WO2020111257A1 - Carte de circuit imprimé, boîtier pour montage de parties électroniques et dispositif électronique - Google Patents

Carte de circuit imprimé, boîtier pour montage de parties électroniques et dispositif électronique Download PDF

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Publication number
WO2020111257A1
WO2020111257A1 PCT/JP2019/046868 JP2019046868W WO2020111257A1 WO 2020111257 A1 WO2020111257 A1 WO 2020111257A1 JP 2019046868 W JP2019046868 W JP 2019046868W WO 2020111257 A1 WO2020111257 A1 WO 2020111257A1
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WO
WIPO (PCT)
Prior art keywords
region
wiring board
connection region
length
comb
Prior art date
Application number
PCT/JP2019/046868
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English (en)
Japanese (ja)
Inventor
白崎　隆行
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2020557873A priority Critical patent/JP7119119B2/ja
Priority to CN201980078222.6A priority patent/CN113169130B/zh
Publication of WO2020111257A1 publication Critical patent/WO2020111257A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 

Definitions

  • the present disclosure relates to a wiring board, an electronic component mounting package, and an electronic device.
  • a modulation method is applied to an optical waveguide in order to perform high-speed and large-capacity communication.
  • An electrode for applying a DC bias for modulation has a comb-shaped structure (see Patent Document 1).
  • a wiring board of the present disclosure includes a dielectric board having a first surface, A pair of differential signal transmission lines that are located on the first surface of the dielectric substrate and perform differential signal transmission;
  • the pair of differential signal transmission lines includes a first transmission line having a first end and a second end, and a second transmission line having a third end and a fourth end,
  • the second end portion has a first connection region and a comb-teeth-shaped first region adjacent to the first connection region,
  • the fourth end portion is located opposite to the first connection region and is adjacent to the second connection region and a second connection region that is connected to the first connection region via an electronic component, and is adjacent to the second connection region.
  • a comb-teeth-shaped second region facing one region, The first region and the second region are located in mesh with each other with a space therebetween.
  • the electronic component mounting package of the present disclosure includes the wiring board described above, A substrate having a second surface, A pedestal protruding from the second surface of the base, The wiring board is arranged on the pedestal.
  • the electronic component mounting package of the present disclosure includes the wiring board described above, A substrate having a second surface, A heat sink located on the second surface of the substrate, The wiring board is arranged on the heat sink.
  • An electronic device includes the above electronic component mounting package, And an electronic component mounted on the wiring board.
  • FIG. 3 is a perspective view of an electronic component mounting package and an electronic device. It is a perspective view of a structure provided with a lid. It is a graph which shows a simulation result. It is a graph which shows a simulation result.
  • the wiring board 1 includes a dielectric substrate 2, a pair of differential signal transmission lines 3 and 4, a first ground wiring 5, and a second ground wiring 6. And a third ground wiring 7.
  • the dielectric substrate 2 is a substrate made of a dielectric material. On the first surface 2a of the dielectric substrate 2, a pair of differential signal transmission lines 3 and 4, a first ground wiring 5, a second ground wiring 6 and a third ground wiring 7 are provided.
  • the dielectric substrate 2 of the present embodiment has, for example, a rectangular plate shape.
  • the dielectric material include a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body or a silicon nitride sintered body, or a glass ceramic. Materials can be used.
  • the pair of differential signal transmission lines 3 and 4 are provided on the first surface 2a of the dielectric substrate 2 and transmit differential signals.
  • the pair of differential signal transmission lines 3 and 4 includes a first transmission line 3 and a second transmission line 4, and a differential signal is transmitted through each. That is, the high frequency signal transmitted through the first transmission line 3 and the high frequency signal transmitted through the second transmission line 4 have opposite phases.
  • the first transmission line 3 has a first end 3a on one end side and a second end 3b on the other end side
  • the second transmission line 4 has one end. It has a third end 4a on the part side and a fourth end 4b on the other end side.
  • the first end portion 3a of the first transmission line 3 is located on one side (S1) side of the two opposite sides of the first surface 2a of the dielectric substrate 2, and the second transmission The third end 4a of the line 4 is located on the other side (S2) of the two opposite sides of the first surface 2a of the dielectric substrate 2.
  • the first transmission line 3 and the second transmission line 4 extend toward the center side of the first surface 2a of the dielectric substrate 2, respectively, and the second end 3b of the first transmission line 3 and the fourth end of the second transmission line 4 are formed.
  • the end 4b faces.
  • a first ground wiring 5 is provided along one side of the first transmission line 3 and a second ground wiring 6 along one side of the second transmission line 4. Is provided. Further, the third ground wiring 7 is provided along the other side of the first transmission line 3 and the other side of the second transmission line 4.
  • the first ground wiring 5 and the second ground wiring 6 reach one side (S3) of the other two facing sides of the first surface 2a of the dielectric substrate 2.
  • the third ground wiring 7 reaches one side (S4) of the other two sides of the first surface 2a of the dielectric substrate 2 which face each other.
  • the second end portion 3b and the fourth end portion 4b have a first connection region 30 and a second connection region 40, which are connected to each other via a semiconductor element (electronic component) described later.
  • the first connection region 30 and the second connection region 40 are located opposite to each other.
  • the connection region 30 of the second end 3b and the connection region 40 of the fourth end 4b may not be directly connected, but may be electrically connected via a semiconductor element therebetween. For example, when the semiconductor element has two connection terminals, one connection terminal is connected to the connection region 30 and the other terminal is connected to the connection region 40.
  • the second end 3 b has a first comb tooth region (first region) 31 adjacent to the connection region 30.
  • the first region 31 is a comb-shaped region facing the fourth end 4b of the second transmission line 4.
  • the first region 31 is a region including a plurality of comb teeth 31a.
  • the fourth end portion 4 b has a second comb tooth region (second region) 41 adjacent to the connection region 40.
  • the second region 41 is a region facing the second end 3b of the first transmission line 3, and is a comb-teeth-shaped region that is meshed with the first region 31 with a gap.
  • the second region 41 is a region including a plurality of comb teeth 41a.
  • connection regions 30 and 40 adjacent to the first region 31 and the second region 41 are connected via a semiconductor element, and the connection member such as a wire connecting the connection regions 30 and 40 and the semiconductor element is a reactance element. It becomes a component (L component). In this region, the characteristic impedance increases due to the increase of the reactance component.
  • the transmission lines such as the first transmission line 3 and the second transmission line 4 are designed so that the characteristic impedance is constant in the state where the semiconductor element is not connected. However, by connecting the semiconductor elements, the characteristic impedance locally increases, and the characteristic impedance mismatching deteriorates the transmission characteristic of the high-frequency signal.
  • the first region 31 and the second region 41 are provided so as to be meshed with each other with a constant space therebetween, and the capacitance component (C component) due to capacitive coupling is compared to other regions of the transmission line. ) Increases.
  • the increase of the C component due to the first region 31 and the second region 41 can reduce the characteristic impedance mismatch due to the connection of the semiconductor elements and reduce the deterioration of the transmission characteristic of the high frequency signal.
  • a fixed space is provided between the first area 31 and the second area 41 for electrical insulation.
  • the comb teeth 31a of the first region 31 and the comb teeth 41a of the second region 41 are the same in the meshed portions, that is, in the tooth portions adjacent to the surface direction of the first surface 2a (the direction along S1). It has become a length.
  • the comb teeth 31a in the first region 31 have the same length
  • the comb teeth 41a in the second region 41 also have the same length.
  • the shorter the length of the comb teeth the better the transmission characteristics in the high frequency band.
  • the transmission characteristic in a specific frequency region can be improved.
  • the length of the comb teeth is, for example, in the present embodiment, the dimension of the comb teeth in the direction along S3. That is, as shown in FIG. 1, the comb teeth 31a of the first region 31 are, in other words, a portion that is elongated and protrudes from S1 to S2. Therefore, the dimension of this protruding portion may be the length L31a of the comb teeth 31a of the first region 31.
  • the length L41a of the comb teeth 41a of the second region 41 may be defined similarly.
  • the first region 31 has the comb teeth 31as located closest to S4.
  • the comb teeth 31as include the other side of the first transmission line 3, and the length L31as of the comb teeth 31as is shorter than the length L31a of the comb teeth 31a.
  • the distance between the first connection area 30 and the second connection area is constant, but the distance may change.
  • the distance between the first connection region 30 and the second connection region can be set as appropriate according to the type and characteristics of the intervening electronic components.
  • the distance between the first region 31 and the second region 41 and the semiconductor element that is, the distance D1 between the first region 31 and the connection region 30 and the distance D2 between the second region 41 and the connection region 40 are the shorter ones. can do. That is, the distances D1 and D2 may be reduced.
  • the distances D1 and D2 may be ⁇ /4 or less, and further may be ⁇ /8. In this case, reflection of high frequency signals in the transmission line can be further reduced.
  • the length of the comb teeth may be ⁇ /4 or less, and may be ⁇ /8. In this case, reflection of high frequency signals in the transmission line can be further reduced.
  • the second embodiment is the same as the wiring board 1 of the first embodiment except that the configurations of the first region 31 and the second region 41 are different from those of the first embodiment. And the description is omitted.
  • the comb teeth 31a of the first comb teeth 31 and the comb teeth 41a of the second region 41 have the same comb teeth length, but in the present embodiment, as shown in FIG. , The lengths are different. As described above, by changing the comb tooth length in the first region 31 and the second region 41 depending on the relationship between the comb tooth length and the frequency of the transmission signal, the transmission characteristic in a wider band is improved. Is possible.
  • the length of the second comb tooth on the side closer to the connection region 30 is longer than the length of the first comb tooth on the side far from the connection region 30.
  • the length of the fourth comb tooth on the side closer to the connection region 40 is longer than the length of the third comb tooth on the side far from the connection region 40.
  • the comb teeth 31a of the first region 31 and the comb teeth 41a of the second region 41 are, for example, three or more, the comb teeth closest to the connection regions 30 and 40 and the comb teeth farthest from each other have the above-described relationship.
  • the comb teeth located between them may have the same length as any of these comb teeth, or may have a different length. In the case of different lengths, the length may be between the lengths of these comb teeth.
  • the comb tooth length Ls3 on the side S3 side and the comb tooth length on the side S4 side are provided.
  • the comb tooth length L described above may be, for example, the longer one of the lengths Ls3 and Ls4.
  • the third embodiment is the same as the wiring board 1 of the first embodiment except that the configurations of the first region 31 and the second region 41 are different from those of the first embodiment. And the description is omitted.
  • the tips of the comb teeth 31a and 41a in the first region 31 and the second region 41 are semicircular or R-shaped. In the present embodiment, as shown in FIG. 4, the tips of the comb teeth are semicircular. With such a tip shape, the distances from the center of the comb teeth to the contour line are equal at the tips of the comb teeth. For example, if the tip has a rectangular shape, the distance from the center of the comb teeth to the outline is longer in the corner portion than in other portions.
  • the distances from the center of the comb teeth to the outline are equal. Further, in the case of the R shape in which the corners of the tips of the comb teeth are rounded, the difference in distance is smaller than that in the rectangular shape.
  • the characteristic impedance may be mismatched locally and the transmission characteristics may deteriorate.
  • the tips of the comb teeth 31a and 41a are semicircular or rounded, it is possible to reduce the local mismatch of the characteristic impedances and the deterioration of the transmission characteristics.
  • the tip shape of the comb teeth may be a semi-circular shape or a rounded corner shape of at least one of the comb teeth 31a and 41a of the first area 31 and the second area 41. May have the shape, and the tips of all the comb teeth may have the shape.
  • the tip shape of the comb teeth shown in this embodiment can be applied not only to the first embodiment but also to the second embodiment.
  • Each of the pair of differential signal transmission lines 3 and 4, the first ground wiring 5, the second ground wiring 6 and the third ground wiring 7 is made of a metal material such as gold, silver, copper, nickel, tungsten, molybdenum and manganese. Consists of.
  • Each wiring may be formed by co-firing or metal-plating the surface layer of the dielectric substrate 2 in the form of a metallized layer, a plated layer, or the like.
  • each wiring is manufactured by processing a wire material of a metal material into a predetermined shape, and is connected to a plating layer provided on the surface layer of the dielectric substrate 2 through a bonding material such as a brazing material. Good.
  • each wiring is not limited to, for example, a metal material that can be co-fired with the dielectric substrate 2, but a metal alloy made of iron, nickel, cobalt, chromium, or the like is processed into a predetermined wiring shape, and What was joined to the plating layer provided in the surface layer with the brazing material can also be used.
  • the dielectric substrate 2 is made of, for example, an aluminum oxide sintered body, it can be manufactured as follows. First, raw material powders such as aluminum oxide and silicon oxide are molded into a sheet shape together with an appropriate organic binder and an organic solvent to produce a plurality of rectangular green sheet-shaped ceramic green sheets. Next, these ceramic green sheets are laminated to produce a laminated body. After that, the dielectric substrate 2 can be manufactured by firing this laminate at a temperature of 1300 to 1600°C. It should be noted that the ceramic green sheet does not necessarily have to be laminated in a plurality of layers, and may have only one layer as long as there is no problem in terms of mechanical strength as the dielectric substrate 2.
  • each wiring contains, for example, tungsten, and can be manufactured as follows.
  • a method such as a screen printing method is used so that a metal paste prepared by mixing tungsten powder with an organic solvent and an organic binder is formed into a predetermined pattern on the surface (main surface) of the ceramic green sheet to be the dielectric substrate 2.
  • the electronic component mounting package 10 includes the wiring board 1 and is a package for mounting an electronic component 21 such as an optical semiconductor element.
  • the electronic device 100 is a semiconductor device that receives and transmits an optical signal using an optical communication device, and includes an electronic component mounting package 10 and an electronic component 21 mounted on the electronic component mounting package 10. It
  • the electronic component mounting package 10 includes a plate-shaped base body 11, a pedestal 12 protruding from the second surface 11a on one side in the thickness direction of the base body 11, and a wiring located on the second surface 11a side of the base body 11.
  • substrate 1 and the heat sink 14 in which the wiring board 1 is located in the surface 14a are provided.
  • the base body 11 is plate-shaped and has a second surface 11a on one side in the thickness direction. Further, it has a through hole 11b penetrating in the thickness direction.
  • the base 11 has a function of dissipating the heat generated by the mounted electronic component 21 to the outside of the electronic component mounting package 10 and is electrically connected to an external ground wiring (reference potential wiring) to form an electronic component. It also has a function as a ground conductor of the mounting package 10.
  • the base 11 is made of a metal material having good thermal conductivity.
  • the metal material for example, a material having a thermal expansion coefficient close to that of the electronic component 21 mounted on the electronic device 100 or the connection board 16 made of ceramics or a material having a low cost, for example, Fe—Ni—Co alloy or Fe—Mn alloy is used. Metals such as iron-based alloys and pure iron are selected. More specifically, there is an SPC (Steel Plate Cold) material of Fe 99.6 mass%-Mn 0.4 mass% system.
  • the base 11 is made of SPC material
  • the ingot (lump) is manufactured into a predetermined shape by subjecting the ingot to a known metal working method such as rolling or punching.
  • the through hole 11b is formed by, for example, drilling.
  • the shape of the base 11 is, for example, a flat plate having a thickness of 0.5 to 2 mm, and the shape is not particularly limited.
  • the base 11 has, for example, a disk shape with a diameter of 3 to 10 mm, a semi-disk shape with a part of the circumference having a radius of 1.5 to 8 mm cut out, and a square plate shape with a side of 3 to 15 mm.
  • the thickness of the base 11 does not have to be uniform. For example, if the thickness of the outer side of the base 11 is increased, it becomes easier to closely adhere a heat sink such as a housing that houses the electronic device 100. Thereby, the heat generated from the electronic component 21 can be more easily released to the outside via the base 11.
  • a Ni layer having excellent corrosion resistance and excellent wettability with a bonding material (brazing material) for bonding and fixing the electronic component 21, the connection substrate 16 or a lid body described later is formed on the second surface 11a of the substrate 11. It is preferable that the Au layer and the Au layer are sequentially deposited by a plating method. As a result, it is possible to effectively prevent the base body 11 from being oxidized and corroded, and it is possible to braze (join) the lid and the like to the base body 11 well.
  • the Ni layer may have a thickness of 0.5 to 9 ⁇ m, and the Au layer may have a thickness of 0.5 to 5 ⁇ m.
  • the pedestal 12 is provided on the second surface 11a of the base 11 so as to project from the second surface 11a.
  • the pedestal 12 may be formed integrally with the base 11, or may be joined to the second surface 11 a of the base 11.
  • the pedestal 12 may be formed of the same metal material as the base body 11, or may be a different material as long as it has electrical conductivity.
  • the pedestal 12 may have any shape as long as it has a surface on which the connection board 16 can be arranged, and may have, for example, a rectangular parallelepiped shape or a prismatic shape.
  • the pedestal 12 is electrically connected to the base 11, and the pedestal 12 also functions as a ground conductor like the base 11.
  • the pedestal 12 may include a first pedestal portion 120 and a second pedestal portion 121 that are located apart from each other in a direction parallel to the second surface 11a.
  • the first pedestal portion 120 and the second pedestal portion 121 may have the same shape or different shapes. Further, it may include three or more pedestal portions.
  • the above-mentioned wiring board 1 is arranged on the surface 14a of the heat sink 14, and the electronic component 21 which is a semiconductor element is mounted thereon.
  • the differential signal transmission lines 3 and 4 and the electronic component 21 may be electrically connected by a bonding wire, and terminals provided on the electronic component 21 and the differential signal transmission lines 3 and 4 may be soldered or the like. It may be a bump connection or the like that is directly joined by.
  • the bonding wire is a wire member provided between the electronic component 21 and the differential signal transmission lines 3 and 4 by a known wire bonding method.
  • As the bonding wire for example, a gold wire, an aluminum wire or the like can be used.
  • connection terminals are provided on the upper and lower sides, respectively. By mounting the electronic component 21 in the connection region 40 of the second transmission line 4, the connection terminal below the electronic component 21 and the second transmission line 4 are electrically connected. The connection terminal on the upper part of the electronic component 21 and the connection region 30 of the first transmission line 3 are electrically connected by the bonding wire 22.
  • the heat sink 14 is a heat transfer member on the surface 14a of which the wiring board 1 is located.
  • a high frequency signal is supplied to the electronic component 21 mounted on the wiring board 1 to operate, Joule heat is generated.
  • the electronic component 21 is, for example, a light emitting element or the like, the amount of light emission is reduced by its own heat generation, and the life of the electronic component 21 is shortened due to deterioration of the element.
  • Part of the heat generated by the electronic component 21 is dissipated and part of the heat flows to the wiring board 1.
  • the electronic component 21 can be easily cooled.
  • the heat sink 14 is made of a metal material having good thermal conductivity, and for example, copper or aluminum can be used.
  • the heat sink 14 may have a shape having the surface 14a on which the wiring board 1 is located. By making the surface 14a the same size as or larger than the size of the wiring board 1, the heat transfer area with the wiring board 1 can be increased.
  • the heat sink 14 of the present embodiment has a rectangular parallelepiped shape having the surface 14a having such a size.
  • the heat sink 14 may be arranged so as to be in contact with the base 11, or a thermoelectric element such as a Peltier may be interposed between the base 11 and the heat sink 14. This makes it easier to dissipate the heat generated in the electronic component 21.
  • connection terminal 18 is formed in a rod shape and is inserted into the through hole 11b so that the one end portion 18a is exposed on the second surface 11a side of the base 11. A portion of the through hole 11b other than the connection terminal 18 is filled with an insulating material and the connection terminal 18 is fixed.
  • the insulating material is, for example, an insulating inorganic dielectric material such as glass or ceramics. Any insulating material may be used as long as it can secure the insulating space between the connection terminal 18 and the base body 11 and fix the connection terminal 18 in the through hole 11b.
  • connection terminal 18 is a terminal for electrically connecting the electronic component mounting package 10 to an external board or the like.
  • the connection terminal 18 is electrically connected to the wiring board 1, and a high-frequency signal (differential signal) supplied from the outside is transmitted to the wiring board 1.
  • the connection terminal 18 may be directly connected to the wiring board 1, or the connection terminal 18 and the wiring board 1 may be connected via the connection board 16 as in the present embodiment.
  • the connection board 16 Similar to the wiring board 1, the connection board 16 has a configuration in which a wiring conductor including a signal line conductor is formed on an insulating substrate.
  • the one end portion 18a of the connection terminal 18 and the signal line conductor of the connection board 16 are electrically connected, and the signal line conductor of the connection board 16 and the differential signal transmission lines 3 and 4 of the wiring board 1 are electrically connected.
  • the electronic component mounting package 10 and the electronic device 100 further include a lid 50 that covers the second surface 11a side of the base 11. After the electronic components are mounted, the lid body 50 seals and protects the second surface 11a side of the base body 11.
  • the electronic components 21 mounted on the electronic device 100 include optical semiconductor elements such as LDs (laser diodes) and PDs (photodiodes), semiconductor elements including semiconductor integrated circuit elements, crystal oscillators, surface acoustic wave elements, and the like. Piezoelectric elements, pressure sensor elements, capacitance elements, resistors, and the like.
  • the lid 50 has an outer shape along the outer peripheral region of the base 11, and has a space for covering the electronic component 21, the wiring board 1, the pedestal 12, the heat sink 14, the connection board 16, and the like on the second surface 11 a of the base 11. It is of a shape.
  • the electronic component 21 is an optical semiconductor element such as an LD (laser diode) or PD (photodiode)
  • a window member 50a for transmitting light may be provided in a portion of the lid body facing the electronic component 21.
  • an optical fiber and an optical isolator for preventing return light may be joined.
  • the lid 50 is made of a metal such as an Fe—Ni—Co alloy, an Fe—Ni alloy, or an Fe—Mn alloy, and is manufactured by subjecting these plate materials to a well-known metal working method such as pressing or punching. ..
  • the lid 50 may have a coefficient of thermal expansion similar to that of the material of the base 11. Further, the lid 50 may use the same material as the material of the base 11.
  • a flat or lens-shaped window member 50a made of glass may be joined to a member having a hole in a portion facing the electronic component 21 by a low melting point glass or the like. ..
  • the electronic component mounting package 10 using the circular base 11 has been described as an example, but a box-shaped electronic component mounting package may be used.
  • the wiring board 1 of the first embodiment shown in FIG. 1 is modeled, and the same wiring board as the first embodiment is modeled as a conventional configuration except that the first region 31 and the second region 41 are not provided for comparison.
  • the comb tooth length is changed to 0.08 mm, 0.18 mm, and 0.28 mm.
  • the thickness of the dielectric substrate 1 is 0.2 mm
  • the materials of the first transmission line 3 and the second transmission line 4 are The calculation was performed by using as money.
  • FIG. 7A and 7B are graphs showing simulation results.
  • FIG. 7A shows reflection loss
  • FIG. 7B shows transmission loss. Both the reflection loss and the transmission loss of the wiring board 1 of this embodiment showed better results than the wiring board of the conventional configuration.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

Une carte de circuit imprimé 1 selon la présente invention comprend un substrat diélectrique 2 et une paire de lignes de transmission de signaux différentiels 3, 4. La paire de lignes de transmission de signaux différentiels 3, 4 comprend une première ligne de transmission 3 et une seconde ligne de transmission 4. La première ligne de transmission 3 a une première extrémité 3a et une deuxième extrémité 3b, et la deuxième ligne de transmission 4 présente une troisième extrémité 4a et une quatrième extrémité 4b. La deuxième extrémité 3b a une première région de connexion 30 et une première région en forme de dents de peigne adjacente 31. La quatrième extrémité 4b comporte une seconde région de connexion 40 qui est située à l'opposé de la première région de connexion 30 et est reliée à la première région de connexion 30 par l'intermédiaire d'une partie électronique, et une seconde région adjacente 41. La première région 31 et la seconde région 41 sont espacées et engrenées l'une avec l'autre.
PCT/JP2019/046868 2018-11-30 2019-11-29 Carte de circuit imprimé, boîtier pour montage de parties électroniques et dispositif électronique WO2020111257A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020557873A JP7119119B2 (ja) 2018-11-30 2019-11-29 配線基板、電子部品搭載用パッケージおよび電子装置
CN201980078222.6A CN113169130B (zh) 2018-11-30 2019-11-29 布线基板、电子部件搭载用封装件以及电子装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-225148 2018-11-30
JP2018225148 2018-11-30

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Publication Number Publication Date
WO2020111257A1 true WO2020111257A1 (fr) 2020-06-04

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PCT/JP2019/046868 WO2020111257A1 (fr) 2018-11-30 2019-11-29 Carte de circuit imprimé, boîtier pour montage de parties électroniques et dispositif électronique

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JP (1) JP7119119B2 (fr)
CN (1) CN113169130B (fr)
WO (1) WO2020111257A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114142335A (zh) * 2020-09-03 2022-03-04 肖特股份有限公司 用于电子元件的接头
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JP2022043008A (ja) * 2020-09-03 2022-03-15 ショット アクチエンゲゼルシャフト 電子部品用のヘッダ
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