CN106888001A - 声波设备及其晶圆级封装方法 - Google Patents
声波设备及其晶圆级封装方法 Download PDFInfo
- Publication number
- CN106888001A CN106888001A CN201710132926.XA CN201710132926A CN106888001A CN 106888001 A CN106888001 A CN 106888001A CN 201710132926 A CN201710132926 A CN 201710132926A CN 106888001 A CN106888001 A CN 106888001A
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- acoustic wave
- substrate
- wave device
- pin pad
- cavity
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Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 161
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000010897 surface acoustic wave method Methods 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 7
- 239000011358 absorbing material Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710132926.XA CN106888001B (zh) | 2017-03-08 | 2017-03-08 | 声波设备及其晶圆级封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710132926.XA CN106888001B (zh) | 2017-03-08 | 2017-03-08 | 声波设备及其晶圆级封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106888001A true CN106888001A (zh) | 2017-06-23 |
CN106888001B CN106888001B (zh) | 2020-07-17 |
Family
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Family Applications (1)
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CN201710132926.XA Active CN106888001B (zh) | 2017-03-08 | 2017-03-08 | 声波设备及其晶圆级封装方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109728792A (zh) * | 2019-01-04 | 2019-05-07 | 宜确半导体(苏州)有限公司 | 声学设备及其封装方法 |
CN110729979A (zh) * | 2019-09-30 | 2020-01-24 | 中国电子科技集团公司第二十六研究所 | 一种薄膜体声波滤波器晶圆级封装方法及其结构 |
CN111200410A (zh) * | 2018-11-16 | 2020-05-26 | 开元通信技术(厦门)有限公司 | 一种声波器件晶圆级封装结构及其制备方法 |
CN111326482A (zh) * | 2018-12-13 | 2020-06-23 | 中芯集成电路(宁波)有限公司 | 表面声波器件的封装结构及其晶圆级封装方法 |
WO2020134666A1 (zh) * | 2018-12-26 | 2020-07-02 | 中芯集成电路(宁波)有限公司上海分公司 | 控制电路与表面声波滤波器的集成方法和集成结构 |
CN111416592A (zh) * | 2019-01-04 | 2020-07-14 | 宜确半导体(苏州)有限公司 | 半导体器件、射频电路装置和制造方法 |
CN112802803A (zh) * | 2021-02-01 | 2021-05-14 | 阿尔伯达(上海)科技有限公司 | 一种高良率晶圆级滤波器芯片封装结构及方法 |
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JPH11274875A (ja) * | 1998-03-26 | 1999-10-08 | Japan Radio Co Ltd | Sawデバイス及びその製造方法 |
WO2004044980A2 (de) * | 2002-11-14 | 2004-05-27 | Epcos Ag | Bauelement mit hermetischer verkapselung und waferscale verfahren zur herstellung |
CN201887726U (zh) * | 2010-01-04 | 2011-06-29 | 姚一滨 | 多元联排复合基板、频率器件组以及频率器件 |
CN102111116A (zh) * | 2010-11-24 | 2011-06-29 | 张�浩 | 整合的晶圆级别封装体 |
US20130230643A1 (en) * | 2010-10-13 | 2013-09-05 | Rf Micro Devices, Inc. | Atomic layer deposition encapsulation for acoustic wave devices |
CN204031091U (zh) * | 2014-07-28 | 2014-12-17 | 广东惠伦晶体科技股份有限公司 | 一种玻璃封装的石英晶体谐振器 |
CN105293420A (zh) * | 2015-10-30 | 2016-02-03 | 北京时代民芯科技有限公司 | 一种mems圆片级真空封装结构及其制作方法 |
CN105897209A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 金属圆片级凹槽型表面声滤波芯片封装结构及其制造方法 |
CN105897210A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 凹槽型表面声滤波芯片封装结构及其制造方法 |
CN105897218A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 凹槽埋孔型表面声滤波芯片封装结构及其制造方法 |
JP2016181879A (ja) * | 2015-03-25 | 2016-10-13 | 京セラクリスタルデバイス株式会社 | 圧電デバイスの製造方法 |
-
2017
- 2017-03-08 CN CN201710132926.XA patent/CN106888001B/zh active Active
Patent Citations (11)
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JPH11274875A (ja) * | 1998-03-26 | 1999-10-08 | Japan Radio Co Ltd | Sawデバイス及びその製造方法 |
WO2004044980A2 (de) * | 2002-11-14 | 2004-05-27 | Epcos Ag | Bauelement mit hermetischer verkapselung und waferscale verfahren zur herstellung |
CN201887726U (zh) * | 2010-01-04 | 2011-06-29 | 姚一滨 | 多元联排复合基板、频率器件组以及频率器件 |
US20130230643A1 (en) * | 2010-10-13 | 2013-09-05 | Rf Micro Devices, Inc. | Atomic layer deposition encapsulation for acoustic wave devices |
CN102111116A (zh) * | 2010-11-24 | 2011-06-29 | 张�浩 | 整合的晶圆级别封装体 |
CN204031091U (zh) * | 2014-07-28 | 2014-12-17 | 广东惠伦晶体科技股份有限公司 | 一种玻璃封装的石英晶体谐振器 |
JP2016181879A (ja) * | 2015-03-25 | 2016-10-13 | 京セラクリスタルデバイス株式会社 | 圧電デバイスの製造方法 |
CN105293420A (zh) * | 2015-10-30 | 2016-02-03 | 北京时代民芯科技有限公司 | 一种mems圆片级真空封装结构及其制作方法 |
CN105897209A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 金属圆片级凹槽型表面声滤波芯片封装结构及其制造方法 |
CN105897210A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 凹槽型表面声滤波芯片封装结构及其制造方法 |
CN105897218A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 凹槽埋孔型表面声滤波芯片封装结构及其制造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111200410A (zh) * | 2018-11-16 | 2020-05-26 | 开元通信技术(厦门)有限公司 | 一种声波器件晶圆级封装结构及其制备方法 |
CN111200410B (zh) * | 2018-11-16 | 2023-03-21 | 开元通信技术(厦门)有限公司 | 一种声波器件晶圆级封装结构及其制备方法 |
CN111326482A (zh) * | 2018-12-13 | 2020-06-23 | 中芯集成电路(宁波)有限公司 | 表面声波器件的封装结构及其晶圆级封装方法 |
WO2020134666A1 (zh) * | 2018-12-26 | 2020-07-02 | 中芯集成电路(宁波)有限公司上海分公司 | 控制电路与表面声波滤波器的集成方法和集成结构 |
CN109728792A (zh) * | 2019-01-04 | 2019-05-07 | 宜确半导体(苏州)有限公司 | 声学设备及其封装方法 |
CN111416592A (zh) * | 2019-01-04 | 2020-07-14 | 宜确半导体(苏州)有限公司 | 半导体器件、射频电路装置和制造方法 |
CN109728792B (zh) * | 2019-01-04 | 2023-09-12 | 宜确半导体(苏州)有限公司 | 声学设备及其封装方法 |
CN111416592B (zh) * | 2019-01-04 | 2023-09-26 | 宜确半导体(苏州)有限公司 | 半导体器件、射频电路装置和制造方法 |
CN110729979A (zh) * | 2019-09-30 | 2020-01-24 | 中国电子科技集团公司第二十六研究所 | 一种薄膜体声波滤波器晶圆级封装方法及其结构 |
CN110729979B (zh) * | 2019-09-30 | 2022-09-09 | 中国电子科技集团公司第二十六研究所 | 一种薄膜体声波滤波器晶圆级封装方法及其结构 |
CN112802803A (zh) * | 2021-02-01 | 2021-05-14 | 阿尔伯达(上海)科技有限公司 | 一种高良率晶圆级滤波器芯片封装结构及方法 |
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