KR20210144731A - 반도체 장치의 제조 방법, 다이본딩 필름, 및 다이싱·다이본딩 일체형 접착 시트 - Google Patents
반도체 장치의 제조 방법, 다이본딩 필름, 및 다이싱·다이본딩 일체형 접착 시트 Download PDFInfo
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Images
Classifications
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- C—CHEMISTRY; METALLURGY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Die Bonding (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/013409 WO2020194613A1 (ja) | 2019-03-27 | 2019-03-27 | 半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート |
JPPCT/JP2019/013409 | 2019-03-27 | ||
PCT/JP2020/011256 WO2020195981A1 (ja) | 2019-03-27 | 2020-03-13 | 半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20210144731A true KR20210144731A (ko) | 2021-11-30 |
Family
ID=72610308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020217031373A KR20210144731A (ko) | 2019-03-27 | 2020-03-13 | 반도체 장치의 제조 방법, 다이본딩 필름, 및 다이싱·다이본딩 일체형 접착 시트 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPWO2020195981A1 (zh) |
KR (1) | KR20210144731A (zh) |
CN (1) | CN113646871A (zh) |
SG (1) | SG11202109887QA (zh) |
TW (1) | TW202105489A (zh) |
WO (2) | WO2020194613A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023209986A1 (ja) * | 2022-04-28 | 2023-11-02 | 株式会社レゾナック | 薄型配線部材の製造方法、薄型配線部材、及び、配線基板の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158276A (ja) | 2000-11-20 | 2002-05-31 | Hitachi Chem Co Ltd | ウエハ貼着用粘着シートおよび半導体装置 |
JP2002226796A (ja) | 2001-01-29 | 2002-08-14 | Hitachi Chem Co Ltd | ウェハ貼着用粘着シート及び半導体装置 |
JP2003338467A (ja) | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | 半導体基板の切断方法 |
WO2004109786A1 (ja) | 2003-06-06 | 2004-12-16 | Hitachi Chemical Co., Ltd. | 接着シート、ダイシングテープ一体型接着シート、及び半導体装置の製造方法 |
JP2011216508A (ja) | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5449622B2 (ja) * | 2011-07-01 | 2014-03-19 | 古河電気工業株式会社 | 接着フィルム、並びにダイシングダイボンディングフィルム及びそれを用いた半導体加工方法 |
JP6135202B2 (ja) * | 2013-03-08 | 2017-05-31 | 日立化成株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6068386B2 (ja) * | 2014-03-31 | 2017-01-25 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法 |
JP6310748B2 (ja) * | 2014-03-31 | 2018-04-11 | 日東電工株式会社 | ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法 |
JP6574685B2 (ja) * | 2015-11-12 | 2019-09-11 | 日東電工株式会社 | ダイシング・ダイボンドフィルム及び半導体装置の製造方法 |
JP6670177B2 (ja) * | 2016-05-30 | 2020-03-18 | 日東電工株式会社 | ダイボンドフィルム、ダイシングダイボンドフィルム、及び、半導体装置の製造方法 |
JP6812213B2 (ja) * | 2016-11-14 | 2021-01-13 | 日東電工株式会社 | シート、テープおよび半導体装置の製造方法 |
JP6775436B2 (ja) * | 2017-02-02 | 2020-10-28 | リンテック株式会社 | フィルム状接着剤、半導体加工用シート及び半導体装置の製造方法 |
JP7069561B2 (ja) * | 2017-04-10 | 2022-05-18 | 昭和電工マテリアルズ株式会社 | 積層板の製造方法、プリント配線板の製造方法、及び半導体パッケージの製造方法 |
-
2019
- 2019-03-27 WO PCT/JP2019/013409 patent/WO2020194613A1/ja active Application Filing
-
2020
- 2020-03-13 KR KR1020217031373A patent/KR20210144731A/ko unknown
- 2020-03-13 WO PCT/JP2020/011256 patent/WO2020195981A1/ja active Application Filing
- 2020-03-13 CN CN202080022034.4A patent/CN113646871A/zh active Pending
- 2020-03-13 JP JP2021509063A patent/JPWO2020195981A1/ja active Pending
- 2020-03-13 SG SG11202109887Q patent/SG11202109887QA/en unknown
- 2020-03-24 TW TW109109822A patent/TW202105489A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158276A (ja) | 2000-11-20 | 2002-05-31 | Hitachi Chem Co Ltd | ウエハ貼着用粘着シートおよび半導体装置 |
JP2002226796A (ja) | 2001-01-29 | 2002-08-14 | Hitachi Chem Co Ltd | ウェハ貼着用粘着シート及び半導体装置 |
JP2003338467A (ja) | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | 半導体基板の切断方法 |
WO2004109786A1 (ja) | 2003-06-06 | 2004-12-16 | Hitachi Chemical Co., Ltd. | 接着シート、ダイシングテープ一体型接着シート、及び半導体装置の製造方法 |
JP2011216508A (ja) | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
Also Published As
Publication number | Publication date |
---|---|
WO2020194613A1 (ja) | 2020-10-01 |
WO2020195981A1 (ja) | 2020-10-01 |
TW202105489A (zh) | 2021-02-01 |
CN113646871A (zh) | 2021-11-12 |
SG11202109887QA (en) | 2021-10-28 |
JPWO2020195981A1 (zh) | 2020-10-01 |
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