WO2020059011A1 - Appareil de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et programme - Google Patents

Appareil de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et programme Download PDF

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Publication number
WO2020059011A1
WO2020059011A1 PCT/JP2018/034419 JP2018034419W WO2020059011A1 WO 2020059011 A1 WO2020059011 A1 WO 2020059011A1 JP 2018034419 W JP2018034419 W JP 2018034419W WO 2020059011 A1 WO2020059011 A1 WO 2020059011A1
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WIPO (PCT)
Prior art keywords
substrate processing
correlation curve
component
processing apparatus
monitored
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PCT/JP2018/034419
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English (en)
Japanese (ja)
Inventor
加我　友紀直
一良 山本
秀元 林原
一秀 浅井
Original Assignee
株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ filed Critical 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
Priority to PCT/JP2018/034419 priority Critical patent/WO2020059011A1/fr
Priority to JP2020547492A priority patent/JP7186236B2/ja
Priority to CN201880097796.3A priority patent/CN112740358B/zh
Priority to KR1020217000321A priority patent/KR102512456B1/ko
Publication of WO2020059011A1 publication Critical patent/WO2020059011A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0221—Preprocessing measurements, e.g. data collection rate adjustment; Standardization of measurements; Time series or signal analysis, e.g. frequency analysis or wavelets; Trustworthiness of measurements; Indexes therefor; Measurements using easily measured parameters to estimate parameters difficult to measure; Virtual sensor creation; De-noising; Sensor fusion; Unconventional preprocessing inherently present in specific fault detection methods like PCA-based methods
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0224—Process history based detection method, e.g. whereby history implies the availability of large amounts of data
    • G05B23/0227—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions
    • G05B23/0235—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions based on a comparison with predetermined threshold or range, e.g. "classical methods", carried out during normal operation; threshold adaptation or choice; when or how to compare with the threshold
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0259—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
    • G05B23/0267—Fault communication, e.g. human machine interface [HMI]
    • G05B23/027—Alarm generation, e.g. communication protocol; Forms of alarm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Definitions

  • the present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.
  • Patent Literature 1 discloses a technique for identifying an abnormality factor using a plurality of monitor data in an abnormality analysis.
  • Patent Literature 2 discloses a technique for displaying a plurality of monitor data and event data in an abnormality analysis.
  • the present disclosure has an object to provide a configuration capable of preventing defective production of a substrate due to a temporal change in a correlation of a plurality of data and improving a production yield.
  • a configuration that includes a control unit that operates a substrate processing system by executing a process recipe including a plurality of steps,
  • the control unit includes: During the execution of the process recipe, for a step that satisfies a predetermined collection condition, collects component data on a component to be monitored in the substrate processing system, Generate a correlation curve showing the correlation of the collected component data, Comparing the generated correlation curve with an initial correlation curve serving as a reference stored in advance, to determine whether the difference between the correlation curve and the initial correlation curve exceeds a predetermined threshold, A configuration is provided for generating an alarm when the threshold is exceeded.
  • FIG. 1 is a side sectional view showing a substrate processing apparatus suitably used in one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a control unit suitably used in one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a main controller suitably used in one embodiment.
  • FIG. 1 is a diagram illustrating a configuration example of a substrate processing system including a component to be monitored, which is preferably used in one embodiment.
  • FIG. 7 is an explanatory diagram showing a specific example illustrating a component to be collected, a component data collection condition, and a method of calculating component data for generating correlation data in each step of a process recipe performed in an embodiment. is there.
  • FIG. 1 is a side sectional view showing a substrate processing apparatus suitably used in one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a control unit suitably used in one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a main controller suitably used in one
  • FIG. 4 is an explanatory diagram illustrating a specific example of a correlation curve generated in one embodiment.
  • FIG. 4 is an explanatory diagram illustrating a specific example of a screen displayed in one embodiment. It is an illustration example of a cause judgment table for each combination pattern of each sensor information used in one embodiment.
  • FIG. 11 is a diagram illustrating a configuration example of a substrate processing system including a component to be monitored, which is suitably used in a modification of the embodiment. It is an illustration example of a cause judgment table for each combination pattern of each sensor information used in a modification of one embodiment.
  • a substrate processing apparatus (hereinafter, also simply referred to as an apparatus) 1 to which the present disclosure is applied includes a housing 2, and a lower part of a front wall 3 of the housing 2 can be maintained. (Front maintenance opening) 4 is provided, and the opening 4 is opened and closed by a front maintenance door 5.
  • a pod loading / unloading port 6 is opened on the front wall 3 of the casing 2 so as to communicate between the inside and the outside of the casing 2, and the pod loading / unloading port 6 is opened and closed by a front shutter 7.
  • a load port 8 is installed on the front side, and the load port 8 is configured to position the mounted pod 9.
  • the pod 9 is a hermetically sealed substrate transfer container, which is carried into and out of the load port 8 by an in-process transfer device (not shown).
  • a rotatable pod shelf 11 is provided at an upper portion in a substantially central portion in the front-rear direction in the housing 2, and the rotatable pod shelf 11 is configured to store a plurality of pods 9. .
  • the rotary pod shelf 11 includes a column 12 that is vertically erected and is intermittently rotated, and a plurality of stages of shelves 13 radially supported by the column 12 at respective positions of upper, middle, and lower stages.
  • the shelf 13 is configured to store a plurality of pods 9 in a state of being placed thereon.
  • a pod opener 14 is provided below the rotary pod shelf 11, and the pod opener 14 has a configuration on which the pod 9 can be placed and a lid of the pod 9 can be opened and closed.
  • a pod transport mechanism 15 is provided between the load port 8 and the rotary pod shelf 11 and the pod opener 14.
  • the pod transport mechanism 15 can hold the pod 9 and can move up and down, and can move forward and backward in the horizontal direction.
  • the pod 9 is transported between the load port 8, the rotary pod shelf 11, and the pod opener 14.
  • a sub-housing 16 is provided at a lower portion in a substantially central portion in the front-rear direction in the housing 2 over the rear end.
  • a pair of wafer loading / unloading ports 19 for loading / unloading a wafer (hereinafter, also referred to as a substrate) 18 into / from the sub-casing 16 is vertically arranged on the front wall 17 of the sub-casing 16 in two vertical stages.
  • the pod openers 14 are respectively provided for the upper and lower wafer loading / unloading ports 19.
  • the pod opener 14 includes a mounting table 21 on which the pod 9 is mounted, and an opening / closing mechanism 22 for opening and closing the lid of the pod 9.
  • the pod opener 14 is configured to open and close a wafer entrance of the pod 9 by opening and closing a lid of the pod 9 mounted on the mounting table 21 by an opening and closing mechanism 22.
  • the sub-housing 16 constitutes a transfer chamber 23 which is airtight from a space (pod transfer space) in which the pod transfer mechanism 15 and the rotary pod shelf 11 are provided.
  • a wafer transfer mechanism (substrate transfer mechanism) 24 is installed in the front area of the transfer chamber 23.
  • the substrate transfer mechanism 24 has a required number (five in the drawing) of the substrates 18 to be mounted.
  • a wafer mounting plate 25 is provided. The wafer mounting plate 25 can be moved directly in the horizontal direction, can be rotated in the horizontal direction, and can be moved up and down.
  • the substrate transfer mechanism 24 is configured to load and unload the substrate 18 to and from the boat (substrate holder) 26.
  • a standby unit 27 that accommodates and stands by the boat 26 is configured.
  • a vertical processing furnace 28 is provided above the standby unit 27, a vertical processing furnace 28 is provided.
  • the processing furnace 28 has a processing chamber (reaction chamber) 29 formed therein.
  • the lower end of the processing chamber 29 is a furnace port, and the furnace port is opened and closed by a furnace port shutter 31. ing.
  • a boat elevator 32 as an elevating mechanism for elevating the boat 26 is installed between the right end of the housing 2 and the right end of the standby section 27 of the sub-housing 16.
  • a seal cap 34 as a cover is horizontally mounted on an arm 33 connected to the elevator of the boat elevator 32.
  • the cover 34 vertically supports the boat 26, and transfers the boat 26 to the processing chamber 29.
  • the furnace port can be hermetically closed in a state where the furnace is charged.
  • the boat 26 is configured so that a plurality of (for example, about 50 to 125) substrates 18 are aligned in the center thereof and held in multiple stages in a horizontal posture.
  • a clean unit 35 is disposed at a position facing the boat elevator 32 side.
  • the clean unit 35 is configured by a supply fan and a dustproof filter for supplying a clean atmosphere or clean air 36 that is an inert gas. I have. Between the substrate transfer mechanism 24 and the clean unit 35, a notch aligning device (not shown) as a substrate aligning device for aligning the circumferential position of the substrate 18 is provided.
  • the clean air 36 blown from the clean unit 35 flows through the notch alignment device (not shown), the substrate transfer mechanism 24, and the boat 26, and is then sucked by a duct (not shown) and exhausted to the outside of the housing 2. Or is blown into the transfer chamber 23 by the clean unit 35.
  • the pod 9 When the pod 9 is supplied to the load port 8, the pod loading / unloading port 6 is opened by the front shutter 7.
  • the pod 9 on the load port 8 is carried into the housing 2 through the pod carry-in / out port 6 by the pod transport device 15 and is placed on the designated shelf 13 of the rotary pod shelf 11.
  • the pod 9 After the pod 9 is temporarily stored on the rotary pod shelf 11, the pod 9 is transferred from the shelf 13 to one of the pod openers 14 by the pod transfer device 15 and transferred to the mounting table 21, or 8 and transferred directly to the mounting table 21.
  • the wafer loading / unloading port 19 is closed by the opening / closing mechanism 22, and the transfer chamber 23 is filled with the clean air 36 flowing therethrough. Since the transfer chamber 23 is filled with nitrogen gas as clean air 36, the oxygen concentration in the transfer chamber 23 is lower than the oxygen concentration inside the housing 2.
  • the pod 9 placed on the mounting table 21 has its opening-side end face pressed against the edge of the opening of the wafer loading / unloading port 19 on the front wall 17 of the sub-housing 16, and the lid is removed by the opening / closing mechanism 22. , The wafer entrance is opened.
  • the substrate 18 is taken out of the pod 9 by the substrate transfer mechanism 24, transferred to a notch aligning device (not shown), and aligned with the notch aligning device. Thereafter, the substrate transfer mechanism 24 carries the substrate 18 into the standby section 27 located behind the transfer chamber 23 and charges (charges) the boat 26.
  • the substrate transfer mechanism 24 that has transferred the substrate 18 to the boat 26 returns to the pod 9, and loads the next substrate 18 into the boat 26. While the substrate transfer mechanism 24 in one (upper or lower) pod opener 14 is loading the substrate 18 into the boat 26, the other (lower or upper) pod opener 14 is separated from the rotary pod shelf 11 by another. The pod 9 is transported and transferred by the pod transport device 15, and the opening of the pod 9 by the other pod opener 14 proceeds simultaneously.
  • a purge step in which the processing chamber 29 is replaced with an inert gas at this timing (after loading) is provided.
  • the processing chamber 29 is evacuated to a desired pressure (degree of vacuum) by a gas exhaust mechanism (not shown) such as a vacuum pump. Further, the processing chamber 29 is heated to a predetermined temperature by a heater driving unit (not shown) so as to have a desired temperature distribution.
  • a processing gas controlled at a predetermined flow rate is supplied by a gas supply mechanism (not shown), and the processing gas contacts the surface of the substrate 18 in the process of flowing through the processing chamber 29, and A predetermined process is performed. Further, the processing gas after the reaction is exhausted from the processing chamber 29 by the gas exhaust mechanism.
  • an inert gas is supplied from an inert gas supply source (not shown) by a gas supply mechanism, and the processing chamber 29 is replaced with the inert gas. Is returned to normal pressure (after-purge step). Then, the boat 26 is lowered by the boat elevator 32 via the seal cap 34.
  • the substrate 18 and the pod 9 are discharged to the outside of the housing 2 in a procedure reverse to the above description.
  • the unprocessed substrate 18 is further loaded into the boat 26, and the processing of the substrate 18 is repeated.
  • control unit 200 includes a main controller 201, a transport controller 211 as a transport controller, a process controller 212 as a processing controller, an apparatus management controller 215 as a data monitoring unit, It has.
  • the device management controller 215 functions as a data collection controller, collects device data inside and outside the device 1, and monitors the soundness of the device data DD inside the device 1.
  • the control unit 200 is housed in the device 1.
  • the transport system controller 211, the process system controller 212, and the device management controller 215 have the same configuration as the main controller 201.
  • the apparatus data DD refers to data (hereinafter, also referred to as control parameters) relating to substrate processing such as a processing temperature, a processing pressure, and a flow rate of a processing gas when the apparatus 1 processes the substrate 18, and the quality of a manufactured product substrate.
  • control parameters data relating to substrate processing such as a processing temperature, a processing pressure, and a flow rate of a processing gas when the apparatus 1 processes the substrate 18, and the quality of a manufactured product substrate.
  • the component data e.g., the quartz reaction tube, heater, valve, mass flow controller (hereinafter, MFC), etc.
  • MFC mass flow controller
  • the main controller 201 is electrically connected to the transport controller 211 and the process controller 212 by a LAN line LAN1 such as 100BASE-T, for example, so that transmission / reception of each device data DD and download / upload of each file can be performed. It has a possible configuration.
  • An external host computer 300 and management device 310 are connected to the main controller 201 via a communication network LAN2 such as 100BASE-T. For this reason, even when the device 1 is installed in a clean room, the host computer 300 and the management device 310 can be arranged in an office or the like outside the clean room.
  • a communication network LAN2 such as 100BASE-T.
  • the device management controller 215 is connected to the main controller 201 via a LAN line, is configured to collect device data DD from the main controller 201, quantify the operation state of the device, and display it on a screen.
  • the device management controller 215 will be described later in detail.
  • the transport system controller 211 is connected to a substrate transport system 211A mainly including the rotary pod shelf 11, the boat elevator 32, the pod transport device 15, the substrate transfer mechanism 24, the boat 26, and a rotation mechanism (not shown). ing.
  • the transport system controller 211 is configured to control transport operations of the rotary pod shelf 11, the boat elevator 32, the pod transport device 15, the substrate transfer mechanism 24, the boat 26, and a rotation mechanism (not shown). .
  • the process controller 212 includes a temperature controller 212a, a pressure controller 212b, a gas flow controller 212c, and a sequencer 212d.
  • the temperature controller 212a, the pressure controller 212b, the gas flow controller 212c, and the sequencer 212d constitute a sub-controller and are electrically connected to the process system controller 212. Uploading is possible.
  • a heating mechanism 212A mainly composed of a heater, a temperature sensor, and the like is connected to the temperature controller 212a.
  • the temperature controller 212a is configured to control the temperature inside the processing furnace 28 by controlling the temperature of the heater of the processing furnace 28.
  • the temperature controller 212a is configured to perform switching (on / off) control of the thyristor, and to control electric power supplied to the heater element wire.
  • a gas exhaust mechanism 212B mainly composed of a pressure sensor, an APC valve as a pressure valve, and a vacuum pump is connected to the pressure controller 212b.
  • the pressure controller 212b controls the opening degree of the APC valve and the switching (on / off) of the vacuum pump based on the pressure value detected by the pressure sensor so that the pressure in the processing chamber 29 becomes a desired pressure at a desired timing. It is configured to control.
  • the gas flow controller 212c is configured by the MFC 212c.
  • the sequencer 212d is configured to control the supply and stop of the gas from the processing gas supply pipe and the purge gas supply pipe by opening and closing the valve 212D.
  • the process controller 212 having such a configuration is configured to control the MFC 212c and the valve 212D so that the flow rate of the gas supplied to the processing chamber 29 becomes a desired flow rate at a desired timing.
  • the main controller 201, the transport system controller 211, the process system controller 212, and the device management controller 215 according to the present embodiment can be realized using an ordinary computer system without using a dedicated system. For example, by installing the program from a recording medium (such as a USB key) that stores the program for executing the above-described process in a general-purpose computer, each controller that executes a predetermined process can be configured.
  • a recording medium such as a USB key
  • each controller including the main controller 201, the transport system controller 211, the process system controller 212, the device management controller 215, and the like starts the provided program and executes it under the control of the OS in the same manner as other application programs. Thereby, a predetermined process can be executed.
  • the main controller 201 includes an operation display unit 227 including a main controller control unit 220, a hard disk 222 as a main control storage unit, a display unit for displaying various information, and an input unit for receiving various instructions from an operator. It is configured to include a transmission / reception module 228 as a main controller communication unit that communicates with inside and outside.
  • the main controller 220 includes a CPU (Central Processing Unit) 224 and a memory (RAM, ROM, etc.) 226 as a temporary storage unit, and is configured as a computer having a clock function (not shown).
  • the hard disk 222 includes recipe files such as recipes in which processing conditions and processing procedures of the substrate are defined, a control program file for executing these recipe files, a parameter file in which parameters for executing the recipes are defined, Further, in addition to an error processing program file and an error processing parameter file, various screen files including an input screen for inputting process parameters, various icon files, and the like (all not shown) are stored.
  • each operation as an input unit for inputting operation instructions to the substrate transfer system 211A, the heating mechanism 212A, the gas exhaust mechanism 212B, and the gas supply system 212C shown in FIG. Buttons can also be provided.
  • the operation display unit 227 is configured to display an operation screen for operating the device 1.
  • the operation display unit 227 displays information based on device data DD generated in the device 1 via the operation screen on the operation screen.
  • the operation screen of the operation display unit 227 is, for example, a touch panel using liquid crystal.
  • the operation display unit 227 receives input data (input instruction) of the operator from the operation screen and transmits the input data to the main controller 201. Further, the operation display unit 227 provides an instruction to execute an arbitrary substrate processing recipe (hereinafter, also referred to as a process recipe) among a plurality of recipes stored in the hard disk 222 or a recipe developed in the memory (RAM) 226 or the like. Control instruction) and transmits it to the main controller 220.
  • the device management controller 215 when the device management controller 215 starts up, by executing various programs and the like, each stored screen file and data table are expanded, and by reading the device data DD, the operating state of the device is read. Are configured to be displayed on the operation display unit 227.
  • a switching hub or the like is connected to the main controller communication unit 228, and the main controller 201 communicates with the external computer 300 and other controllers (211 212, and 215) in the apparatus 1 and the like via a network. Is configured to perform transmission and reception.
  • the main controller 201 also transmits device data DD such as the status of the device 1 to an external host computer 300, for example, a host computer via a network (not shown).
  • device data DD such as the status of the device 1
  • an external host computer 300 for example, a host computer via a network (not shown).
  • the substrate processing operation of the apparatus 1 is controlled by the control unit 200 based on each recipe file, each parameter file, and the like stored in the main controller storage unit 222.
  • the process recipe is developed in a memory such as a RAM in the process controller 212, for example. Then, an operation instruction is given from the main controller 201 to the process controller 212 and the transport controller 211 as needed.
  • the substrate processing step performed in this manner includes at least a loading step, a film forming step, and a discharging step.
  • the main controller 201 issues an instruction to drive the substrate transfer mechanism 24 to the transport system controller 211. Then, while following instructions from the transport system controller 211, the substrate transfer mechanism 24 starts the transfer processing of the substrate 18 from the pod 9 on the mounting table 21 to the boat 26. This transfer processing is performed until the loading (wafer charging) of all the planned substrates 18 into the boat 26 is completed.
  • the inside of the processing chamber 29 is evacuated by a vacuum exhaust device such as a vacuum pump so as to have a predetermined film forming pressure (degree of vacuum) while following instructions from the pressure control unit 212b. Further, the inside of the processing chamber 29 is heated by a heater to a predetermined temperature while following an instruction from the temperature control unit 212a. Subsequently, the rotation of the boat 26 and the substrate 18 by the rotation mechanism is started while following instructions from the transport system controller 211. Then, while maintaining a predetermined pressure and a predetermined temperature, a predetermined gas (processing gas) is supplied to the plurality of substrates 18 held by the boat 26 to perform predetermined processing (for example, film formation) on the substrates 18. Processing) is performed. Before the next unloading step, the temperature may be lowered from the processing temperature (predetermined temperature).
  • a predetermined film forming pressure degree of vacuum
  • the boat 26 holding the processed substrate 18 is cooled very effectively by the clean air 36 blown out from the clean unit 35.
  • the processed substrate 18 is removed from the boat 26 (wafer discharge) and transferred to the pod 9, and then the new unprocessed substrate 18 is transferred to the boat 26. Is performed.
  • a plurality of types of processing gases N2-1, N2-2, and N2-3 are adjusted in a flow rate by a corresponding gas flow rate controller (MFC) 212c.
  • the substrate 18 is supplied to the processing chamber (reaction chamber) 29 into which the substrate 18 has been loaded at the timing set for each.
  • the plurality of types of processing gases N2-1, N2-2, and N2-3 include a first element-containing gas that is a source gas, a second element-containing gas that is a reactive gas or a reforming gas, and a gas that acts as a purge gas. There are active gases and the like.
  • the gas is exhausted from the processing chamber 29 by an APC valve (hereinafter simply referred to as a valve) 212B-1 and a vacuum pump (hereinafter simply referred to as a pump) 212B-2 of the gas exhaust mechanism 212B.
  • APC valve hereinafter simply referred to as a valve
  • a vacuum pump hereinafter simply referred to as a pump
  • the pressure inside is adjusted.
  • the pressure in the reaction chamber 29 is detected by the pressure sensor PG1.
  • the substrate 18 carried into the reaction chamber 29 is processed by a substrate processing system including at least the reaction chamber 29, the MFC 212c, the valve 212B-1, the pump 212B-2, the pressure sensor PG1, and the like. Then, in the film forming process, the process controller 212 controls the MFC 212c, the valve 212B-1, and the pump 212B-2 such that the flow rates of various gases supplied to the reaction chamber 29 become desired at desired timings. I do.
  • the device management controller 215 can function as a data collection controller and collect device data DD inside and outside the device 1. More specifically, the device management controller 215 includes, as device data DD, at least data on the total actual flow rate (unit: slm) of various gases after flow rate adjustment in each MFC 212c in order to monitor the operation state of each MFC 212c. From each MFC 212c, and from the pressure sensor PG1, data on the actual pressure (unit: Pa) of the reaction chamber 29 in order to monitor the operation state of the valve 212B-1 and the pump 212B-2. Is possible.
  • At least one component on the gas supply side of the reaction chamber 29 and one component on the gas exhaust side of the reaction chamber 29 are each selected as one or more components to be monitored.
  • each MFC 212c which is a component on the gas supply side
  • a pressure sensor PG1 which is directly affected by the operation state of the valve 212B-1 and the pump 212B-2, which are components on the gas exhaust side
  • the device management controller 215 collects data on the total actual flow rate obtained by each MFC 212c and data on the actual pressure obtained by the pressure sensor PG1 as component data on the component to be monitored. I have.
  • component data by the device management controller 215 may be performed as needed.
  • component data is collected only for steps that satisfy a predetermined collection condition.
  • a process recipe in which a procedure, conditions, and the like when executing a substrate processing step including a film forming step is formed of a plurality of steps (recipes in the figure) See step #).
  • the device management controller 215 collects component data only for steps that satisfy predetermined collection conditions.
  • the predetermined collection conditions include, for example, the processing time of each step constituting the process recipe to be executed, the open / closed state of the valve 212B-1, and the operating state of the pump 212B-2. More specifically, for example, the device management controller 215 determines that the processing time of the step is equal to or longer than a predetermined time (5 seconds in the present embodiment) (see Time [sec] in the figure), and the valve 212B-1 is opened (Open). ) State (see Valve in the figure) and the pump 212B-2 is in the operation (ON) state (see Pump in the figure), and the total data obtained by each MFC 212c for each step as part data is shown. Data on the actual flow rate and data on the actual pressure obtained by the pressure sensor PG1 are collected (see a bold frame in the figure).
  • the device management controller 215 After collecting the component data of each step satisfying the collection condition in this way, the device management controller 215 subsequently generates a correlation curve indicating the correlation between the collected component data as shown in FIG. .
  • the correlation curve indicates a relational expression indicating a relationship between the component data on the input side of the reaction chamber 29 and the component data on the output side of the reaction chamber 29.
  • a relational expression between the actual gas flow rate controlled by each MFC 212c supplied to the reaction chamber 29 and the pressure sensor PG1 for detecting the pressure in the reaction chamber 29 is shown.
  • the apparatus management controller 215 determines the total actual value of each MFC 212c collected in each step satisfying the collection condition in a coordinate space in which the measured value of the pressure sensor PG1 is the vertical axis and the actual gas flow rate to the reaction chamber 29 is the horizontal axis.
  • the correlation curve is generated by plotting the data on the flow rate and the data on the actual pressure by the pressure sensor PG1 in association with each other. Also, depending on the process recipe, a large amount of data may be collected, and simply plotting the data may not be enough to draw a correlation curve.
  • the device management controller 215 may be configured in advance to generate a correlation curve (relational expression) by obtaining an approximate curve using, for example, the least square method. Then, by referring to the correlation curve generated in this way, the device management controller 215 determines, for each step, the total data by each MFC 212c with respect to the data on the actual pressure by the pressure sensor PG1 (ie, the actual measurement value of the pressure sensor PG1). Data on the actual flow rate (that is, the actual gas flow rate to the reaction chamber 29) can be calculated.
  • a correlation curve correlational expression
  • the correlation curve is generated each time the process recipe is executed.
  • the device management controller 215 then compares the generated correlation curve with an initial correlation curve stored in advance as a reference. The comparison with the initial correlation curve is performed each time the process recipe is executed.
  • the initial correlation curve is a correlation curve serving as a reference for judging abnormality of the generated correlation curve (presence or absence of a change in the correlation curve).
  • the initial correlation curve indicates a state in which the substrate processing unit including the reaction chamber 29 and the like is exhibiting a predetermined film forming performance (that is, in a reference batch, for example, the substrate processing unit exhibits the film forming performance without any problem. (Corresponding state). It is assumed that the initial correlation curve is stored in advance in a storage unit accessible by the device management controller 215 (for example, the main control storage unit 222 of the main controller 201).
  • the device management controller 215 determines whether or not the difference between the correlation curve and the initial correlation curve exceeds a predetermined threshold. Specifically, for example, for the pressure in the reaction chamber 29 at an arbitrary flow rate, a difference between a value calculated from the correlation curve and a value calculated from the initial correlation curve is obtained, and the difference is set to a predetermined threshold. It is determined whether or not it has exceeded.
  • the arbitrary flow rate does not necessarily have to be at one point, but may be at a plurality of points. In that case, the differences at the respective points are obtained, and it is determined whether or not the total value of the respective differences exceeds a predetermined threshold. It is assumed that the threshold value on which the determination is based is stored in advance in the storage unit 222 accessible by the device management controller 215, similarly to the initial correlation curve.
  • the device management controller 215 requests the main controller 201 to generate an alarm. In response to this, the main controller 201 outputs an alarm on the screen of the operation display unit 227, or outputs an alarm to the external computer 300 via the network. Note that the device management controller 215 determines that the correlation curve is normal when the difference between the correlation curve and the initial correlation curve falls within the threshold value.
  • each component including a component to be monitored is displayed on the screen as a schematic configuration diagram (apparatus schematic diagram), and the component to be monitored is displayed in a list format. It is displayed on the screen by a table table (part management table or the like). Then, on the display screen, the location determined to be the cause of the change of the correlation curve can be distinguished from other locations by, for example, changing the display color.
  • the display color of the MFC design or the corresponding column is changed to a predetermined color (for example, error display). Change the color to yellow) so that it can be distinguished from other parts.
  • a predetermined color for example, error display
  • the display color of the design of the pump or the corresponding column is changed to a predetermined color (for example, yellow which is an error display color) so that it can be distinguished from other parts. I do.
  • the specific mode of the alarm output is not limited to the example given here, but may be another mode as long as it is a preset mode.
  • a predetermined symbol for example, an! Mark
  • the operator of the apparatus 1 can recognize a portion requiring repair or maintenance. For example, even when repair or maintenance is performed as a countermeasure against defective production of the substrate 18 that may occur with aging, downtime of the apparatus 1 can be reduced as much as possible.
  • the operator of the apparatus 1 has a temporal change in the correlation between the plurality of component data as compared with the case defined by the initial correlation curve. You can recognize that. Therefore, for example, even if a situation occurs in which defective production of the substrate 18 may occur due to a change over time, this can be determined and recognized each time the process recipe is executed. It is possible to improve the production yield by preventing it before it happens.
  • a cause determination table for each combination pattern of the sensor information (hereinafter, also simply referred to as a cause determination table) is prepared in advance.
  • the cause determination table is configured by a table in which a combination pattern of error items for a component to be monitored is defined, and is stored in the storage unit 222 accessible by the device management controller 215.
  • an error item relating to the gas supply side component of the reaction chamber 29 and an error item relating to the gas exhaust side component of the reaction chamber 29 are included as error items for the monitored component. Items are provided. More specifically, the error items related to the components on the gas supply side include, for example, the zero point voltage of each MFC 212c and the deviation between the set flow rate and the actual flow rate in each MFC 212c. Further, as an error item related to the components on the gas exhaust side of the reaction chamber 29, for example, there is a leak rate of the reaction chamber 29 that can be obtained from the detection result by the pressure sensor PG1. Then, a cause determination table is configured by a combination of the zero point voltage of each MFC 212c, the deviation between the set flow rate and the actual flow rate in each MFC 212c, and the leak rate of the reaction chamber 29.
  • the device management controller 215 When the difference between the correlation curve and the initial correlation curve exceeds the threshold, the device management controller 215 generates an alarm as described above, while generating an error item for each monitored component (for example, there is a change / None). Each error item can be confirmed by monitoring sensor information from the corresponding monitoring target component. Then, the result of the check is compared with a corresponding combination pattern in a cause determination table (table), and a part to be monitored that has an abnormality is identified, thereby performing a determination process on the cause of the alarm. I have.
  • the device management controller 215 determines the cause of the change in the correlation curve (described above). Can be concluded as a change in the actual flow rate of the supplied gas due to a change in the MFC zero point voltage.
  • the device management controller 215 determines that the cause of the change (alarm) in the correlation curve is And the change in the actual flow rate of the supply gas due to the MFC failure. Further, for example, as shown in Case 3 in FIG.
  • the device management controller 215 determines that the correlation curve change (alarm) is caused in the furnace. It can be concluded that the leak amount has changed.
  • the device management controller 215 determines that the cause of the change in the correlation curve is deterioration of the pump 212B-2 or by-products. It can be determined that exhaust pipe blockage occurs due to this.
  • the device management controller 215 determines that the MFC has failed and an abnormality has occurred.
  • the main controller 201 is instructed to stop the MFC (transmit a stop signal). Further, when the error items of both the MFC zero point voltage and the leak rate occur, it is concluded that the cause of the alarm is both of them. The same applies to the case of the MFC deviation and the leak rate.
  • the cause of the abnormality due to the combination of error items including parts on the exhaust side is unknown. Accordingly, when a cause other than the leak rate of the MFC 212c or the reaction chamber 29 is considered as in Case 4 of FIG. 9, it is determined that the pump 212B-2 is deteriorated or the exhaust pipe is blocked by a by-product.
  • the cause determination table according to the present embodiment is an example, and an error item can be added, and an error item relating to the valve 212B-1 or the pump 212B-2 can be added in the future. When the combination pattern of the error items increases in this way, the cause can be determined by the cause determination table for any abnormality, and the recovery processing can be performed.
  • the device management controller 215 requests the main controller 201 to report a cause determined based on the cause determination table together with the alarm output.
  • the main controller 201 issues a report on the screen of the operation display unit 227, or issues a report to the external computer 300 via the network.
  • a screen shown in FIG. 8 can be used.
  • the display color of the MFC design or the corresponding column is changed to a predetermined color (for example, yellow which is an error display color)
  • a predetermined color for example, yellow which is an error display color
  • the display color of the design of the pump or the corresponding column is changed to a predetermined color (for example, yellow which is an error display color) so that it can be distinguished from other parts.
  • the information including the cause of the pump abnormality is displayed according to the touch operation on (the design of) the pump in the apparatus schematic diagram.
  • the specific mode of report notification is not limited to the example described here, but may be another mode as long as the mode is a preset mode.
  • data may be transmitted to a computer (PC) installed in a place (for example, an office) separated from the device 1 (not shown).
  • PC computer
  • the error of the component whose cause is specified for example, the MFC or the pump
  • the identifiable display displayed on the device outline diagram or the component management table is returned to the original. You may.
  • the operator or the like of the apparatus 1 can quickly and accurately execute repair or maintenance. Therefore, for example, even when repair or maintenance is performed as a countermeasure against defective production of the substrate 18 which may occur with aging, downtime of the apparatus 1 can be reduced as much as possible.
  • a correlation curve indicating a correlation between component data collected during execution of a process recipe is generated, and a difference between the correlation curve and an initial correlation curve serving as a reference is determined in advance.
  • the threshold value is exceeded, an alarm is generated. Therefore, it is possible to prevent defective production of the board 18 due to a temporal change in the correlation of each component data (plural data), and to improve the production yield of the board 18.
  • a table of cause determination tables is prepared in advance, and when a difference between the correlation curve and the initial correlation curve exceeds a threshold value, occurrence of an error item for each component to be monitored is performed. Is checked and checked against the combination pattern in the cause determination table to perform a determination process for specifying the cause of the abnormality that causes the alarm. Therefore, the cause of the abnormality (that is, the part requiring repair or maintenance) can be quickly and accurately recognized. For example, even when repair or maintenance of the part where the abnormality occurs due to aging is performed, the downtime of the apparatus 1 is reduced. Can be reduced as much as possible, and as a result, the operation rate of the apparatus can be improved.
  • the modified example described here is an example in which a plurality of pressure sensors are installed at various locations, and it is possible to narrow down the exhaust pipe blockage position by a by-product.
  • the distance between the reaction chamber 29 and the valve 212B-1 is increased.
  • Pressure sensor PG4 With such a configuration, in addition to the actual pressure in the reaction chamber 29, the actual pressure at various points in the exhaust pipe can be measured.
  • a corresponding cause determination table for alarm cause determination processing is prepared in advance.
  • the cause determination table also defines the detection results of the pressure sensors PG1 to PG4 as error items. Prepare one composed of combinations.
  • the device management controller 215 can perform the following determination process regarding the cause of the alarm. For example, in Case 1 in FIG. 11, the change in the supply gas actual flow rate due to the change in the MFC zero point voltage, in Case 2, the change in the supply gas actual flow rate due to the MFC failure, and in Case 3, the change in the in-furnace leak rate are the correlation curve changes. Can be determined as the cause. Further, in Case 4 in FIG. 11, it can be concluded that the occurrence of the blockage of the pipe due to the accumulation of by-products between the reaction chamber 29 and the pressure sensor PG2 is the cause of the correlation curve change.
  • a plurality of pressure sensors PG1 to PG4 are installed at various locations, and a cause determination table corresponding to the pressure sensors PG1 to PG4 is prepared in advance. It is possible to narrow down the location of the pipe blockage due to the by-product. Therefore, downtime can be further reduced, which is very preferable in improving the operation rate of the apparatus.
  • the device management controller 215 compares the operation state of each MFC, which is a component on the gas supply side, and the APC valve and the vacuum pump, which are components on the gas exhaust side, with respect to a cause determination table prepared in advance (FIG. 9).
  • the pressure sensor PG1 that is directly affected is automatically selected as each monitored component, and the device management controller 215 creates or selects an initial correlation curve for the selected monitored component and performs the initial correlation. It is conceivable to set a threshold value for a curve and automatically set component data collection conditions for creating a correlation curve in the present embodiment.
  • the device management controller 215 selects a monitoring target component, collects collected component data, creates a correlation curve, and compares the correlation curve with the initial correlation curve according to the cause determination table.
  • the component to be monitored can be automatically monitored. It is possible to select an optimal component from the components constituting the substrate processing apparatus 1 and efficiently manage necessary components.
  • the substrate processing apparatus and the semiconductor device manufacturing method used in the semiconductor manufacturing process have been mainly described.
  • the present invention is not limited to these.
  • a liquid crystal display (LCD) The present invention is also applicable to a substrate processing apparatus for processing a glass substrate, such as an apparatus, and a method of manufacturing the same.
  • any method may be used as long as the liquid material is vaporized and supplied to a processing chamber (reaction chamber) 29 in a processing furnace 28 to form a film on the surface of the substrate (wafer) 18.
  • the type of film to be formed is not particularly limited.
  • the type of film formed in the film formation step may be a film containing a silicon compound (SiN, Si, etc.) or a film containing a metal compound (W, Ti, Hf, etc.) Can also be suitably applied.
  • the film forming process performed in the film forming step includes, for example, a process for forming a CVD (chemical vapor deposition), a PVD (Physical Vapor Deposition), an oxide film, a nitride film, a process for forming a metal-containing film, and the like.
  • CVD chemical vapor deposition
  • PVD Physical Vapor Deposition
  • oxide film oxide film
  • nitride film oxide film
  • metal-containing film a metal-containing film
  • the substrate processing apparatus for performing the film forming process and the method for manufacturing the semiconductor device have been described.
  • the present invention is not limited to these.
  • another substrate processing apparatus Exposure apparatus, lithography apparatus, coating apparatus, CVD apparatus using plasma, etc.
  • Exposure apparatus, lithography apparatus, coating apparatus, CVD apparatus using plasma, etc. can also be applied.

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  • Automation & Control Theory (AREA)
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Abstract

L'invention concerne une configuration qui : comprend une unité de commande qui amène un système de traitement de substrat à exécuter une recette de traitement faisant appel à une pluralité d'étapes ; et, pendant l'exécution de la recette de traitement, pendant une étape satisfaisant une condition de collecte prédéfinie, collecte des données de composant concernant un composant à surveiller dans le système de traitement de substrat, génère une courbe de corrélation indiquant une corrélation entre les données de composant collectées, compare la courbe de corrélation générée avec une courbe de corrélation initiale en tant que référence mémorisée à l'avance pour déterminer si une différence entre la courbe de corrélation et la courbe de corrélation initiale dépasse, ou non, une valeur seuil prédéfinie, et génère une alarme lorsque la différence dépasse la valeur seuil.
PCT/JP2018/034419 2018-09-18 2018-09-18 Appareil de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et programme WO2020059011A1 (fr)

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PCT/JP2018/034419 WO2020059011A1 (fr) 2018-09-18 2018-09-18 Appareil de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et programme
JP2020547492A JP7186236B2 (ja) 2018-09-18 2018-09-18 基板処理装置、半導体装置の製造方法およびプログラム
CN201880097796.3A CN112740358B (zh) 2018-09-18 2018-09-18 基板处理装置、半导体装置的制造方法以及记录介质
KR1020217000321A KR102512456B1 (ko) 2018-09-18 2018-09-18 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램

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