JPWO2020188987A1 - - Google Patents

Info

Publication number
JPWO2020188987A1
JPWO2020188987A1 JP2021506197A JP2021506197A JPWO2020188987A1 JP WO2020188987 A1 JPWO2020188987 A1 JP WO2020188987A1 JP 2021506197 A JP2021506197 A JP 2021506197A JP 2021506197 A JP2021506197 A JP 2021506197A JP WO2020188987 A1 JPWO2020188987 A1 JP WO2020188987A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021506197A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020188987A1 publication Critical patent/JPWO2020188987A1/ja
Priority to JP2023213307A priority Critical patent/JP2024037947A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
JP2021506197A 2019-03-20 2020-01-17 Pending JPWO2020188987A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023213307A JP2024037947A (ja) 2019-03-20 2023-12-18 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019053797 2019-03-20
PCT/JP2020/001602 WO2020188987A1 (fr) 2019-03-20 2020-01-17 Cible de pulvérisation et procédé de production de cible de pulvérisation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023213307A Division JP2024037947A (ja) 2019-03-20 2023-12-18 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Publications (1)

Publication Number Publication Date
JPWO2020188987A1 true JPWO2020188987A1 (fr) 2020-09-24

Family

ID=72520719

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021506197A Pending JPWO2020188987A1 (fr) 2019-03-20 2020-01-17
JP2023213307A Pending JP2024037947A (ja) 2019-03-20 2023-12-18 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023213307A Pending JP2024037947A (ja) 2019-03-20 2023-12-18 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Country Status (5)

Country Link
JP (2) JPWO2020188987A1 (fr)
KR (1) KR20210134760A (fr)
CN (1) CN113614281A (fr)
TW (1) TWI732428B (fr)
WO (1) WO2020188987A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346423A (ja) * 2003-04-30 2004-12-09 Hitachi Metals Ltd Ｆｅ−Ｃｏ−Ｂ系合金ターゲット材、その製造方法、軟磁性膜および磁気記録媒体ならびにＴＭＲ素子
WO2006077692A1 (fr) * 2005-01-18 2006-07-27 Nippon Mining & Metals Co., Ltd. POUDRE D’ALLIAGE A BASE DE Sb-Te POUR FRITTAGE, CIBLE DE PULVERISATION FRITTEE PREPAREE EN FRITTANT LADITE POUDRE ET PROCEDE DE PREPARATION DE LADITE POUDRE
JP2008127591A (ja) * 2006-11-17 2008-06-05 Sanyo Special Steel Co Ltd Ｃｏ−Ｂ系ターゲット材およびその製造方法
WO2015019513A1 (fr) * 2013-08-09 2015-02-12 Jx日鉱日石金属株式会社 Procédé pour la fabrication de poudre de terres rares à base de néodyme-fer-bore ou de cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore, poudre de terres rares à base de néodyme-fer-bore ou cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore et couche mince à base de néodyme-fer-bore pour aimant permanent à base de terres rares ou procédé de fabrication s'y rapportant

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4699194B2 (ja) * 2005-12-15 2011-06-08 山陽特殊製鋼株式会社 ＦｅＣｏＢ系スパッタリングターゲット材の製造方法
CA2547091A1 (fr) * 2006-05-18 2007-11-18 Hydro Quebec Procede de preparation de ceramiques, ceramiques ainsi obtenues et leurs utilisations notamment comme cible pour pulverisation cathodique
JP5876138B2 (ja) * 2012-03-15 2016-03-02 Ｊｘ金属株式会社 磁性材スパッタリングターゲット及びその製造方法
KR20180088491A (ko) 2013-11-28 2018-08-03 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
JP5812217B1 (ja) * 2014-04-17 2015-11-11 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
SG11201704465WA (en) * 2015-03-04 2017-06-29 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and method for producing same
JP6660130B2 (ja) 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346423A (ja) * 2003-04-30 2004-12-09 Hitachi Metals Ltd Ｆｅ−Ｃｏ−Ｂ系合金ターゲット材、その製造方法、軟磁性膜および磁気記録媒体ならびにＴＭＲ素子
WO2006077692A1 (fr) * 2005-01-18 2006-07-27 Nippon Mining & Metals Co., Ltd. POUDRE D’ALLIAGE A BASE DE Sb-Te POUR FRITTAGE, CIBLE DE PULVERISATION FRITTEE PREPAREE EN FRITTANT LADITE POUDRE ET PROCEDE DE PREPARATION DE LADITE POUDRE
JP2008127591A (ja) * 2006-11-17 2008-06-05 Sanyo Special Steel Co Ltd Ｃｏ−Ｂ系ターゲット材およびその製造方法
WO2015019513A1 (fr) * 2013-08-09 2015-02-12 Jx日鉱日石金属株式会社 Procédé pour la fabrication de poudre de terres rares à base de néodyme-fer-bore ou de cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore, poudre de terres rares à base de néodyme-fer-bore ou cible de pulvérisation cathodique en terres rares à base de néodyme-fer-bore et couche mince à base de néodyme-fer-bore pour aimant permanent à base de terres rares ou procédé de fabrication s'y rapportant

Also Published As

Publication number Publication date
TWI732428B (zh) 2021-07-01
TW202035749A (zh) 2020-10-01
CN113614281A (zh) 2021-11-05
WO2020188987A1 (fr) 2020-09-24
JP2024037947A (ja) 2024-03-19
KR20210134760A (ko) 2021-11-10

Similar Documents

Publication Publication Date Title
BR112019017762A2 (fr)
BR112021017339A2 (fr)
BR112021018450A2 (fr)
BR112021017939A2 (fr)
BR112021017892A2 (fr)
BR112019016141A2 (fr)
AU2020104490A4 (fr)
BR112021017738A2 (fr)
BR112021017782A2 (fr)
BR112019016138A2 (fr)
BR112019016142A2 (fr)
BR112021018168A2 (fr)
BR112021017728A2 (fr)
BR112021008711A2 (fr)
BR112021017234A2 (fr)
BR112021017355A2 (fr)
BR112021018102A2 (fr)
BR112021017173A2 (fr)
BR112021017083A2 (fr)
BR112021017637A2 (fr)
BR112021018452A2 (fr)
BR112021018250A2 (fr)
BR112021018093A2 (fr)
BR112021018084A2 (fr)
BR112021017703A2 (fr)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210812

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221101

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230228

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20230501

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230919