the dicing / die bonding integrated adhesive sheet is usually flexible and has elasticity, there is a problem that the dicing film is difficult to be divided when the base film is expanded.
  • One aspect of the present invention is a dying / die bonding integrated adhesive sheet including an adhesive layer made of a die bonding film having a breaking elongation at ⁇ 15 ° C. of 5% or less, an adhesive layer, and a base film in this order.
  • a method for manufacturing a semiconductor device which comprises a step of adhering a layered semiconductor chip to a support substrate for mounting a semiconductor chip via an adhesive layer.
  • the die bonding film may have a die shear strength of 0.7 MPa or more at 250 ° C. in a cured product of the die bonding film after the die bonding film is thermocompression bonded to a wiring board and cured at 170 ° C. for 3 hours.
  • the die bonding film may contain an epoxy resin, an epoxy resin curing agent, an epoxy group-containing (meth) acrylic copolymer, an inorganic filler, and a silane coupling agent.
  • the silane coupling agent may be a silane coupling agent represented by the following general formula (1).
  • R is an alkoxy group and n is an integer of 1 to 3.
  • the content of the inorganic filler may be 25% by mass or more based on the total amount of the die bonding film.
  • the content of the epoxy group-containing (meth) acrylic copolymer may be 60% by mass or less based on the total amount of the die bonding film.
  • the average particle size of the inorganic filler may be 0.1 to 1.0 ⁇ m.
  • the inorganic filler may be spherical.
  • the present invention provides a die bonding film for adhering a semiconductor chip and a support member on which the semiconductor chip is mounted, which has a breaking elongation at ⁇ 15 ° C. of 5% or less. To do.
  • the present invention provides a dicing / die bonding integrated adhesive sheet including the adhesive layer made of the above-mentioned die bonding film, the adhesive layer, and the base film in this order.
  • a die bonding film having excellent splittability and a method for manufacturing a semiconductor device using the same is also excellent in terms of die shear strength and embedding property. Further, according to the present invention, a dicing / die bonding integrated adhesive sheet using such a die bonding film is provided.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • FIG. 2 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device, and FIGS. 2 (a), (b), (c), (d), and (e) are steps. It is a schematic cross-sectional view which shows.
  • FIG. 3 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device, and FIGS. 3 (f), (g), (h), and (i) are schematic cross-sectional views showing each step. It is a figure.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated adhesive sheet.
  • the numerical range indicated by using "-" in the present specification indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • (meth) acrylate means acrylate or the corresponding methacrylate.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the semiconductor chip Wa is adhered to the semiconductor chip mounting support substrate 60 via the adhesive layer 30a (or the cured product of the adhesive layer 30a).
  • the semiconductor chip Wa is electrically connected to the semiconductor chip mounting support substrate 60 by a wire bond 70.
  • the semiconductor chip Wa is resin-sealed by the resin encapsulant 80 on the surface 60a of the semiconductor chip mounting support substrate 60.
  • Solder balls 90 may be formed on the surface of the semiconductor chip mounting support substrate 60 opposite to the surface 60a for electrical connection with the external substrate (motherboard).
  • the semiconductor chip for example, a general semiconductor chip such as an IC, LSI, or VLSI can be used.
  • the support substrate for mounting a semiconductor chip for example, a lead frame having a die pad, a ceramic substrate, an organic substrate, or the like can be used without being limited to the substrate material.
  • the ceramic substrate include an alumina substrate and an aluminum nitride substrate.
  • the organic substrate include an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a substrate, and the like. ..
  • the wiring provided on the semiconductor chip mounting support substrate may be one-sided wiring, double-sided wiring, or multi-layer wiring, and if necessary, a through hole electrically connected to the semiconductor chip mounting support substrate. Non-through holes may be provided. Further, when the wiring is arranged outside the semiconductor device, a protective resin layer may be provided.
  • the method for manufacturing a semiconductor device of one embodiment is a dicing die bonding in which an adhesive layer made of a die bonding film having a breaking elongation at ⁇ 15 ° C. of 5% or less, an adhesive layer, and a base film are provided in this order.
  • a step of preparing an integrated adhesive sheet (dicing / die bonding integrated adhesive sheet preparation step), a step of preparing a semiconductor wafer and forming a modified layer on the semiconductor wafer (a modified layer forming step), and dicing.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated adhesive sheet.
  • the dicing / die bonding integrated adhesive sheet 1 includes an adhesive layer 30, an adhesive layer 20, and a base film 10 in this order.
  • the die bonding film constituting the adhesive layer 30 is thermosetting, and can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state after the curing treatment.
  • the die bonding film has a breaking elongation of 5% or less at -15 ° C.
  • the elongation at break of the die bonding film at ⁇ 15 ° C. may be 4.5% or less, 4% or less, or 3.5% or less.
  • the elongation at break of the die bonding film at ⁇ 15 ° C. may be, for example, 0.5% or more.
  • the elongation at break at ⁇ 15 ° C. means a numerical value measured by the method described in Examples.
  • the die bonding film contains an epoxy resin (hereinafter, may be referred to as "(A) component”), an epoxy resin curing agent (hereinafter, may be referred to as “(B) component”), and an epoxy group (meth).
  • (A) component an epoxy resin
  • (B) component an epoxy resin curing agent
  • (meth) component an epoxy group (meth).
  • (C) component Acrylic copolymer
  • (D) component inorganic filler
  • silane coupling agent hereinafter, "(). It may be referred to as "E) component”).
  • Component (A) Epoxy resin
  • the component (A) is a component having a property of forming a three-dimensional bond between molecules and being cured by heating or the like, and is a component that exhibits an adhesive action after curing.
  • the component (A) can be used without particular limitation as long as it has an epoxy group in the molecule.
  • the component (A) may have two or more epoxy groups in the molecule.
  • component (A) examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol F novolac type.
  • the component (A) may be a cresol novolac type epoxy resin, a bisphenol type epoxy resin, or a dicyclopentadiene type epoxy resin from the viewpoint of film tackiness, flexibility, and the like.
  • the epoxy equivalent of the component (A) is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq.
  • the breaking elongation of the die bonding film can be adjusted to be low, and as a result, stress tends to concentrate and the die bonding film tends to be easily divided. ..
  • the content of the component (A) may be 1 to 30% by mass based on the total amount of the die bonding film.
  • the content of the component (A) may be 2% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total amount of the die bonding film, 20% by mass or less, 15% by mass or less, or 10%. It may be mass% or less.
  • the component (B) may be a phenol resin that can be a curing agent for the epoxy resin.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde and the like.
  • Phenols such as novolak-type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, and phenol obtained by condensing or co-condensing with a compound having an aldehyde group of
  • a phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, a naphthol aralkyl resin, a biphenyl aralkyl type phenol resin, a phenyl aralkyl type phenol resin and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the hydroxyl group equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq.
  • the hydroxyl group equivalent of the phenol resin is 40 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas, etc. ..
  • the ratio of the epoxy equivalent of the component (A) to the hydroxyl equivalent of the phenol resin is 0.30 / 0.70 to 0.70 from the viewpoint of curability. /0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / It may be 0.45.
  • the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the content of the component (B) may be 1 to 30% by mass based on the total amount of the die bonding film.
  • the content of the component (B) may be 2% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total amount of the die bonding film, 20% by mass or less, 15% by mass or less, or 10%. It may be mass% or less.
  • the (meth) acrylic copolymer means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
  • the epoxy group-containing (meth) acrylic copolymer is a polymer containing a structural unit derived from a (meth) acrylic acid ester having an epoxy group as a structural unit.
  • the (meth) acrylic copolymer may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylic nitrile. These may be used individually by 1 type or in combination of 2 or more type.
  • the glass transition temperature (Tg) of the component (C) may be ⁇ 50 to 50 ° C. or ⁇ 30 to 20 ° C.
  • Tg of the acrylic resin is ⁇ 50 ° C. or higher, the tackiness of the die bonding film is lowered, so that the handleability tends to be further improved.
  • Tg of the acrylic resin is 50 ° C. or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently secured.
  • the glass transition temperature (Tg) of the component (C) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Co., Ltd.).
  • the weight average molecular weight (Mw) of the component (C) may be 50,000 to 1.2 million, 100,000 to 1.2 million, or 300,000 to 900,000. When the weight average molecular weight of the component (C) is 50,000 or more, the film forming property tends to be better. When the weight average molecular weight of the component (C) is 1.2 million or less, the fluidity of the adhesive composition when forming the die bonding film tends to be more excellent.
  • the weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.
  • the measuring device, measuring conditions, etc. of the weight average molecular weight (Mw) of the component (C) are as follows.
  • the content of the component (C) may be 60% by mass or less based on the total amount of the die bonding film.
  • the content of the component (C) may be 60% by mass or less based on the total amount of the die bonding film.
  • the content of the component (C) may be 58% by mass or less or 56% by mass or less based on the total amount of the die bonding film.
  • the content of the component (C) may be 35% by mass or more, 40% by mass or more, or 45% by mass or more based on the total amount of the die bonding film.
  • Component (D) Inorganic filler
  • the component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and the like.
  • examples thereof include aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. One of these may be used alone, or two or more thereof may be used in combination. Of these, component (D) may be silica.
  • the average particle size of the component (D) may be 0.1 to 1.0 ⁇ m.
  • the average particle size of the component (D) may be 0.2 ⁇ m or more, 0.3 ⁇ m or more, or 0.4 ⁇ m or more, and may be 0.9 ⁇ m or less, 0.8 ⁇ m or less, or 0.7 ⁇ m or less.
  • the average particle size means a value obtained by converting from the BET specific surface area.
  • the shape of the component (D) may be spherical.
  • the spherical shape is a concept including a true spherical shape.
  • the component (D) may be surface-treated with a surface treatment agent from the viewpoint of compatibility between the surface and the solvent, other components and the like, and adhesive strength.
  • a surface treatment agent include a silane-based coupling agent and the like.
  • the functional group of the silane coupling agent include a vinyl group, a (meth) acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, an ethoxy group and the like.
  • the content of the component (D) may be 25% by mass or more based on the total amount of the die bonding film.
  • the content of the component (D) may be 25% by mass or more based on the total amount of the die bonding film.
  • the content of the component (D) may be 26% by mass or more or 28% by mass or more based on the total amount of the die bonding film.
  • the content of the component (D) may be 50% by mass or less, 45% by mass or less, or 40% by mass or less based on the total amount of the die bonding film.
  • Component (E) Silane coupling agent
  • the component (E) may be a silane coupling agent represented by the following general formula (1).
  • R is an alkoxy group such as a methoxy group or an ethoxy group
  • n is an integer of 1 to 3.
  • silane coupling agent represented by the general formula (1) examples include anilinopropyltrimethoxysilane, anilinopropyltriethoxysilane, anilinoethyltrimethoxysilane, anilinoethyltriethoxysilane, and anilinomethyltri. Examples thereof include methoxysilane and anilinomethyltriethoxysilane.
  • the component (E) may contain a silane coupling agent other than the silane coupling agent represented by the general formula (1).
  • a silane coupling agent include vinyltrichlorosilane, vinyltriethoxysilane, vinyltris ( ⁇ -methoxyethoxy) silane, ⁇ -methacryloxypropyltrimethoxysilane, and ⁇ - (3,4-epoxycyclohexyl) ethyl.
  • the content of the component (E) may be 0.01 to 3.0% by mass based on the total amount of the die bonding film. When the content of the component (E) is in such a range, the interfacial bond between different components tends to be further enhanced.
  • the mass ratio of the silane coupling agent represented by the general formula (1) to the total amount of the component (E) is It may be 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, or 0.85 or more.
  • the die bonding film may further contain a curing accelerator (hereinafter, may be referred to as "component (F)").
  • component (F) a curing accelerator
  • Component (F) Curing accelerator
  • the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (F) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the content of the component (F) may be 0.001 to 1% by mass based on the total amount of the die bonding film.
  • the storage stability tends to be improved while achieving both adhesiveness and shortening of the process time.
  • the die bonding film may further contain an antioxidant, a rheology control agent, a leveling agent and the like as other ingredients.
  • the content of these components may be 0.02 to 3% by mass based on the total amount of the die bonding film.
  • the die bonding film is produced by forming an adhesive composition containing the above-mentioned components (A) to (E) and, if necessary, the component (F) and other components in the form of a film. Can be done.
  • Such a die bonding film can be formed by applying an adhesive composition to a support film.
  • the adhesive composition may be used as a varnish for the adhesive composition diluted with a solvent.
  • the die bonding film can be formed by applying the varnish of the adhesive composition to the support film and removing the solvent by heating and drying.
  • the solvent is not particularly limited as long as it can dissolve components other than component (D).
  • the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like.
  • Cyclic ethers such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane from the viewpoint of solubility and boiling point.
  • the concentration of the solid component in the varnish of the adhesive composition may be 10 to 80% by mass based on the total mass of the varnish of the adhesive composition.
  • the varnish of the adhesive composition can be prepared by mixing and kneading the components (A) to (E), and if necessary, the component (F), other components, and a solvent.
  • the order of mixing and kneading each component is not particularly limited and can be set as appropriate.
  • Mixing and kneading can be carried out by appropriately combining a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, and a bead mill.
  • air bubbles in the varnish may be removed by vacuum degassing or the like.
  • the support film is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide.
  • the thickness of the support film may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • a known method can be used, for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method. And so on.
  • the conditions for heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 0.1 to 90 minutes at 50 to 200 ° C.
  • the thickness of the die bonding film can be adjusted as appropriate according to the application.
  • the thickness of the die bonding film may be 3 to 40 ⁇ m, 5 to 35 ⁇ m, or 7 to 30 ⁇ m.
  • the die bonding film may have a die shear strength at 250 ° C. of 0.7 MPa or more in the cured product of the die bonding film after the die bonding film is thermocompression bonded to a wiring board and cured at 170 ° C. for 3 hours.
  • the die shear strength at 250 ° C. may be 0.8 MPa or more, 1.0 MPa or more, or 1.2 MPa or more.
  • the upper limit of the die shear strength at 250 ° C. is not particularly limited, but may be, for example, 3 MPa or less.
  • the obtained die bonding film can be used as it is as the adhesive layer 30.
  • Adhesive layer and base film As the pressure-sensitive adhesive layer 20 and the base film 10, a laminate in which the pressure-sensitive adhesive layer 20 is provided on the base film 10, that is, a dicing tape can be used.
  • the pressure-sensitive adhesive layer 20 may be a layer that is cured by high-energy rays or heat (that is, a layer that can control the adhesive force), a layer that is cured by high-energy rays, or a layer that is cured by ultraviolet rays.
  • a pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer a pressure-sensitive adhesive generally used in the dicing tape field can be used.
  • a pressure-sensitive adhesive whose adhesive strength to the adhesive layer 30 is reduced by irradiation with high-energy rays can be appropriately selected and used.
  • the base film 10 a base film generally used in the dicing tape field can be used.
  • the base material of the base film 10 is not particularly limited as long as it can be expanded in the dicing step, and for example, crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, and ultra-low density.
  • polypropylene such as polybutene, polymethylpentene, ethylene-vinyl acetate copolymer,
  • the base material of the base film 10 is polypropylene, polyethylene-polypropylene random copolymer, polyethylene-polypropylene block copolymer, ethylene-vinyl acetate from the viewpoint of characteristics such as young ratio, stress relaxation property, and melting point. It may be a copolymer, an ionomer resin, or an ethylene- (meth) acrylic acid copolymer.
  • a dicing / die bonding integrated adhesive sheet 1 including the adhesive layer 30, the adhesive layer 20, and the base film 10 in this order is obtained. be able to.
  • a semiconductor wafer W1 having a thickness H1 is prepared.
  • the thickness H1 of the semiconductor wafer W1 forming the modified layer may exceed 35 ⁇ m.
  • the protective film 2 is attached on one main surface of the semiconductor wafer W1 (see FIG. 2A).
  • the surface on which the protective film 2 is attached may be the circuit surface of the semiconductor wafer W1.
  • the protective film 2 may be a back grind tape used for back grinding (back grind) of a semiconductor wafer.
  • the modified layer 4 is formed by irradiating the inside of the semiconductor wafer W1 with laser light (see FIG. 2B), and the side opposite to the surface to which the protective film 2 of the semiconductor wafer W1 is attached (back surface side).
  • a semiconductor wafer W2 having the modified layer 4 is produced by performing back grinding (back surface grinding) and polishing (polishing) on the surface (see FIG. 2C).
  • the thickness H2 of the obtained semiconductor wafer W2 may be 35 ⁇ m or less.
  • the adhesive layer 30 of the dicing / die bonding integrated adhesive sheet 1 is placed in a predetermined device. Subsequently, the dicing / die bonding integrated adhesive sheet 1 is attached to the main surface Ws of the semiconductor wafer W2 via the adhesive layer 30 (see FIG. 2D), and the protective film 2 of the semiconductor wafer W2 is peeled off. (See FIG. 2 (e)).
  • the semiconductor wafer W2 is divided by the modified layer 4 by expanding the base film 10.
  • the semiconductor wafer W2 and the adhesive layer 30 are separated into individual pieces to produce a semiconductor chip with an adhesive layer (see FIG. 3 (f)).
  • the condition for expanding the base film 10 may be a cooling condition of 0 ° C. or lower.
  • the pressure-sensitive adhesive layer 20 may be irradiated with ultraviolet rays, if necessary (see FIG. 3 (g)).
  • the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 20 is cured by ultraviolet rays, the pressure-sensitive adhesive layer 20 is cured, and the adhesive force between the pressure-sensitive adhesive layer 20 and the adhesive layer 30 can be reduced.
  • ultraviolet rays having a wavelength of 200 to 400 nm may be used.
  • the ultraviolet irradiation conditions may be adjusted so that the illuminance is 30 to 240 mW / cm 2 and the irradiation amount is 200 to 500 mJ.
  • the semiconductor chip 50 with an adhesive layer has a semiconductor chip Wa and an adhesive layer 30a.
  • the semiconductor chip Wa is a semiconductor wafer W2 divided by dicing
  • the adhesive layer 30a is an adhesive layer 30 divided by dicing.
  • the cured product 20ac of the pressure-sensitive adhesive layer is a cured product of the pressure-sensitive adhesive layer divided by dicing.
  • the cured product 20ac of the adhesive layer may remain on the base film 10 when the semiconductor chip 50 with the adhesive layer is picked up. In the pick-up process, it is not always necessary to expand, but the pick-up property can be further improved by expanding.
  • the semiconductor chip 50 with an adhesive layer is bonded to the semiconductor chip mounting support substrate 60 via the adhesive layer 30a by thermocompression bonding (FIG. 3 (i)). reference).
  • a plurality of semiconductor chips 50 with adhesive layers may be adhered to the support substrate 60 for mounting the semiconductor chip.
  • the adhesive layer 30a may be cured by heating at, for example, 120 to 150 ° C. for 0.5 to 6 hours.
  • the semiconductor device shown in FIG. 1 includes the above steps, a step of electrically connecting the semiconductor chip Wa and the semiconductor chip mounting support substrate 60 by a wire bond 70, and a surface 60a of the semiconductor chip mounting support substrate 60. It can be manufactured by a manufacturing method further including a step of sealing the semiconductor chip Wa with a resin using the resin sealing material 80.
  • the die bonding film of one embodiment is for adhering a semiconductor chip and a support member on which the semiconductor chip is mounted, and has a breaking elongation at ⁇ 15 ° C. of 5% or less.
  • the components contained in the die bonding film are the same as the components exemplified in the above-mentioned adhesive layer.
  • the dicing / die bonding integrated adhesive sheet of one embodiment includes an adhesive layer made of the above-mentioned die bonding film, an adhesive layer, and a base film in this order.
  • a varnish of the adhesive composition was prepared by the following procedure.
  • the types and contents (solid content) of each component are as shown in Table 1.
  • (A) epoxy resin, (B) epoxy resin curing agent, (D) inorganic filler, and (E) silane coupling agent were blended, cyclohexanone was added thereto, and the mixture was stirred.
  • (C) an epoxy group-containing (meth) acrylic copolymer and (F) a curing accelerator were added and vacuum degassed to obtain a varnish of an adhesive composition.
  • Component (C): Epoxide group-containing (meth) acrylic copolymer (C1) Acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name "HTR-860P-3", weight average molecular weight 800,000, glass transition point: -13 ° C., Butyl acrylate: Ethyl acrylate: Acrylonitrile: Glycidyl methacrylate 39.4: 29.3: 30.3: 3.0 (mass ratio))
  • D1 Silica filler (manufactured by Admatex Co., Ltd., trade name "SC2050”, average particle size 0.5 ⁇ m, spherical silica including spherical silica)
  • D2 Silica filler (manufactured by Admatex Co., Ltd., trade name "YA050”, average particle size 0.05 ⁇ m, spherical silica including spherical silica)
  • the varnish of the obtained adhesive composition was applied onto a support film, a polyethylene terephthalate (PET) film having a thickness of 38 ⁇ m and undergoing a mold release treatment.
  • the applied varnish was heated and dried at 90 ° C. for 5 minutes and at 130 ° C. for 5 minutes. In this way, die bonding films of Examples 1 to 3 and Comparative Examples 1 and 2 having the thickness shown in Table 1 in a semi-cured (B stage) state were obtained on the support film.
  • a semiconductor wafer having a thickness of 50 ⁇ m and a diameter of 300 mm was prepared.
  • a stealth dicing laser saw manufactured by Disco Corporation, device name "DFL7361”
  • a modified layer was formed on the semiconductor wafer so as to obtain a semiconductor chip having a size of 4 mm ⁇ 12 mm.
  • backgrinding was performed using a backgrinding device (manufactured by Disco Corporation, device name "DGP8761”), and the thickness of the semiconductor wafer was adjusted to 25 ⁇ m.
  • the support film of the dicing / die bonding integrated adhesive sheet of Examples 1 to 3 and Comparative Examples 1 and 2 was peeled off, and the adhesive layer of the dicing / die bonding integrated adhesive sheet was applied to the semiconductor wafer whose thickness was adjusted to 25 ⁇ m.
  • the dicing film) was laminated and attached at 70 ° C. using a laminating device (manufactured by Disco Corporation, device name “DFM2800”).
  • the semiconductor wafer to which the dicing / die bonding integrated adhesive sheet is attached is fixed, and the dicing tape is expanded at -15 ° C using an expanding device (manufactured by DISCO Co., Ltd., device name "DDS2300”), and the adhesive is used.
  • the layer and the semiconductor wafer were separated into a semiconductor chip with an adhesive layer of 4 mm ⁇ 12 mm.
  • the expanding conditions were adjusted so that the expanding speed was 100 mm / sec and the expanding amount was 8 mm.
  • the ratio of both the adhesive layer and the semiconductor wafer being cut at the same time was 90% or more, it was evaluated as "A” as good breakability, and 90%. If it was less than, it was evaluated as "B” as poor splittability.
  • Table 1 The results are shown in Table 1.
  • the die shear strength of the dicing / die bonding film was measured using the dicing / die bonding integrated adhesive sheet of Examples 1 to 3 which was excellent in breakability.
  • the semiconductor chip for measuring the die shear strength was produced as follows. A semiconductor wafer having a thickness of 400 ⁇ m was prepared, and the dicing film side of the dicing / die bonding integrated adhesive sheet of Examples 1 to 3 was laminated on the semiconductor wafer at a stage temperature of 70 ° C. to prepare a dicing sample. The obtained dicing sample was cut using a fully automatic dicing DFD-6361 (manufactured by Disco Corporation).
  • the cutting was performed by a step cutting method using two blades, and dicing blades ZH05-SD2000-N1-70-FF and ZH05-SD4000-N1-70-EE (both manufactured by DISCO Corporation) were used.
  • the cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm / sec, and a chip size of 5 mm ⁇ 5 mm.
  • the first step was cut so that the semiconductor wafer remained about 200 ⁇ m, and the second step was cut so that the dicing tape had a notch of about 20 ⁇ m.
  • the pressure-sensitive adhesive layer made of the ultraviolet-curable pressure-sensitive adhesive was irradiated with ultraviolet rays to cure the pressure-sensitive adhesive layer.
  • the semiconductor chip to be picked up was picked up using the pick-up collet. In the pickup, it was pushed up using a total of five pins, one in the center and four in the four corners.
  • the push-up speed was set to 20 mm / sec, and the push-up height was set to 450 ⁇ m.
  • the semiconductor chips with the die bonding films of Examples 1 to 3 were obtained.
  • the obtained semiconductor chips with die bonding films of Examples 1 to 3 were subjected to a wiring board (organic substrate with solder resist, solder resist: Taiyo Holdings Co., Ltd.) under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1.0 second.
  • the embedding property of the dicing / die bonding film was evaluated using the dicing / die bonding integrated adhesive sheet of Examples 1 to 3 which was excellent in splittability.
  • the embedding property is evaluated in the same manner as the fabrication of the semiconductor chip used in the measurement of die shear strength, except that a semiconductor wafer having a thickness of 75 ⁇ m is prepared and the chip size is adjusted to 7.5 mm ⁇ 7.5 mm.
  • the semiconductor chips with die bonding films of Examples 1 to 3 for this purpose were produced.
  • the semiconductor chips with die bonding films of Examples 1 to 3 were subjected to a temperature of 120 ° C., a pressure of 0.15 MPa, and a time of 1.0 second, and a wiring board (organic substrate with solder resist, solder resist: Taiyo Holdings Co., Ltd., trade name).
  • a sample attached to "AUS308", unevenness on the substrate: about 6 ⁇ m) was prepared, and the sample was heated at 150 ° C. for 6 hours on a hot plate to be cured. After that, the semiconductor chip is sealed at 175 ° C., 6.9 MPa, and 120 seconds using a mold encapsulant (manufactured by Hitachi Chemical Co., Ltd., trade name "CEL-9700HF”) to prepare an evaluation package.
  • a mold encapsulant manufactured by Hitachi Chemical Co., Ltd., trade name "CEL-9700HF
  • the wiring board of the evaluation package was observed with an ultrasonic microscope to confirm the embedding property of the unevenness on the board. Those having no voids on the unevenness on the substrate were evaluated as "A” as having good embedding property, and those having voids were evaluated as "B” as having poor embedding property. The results are shown in Table 1.
  • the die bonding film having a breaking elongation at -15 ° C of 5% or less has excellent breakability.

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PCT/JP2019/013409 2019-03-27 2019-03-27 半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート WO2020194613A1 (ja)

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KR1020217031373A KR20210144731A (ko) 2019-03-27 2020-03-13 반도체 장치의 제조 방법, 다이본딩 필름, 및 다이싱·다이본딩 일체형 접착 시트
PCT/JP2020/011256 WO2020195981A1 (ja) 2019-03-27 2020-03-13 半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート
SG11202109887Q SG11202109887QA (en) 2019-03-27 2020-03-13 Production method for semiconductor device, die-bonding film, and dicing/die-bonding integrated adhesive sheet
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