WO2020059070A1 - Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur et programme - Google Patents

Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur et programme Download PDF

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Publication number
WO2020059070A1
WO2020059070A1 PCT/JP2018/034764 JP2018034764W WO2020059070A1 WO 2020059070 A1 WO2020059070 A1 WO 2020059070A1 JP 2018034764 W JP2018034764 W JP 2018034764W WO 2020059070 A1 WO2020059070 A1 WO 2020059070A1
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WIPO (PCT)
Prior art keywords
pipe
control unit
gas
outliers
outlier
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Application number
PCT/JP2018/034764
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English (en)
Japanese (ja)
Inventor
一良 山本
秀元 林原
佳代子 屋敷
満 福田
嘉一郎 南
昭仁 吉野
一秀 浅井
Original Assignee
株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ filed Critical 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
Priority to PCT/JP2018/034764 priority Critical patent/WO2020059070A1/fr
Priority to JP2020547536A priority patent/JP6961834B2/ja
Publication of WO2020059070A1 publication Critical patent/WO2020059070A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.
  • Patent Literature 1 discloses an apparatus in which a piping heater is provided between a vaporizer (tank) and a processing chamber (or a processing furnace) to vaporize a raw material.
  • Patent Literature 2 discloses an apparatus that evaporates a raw material by providing a mist filter between a vaporizer (tank) and a processing chamber (or a processing furnace).
  • a gas vaporized as described above for example, when the inside of the pipe is pressurized in a pipe portion serving as a flow path of the gas, a transition to a liquefied state side of a vapor pressure curve corresponding to a material of the gas occurs. And the vaporized gas may be reliquefied. Thus, if the vaporized gas is again liquefied, there is a possibility that a trouble such as a film formation abnormality due to the generation of particles or a stop of the apparatus may be caused.
  • the present disclosure has an object to provide a technique capable of quickly and accurately detecting gas liquefaction in a pipe and avoiding occurrence of trouble due to gas liquefaction.
  • a main control unit that processes a substrate by executing a process recipe including at least a procedure of supplying a gas and a procedure of purging a gas, and a control unit that collects device data transmitted from the main control unit, Then, the control unit, during the execution of the process recipe, while collecting the pipe temperature and the pipe pressure of the monitoring target portion of the pipe serving as the gas flow path from the apparatus data, while controlling the pipe temperature or the pipe pressure.
  • calculate the saturation temperature with respect to the pipe pressure calculate the difference between the saturation temperature and the pipe temperature as an outlier, and determine the liquefaction region of the vapor pressure curve determined according to the gas source.
  • the main control unit extracts the outliers corresponding to, and within a predetermined period, the number of outliers that is the number of outliers corresponding to the liquefaction region of the vapor pressure curve, and the maximum outlier that is the maximum value of the outliers. Is configured to output, Technology is provided.
  • FIG. 1 is a side sectional view showing a substrate processing apparatus suitably used in one embodiment. It is a figure showing the functional composition of the control system used suitably for one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a main controller suitably used in one embodiment.
  • FIG. 2 is a diagram illustrating a functional configuration of an apparatus management controller suitably used in one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a device state monitoring unit suitably used in one embodiment.
  • FIG. 1 is a side sectional view showing a substrate processing apparatus suitably used in one embodiment. It is a figure showing the functional composition of the control system used suitably for one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a main controller suitably used in one embodiment.
  • FIG. 2 is a diagram illustrating a functional configuration of an apparatus management controller suitably used in one embodiment.
  • FIG. 3 is a diagram illustrating a functional configuration of a device state monitoring unit suitably used in one embodiment.
  • FIG. 2 is a diagram illustrating a functional configuration of a substrate processing unit (including a part to be monitored) suitably used in an embodiment; It is a flowchart which shows the procedure of the soft sensor value calculation process suitably used for one Embodiment.
  • FIG. 3 is an explanatory diagram showing a specific example of a vapor pressure curve suitably used in one embodiment. It is an explanatory view showing the Antoine constant management table suitably used for one embodiment, and the condition setting table for every part to be monitored.
  • FIG. 3 is an explanatory diagram (part 1) illustrating an action definition table suitably used in one embodiment;
  • FIG. 11 is an explanatory diagram (part 2) illustrating an action definition table suitably used in one embodiment.
  • a substrate processing apparatus (hereinafter, also simply referred to as an apparatus) 1 to which the present disclosure is applied includes a housing 2, and a lower part of a front wall 3 of the housing 2 can be maintained. Is provided, and the opening 4 is opened and closed by a front maintenance door 5.
  • a pod loading / unloading port 6 is opened on the front wall 3 of the casing 2 so as to communicate between the inside and the outside of the casing 2, and the pod loading / unloading port 6 is opened and closed by a front shutter 7.
  • a load port 8 is installed on the front side, and the load port 8 is configured to position the mounted pod 9.
  • the pod 9 is a hermetically sealed substrate transfer container, which is carried into and out of the load port 8 by an in-process transfer device (not shown).
  • a rotatable pod shelf 11 is provided at an upper portion in a substantially central portion in the front-rear direction in the housing 2, and the rotatable pod shelf 11 is configured to store a plurality of pods 9. .
  • the rotary pod shelf 11 includes a column 12 that is vertically erected and is intermittently rotated, and a plurality of stages of shelves 13 radially supported by the column 12 at respective positions of upper, middle, and lower stages.
  • the shelf 13 is configured to store the pod 9 in a state where a plurality of the pods 9 are placed.
  • a pod opener 14 is provided below the rotary pod shelf 11, and the pod opener 14 has a configuration on which the pod 9 can be placed and a lid of the pod 9 can be opened and closed.
  • a pod transport mechanism 15 is provided between the load port 8 and the rotary pod shelf 11 and the pod opener 14.
  • the pod transport mechanism 15 can hold the pod 9 and can move up and down, and can move forward and backward in the horizontal direction.
  • the pod 9 is transported between the load port 8, the rotary pod shelf 11, and the pod opener 14.
  • a sub-housing 16 is provided at a lower portion in a substantially central portion in the front-rear direction in the housing 2 over the rear end.
  • a pair of wafer loading / unloading ports 19 for loading / unloading a wafer (hereinafter, also referred to as a substrate) 18 into / from the sub-casing 16 is vertically arranged on the front wall 17 of the sub-casing 16 in two vertical stages.
  • the pod openers 14 are respectively provided for the upper and lower wafer loading / unloading ports 19.
  • the pod opener 14 includes a mounting table 21 on which the pod 9 is mounted, and an opening / closing mechanism 22 for opening and closing the lid of the pod 9.
  • the pod opener 14 is configured to open and close a wafer entrance of the pod 9 by opening and closing a lid of the pod 9 mounted on the mounting table 21 by an opening and closing mechanism 22.
  • the sub-housing 16 constitutes a transfer chamber 23 which is airtight from a space (pod transfer space) in which the pod transfer mechanism 15 and the rotary pod shelf 11 are provided.
  • a wafer transfer mechanism 24 is provided in the front area of the transfer chamber 23.
  • the substrate transfer mechanism 24 holds a required number (five in the drawing) of the wafer mounting plates 25 on which the substrates 18 are mounted.
  • the wafer mounting plate 25 is capable of linearly moving in the horizontal direction, rotatable in the horizontal direction, and being vertically movable.
  • the substrate transfer mechanism 24 is configured to load and unload the substrate 18 from and to the boat 26.
  • a standby unit 27 that accommodates and stands by the boat 26 is configured.
  • a vertical processing furnace 28 is provided above the standby unit 27, a vertical processing furnace 28 is provided.
  • the processing furnace 28 has a processing chamber (reaction chamber) 29 formed therein.
  • the lower end of the processing chamber 29 is a furnace port, and the furnace port is opened and closed by a furnace port shutter 31. ing.
  • a boat elevator 32 as an elevating mechanism for elevating the boat 26 is installed between the right end of the housing 2 and the right end of the standby section 27 of the sub-housing 16.
  • a seal cap 34 as a cover is horizontally mounted on an arm 33 connected to the elevator of the boat elevator 32.
  • the cover 34 vertically supports the boat 26, and transfers the boat 26 to the processing chamber 29.
  • the furnace port can be hermetically closed in a state where the furnace is charged.
  • the boat 26 is configured so that a plurality of (for example, about 50 to 125) substrates 18 are aligned in the center thereof and held in multiple stages in a horizontal posture.
  • a clean unit 35 is disposed at a position facing the boat elevator 32 side.
  • the clean unit 35 is configured by a supply fan and a dustproof filter for supplying a clean atmosphere or clean air 36 that is an inert gas. I have.
  • the pod 9 When the pod 9 is supplied to the load port 8, the pod loading / unloading port 6 is opened by the front shutter 7.
  • the pod 9 on the load port 8 is carried into the housing 2 through the pod carry-in / out port 6 by the pod transport device 15 and is placed on the designated shelf 13 of the rotary pod shelf 11.
  • the pod 9 After the pod 9 is temporarily stored on the rotary pod shelf 11, the pod 9 is transferred from the shelf 13 to one of the pod openers 14 by the pod transfer device 15 and transferred to the mounting table 21, or 8 and transferred directly to the mounting table 21.
  • the wafer loading / unloading port 19 is closed by the opening / closing mechanism 22, and the transfer chamber 23 is filled with the clean air 36 flowing therethrough. Since the transfer chamber 23 is filled with nitrogen gas as clean air 36, the oxygen concentration in the transfer chamber 23 is lower than the oxygen concentration inside the housing 2.
  • the pod 9 placed on the mounting table 21 has its opening-side end face pressed against the edge of the opening of the wafer loading / unloading port 19 on the front wall 17 of the sub-housing 16, and the lid is removed by the opening / closing mechanism 22. , The wafer entrance is opened.
  • the substrate 18 is taken out of the pod 9 by the substrate transfer mechanism 24, transferred to a notch aligning device (not shown), and aligned with the notch aligning device. Thereafter, the substrate transfer mechanism 24 carries the substrate 18 into the standby section 27 located behind the transfer chamber 23 and charges (charges) the boat 26.
  • the substrate transfer mechanism 24 that has transferred the substrate 18 to the boat 26 returns to the pod 9, and loads the next substrate 18 into the boat 26. While the substrate transfer mechanism 24 in one (upper or lower) pod opener 14 is loading the substrate 18 into the boat 26, the other (lower or upper) pod opener 14 is separated from the rotary pod shelf 11 by another. The pod 9 is transported and transferred by the pod transport device 15, and the opening of the pod 9 by the other pod opener 14 proceeds simultaneously.
  • a purge step in which the processing chamber 29 is replaced with an inert gas at this timing (after loading) is provided.
  • the processing chamber 29 is evacuated to a desired pressure (degree of vacuum) by a gas exhaust mechanism (not shown) such as a vacuum pump. Further, the processing chamber 29 is heated to a predetermined temperature by a heater driving unit (not shown) so as to have a desired temperature distribution.
  • a processing gas controlled at a predetermined flow rate is supplied by a gas supply mechanism (not shown), and the processing gas contacts the surface of the substrate 18 in the process of flowing through the processing chamber 29, and A predetermined process is performed. Further, the processing gas after the reaction is exhausted from the processing chamber 29 by the gas exhaust mechanism.
  • an inert gas is supplied from an inert gas supply source (not shown) by a gas supply mechanism, and the processing chamber 29 is replaced with the inert gas. Is returned to normal pressure (after-purge step). Then, the boat 26 is lowered by the boat elevator 32 via the seal cap 34.
  • the substrate 18 and the pod 9 are discharged to the outside of the housing 2 in a procedure reverse to the above description.
  • the unprocessed substrate 18 is further loaded into the boat 26, and the processing of the substrate 18 is repeated.
  • the control system 200 includes a main controller 201 as a main controller, a transport controller 211 as a transport controller, a process controller 212 as a processing controller, and a controller that monitors data. And a device management controller 215.
  • the device management controller 215 has a function of monitoring the state of the device 1 by monitoring the device data DD.
  • the control system 200 is housed in the device 1.
  • the apparatus data DD refers to data (hereinafter, also referred to as control parameters) relating to substrate processing such as a processing temperature, a processing pressure, and a flow rate of a processing gas when the apparatus 1 processes the substrate 18, and the quality of a manufactured product substrate.
  • control parameters data relating to substrate processing such as a processing temperature, a processing pressure, and a flow rate of a processing gas when the apparatus 1 processes the substrate 18, and the quality of a manufactured product substrate.
  • MFC mass flow controller
  • the apparatus data DD also includes raw waveform data as data at a specific interval (for example, one second) from the start to the end of the recipe, and process data such as statistic data of each step in the recipe.
  • the statistic data includes a maximum value, a minimum value, an average value, and the like.
  • event data for example, data indicating a maintenance history
  • indicating various device events when a recipe is not executed for example, when the substrate is not loaded in the device
  • the main controller 201 Since the main controller 201 is electrically connected to the transport controller 211 and the process controller 212, the main controller 201 can transmit and receive each device data DD, download and upload each file, and the like.
  • the main controller 201 is provided with a port through which a recording medium (for example, a USB key) as an external storage device is inserted and removed.
  • the OS corresponding to this port is installed in the main controller 201.
  • an external host computer 300 and management device 310 are connected to the main controller 201 via the communication network LAN2. Therefore, even when the substrate processing apparatus 1 is installed in a clean room, the host computer 300 and the management device 310 can be arranged in an office or the like outside the clean room.
  • the device management controller 215 is connected to the main controller 201 via a LAN line, and is configured to collect at least device data DD from the main controller 201.
  • the device management controller 215 will be described later in detail.
  • the transport system controller 211 is connected to a substrate transport system 211A mainly including the rotary pod shelf 11, the boat elevator 32, the pod transport device 15, the substrate transfer mechanism 24, the boat 26, and a rotation mechanism (not shown). ing.
  • the transport system controller 211 is configured to control transport operations of the rotary pod shelf 11, the boat elevator 32, the pod transport device 15, the substrate transfer mechanism 24, the boat 26, and a rotation mechanism (not shown). .
  • the transport system controller 211 is configured to control the transport operations of the boat elevator 32, the pod transport device 15, and the substrate transfer mechanism 24, respectively.
  • the process controller 212 includes a temperature controller 212a, a pressure controller 212b, a gas flow controller 212c, and a sequencer 212d.
  • the temperature controller 212a, the pressure controller 212b, the gas flow controller 212c, and the sequencer 212d constitute a sub-controller and are electrically connected to the process system controller 212. Uploading is possible. Although the process controller 212 and the sub-controller are shown separately, they may be integrated.
  • a heating mechanism 212A mainly composed of a heater, a temperature sensor, and the like is connected to the temperature controller 212a.
  • the temperature controller 212a is configured to control the temperature inside the processing furnace 28 by controlling the temperature of the heater of the processing furnace 28.
  • the temperature controller 212a is configured to perform switching (on / off) control of the thyristor, and to control electric power supplied to the heater element wire.
  • a gas exhaust mechanism 212B mainly composed of a pressure sensor, an APC valve as a pressure valve, and a vacuum pump is connected to the pressure controller 212b.
  • the pressure controller 212b controls the opening degree of the APC valve and the switching (on / off) of the vacuum pump based on the pressure value detected by the pressure sensor so that the pressure in the processing chamber 29 becomes a desired pressure at a desired timing. It is configured to control.
  • the gas flow controller 212c is configured by an MFC as a flow controller.
  • the sequencer 212d is configured to control the supply and stop of the gas from the processing gas supply pipe and the purge gas supply pipe by opening and closing the valve 212D.
  • the process controller 212 having such a configuration is configured to control the MFC 212c and the valve 212D so that the flow rate of the gas supplied to the processing chamber 29 becomes a desired flow rate at a desired timing.
  • the main controller 201, the transport system controller 211, the process system controller 212, and the device management controller 215 according to the present embodiment can be realized using an ordinary computer system without using a dedicated system. For example, by installing the program from a recording medium (such as a USB key) that stores the program for executing the above-described process in a general-purpose computer, each controller that executes a predetermined process can be configured.
  • a recording medium such as a USB key
  • the main controller 201 includes an operation display unit 227 including a main controller control unit 220, a hard disk 222 as a main control storage unit, a display unit for displaying various information, and an input unit for receiving various instructions from an operator. It is configured to include a transmission / reception module 228 as a main controller communication unit that communicates with inside and outside.
  • the main controller 220 includes a CPU (Central Processing Unit) 224 as a processing unit and a memory (RAM, ROM, etc.) 226 as a temporary storage unit, and is configured as a computer having a clock function (not shown). ing.
  • CPU Central Processing Unit
  • the hard disk 222 includes recipe files such as recipes in which processing conditions and processing procedures of the substrate are defined, a control program file for executing these recipe files, a parameter file in which parameters for executing the recipes are defined, Further, in addition to an error processing program file and an error processing parameter file, various screen files including an input screen for inputting process parameters, various icon files, and the like (all not shown) are stored.
  • the operation display unit 227 is configured to display an operation screen for operating the device 1.
  • the operation display unit 227 displays information based on device data DD generated in the substrate processing apparatus 1 via the operation screen on the operation screen.
  • the operation screen of the operation display unit 227 is, for example, a touch panel using liquid crystal.
  • the operation display unit 227 receives input data (input instruction) of the operator from the operation screen and transmits the input data to the main controller 201. Further, the operation display unit 227 provides an instruction to execute an arbitrary substrate processing recipe (hereinafter, also referred to as a process recipe) among a plurality of recipes stored in the hard disk 222 or a recipe developed in the memory (RAM) 226 or the like. Control instruction) and transmits it to the main controller 220.
  • a switching hub or the like is connected to the main controller communication unit 228, and the main controller 201 communicates with the external computer 300 and other controllers (211 212, and 215) in the apparatus 1 and the like via a network. Is configured to perform transmission and reception.
  • the main controller 201 also transmits device data DD such as the status of the device 1 to an external host computer 300, for example, a host computer via a network (not shown).
  • device data DD such as the status of the device 1
  • an external host computer 300 for example, a host computer via a network (not shown).
  • the substrate processing operation of the apparatus 1 is controlled by the control system 200 based on each recipe file, each parameter file, and the like stored in the main controller storage unit 222.
  • the hardware configuration of the device management controller 215 is similar to that of the main controller 201 described above.
  • the device management controller 215 can be realized by using a normal computer system without using a dedicated system like the main controller 201.
  • the device management controller 215 is connected to the main controller 201 via a LAN line, collects device data DD from the main controller 201, processes the stored device data DD, graphs the processed device data DD, and can display the processed data on the operation display unit 227. is there. Further, the device management controller 215 has a device state monitoring function, is configured to diagnose the operating state of the device 1 by using device data DD collected from inside and outside the device 1 and output the diagnosis result. I have.
  • the device management controller 215 includes a communication unit 215a for transmitting and receiving device data DD to and from the main controller 201, a screen display unit 215b, a screen display control unit 215c, and a storage unit 215d for storing various data. , And a device state monitoring unit 215e.
  • the screen display unit 215b is configured to display the function of the device management controller 215. Further, instead of the screen display unit 215b, the display may be performed by using the operation display unit 227 of the main controller 201, or may be replaced by an operation terminal or the like.
  • the screen display control unit 215c controls various data (for example, device data DD) into data for screen display, and displays the data on the screen display unit 215b or the operation display unit 227.
  • the display is configured to be displayed on the operation display unit 227 instead of the screen display unit 215b.
  • the storage unit 215d stores all device data DD from the main controller 201 while the process recipe is being executed, and also stores device data DD such as event data while the process recipe is not being executed. Acts as a database.
  • Various programs executed by the device management controller 215 are stored in the storage unit 215d. For example, the device status monitoring program, the data analysis program, and the like are executed when the device management controller 215 is activated. Note that the monitoring content or the diagnostic condition definition data used for the program may also be stored in the storage unit 215d.
  • the device status monitoring unit 215e has a device status monitoring program in a memory (for example, the storage unit 215d) and executes a device status monitoring function. As shown in FIG. 6, the device state monitoring unit 215e includes a condition determination unit 311, a storage unit 313, a search unit 314, and a diagnosis unit 315.
  • the condition determination unit 311 performs control to determine whether or not it is time for the diagnosis unit 315 to perform processing. Specifically, when a predetermined condition is satisfied, the condition determination unit 311 determines that the timing at which the diagnosis unit 315 should perform processing has come. Details of the predetermined condition will be described later.
  • the storage unit 313 performs control to store all device data DD supplied via the communication unit 215a in the storage unit 215d.
  • the device data DD stored in the storage unit 215d includes at least data of a pipe temperature and a pipe pressure of a monitoring target portion, which will be described in detail later.
  • the storage unit 313 controls to store various data (for example, outliers described in detail later) generated by the diagnosis unit 315 in the storage unit 215d.
  • the search unit 314 searches the various device data DD stored in the storage unit 215d for device data DD (particularly, data of a pipe temperature and a pipe pressure) to be processed by the diagnosis unit 315, and searches for the diagnosis unit 315. Control to supply to. Also, the search unit 314 searches various data (for example, outliers described in detail later) generated by the diagnosis unit 315 as necessary, and performs control to supply the data to the diagnosis unit 315.
  • the diagnosis unit 315 starts the diagnosis when the condition determination unit 311 notifies that the processing should be performed. Then, the diagnosis unit 315 notifies the main controller 201 of the diagnosis data as a result of the diagnosis via the communication unit 215a.
  • the diagnostic unit 315 receives piping temperature and piping pressure data as processing target device data DD from the search unit 314, and based on the piping pressure. It is configured to calculate a saturation temperature and calculate a difference between the received pipe temperature and the calculated saturation temperature as an outlier. Then, the diagnosis unit 315 accumulates the calculated outlier in the storage unit 215d, acquires the maximum value of the outlier within the predetermined period as the maximum outlier, and liquefies the vapor pressure curve within the predetermined period. The number of outliers corresponding to the area is obtained as an outlier. The maximum outlier and the number of outliers are output as soft sensor values and notified to the main controller 201.
  • diagnosis unit 315 obtains the maximum outlier and the number of outliers, compares at least one of them with a predetermined threshold, generates an alarm when the threshold is exceeded, and notifies the main controller 201. May be configured.
  • the vapor pressure curve represented by temperature on the vertical axis and pressure on the horizontal axis is a curve determined in advance by the material of the vaporized gas.
  • the left side of this curve is the liquefaction region, and the right side of the curve is the vaporization region.
  • the temperature and the pressure on the vapor pressure curve are referred to as a saturation temperature and a saturation pressure, respectively.
  • the saturation temperature in the present embodiment is defined as a temperature determined by the pressure (the pipe pressure in the present embodiment). I do.
  • the predetermined processing step is a substrate processing step (here, a film forming step), which is one of the semiconductor device manufacturing steps.
  • the substrate processing step includes at least a carry-in step, a film-forming step, and a carry-out step.
  • the main controller 201 issues an instruction to drive the substrate transfer mechanism 24 to the transport system controller 211. Then, while following instructions from the transport system controller 211, the substrate transfer mechanism 24 starts transfer processing of the substrate 18 from the pod 9 on the transfer stage 21 as the mounting table to the boat 26. This transfer processing is performed until the loading (wafer charging) of all the planned substrates 18 into the boat 26 is completed.
  • the processing chamber 29 is evacuated by a vacuum exhaust device such as a vacuum pump so as to have a predetermined film forming pressure (degree of vacuum) while following instructions from the pressure control unit 212b.
  • the processing chamber 29 is heated by a heater to a predetermined temperature while following instructions from the temperature control unit 212a.
  • the rotation of the boat 26 and the substrate 18 by the rotation mechanism is started while following instructions from the transport system controller 211.
  • a predetermined gas for example, a source gas obtained by vaporizing a liquid source
  • a predetermined process for example, a film forming process
  • the boat 26 holding the processed substrate 18 is cooled very effectively by the clean air 36 blown out from the clean unit 35.
  • the processed substrate 18 is removed from the boat 26 (wafer discharge) and transferred to the pod 9, and then the new unprocessed substrate 18 is transferred to the boat 26. Is performed.
  • a predetermined type of gas is flow-adjusted by the MFC 212c, and is passed through a pipe 212E serving as a gas flow path.
  • the substrate 18 is supplied to a processing chamber (reaction chamber) 29 into which the substrate 18 has been carried.
  • the supplied gas for example, there is a first element-containing gas which is a raw material gas obtained by vaporizing a liquid raw material.
  • a second element-containing gas that is a reaction gas or a reforming gas
  • an inert gas that acts as a purge gas, or the like can be supplied to the reaction chamber 29.
  • a detector that detects a change in device data in the part to be monitored is set in advance on the pipe 212E as the part to be monitored, and in FIG. 7, a detector (piping 212E) is set to the part set as the monitoring target.
  • a temperature sensor TG1 and a pressure sensor PG1 are provided. When a plurality of locations are set as the monitoring target, a temperature sensor TG1 and a pressure sensor PG1 are respectively disposed.
  • the site to be monitored may be either upstream or downstream of the valve 212D. Therefore, the valve 212D is located before and after the part to be monitored (that is, at least one of the front side and the rear side).
  • the temperature sensor TG1 is configured to detect an actual measured value of the temperature of the gas flowing in the pipe 212E as the pipe temperature of the monitoring target portion.
  • the pressure sensor PG1 is configured to detect an actual measured value of the gas pressure in the pipe 212E as a pipe pressure for a monitoring target portion. Therefore, in the part to be monitored, the pipe temperature and the pipe pressure for the same gas can be detected at the same timing.
  • the piping temperature, which is the detection result of the temperature sensor TG1, and the piping pressure, which is the detection result of the pressure sensor PG1, are output to the main controller 201 as device data DD.
  • a gas obtained by heating and vaporizing a liquid material such as HCD (hexachlorodisilane) may be sent into the reaction chamber 29 as a raw material gas flowing in the pipe 212E.
  • HCD hexachlorodisilane
  • the temperature of the vaporized gas changes to the liquefied state side of the vapor pressure curve determined by the raw material (HCD) of the gas, and this vaporization occurs.
  • the gas may be re-liquefied. It is known that when the liquefied gas is sent into the reaction chamber 29 and adheres to the substrate 18, it forms ball-shaped particles. That is, if the vaporized gas is again liquefied, there is a possibility that a trouble such as a film formation abnormality due to the generation of particles or a stop of the apparatus may be caused.
  • the device management controller 215 uses the device data DD from the temperature sensor TG1 and the pressure sensor PG1 disposed on the pipe 212E (that is, the pipe temperature and the pipe pressure for the monitoring target part), and Perform the process described.
  • the device management controller 215 performs a process of calculating a soft sensor value as shown in FIG. First, the diagnosis unit 315 sets the maximum outlier T Out and the number of outliers F Count as soft sensor values to “0” as initial values, respectively (S101).
  • the storage unit 313 causes the storage unit 215d to store the device data DD supplied from the main controller 201 via the communication unit 215a during the execution of the process recipe.
  • the device data DD stored in the storage unit 215d includes a pipe temperature that is a detection result of the temperature sensor TG1 and a pipe pressure that is a detection result of the pressure sensor PG1.
  • the collection of the pipe temperature and the pipe pressure by the device management controller 215 is performed at a predetermined cycle (for example, every 0.1 second).
  • the condition determination unit 311 monitors the collected pipe temperature and pipe pressure.
  • the monitoring target is the pipe temperature and the pipe pressure of the pipe 212E (for each part when a plurality of parts are set).
  • the monitoring timing is a certain period after the valves 212D provided before and after the pipe 212E are opened.
  • the condition determination unit 311 determines that the collection condition is satisfied when the valve 212D is in the open state and any one of the pipe temperature and the pipe pressure changes during a certain period after the valve 212D is opened. (S102). If there is no change in the piping temperature and the piping pressure to be monitored (if it is determined that there is no change), the condition determining unit 311 waits until the next cycle (S103).
  • condition determination unit 311 determines that the collection conditions are satisfied in S102
  • diagnosis unit 315 of the device management controller 215 performs the following processing (S104).
  • the diagnosis unit 315 calculates the saturation temperature T TH of the gas flowing through the pipe 212E when the collection condition is satisfied, that is, when either the pipe temperature or the pipe pressure changes.
  • A, B, and C are constants determined for each substance (Antoine constant), P is the vapor pressure, and T is the temperature.
  • the above equation is modified and used from the following viewpoints.
  • (1) In order to reduce the processing cost of index calculation, the input is pressure and the saturation temperature is obtained.
  • (2) A constant D for adjustment is prepared because it is necessary to make the pressure deviate from the theoretical value and to wear a getter for converting the absolute pressure and the vapor pressure.
  • T TH is the saturation temperature
  • a and B are the Antoine constants
  • C is the sum of the Antoine constant and the adjusted value of the temperature
  • D is the adjusted value of the pressure
  • P is the piping pressure of the monitored part.
  • the diagnosis unit 315 calculates the saturation temperature T TH of the gas flowing through the monitoring target using the above equation based on the pipe pressure at that time. calculate.
  • the diagnosis unit 315 After calculating the saturation temperature T TH , the diagnosis unit 315 then calculates the difference between the calculated saturation temperature T TH and the pipe temperature when any of the pipe temperature or the pipe pressure changes from the saturation temperature T TH. Is calculated as an outlier T Diff .
  • the diagnosis unit 315 determines whether or not the outlier T Diff is negative, that is, whether or not the outlier T Diff matches the gas liquefaction condition (S105). Specifically, it is determined whether or not the acquired outlier T Diff corresponds to the liquefaction region in the vapor pressure curve (FIG. 9). Then, it is determined that the outlier T Diff corresponding to the liquefaction region meets the liquefaction condition. If the liquefaction condition is not met, the pipe temperature and pipe pressure to be monitored are waited for the next cycle (S103).
  • the diagnosis unit 315 determines the outlier number F Count which is the result of counting the number of outliers T Diff corresponding to the liquefaction region of the vapor pressure curve. "+1" is added. The diagnosis unit 315 extracts and counts the pipe temperature that has changed on the liquefaction side of the vapor pressure curve.
  • the diagnosis unit 315 determines whether or not the acquired outlier T Diff is larger than the set maximum outlier T Out , that is, whether or not the outlier exceeding the maximum outlier T Out has occurred (S107). . If the maximum outlier T Out is exceeded, the maximum outlier T Out is updated with the acquired outlier T Diff (S108). That is, the maximum value of the acquired outlier T Diff is set as the maximum outlier T Out . If it does not exceed the maximum outlier T Out , the process waits for the pipe temperature and pipe pressure to be monitored until the next cycle (S103).
  • the diagnostic unit 315 performs the above arithmetic processing until the pipe temperature and pipe pressure obtained in each cycle until a certain period (that is, a predetermined period) after the valve 212D is opened (S109). It is repeated every time (S110).
  • the diagnosis unit 315 determines that the outlier T Diff corresponding to the liquefaction region of the vapor pressure curve within the predetermined period (that is, the vapor The outlier number F Count that is the number of outliers T Diff ) that satisfies the liquefaction conditions defined by the pressure curve and the maximum outlier T Out that is the maximum of the outliers T Diff are output as soft sensor values ( S111).
  • the output destination of the soft sensor value is the main controller 201.
  • FIG. 9 a specific monitoring example is shown in FIG.
  • out of a plurality of outliers T Diff acquired within a predetermined period see a black circle in the figure
  • three outliers T Diff enter the liquefaction region of the vapor pressure curve. I have.
  • These three outliers T Diff have a difference from the vapor pressure curve (saturation temperature) at a predetermined pressure of 10 ° C., 50 ° C., and 30 ° C., respectively.
  • the maximum outlier T Out since the distance from the vapor pressure curve to the measured temperature is used as an index, it is possible to capture a sudden change in the state of liquefaction. Further, even if the gas flowing through the monitoring target portion instantaneously becomes a theoretical liquefied state, it often does not actually appear as ball particles immediately. Therefore, for example, by using the accumulated value of the out-of-order number F Count as a management index, it is possible to capture a state of reliquefaction that is likely to appear as particles.
  • the number of consecutive outliers T Diff corresponding to the liquefaction region can be added to one of the soft sensor values as the number of consecutive outliers.
  • the difference between the measured value of any device data and the saturation temperature Tth becomes negative, and the re-liquefaction phenomenon of the vaporized gas occurs clearly, the accumulated value Even before the threshold value, the occurrence of an abnormality (a pipe temperature drop error) can be detected.
  • the calculation of the saturation temperature T TH required for outputting the soft sensor value uses the parameters (constants) of A, B, C, and D as described above.
  • A, B, and C are constants depending on the substance, and when the liquid material used for film formation is different, it is necessary to change the value to a value corresponding to the material.
  • A, B, C, and D it may be necessary to make corrections as necessary due to differences in conditions such as the temperature difference and pressure between the pipe surface and the pipe, and whether the pressure is gauge pressure or absolute pressure. possible.
  • the device management controller 215 can select at least the constants A, B, and C, and preferably all of the constants A, B, C, and D, according to the raw material of the gas flowing through the monitoring target portion. Is configured. Further, the device management controller 215 may be capable of selecting the constants A, B, C, and D according to the setting position of the monitoring target part.
  • constants A, B, C, and D can be selected for each part to be monitored.
  • the device management controller 215 prepares an Antoine constant management table and a condition setting table for each part to be monitored as shown in FIG.
  • the Antoine constant management table holds the Antoine constant values for each raw material in a table format, and is stored and held in the storage unit 215d in advance, for example.
  • the device management controller 215 displays the Antoine constant management table and the condition setting table for each part to be monitored on a screen, and sets the constants A, B, and C to be applied to each part to be monitored.
  • And D are selected from the Antoine constant management table, and the selected constants A, B, C, and D are set in corresponding locations in the condition setting table for each monitoring target part.
  • the device management controller 215 calculates the soft sensor value while referring to the conditions on the table set as described above.
  • the constants A, B, C, and D can be appropriately selected for each monitoring target portion according to the raw material of the gas flowing through the portion.
  • the Antoine constant is taken as an example, but the temperature correction itself or the pressure correction itself may be determined based on another theoretical chemical formula.
  • the device management controller 215 calculates and outputs the soft sensor value
  • the monitoring action process described below can be performed using the soft sensor value.
  • the monitoring action processing is roughly classified into an alarm notification processing and an automatic maintenance recipe execution processing.
  • the device management controller 215 After calculating the soft sensor value, the device management controller 215 compares any one of the outliers F Count and the maximum outlier T Out that constitute the soft sensor value with a predetermined threshold value, and The liquefaction state of the gas in the pipe that has become is determined. Then, when the threshold value is exceeded, an alarm is generated to notify the fact that the gas in the pipe may be liquefied.
  • the device management controller 215 For example, if the device management controller 215, the maximum outliers T Out capable of capturing a change in the state as catastrophically liquefied threshold management, was the largest outliers T Out exceeding the threshold, the pipe It is determined that there is a possibility that the gas of the above is liquefied. Then, the device management controller 215 generates an alarm for the main controller 201. In response to this, the main controller 201 outputs an alarm through the operation display unit 227, so that the operator or the like can check the status of the apparatus 1 and perform predetermined error processing such as performing maintenance as necessary. Can be performed.
  • the specific mode of the alarm is not particularly limited.
  • the threshold management may be performed on the out-of-range number F Count .
  • the cumulative value of the out-of-order number F Count is managed, and when the cumulative value exceeds a threshold value (a certain amount), an alarm is output. It is possible to appropriately cope with the situation of high reliquefaction.
  • the main controller 201 When receiving the soft sensor value output from the device management controller 215, the main controller 201 performs the following processing using the out-of-order number F Count included in the soft sensor value.
  • the main controller 201 previously stores, for example, an action definition table as shown in FIG. 11 and FIG.
  • the action definition table links (associates) a monitoring target part, a soft sensor value (particularly, the number of outliers F Count ) of the part, and a recipe specifying an action to be performed on the part with each other. is there.
  • the main controller 201 When the main controller 201 receives a soft sensor value including the number of deviations F Count for each monitoring target from the device management controller 215, the main controller 201 adds the notified number of deviations F Count to the cumulative value of the number of deviations F Count in the action definition table. Add Count . After updating the cumulative value, the main controller 201 compares the updated cumulative value with a threshold registered in the action definition table.
  • the main controller 201 sends an action definition table to the part after the end of the currently executing process recipe. Execute the maintenance recipe registered in.
  • the main controller 201 determines that liquefaction has been detected, and to execute a cleaning recipe registered in the action definition table as a maintenance recipe that defines an action to be performed in that case. Then, by executing the cleaning recipe, the main controller 201 causes an inert gas such as N 2 gas to flow to the tank outlet, which is one of the monitoring target parts, to remove the liquefied raw material (HCD or the like). Configured to remove.
  • the maintenance recipe that defines the action to be performed is not limited to the above-described cleaning recipe. For example, parts (pump) replacement, maintenance recipe execution Maintenance (other actions) such as the above may be performed.
  • the maintenance recipe registered in the action definition table is automatically registered so that ball particles do not adhere to the substrate 18. It can be executed.
  • the main controller 201 After performing the action, the main controller 201 resets the accumulated value of the action definition table for the part where the action was performed to zero. That is, after executing the maintenance recipe, the main controller 201 initializes the corresponding accumulated value in the action definition table. This makes it possible to appropriately cope with the situation where the gas can be liquefied again.
  • the action defined in the action definition table may be executed when the number of out-of-orders F Count occurs even once.
  • the number of consecutive outliers T Diff corresponding to the liquefaction region is held in the action definition table as a continuous count, and when only the cumulative value of the continuous count continues to increase, the action definition The action specified in the table may be executed.
  • the main controller 201 determines that the device data DD (Including the pipe temperature and the pipe pressure of the monitoring target portion) may be output to the device management controller 215.
  • an abnormality in the pipe which is a factor that generates particles such as ball particles, is quantitatively expressed, and a sudden change or a cumulative value of the numerical value is monitored, so that an eye in the substrate processing apparatus can observe the change. Enables detection of invisible abnormal conditions.
  • the present embodiment it is possible to quickly and accurately detect the liquefied state of the gas in the pipe, and to avoid the occurrence of a trouble due to the liquefied gas.
  • the substrate processing apparatus and the semiconductor device manufacturing method used in the semiconductor manufacturing process have been mainly described.
  • the present invention is not limited to these.
  • a liquid crystal display (LCD) The present invention is also applicable to a substrate processing apparatus for processing a glass substrate, such as an apparatus, and a method of manufacturing the same.
  • any method may be used as long as the liquid material is vaporized and supplied to a processing chamber (reaction chamber) 29 in a processing furnace 28 to form a film on the surface of the substrate (wafer) 18.
  • the type of film to be formed is not particularly limited.
  • the film forming process performed in the film forming step includes, for example, a process for forming a CVD (chemical vapor deposition), a PVD (Physical Vapor Deposition), an oxide film, a nitride film, a process for forming a metal-containing film, and the like.
  • CVD chemical vapor deposition
  • PVD Physical Vapor Deposition
  • oxide film oxide film
  • nitride film oxide film
  • metal-containing film a metal-containing film
  • the substrate processing apparatus for performing the film forming process and the method for manufacturing the semiconductor device have been described.
  • the present invention is not limited to these.
  • another substrate processing apparatus Exposure apparatus, lithography apparatus, coating apparatus, CVD apparatus using plasma, etc.
  • Exposure apparatus, lithography apparatus, coating apparatus, CVD apparatus using plasma, etc. can also be applied.

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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

La présente invention est configurée avec : une unité de commande principale qui exécute une recette de traitement comprenant au moins une étape pour fournir un gaz et une étape pour purger le gaz, et traite un substrat ; et une unité de commande qui collecte des données de dispositif transmises à partir de l'unité de commande principale, pendant l'exécution de la recette de traitement, l'unité de commande est configurée pour calculer une température de saturation pour une pression de tuyau lorsqu'une valeur de l'une quelconque parmi une température de tuyau ou la pression de tuyau change, tout en collectant, parmi les données de dispositif, la température de tuyau et la pression de tuyau pour une partie à surveiller dans un tuyau qui devient un passage d'écoulement du gaz, calculer, en tant que valeur aberrante, la différence entre la température de saturation et la température de tuyau, extraire une valeur aberrante correspondant à une zone liquéfiée d'une courbe de pression de vapeur déterminée en fonction d'une matière première du gaz, et délivrer, à l'unité de commande principale, un nombre d'observations aberrantes qui est le nombre de valeurs aberrantes correspondant à la zone liquéfiée de la courbe de pression de vapeur et une valeur aberrante maximale qui est une valeur maximale de la valeur aberrante dans une période prescrite.
PCT/JP2018/034764 2018-09-20 2018-09-20 Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur et programme WO2020059070A1 (fr)

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JPH1163400A (ja) * 1997-08-15 1999-03-05 Fujikin:Kk 液化材料ガスの流路閉塞防止方法およびその装置
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