WO2020098094A1 - 一种制备高纯碳化硅粉料的方法 - Google Patents

一种制备高纯碳化硅粉料的方法 Download PDF

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WO2020098094A1
WO2020098094A1 PCT/CN2018/123715 CN2018123715W WO2020098094A1 WO 2020098094 A1 WO2020098094 A1 WO 2020098094A1 CN 2018123715 W CN2018123715 W CN 2018123715W WO 2020098094 A1 WO2020098094 A1 WO 2020098094A1
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silicon carbide
purity silicon
purity
temperature
carbide powder
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PCT/CN2018/123715
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French (fr)
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靳婉琪
布乐琴科耶夫亨
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山东天岳先进材料科技有限公司
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Publication of WO2020098094A1 publication Critical patent/WO2020098094A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

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  • the invention relates to the technical field of crystal material preparation, in particular to a high-purity silicon carbide powder and a preparation method thereof.
  • silicon carbide single crystal is widely used in civilian lighting and screens due to its advantages of wide band gap, strong voltage breakdown resistance, high thermal conductivity, and high saturation electron migration rate. Display, aerospace, high temperature radiation environment, petroleum exploration, radar communication and automotive electronics. Silicon carbide single crystal is usually prepared from silicon carbide powder by sublimation method, so the purity, particle size and crystal type of silicon carbide powder used in sublimation method have a significant impact on the quality of silicon carbide single crystal.
  • the most commonly used synthesis method of SiC powder in production is the self-propagating high-temperature synthesis method, which is to heat high-purity carbon powder and silicon powder in an intermediate frequency electromagnetic induction furnace to above 2000 °C in an argon or helium atmosphere (or argon Under the mixed atmosphere of gas and helium), silicon carbide powder is synthesized.
  • silicon carbide powder is synthesized.
  • the amount of silicon carbide powder required for a single furnace for ingot growth increases, the diameter of the graphite crucible used to produce silicon carbide powder increases, and the crucible wall and crucible during the reaction The temperature difference at the center increases.
  • the temperature of the crucible wall is often too high, resulting in the carbonization of the synthetic material near the crucible wall, resulting in a decrease in yield and an increase in production costs, and the resulting silicon carbide The free carbon content in the powder increases.
  • CN103508454B discloses a method for synthesizing silicon carbide raw materials three times, firstly synthesizing silicon carbide powder at high temperature, crushing and passing through oxygen and calcining at 800-1200 ° C at high temperature, then degassing the calcined silicon carbide powder at high temperature in vacuum, and finally High-purity silicon carbide powder can be obtained by hydrometallurgy.
  • CN101659412A discloses a method for purifying existing silicon carbide raw materials, removing impurities by water washing, alkali washing and acid washing, and then calcining at 1600 to 1800 ° C for 3 to 5 minutes to remove free carbon, and finally obtaining high purity of 99.99% purity Raw material of silicon carbide.
  • CN102674357A discloses a synthesis method of high-purity silicon carbide raw material for silicon carbide single crystal growth, pretreatment process: put high-purity Si powder and high-purity C powder in a crucible, and then put it in a heating furnace to heat The growth chamber of the furnace was evacuated to 1 ⁇ 10 -3 Pa or lower, and the temperature was increased to 600 ⁇ 1300 °C.
  • CN102701208A discloses a high-temperature solid-phase synthesis method of high-purity silicon carbide powder, high-vacuum heat treatment process: place high-purity Si and C powder in a crucible, and then place it in a heating furnace to pump the growth chamber of the heating furnace Vacuum to 9 ⁇ 10 -4 Pa or less, and at the same time raise the temperature to 600 to 1300 ° C and hold for more than 2 hours (vacuum degassing treatment, including carbon powder, silicon powder and crucible).
  • CN105417541A discloses a method for preparing high-purity silicon carbide powder.
  • the mixed raw materials are placed in a high-purity graphite crucible, and the graphite crucible is placed in an intermediate-frequency induction heating furnace; when heating is not started, a high Pure H 2 to 800 mbar, then maintain the pressure at 800 mbar, and keep H 2 continuously charged for 1 hour; evacuate the equipment so that the vacuum reaches 5 ⁇ 10 -6 mbar, then slowly increase the temperature to slightly below 1000 °C, stay for a certain time , So that the vacuum reaches 5 ⁇ 10 -6 mbar again.
  • CN101302011A discloses a method for artificially synthesizing high-purity silicon carbide powder for semiconductor single crystal growth. The obtained Si powder and C powder are mixed uniformly and then placed in a crucible.
  • CN103708463A discloses a method for preparing kilogram-grade high-purity silicon carbide powder, (1) coating a graphite crucible with a carbon film; (2) coating a carbon crucible with a silicon carbide.
  • the method for purifying silicon carbide powder disclosed in the above-mentioned existing patent documents purifies silicon carbide powder after synthesizing the raw material of silicon carbide, and calcinates at 800 ° C or higher to remove free carbon by oxygen, and then hydrometallurgical process Remove metal impurities.
  • the above-mentioned existing process improves the purity of the powder, the process is cumbersome, and the hydrometallurgical process is polluted, which increases the production cost.
  • the silicon carbide powder is easily dried after the hydrometallurgical process is dried, which is not conducive to crystal growth If the agglomerated silicon carbide powder is crushed by a crushing process, new impurities are easily introduced.
  • the above-mentioned existing patent documents disclose that the high-purity carbon powder and the high-purity silicon powder are pre-treated before the synthesis reaction.
  • the pre-treatment method is to purify the carbon powder and the silicon powder at the same time.
  • the side reaction makes the purification not thorough enough, which will ultimately affect the purity of the silicon carbide powder.
  • the present invention provides a method for preparing high-purity silicon carbide powder.
  • the preparation method includes the following steps: (1) selecting high-purity silicon powder and high-purity Carbon powder; (2) Primary purification and secondary purification of high-purity carbon powder, graphite crucible and thermal insulation structure, in which primary purification uses vacuum degassing purification, secondary purification uses high temperature purification under inert gas; (3) The high-purity carbon powder obtained in the second purification in step (2) and the high-purity silicon powder in step (1) are placed in the graphite crucible obtained in the second purification in step (2), and a high-purity silicon carbide powder is obtained by the reaction.
  • the preparation method has simple procedures, environmental protection, low energy consumption, and high purity of the obtained silicon carbide powder.
  • the present invention provides a method for preparing high-purity silicon carbide powder, which includes the following steps: (1) selecting high-purity silicon powder and high-purity carbon powder; (2) for high-purity carbon powder, Graphite crucible and heat preservation structure are subjected to primary purification and secondary purification. Among them, primary purification uses vacuum degassing purification, secondary purification uses high temperature purification under inert gas; (3) High purity carbon obtained by secondary purification in step (2) The powder and the high-purity silicon powder in step (1) are placed in the graphite crucible obtained in the second purification in step (2), and the reaction obtains high-purity silicon carbide powder.
  • the present invention only purifies high-purity carbon powder, graphite crucibles and thermal insulation structures for the following reasons: First, the melting and sublimation temperature of silicon powder is much lower than that of carbon powder, and the silicon powder will liquefy or even vaporize at the same processing temperature, causing losses; Secondly, since the graphite crucible and the insulation structure are made of graphite, if the graphite crucible is used to purify the silicon powder, the silicon powder can react with the graphite crucible, causing erosion. If low temperature is used to purify silicon powder, firstly the nitrogen adsorbed on the silicon powder has a low temperature and the degree of desorption is low.
  • the reason why the present invention purifies high-purity carbon powder, graphite crucible and heat preservation structure twice is as follows:
  • the main purpose of vacuum degassing purification is to remove nitrogen and some metal impurities adsorbed by the crucible, and make it adsorb to carbon powder through high-temperature vacuum 1.
  • the nitrogen in the crucible is desorbed, and at the same time, some metal impurities are volatilized by high temperature vacuum conditions.
  • the main purpose of high temperature purification under inert gas is to remove the nitrogen in the insulation. Due to the material nature of the insulation, the outside temperature is lower than the crucible temperature. Therefore, the temperature must be increased by increasing the crucible heating temperature to perform nitrogen desorption.
  • the purpose of introducing helium or / and argon is to better replace the nitrogen in the carbon powder, crucible and heat preservation, and further reduce the nitrogen content.
  • step (1) the molar ratio of the high-purity silicon powder to the high-purity carbon powder is 0.9-1.2.
  • step (3) a step of performing low-temperature oxygen calcination on the high-purity silicon carbide powder is further included.
  • step (2) the specific operation of the vacuum degassing and purification is as follows: the high-purity carbon powder is placed in a graphite crucible, and the graphite crucible and the heat preservation structure are degassed and purified under elevated temperature.
  • the temperature is raised to 1000-1500 ° C and degassed and purified for 5-20h.
  • the temperature is raised to 1200-1400 ° C, and degassed and purified for 8-15 hours. More preferably, the temperature is raised to 1300 ° C, and degassed and purified for 10 hours.
  • step (2) the specific operation of the high-temperature purification under the inert gas is as follows: inert gas is introduced into the graphite crucible and the heat preservation structure, and the temperature is slowly raised to 1800-2300 ° C for purification to obtain low nitrogen content and low High-purity carbon powder with metallic impurities, graphite crucible and thermal insulation structure.
  • the time for slowly purifying to 1800-2300 ° C for purification is 5-50h.
  • the time for purifying slowly to 1900-2200 ° C for purification is 10-40h. More preferably, the time for slowly purifying to 2100 ° C for purification is 30h.
  • the inert gas is selected from argon and / or helium.
  • the specific operation of the step (3) is as follows: the high-purity carbon powder obtained by the second purification in the step (2) and the high-purity silicon powder in the step (1) are mixed and placed in the second step (2) After purifying the obtained graphite crucible, the graphite crucible is heated under vacuum to perform a synthesis reaction; after the synthesis reaction, an inert gas is introduced, and the conversion reaction is slowly heated to obtain a high-purity silicon carbide powder.
  • the temperature of the synthesis reaction is 1000-1500 ° C, and the time of the synthesis reaction is 5-15h.
  • the temperature of the synthesis reaction is 1200-1400 ° C, and the time of the synthesis reaction is 8-12h. More preferably, the temperature of the synthesis reaction is 1300 ° C., and the time of the synthesis reaction is 10 h.
  • the temperature of the conversion reaction is 1800-2300 ° C, and the time of the conversion reaction is 5-50 h.
  • the temperature of the conversion reaction is 1900-2200 ° C, and the time of the conversion reaction is 15-30 h. More preferably, the temperature of the conversion reaction is 2100 ° C, and the time of the conversion reaction is 25h;
  • the inert gas is selected from argon and / or helium.
  • the low-temperature oxygen-permeable calcination is oxygen permeation calcination at 500-1000 ° C. for more than 3 hours.
  • the low temperature oxygen calcination is oxygen calcination at 800 ° C for 10 hours.
  • the present invention also provides a high-purity silicon carbide powder, which is prepared by the above method for preparing high-purity silicon carbide powder.
  • the present invention reduces the nitrogen content and metal impurity content of high-purity carbon powder through pretreatment. Compared with synthesizing silicon carbide and then performing hydrometallurgical treatment, it is more environmentally friendly and the process is simpler.
  • the present invention purifies high-purity carbon powder while purifying the graphite crucible and the insulation structure without batch purification, so as to achieve the purpose of energy saving and consumption reduction, and at the same time ensure that the silicon carbide powder will not be removed from the graphite crucible and insulation
  • the introduction of impurities in the structure improves the purity of the synthetic silicon carbide powder.
  • the present invention uses low-temperature oxygen-permeable calcination to remove excess free carbon, which is more energy-saving and can reduce the number of carbon inclusions and microtube content in the growth of silicon carbide single crystals.
  • a method for preparing high-purity silicon carbide powder includes the following specific steps:
  • step (3) At the temperature mentioned in step (2), inert gas is injected into the heating furnace, and the temperature is slowly raised to 1800 ° C to carry out purification again.
  • the purification time is 20 hours to obtain carbon powder with low nitrogen content and low metal impurity content.
  • step (3) Mix the high-purity carbon powder in step (3) with the high-purity silicon powder in step (1) uniformly, and place it in the purified graphite crucible in step (3). Put the graphite crucible in step (3) )
  • the heat preservation structure is placed in a heating furnace, and the heating furnace is evacuated to a vacuum degree of 1x10 -4 mbar, and the temperature is raised to 1000 ° C for a synthesis reaction, and the reaction lasts for 10 hours;
  • step (4) Inject inert gas to 800 mbar at the temperature described in step (4), slowly increase the temperature to 1800 ° C to carry out the conversion reaction for 30 hours, to obtain silicon carbide powder;
  • step (5) The silicon carbide powder described in step (5) is calcined with oxygen at 600 ° C. for more than 3 hours to remove excess free carbon, thereby obtaining purified high-purity silicon carbide powder.
  • a method for preparing high-purity silicon carbide powder includes the following specific steps:
  • step (3) At the temperature mentioned in step (2), inert gas is injected into the heating furnace, and the temperature is slowly raised to 2300 ° C to carry out purification again.
  • the purification time is 15 hours to obtain carbon powder with low nitrogen content and low metal impurity content and Graphite crucible and insulation structure;
  • step (3) Mix the high-purity carbon powder in step (3) with the high-purity silicon powder in step (1) uniformly, and place it in the purified graphite crucible in step (3). Put the graphite crucible in step (3) )
  • the heat preservation structure is placed in a heating furnace, the heating furnace is evacuated to a vacuum degree of 1x10 -4 mbar, and the temperature is raised to 1500 °C for a synthesis reaction, and the reaction lasts 9h;
  • step (4) Inject inert gas to 1000 mbar at the temperature described in step (4), slowly increase the temperature to 2300 ° C to carry out the conversion reaction for 20 hours, to obtain silicon carbide powder;
  • step (5) The silicon carbide powder described in step (5) is calcined with oxygen at 800 ° C for more than 3 hours to remove excess free carbon to obtain purified high-purity silicon carbide powder.
  • a method for preparing high-purity silicon carbide powder includes the following specific steps:
  • step (3) At the temperature mentioned in step (2), inert gas is injected into the heating furnace, and the temperature is slowly raised to 1900 ° C to carry out purification again.
  • the purification time is 15 hours to obtain carbon powder with low nitrogen content and low metal impurity content.
  • step (3) Mix the high-purity carbon powder in step (3) with the high-purity silicon powder in step (1) uniformly, and place it in the purified graphite crucible in step (3). Put the graphite crucible in step (3) )
  • the heat preservation structure is placed in a heating furnace, the heating furnace is evacuated to a vacuum degree of 1x10 -4 mbar, and the temperature is raised to 1100 ° C for a synthesis reaction, and the reaction lasts for 12h;
  • step (4) Inject an inert gas to 900 mbar at the temperature described in step (4), and slowly increase the temperature to 2100 ° C to carry out the conversion reaction for 30 hours to obtain silicon carbide powder;
  • step (5) The silicon carbide powder described in step (5) is calcined with oxygen at 700 ° C for more than 3 hours to remove excess free carbon to obtain purified high-purity silicon carbide powder.
  • a method for preparing high-purity silicon carbide powder includes the following specific steps:
  • step (3) At the temperature mentioned in step (2), inert gas is injected into the heating furnace, and the temperature is slowly raised to 2200 ° C to carry out purification again.
  • the purification time is 15 hours to obtain carbon powder with low nitrogen content and low metal impurity content and Graphite crucible and insulation structure;
  • step (3) Mix the high-purity carbon powder in step (3) with the high-purity silicon powder in step (1) uniformly, and place it in the purified graphite crucible in step (3). Put the graphite crucible in step (3) )
  • the heat preservation structure is placed in a heating furnace, the heating furnace is evacuated to a vacuum degree of 1x10 -4 mbar, and the temperature is raised to 1200 ° C to carry out a synthesis reaction, and the reaction lasts for 15h;
  • step (4) Inject inert gas to 1000 mbar at the temperature described in step (4), slowly increase the temperature to 2200 ° C to carry out the conversion reaction for 10 hours, to obtain silicon carbide powder;
  • step (5) The silicon carbide powder described in step (5) is calcined with oxygen at 700 ° C for more than 3 hours to remove excess free carbon to obtain purified high-purity silicon carbide powder.
  • a method for preparing high-purity silicon carbide powder includes the following specific steps:
  • step (3) At the temperature mentioned in step (2), inert gas is injected into the heating furnace, and the temperature is slowly raised to 2200 ° C to carry out purification again.
  • the purification time is 20 hours to obtain carbon powder with low nitrogen content and low metal impurity content.
  • step (3) Mix the high-purity carbon powder in step (3) with the high-purity silicon powder in step (1) uniformly, and place it in the purified graphite crucible in step (3). Put the graphite crucible in step (3) )
  • the heat preservation structure is placed in a heating furnace, the heating furnace is evacuated to a vacuum degree of 1x10 -4 mbar, and the temperature is raised to 1500 °C for a synthesis reaction, and the reaction lasts for 10 hours;
  • step (4) Inject inert gas to 1000 mbar at the temperature described in step (4), slowly increase the temperature to 2300 ° C to carry out the conversion reaction for 20 hours, to obtain silicon carbide powder;
  • step (5) The silicon carbide powder described in step (5) is calcined with oxygen at 600 ° C for more than 3 hours to remove excess free carbon to obtain purified high-purity silicon carbide powder.
  • the impurity content of the silicon carbide prepared by the general method and the method of the present invention is detected, and the detection method uses GDMS (Glow Discharge Mass Spectrometry).
  • the test data is shown in Table 1.
  • Table 1 The impurity content of silicon carbide prepared by the common method and the method of the present invention
  • the impurity content of the silicon carbide prepared by the method of the present invention is lower, only 1.78ppm, which is much lower than the impurity content of the silicon carbide prepared by the ordinary method of 21.29ppm .
  • the content of each impurity of silicon carbide produced by the method of the present invention is also lower than the content of corresponding impurities of silicon carbide produced by the ordinary method.
  • the nitrogen content of impurities is qualitatively determined by the color of the obtained silicon carbide.
  • the color of the silicon carbide prepared by the method of the present invention is light yellow-white, and the color of the silicon carbide prepared by the ordinary method is greenish or grayish.
  • the silicon carbide produced by the inventive method has a lower nitrogen content.

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Abstract

本发明提出了一种制备高纯碳化硅粉料及其制备方法，属于晶体材料领域。本发明的制备高纯碳化硅粉料的方法包括：(1)选择高纯硅粉和高纯碳粉；(2)对高纯碳粉、石墨坩埚和保温结构进行一次提纯和二次提纯，其中，一次提纯采用真空脱气提纯，二次提纯采用惰性气体下的高温提纯；(3)将步骤(2)二次提纯得到的高纯碳粉和步骤(1)中的高纯硅粉置于步骤(2)二次提纯得到的石墨坩埚中，反应得到高纯碳化硅粉料。本发明通过对碳粉和石墨坩埚及保温结构进行预处理降低了高纯碳粉的含氮量与金属杂质含量，相比合成碳化硅后再进行湿法冶金处理，更为环保，且工序更简单，同时保证了合成碳化硅粉料时不会从石墨坩埚及保温结构中引入杂质。

Description

一种制备高纯碳化硅粉料的方法 技术领域
本发明涉及晶体材料制备技术领域，尤其涉及一种高纯碳化硅粉料及其制备方法。
背景技术
作为最重要的第三代半导体材料之一，碳化硅单晶因其宽带隙、抗电压击穿能力强、热导率高、饱和电子迁移速率高等优点，而被广泛应用于民用灯光照明、屏幕显示、航空航天、高温辐射环境、石油勘探、雷达通信与汽车电子化等领域。碳化硅单晶通常通过升华法由碳化硅粉料制备而成，因此升华法所使用的碳化硅粉料的纯度、粒度以及晶型均对碳化硅单晶质量有着显著影响。
目前生产中最常用的SiC粉料合成方法为自蔓延高温合成法，是在中频电磁感应炉中将高纯的碳粉和硅粉加热到2000℃以上，在氩气或氦气气氛(或氩气与氦气的混合气氛)下合成碳化硅粉料。但是随着碳化硅衬底直径的增加，晶锭生长单炉所需的碳化硅粉料量随之增加，所使用的生产碳化硅粉料的石墨坩埚直径增大，反应过程中坩埚壁与坩埚中心的温差增大，为确保高温自蔓延反应的顺利进行，往往出现坩埚壁温度过高，导致坩埚壁附近的合成料碳化，从而导致产率的下降与生产成本的提高，并使所得碳化硅粉料中游离碳含量增加。
对于如何提高合成碳化硅粉料的纯度，技术人员越来越重视，也进行了相关研究。CN103508454B公开了三次合成碳化硅原料的方法，先在高温下合成碳化硅粉料，压碎后通氧气在800～1200℃下高温煅烧，再将煅烧后的碳化硅粉料高温真空脱气，最后经湿法冶金治得高纯碳化硅粉料。CN101659412A公开了对已有碳化硅原料进行提纯的方法，经水洗、碱洗、酸洗去除杂质，再经1600～1800℃高温煅烧3～5分钟去除游离碳， 最终得到纯度达99.99％的高纯碳化硅原料。CN102674357A公开了一种用于碳化硅单晶生长的高纯碳化硅原料的合成方法，预处理工序：将高纯Si粉和高纯C粉放入坩埚中，然后置于加热炉中，对加热炉的生长室抽高真空至1×10 ‐3Pa以下，同时将温度升高至600～1300℃。CN102701208A公开了一种高纯碳化硅粉体的高温固相合成方法，高真空热处理工序：将高纯Si和C粉放入坩埚中，然后置于加热炉中，对加热炉的生长室抽高真空至9×10 -4Pa以下，同时将温度升高至600～1300℃，保持2小时以上(真空脱气处理，包括碳粉、硅粉和坩埚)。CN105417541A公开了一种高纯碳化硅粉料的制备方法，将混合好的原料置于高纯石墨坩埚中，将石墨坩埚置于中频感应加热炉中；在未开始加热时往炉腔中注入高纯H 2至800mbar，然后保持压力800mbar，并保持H 2持续充入1小时；将设备抽真空，使得真空度达到5×10 -6mbar，随后缓慢升温至略低于1000℃，停留一定时间，使得真空度再次达到5×10 -6mbar。CN101302011A公开了一种用于半导体单晶生长的高纯碳化硅粉的人工合成方法，将所取Si粉和C粉混合均匀后放入坩埚中，将坩埚置于中频感应加热炉中，对生长室抽真空，将温度升高至1000℃。CN103708463A公开了一种公斤级高纯碳化硅粉的制备方法，(1)将石墨坩埚镀碳膜；(2)将镀过碳膜的石墨坩埚镀碳化硅。
上述现有专利文献中公开了的纯化碳化硅粉料的方法，在合成碳化硅原料后再对碳化硅粉料进行纯化，在800℃以上高温通氧煅烧去除游离碳，再通过湿法冶金工艺去除金属杂质。上述现有工艺虽然提高了粉料的纯度，但工序繁琐，且湿法冶金工艺污染大，增加了生产成本，同时碳化硅粉料经湿法冶金工艺再干燥后易板结，不利于晶体生长，如使用粉碎工艺对结块的碳化硅粉料进行粉碎，又易引入新杂质。
上述现有专利文献中公开了在高纯碳粉和高纯硅粉进行合成反应前 先进行预处理，预处理方法是将碳粉和硅粉同时进行提纯处理，在提纯过程中可能会引起部分副反应，使得纯化不够彻底，最终会影响碳化硅粉料的纯度。
发明内容
本发明针对现有技术合成的碳化硅粉料纯度不高的问题，提供了一种高纯碳化硅粉料制备方法，所述制备方法包括以下步骤：(1)选择高纯硅粉和高纯碳粉；(2)对高纯碳粉、石墨坩埚和保温结构进行一次提纯和二次提纯，其中，一次提纯采用真空脱气提纯，二次提纯采用惰性气体下的高温提纯；(3)将步骤(2)二次提纯得到的高纯碳粉和步骤(1)中的高纯硅粉置于步骤(2)二次提纯得到的石墨坩埚中，反应得到高纯碳化硅粉料。该制备方法的工序简单、环保、能耗低，且所得碳化硅粉料的纯度高。
一方面，本发明提供了一种制备高纯碳化硅粉料的方法，所述制备方法包括以下步骤：(1)选择高纯硅粉和高纯碳粉；(2)对高纯碳粉、石墨坩埚和保温结构进行一次提纯和二次提纯，其中，一次提纯采用真空脱气提纯，二次提纯采用惰性气体下的高温提纯；(3)将步骤(2)二次提纯得到的高纯碳粉和步骤(1)中的高纯硅粉置于步骤(2)二次提纯得到的石墨坩埚中，反应得到高纯碳化硅粉料。
本发明仅对高纯碳粉、石墨坩埚和保温结构进行提纯处理，其原因如下：首先硅粉融化升华的温度远低于碳粉，相同处理温度下硅粉会液化甚至气化，造成损失；其次，由于石墨坩埚及保温结构均为石墨材质，如果用石墨坩埚对硅粉进行提纯，硅粉可与石墨坩埚进行反应，造成侵蚀。而如果使用低温对硅粉进行提纯，首先硅粉上吸附的氮气由于温度低，脱附程度低，当使用这些硅粉高温制备碳化硅粉料时，其中吸附的氮气仍会在高温时脱附；其次低温脱附无法使部分金属杂质升华挥发， 达不到提纯目的。
本发明之所以对高纯碳粉、石墨坩埚和保温结构进行两次提纯，其具体原因如下：真空脱气提纯主要目的是去除坩埚吸附的氮气及部分金属杂质，通过高温真空使吸附在碳粉、坩埚中的氮气脱附，同时通过高温真空条件使部分金属杂质挥发。采用惰性气体下的高温提纯的主要目的是去除保温中的氮气，由于保温本身的材料性质，其外侧温度要比坩埚温度低，因此必须通过提高坩埚加热温度时保温升温，从而进行氮气脱附。同时，通入氦气或/和氩气目的是更好的置换出碳粉、坩埚及保温中的氮，进一步降低氮含量。
进一步的，步骤(1)中所述高纯硅粉和所述高纯碳粉的摩尔比为0.9‐1.2。
进一步的，步骤(3)之后，还包括对高纯碳化硅粉料进行低温通氧煅烧的步骤。
进一步的，步骤(2)中，所述真空脱气提纯的具体操作如下：将所述高纯碳粉置于石墨坩埚中，将石墨坩埚和保温结构在真空条件下，升温脱气提纯。
更进一步的，升温至1000‐1500℃，脱气提纯5-20h。优选的，升温至1200‐1400℃，脱气提纯8-15h。更优选的，升温至1300℃，脱气提纯10h。
进一步的，步骤(2)中，所述惰性气体下的高温提纯的具体操作如下：向石墨坩埚和保温结构中通入惰性气体，缓慢升温至1800‐2300℃进行提纯，得到低氮含量和低金属杂质含量的高纯碳粉、石墨坩埚和保温结构。
更进一步的，所述缓慢升温至1800‐2300℃进行提纯的时间为5‐50h。优选的，所述缓慢升温至1900‐2200℃进行提纯的时间为10‐40h。更优选 的，所述缓慢升温至2100℃进行提纯的时间为30h。
更进一步的，所述惰性气体选自氩气和/或氦气。
进一步的，所述步骤(3)的具体操作如下：将步骤(2)二次提纯得到的高纯碳粉和步骤(1)中的高纯硅粉混匀，置于步骤(2)二次提纯得到的石墨坩埚中，之后，将石墨坩埚在真空条件下加热进行合成反应；合成反应之后，通入惰性气体，缓慢升温进行转化反应得到高纯碳化硅粉料。
更进一步的，所述合成反应的温度为1000‐1500℃，合成反应的时间为5‐15h。优选的，所述合成反应的温度为1200‐1400℃，合成反应的时间为8‐12h。更优选的，所述合成反应的温度为1300℃，合成反应的时间为10h。
更进一步的，所述转化反应的温度为1800‐2300℃，转化反应的时间为5-50h。优选的，所述转化反应的温度为1900‐2200℃，转化反应的时间为15-30h。更优选的，所述转化反应的温度为2100℃，转化反应的时间为25h；
更进一步的，所述惰性气体选自氩气和/或氦气。
进一步的，所述低温通氧煅烧为在500‐1000℃下通氧气煅烧3h以上。优选的，所述低温通氧煅烧为在800℃下通氧气煅烧10h。
另一方面，本发明还提供了一种高纯碳化硅粉料，其由上述制备高纯碳化硅粉料的方法制备得到的。
本发明具有如下有益效果：
1.本发明在合成碳化硅前，通过预处理降低了高纯碳粉的含氮量与金属杂质含量，相比合成碳化硅后再进行湿法冶金处理，更为环保，且工序更简单。
2.本发明对高纯碳粉提纯的同时对石墨坩埚及保温结构进行提纯，不用分批提纯，从而达到节能降耗的目的，同时保证了合成碳化硅粉料时不会从石墨坩埚及保温结构中引入杂质，提高了合成碳化硅粉料的纯度。
3.本发明采用低温通氧煅烧除去多余的游离碳，更加节能，可以降低碳化硅单晶生长中的碳包裹体数量及微管含量。
具体实施方式
为了更清楚的阐释本发明的整体构思，下面结合以下具体实施例进行详细说明，但不限制本发明的保护范围。
实施例1
制备高纯碳化硅粉料的方法，所述制备方法包括以下具体步骤：
(1)提供高纯硅粉和高纯碳粉，高纯硅粉和高纯碳粉的摩尔比为0.9；
(2)将所述高纯碳粉置于石墨坩埚中，再将石墨坩埚与保温结构置于加热炉中，对加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1000℃进行脱气提纯，持续8h；
(3)在步骤(2)所述温度下，向所述加热炉中注入惰性气体，缓慢升温至1800℃再次进行提纯，提纯时间为20h，得到低氮含量和低金属杂质含量的碳粉和石墨坩埚及保温结构；
(4)将步骤(3)所述高纯碳粉与步骤(1)所述高纯硅粉混合均匀，置于步骤(3)所述提纯后的石墨坩埚中，将石墨坩埚与步骤(3)所述保温结构置于加热炉中，将加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1000℃进行合成反应，反应持续10h；
(5)在步骤(4)所述温度下注入惰性气体至800mbar，缓慢升温至1800℃进行转化反应30h，得到碳化硅粉料；
(6)将步骤(5)所述碳化硅粉料在600℃下通氧气煅烧3h以上， 除去多余的游离碳，得到提纯后的高纯碳化硅粉料。
实施例2
制备高纯碳化硅粉料的方法，所述制备方法包括以下具体步骤：
(1)提供高纯硅粉和高纯碳粉，高纯硅粉和高纯碳粉的摩尔比为1.2；
(2)将所述高纯碳粉置于石墨坩埚中，再将石墨坩埚与保温结构置于加热炉中，对加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1500℃进行脱气提纯，持续6h；
(3)在步骤(2)所述温度下，向所述加热炉中注入惰性气体，缓慢升温至2300℃再次进行提纯，提纯时间为15h，得到低氮含量和低金属杂质含量的碳粉和石墨坩埚及保温结构；
(4)将步骤(3)所述高纯碳粉与步骤(1)所述高纯硅粉混合均匀，置于步骤(3)所述提纯后的石墨坩埚中，将石墨坩埚与步骤(3)所述保温结构置于加热炉中，将加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1500℃进行合成反应，反应持续9h；
(5)在步骤(4)所述温度下注入惰性气体至1000mbar，缓慢升温至2300℃进行转化反应20h，得到碳化硅粉料；
(6)将步骤(5)所述碳化硅粉料在800℃下通氧气煅烧3h以上，除去多余的游离碳，得到提纯后的高纯碳化硅粉料。
实施例3
制备高纯碳化硅粉料的方法，所述制备方法包括以下具体步骤：
(1)提供高纯硅粉和高纯碳粉，高纯硅粉和高纯碳粉的摩尔比为1.1；
(2)将所述高纯碳粉置于石墨坩埚中，再将石墨坩埚与保温结构置于加热炉中，对加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1100℃进行脱气提纯，持续10h；
(3)在步骤(2)所述温度下，向所述加热炉中注入惰性气体，缓 慢升温至1900℃再次进行提纯，提纯时间为15h，得到低氮含量和低金属杂质含量的碳粉和石墨坩埚及保温结构；
(4)将步骤(3)所述高纯碳粉与步骤(1)所述高纯硅粉混合均匀，置于步骤(3)所述提纯后的石墨坩埚中，将石墨坩埚与步骤(3)所述保温结构置于加热炉中，将加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1100℃进行合成反应，反应持续12h；
(5)在步骤(4)所述温度下注入惰性气体至900mbar，缓慢升温至2100℃进行转化反应30h，得到碳化硅粉料；
(6)将步骤(5)所述碳化硅粉料在700℃下通氧气煅烧3h以上，除去多余的游离碳，得到提纯后的高纯碳化硅粉料。
实施例4
制备高纯碳化硅粉料的方法，所述制备方法包括以下具体步骤：
(1)提供高纯硅粉和高纯碳粉，高纯硅粉和高纯碳粉的摩尔比为1.0；
(2)将所述高纯碳粉置于石墨坩埚中，再将石墨坩埚与保温结构置于加热炉中，对加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1300℃进行脱气提纯，持续5h；
(3)在步骤(2)所述温度下，向所述加热炉中注入惰性气体，缓慢升温至2200℃再次进行提纯，提纯时间为15h，得到低氮含量和低金属杂质含量的碳粉和石墨坩埚及保温结构；
(4)将步骤(3)所述高纯碳粉与步骤(1)所述高纯硅粉混合均匀，置于步骤(3)所述提纯后的石墨坩埚中，将石墨坩埚与步骤(3)所述保温结构置于加热炉中，将加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1200℃进行合成反应，反应持续15h；
(5)在步骤(4)所述温度下注入惰性气体至1000mbar，缓慢升温至2200℃进行转化反应10h，得到碳化硅粉料；
(6)将步骤(5)所述碳化硅粉料在700℃下通氧气煅烧3h以上，除去多余的游离碳，得到提纯后的高纯碳化硅粉料。
实施例5
制备高纯碳化硅粉料的方法，所述制备方法包括以下具体步骤：
(1)提供高纯硅粉和高纯碳粉，高纯硅粉和高纯碳粉的摩尔比为1.0；
(2)将所述高纯碳粉置于石墨坩埚中，再将石墨坩埚与保温结构置于加热炉中，对加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1200℃进行脱气提纯，持续8h；
(3)在步骤(2)所述温度下，向所述加热炉中注入惰性气体，缓慢升温至2200℃再次进行提纯，提纯时间为20h，得到低氮含量和低金属杂质含量的碳粉和石墨坩埚及保温结构；
(4)将步骤(3)所述高纯碳粉与步骤(1)所述高纯硅粉混合均匀，置于步骤(3)所述提纯后的石墨坩埚中，将石墨坩埚与步骤(3)所述保温结构置于加热炉中，将加热炉抽真空使真空度达到1x10 ‐4mbar，升温至1500℃进行合成反应，反应持续10h；
(5)在步骤(4)所述温度下注入惰性气体至1000mbar，缓慢升温至2300℃进行转化反应20h，得到碳化硅粉料；
(6)将步骤(5)所述碳化硅粉料在600℃下通氧气煅烧3h以上，除去多余的游离碳，得到提纯后的高纯碳化硅粉料。
对比例
为更清楚说明本发明方法所得碳化硅的纯度高，对采用普通方法和本发明方法制得的碳化硅的杂质含量进行了检测，检测方法采用GDMS(辉光放电质谱法)。测试数据如表1所示。
表1采用普通方法和本发明方法制得的碳化硅的杂质含量
Figure PCTCN2018123715-appb-000001
Figure PCTCN2018123715-appb-000002
通过表1的杂质含量数据可以看出，采用本发明的方法制得的碳化硅的杂质含量更低，仅为1.78ppm wt，远低于采用普通方法制得的碳化硅的杂质含量21.29ppm wt。采用本发明的方法制得的碳化硅的每种杂质的含量，也低于采用普通方法制得的碳化硅的相应杂质的含量。
通过所得碳化硅的颜色定性判定杂质氮含量，采用本发明的方法制得的碳化硅的颜色为浅黄白色，而采用普通方法制得的碳化硅的颜色为偏绿色或发灰，从而说明采用本发明的方法制得的碳化硅的氮含量更低。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。
以上所述仅为本发明的实施例而已，并不用于限制本发明。对于本领域技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本发明的权利要求范围之内。

Claims (17)

  1. 一种制备高纯碳化硅粉料的方法，其特征在于，所述制备方法包括以下步骤：
    (1)选择高纯硅粉和高纯碳粉；
    (2)对高纯碳粉、石墨坩埚和保温结构进行一次提纯和二次提纯，其中，一次提纯采用真空脱气提纯，二次提纯采用惰性气体下的高温提纯；
    (3)将步骤(2)二次提纯得到的高纯碳粉和步骤(1)中的高纯硅粉置于步骤(2)二次提纯得到的石墨坩埚中，反应得到高纯碳化硅粉料。
  2. 根据权利要求1所述的制备高纯碳化硅粉料的方法，其特征在于，步骤(3)之后，还包括对高纯碳化硅粉料进行低温通氧煅烧的步骤。
  3. 根据权利要求1所述的制备高纯碳化硅粉料的方法，其特征在于，步骤(2)中，所述真空脱气提纯的具体操作如下：
    将所述高纯碳粉置于石墨坩埚中，将石墨坩埚和保温结构在真空条件下，升温脱气提纯。
  4. 根据权利要求3所述的制备高纯碳化硅粉料的方法，其特征在于，升温至1000‐1500℃，脱气提纯5-20h。
  5. 根据权利要求4所述的制备高纯碳化硅粉料的方法，其特征在于，升温至1200‐1400℃，脱气提纯8-15h。
  6. 根据权利要求5所述的制备高纯碳化硅粉料的方法，其特征在于，升温至1300℃，脱气提纯10h。
  7. 根据权利要求1‐3任一所述的制备高纯碳化硅粉料的方法，其特征在于，步骤(2)中，所述惰性气体下的高温提纯的具体操作如下：
    向石墨坩埚和保温结构中通入惰性气体，缓慢升温至1800‐2300℃进 行提纯，得到低氮含量和低金属杂质含量的高纯碳粉、石墨坩埚和保温结构。
  8. 根据权利要求7所述的制备高纯碳化硅粉料的方法，其特征在于，所述缓慢升温至1800‐2300℃进行提纯的时间为5‐50h；所述惰性气体选自氩气和/或氦气。
  9. 根据权利要求8所述的制备高纯碳化硅粉料的方法，其特征在于，所述缓慢升温至1900‐2200℃进行提纯的时间为10‐40h。
  10. 根据权利要求9所述的制备高纯碳化硅粉料的方法，其特征在于，所述缓慢升温至2100℃进行提纯的时间为30h。
  11. 根据权利要求1所述的制备高纯碳化硅粉料的方法，其特征在于，所述步骤(3)的具体操作如下：将步骤(2)二次提纯得到的高纯碳粉和步骤(1)中的高纯硅粉混匀，置于步骤(2)二次提纯得到的石墨坩埚中，之后，将石墨坩埚在真空条件下加热进行合成反应；合成反应之后，通入惰性气体，缓慢升温进行转化反应得到高纯碳化硅粉料。
  12. 根据权利要求11所述的制备高纯碳化硅粉料的方法，其特征在于，所述合成反应的温度为1000‐1500℃，合成反应的时间为5‐15h；所述转化反应的温度为1800‐2300℃，转化反应的时间为5-50h；所述惰性气体选自氩气和/或氦气。
  13. 根据权利要求12所述的制备高纯碳化硅粉料的方法，其特征在于，所述合成反应的温度为1200‐1400℃，合成反应的时间为8‐12h；所述转化反应的温度为1900‐2200℃，转化反应的时间为15-30h。
  14. 根据权利要求13所述的制备高纯碳化硅粉料的方法，其特征在于，所述合成反应的温度为1300℃，合成反应的时间为10h；所述转化反应的温度为2100℃，转化反应的时间为25h。
  15. 根据权利要求2所述的制备高纯碳化硅粉料的方法，其特征在 于，所述低温通氧煅烧为在500‐1000℃下通氧气煅烧3h以上。
  16. 根据权利要求15所述的制备高纯碳化硅粉料的方法，其特征在于，所述低温通氧煅烧为在800℃下通氧气煅烧10h。
  17. 由权利要求1‐16任一所述的制备高纯碳化硅粉料的方法制备得到的高纯碳化硅粉料。
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