WO2020134666A1 - 控制电路与表面声波滤波器的集成方法和集成结构 - Google Patents

控制电路与表面声波滤波器的集成方法和集成结构 Download PDF

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Publication number
WO2020134666A1
WO2020134666A1 PCT/CN2019/117791 CN2019117791W WO2020134666A1 WO 2020134666 A1 WO2020134666 A1 WO 2020134666A1 CN 2019117791 W CN2019117791 W CN 2019117791W WO 2020134666 A1 WO2020134666 A1 WO 2020134666A1
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Prior art keywords
substrate
layer
control circuit
output electrode
input electrode
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PCT/CN2019/117791
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English (en)
French (fr)
Inventor
秦晓珊
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中芯集成电路（宁波）有限公司上海分公司
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Application filed by 中芯集成电路（宁波）有限公司上海分公司 filed Critical 中芯集成电路（宁波）有限公司上海分公司
Priority to US17/417,947 priority Critical patent/US20220077844A1/en
Priority to JP2021525274A priority patent/JP2022507089A/ja
Publication of WO2020134666A1 publication Critical patent/WO2020134666A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the invention relates to the technical field of acoustic wave filters, in particular to an integrated method and integrated structure of a control circuit and a surface acoustic wave (SAW) filter.
  • SAW surface acoustic wave
  • SAW is an elastic wave that is generated and propagated on the surface of the piezoelectric substrate material, and the amplitude decreases rapidly as the depth of the substrate material increases.
  • the basic structure of the SAW filter is to make two acoustoelectric transducers-comb electrode interdigital transducers (Interdigital) on a substrate material with piezoelectric characteristics Transducer, IDT), respectively used as transmitting transducer and receiving transducer.
  • the working frequency band of SAW filter is generally 800MHz ⁇ 2GHz, and the bandwidth is 17MHz ⁇ 30MHz. Due to its good selection, frequency bandwidth, stable performance and high reliability, it has become the most widely used RF filter.
  • a single SAW filter is generally packaged as a discrete device and then integrated on a printed circuit board (PCB).
  • PCB printed circuit board
  • Such a separate package and then system integration brings about problems such as complicated SIP wiring and large insertion loss, and the need to introduce discrete switches, selection, and control devices to control the SAW filter, which increases the process complexity and manufacturing cost.
  • the purpose of the present invention is to propose an integrated method of a control circuit and a surface acoustic wave (SAW) filter and a corresponding integrated structure to overcome the problems of complicated SIP wiring and large insertion loss in the packaging and integration process of the existing SAW filter.
  • SAW surface acoustic wave
  • An aspect of the present invention provides an integrated method of a control circuit and a surface acoustic wave (SAW) filter, including:
  • the substrate being formed with a control circuit
  • a SAW resonator plate the surface of the SAW resonator plate is provided with an input electrode and an output electrode;
  • the control circuit is electrically connected to the input electrode and the output electrode.
  • the base includes a substrate and a first dielectric layer formed on the substrate;
  • the forming a cavity on the substrate includes:
  • the cavity is formed in the first dielectric layer.
  • the substrate includes one of an SOI substrate, a silicon substrate, a germanium substrate, a silicon germanium substrate, and a gallium arsenide substrate.
  • control circuit includes a device structure and a first interconnect structure layer electrically connected to the device structure, the first interconnect structure layer is located on the first dielectric layer, and is connected to the input electrode and output The electrodes are electrically connected.
  • the device structure includes a MOS device.
  • the electrically connecting the control circuit to the input electrode and the output electrode includes:
  • the first pad is electrically connected to the input electrode and the output electrode, so that the input electrode and the output electrode pass through the first pad and the first A redistribution layer is electrically connected to the control circuit.
  • the surface of the SAW resonator plate is directed toward the substrate, and the step of bonding the SAW resonator plate to the substrate and closing the cavity includes:
  • the SAW resonator sheet is bonded to the substrate through the bonding structure.
  • the adhesive structure includes a dry film.
  • the cavity is formed in the dry film by exposure and development.
  • the adhesive structure is formed by an adhesive layer patterned by screen printing.
  • the integration method further includes: forming a second redistribution layer on the back of the substrate, and electrically connecting the input electrode, the output electrode, and the control circuit.
  • the second redistribution layer includes I/O pads.
  • An encapsulation layer is formed, the encapsulation layer covering the substrate and the SAW resonator sheet.
  • the integration method further includes:
  • a third redistribution layer is formed on the packaging layer, and is electrically connected to the input electrode, output electrode, and control circuit.
  • both the input electrode and the output electrode include solder pads.
  • Another aspect of the present invention provides an integrated structure of a control circuit and a surface acoustic wave (SAW) filter, including:
  • the surface of the SAW resonator plate is provided with an input electrode and an output electrode, the surface of the SAW resonator plate is bonded to the substrate toward the substrate and closes the cavity;
  • the control circuit is electrically connected to the input electrode and the output electrode.
  • the base includes a substrate and a first dielectric layer formed on the substrate; the cavity is formed in the first dielectric layer;
  • the substrate and the SAW resonator sheet are bonded by an adhesive structure, and the cavity is formed in the adhesive structure.
  • the adhesive structure is a dry film.
  • the substrate includes one of an SOI substrate, a silicon substrate, a germanium substrate, a silicon germanium substrate, and a gallium arsenide substrate.
  • control circuit includes a device structure and a first interconnect structure layer electrically connected to the device structure, the first interconnect structure layer is located on the first dielectric layer, and is connected to the input electrode and output The electrodes are electrically connected.
  • the device structure includes a MOS device.
  • a first redistribution layer and a first pad are formed on the substrate, and the first pad is electrically connected to the input electrode and the output electrode to pass the input electrode and the output electrode
  • the first bonding pad and the first redistribution layer are electrically connected to the control circuit.
  • the integrated structure further includes a second redistribution layer formed on the back of the substrate, and is electrically connected to the input electrode, output electrode, and control circuit.
  • the second redistribution layer includes I/O pads.
  • the integrated structure further includes an encapsulation layer that covers the substrate and the SAW resonator sheet.
  • the integrated structure further includes a third redistribution layer formed on the encapsulation layer, and is electrically connected to the input electrode, output electrode, and control circuit.
  • both the input electrode and the output electrode include solder pads.
  • the beneficial effect of the present invention is that the cavity required for the control circuit and the SAW filter is formed on the substrate, and then the existing SAW resonator is installed in the cavity to realize the control of the SAW filter by the control circuit, thereby avoiding the existing SAW
  • the filter is integrated into the PCB, which leads to problems such as complicated electrical connection process and large insertion loss. It has high integration and reduces process cost.
  • 1 to 7 respectively show the various processes of the integration method of the control circuit and the surface acoustic wave (SAW) filter according to the first embodiment of the present invention
  • FIGS. 8 to 10 respectively show various processes of electrically connecting SAW resonators according to the integration method of the control circuit and the surface acoustic wave (SAW) filter according to the second embodiment of the present invention.
  • SAW surface acoustic wave
  • an embodiment of the present invention provides an integration method and integrated structure of a control circuit and a surface acoustic wave (SAW) filter.
  • SAW surface acoustic wave
  • a method for integrating a control circuit and a surface acoustic wave (SAW) filter includes: providing a substrate with a control circuit formed on the substrate; forming a cavity on the substrate; providing a SAW resonator plate with a surface provided on the SAW resonator plate The input electrode and the output electrode; the surface of the SAW resonator plate is directed to the substrate, and the SAW resonator plate is bonded to the substrate and closes the cavity; the control circuit is electrically connected to the input electrode and the output electrode.
  • the integration method according to the embodiment of the present invention forms the cavity required for the control circuit and the SAW filter on the substrate, and then installs the existing SAW resonator plate in the cavity to realize the control of the SAW filter by the control circuit, thereby avoiding the current
  • problems such as the complicated electrical connection process and large insertion loss caused by the integration of the SAW filter as a discrete device on the PCB.
  • the integration is high and the process cost is reduced.
  • FIGS. 1 to 7 respectively show various processes of the integration method of the control circuit and the surface acoustic wave (SAW) filter according to the first embodiment of the present invention.
  • the integration method includes the following steps:
  • S1 Referring to FIGS. 1 to 4, a substrate is provided, and the substrate is formed with a control circuit.
  • the base includes a substrate and a first dielectric layer 401 formed on the substrate.
  • the substrate includes one of an SOI substrate, a silicon substrate, a germanium substrate, a silicon germanium substrate, and a gallium arsenide substrate. Those skilled in the art can also select the type of substrate according to the control circuit formed on the substrate.
  • the substrate is an SOI substrate.
  • SOI Silicon-on-Insulator
  • SOI silicon-on-insulator
  • Its structure can be a double-layer structure of an insulating silicon substrate plus a top single-crystal silicon layer, or a sandwich structure with an insulating layer as an intermediate layer (called a buried layer) .
  • a buried layer When manufacturing a device, only a thin silicon layer on the top layer is used as a device manufacturing layer to form a source, a drain, a channel region, and the like, and a silicon substrate only serves as a support.
  • the buried layer in the sandwich structure electrically isolates the device fabrication layer from the silicon substrate, thereby reducing the impact of the silicon substrate on device performance.
  • SOI has the advantages of reducing parasitic capacitance, reducing power consumption and eliminating latch-up effect in device performance.
  • the typical process for obtaining SOI substrates is the Smart-cutTM process.
  • an SOI substrate is selected to take advantage of the above-mentioned advantages of SOI.
  • the SOI substrate includes a silicon substrate 101, an insulating layer 102 on the silicon substrate 101, and a silicon top layer 103 on the insulating layer 102, or the SOI substrate may be insulating Double-layer structure of layer plus top silicon.
  • the first dielectric layer 401 is a low-K dielectric material layer, such as a silicon oxide layer.
  • the first dielectric layer 401 may be formed by chemical vapor deposition (CVP), and the first dielectric layer 401 is used to form a cavity 402 necessary for the operation of the SAW filter.
  • CVP chemical vapor deposition
  • the control circuit includes a device structure and a first interconnect structure layer electrically connected to the device structure.
  • the first interconnect structure layer is located in the first dielectric layer 401.
  • the device structure includes MOS devices, such as MOS switches, which may be nMOS or pMOS switches.
  • the MOS switch includes a source 201, a drain 202, and a gate 203, and further includes a gate dielectric layer 204 or a gate dielectric region on the surface of the silicon top layer 103 to isolate the source, drain, and gate.
  • LDD Low Dose Drain
  • S/D IMP Source/Drain Implantation
  • the first interconnect structure layer includes a first conductive pillar 404 and a first circuit layer 405 that are electrically connected to the device structure in sequence.
  • first a first through hole penetrating the first dielectric layer 401 and a first trench provided on the surface of the first dielectric layer are formed, and then the first through hole and the first trench are filled with electrical connection material, To form the first conductive pillar 404 and the first circuit layer 405.
  • a first via hole penetrating the first dielectric layer 401 and a first trench provided on the surface of the first dielectric layer 401 can be formed by etching, the first trench defines a path for local interconnection of metal, and then is deposited (for example Sputtering) Filling the first through hole and the first trench with an electrical connection material, the electrical connection material is preferably copper, tungsten, titanium, or the like.
  • the gate dielectric layer 204 is formed on the silicon top layer 103, so the first via hole also penetrates the gate dielectric layer 204.
  • the first redistribution layer 406 and the first pad 407 are formed on the substrate.
  • the redistribution layer 406 is electrically connected to the first circuit layer 405 of the control circuit.
  • the first redistribution layer 406 can be formed by deposition, and the first pad 407 can be similarly formed by etching and deposition.
  • an inwardly recessed cavity 402 is formed on the first dielectric layer 401 by etching.
  • an adhesive structure 408 is formed on the surface of the substrate for subsequent bonding of the SAW resonator plate to the substrate.
  • the adhesive structure 408 may be a dry film or other types of chip connection films.
  • a layer of dry film is pasted on the surface of the substrate, and then the dry film is patterned, and then the dry film is exposed and developed and etched first
  • the dielectric layer 401 forms an inwardly recessed cavity 402 on the substrate, and the remaining dry film portion forms an adhesive structure 408.
  • the adhesive structure 408 is formed by a screen printed patterned adhesive layer.
  • the material of the adhesive layer is usually epoxy resin. Through the screen printing method, a patterned adhesive layer can be directly formed on the surface of the substrate without the steps of photolithography, exposure and development to achieve patterning.
  • the first redistribution layer 406 when the first redistribution layer 406 is formed on the substrate, before forming the cavity on the substrate, under the condition of heat and pressure, a layer of dry film is pasted on the surface of the first redistribution layer 406, and then dry The film is patterned, and then the dry film is exposed and developed and the first dielectric layer 401 is etched to form an inwardly recessed cavity 402 on the substrate, and the remaining dry film portion forms an adhesive structure 408.
  • the cavity 402 may be formed in the adhesive structure 408.
  • S3 Referring to FIG. 5, a SAW resonator plate is provided, and an input electrode and an output electrode are provided on the surface of the SAW resonator plate.
  • the SAW resonator plate includes a piezoelectric substrate 301, a pair of comb electrodes 302 provided on the piezoelectric substrate 301, an input electrode and an output electrode (not shown), the input electrode and the output electrode are respectively A pair of comb-shaped electrodes 302 are electrically connected.
  • both the input electrode and the output electrode include solder pads.
  • a pair of comb-shaped electrodes 302 are used as a transmitting transducer and a receiving transducer respectively.
  • the transmitting transducer converts the electrical signal into a surface acoustic wave, propagates on the surface of the piezoelectric substrate 301, and after a certain delay, the receiving transducer
  • the device converts the sound wave signal into an electrical signal output.
  • the filtering process is realized in the conversion of electricity to sound and sound to electricity.
  • the input electrode and the output electrode are located on the first surface of the piezoelectric substrate 301.
  • the first surface faces the cavity 402, and the SAW resonator is bonded to the substrate and closes the cavity 402.
  • a ring-shaped adhesive structure 408 is formed on the surface of the substrate and the periphery of the cavity 402; the piezoelectric substrate 301 of the SAW resonator is bonded to the substrate through the adhesive structure 408, thereby bonding the SAW resonator On the base and close the cavity 402.
  • the piezoelectric structure 408 can firmly fix the piezoelectric substrate 301 to the substrate.
  • the control circuit is electrically connected to the input electrode and the output electrode.
  • the control circuit may include a device structure and a first interconnect structure layer electrically connected to the device structure, and the first interconnect structure layer is located in the first dielectric layer 401. Accordingly, the control circuit is electrically connected to the input electrode and the output electrode, that is, after bonding the SAW resonator plate, the first interconnection structure layer is electrically connected to the input electrode and the output electrode.
  • a first redistribution layer 406 and a first pad 407 may be formed on the substrate.
  • electrically connecting the control circuit to the input electrode and the output electrode includes:
  • the first redistribution layer 406 and the first pad 407 are formed on the first interconnect structure layer;
  • the first pad 407 is electrically connected to the input electrode and the output electrode, so that the input electrode and the output electrode are electrically connected to the control circuit through the first pad 407 and the first redistribution layer 406.
  • the integration method may further include the following steps S6 and S7:
  • an encapsulation layer 403 is formed, and the encapsulation layer covers the substrate and the SAW resonator sheet.
  • the encapsulation layer 403 may be formed by a molding method, and the material used for the molding may be epoxy resin.
  • the silicon substrate 101 is removed to reduce the integrated structure.
  • the silicon substrate 101 can be removed by chemical mechanical polishing (CMP).
  • a third redistribution layer 409 is formed on the encapsulation layer 403, and is electrically connected to the input electrode, the output electrode, and the control circuit.
  • a second through hole penetrating through the encapsulation layer 403 is formed, an electrical connection material is filled in the second through hole to form a second conductive pillar 410, and then a third heavy wiring layer 409 is formed on the encapsulation layer 403.
  • the wiring layer 409 is electrically connected to the second conductive pillar 410.
  • the third redistribution layer 409 also includes an I/O pad 411.
  • the second via hole may be formed by etching, and the second via hole is filled with an electrical connection material (eg, copper) by deposition (eg, sputtering) to form the second conductive pillar 410.
  • the I/O pad 411 can be connected to an external power source.
  • the integration method of the control circuit and the SAW filter according to the second embodiment of the present invention also includes the aforementioned steps S1 to S7, which differs from the first embodiment in step S8.
  • the integration method according to the second embodiment of the present invention includes performing the following steps after step S7:
  • a second redistribution layer is formed on the back of the substrate, and is electrically connected to the input electrode, output electrode, and control circuit.
  • the first through-insulation layer 102, the silicon top layer 103, and the first dielectric layer 401 are formed.
  • a second redistribution layer 503 electrically connected to the second circuit layer 502 and the third conductive pillar 501 in this order is formed on the surface of the insulating layer 102.
  • the second redistribution layer 503 further includes an I/O pad 411.
  • An embodiment of the present invention also provides an integrated structure of a control circuit and a surface acoustic wave (SAW) filter, which includes: a substrate, a control circuit is formed on the substrate, and a cavity is formed on the substrate; a SAW resonator plate is provided on the surface of the SAW resonator plate The input electrode and the output electrode, the surface of the SAW resonator plate is bonded to the substrate toward the substrate and closes the cavity; the control circuit is electrically connected to the input electrode and the output electrode.
  • SAW surface acoustic wave
  • the integrated structure according to the embodiment of the present invention realizes the control of the SAW filter through the control circuit formed on the substrate, thereby avoiding the problems of complicated electrical connection process and large insertion loss caused by the integration of the existing SAW filter as a discrete device on the PCB. High degree of integration and reduced process cost.
  • the integrated structure of the control circuit and the SAW filter according to the first embodiment of the present invention includes:
  • a substrate, a control circuit is formed on the substrate, and a cavity 402 is formed on the substrate;
  • the surface of the SAW resonator plate is provided with an input electrode and an output electrode, the surface of the SAW resonator plate faces the substrate and is bonded to the substrate and closes the cavity 402;
  • the control circuit is electrically connected to the input electrode and the output electrode.
  • the base includes a substrate and a first dielectric layer 401 formed on the substrate, wherein the substrate is an SOI substrate; the SOI substrate includes an insulating layer 102 and a silicon top layer 103 on the insulating layer 102.
  • the control circuit includes a device structure and a first interconnect structure layer electrically connected to the device structure.
  • the device structure includes a MOS switch including a source 201 and a drain 202 formed in the silicon top layer 103 of the SOI substrate, and a gate dielectric layer 204 and a gate 203 formed on the silicon top layer 103.
  • the first interconnect structure layer is located on the first dielectric layer 401 and is electrically connected to the input electrode and the output electrode; specifically, the first interconnect structure layer includes a first conductive pillar 404 and a first circuit layer 405 that are electrically connected to the device structure in sequence .
  • the cavity 402 is formed in the first dielectric layer 401.
  • the SAW resonator sheet includes a piezoelectric substrate 301, a pair of comb electrodes 302 provided on the piezoelectric substrate 301, an input electrode and an output electrode, and the input electrode and the output electrode are electrically connected to the pair of comb electrodes 302, respectively.
  • both the input electrode and the output electrode include solder pads.
  • the integrated structure further includes a first redistribution layer 406 and a first pad 407 formed on the substrate.
  • the first pad 407 is electrically connected to the input electrode and the output electrode to pass the input electrode and the output electrode
  • the first pad 407 and the first redistribution layer 406 are electrically connected to the control circuit.
  • the substrate and the SAW resonator plate are bonded by a ring-shaped adhesive structure 408, which is provided on the first redistribution layer 406 and the outer periphery of the cavity 402.
  • the adhesive structure 408 is a dry film or through a wire mesh Adhesive layer formed by printing, or other chip connection film.
  • the integrated structure further includes an encapsulation layer 403 that covers the substrate and the SAW resonator sheet.
  • the integrated structure further includes a third redistribution layer 409, which is electrically connected to the input electrode, the output electrode, and the control circuit.
  • the third redistribution layer 409 is electrically connected to the second conductive pillar 410 penetrating the encapsulation layer 403, and the third redistribution layer 409 further includes an I/O pad 411.
  • the integrated structure of the control circuit and the surface acoustic wave (SAW) filter according to the second embodiment of the present invention differs from the first embodiment in that external I/O electrical connections are made from the back of the substrate.
  • SAW surface acoustic wave
  • the integrated structure of the control circuit and the SAW filter according to the second embodiment of the present invention includes:
  • the surface of the SAW resonator plate is provided with an input electrode and an output electrode, the surface of the SAW resonator plate faces the substrate and is bonded to the substrate and closes the cavity 402;
  • the control circuit is electrically connected to the input electrode and the output electrode.
  • the base includes a substrate and a first dielectric layer 401 formed on the substrate, wherein the substrate is an SOI substrate; the SOI substrate includes an insulating layer 102 and a silicon top layer 103 on the insulating layer 102.
  • the control circuit includes a device structure and a first interconnect structure layer electrically connected to the device structure.
  • the device structure includes a MOS switch including a source 201 and a drain 202 formed in the silicon top layer 103 of the SOI substrate, and a gate dielectric layer 204 and a gate 203 formed on the silicon top layer 103.
  • the first interconnect structure layer is located on the first dielectric layer and is electrically connected to the input electrode and the output electrode; specifically, the first interconnect structure layer includes a first conductive pillar 404 and a first circuit layer 405 that are electrically connected to the device structure in sequence.
  • the cavity 402 is formed in the first dielectric layer 401.
  • the SAW resonator plate includes a piezoelectric substrate 301, a pair of comb electrodes 302 provided on the piezoelectric substrate 301, an input electrode and an output electrode (not shown), the input electrode and the output electrode are respectively connected to the pair of comb electrodes 302 Electrical connection.
  • both the input electrode and the output electrode include solder pads.
  • the integrated structure further includes a first redistribution layer 406 and a first pad 407 formed on the substrate.
  • the first pad 407 is electrically connected to the input electrode and the output electrode to pass the input electrode and the output electrode
  • the first pad 407 and the first redistribution layer 406 are electrically connected to the control circuit.
  • the substrate and the SAW resonator plate are bonded by a ring-shaped adhesive structure 408, which is provided on the first redistribution layer 406 and the outer periphery of the cavity 402.
  • the adhesive structure 408 is a dry film or a chip connection film .
  • the integrated structure further includes an encapsulation layer 403 that covers the substrate and the SAW resonator sheet.
  • the integrated structure further includes a second redistribution layer 503 formed on the back of the substrate, and is electrically connected to the input electrode, the output electrode, and the control circuit.
  • the second redistribution layer 503 is provided on the surface of the insulating layer 102 and is electrically connected to the third conductive pillar 501 penetrating through the substrate and the second circuit layer 502 provided on the surface of the insulating layer, and the third conductive pillar 501 is interconnected with the first
  • the structural layer 405 is electrically connected, and the second redistribution layer 503 further includes an I/O pad 411.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

一种控制电路与表面声波（SAW）滤波器的集成方法和集成结构。该集成方法包括：提供基底，基底形成有控制电路；在基底上形成空腔（402）；提供SAW谐振片，SAW谐振片的表面设有输入电极、输出电极；将SAW谐振片的表面朝向基底，使SAW谐振片键合于基底且封闭空腔（402）；将控制电路与输入电极、输出电极电连接。通过设于基底的控制电路对SAW滤波器进行控制，可避免现有SAW滤波器作为分立器件集成于PCB导致的电连接工艺复杂、插入损耗大等问题。

Description

控制电路与表面声波滤波器的集成方法和集成结构 技术领域
本发明涉及声波滤波器技术领域，特别涉及一种控制电路与表面声波（SAW）滤波器的集成方法和集成结构。
 背景技术
SAW是在压电基片材料表面产生并传播，且振幅随着深入基片材料的深度增加而迅速减少的一种弹性波。SAW滤波器的基本结构是在具有压电特性的基片材料上制作两个声电换能器－梳状电极叉指换能器（Interdigital Transducer，IDT），分别用作发射换能器和接收换能器。SAW滤波器的工作频段一般在800MHz~2GHz，带宽为17MHz~30MHz。由于其选择型好、频带宽、性能稳定、可靠性高，已经成为目前应用最广泛的射频滤波器。
 技术问题
进行封装时，一般将单个的SAW滤波器封装为分立器件，再集成于印刷电路板（PCB）上。出于使用需求，往往需要在一个PCB板上集成多个SAW。这种单独封装再进行系统集成的方式带来SIP接线复杂、插入损耗大等问题，且需要引入分立的开关、选择、控制器件对SAW滤波器进行控制，提高了工艺复杂度和制造成本。
 
 技术解决方案
本发明的目的是提出一种控制电路与表面声波（SAW）滤波器的集成方法和相应的集成结构，以克服现有SAW滤波器封装和集成过程中SIP接线复杂、插入损耗大的问题。
本发明一方面提出一种控制电路与表面声波（SAW）滤波器的集成方法，包括：
提供基底，所述基底形成有控制电路；
在所述基底上形成空腔；
提供SAW谐振片，所述SAW谐振片的表面设有输入电极、输出电极；
将所述SAW谐振片的所述表面朝向所述基底，使所述SAW谐振片键合于所述基底且封闭所述空腔；
将所述控制电路与所述输入电极、输出电极电连接。
可选地，所述基底包括衬底及形成在所述衬底上的第一介质层；
所述在所述基底上形成空腔包括：
在所述第一介质层内形成所述空腔。
可选地，所述衬底包括SOI衬底、硅衬底、锗衬底、锗化硅衬底、砷化镓衬底之一。
可选地，所述控制电路包括器件结构及与所述器件结构电连接的第一互连结构层，所述第一互连结构层位于所述第一介质层，与所述输入电极、输出电极电连接。
可选地，所述器件结构包括MOS器件。
可选地，所述将所述控制电路与所述输入电极、输出电极电连接包括：
在键合所述SAW谐振片之后，将所述第一互连结构层与所述输入电极、输出电极电连接；或者
在键合所述SAW谐振片之前，在所述第一互连结构层上形成第一重布线层及第一焊垫；
在键合所述SAW谐振片后，将所述第一焊垫与所述输入电极、所述输出电极电连接，以使所述输入电极、输出电极通过所述第一焊垫、所述第一重布线层与所述控制电路电连接。
可选地，将所述SAW谐振片的所述表面朝向所述基底，使所述SAW谐振片键合于所述基底且封闭所述空腔的步骤包括：
在所述基底的表面、所述空腔的外周形成粘合结构；
通过所述粘合结构将所述SAW谐振片粘结于所述基底。
可选地，所述粘合结构包括干膜。
可选地，通过曝光显影在所述干膜中形成所述空腔。
可选地，通过丝网印刷图案化的粘结层形成所述粘合结构。
可选地，所述集成方法还包括：在所述基底的背面形成第二重布线层，与所述输入电极、输出电极、控制电路电连接。
可选地，所述第二重布线层包括I/O焊垫。
可选地，在所述键合之后，还包括：
形成封装层，所述封装层覆盖所述基底和所述SAW谐振片。
可选地，所述集成方法还包括：
在所述封装层上形成第三重布线层，与所述输入电极、输出电极、控制电路电连接。
可选地，所述输入电极和输出电极均包括焊垫。
本发明另一方面提出一种控制电路与表面声波（SAW）滤波器的集成结构，包括：
基底，所述基底形成有控制电路，所述基底上形成有空腔；
SAW谐振片，所述SAW谐振片的表面设有输入电极、输出电极，所述SAW谐振片的所述表面朝向所述基底而键合于所述基底且封闭所述空腔；
所述控制电路与所述输入电极、输出电极电连接。
可选地，所述基底包括衬底及形成在所述衬底上的第一介质层；所述空腔形成于所述第一介质层内；
或者，所述基底与所述SAW谐振片通过粘合结构键合，所述空腔形成于所述粘合结构内。
可选地，所述粘合结构为干膜。
可选地，所述衬底包括SOI衬底、硅衬底、锗衬底、锗化硅衬底、砷化镓衬底之一。
可选地，所述控制电路包括器件结构及与所述器件结构电连接的第一互连结构层，所述第一互连结构层位于所述第一介质层，与所述输入电极、输出电极电连接。
可选地，所述器件结构包括MOS器件。
可选地，所述基底上形成有第一重布线层及第一焊垫，所述第一焊垫与所述输入电极、所述输出电极电连接，以使所述输入电极、输出电极通过所述第一焊垫、所述第一重布线层与所述控制电路电连接。
可选地，所述集成结构还包括形成于所述基底的背面的第二重布线层，与所述输入电极、输出电极、控制电路电连接。
可选地，所述第二重布线层包括I/O焊垫。
可选地，所述集成结构还包括封装层，所述封装层覆盖所述基底和所述SAW谐振片。
可选地，所述集成结构还包括形成于所述封装层上的第三重布线层，与所述输入电极、输出电极、控制电路电连接。
可选地，所述输入电极和输出电极均包括焊垫。
 有益效果
本发明的有益效果在于在基底上形成控制电路和SAW滤波器所需要的空腔，再将已有SAW谐振片安装于空腔，实现控制电路对SAW滤波器的控制，从而可以避免现有SAW滤波器作为分立器件集成于PCB导致的电连接工艺复杂、插入损耗大等问题，集成度高、降低工艺成本。
本发明具有其它的特性和优点，这些特性和优点从并入本文中的附图和随后的具体实施方式中将是显而易见的，或者将在并入本文中的附图和随后的具体实施方式中进行详细陈述，这些附图和具体实施方式共同用于解释本发明的特定原理。
 附图说明
通过结合附图对本发明示例性实施例进行更详细的描述，本发明的上述以及其它目的、特征和优势将变得更加明显，其中，在本发明示例性实施例中，相同的附图标记通常代表相同部件。
图1~图7分别显示根据本发明第一实施例的控制电路与表面声波（SAW）滤波器的集成方法的各个流程；
图8~图10分别显示根据本发明第二实施例的控制电路与表面声波（SAW）滤波器的集成方法的进行SAW谐振片的电连接的各个流程。
 
附图标记说明：
101-硅衬底，102-绝缘层，103-硅顶层；201-源极，202-漏极，203-栅极，204-栅介质层；301-压电基片，302-梳状电极；401-第一介质层，402-空腔，403-封装层，404-第一导电柱，405-第一线路层，406-第一重布线层，407-第一焊垫，408-粘合结构，409-第三重布线层，410-第二导电柱，411-I/O焊垫；501-第三导电柱，502-第二线路层，503-第二重布线层。
 本发明的实施方式
下面将参照附图更详细地描述本发明。虽然附图中显示了本发明的优选实施例，然而应该理解，可以以各种形式实现本发明而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了使本发明更加透彻和完整，并且能够将本发明的范围完整地传达给本领域的技术人员。
为了解决现有SAW滤波器的封装集成中接线复杂、插入损耗大等问题，本发明实施例提出一种控制电路与表面声波（SAW）滤波器的集成方法和集成结构。
根据本发明实施例的控制电路与表面声波（SAW）滤波器的集成方法，包括：提供基底，基底形成有控制电路；在基底上形成空腔；提供SAW谐振片，SAW谐振片的表面设有输入电极、输出电极；将SAW谐振片的表面朝向基底，使SAW谐振片键合于基底且封闭空腔；将控制电路与输入电极、输出电极电连接。
根据本发明实施例的集成方法在基底上形成控制电路和SAW滤波器所需要的空腔，再将已有SAW谐振片安装于空腔，实现控制电路对SAW滤波器的控制，从而可以避免现有SAW滤波器作为分立器件集成于PCB导致的电连接工艺复杂、插入损耗大等问题，集成度高、降低工艺成本。
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施例做详细的说明。在详述本发明实施例时，为便于说明，示例图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明的保护范围。此外，在实际制作中应包含长度、宽度及深度的三维空间大小。
图1至图7分别显示根据本发明第一实施例的控制电路与表面声波（SAW）滤波器的集成方法的各个流程，该集成方法包括以下步骤：
S1：参考图1至图4所示，提供基底，基底形成有控制电路。
参考图1和图2所示，在本实施例中，基底包括衬底及形成在衬底上的第一介质层401。可选地，衬底包括SOI衬底、硅衬底、锗衬底、锗化硅衬底、砷化镓衬底之一。本领域技术人员也可以根据基底上形成的控制电路选择衬底的类型。在本实施例中，衬底为SOI衬底。
SOI（Silicon-on-Insulator）即绝缘体上硅，其结构可以是绝缘硅衬底加顶层单晶硅层的双层结构，也可以是以绝缘层为中间层（称为埋层）的三明治结构。在进行器件制作时，仅使用顶层的薄硅层作为器件制作层，形成源极、漏极、沟道区等结构，而硅衬底仅起支撑作用。三明治结构中埋层将器件制作层与硅衬底在电学上隔离开，从而减少硅衬底对器件性能的影响。SOI在器件性能上具有减小寄生电容、降低功耗、消除闩锁效应等优点。目前获得SOI衬底的典型工艺是智能剥离（Smart-cutTM）工艺。本实施例选用SOI衬底以利用SOI的上述优点。
仍然参考图1所示，在本实施例中，SOI衬底包括硅衬底101、位于硅衬底101上的绝缘层102和位于绝缘层102上的硅顶层103，或者SOI衬底可以是绝缘层加顶层硅的双层结构。
仍然参考图2所示，第一介质层401为低K介质材料层，例如氧化硅层。可通过化学气相沉积（CVP）形成第一介质层401，第一介质层401用于形成SAW滤波器工作所必需的空腔402。
在本实施例中，控制电路包括器件结构及与器件结构电连接的第一互连结构层，第一互连结构层位于第一介质层401。器件结构包括MOS器件，例如MOS开关，MOS开关可以是nMOS或者pMOS开关。仍参考图1所示，MOS开关包括源极201、漏极202和栅极203，还包括硅顶层103表面的栅介质层204或栅介质区，以隔离源极、漏极和栅极。可通过浅掺杂源漏极（Low Dose Drain，简称LDD）工艺和源漏极注入（Source/Drain Implantation，简称S/D IMP）在顶层硅中形成源极201和漏极202。
参考图3所示，可选地，第一互连结构层包括依次与器件结构电连接的第一导电柱404和第一线路层405。在本实施例中，首先形成贯穿第一介质层401的第一通孔和设于第一介质层表面的第一沟槽，然后在第一通孔和第一沟槽内填充电连接材料，以形成第一导电柱404和第一线路层405。
可通过刻蚀形成贯穿第一介质层401的第一通孔和设于第一介质层401表面的第一沟槽，第一沟槽定义了局部互连金属的路径，然后通过淀积（例如溅射）在第一通孔和第一沟槽内填充电连接材料，电连接材料优选为铜、钨、钛等。在本实施例中，在硅顶层103上形成了栅介质层204，因此第一通孔还贯穿栅介质层204。
参考图4所示，可选的，在第一互连结构层不适宜直接电连接输入电极、输出电极的情况下，基底上形成有第一重布线层406及第一焊垫407，第一重布线层406与控制电路的第一线路层405电连接。可通过淀积形成第一重布线层406，并类似的通过刻蚀、淀积形成第一焊垫407。
S2：参考图5所示，在基底上形成空腔。
参考图5所示，在本实施例中，通过刻蚀在第一介质层401上形成向内凹陷的空腔402。
仍然参考图5所示，可选地，在基底表面形成粘合结构408，以用于实现后续SAW谐振片与基底的键合。粘合结构408可以是干膜或者其他类型的芯片连接膜。可选地，在基底上形成空腔之前，在加热加压的条件下，在基底表面粘贴一层干膜，然后对干膜进行图形化，再通过对干膜进行曝光显影以及刻蚀第一介质层401在基底上形成向内凹陷的空腔402，保留下来的干膜部分形成粘合结构408。可选地，通过丝网印刷图案化的粘结层形成粘合结构408。粘结层的材料通常采用环氧树脂。通过丝网印刷的方法，可以直接在基底表面形成图案化的粘结层，不需要光刻版、曝光和显影等步骤来实现图案化。
可选地，当基底上形成有第一重布线层406时，在基底上形成空腔之前，在加热加压的条件下，在第一重布线层406表面粘贴一层干膜，然后对干膜进行图形化，再通过对干膜进行曝光显影以及刻蚀第一介质层401在基底上形成向内凹陷的空腔402，保留下来的干膜部分形成粘合结构408。可选地，在空腔402的深度较小时，可以在粘合结构408中形成空腔402。
S3：参考图5所示，提供SAW谐振片，SAW谐振片的表面设有输入电极、输出电极。
参考图5所示，SAW谐振片包括压电基片301、设于压电基片301上的一对梳状电极302、输入电极和输出电极（未示出），输入电极和输出电极分别与一对梳状电极302电连接。可选地，输入电极和输出电极均包括焊垫。一对梳状电极302分别用作发射换能器和接收换能，发射换能器将电信号转换为声表面波，在压电基片301表面上传播，经过一定的延迟后，接收换能器将声波信号转换为电信号输出。滤波过程在电到声和声到电的转换中实现。
S4：参考图5所示，将SAW谐振片的表面朝向基底，使SAW谐振片键合于基底且封闭空腔。
在本实施例中，输入电极和输出电极位于压电基片301的第一表面，键合时，使第一表面朝向空腔402，使SAW谐振片键合于基底且封闭空腔402。
可选地，在基底的表面、空腔402的外周形成有环形的粘合结构408；通过粘合结构408将SAW谐振片的压电基片301粘结于基底，从而使SAW谐振片键合于基底且封闭空腔402。通过粘合结构408可以将压电基片301牢固地固定于基底。
S5：将控制电路与输入电极、输出电极电连接。
在步骤S1中提到，控制电路可以包括器件结构及与器件结构电连接的第一互连结构层，第一互连结构层位于第一介质层401。相应地，将控制电路与输入电极、输出电极电连接即在键合SAW谐振片之后，将第一互连结构层与输入电极、输出电极电连接。
仍然参考图5所示，可选的，基底上可形成有第一重布线层406及第一焊垫407，相应地，将控制电路与输入电极、输出电极电连接包括：
在键合SAW谐振片之前，在第一互连结构层上形成第一重布线层406及第一焊垫407；
在键合SAW谐振片后，将第一焊垫407与输入电极、输出电极电连接，以使输入电极、输出电极通过第一焊垫407、第一重布线层406与控制电路电连接。
通过以上步骤S1至S5实现了控制电路与SAW滤波器的集成。在本实施例中，该集成方法还可以包括以下步骤S6和S7：
S6：参考图6所示，形成封装层403，封装层覆盖基底和SAW谐振片。可以通过塑封（molding）方法形成封装层403，塑封采用的材料可为环氧树脂。
S7：参考图7所示，去除硅衬底101，以减薄集成结构。在本实施例中，可通过化学机械抛光（CMP）去除硅衬底101。
S8：仍然参考图7所示，在封装层403上形成第三重布线层409，与输入电极、输出电极、控制电路电连接。
具体地，形成贯穿封装层403的第二通孔，在第二通孔内填充电连接材料，以形成第二导电柱410，然后在封装层403上形成第三重布线层409，第三重布线层409与第二导电柱410电连接。第三重布线层409还包括I/O焊垫411。类似地，可通过刻蚀形成第二通孔，通过淀积（例如溅射）在第二通孔内填充电连接材料（例如铜），以形成第二导电柱410。I/O焊垫411可连接外部电源。
本实施例获得的集成结构如图7所示。
根据本发明第二实施例的控制电路与SAW滤波器的集成方法也包括前述步骤S1至S7，其与第一实施例的差别在于步骤S8。参考图8至图10所示，根据本发明第二实施例的集成方法包括在步骤S7之后执行以下步骤：
在基底的背面形成第二重布线层，与输入电极、输出电极、控制电路电连接。
具体地，参考图8和图9所示，在图8显示的形成有封装层403且去除了硅衬底101的集成结构中形成贯穿绝缘层102、硅顶层103和第一介质层401的第三通孔，在第三通孔内填充电连接材料，以形成第三导电柱501，第三导电柱501与第一互连结构层405电连接，在绝缘层表面形成第二线路层502，与第三导电柱501电连接；
在绝缘层102表面形成与第二线路层502、第三导电柱501依次电连接的第二重布线层503，第二重布线层503还包括I/O焊垫411。
本发明实施例还提供一种控制电路与表面声波（SAW）滤波器的集成结构，包括：基底，基底形成有控制电路，基底上形成有空腔；SAW谐振片，SAW谐振片的表面设有输入电极、输出电极，SAW谐振片的表面朝向基底而键合于基底且封闭空腔；控制电路与输入电极、输出电极电连接。
根据本发明实施例的集成结构通过形成于基底的控制电路实现对SAW滤波器的控制，从而可以避免现有SAW滤波器作为分立器件集成于PCB导致的电连接工艺复杂、插入损耗大等问题，集成度高、降低工艺成本。
参考图7所示，根据本发明第一实施例的控制电路与SAW滤波器的集成结构包括：
基底，基底形成有控制电路，基底上形成有空腔402；
SAW谐振片，SAW谐振片的表面设有输入电极和输出电极，SAW谐振片的表面朝向基底而键合于基底且封闭空腔402；
控制电路与输入电极和输出电极电连接。
在本实施例中，基底包括衬底及形成在衬底上的第一介质层401，其中衬底为SOI衬底；SOI衬底包括绝缘层102和位于绝缘层102上的硅顶层103。
控制电路包括器件结构及与器件结构电连接的第一互连结构层。器件结构包括MOS开关，MOS开关包括形成于SOI衬底的硅顶层103内的源极201和漏极202，以及形成于硅顶层103上的栅介质层204和栅极203。
第一互连结构层位于第一介质层401，与输入电极和输出电极电连接；具体地，第一互连结构层包括依次与器件结构电连接的第一导电柱404和第一线路层405。空腔402形成于第一介质层401内。
SAW谐振片括压电基片301、设于压电基片301上的一对梳状电极302、输入电极和输出电极，输入电极和输出电极分别与一对梳状电极302电连接。可选地，输入电极和输出电极均包括焊垫。
在本实施例中，集成结构还包括形成于基底上的第一重布线层406及第一焊垫407，第一焊垫407与输入电极、输出电极电连接，以使输入电极、输出电极通过第一焊垫407、第一重布线层406与控制电路电连接。
基底与SAW谐振片通过环形的粘合结构408键合，粘合结构408设于第一重布线层406上、空腔402的外周，可选地，粘合结构408为干膜或者通过丝网印刷形成的粘结层，或者其他芯片连接膜。
在本实施例中，集成结构还包括封装层403，封装层403覆盖基底和SAW谐振片。
在本实施例中，集成结构还包括第三重布线层409，与输入电极、输出电极、控制电路电连接。具体地，第三重布线层409与贯穿封装层403的第二导电柱410电连接，第三重布线层409还包括I/O焊垫411。
参考图10所示，根据本发明第二实施例的控制电路与表面声波（SAW）滤波器的集成结构与第一实施例的区别在于从基底的背面进行外部I/O电连。
参考图10所示，根据本发明第二实施例的控制电路与SAW滤波器的集成结构包括：
基底，基底形成有控制电路，基底上形成有空腔；
SAW谐振片，SAW谐振片的表面设有输入电极和输出电极，SAW谐振片的表面朝向基底而键合于基底且封闭空腔402；
控制电路与输入电极和输出电极电连接。
在本实施例中，基底包括衬底及形成在衬底上的第一介质层401，其中衬底为SOI衬底；SOI衬底包括绝缘层102和位于绝缘层102上的硅顶层103。
控制电路包括器件结构及与器件结构电连接的第一互连结构层。器件结构包括MOS开关，MOS开关包括形成于SOI衬底的硅顶层103内的源极201和漏极202，以及形成于硅顶层103上的栅介质层204和栅极203。
第一互连结构层位于第一介质层，与输入电极和输出电极电连接；具体地，第一互连结构层包括依次与器件结构电连接的第一导电柱404和第一线路层405。空腔402形成于第一介质层401内。
SAW谐振片括压电基片301、设于压电基片301上的一对梳状电极302、输入电极和输出电极（未示出），输入电极和输出电极分别与一对梳状电极302电连接。可选地，输入电极和输出电极均包括焊垫。
在本实施例中，集成结构还包括形成于基底上的第一重布线层406及第一焊垫407，第一焊垫407与输入电极、输出电极电连接，以使输入电极、输出电极通过第一焊垫407、第一重布线层406与控制电路电连接。
基底与SAW谐振片通过环形的粘合结构408键合，粘合结构408设于第一重布线层406上、空腔402的外周，可选地，粘合结构408为干膜或者芯片连接膜。
在本实施例中，集成结构还包括封装层403，封装层403覆盖基底和SAW谐振片。
在本实施例中，集成结构还包括形成于基底的背面的第二重布线层503，与输入电极、输出电极、控制电路电连接。具体地，第二重布线层503设于绝缘层102表面，与贯穿基底的第三导电柱501以及设于绝缘层表面的第二线路层502电连接，第三导电柱501与第一互连结构层405电连接，第二重布线层503还包括I/O焊垫411。
以上已经描述了本发明的各实施例，上述说明是示例性的，并非穷尽性的，并且也不限于所披露的各实施例。在不偏离所说明的各实施例的范围和精神的情况下，对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。

Claims (27)

  1. 一种控制电路与表面声波（SAW）滤波器的集成方法，其特征在于，包括：
    提供基底，所述基底形成有控制电路；
    在所述基底上形成空腔；
    提供SAW谐振片，所述SAW谐振片的表面设有输入电极、输出电极；
    将所述SAW谐振片的所述表面朝向所述基底，使所述SAW谐振片键合于所述基底且封闭所述空腔；
    将所述控制电路与所述输入电极、输出电极电连接。
  2. 根据权利要求1所述的集成方法，其特征在于，所述基底包括衬底及形成在所述衬底上的第一介质层；
    所述在所述基底上形成空腔包括：
    在所述第一介质层内形成所述空腔。
  3. 根据权利要求2所述的集成方法，其特征在于，所述衬底包括SOI衬底、硅衬底、锗衬底、锗化硅衬底、砷化镓衬底之一。
  4. 根据权利要求2所述的集成方法，其特征在于，所述控制电路包括器件结构及与所述器件结构电连接的第一互连结构层，所述第一互连结构层位于所述第一介质层，与所述输入电极、输出电极电连接。
  5. 根据权利要求4所述的集成方法，其特征在于，所述器件结构包括MOS器件。
  6. 根据权利要求4所述的集成方法，其特征在于，所述将所述控制电路与所述输入电极、输出电极电连接包括：
    在键合所述SAW谐振片之后，将所述第一互连结构层与所述输入电极、输出电极电连接；或者
    在键合所述SAW谐振片之前，在所述第一互连结构层上形成第一重布线层及第一焊垫；
    在键合所述SAW谐振片后，将所述第一焊垫与所述输入电极、所述输出电极电连接，以使所述输入电极、输出电极通过所述第一焊垫、所述第一重布线层与所述控制电路电连接。
     
  7. 根据权利要求1所述的集成方法，其特征在于，将所述SAW谐振片的所述表面朝向所述基底，使所述SAW谐振片键合于所述基底且封闭所述空腔的步骤包括：
    在所述基底的表面、所述空腔的外周形成粘合结构；
    通过所述粘合结构将所述SAW谐振片粘结于所述基底。
  8. 根据权利要求7所述的集成方法，其特征在于，所述粘合结构包括干膜。
  9. 根据权利要求8所述的集成方法，其特征在于，通过曝光显影在所述干膜中形成所述空腔。
  10. 根据权利要求7所述的集成方法，其特征在于，通过丝网印刷图案化的粘结层形成所述粘合结构。
  11. 根据权利要求1所述的集成方法，其特征在于，还包括：在所述基底的背面形成第二重布线层，与所述输入电极、输出电极、控制电路电连接。
  12. 根据权利要求11所述的集成方法，其特征在于，所述第二重布线层包括I/O焊垫。
  13. 根据权利要求1所述的集成方法，其特征在于，在所述键合之后，还包括：
    形成封装层，所述封装层覆盖所述基底和所述SAW谐振片。
  14. 根据权利要求13所述的集成方法，其特征在于，还包括：
    在所述封装层上形成第三重布线层，与所述输入电极、输出电极、控制电路电连接。
  15. 根据权利要求1所述的集成方法，其特征在于，所述输入电极和输出电极均包括焊垫。
  16. 一种控制电路与表面声波（SAW）滤波器的集成结构，其特征在于，包括：
    基底，所述基底形成有控制电路，所述基底上形成有空腔；
    SAW谐振片，所述SAW谐振片的表面设有输入电极、输出电极，所述SAW谐振片的所述表面朝向所述基底而键合于所述基底且封闭所述空腔；
    所述控制电路与所述输入电极、输出电极电连接。
  17. 根据权利要求16所述的集成结构，其特征在于，所述基底包括衬底及形成在所述衬底上的第一介质层；所述空腔形成于所述第一介质层内；
    或者，所述基底与所述SAW谐振片通过粘合结构键合，所述空腔形成于所述粘合结构内。
  18. 根据权利要求17所述的集成结构，其特征在于，所述粘合结构为干膜。
  19. 根据权利要求17所述的集成结构，其特征在于，所述衬底包括SOI衬底、硅衬底、锗衬底、锗化硅衬底、砷化镓衬底之一。
  20. 根据权利要求17所述的集成结构，其特征在于，所述控制电路包括器件结构及与所述器件结构电连接的第一互连结构层，所述第一互连结构层位于所述第一介质层，与所述输入电极、输出电极电连接。
  21. 根据权利要求20所述的集成结构，其特征在于，所述器件结构包括MOS器件。
  22. 根据权利要求20所述的集成结构，其特征在于，所述基底上形成有第一重布线层及第一焊垫，所述第一焊垫与所述输入电极、所述输出电极电连接，以使所述输入电极、输出电极通过所述第一焊垫、所述第一重布线层与所述控制电路电连接。
  23. 23、根据权利要求16所述的集成结构，其特征在于，还包括形成于所述基底的背面的第二重布线层，与所述输入电极、输出电极、控制电路电连接。
  24. 根据权利要求23所述的集成结构，其特征在于，所述第二重布线层包括I/O焊垫。
  25. 根据权利要求16所述的集成结构，其特征在于，还包括封装层，所述封装层覆盖所述基底和所述SAW谐振片。
  26. 根据权利要求25所述的集成结构，其特征在于，还包括形成于所述封装层上的第三重布线层，与所述输入电极、输出电极、控制电路电连接。
  27. 根据权利要求16所述的集成结构，其特征在于，所述输入电极和输出电极均包括焊垫。
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Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010001293A1 (en) * 1998-02-27 2001-05-17 Tdk Corporation Chip device and method for producing the same
CN1346539A (zh) * 1999-03-30 2002-04-24 因芬尼昂技术股份公司 部件
CN1599060A (zh) * 2003-09-18 2005-03-23 立朗科技股份有限公司 具有空腔的封装构造
CN205945672U (zh) * 2016-07-27 2017-02-08 扬州大学 一种集成声表面波滤波器组件的芯片内连封装结构
CN106888001A (zh) * 2017-03-08 2017-06-23 宜确半导体（苏州）有限公司 声波设备及其晶圆级封装方法
CN107342746A (zh) * 2017-06-27 2017-11-10 华进半导体封装先导技术研发中心有限公司 声表面波器件的晶圆级扇出型封装结构及其制造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63115412A (ja) * 1986-10-31 1988-05-20 Fujitsu Ltd 弾性表面波素子の実装方法
JPH0590883A (ja) * 1991-09-28 1993-04-09 Murata Mfg Co Ltd 弾性表面波装置の製造方法及び弾性表面波装置
DE69718693T2 (de) * 1996-03-08 2003-11-27 Matsushita Electric Ind Co Ltd Elektronisches Bauteil und Herstellungsverfahren
JPH10163801A (ja) * 1996-11-26 1998-06-19 Matsushita Electric Ind Co Ltd 弾性表面波素子およびその製造方法
JP3395747B2 (ja) * 2000-01-11 2003-04-14 日本電気株式会社 半導体集積回路の製造方法
EP1734654A4 (en) * 2004-04-08 2009-12-23 Murata Manufacturing Co SURFACE WAVE FILTER AND MANUFACTURING METHOD THEREFOR
JP5113394B2 (ja) * 2007-01-23 2013-01-09 太陽誘電株式会社 弾性波デバイス
US8900931B2 (en) * 2007-12-26 2014-12-02 Skyworks Solutions, Inc. In-situ cavity integrated circuit package
JP2011159882A (ja) * 2010-02-02 2011-08-18 Fujikura Ltd 半導体装置及びその製造方法
JP5735099B2 (ja) * 2011-04-01 2015-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法ならびに携帯電話機
US8910355B2 (en) * 2011-12-12 2014-12-16 International Business Machines Corporation Method of manufacturing a film bulk acoustic resonator with a loading element
WO2015159465A1 (ja) * 2014-04-14 2015-10-22 株式会社村田製作所 電子部品及びその製造方法
CN107004641B (zh) * 2014-11-28 2020-05-19 京瓷株式会社 Saw器件以及saw器件的制造方法
US10541713B2 (en) * 2015-06-29 2020-01-21 Skyworks Solutions, Inc. Multiplexers having hybrid circuits with resonators
WO2017204347A1 (ja) * 2016-05-27 2017-11-30 株式会社村田製作所 高周波フィルタ装置、及び、通信装置
US20170345676A1 (en) * 2016-05-31 2017-11-30 Skyworks Solutions, Inc. Wafer level packaging using a transferable structure
US10333493B2 (en) * 2016-08-25 2019-06-25 General Electric Company Embedded RF filter package structure and method of manufacturing thereof
WO2018079485A1 (ja) * 2016-10-25 2018-05-03 株式会社村田製作所 弾性波装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010001293A1 (en) * 1998-02-27 2001-05-17 Tdk Corporation Chip device and method for producing the same
CN1346539A (zh) * 1999-03-30 2002-04-24 因芬尼昂技术股份公司 部件
CN1599060A (zh) * 2003-09-18 2005-03-23 立朗科技股份有限公司 具有空腔的封装构造
CN205945672U (zh) * 2016-07-27 2017-02-08 扬州大学 一种集成声表面波滤波器组件的芯片内连封装结构
CN106888001A (zh) * 2017-03-08 2017-06-23 宜确半导体（苏州）有限公司 声波设备及其晶圆级封装方法
CN107342746A (zh) * 2017-06-27 2017-11-10 华进半导体封装先导技术研发中心有限公司 声表面波器件的晶圆级扇出型封装结构及其制造方法

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