DE602005017310D1 - Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist - Google Patents
Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zistInfo
- Publication number
- DE602005017310D1 DE602005017310D1 DE602005017310T DE602005017310T DE602005017310D1 DE 602005017310 D1 DE602005017310 D1 DE 602005017310D1 DE 602005017310 T DE602005017310 T DE 602005017310T DE 602005017310 T DE602005017310 T DE 602005017310T DE 602005017310 D1 DE602005017310 D1 DE 602005017310D1
- Authority
- DE
- Germany
- Prior art keywords
- abnormity
- semiconductor manufacturing
- manufacturing device
- zist
- predicting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004590 computer program Methods 0.000 title 1
- 238000001514 detection method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
- G05B23/0224—Process history based detection method, e.g. whereby history implies the availability of large amounts of data
- G05B23/0227—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions
- G05B23/0235—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions based on a comparison with predetermined threshold or range, e.g. "classical methods", carried out during normal operation; threshold adaptation or choice; when or how to compare with the threshold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004381364A JP4607576B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体製造装置 |
JP2005031111A JP4887628B2 (ja) | 2005-02-07 | 2005-02-07 | 半導体製造装置、コンピュータプログラム及び記憶媒体 |
JP2005038413A JP4607618B2 (ja) | 2005-02-15 | 2005-02-15 | 成膜装置、コンピュータプログラム及び記憶媒体 |
JP2005039869A JP4882239B2 (ja) | 2005-02-16 | 2005-02-16 | 半導体製造装置、コンピュータプログラム及び記憶媒体 |
PCT/JP2005/023617 WO2006070689A1 (ja) | 2004-12-28 | 2005-12-22 | 半導体製造装置、当該半導体製造装置における異常の検出、異常の原因の特定或いは異常の予測を行う方法、並びに当該方法を実施するためのコンピュータプログラムを記録した記憶媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005017310D1 true DE602005017310D1 (de) | 2009-12-03 |
Family
ID=36614806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005017310T Active DE602005017310D1 (de) | 2004-12-28 | 2005-12-22 | Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist |
Country Status (6)
Country | Link |
---|---|
US (1) | US7751921B2 (de) |
EP (1) | EP1845553B1 (de) |
KR (1) | KR101208295B1 (de) |
DE (1) | DE602005017310D1 (de) |
TW (1) | TW200644121A (de) |
WO (1) | WO2006070689A1 (de) |
Families Citing this family (46)
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JP2007123643A (ja) * | 2005-10-31 | 2007-05-17 | Matsushita Electric Ind Co Ltd | 成膜装置、成膜方法、成膜装置のモニタリングプログラムおよびその記録媒体 |
CN101213640B (zh) * | 2006-02-07 | 2010-08-04 | 东京毅力科创株式会社 | 基板处理装置的控制装置及基板处理装置的控制方法 |
JP4326570B2 (ja) * | 2007-04-17 | 2009-09-09 | 東京エレクトロン株式会社 | ヒータ素線の寿命予測方法,熱処理装置,記録媒体,ヒータ素線の寿命予測処理システム |
US8145337B2 (en) * | 2007-05-04 | 2012-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methodology to enable wafer result prediction of semiconductor wafer batch processing equipment |
CN101330030B (zh) * | 2007-06-21 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | 检测数据中异常点的去除方法 |
US9416448B2 (en) * | 2008-08-29 | 2016-08-16 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
JP5107185B2 (ja) | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US9297072B2 (en) | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
US9181097B2 (en) * | 2009-02-19 | 2015-11-10 | Sundew Technologies, Llc | Apparatus and methods for safely providing hazardous reactants |
WO2010110787A1 (en) * | 2009-03-25 | 2010-09-30 | Hewlett-Packard Development Company, L.P. | Power distribution unit-device correlation |
FR2981474B1 (fr) * | 2011-10-17 | 2013-12-27 | Alstom Technology Ltd | Procede de detection preventive d'une panne d'un appareil, programme d'ordinateur, installation et module de detection preventive d'une panne d'un appareil |
JP6159536B2 (ja) * | 2012-03-05 | 2017-07-05 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム |
EP2700920B1 (de) * | 2012-08-23 | 2016-06-22 | ams AG | Lichtsensorsystem und Verfahren zur Verarbeitung von Lichtsensorsignalen |
US9512519B2 (en) * | 2012-12-03 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Atomic layer deposition apparatus and method |
JP2014194966A (ja) * | 2013-03-28 | 2014-10-09 | Tokyo Electron Ltd | 処理方法及び処理装置 |
WO2014177902A1 (en) * | 2013-04-30 | 2014-11-06 | Siemens Aktiengesellschaft | Method for monitoring a pumping device |
JP6262115B2 (ja) | 2014-02-10 | 2018-01-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US9766136B2 (en) * | 2014-06-09 | 2017-09-19 | Tower Semiconductor Ltd. | Apparatus, system and method of detecting leakage in a chamber |
JP6151227B2 (ja) * | 2014-08-25 | 2017-06-21 | 株式会社東芝 | 異常検知システム及び半導体デバイスの製造方法 |
EP3043159B1 (de) | 2015-01-08 | 2019-12-18 | ams AG | Verfahren zur Verarbeitung von Lichtsensorsignalen und Lichtsensorsystem |
US20190257685A1 (en) * | 2015-06-24 | 2019-08-22 | Kim Lewis | Transit Time Ultrasonic Meter Diagnostic System Displays |
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
JP6548586B2 (ja) | 2016-02-03 | 2019-07-24 | 東京エレクトロン株式会社 | 成膜方法 |
JP6584350B2 (ja) * | 2016-03-17 | 2019-10-02 | 東京エレクトロン株式会社 | 制御装置、基板処理システム、基板処理方法及びプログラム |
JP6645993B2 (ja) | 2016-03-29 | 2020-02-14 | 株式会社Kokusai Electric | 処理装置、装置管理コントローラ、及びプログラム並びに半導体装置の製造方法 |
CN112652557A (zh) | 2016-03-29 | 2021-04-13 | 株式会社国际电气 | 处理装置、装置管理控制器、计算机可读的记录介质、半导体器件的制造方法以及显示方法 |
WO2018038892A1 (en) | 2016-08-26 | 2018-03-01 | Applied Materials, Inc. | Self-healing semiconductor wafer processing |
JP2018041217A (ja) * | 2016-09-06 | 2018-03-15 | 東京エレクトロン株式会社 | 異常検知方法及び半導体製造装置 |
JP6733516B2 (ja) | 2016-11-21 | 2020-08-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
WO2018168873A1 (ja) * | 2017-03-17 | 2018-09-20 | 株式会社フジキン | 流体制御機器の動作分析システム、方法、及びコンピュータプログラム |
JP6785699B2 (ja) * | 2017-03-28 | 2020-11-18 | 東京エレクトロン株式会社 | 基板処理システム及び制御装置 |
JP6586440B2 (ja) * | 2017-07-11 | 2019-10-02 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
CN112740358B (zh) * | 2018-09-18 | 2024-03-08 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法以及记录介质 |
JP2020176555A (ja) * | 2019-04-18 | 2020-10-29 | 株式会社島津製作所 | 真空ポンプシステム |
JP7345353B2 (ja) * | 2019-10-25 | 2023-09-15 | 東京エレクトロン株式会社 | 故障検知システム及び故障検知方法 |
CN113811634B (zh) * | 2019-12-17 | 2023-04-04 | 株式会社爱发科 | 测定异常检测装置及测定异常检测方法 |
JP7366775B2 (ja) * | 2020-01-30 | 2023-10-23 | 株式会社Screenホールディングス | データ処理方法、データ処理装置およびプログラム |
KR102455758B1 (ko) | 2020-01-30 | 2022-10-17 | 가부시키가이샤 스크린 홀딩스 | 데이터 처리 방법, 데이터 처리 장치 및 기억 매체 |
JP7230877B2 (ja) * | 2020-04-20 | 2023-03-01 | 株式会社Sumco | エピタキシャルウェーハの製造システム及びエピタキシャルウェーハの製造方法 |
CN113721557B (zh) * | 2020-05-25 | 2022-12-20 | 中国石油化工股份有限公司 | 基于关联参数的石化装置运行工艺参数监测方法及装置 |
JP7413159B2 (ja) * | 2020-06-23 | 2024-01-15 | 東京エレクトロン株式会社 | 情報処理装置、プログラム及び監視方法 |
JP7467261B2 (ja) * | 2020-06-30 | 2024-04-15 | 東京エレクトロン株式会社 | 異常検知装置、半導体製造装置及び異常検知方法 |
CN113189967B (zh) * | 2021-05-06 | 2022-05-27 | 郑州轻工业大学 | 一种半导体制程批间控制系统的控制性能诊断方法 |
US20230113095A1 (en) * | 2021-10-13 | 2023-04-13 | Applied Materials, Inc. | Verification for improving quality of maintenance of manufacturing equipment |
JP2023103123A (ja) * | 2022-01-13 | 2023-07-26 | 株式会社Screenホールディングス | 適正判定装置および適正判定方法 |
JP2024100608A (ja) * | 2023-01-16 | 2024-07-26 | 株式会社Kokusai Electric | 温度制御方法、半導体装置の製造方法、温度制御システム、基板処理装置、及び、プログラム |
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JPH02205019A (ja) | 1989-02-02 | 1990-08-14 | Hitachi Ltd | プラズマ処理装置およびその診断方法 |
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JPH09189290A (ja) | 1995-12-29 | 1997-07-22 | Kokusai Electric Co Ltd | 真空処理装置 |
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JPH11233293A (ja) | 1998-02-13 | 1999-08-27 | Kokusai Electric Co Ltd | プラズマ処理方法及びプラズマcvd装置 |
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KR20030096247A (ko) * | 2001-01-22 | 2003-12-24 | 동경 엘렉트론 주식회사 | 기기의 생산성 향상 시스템 및 그 방법 |
JP4128339B2 (ja) * | 2001-03-05 | 2008-07-30 | 株式会社日立製作所 | 試料処理装置用プロセスモニタ及び試料の製造方法 |
JP4878085B2 (ja) * | 2001-04-20 | 2012-02-15 | ラピスセミコンダクタ株式会社 | 製造工程のための管理方法 |
US6998611B2 (en) * | 2001-09-06 | 2006-02-14 | Ebara Corporation | Electron beam apparatus and device manufacturing method using same |
US6718220B2 (en) * | 2001-11-29 | 2004-04-06 | Windbond Electronics Corporation | Method and system of monitoring apparatuses of manufacturing IC |
JP4030858B2 (ja) * | 2002-10-30 | 2008-01-09 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
US7010364B1 (en) * | 2003-09-22 | 2006-03-07 | The Mathworks, Inc. | System and method for performing process visualization |
JP4384093B2 (ja) * | 2004-09-03 | 2009-12-16 | 株式会社東芝 | プロセス状態管理システム、管理サーバ、プロセス状態管理方法及びプロセス状態管理用プログラム |
US7567887B2 (en) * | 2004-09-10 | 2009-07-28 | Exxonmobil Research And Engineering Company | Application of abnormal event detection technology to fluidized catalytic cracking unit |
US20060180570A1 (en) * | 2005-02-14 | 2006-08-17 | Mahoney Leonard J | Application of in-situ plasma measurements to performance and control of a plasma processing system |
EP2998894B1 (de) * | 2005-07-11 | 2021-09-08 | Brooks Automation, Inc. | Intelligentes zustandsüberwachungs- und fehlerdiagnosesystem |
US7429532B2 (en) * | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
-
2005
- 2005-12-22 DE DE602005017310T patent/DE602005017310D1/de active Active
- 2005-12-22 EP EP05820365A patent/EP1845553B1/de not_active Not-in-force
- 2005-12-22 KR KR1020077014655A patent/KR101208295B1/ko active IP Right Grant
- 2005-12-22 US US11/794,374 patent/US7751921B2/en active Active
- 2005-12-22 WO PCT/JP2005/023617 patent/WO2006070689A1/ja active Application Filing
- 2005-12-28 TW TW094147053A patent/TW200644121A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI362072B (de) | 2012-04-11 |
KR101208295B1 (ko) | 2012-12-05 |
EP1845553A4 (de) | 2008-11-05 |
EP1845553A1 (de) | 2007-10-17 |
WO2006070689A1 (ja) | 2006-07-06 |
US20080208385A1 (en) | 2008-08-28 |
TW200644121A (en) | 2006-12-16 |
US7751921B2 (en) | 2010-07-06 |
KR20070090959A (ko) | 2007-09-06 |
EP1845553B1 (de) | 2009-10-21 |
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Legal Events
Date | Code | Title | Description |
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8364 | No opposition during term of opposition |