WO2020188987A1 - Cible de pulvérisation et procédé de production de cible de pulvérisation - Google Patents

Cible de pulvérisation et procédé de production de cible de pulvérisation Download PDF

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Publication number
WO2020188987A1
WO2020188987A1 PCT/JP2020/001602 JP2020001602W WO2020188987A1 WO 2020188987 A1 WO2020188987 A1 WO 2020188987A1 JP 2020001602 W JP2020001602 W JP 2020001602W WO 2020188987 A1 WO2020188987 A1 WO 2020188987A1
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WIPO (PCT)
Prior art keywords
sputtering target
sputtering
temperature
phase
less
Prior art date
Application number
PCT/JP2020/001602
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English (en)
Japanese (ja)
Inventor
慎治 曽川
荒川　篤俊
Original Assignee
Ｊｘ金属株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｊｘ金属株式会社 filed Critical Ｊｘ金属株式会社
Priority to KR1020217032233A priority Critical patent/KR20210134760A/ko
Priority to JP2021506197A priority patent/JPWO2020188987A1/ja
Priority to CN202080022678.3A priority patent/CN113614281A/zh
Publication of WO2020188987A1 publication Critical patent/WO2020188987A1/fr
Priority to JP2023213307A priority patent/JP2024037947A/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor

Definitions

  • This specification discloses a sputtering target and a technique relating to a method for manufacturing the sputtering target.
  • MRAM magnetoresistive memory
  • a material to which boron is added may be used for the perpendicular magnetization film of the tunnel magnetoresistive element which is a component thereof.
  • Such a perpendicularly magnetized film can be formed by a sputtering method using a sputtering target containing boron and at least one of iron and cobalt.
  • Examples of the boron-containing sputtering target used for such a magnetoresistive memory or other applications include those described in Patent Documents 1 to 4.
  • Patent Documents 1 and 2 describe "a magnetic material sputtering target made of a sintered body having a B content of 26 at% or more and 40 at% or less and a residue selected from Co or Fe.
  • the target has a high-concentration phase of B and a low-concentration phase of B, and the maximum inscribed circle that can be drawn in the high-concentration phase of B has a diameter of 15 ⁇ m or more and one or less magnetic material sputtering.
  • “Target” is described.
  • a magnetic material target raw material powder having a B content of 26 at% or more and 40 at% or less and a residue selected from Co or Fe is prepared by a gas atomization method.
  • This gas atomizing raw material powder is sintered and used as a target, the target is a structure in which a high concentration phase of B and a low concentration phase of B are present, and the diameter of the maximum inscribed circle that can be drawn in the high concentration phase of B is 15 ⁇ m or more.
  • Patent Documents 3 and 4 describe that (CoFe) 2 B (200) in a sputtering target material containing 10 to 50% of B at at.%, The balance of which is at least one of Co and Fe, and unavoidable impurities. ) X-ray diffraction intensity [I [(CoFe) 2 B]] and (CoFe) 3 B (121) X-ray diffraction intensity [I [(CoFe) 3 B]] to the intensity ratio [I [(CoFe)) A CoFeB-based alloy sputtering target material having 3 B] / I [(CoFe) 2 B]] of 1.50 or less ”is described.
  • boron-containing sputtering target in particular, a boron-containing target containing a predetermined amount of boron and further containing iron, generates a large amount of particles during sputtering, which causes a decrease in product yield. There was a problem.
  • This specification discloses a sputtering target capable of effectively reducing particles and a method for manufacturing the sputtering target.
  • the sputtering target disclosed in this specification contains B in an amount of 10 at% to 20 at%, contains Fe in the balance, and has an average area of Fe—B phase of 20 ⁇ m 2 or less by SEM image observation.
  • the method for producing a sputtering target disclosed in this specification is that a raw material powder containing B at 10 at% to 20 at% and Fe is pressed at a temperature of 800 ° C. or higher and lower than 900 ° C. for 1 to 3 hours. It includes a sintering step of holding.
  • the sputtering target of one embodiment contains B in an amount of 10 at% to 20 at% and Fe in the balance, and the average area of the Fe—B phase by SEM image observation is 20 ⁇ m 2 or less.
  • the raw material powder is baked after a sintering step in which a predetermined raw material powder is held at a temperature of 800 ° C. or higher and lower than 900 ° C. for 1 to 3 hours while being pressurized. Obtained as a unity.
  • the sputtering target shall contain at least B (boron) and Fe (iron).
  • the content of B is 10 at% to 20 at%, preferably 14 at% to 20 at%, and more preferably 16 at% to 20 at%. If the B content is too low, it is considered that the film formed by the sputtering target cannot exhibit the desired characteristics. On the other hand, if the B content is too large, the sinterability of the powder deteriorates, and particles are generated at a level that cannot be helped only by optimizing the sintering conditions.
  • the Fe content is, for example, 5 at% to 80 at%, typically 20 at% to 65 at%.
  • Sputtering targets may also contain Co.
  • the Co content is preferably 5 at% to 80 at%, and even more preferably 20 at% to 65 at%.
  • the purity which is the total content of B, Fe and Co, is preferably 3N (99.9% by mass) or more. When Co is not contained, the content of Co is 0 (zero) mass%. This is because if the purity is less than 3N, impurities may cause particle generation.
  • the purity is even more preferably 3N5 (99.95% by mass) or more. This purity can be determined by GDMS analysis.
  • the sputtering target may contain impurities such as Si and / or Ni in a total amount of 100 mass ppm or less. Impurities contained in this amount are acceptable.
  • Fe-B phase The Fe-B phase is present in the sputtering target having the composition as described above.
  • the average area of the Fe-B phase in the sputtering target is 20 ⁇ m 2 or less when observed by a SEM (scanning electron microscope) image on a cross section orthogonal to the sputtering surface used for sputtering.
  • SEM scanning electron microscope
  • the average area of the Fe—B phase in the sputtering target is preferably 15 ⁇ m 2 or less, and even more preferably 10 ⁇ m 2 or less.
  • the average area may be, for example, 2 ⁇ m 2 or more, typically 5 ⁇ m 2 or more.
  • the total area of the Fe-B phase and the number of Fe-B phases in the field of view of the SEM image having a cross section orthogonal to the sputtering surface are calculated by image analysis, and the total area is calculated. Divide by the number to obtain.
  • a contrast of two or more phases occurs, such that a relatively light element such as B appears black, while a relatively heavy element appears white. For example, see FIGS. 1 and 2).
  • those that are connected to each other by adjacent Fe-B phases count the entire series of Fe-B phases as one Fe-B phase.
  • FIG. 3 shows the result of performing image analysis on the SEM image of FIG. 2 and identifying the Fe-B phase reflected in black in the SEM image.
  • the surface roughness Ra of the post-use sputtering surface that appears after performing predetermined sputtering using the target is small.
  • the surface roughness Ra of the sputtering surface after use of the sputtering target is preferably 2.0 ⁇ m or less. is there.
  • model number C-7100GT manufactured by Canon Anerva can be used.
  • the grain boundaries between the Fe-B phases having different sputtering rates and the other phases are not remarkable, the occurrence of arcing and the like can be suppressed, and the number of particles can be further reduced.
  • particles may be generated due to arcing or the like.
  • the surface roughness Ra of the sputtering surface after use is more preferably 1.5 ⁇ m or less.
  • the surface roughness Ra of the sputtering surface after use may be, for example, 0.4 ⁇ m or more.
  • the density ratio of the sputtering target is preferably greater than 99%. This is because when the density ratio is larger than 99%, the internal defects of the target that cause particle generation can be reduced. In this respect, the density ratio is even more preferably 99.9% or more.
  • the density ratio of the sputtering target is measured by the Archimedes method.
  • the true value of the target sputtering target may be higher than the above theoretical density. Therefore, the density ratio calculated using the above theoretical density may exceed 100%.
  • the sputtering target described above can be manufactured, for example, as follows.
  • a raw material preparation step is performed in which B is contained in an amount of 10 at% to 30 at% and a raw material powder containing Fe is prepared.
  • the raw material powder shall have the content of each element adjusted so that the composition of the predetermined sputtering target as described above can be obtained. Therefore, the raw material powder shall further contain Co, if necessary.
  • the content of Co can be 5 at% to 80 at%.
  • the gas atomizing method When producing the raw material powder, it is preferable to use the gas atomizing method from the viewpoint of reducing the oxygen content of the raw material powder.
  • the gas atomization method for example, under an inert gas atmosphere, a molten metal in which B, Fe, Co and the like are dissolved is sprayed with a high-pressure gas to form a powder.
  • the average particle size D50 of the raw material powder is 50 ⁇ m to 300 ⁇ m, for example, by sieving the gas atomized powder. This facilitates sintering of the raw material powder in the subsequent sintering step and makes it possible to obtain a high-density sputtering target.
  • a sintering step can be performed in which the raw material powder is pressed and held under a predetermined temperature for a predetermined time. As a result, a predetermined sintered body is obtained.
  • a vacuum hot press method or other hot press method a plasma discharge sintering method, a hot hydrostatic pressure sintering method, or the like can be used.
  • the temperature at the time of pressurization is 800 ° C. or higher and lower than 900 ° C., and the temperature is maintained for 1 to 3 hours.
  • this temperature is less than 800 ° C.
  • the density will not increase sufficiently.
  • the temperature is 900 ° C. or higher
  • the average area and the surface roughness Ra are increased, and as a result, the particles are increased during sputtering.
  • the holding time is less than 1 hour, the density will not increase sufficiently.
  • the holding time is longer than 3 hours, the average area and the surface roughness Ra increase due to the grain growth with time.
  • the temperature at the time of pressurization is preferably 800 ° C. or higher and lower than 900 ° C., and further preferably 850 ° C. or higher and lower than 900 ° C.
  • the holding time is 1 hour to 3 hours, more preferably 1 hour to 2 hours.
  • the heating rate until reaching the above temperature is preferably 5 ° C./min or more, and further preferably 5 ° C./min to 10 ° C./min. Further, in the temperature lowering after reaching the above temperature, the temperature lowering rate is preferably 1 ° C./min or more. This is because by increasing the heating rate and the temperature decreasing rate, the heating time becomes shorter, and further suppression of grain growth and thereby a significant reduction in the average area and surface roughness Ra can be achieved. In order to realize a predetermined temperature lowering rate, forced cooling such as air cooling may be adopted.
  • the pressing force and the atmosphere can be appropriately determined according to various conditions.
  • the pressing force can be 15 MPa to 30 MPa and the atmosphere can be a vacuum atmosphere or the like.
  • the above sintered body is machined into a predetermined shape such as a disk by a lathe or surface grinding, and the surface thereof is polished. Thereby, the sputtering target can be manufactured.
  • a raw material powder prepared by the gas atomizing method and adjusted to contain B, Co and Fe with the composition shown in Table 1 was prepared. This raw material powder was pressurized under the conditions of the temperature, holding temperature and temperature rising rate shown in Table 1 in a vacuum atmosphere to obtain a sintered body. The pressing force was 29.42 MPa. The sintered body thus obtained was subjected to predetermined machining and polishing to prepare a sputtering target.
  • the average area was small in Examples 1 to 8 which were held at a temperature of 800 ° C. or higher and lower than 900 ° C. for 1 hour to 3 hours at the time of sintering. As a result, it was obtained that the number of particles in Examples 1 to 8 was small during sputtering.
  • Comparative Example 1 the average area increased and the number of particles increased due to the high temperature at the time of sintering.
  • Comparative Example 2 since the temperature at the time of sintering was low, the pores increased and the average area could not be measured.
  • the number of particles was large.
  • Comparative Example 3 the average area was large and the number of particles was large due to the long temperature holding time during sintering.
  • Comparative Examples 4 and 5 the B content was high, the average area could not be measured due to the pores, and the number of particles increased.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

L'invention concerne une cible de pulvérisation cathodique qui contient de 10 à 20 % de B, le reste comprenant du Fe. Comme observé par image MEB, la surface moyenne des phases Fe-B de la cible de pulvérisation n'est pas supérieure à 20 μm2.
PCT/JP2020/001602 2019-03-20 2020-01-17 Cible de pulvérisation et procédé de production de cible de pulvérisation WO2020188987A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020217032233A KR20210134760A (ko) 2019-03-20 2020-01-17 스퍼터링 타깃 및 스퍼터링 타깃의 제조 방법
JP2021506197A JPWO2020188987A1 (fr) 2019-03-20 2020-01-17
CN202080022678.3A CN113614281A (zh) 2019-03-20 2020-01-17 溅射靶及溅射靶的制造方法
JP2023213307A JP2024037947A (ja) 2019-03-20 2023-12-18 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019053797 2019-03-20
JP2019-053797 2019-03-20

Publications (1)

Publication Number Publication Date
WO2020188987A1 true WO2020188987A1 (fr) 2020-09-24

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PCT/JP2020/001602 WO2020188987A1 (fr) 2019-03-20 2020-01-17 Cible de pulvérisation et procédé de production de cible de pulvérisation

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JP (2) JPWO2020188987A1 (fr)
KR (1) KR20210134760A (fr)
CN (1) CN113614281A (fr)
TW (1) TWI732428B (fr)
WO (1) WO2020188987A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346423A (ja) * 2003-04-30 2004-12-09 Hitachi Metals Ltd Ｆｅ−Ｃｏ−Ｂ系合金ターゲット材、その製造方法、軟磁性膜および磁気記録媒体ならびにＴＭＲ素子
WO2006077692A1 (fr) * 2005-01-18 2006-07-27 Nippon Mining & Metals Co., Ltd. POUDRE D’ALLIAGE A BASE DE Sb-Te POUR FRITTAGE, CIBLE DE PULVERISATION FRITTEE PREPAREE EN FRITTANT LADITE POUDRE ET PROCEDE DE PREPARATION DE LADITE POUDRE
JP2007161540A (ja) * 2005-12-15 2007-06-28 Sanyo Special Steel Co Ltd ＦｅＣｏＢ系スパッタリングターゲット材の製造方法
JP2008127591A (ja) * 2006-11-17 2008-06-05 Sanyo Special Steel Co Ltd Ｃｏ−Ｂ系ターゲット材およびその製造方法
WO2015019513A1 (fr) * 2013-08-09 2015-02-12 Jx日鉱日石金属株式会社 Procédé pour la fabrication de poudre de terres rares à base de néodyme-fer-bore ou de cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore, poudre de terres rares à base de néodyme-fer-bore ou cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore et couche mince à base de néodyme-fer-bore pour aimant permanent à base de terres rares ou procédé de fabrication s'y rapportant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2547091A1 (fr) * 2006-05-18 2007-11-18 Hydro Quebec Procede de preparation de ceramiques, ceramiques ainsi obtenues et leurs utilisations notamment comme cible pour pulverisation cathodique
MY168701A (en) * 2012-03-15 2018-11-29 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and manufacturing method thereof
EP3015566B1 (fr) 2013-11-28 2021-09-15 JX Nippon Mining & Metals Corporation Cible de pulvérisation en matériau magnétique et son procédé de production
JP5812217B1 (ja) * 2014-04-17 2015-11-11 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
KR20170093951A (ko) * 2015-03-04 2017-08-16 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
JP6660130B2 (ja) 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346423A (ja) * 2003-04-30 2004-12-09 Hitachi Metals Ltd Ｆｅ−Ｃｏ−Ｂ系合金ターゲット材、その製造方法、軟磁性膜および磁気記録媒体ならびにＴＭＲ素子
WO2006077692A1 (fr) * 2005-01-18 2006-07-27 Nippon Mining & Metals Co., Ltd. POUDRE D’ALLIAGE A BASE DE Sb-Te POUR FRITTAGE, CIBLE DE PULVERISATION FRITTEE PREPAREE EN FRITTANT LADITE POUDRE ET PROCEDE DE PREPARATION DE LADITE POUDRE
JP2007161540A (ja) * 2005-12-15 2007-06-28 Sanyo Special Steel Co Ltd ＦｅＣｏＢ系スパッタリングターゲット材の製造方法
JP2008127591A (ja) * 2006-11-17 2008-06-05 Sanyo Special Steel Co Ltd Ｃｏ−Ｂ系ターゲット材およびその製造方法
WO2015019513A1 (fr) * 2013-08-09 2015-02-12 Jx日鉱日石金属株式会社 Procédé pour la fabrication de poudre de terres rares à base de néodyme-fer-bore ou de cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore, poudre de terres rares à base de néodyme-fer-bore ou cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore et couche mince à base de néodyme-fer-bore pour aimant permanent à base de terres rares ou procédé de fabrication s'y rapportant

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Publication number Publication date
TW202035749A (zh) 2020-10-01
TWI732428B (zh) 2021-07-01
KR20210134760A (ko) 2021-11-10
JP2024037947A (ja) 2024-03-19
JPWO2020188987A1 (fr) 2020-09-24
CN113614281A (zh) 2021-11-05

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