WO2020034967A1 - 真空镀膜设备、方法及滤波器腔体膜层的制备方法 - Google Patents

真空镀膜设备、方法及滤波器腔体膜层的制备方法 Download PDF

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Publication number
WO2020034967A1
WO2020034967A1 PCT/CN2019/100441 CN2019100441W WO2020034967A1 WO 2020034967 A1 WO2020034967 A1 WO 2020034967A1 CN 2019100441 W CN2019100441 W CN 2019100441W WO 2020034967 A1 WO2020034967 A1 WO 2020034967A1
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Prior art keywords
vacuum
chamber
coating
substrate
transition
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PCT/CN2019/100441
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English (en)
French (fr)
Inventor
邵聪
郑金桥
宋忠孝
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中兴通讯股份有限公司
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Priority to JP2021506961A priority Critical patent/JP7122457B2/ja
Priority to DE112019004100.2T priority patent/DE112019004100T5/de
Publication of WO2020034967A1 publication Critical patent/WO2020034967A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

Definitions

  • This application relates to, but is not limited to, the field of vacuum coating production.
  • Vacuum coating refers to the deposition of a film with a certain function on the surface of a substrate by a deposition technique under a certain vacuum environment.
  • PVD Physical Vapor Deposition
  • continuous PVD coating equipment has been produced.
  • continuous PVD coating equipment coating can indeed improve product processing efficiency, but its processing efficiency is still low. Especially for large-volume parts, the processing efficiency is still very low.
  • the embodiments of the present application provide a vacuum coating device and method, and a method for preparing a filter cavity film layer.
  • a vacuum coating equipment includes: an inlet differential pressure chamber, a coating chamber, and an outlet differential pressure chamber; wherein the inlet differential pressure chamber is provided with at least two vacuum lines; each vacuum line includes at least two stages connected in sequence The vacuum transition chamber of the vacuum transition chamber; the at least two vacuum lines are connected in parallel, and one end of each vacuum line is connected to the entrance of the coating chamber; for each vacuum line, the vacuum transition chamber connected to the entrance of the coating chamber The degree of vacuum can reach that of the coating chamber; the coating chamber is provided with coating equipment; the outlet pressure difference chamber is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in order.
  • the at least two vacuum lines are connected in parallel, and one end of each vacuum line is connected to the outlet of the coating chamber; for each vacuum line, the vacuum degree of the vacuum transition chamber connected to the outlet of the coating chamber can reach The degree of vacuum of the coating chamber; the apparatus further includes a transfer device for transferring a substrate for coating.
  • the coating chamber is provided with at least two first components for placing a target.
  • a first distance is set between two adjacent first parts, so that the radiation range corresponding to the target on one of the two adjacent first parts is equal to that of the adjacent two first parts.
  • the radiation range corresponding to the target on the other part has overlapping areas.
  • each vacuum line of the inlet differential pressure chamber further includes a cleaning vacuum chamber for performing plasma cleaning on the substrate; the vacuum degree of the cleaning vacuum chamber is less than the vacuum connected to the inlet of the coating chamber. Vacuum of the transition chamber.
  • a second member is provided between adjacent vacuum transition chambers of each vacuum line; when the substrate is transferred to the corresponding vacuum transition chamber, the second member provided realizes between the adjacent vacuum transition chambers. And when the substrate is transferred to the next adjacent vacuum transition chamber, a second component disposed between the next adjacent vacuum transition chamber is opened.
  • the second member is provided between the vacuum transition chamber connected to the inlet of the coating chamber and the coating chamber; the vacuum transition chamber connected to the outlet of the coating chamber and the coating film The second member is provided between the chambers.
  • the transmission devices in the inlet differential pressure chamber, the coating chamber, and the outlet differential pressure chamber are independently provided.
  • each vacuum line of the inlet differential pressure chamber is correspondingly provided with a transmission device; each vacuum line of the outlet differential pressure chamber is correspondingly provided with a transmission device.
  • each vacuum chamber is correspondingly provided with a transmission device.
  • the invention relates to a method for preparing a filter cavity film layer.
  • the filter cavity film layer prepared by using any of the vacuum coating equipments described above.
  • a vacuum coating method includes: selecting a vacuum line from at least two vacuum lines of a pressure differential chamber of a vacuum coating equipment inlet; each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two The vacuum lines are connected in parallel; the substrates are sequentially transferred to the vacuum transition chambers of the selected vacuum line in order to evacuate the vacuum to the preset vacuum degree corresponding to each vacuum transition chamber; when the substrate enters the last of the selected vacuum line
  • the vacuum degree of the first-stage vacuum transition chamber is the same as that of the coating chamber, the substrate is transferred to the coating chamber of the vacuum coating equipment, and the coating equipment of the coating chamber is used at the Depositing a film layer on the substrate
  • the selecting a vacuum line from at least two vacuum lines of an inlet pressure differential chamber of the vacuum coating equipment includes: for each vacuum line, detecting whether the corresponding vacuum line is in a vacuum buffer state; the vacuum buffer state The corresponding vacuum line described below does not satisfy the conditions for conveying the substrate to the coating chamber; it is determined that at least one vacuum line is not in a vacuum buffer state; and one vacuum line is selected from at least one vacuum line that is not in a vacuum buffer state.
  • the step of transferring the substrate to the vacuum transition chambers of the selected vacuum line in order to evacuate the vacuum to a preset vacuum degree corresponding to each vacuum transition chamber includes: for each vacuum transition chamber, when When the substrate is entered into the corresponding vacuum transition chamber, a second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located is opened, so that the substrate is transferred to the corresponding vacuum transition chamber; After the substrate enters the corresponding vacuum transition chamber, the second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located is closed, and a vacuum is drawn; the degree of vacuum meets the corresponding vacuum transition chamber When the preset vacuum degree is 5%, the second component provided between the corresponding vacuum transition chamber and the next adjacent vacuum transition chamber is opened, so that the substrate is transferred to the next adjacent vacuum transition chamber.
  • the method further includes: when the substrate is transferred to the last-stage vacuum transition chamber, and the vacuum degree of the vacuum transition chamber is the same as the vacuum degree of the coating chamber, opening the last stage A second component provided between the vacuum transition chamber and the coating chamber, so that the substrate is transferred to the coating chamber; after transferring the substrate to the coating chamber, closing the last-stage vacuum transition chamber and A second component disposed between the coating chambers.
  • the selecting a vacuum line from at least two vacuum lines of an outlet pressure differential chamber of the vacuum coating equipment includes: for each vacuum line, detecting whether a corresponding vacuum line is in a vacuum buffering state; The corresponding vacuum line in the vacuum buffering state does not satisfy the output condition; it is determined that at least one vacuum line is not in the vacuum buffering state; and one vacuum line is selected from at least one vacuum line in the vacuum buffering state.
  • the substrate on which the film layer is deposited is sequentially transferred to the vacuum transition chambers of each level of the selected vacuum line, and the vacuum is evacuated to reach the preset vacuum degree corresponding to each vacuum transition chamber, including: Two vacuum transition chambers, when the substrate with the deposited film enters the corresponding vacuum transition chamber, a second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate with the deposited film is currently located is opened, so that The film-deposited substrate is transferred to a corresponding vacuum transition chamber; after the film-deposited substrate enters the corresponding vacuum transition chamber, the corresponding vacuum transition chamber and the vacuum transition where the substrate is currently located are closed.
  • the method further includes: after the deposition of the film layer of the substrate is completed, opening a second member provided between the vacuum transition chamber connected to the coating chamber outlet and the coating chamber, so that The film-deposited substrate is transferred to the vacuum transition chamber connected to the coating chamber outlet; after the film-deposited substrate is transferred to the vacuum transition chamber connected to the coating chamber outlet, the communication with the substrate is closed.
  • a second component provided between the vacuum transition chamber connected to the coating chamber outlet and the coating chamber.
  • the depositing a film layer on the substrate by using the coating equipment of the coating chamber includes: when the substrate is transferred to a first target corresponding to a first target placed on a first part of the coating chamber; When the overlapping area of the radiation range corresponding to the second target material is irradiated by the second target material, a transition layer is formed on the substrate; the second target material is placed and placed on the first target. The first part of the material is spaced a first distance from the adjacent first part.
  • the method further includes: The substrate is transferred to the cleaning vacuum chamber of the selected vacuum line, and the vacuum is evacuated to reach the vacuum degree of the cleaning vacuum chamber, and the substrate is subjected to plasma cleaning.
  • the targets for preparing the filter cavity film layer include: Cr target, Cu target, Ag target; when the film layer is deposited, a Cr layer, a Cu layer, and an Ag layer are sequentially deposited on the filter cavity. Floor.
  • the targets for preparing the filter cavity film layer include: Cr target, Cu target, Ag-Ta target; when the film layer is deposited, a Cr layer and a Cu layer are sequentially deposited on the filter cavity. , Ag-Ta layer.
  • the method further includes: uniformly inlaying the bulk Ta material on the Ag plate; and forming the Ag plate inlaid with the Ta material into an Ag-Ta target material.
  • the surface area ratio of Ag to Ta in the Ag-Ta target is 1: 1 to 10: 1.
  • the relative atomic ratio of Ag and Ta in the deposited Ag-Ta layer is 4: 1 to 50: 1.
  • the inlet differential pressure chamber is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in order; The at least two vacuum lines are connected in parallel, and one end of each vacuum line is connected to the entrance of the coating chamber; for each vacuum line, the vacuum degree of the vacuum transition chamber connected to the entrance of the coating chamber can reach the degree The vacuum degree of the coating chamber; the outlet pressure differential chamber is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel, and One end is connected to the outlet of the coating chamber; for each vacuum line, the vacuum of the vacuum transition chamber connected to the outlet of the coating chamber can reach the vacuum of the coating chamber; due to the inlet pressure difference chamber and the outlet pressure
  • the differential chamber is a structural device with multiple vacuum lines connected in parallel.
  • the inlet differential pressure chamber when one vacuum line cannot transport the sample to be deposited, another vacuum line can be selected to transport the sample to be deposited.
  • To the coating chamber so as to continuously deliver samples to be deposited to the coating chamber;
  • the outlet pressure difference chamber when one vacuum line cannot output the sample that has been coated, you can choose another vacuum line to output the sample that has been coated, so as to achieve Continuously receiving the finished coating samples output from the coating chamber, so that continuous batch processing of samples can be completed, which can greatly improve processing efficiency.
  • FIG. 1 is a schematic structural diagram of a vacuum coating device according to an embodiment of the present application.
  • FIG. 2 is a schematic flowchart of a vacuum coating method according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a vacuum coating device according to an embodiment of the present application.
  • a continuous PVD coating equipment uses multiple vacuum chamber buffers to ensure the vacuum of the coating chamber. During the buffering process (vacuum or vacuum adjustment process), the product is stopped, so in this case, the sample is intermittently flowing in. Coating room. Therefore, it is difficult to improve the processing efficiency of products with this continuous PVD coating equipment, especially for large-volume parts, the processing efficiency is still very low.
  • the first part of the vacuum coating equipment (referred to as the inlet differential pressure chamber) is responsible for conveying products to the coating chamber (that is, the second part of the vacuum coating equipment);
  • the third part of the vacuum coating equipment (referred to as the outlet pressure difference chamber) is responsible for receiving the output of the coating chamber from the finished coating product.
  • the first part contains several vacuum lines, and the vacuum lines are connected in parallel to To achieve the continuous delivery of samples to be deposited to the second part; the third part contains a number of vacuum lines, and several vacuum lines in parallel, in order to continuously receive the output of the completed coating samples from the second part.
  • the inlet differential pressure chamber and the outlet differential pressure chamber are structural devices in which a plurality of vacuum lines are connected in parallel, continuous batch processing of samples can be completed, and the processing efficiency can be greatly improved.
  • An embodiment of the present application provides a vacuum coating device. As shown in FIG. 1, the device includes: an inlet pressure difference chamber 11, a coating chamber 12, and an outlet pressure difference chamber 13.
  • the inlet pressure difference chamber 11 is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel, and one end of each vacuum line is connected with The entrance of the coating chamber is connected; for each vacuum line, the vacuum degree of the vacuum transition chamber connected to the entrance of the coating chamber 12 can reach the vacuum degree of the coating chamber; the coating chamber 12 is provided with coating equipment
  • the outlet pressure difference chamber 13 is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel, and one end of each vacuum line is connected to the vacuum line; The outlet of the coating chamber is connected; for each vacuum line, the vacuum of the vacuum transition chamber connected to the outlet of the coating chamber 12 can reach the vacuum of the coating chamber.
  • the apparatus further includes a transfer device for transferring a substrate for coating.
  • the substrate is sequentially transferred to the vacuum transition chambers of the selected vacuum lines, and the vacuum is drawn.
  • a vacuum line is selected from at least two vacuum lines in the outlet pressure difference chamber 13 and a film is deposited.
  • the substrates of the layers are sequentially transferred to the vacuum transition chambers of the selected vacuum lines in order to finally output the substrates on which the film layers are deposited.
  • the parallel connection of the at least two vacuum lines means that one end of each vacuum line of the inlet pressure difference chamber 11 can communicate with the outside atmosphere (also can be understood as communication), and the other end is connected with the coating chamber 12
  • one end of each vacuum line of the outlet pressure difference chamber 13 is connected to the outlet of the coating chamber 12, and the other end is able to communicate with the outside atmosphere.
  • the vacuum degree of each vacuum transition chamber is different for each vacuum line of the inlet differential pressure chamber 11, and starting from the vacuum transition chamber that receives the substrate in the atmosphere, according to the connection order, the vacuum transition
  • the vacuum degree of the chamber is getting higher and higher, and the vacuum degree of the vacuum transition chamber connected to the inlet of the coating chamber 12 is basically the same as the vacuum degree of the coating chamber; accordingly, for each outlet of the differential pressure chamber 13 Vacuum lines, the vacuum degree of each vacuum transition chamber is different, the vacuum degree of the vacuum transition chamber connected to the outlet of the coating chamber is basically the same as the degree of vacuum reaching the coating chamber, and is the same as that of the coating chamber Starting from the vacuum transition chamber connected to the inlet of 12, the vacuum degree of the vacuum transition chamber is getting lower and lower according to the connection order. In this way, the vacuum degree of the coating chamber 12 can be guaranteed to meet the requirements of the coating.
  • the vacuum method can quickly make the vacuum degree corresponding to each vacuum line reach the set vacuum degree.
  • the number of vacuum transition chambers of the inlet differential pressure chamber 11 and the outlet differential pressure chamber 13 can be set as required, for example, it can be set in combination with the degree of vacuum and the cost during coating.
  • the coating technology of the coating equipment may be PVD technology.
  • the coating chamber may be provided with at least two first parts for placing a target. Since at least two first parts are provided, different targets can be placed. To achieve the deposition of different film layers.
  • no separation measures or specific distances can be set between each target, so that a transition layer can be deposited on the base, so that the bonding force between the two film layers can be increased.
  • a first distance may be set between two adjacent first parts, so that the radiation range corresponding to the target on one of the two adjacent first parts is the same as that of the adjacent two
  • the radiation range corresponding to the target on the other one of the first components has an overlapping area, that is, the substrate is transferred by the transfer device to the target on one of the two adjacent first components.
  • the end of the radiation range can be radiated by the target on the other one of the two adjacent first parts.
  • the substrate before entering the coating chamber 12, the substrate needs to be sufficiently clean to ensure a strong bonding force between the deposited film layer and the substrate. Therefore, before entering the coating chamber 12, it is better to be able to The substrate is cleaned.
  • each vacuum line of the inlet differential pressure chamber 11 further includes a cleaning vacuum chamber for performing plasma cleaning on the substrate; the vacuum degree of the cleaning vacuum chamber is smaller than that of the coating chamber.
  • the vacuum degree of the vacuum transition chamber connected to the entrance.
  • the cleaning vacuum chamber may be set at an appropriate position of a vacuum line according to the degree of vacuum required for performing plasma cleaning on the substrate.
  • a second component is provided between adjacent vacuum transition chambers of each vacuum line; when the substrate is transferred to the corresponding vacuum transition chamber, the second component provided realizes the relationship between the adjacent vacuum transition chambers. And the second member disposed between the next adjacent vacuum transition chamber is opened when the substrate is transferred to the next adjacent vacuum transition chamber.
  • the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located are opened.
  • a second component is provided between the two so that the substrate is transferred to the corresponding vacuum transition chamber.
  • a second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located is closed, and a vacuum is evacuated.
  • the last stage of the vacuum transition chamber and the coating chamber are opened.
  • a second component disposed between the substrates to transfer the substrate to the coating chamber; after transferring the substrate to the coating chamber, closing the first component provided between the last-stage vacuum transition chamber and the coating chamber Two parts.
  • the processing method of the second component corresponding to the cleaning vacuum chamber is the same as that of the second component corresponding to the vacuum transition chamber, and details are not described herein again.
  • a second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located is closed, and the film layer is deposited on the substrate. Evacuate the vacuum transition chamber where the substrate is currently located;
  • a second component provided between the corresponding vacuum transition chamber and the next adjacent vacuum transition chamber is opened, so that the substrate with the deposited film layer is transferred to the next adjacent vacuum transition chamber.
  • a second component provided between the vacuum transition chamber connected to the coating chamber outlet and the film coating chamber is opened, so that the substrate on which the film layer is deposited is transferred To the vacuum transition chamber connected to the coating chamber exit; after transferring the substrate with the deposited film layer to the vacuum transition chamber connected to the coating chamber exit, closing the vacuum transition chamber connected to the coating chamber exit And a second component disposed between the coating chamber.
  • the form of the second component may be a baffle or a door, and a valve may be additionally provided to open or close the second component.
  • the conveying devices of the inlet differential pressure chamber 11, the coating chamber 12 and the outlet differential pressure chamber 13 can be set independently.
  • each vacuum line of the inlet differential pressure chamber 11 is provided with a transmission device correspondingly; each vacuum line of the outlet differential pressure chamber 13 is provided with a transmission device correspondingly.
  • each vacuum chamber is provided with a transmission device. Since each vacuum chamber has an independent transmission device, the vacuum degree of each vacuum chamber can be effectively guaranteed.
  • the substrate refers to a sample of a film layer to be deposited.
  • the vacuum coating equipment may further include a control device for controlling the operation of the inlet differential pressure chamber 11, the coating chamber 12, and the outlet differential pressure chamber 13.
  • control device can also control the operation of the transfer device.
  • the inlet differential pressure chamber is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel, and each vacuum One end of the line is connected to the entrance of the coating chamber; for each vacuum line, the vacuum degree of the vacuum transition chamber connected to the entrance of the coating chamber can reach the vacuum degree of the coating chamber; the coating chamber is provided with Coating equipment; the outlet pressure differential chamber is provided with at least two vacuum lines; each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel, and one end of each vacuum line is connected with The outlet of the coating chamber is connected; for each vacuum line, the vacuum of the vacuum transition chamber connected to the outlet of the coating chamber can reach the vacuum of the coating chamber; the device also includes a conveying device for conveying For the substrate for coating, because the inlet pressure differential chamber and the outlet pressure differential chamber are structural devices with multiple vacuum lines connected in parallel, for the inlet pressure differential chamber, when a
  • an embodiment of the present application further provides a vacuum coating method. As shown in FIG. 2, the method includes:
  • Step 201 Select a vacuum line from at least two vacuum lines in the pressure differential chamber of the vacuum coating equipment inlet.
  • each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel.
  • the substrate needs to be pre-treated before coating.
  • This pre-treatment is generally performed in the atmospheric environment (which can be understood as the external environment).
  • This pre-treatment may include: fine sand blasting (similar to sandpaper) Grinding effect), degreasing, etc., so that the surface of the substrate is clean and flat.
  • the specific implementation of this step may include: for each vacuum line, detecting whether the corresponding vacuum line is in a vacuum buffering state; in the vacuum buffering state, the corresponding vacuum line is not satisfied to the coating chamber Conditions for conveying the substrate; determining at least one vacuum line that is not in a vacuum buffer state; and selecting one vacuum line from at least one vacuum line that is not in a vacuum buffer state.
  • the vacuum line in the vacuum buffering state cannot be used to transfer the substrate, so the vacuum line in the vacuum buffering state can only be selected to transfer the substrate.
  • a vacuum line when there are at least two (that is, multiple) vacuum lines that are not in a vacuum buffer state, a vacuum line may be selected according to needs, such as randomly selecting a vacuum line.
  • multiple vacuum lines are connected in parallel, and multiple vacuum lines are continuously switched to achieve a continuous supply of samples to the coating chamber.
  • Step 202 The substrates are sequentially transferred to the various vacuum transition chambers of the selected vacuum line, and the vacuum is evacuated so that the vacuum degree reaches a preset vacuum degree corresponding to each vacuum transition chamber.
  • a second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located is opened, so that all the The substrate is transferred to a corresponding vacuum transition chamber; after the substrate enters the corresponding vacuum transition chamber, a second component provided between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate is currently located is closed, and a vacuum is evacuated. ; When the degree of vacuum satisfies the preset vacuum degree corresponding to the corresponding vacuum transition chamber, the second component provided between the corresponding vacuum transition chamber and the next adjacent vacuum transition chamber is opened, so that the substrate is transferred to the The next adjacent vacuum transition chamber is described.
  • the last stage of the vacuum transition chamber and the coating chamber are opened.
  • a second component disposed between the substrates to transfer the substrate to the coating chamber; after transferring the substrate to the coating chamber, closing the first component provided between the last-stage vacuum transition chamber and the coating chamber Two parts.
  • the last-stage vacuum transition chamber continues to be in a vacuumed state.
  • this vacuum line may also be referred to as being in a vacuum buffering state.
  • the method when the substrate is sequentially transferred to the vacuum transition chambers of each level of the selected vacuum line, and the vacuum is evacuated so that the vacuum reaches a preset vacuum degree corresponding to each vacuum transition chamber, the method further includes:
  • the substrate is transferred to a cleaning vacuum chamber of a selected vacuum line, and the vacuum is evacuated so that the degree of vacuum reaches the vacuum degree of the cleaning vacuum chamber, and the substrate is subjected to plasma cleaning.
  • the processing method of the second component corresponding to the cleaning vacuum chamber is the same as that of the second component corresponding to the vacuum transition chamber, and details are not described herein again.
  • the preset vacuum degree is set as required.
  • Step 203 When the substrate enters the last-stage vacuum transition chamber of the selected vacuum line, and the degree of vacuum of the rear vacuum transition chamber is the same as that of the coating chamber, the substrate is transferred to the vacuum coating.
  • the film coating chamber of the equipment uses the film coating equipment of the film coating chamber to deposit a film layer on the substrate.
  • the using the coating equipment of the coating chamber to deposit a film layer on the substrate includes: when the substrate is transferred to an end of a radiation range corresponding to a first target placed on a first part of the coating chamber When a second target material is irradiated, a transition layer is formed on the substrate; the second target material is placed on an adjacent first component spaced a first distance from the first component on which the first target material is placed on.
  • the radiation range of the first target material and the second target material has an overlapping area, and in the overlapping area, it can be irradiated by both the first target material and the second target material to form a transition layer.
  • Step 204 Select a vacuum line from at least two vacuum lines in an outlet pressure difference chamber of the vacuum coating equipment.
  • each vacuum line includes at least two vacuum transition chambers connected in sequence; the at least two vacuum lines are connected in parallel.
  • the specific implementation of this step may include: for each vacuum line, detecting whether the corresponding vacuum line is in a vacuum buffer state; the corresponding vacuum line does not satisfy the output condition under the vacuum buffer state; At least one vacuum line in a vacuum buffering state; one vacuum line is selected from at least one vacuum line in a vacuum buffering state.
  • a vacuum line in a vacuum buffering state cannot be used to output a substrate on which a film layer is deposited. Therefore, a vacuum line in a vacuum buffering state can only be selected to output a substrate on which a film layer is deposited.
  • a vacuum line when there are at least two (that is, multiple) vacuum lines that are not in a vacuum buffer state, a vacuum line may be selected according to needs, such as randomly selecting a vacuum line.
  • multiple vacuum lines are connected in parallel, and multiple vacuum lines are continuously switched to achieve a continuous output of samples from the coating chamber.
  • Step 205 The substrates with the deposited film layers are sequentially transferred to the vacuum transition chambers of the selected vacuum lines, and the vacuum is evacuated so that the vacuum reaches the preset vacuum degree corresponding to each vacuum transition chamber to output the substrates with the deposited film layers .
  • a gap between the corresponding vacuum transition chamber and the vacuum transition chamber where the substrate on which the film layer is deposited is currently located is opened.
  • a second component so that the substrate with the deposited film layer is transferred to the corresponding vacuum transition chamber; after the substrate with the deposited film layer enters the corresponding vacuum transition chamber, the corresponding vacuum transition chamber and the substrate are closed.
  • a second component provided between the vacuum transition chambers currently in place and evacuating the vacuum transition chambers in which the substrate on which the film layer is deposited is currently located; opening between the corresponding vacuum transition chambers and the next adjacent vacuum transition chamber
  • a second component is provided so that the substrate on which the film layer is deposited is transferred to the next adjacent vacuum transition chamber.
  • the substrate with the deposited film layer can be When entering the next adjacent vacuum transition chamber, there is no need to care about the vacuum degree of the previous adjacent vacuum transition chamber.
  • a second component provided between the vacuum transition chamber connected to the coating chamber outlet and the coating chamber is opened, so that the substrate on which the film layer is deposited is transferred to the substrate.
  • the vacuum transition chamber connected to the coating chamber outlet; after transferring the substrate with the coating layer deposited to the vacuum transition chamber connected to the coating chamber outlet, closing the vacuum transition chamber and the chamber connected to the coating chamber outlet The second component provided between the coating chambers is described.
  • the substrate is transferred by a transfer device of the vacuum coating equipment.
  • Cavity filter is an important electronic device, which has a wide range of applications in radar, microwave, communication and other fields.
  • the cavity of the industrial cavity filter is generally a magnesium substrate or an aluminum substrate.
  • the surface treatment method mostly uses a silver plating process to surface the cavity, and the filter is plated silver Most of the processes are highly toxic cyanide plating processes, which have a greater impact on human health and the environment.
  • the embodiment of the present application further provides a method for preparing a filter cavity film layer, which adopts the above-mentioned vacuum coating equipment to prepare a filter cavity film layer.
  • the filter cavity is a substrate, which can also be understood as a substrate.
  • the filter cavity may be a magnesium substrate or an aluminum substrate.
  • the target for preparing the filter cavity film layer may include: a Cr target, a Cu target, and an Ag target; when the film layer is deposited, a Cr layer and a Cu layer are sequentially deposited on the filter cavity. , Ag layer.
  • the Cr layer is a transition layer between the cavity and the Cu layer.
  • the target material for preparing the filter cavity film layer includes: a Cr target, a Cu target, and an Ag-Ta target; when the film layer is deposited, a Cr layer is sequentially deposited on the filter cavity, and Cu Layer, Ag-Ta layer.
  • the inlet pressure difference chamber 11 includes three vacuum lines, and each vacuum line includes a vacuum transition chamber 111, a vacuum transition chamber 112, a vacuum transition chamber 113, a cleaning vacuum chamber 114, and
  • the vacuum transition chamber 115 is connected in sequence to the vacuum transition chamber 111, the vacuum transition chamber 112, the vacuum transition chamber 113, the cleaning vacuum chamber 114, and the vacuum transition chamber 115, and a baffle 31 (the above-mentioned second component, In this embodiment, it may be a door), and specifically includes a baffle 311, a baffle 312, a baffle 313, a baffle 314, and a baffle 315.
  • the vacuum transition chamber 111 can communicate with the outside atmosphere and is responsible for picking up and collecting samples to be deposited, it can also be referred to as a sample introduction vacuum chamber; the vacuum transition chamber 111 communicates with the outside atmosphere through the door 32.
  • the outlet pressure difference chamber 13 also includes three vacuum lines, and each vacuum line includes a vacuum transition chamber 131, a vacuum transition chamber 132, a vacuum transition chamber 133, and a vacuum transition chamber 134.
  • the vacuum transition chamber 131, the vacuum transition chamber 132, the vacuum transition chamber 133, and the vacuum transition chamber 134 are sequentially connected, and a baffle 33 (the second component described above) is provided between the vacuum chambers, and specifically includes a baffle 331 and a baffle 332. , Baffle 333, baffle 334.
  • the vacuum transition chamber 134 can communicate with the outside atmosphere and is responsible for outputting samples, it can also be referred to as a sample extraction vacuum chamber; the vacuum transition chamber 134 communicates with the outside atmosphere through the door 34.
  • baffles 31 provided between the vacuum chambers can be opened or closed to achieve communication or vacuum isolation between the vacuum chambers; during the working of the equipment, baffles at both ends of each vacuum chamber Only one end is allowed to open, that is, when the baffle at one end of each vacuum chamber is about to open or has been opened, the baffle or door at the other end must be closed.
  • Step A Open the door 32, place a certain amount of product on the loading device on the conveying device 35, close the door 32, and evacuate the vacuum transition chamber 111 after the injection to the set vacuum degree.
  • Step B Release (also can be understood as opening) the baffle 311, the sample enters the vacuum transition chamber 112, close the baffle 311, and evacuate the vacuum transition chamber 112 to a predetermined vacuum degree.
  • the vacuum transition chamber 111 is deflated to a normal atmospheric pressure, and the door 32 is opened so as to start reloading the sample from the outside.
  • Step C Release the baffle 312, the sample enters the vacuum transition chamber 113, close the baffle 312, and evacuate the vacuum transition chamber 113 to the set vacuum degree.
  • Step D Release the baffle 313, the product enters the cleaning vacuum chamber 114, close the baffle 313, adjust the vacuum of the cleaning vacuum chamber 114 to a set vacuum degree, and perform plasma cleaning on the sample.
  • Step E Release the baffle 314, the product enters the vacuum transition chamber 115, close the baffle 314, and evacuate the vacuum transition chamber 115 to the same degree of vacuum as the coating chamber 12.
  • Step F Loosen the baffle 315, transfer the sample to be coated to the coating chamber 12, close the baffle 315, and complete the transportation process of the product to be coated.
  • this vacuum line temporarily suspends the delivery of products to the coating chamber; at the same time, other vacuum lines connected in parallel with it during this time (vacuum line During the period of time in the vacuum buffering state) is responsible for conveying the products to the coating chamber 12.
  • vacuum line During the period of time in the vacuum buffering state
  • the coating chamber 12 can continuously and continuously receive the products to be coated from the inlet pressure difference chamber 11.
  • the upper part of the coating chamber 12 is provided with a certain number of target positions 36 (the first component described above) side by side, which facilitates the installation of different target materials and can obtain different coating layers.
  • target positions 36 the first component described above
  • the front end of the coating chamber 12 is provided with a plurality of parallel conveying devices, one-to-one corresponding to the vacuum lines of the inlet differential pressure chamber 11, and the products transferred from the inlet differential pressure chamber 11 are sequentially conveyed to the conveying device 37.
  • the rear end of the coating chamber 12 is provided with several parallel conveying devices, one-to-one corresponding to the vacuum lines of the outlet pressure difference chamber 13, and the coated products are sequentially transferred from the product conveying device 37 to the corresponding outlet pressure difference chamber 13. Vacuum line.
  • the length of the 12-channel coating chamber can be extended, the number of upper targets can be increased, and the running speed of the chain of the conveyor 37 can be increased. Greatly improve processing efficiency.
  • various target materials with coatings can be flexibly configured to realize film formation with different coating layers and film formation with different alloy plating layers according to requirements.
  • the baffle 33 provided between the vacuum chambers can be opened or closed to achieve communication or vacuum isolation between the vacuum chambers; equipment During work, only one end of the baffle at each end of the vacuum chamber is allowed to open, that is, when the baffle at one end of each vacuum chamber is about to open or has been opened, the baffle at the other end must be closed.
  • Step A The baffle 331 is opened, and the finished coated product enters the vacuum transition chamber 131 from the coating chamber 12, and is placed on the conveying device 38 to enter the vacuum transition chamber 131, and the baffle 331 is closed.
  • Step B Open the baffle 332, the product enters the vacuum transition chamber 132, and close the baffle 332.
  • the vacuum transition chamber 131 is evacuated, and when the vacuum degree reaches the same degree of vacuum as the coating chamber 12, it is ready to receive products from the coating chamber 12 again.
  • Step C Open the baffle 333, the product enters the vacuum transition chamber 133, and close the baffle 333.
  • the vacuum transition chamber 132 is evacuated, and when a predetermined vacuum degree is reached, it is ready to receive products from the vacuum transition chamber 131 again.
  • Step D Open the baffle 334, the product enters the vacuum transition chamber 134, and close the baffle 334.
  • the vacuum transition chamber 133 is evacuated, and when a predetermined degree of vacuum is reached, it is ready to receive products from the vacuum transition chamber 132 again.
  • Step E After the vacuum transition chamber 134 is deflated to normal atmospheric pressure, open the door 34, take out the finished coated product, close the door 34, and evacuate the vacuum transition chamber 134 to a predetermined degree of vacuum, and prepare to return from the vacuum transition chamber 133 again Receive the product. At this point, the output of the product is completed.
  • vacuum line when a vacuum line is in a vacuum buffering state (vacuum time), this vacuum line temporarily suspends the delivery of products; at the same time, other vacuum lines connected in parallel with it during this time (the vacuum line is in a vacuum buffering state) Within the time period) responsible for receiving the products transported by the coating chamber 12 (When the control equipment detects that the vacuum degree of the vacuum line does not meet the requirements, it will choose other vacuum lines to receive the products transported by the coating chamber 12).
  • the vacuum lines are operated in a crosswise manner, which can continuously and continuously convey the finished products in the coating chamber 12.
  • the number of vacuum transition chambers can be increased, the vacuum buffering time can be shortened, and the processing efficiency can be improved.
  • one or more vacuum transition chambers are added before the vacuum transition chamber 134.
  • a film layer is deposited on the filter cavity using the process described above.
  • the filter product is transferred to the coating chamber 12 by entering the differential pressure chamber 11;
  • a film layer is deposited in the cavity of the filter.
  • the targets installed in the upper part of the coating chamber 12 are a Cr target, a Cu target, and an Ag (or an Ag-Ta assembly target, which can be selected according to needs).
  • a Cr target a Cr target
  • a Cu target a Cu target
  • an Ag an Ag-Ta assembly target, which can be selected according to needs.
  • three layers of Cr, Cu, Ag (or Ag-Ta alloy, depending on the target) are deposited in sequence.
  • the Cr coating is the thinnest, which plays the role of transition between the substrate and the coating.
  • the Cu layer is thicker and is a filter.
  • the most important conductive layer on the surface and the thinner Ag (or Ag-Ta alloy) layer is deposited on the outermost layer of the filter product. The main purpose is to conduct electricity and protect the copper layer from oxidation.
  • the purpose of using the Ag-Ta assembly target is to obtain an Ag-Ta alloy coating with a lower Ta content, which not only ensures good conductivity, but also improves the oxidation resistance of the outermost coating of the filter.
  • the manufacturing method of the Ag-Ta assembled target is: uniformly inlaid a small amount of small Ta materials in the Ag plate, and processing the Ta plate inlaid Ag plate into the target material, such as mechanical processing, After setting the back plate, etc., the Ag-Ta assembled target is finally obtained.
  • the Ag-Ta assembled target required by the filter product can have a surface area ratio range of Ag and Ta: 1: 1 -10: 1, the range of the relative atomic ratio of Ag and Ta in the obtained Ag-Ta alloy film layer may be: 4: 1-50: 1.
  • a bulk Ta material with the same specifications in order to make the material distribution in the deposited film uniform, a bulk Ta material with the same specifications can be used.
  • the size of the block Ta can be set as required.
  • the uniform inlay means that a piece of Ta material is inlaid in a unit area of the Ag plate. More specifically, an Ag plate is evenly divided into N pieces (the side facing the filter product during the deposition process after being made into a target material), and each piece is inlaid with a piece of Ta material.
  • N is set on the principle that the material distribution in the deposited film can be made uniform.
  • N is an integer greater than or equal to two.
  • the surface area can be understood as the effective working area, and in general terms, it can be understood as the exposed area of the target surface.
  • the exposed area of the target surface refers to the area of the side of the target facing the filter product during the deposition process.
  • the upper part of the coating chamber 12 is sequentially installed with three types of targets: Cr target, Cu target, Ag target (or Ag-Ta assembled target), and no separation measures or specific measures are provided between each target.
  • Distance when the filter product is transmitted to the end of the radiation range of one target, it will be radiated by the adjacent second target, thereby forming a thin alloy layer.
  • the filter product is about to leave the Gr target range.
  • the Cu target in the next region can deposit Cu atoms on the filter product. Therefore, a thin Cr-Cu alloy transition layer will be formed, and the bonding force between the two plating layers is better.
  • the thickness of the Cu layer on the surface of the filter cavity is 8 ⁇ m
  • the thickness of the Ag layer is 1 ⁇ m
  • a certain number of Cr targets, Cu targets, and Ag-Ta assembled targets are installed in order in the coating chamber 12, among which Ag-Ta assembled targets Ag and Ta spatter.
  • the shot area ratio is 8: 1, and various parameters of the coating chamber are adjusted according to the radiation range of various targets and the running speed of the 37 chain of the conveying device, as shown in Table 2:
  • the thickness of the Cu layer on the surface of the filter cavity is 8 ⁇ m
  • the thickness of the Ag-Ta alloy plating layer is 0.9 ⁇ m.
  • a certain number of Cr targets, Cu targets, and Ag-Ta assembled targets are installed in order in the coating chamber 12, among which Ag-Ta assembled targets Ag and Ta spatter.
  • the shooting area ratio is 4: 1, and various parameters of the coating chamber are adjusted according to the radiation range of various targets and the running speed of the chain of the transmission device 37, as shown in Table 3:
  • the thickness of the Cu layer obtained on the surface of the filter cavity is 7 ⁇ m
  • the thickness of the Ag-Ta alloy plating layer is 1.1 ⁇ m.
  • a certain number of Cr targets, Cu targets, and Ag-Ta assembled targets are installed in order in the coating chamber 8, among which the Ag-Ta assembled targets Ag and Ta spatter.
  • the shooting area ratio is 2: 1, and various parameters of the coating chamber are adjusted according to the radiation range of various targets and the running speed of the chain of the transmission device 37, as shown in Table 4:
  • the thickness of the Cu layer obtained on the surface of the filter cavity is 9 ⁇ m
  • the thickness of the Ag-Ta alloy plating layer is 1.2 ⁇ m.
  • the inlet pressure differential chamber and the outlet pressure differential chamber of the vacuum coating equipment of the embodiment of the present application are continuously connected by a plurality of vacuum lines in a structural device. Receiving the finished filtered product output from the coating chamber. In this way, vacuum buffering is no longer the bottleneck of continuous vacuum coating processing efficiency improvement, so it will greatly improve the efficiency of the deposition process.
  • the Ag-Ta assembly target is deposited over the coating chamber in the embodiment of the present application, and the Ag-Ta assembly target adopts a simple method of inlaying and bonding metal to each other, which is more traditional.
  • Alloy target the alloy is obtained by metallurgy and made into a target, such as smelting or powder metallurgy, which is difficult to produce and the cycle is long). The difficulty of making the target is reduced, and the flexibility of adjusting the element composition is improved.
  • Ag-Ta assembly target is used to deposit Ag-Ta alloy film layer with high silver and low tantalum as the outermost coating layer of the filter. Because Ta itself has excellent oxidation resistance, The traditional outermost layer is the oxidation performance ratio of the Ag layer, and the oxidation resistance of the Ag-Ta alloy coating obtained on the surface of the filter is improved.
  • the filter product In the coating room, there is no separation measure or specific distance between each target.
  • the filter product When the filter product is transmitted to the end of the radiation range of one target, it will be radiated by the adjacent second target.
  • a thin alloy layer is formed, and as a transition layer between two different plating layers, the bonding force between the two plating layers is better than the traditional bonding method without a transition layer.
  • FIG. 3 shows an example in which the inlet differential pressure chamber is provided with five vacuum chambers, and the outlet differential pressure chamber is provided with four vacuum chambers.
  • the embodiment is not limited to this.
  • four or six vacuum chambers are provided at the inlet differential pressure chamber, and five or six vacuum chambers are provided at the outlet differential pressure chamber. .
  • computer storage medium includes volatile and non-volatile implemented in any method or technology used to store information such as computer-readable instructions, data structures, program modules or other data.
  • Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disk (DVD) or other optical disk storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or may Any other medium used to store desired information and which can be accessed by a computer.
  • a communication medium typically contains computer-readable instructions, data structures, program modules, or other data in a modulated data signal such as a carrier wave or other transmission mechanism, and may include any information delivery medium .

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Abstract

一种真空镀膜设备，包括入口压差室(11)、镀膜室(12)、出口压差室(13)；入口压差室(11)设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室（111）；至少两条真空线并联，且每条真空线的一端均与所述镀膜室(12)的入口连接；与镀膜室(12)的入口连接的真空过渡室（111）的真空度能够达到镀膜室(12)的真空度；镀膜室(12)，设置有镀膜设备；出口压差室(13)设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室（131）；至少两条真空线并联，且每条真空线的一端均与镀膜室(12)的出口连接；与镀膜室(12)的出口连接的真空过渡室（131）的真空度能够达到镀膜室(12)的真空度；设备还包含用于传送用于镀膜的基底的传送装置。还包括一种真空镀膜方法及滤波器腔体膜层的制备方法。

Description

真空镀膜设备、方法及滤波器腔体膜层的制备方法
交叉引用
本申请引用于2018年8月13日递交的名称为“真空镀膜设备、方法及滤波器腔体膜层的制备方法”的第201810917305.7号中国专利申请，其通过引用被全部并入本申请。
技术领域
本申请涉及但不限于真空镀膜制作领域。
背景技术
真空镀膜是指在一定真空度的环境下，采用沉积技术在基底表面沉积具有一定功能的膜层。
采用物理气相沉积(PVD，Physical Vapor Deposition)技术沉积的膜层具有高硬度、低摩擦系数、很好的耐磨性和化学稳定性等优点，且采用PVD技术镀膜具有很好的环保性，因此受到了广泛应用。
同时为了提高加工效率，产生了连续PVD镀膜设备，然而，相关技术中，与普通的PVD镀膜设备相比，采用连续PVD镀膜设备镀膜确实能够提高产品加工效率，但是其加工效率还是较低的，特别对于大体积零件，加工效率还是非常低的。
发明内容
为解决相关存在的技术问题，本申请实施例提供一种真空镀膜设备、方法及滤波器腔体膜层的制备方法。
本申请实施例的技术方案是这样实现的：
一种真空镀膜设备，所述设备包括：入口压差室、镀膜室、出口压差室；其中，所述入口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的入口连接；针对每条真空线，与所述镀膜室的入口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；所述镀膜室，设置有镀膜设备；所述出口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的出口连接；针对每条真空线，与所述镀膜室的出口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；所述设备还包含传送装置，用于传送用于镀膜的基底。
上述技术方案中，所述镀膜室设置有至少两个用于安放靶材的第一部件。
上述技术方案中，相邻两个第一部件之间设置有第一距离，使得相邻两个第一部件中一个部件上的靶材对应的辐射范围与所述相邻两个第一部件中另一个部件上的靶材对应的辐射范围有重叠区域。
上述技术方案中，所述入口压差室的每条真空线还包含清洗真空室，用于对所述基底进行等离子清洗；所述清洗真空室的真空度小于所述镀膜室的入口连接的真空过渡室的真空度。
上述技术方案中，每条真空线的相邻真空过渡室之间设置有第二部件；当所述基底被传送至相应的真空过渡室时，设置的第二部件实现相邻真空过渡室之间的真空隔离；且当所述基底被传送至下一个相邻的真空过渡室时，设置在与所述下一个相邻的真空过渡室之间的第二部件打开。
上述技术方案中，与所述镀膜室的入口连接的真空过渡室与所述镀膜室之间设置有所述第二部件；所述与所述镀膜室的出口连接的真空过渡室与所述镀膜室之间设置有所述第二部件。
上述技术方案中，所述入口压差室、镀膜室及出口压差室内的传送装置各自独立设置。
上述技术方案中，所述入口压差室的每条真空线对应设置有一个传输装 置；所述出口压差室的每条真空线对应设置有一个传输装置。
上述技术方案中，每个真空室对应设置有一个传输装置。
一种滤波器腔体膜层的制备方法，采用上述任一的真空镀膜设备制备的滤波器腔体膜层。
一种真空镀膜方法，所述方法包括：从真空镀膜设备入口压差室的至少两条真空线中选择一条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联；将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度；当所述基底进入选择的真空线的最后一级真空过渡室，且进入后真空过渡室的真空度与所述镀膜室的真空度相同时，将所述基底传送至所述真空镀膜设备的镀膜室，利用所述镀膜室的镀膜设备在所述基底上沉积膜层；从所述真空镀膜设备的出口压差室的至少两条真空线中选择一条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联；将沉积有膜层的基底依次传送至选择的真空线的各级真空过渡室，并抽真空使真空度达到各真空过渡室对应的预设真空度，以输出沉积有膜层的基底；其中，所述基底通过所述真空镀膜设备的传输装置传送。
上述技术方案中，所述从真空镀膜设备入口压差室的至少两条真空线中选择一条真空线，包括：针对每条真空线，检测相应真空线是否处于真空缓冲状态；所述真空缓冲状态下所述相应真空线不满足向所述镀膜室输送所述基底的条件；确定未处于真空缓冲状态的至少一条真空线；从未处于真空缓冲状态的至少一条真空线中选择一条真空线。
上述技术方案中，所述将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度，包括：针对每个真空过渡室，当将所述基底进入相应真空过渡室时，打开所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，以使所述基底被传送至相应真空过渡室；所述基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并抽真空；真空 度满足所述相应真空过渡室对应的预设真空度时，打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述基底被传送至所述下一个相邻真空过渡室。
上述技术方案中，所述方法还包括：所述基底被传送至所述最后一级真空过渡室，且真空过渡室的真空度与所述镀膜室的真空度相同时，打开所述最后一级真空过渡室与所述镀膜室之间设置的第二部件，以使所述基底被传送至所述镀膜室；传送所述基底至所述镀膜室后，关闭所述最后一级真空过渡室与所述镀膜室之间设置的第二部件。
上述技术方案中，所述从所述真空镀膜设备的出口压差室的至少两条真空线中选择一条真空线，包括：针对每条真空线，检测相应真空线是否处于真空缓冲状态；所述真空缓冲状态下所述相应真空线不满足输出条件；确定未处于真空缓冲状态的至少一条真空线；从未处于真空缓冲状态的至少一条真空线中选择一条真空线。
上述技术方案中，所述将沉积有膜层的基底依次传送至选择的真空线的各级真空过渡室，并抽真空使真空度达到各真空过渡室对应的预设真空度，包括：针对每个真空过渡室，当所述沉积有膜层的基底进入相应真空过渡室时，打开所述相应真空过渡室与沉积有膜层的基底当前所在的真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至相应真空过渡室；所述沉积有膜层的基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并对所述沉积有膜层的基底当前所在的真空过渡室抽真空；打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述下一个相邻真空过渡室。
上述技术方案中，所述方法还包括：当所述基底的膜层沉积完成后，打开与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述与所述镀膜室出口连接的真空过渡室；传送所述沉积有膜层的基底至与所述镀膜室出口连接的真空过渡室后，关闭与 所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件。
上述技术方案中，所述利用所述镀膜室的镀膜设备在所述基底上沉积膜层，包括：当所述基底被传送至安放在所述镀膜室第一部件上的第一靶材对应的辐射范围与第二靶材对应的辐射范围的重叠区域时，受所述第二靶材的辐射，在所述基底上形成过渡层；所述第二靶材安放在与安放所述第一靶材的第一部件间隔第一距离的相邻的第一部件上。
上述技术方案中，所述将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度时，所述方法还包括：将所述基底传送至选择的真空线的清洗真空室，抽真空使真空度达到所述清洗真空室的真空度，并对所述基底进行等离子清洗。
上述技术方案中，制备所述滤波器腔体膜层的靶材包括：Cr靶、Cu靶、Ag靶；沉积膜层时，在所述滤波器腔体上依次沉积Cr层，Cu层，Ag层。
上述技术方案中，制备所述滤波器腔体膜层的靶材包括：Cr靶、Cu靶、Ag-Ta靶；沉积膜层时，在所述滤波器腔体上依次沉积Cr层，Cu层，Ag-Ta层。
上述技术方案中，所述方法还包括：将块状Ta材料均匀镶嵌在Ag板上；将镶嵌Ta材料的Ag板制成Ag-Ta靶材。
上述技术方案中，Ag-Ta靶材中Ag与Ta的表面积比为1:1～10:1。
上述技术方案中，沉积的Ag-Ta层中Ag和Ta的相对原子比为4:1～50:1。
本申请实施例提供的真空镀膜设备、方法及滤波器腔体膜层的制备方法，入口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的入口连接；针对每条真空线，与所述镀膜室的入口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；所述出口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的出口连接；针对每条真空线，与所述镀膜室的出口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；由于入口压差 室和出口压差室为多条真空线并联的结构装置，对于入口压差室，当一条真空线不能输送待沉积样品时，可以选择另外一条真空线输送待沉积样品至镀膜室，从而达到源源不断地向镀膜室输送待沉积样品；对于出口压差室，当一条真空线不能输出完成镀膜的样品时，可以选择另外一条真空线输出完成镀膜的样品，从而达到源源不断地接收从镀膜室输出的完成镀膜的样品，如此，能够完成样品的连续批量加工，从而能够大大提高加工效率。
附图说明
图1为本申请实施例真空镀膜设备结构示意图；
图2为本申请实施例真空镀膜方法流程示意图；
图3为本申请应用实施例真空镀膜设备结构示意图。
具体实施例
下面结合附图及实施例对本申请再作进一步详细的描述。
一种连续PVD镀膜设备是采用多个真空室缓冲以保证镀膜室真空度，缓冲过程中(抽真空或真空调节过程中)，产品处于停止状态，因此在这种情况下，样品是间歇式流入镀膜室，因此，采用这种连续PVD镀膜设备很难提升产品加工效率，特别对于大体积零件，加工效率还是非常低。
基于此，在本申请的各种实施例中，真空镀膜设备的第一部分(称为入口压差室)负责向镀膜室(即真空镀膜设备的第二部分)输送产品；第二部分负责沉积各种不同的膜层；真空镀膜设备的第三部分(称为出口压差室)负责接收镀膜室输出已经完成镀膜的产品；其中，第一部分包含数条真空线，且数条真空线并联，以达到源源不断地向第二部分输送待沉积的样品；第三部分包含数条真空线，且数条真空线并联，以达到源源不断地接收从第二部分输出的已经完成镀膜的样品。
本申请实施例提供的方案，由于入口压差室和出口压差室为多条真空线并联的结构装置，从而能够完成样品的连续批量加工，进而能够大大提高加工 效率。
本申请实施例提供一种真空镀膜设备，如图1所示，该设备包括：入口压差室11、镀膜室12、出口压差室13。
其中，所述入口压差室11设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的入口连接；针对每条真空线，与所述镀膜室12的入口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；所述镀膜室12，设置有镀膜设备；所述出口压差室13设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的出口连接；针对每条真空线，与所述镀膜室12的出口连接的真空过渡室的真空度能够达到所述镀膜室的真空度。
另外，本实施例中，该设备还包含传送装置，用于传送用于镀膜的基底。
本申请实施例提供的真空镀膜设备，从所述入口压差室11的至少两条真空线中选择一条真空线后，将基底依次传送至选择的真空线的各级真空过渡室，抽取真空，以保证基底进入所述镀膜室12后真空度满足镀膜的要求，在所述镀膜室镀膜后，从所述出口压差室13的至少两条真空线中选择一条真空线后，将沉积有膜层的基底依次传送至选择的真空线的各级真空过渡室，最终输出沉积有膜层的基底。
其中，所述至少两条真空线并联是指：所述入口压差室11每条真空线的一端均能够与外界大气相通(也可以理解为联通)，而另一端均与所述镀膜室12的入口连接；相应地，所述出口压差室13每条真空线的一端均与所述镀膜室12的出口连接，另一端均能够与外界大气相通。
真空镀膜设备工作过程中，针对入口压差室11的每条真空线，每个真空过渡室的真空度是不一样的，而且从大气中接收基底的真空过渡室开始，按照连接顺序，真空过渡室的真空度越来越高，且与所述镀膜室12的入口连接的真空过渡室的真空度与所述镀膜室的真空度基本相同；相应地，针对所述出口压差室13的每条真空线，每个真空过渡室的真空度是不一样的，与所述镀膜室的 出口连接的真空过渡室的真空度与达到所述镀膜室的真空度基本相同，而且与所述镀膜室12的入口连接的真空过渡室开始，按照连接顺序，真空过渡室的真空度越来越低，如此，能够保证所述镀膜室12的真空度满足镀膜的要求，而且，采用多级的方式抽真空的方式，能够使每条真空线对应的真空度快速达到设定的真空度。
另外，可以根据需要设置入口压差室11和出口压差室13真空过渡室的个数，比如可以结合镀膜时的真空度以及成本来设置。
本实例中，所述镀膜设备的镀膜技术可以为PVD技术。
基于此，在一实施例中，所述镀膜室可以设置有至少两个用于安放靶材的第一部件，由于设置有至少两个第一部件，从而能够安放不同的靶材，如此，能实现不同膜层的沉积。
当安放多个靶材后，每种靶材之间可以不设隔开措施或特定的距离，这样可以在基地上沉积过渡层，如此，能够增加两膜层之间的结合力。
基于此，在一实施例中，相邻两个第一部件之间可以设置有第一距离，使得相邻两个第一部件中一个部件上的靶材对应的辐射范围与所述相邻两个第一部件中另一个部件上的靶材对应的辐射范围有重叠区域，也就是说，使得所述基底被所述传送装置传送至相邻两个第一部件中一个部件上的靶材对应的辐射范围末端时能够受到所述相邻两个第一部件中另一个部件上的靶材的辐射。
本实施例中，在进入所述镀膜室12之前，需要所述基底足够洁净，以保证沉积的膜层与基底与较强的结合力，因此，在进入所述镀膜室12之前，最好能够对所述基底进行清洗。
基于此，在一实施例中，所述入口压差室11的每条真空线还包含清洗真空室，用于对所述基底进行等离子清洗；所述清洗真空室的真空度小于所述镀膜室的入口连接的真空过渡室的真空度。
其中，本实施例中，可以根据对所述基底进行等离子清洗所需的真空度，将所述清洗真空室设置在真空线的合适位置。
在一实施例中，每条真空线的相邻真空过渡室之间设置有第二部件；当 所述基底被传送至相应的真空过渡室时，设置的第二部件实现相邻真空过渡室之间的真空隔离；且当所述基底被传送至下一个相邻的真空过渡室时，设置在与所述下一个相邻的真空过渡室之间的第二部件打开。
也就是说，在进入所述镀膜室12之前，针对每个真空过渡室，当将所述基底进入相应真空过渡室时，打开所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，以使所述基底被传送至相应真空过渡室。
所述基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并抽真空。
真空度满足所述相应真空过渡室对应的预设真空度时，打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述基底被传送至所述下一个相邻真空过渡室。
其中，所述基底被传送至所述最后一级真空过渡室，且真空过渡室的真空度与所述镀膜室的真空度相同时，打开所述最后一级真空过渡室与所述镀膜室之间设置的第二部件，以使所述基底被传送至所述镀膜室；传送所述基底至所述镀膜室后，关闭所述最后一级真空过渡室与所述镀膜室之间设置的第二部件。
这里，对于清洗真空室对应的第二部件，处理方式与真空过渡室对应的第二部件的处理方式相同，这里不再赘述。
膜层沉积完成后，针对每个真空过渡室，当所述沉积有膜层的基底进入相应真空过渡室时，打开所述相应真空过渡室与沉积有膜层的基底当前所在的真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至相应真空过渡室；
所述沉积有膜层的基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并对所述沉积有膜层的基底当前所在的真空过渡室抽真空；
打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述下一个相邻真空过渡室。
其中，当所述基底的膜层沉积完成后，打开与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述与所述镀膜室出口连接的真空过渡室；传送所述沉积有膜层的基底至与所述镀膜室出口连接的真空过渡室后，关闭与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件。
本实施例中，所述第二部件的形式可以是挡板或门等，并可以额外设置阀门，以打开或关闭所述第二部件。
为了方便调整传送速度，所述入口压差室11、镀膜室12及出口压差室内13的传送装置可以各自独立设置。
另外，对于所述入口压差室11的每条真空线对应设置有一个传输装置；所述出口压差室13的每条真空线对应设置有一个传输装置。
本实施例中，每个真空室对应设置有一个传输装置，由于每个真空室都有独立的传输装置，如此，能够有效地保证各真空室的真空度。
需要说明的是：所述基底是指待沉积膜层的样品。
本实施例中，所述真空镀膜设备还可以有控制设备，用于控制入口压差室11、镀膜室12、出口压差室13的运行。
另外，所述控制设备还可以控制传送装置的运行。
本申请实施例提供的真空镀膜设备，入口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的入口连接；针对每条真空线，与所述镀膜室的入口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；所述镀膜室设置有镀膜设备；所述出口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的出口连接；针对每条真空线，与所述镀膜室的出口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；所述设备还包含传送装置，用于传送用于镀膜的基底，由于入口压差室和出口压差室为多条真空线并联的结构装置，对于入口压差室，当一条真空线不能输送待沉积样品时，可 以选择另外一条真空线输送待沉积样品至镀膜室，从而达到源源不断地向镀膜室输送待沉积样品；对于出口压差室，当一条真空线不能输出完成镀膜的样品时，可以选择另外一条真空线输出完成镀膜的样品，从而达到源源不断地接收从镀膜室输出的完成镀膜的样品，如此，能够完成样品的连续批量加工，从而能够大大提高加工效率。
基于上述设备结构，本申请实施例还提供了一种真空镀膜方法，如图2所示，该方法包括：
步骤201：从真空镀膜设备入口压差室的至少两条真空线中选择一条真空线。
这里，每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联。
本实施例中，需要将所述基底先进行镀膜之前的预处理，这种预处理一般在大气环境(可以理解为外界环境)下进行，这种预处理可以包括：细砂喷砂(类似砂纸打磨的作用)、除油等操作，以便所述基底的表面洁净，且平整。
其中，在一实施例中，本步骤的具体实现可以包括：针对每条真空线，检测相应真空线是否处于真空缓冲状态；所述真空缓冲状态下所述相应真空线不满足向所述镀膜室输送所述基底的条件；确定未处于真空缓冲状态的至少一条真空线；从未处于真空缓冲状态的至少一条真空线中选择一条真空线。
其中，处于真空缓冲状态的真空线是不能够用于传送基底的，因此，只能选择不处于真空缓冲状态的真空线来传送基底。
本实施例中，对于一条真空线，只要这条真空线中与大气相通的真空过渡室暂未空闲即与大气相同的真空过渡室里有基底，则不能选择这条真空线。
本实施例中，当未处于真空缓冲状态的真空线有至少两条(即多条)时，可以根据需要来选择一条真空线，比如随机选择一条真空线等。
需要说明的是：本实施例中，在设备运行过程中，多条真空线并联，多条真空线连续切换，以实现源源不断地向镀膜室输送样品。
步骤202：将基底依次传送至选择的真空线的各级真空过渡室，抽真空 使真空度达到各真空过渡室对应的预设真空度。
具体地，针对每个真空过渡室，当将所述基底进入相应真空过渡室时，打开所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，以使所述基底被传送至相应真空过渡室；所述基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并抽真空；真空度满足所述相应真空过渡室对应的预设真空度时，打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述基底被传送至所述下一个相邻真空过渡室。
其中，所述基底被传送至所述最后一级真空过渡室，且真空过渡室的真空度与所述镀膜室的真空度相同时，打开所述最后一级真空过渡室与所述镀膜室之间设置的第二部件，以使所述基底被传送至所述镀膜室；传送所述基底至所述镀膜室后，关闭所述最后一级真空过渡室与所述镀膜室之间设置的第二部件。
这里，本实施例中，在设备运行过程中，当所述最后一级真空过渡室的真空度达到预设真空度后，如果出现不能像镀膜室输送基底的情况(比如所述镀膜室正在从别的真空线接收基底等)时，所述最后一级真空过渡室继续处于抽真空的状态，此时，这条真空线也可以称为处于真空缓冲状态。
在一实施例中，所述将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度时，所述方法还包括：
将所述基底传送至选择的真空线的清洗真空室，抽真空使真空度达到所述清洗真空室的真空度，并对所述基底进行等离子清洗。
这里，对于清洗真空室对应的第二部件，处理方式与真空过渡室对应的第二部件的处理方式相同，这里不再赘述。
这里，本实施例中，所述预设真空度根据需要设置。
步骤203：当所述基底进入选择的真空线的最后一级真空过渡室，且进入后真空过渡室的真空度与所述镀膜室的真空度相同时，将所述基底传送至所述真空镀膜设备的镀膜室，利用所述镀膜室的镀膜设备在所述基底上沉积膜层。
这里，所述利用所述镀膜室的镀膜设备在所述基底上沉积膜层，包括：当所述基底被传送至安放在所述镀膜室第一部件上的第一靶材对应的辐射范围末端时，受第二靶材的辐射，在所述基底上形成过渡层；所述第二靶材安放在与安放所述第一靶材的第一部件间隔第一距离的相邻的第一部件上。
也就是说，第一靶材和第二靶材的辐射范围有重叠区域，在重叠区域，既可以受第一靶材的辐射，又可以受第二靶材的辐射，从而形成过渡层。
步骤204：从所述真空镀膜设备的出口压差室的至少两条真空线中选择一条真空线。
这里，每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联。
其中，在一实施例中，本步骤的具体实现可以包括：针对每条真空线，检测相应真空线是否处于真空缓冲状态；所述真空缓冲状态下所述相应真空线不满足输出条件；确定未处于真空缓冲状态的至少一条真空线；从未处于真空缓冲状态的至少一条真空线中选择一条真空线。
其中，处于真空缓冲状态的真空线是不能够用于输出沉积有膜层的基底的，因此，只能选择不处于真空缓冲状态的真空线来输出沉积有膜层的基底。
本实施例中，对于一条真空线，只要这条真空线中与镀膜室出口连接的真空过渡室的真空度暂时未达到预设真空度(即未达到与镀膜室基本相同的真空度)，则不能选择这套真空线，此时，这条真空线中与镀膜室出口连接的真空过渡室不能接受镀膜室输出的沉积有膜层的基底。
本实施例中，当未处于真空缓冲状态的真空线有至少两条(即多条)时，可以根据需要来选择一条真空线，比如随机选择一条真空线等。
需要说明的是：本实施例中，在设备运行过程中，多条真空线并联，多条真空线连续切换，以实现源源不断地从镀膜室输出样品。
步骤205：将沉积有膜层的基底依次传送至选择的真空线的各级真空过渡室，并抽真空使真空度达到各真空过渡室对应的预设真空度，以输出沉积有膜层的基底。
具体地，针对每个真空过渡室，当所述沉积有膜层的基底进入相应真空过渡室时，打开所述相应真空过渡室与沉积有膜层的基底当前所在的真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至相应真空过渡室；所述沉积有膜层的基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并对所述沉积有膜层的基底当前所在的真空过渡室抽真空；打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述下一个相邻真空过渡室。
这里，需要说明的是：所述沉积有膜层的基底进入一个真空过渡室，且关闭与前一个相邻真空过渡室之间设置的第二部件后，所述沉积有膜层的基底即可进入下一个相邻的真空过渡室，无需关心前一个相邻真空过渡室的真空度。
当所述基底的膜层沉积完成后，打开与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述与所述镀膜室出口连接的真空过渡室；传送所述沉积有膜层的基底至与所述镀膜室出口连接的真空过渡室后，关闭与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件。
其中，所述基底是通过所述真空镀膜设备的传输装置传送的。
腔体滤波器是一种重要的电子器件，在雷达、微波、通讯等领域有着广泛的应用。目前工业用腔体滤波器的腔体普遍为镁基体或铝基体，因其对腔体导电性的特殊要求，其表面处理方法多采用电镀银工艺对腔体进行表面处理，而滤波器电镀银工艺多为剧毒氰化物电镀工艺，对人体健康以及环境影响较大。
基于此，本申请实施例还提供了一种滤波器腔体膜层的制备方法，采用上述真空镀膜设备来制备滤波器腔体膜层。
其中，所述滤波器腔体为基底，也可以理解为基材。
本实施例中，所述滤波器腔体可以为镁基体或铝基体。
在一实施例中，制备所述滤波器腔体膜层的靶材可以包括：Cr靶、Cu靶、Ag靶；沉积膜层时，在所述滤波器腔体上依次沉积Cr层，Cu层，Ag层。
其中，Cr层为腔体与Cu层之间的过渡层。
在一实施例中，制备所述滤波器腔体膜层的靶材包括：Cr靶、Cu靶、Ag-Ta靶；沉积膜层时，在所述滤波器腔体上依次沉积Cr层，Cu层，Ag-Ta层。
下面结合应用实施例对本申请再作进一步详细的描述。
在本应用实施例中，如图3所示，入口压差室11包含3条真空线，且每条真空线包含真空过渡室111、真空过渡室112、真空过渡室113、清洗真空室114及真空过渡室115，且真空过渡室111、真空过渡室112、真空过渡室113、清洗真空室114及真空过渡室115依次连接，且真空室之间设置有挡板31(上述的第二部件，本实施例中，也可以为门)，具体包括挡板311、挡板312、挡板313、挡板314、挡板315。其中，由于真空过渡室111能够与外界大气联通，且负责接送待沉积的样品，所以也可以称为进样真空室；真空过渡室111通过门32与外界大气联通。
出口压差室13也包含3条真空线，且每条真空线包含真空过渡室131、真空过渡室132、真空过渡室133、及真空过渡室134。真空过渡室131、真空过渡室132、真空过渡室133、及真空过渡室134依次连接，且真空室之间设置有挡板33(上述的第二部件)，具体包括挡板331、挡板332、挡板333、挡板334。其中，由于真空过渡室134能够与外界大气联通，且负责输出样品，所以也可以称为出样真空室；真空过渡室134通过门34与外界大气联通。
下面对各部分的功能进行详细描述。
对于所述入口压差室11，设置在真空室之间的挡板31，可被打开或关闭，实现真空室之间的联通或真空隔离；设备工作过程中，每个真空室两端的挡板只允许一端打开，即每个真空室一端挡板即将打开或者已经打开时，另外一端的挡板或门必须处于关闭状态。
结合图3，当设备处于工作状态时，每条真空线的工作步骤如下：
步骤A：打开门32，将一定数量的产品放置在传送装置35上的载物装置上，关闭门32，并对进样后的真空过渡室111抽真空至设置的真空度。
步骤B：松开(也可以理解为打开)挡板311，样品进入真空过渡室112，关闭挡板311，并对真空过渡室112抽真空至规定的真空度。同时，对真空过渡室111放气至正常大气压，打开门32，以便开始重新从外界装入样品。
步骤C：松开挡板312，样品进入真空过渡室113，关闭挡板312，并对真空过渡室113抽真空至设置的真空度。
步骤D：松开挡板313，产品进入等清洗真空室114，关闭挡板313，调节等清洗真空室114真空度至设定的真空度，再对样品进行等离子清洗。
步骤E：松开挡板314，产品进入真空过渡室115，关闭挡板314，并对真空过渡室115抽真空至与镀膜室12相同的真空度。
步骤F：松开挡板315，将待镀膜的样品传送至镀膜室12，关闭挡板315，至此完成待镀膜产品的输送过程。
其中，对于入口压差室11，当某条真空线处于真空缓冲状态下时，此条真空线暂停对镀膜室输送产品；与此同时，其它与其并联的真空线在这段时间内(真空线处于真空缓冲状态的时间段内)负责向镀膜室12输送产品，通过数条并联的真空线交叉输送，镀膜室12能够连续、源源不断地从入口压差室11接收待镀膜的产品。
另外，当某条真空线具备向镀膜室12输送产品的条件时(即该条真空线中的真空过渡室115装载有产品，且真空度已经达到设定的真空度要求)，且镀膜室12正在从另外一条真空线上接收产品时，则该条真空线的产品保持静止状态，当另外一条真空线上的产品输送完毕后，再松开该真空线的挡板315，开始向镀膜室12输送产品。由控制设备来控制上述过程，通过这种方式，可保证多条输送真空线工作密切配合的同时，不发生输送冲突。
除此以外，可以根据实际需要，增加真空室的数量，缩短真空缓冲的时间，提升加工效率，例如在图3所示的真空过渡个数的基础上，在清洗真空室114前再增加一个或多个真空过渡室，或者，还可以增加清洗真空室114的数量，提升等离子清洗的效率等。
对于所述镀膜室12，镀膜室12的上部并排装有一定数量的靶位36(上 述的第一部件)，方便安装不同的靶材，可得到不同的镀层。靶材正下方有产品传送装置37，传送速度可调，比如可以根据沉积的镀层的厚度调整等。
如图3所示，镀膜室12的前端带有数条平行的传送装置，一一对应入口压差室11的数条真空线，按顺序将入口压差室11传送过来的产品输送至传送装置37；镀膜室12的后端带有数条平行的传送装置，一一对应出口压差室13的数条真空线，按顺序将完成镀膜的产品从产品传送装置37输送至对应的出口压差室13的真空线。
本实施例中，可根据需要，在入口压差室11和出口压差室13产能支持的前提下，延长镀膜室12通道的长度，增加上部靶材数量，提升传送装置37链条运行速度，可大幅度提升加工效率。
本实施例中，可根据需要，灵活配置镀层的各类靶材实现不同镀层成膜，实现不同合金镀层成膜。
对于出口压差室13，与所述入口压差室11中的挡板31类似的，设置在真空室之间的挡板33，可打开或关闭，实现真空室之间联通或真空隔离；设备工作过程中，每个真空室两端的挡板只允许一端打开，即每个真空室一端的挡板即将打开或者已经打开时，另外一端的挡板必须处于关闭状态。
结合图3，当设备处于连续镀膜工作状态，每条真空线的工作步骤如下：
步骤A：打开挡板331，完成镀膜的产品从镀膜室12进入真空过渡室131，通过放置在传送装置38上进入真空过渡室131，关闭挡板331。
步骤B：打开挡板332，产品进入真空过渡室132，关闭挡板332。同时对真空过渡室131抽真空，当真空度达到与镀膜室12相同真空度后，准备重新从镀膜室12接收产品。
步骤C：打开挡板333，产品进入真空过渡室133，关闭挡板333。同时，对真空过渡室132抽真空，当达到规定的真空度后，准备重新从真空过渡室131接收产品。
步骤D：打开挡板334，产品进入真空过渡室134，关闭挡板334。同时，对真空过渡室133抽真空，当达到规定的真空度后，准备重新从真空过渡 室132接收产品。
步骤E：对真空过渡室134放气至正常大气压后，打开门34，取出完成镀膜的产品，关闭门34，并对真空过渡室134抽真空至规定的真空度，准备重新从真空过渡室133接收产品。至此，完成产品的输出。
至此，完成整个镀膜过程。
其中，当某条真空线处于真空缓冲状态下(抽真空时间内)时，此条真空线暂停输送产品；与此同时，其它与其并联的真空线在这段时间内(真空线处于真空缓冲状态的时间段内)负责接收镀膜室12输送的产品(控制设备检测到该真空线的真空度不符合要时，会选择其它真空线来负责接收镀膜室12输送的产品)，通过数条并联的真空线交叉运行，能够连续、源源不断地将镀膜室12中完成镀膜的产品传送出来。
另外，当某条真空线具备接收镀膜室12输送的产品条件时(即该条真空线中的真空过渡室131无产品，且真空度已经达到规定的要求)，而镀膜室12正在往另外一条真空线上传送产品，则该条真空线产品保持静止状态，当往另外一条真空线上的产品传送完毕后，松开该真空线挡板331，开始接收镀膜室12输送的产品。通过这种方式，可保证每条真空线工作密切配合的同时，不发生传送冲突。
除此以外，可以根据实际需要，增加真空过渡室的数量，缩短真空缓冲的时间，提升加工效率，例如在真空过渡室134前再增加一个或多个真空过渡室等。
在本应用实施例中，利用上面描述的过程在滤波器腔体沉积膜层。
具体地，首先，滤波器产品通过进入压差室11被传送至镀膜室12；
这里，传送的具体过程可参照上述入口压差室11的工作过程来理解。
接着，在镀膜室12，滤波器的腔体沉积膜层。
这里，针对滤波器腔体，镀膜室12的上部安装的靶材依次是Cr靶、Cu靶、Ag(或Ag-Ta拼装靶，可以根据需要来选择)，滤波器产品在传送装置37链条的带动下，依次沉积Cr、Cu、Ag(或Ag-Ta合金，取决于靶材)三层 镀层，其中Cr镀层最薄，起到基材与镀层的过渡作用，Cu层较厚，是滤波器表面最主要的导电层，滤波器产品最外层沉积较薄的Ag(或Ag-Ta合金)层，主要目的是导电和保护铜层不被氧化。
其中，使用Ag-Ta拼装靶目的是得到Ta含量较低的Ag-Ta合金镀层，既保证了良好的导电性，又提升了滤波器最外层镀层抗氧化性能。
本实施例中，Ag-Ta拼装靶的制作方法是：将数量不等的小块状Ta材料均匀镶嵌在Ag板上，并将镶嵌Ta材的Ag板加工成靶材，比如进行机械加工、设置背板等，最终得到Ag-Ta拼装靶，为保证良好的导电性和一定的抗氧化性能，滤波器产品所需的Ag-Ta拼装靶Ag和Ta的表面积比范围可以为：1:1～10:1，得到的Ag-Ta合金膜层中Ag和Ta的相对原子比范围可以为：4:1～50:1。
其中，本实施例中，为了使得沉积的薄膜中材料分布均匀，可以使用规格一致的块状Ta材料。
块状Ta的大小可以根据需要设置。
所述均匀镶嵌是指：Ag板的单位面积内均镶嵌一块状Ta材料。更具体地，将一块Ag板，将其表面(做成靶材后在沉积过程中朝向滤波器产品的一面)均匀分成N块，每块均镶嵌一块Ta材料。
这里，本实施例中，以能够使沉积的薄膜中材料分布均匀为原则，来设置N的取值。N为大于或等于2的整数。
所述表面积可以理解为有效工作面积，通俗地讲，可以理解为靶材表面外露的面积。这里，靶材表面外露的面积是指：在沉积过程中靶材朝向滤波器产品的一面的面积。
除此以外，镀膜室12的上部，依次安装数量不等的Cr靶、Cu靶、Ag靶(或Ag-Ta拼装靶)三种靶材，每种靶材之间不设隔开措施或特定的距离，使得滤波器产品传送至一种靶材辐射范围的末端时，会受到相邻的第二种靶材的辐射，从而形成较薄的合金层，如滤波器产品在即将离开Gr靶范围区域时，下一区域的Cu靶能够将Cu原子沉积在滤波器产品上，因此，会形成较薄的 Cr-Cu合金过渡层，两层镀层之间结合力更好。
本实施例中，也可对拼装靶材调节不同合金及其合金比例。
在上述步骤的前提下，通过调整各类靶材的溅射功率，传送装置37链条运行速度，在滤波器腔体表面得到不同厚度的复合导电膜层，调整Ag-Ta拼装靶中Ag和Ta发生溅射的面积比，在滤波器表面复合导电膜层最外层得到Ag与Ta不同原子比例的Ag-Ta合金镀层，具体如下：
具体实施例1
按上述介绍的滤波器产品前处理方案及PVD连续镀膜步骤进行操作，镀膜室12中依次安装一定数量的Cr靶，Cu靶，Ag靶，并根据各类靶材的辐射范围以及传送装置37链条运行速度等调节镀膜室各种参数，如表1所示：
Figure PCTCN2019100441-appb-000001
表1
按照表1所示的参数，在滤波器腔体表面得到的Cu层厚度为8μm，Ag层厚度为1μm的复合导电膜层(Cr层属于基体和镀层的过渡层，不做厚度要求)。
具体实施例2
按照上述介绍的滤波器产品前处理方案及PVD连续镀膜步骤进行操作，镀膜室12中依次安装一定数量的Cr靶，Cu靶，Ag-Ta拼装靶，其中Ag-Ta拼装靶Ag与Ta发生溅射的面积比为8:1，并根据各类靶材的辐射范围以及传送装置37链条运行速度等调节镀膜室各种参数，如表2所示：
Figure PCTCN2019100441-appb-000002
Figure PCTCN2019100441-appb-000003
表2
按照表2所示的参数，在滤波器腔体表面得到的Cu层厚度为8μm，Ag-Ta合金镀层厚度为0.9μm的复合导电膜层，其中Ag-Ta合金镀层中Ag和Ta的原子百分比为40:1(Cr层属于基体和镀层的过渡层，不做厚度要求)。
具体实施例3
按照上述介绍的滤波器产品前处理方案及PVD连续镀膜步骤进行操作，镀膜室12中依次安装一定数量的Cr靶，Cu靶，Ag-Ta拼装靶，其中Ag-Ta拼装靶Ag与Ta发生溅射的面积比为4:1，并根据各类靶材的辐射范围以及传送装置37链条运行速度等调节镀膜室各种参数，如表3所示：
Figure PCTCN2019100441-appb-000004
表3
按照表3所示的参数，在滤波器腔体表面得到的Cu层厚度为7μm，Ag-Ta合金镀层厚度为1.1μm的复合导电膜层，其中Ag-Ta合金镀层中Ag和Ta的原子百分比为20：1(Cr层属于基体和镀层的过渡层，不做厚度要求)。
具体实施例4
按照上述介绍的滤波器产品前处理方案及PVD连续镀膜步骤进行操作，镀膜室8中依次安装一定数量的Cr靶，Cu靶，Ag-Ta拼装靶，其中Ag-Ta拼装靶Ag与Ta发生溅射的面积比为2:1，并根据各类靶材的辐射范围以及传送装置37链条运行速度等调节镀膜室各种参数，如表4所示：
Figure PCTCN2019100441-appb-000005
表4
按照表4所示的参数，在滤波器腔体表面得到的Cu层厚度为9μm，Ag-Ta合金镀层厚度为1.2μm的复合导电膜层，其中Ag-Ta合金镀层中Ag和Ta的原子百分比为10：1(Cr层属于基体和镀层的过渡层，不做厚度要求)。
从上面的描述可以看出，本申请实施例真空镀膜设备的入口压差室和出口压差室通过数条真空线并联的结构装置，源源不断地向镀膜室输送待沉积的产品，以及源源不断接收镀膜室输出的已经完成镀膜的滤产品，这样，真空缓冲不再是连续真空镀膜加工效率提升的瓶颈，因此，会大幅度提升沉积工艺效率。
另外，针对滤波器腔体产品，本申请实施例镀膜室上方采用Ag-Ta拼装靶沉积Ag-Ta合金镀层，Ag-Ta拼装靶材采用简单的金属之间相互镶嵌结合的制备方法，较传统的合金靶材(采用冶金的方式得到合金并制作成靶材，比如熔炼或粉末冶金等，制作难度大，周期长)靶材制作难度降低，元素成分调节灵活性提高。
除此以外，针对滤波器腔体产品，采用Ag-Ta拼装靶沉积高银低钽的Ag-Ta合金膜层，作为滤波器最外层的镀层，因Ta本身具有优良的抗氧化性能，与传统的最外层为Ag层的氧化性能比，滤波器表面得到的Ag-Ta合金镀层抗氧化性能提升。
镀膜室中，每种靶材之间不设隔开措施或特定的距离，则滤波器产品传送至一种靶材辐射范围的末端时，会受到相邻的第二种靶材的辐射，从而形成较薄的合金层，作为两种不同镀层之间的过渡层，两层镀层之间结合力较传统的无过渡层的结合方式更加优良。
需要说明的是：图3示出入口压差室设置有五个真空室、出口压差室设置有四个真空室的示例。然而，本实施例中，实施例不限于此，比如，在一实施例中，入口压差室设置有四个或者六个真空室等，出口压差室设置有五个或六个真空室等。
本领域普通技术人员可以理解，上文中所公开方法中的全部或某些步骤、系统、装置中的程序模块或单元可以被实施为软件、固件、硬件及其适当的组合。在硬件实施例中，在以上描述中提及的功能模块或单元之间的划分不一定对应于物理组件的划分；例如，一个物理组件可以具有多个功能，或者一个功能或步骤可以由若干物理组件合作执行。某些组件或所有组件可以被实施为由处理器，如数字信号处理器或微处理器执行的软件，或者被实施为硬件，或者被实施为集成电路，如专用集成电路。这样的软件可以分布在计算机可读介质上，计算机可读介质可以包括计算机存储介质(或非暂时性介质)和通信介质(或暂时性介质)。如本领域普通技术人员公知的，术语计算机存储介质包括在用于存储信息(诸如计算机可读指令、数据结构、程序模块或其他数据)的任何方法或技术中实施的易失性和非易失性、可移除和不可移除介质。计算机存储介质包括但不限于RAM、ROM、EEPROM、闪存或其他存储器技术、CD-ROM、数字多功能盘(DVD)或其他光盘存储、磁盒、磁带、磁盘存储或其他磁存储装置、或者可以用于存储期望的信息并且可以被计算机访问的任何其他的介质。此外，本领域普通技术人员公知的是，通信介质通常包含计算机可读指令、数据结构、程序模块或者诸如载波或其他传输机制之类的调制数据信号中的其他数据，并且可包括任何信息递送介质。
另外，本申请实施例所记载的技术方案之间，在不冲突的情况下，可以任意组合。
以上所述，仅为本申请的较佳实施例而已，并非用于限定本申请的保护范围。

Claims (24)

  1. 一种真空镀膜设备，其特征在于，所述设备包括：入口压差室、镀膜室、出口压差室；其中，
    所述入口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的入口连接；针对每条真空线，与所述镀膜室的入口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；
    所述镀膜室，设置有镀膜设备；
    所述出口压差室设置有至少两条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联，且每条真空线的一端均与所述镀膜室的出口连接；针对每条真空线，与所述镀膜室的出口连接的真空过渡室的真空度能够达到所述镀膜室的真空度；
    所述设备还包含传送装置，用于传送用于镀膜的基底。
  2. 根据权利要求1所述的设备，其特征在于，所述镀膜室设置有至少两个用于安放靶材的第一部件。
  3. 根据权利要求2所述的设备，其特征在于，相邻两个第一部件之间设置有第一距离，使得相邻两个第一部件中一个部件上的靶材对应的辐射范围与所述相邻两个第一部件中另一个部件上的靶材对应的辐射范围有重叠区域。
  4. 根据权利要求1所述的设备，其特征在于，所述入口压差室的每条真空线还包含清洗真空室，用于对所述基底进行等离子清洗；所述清洗真空室的真空度小于所述镀膜室的入口连接的真空过渡室的真空度。
  5. 根据权利要求1所述的设备，其特征在于，每条真空线的相邻真空过渡室之间设置有第二部件；当所述基底被传送至相应的真空过渡室时，设置的第二部件实现相邻真空过渡室之间的真空隔离；且当所述基底被传送至下一个相邻的真空过渡室时，设置在与所述下一个相邻的真空过渡室之间的第二部件打开。
  6. 根据权利要求5所述的设备，其特征在于，与所述镀膜室的入口连接的真空过渡室与所述镀膜室之间设置有所述第二部件；所述与所述镀膜室的出口连接的真空过渡室与所述镀膜室之间设置有所述第二部件。
  7. 根据权利要求1所述的设备，其特征在于，所述入口压差室、镀膜室及出口压差室内的传送装置各自独立设置。
  8. 根据权利要求7所述的设备，其特征在于，所述入口压差室的每条真空线对应设置有一个传输装置；所述出口压差室的每条真空线对应设置有一个传输装置。
  9. 根据权利要求7所述的设备，其特征在于，每个真空室对应设置有一个传输装置。
  10. 一种真空镀膜方法，其特征在于，所述方法包括：
    从真空镀膜设备入口压差室的至少两条真空线中选择一条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联；
    将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度；
    当所述基底进入选择的真空线的最后一级真空过渡室，且进入后真空过渡室的真空度与所述镀膜室的真空度相同时，将所述基底传送至所述真空镀膜设备的镀膜室，利用所述镀膜室的镀膜设备在所述基底上沉积膜层；
    从所述真空镀膜设备的出口压差室的至少两条真空线中选择一条真空线；每条真空线包含至少两级依次连接的真空过渡室；所述至少两条真空线并联；
    将沉积有膜层的基底依次传送至选择的真空线的各级真空过渡室，并抽真空使真空度达到各真空过渡室对应的预设真空度，以输出沉积有膜层的基底；
    其中，所述基底通过所述真空镀膜设备的传输装置传送。
  11. 根据权利要求10所述的方法，其特征在于，所述从真空镀膜设备入口压差室的至少两条真空线中选择一条真空线，包括：
    针对每条真空线，检测相应真空线是否处于真空缓冲状态；所述真空缓冲状态下所述相应真空线不满足向所述镀膜室输送所述基底的条件；
    确定未处于真空缓冲状态的至少一条真空线；
    从未处于真空缓冲状态的至少一条真空线中选择一条真空线。
  12. 根据权利要求10所述的方法，其特征在于，所述将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度，包括：
    针对每个真空过渡室，当将所述基底进入相应真空过渡室时，打开所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，以使所述基底被传送至相应真空过渡室；
    所述基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并抽真空；
    真空度满足所述相应真空过渡室对应的预设真空度时，打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述基底被传送至所述下一个相邻真空过渡室。
  13. 根据权利要求12所述的方法，其特征在于，所述方法还包括：
    所述基底被传送至所述最后一级真空过渡室，且真空过渡室的真空度与所述镀膜室的真空度相同时，打开所述最后一级真空过渡室与所述镀膜室之间设置的第二部件，以使所述基底被传送至所述镀膜室；
    传送所述基底至所述镀膜室后，关闭所述最后一级真空过渡室与所述镀膜室之间设置的第二部件。
  14. 根据权利要求10所述的方法，其特征在于，所述从所述真空镀膜设备的出口压差室的至少两条真空线中选择一条真空线，包括：
    针对每条真空线，检测相应真空线是否处于真空缓冲状态；所述真空缓冲状态下所述相应真空线不满足输出条件；
    确定未处于真空缓冲状态的至少一条真空线；
    从未处于真空缓冲状态的至少一条真空线中选择一条真空线。
  15. 根据权利要求10所述的方法，其特征在于，所述将沉积有膜层的基底依次传送至选择的真空线的各级真空过渡室，并抽真空使真空度达到各真空过渡室对应的预设真空度，包括：
    针对每个真空过渡室，当所述沉积有膜层的基底进入相应真空过渡室时，打开所述相应真空过渡室与沉积有膜层的基底当前所在的真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至相应真空过渡室；
    所述沉积有膜层的基底进入所述相应真空过渡室后，关闭所述相应真空过渡室与所述基底当前所在的真空过渡室之间设置的第二部件，并对所述沉积有膜层的基底当前所在的真空过渡室抽真空；
    打开所述相应真空过渡室与下一个相邻真空过渡室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述下一个相邻真空过渡室。
  16. 根据权利要求15所述的方法，其特征在于，所述方法还包括：
    当所述基底的膜层沉积完成后，打开与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件，以使所述沉积有膜层的基底被传送至所述与所述镀膜室出口连接的真空过渡室；
    传送所述沉积有膜层的基底至与所述镀膜室出口连接的真空过渡室后，关闭与所述镀膜室出口连接的真空过渡室与所述镀膜室之间设置的第二部件。
  17. 根据权利要求10所述的方法，其特征在于，所述利用所述镀膜室的镀膜设备在所述基底上沉积膜层，包括：
    当所述基底被传送至安放在所述镀膜室第一部件上的第一靶材对应的辐射范围与第二靶材对应的辐射范围的重叠区域时，受所述第二靶材的辐射，在所述基底上形成过渡层；所述第二靶材安放在与安放所述第一靶材的第一部件间隔第一距离的相邻的第一部件上。
  18. 根据权利要求10所述的方法，其特征在于，所述将基底依次传送至选择的真空线的各级真空过渡室，抽真空使真空度达到各真空过渡室对应的预设真空度时，所述方法还包括：
    将所述基底传送至选择的真空线的清洗真空室，抽真空使真空度达到所述清洗真空室的真空度，并对所述基底进行等离子清洗。
  19. 一种滤波器腔体膜层的制备方法，其特征在于，采用权利要求1至8任一项所述的真空镀膜设备制备的滤波器腔体膜层。
  20. 根据权利要求19所述的方法，其特征在于，制备所述滤波器腔体膜层的靶材包括：Cr靶、Cu靶、Ag靶；沉积膜层时，在所述滤波器腔体上依次沉积Cr层，Cu层，Ag层。
  21. 根据权利要求19所述的方法，其特征在于，制备所述滤波器腔体膜层的靶材包括：Cr靶、Cu靶、Ag-Ta靶；沉积膜层时，在所述滤波器腔体上依次沉积Cr层，Cu层，Ag-Ta层。
  22. 根据权利要求21所述的方法，其特征在于，所述方法还包括：
    将块状Ta材料均匀镶嵌在Ag板上；
    将镶嵌Ta材料的Ag板制成Ag-Ta靶材。
  23. 根据权利要求22所述的方法，其特征在于，Ag-Ta靶材中Ag与Ta的表面积比为1:1～10:1。
  24. 根据权利要求21所述的方法，其特征在于，沉积的Ag-Ta层中Ag和Ta的相对原子比为4:1～50:1。
PCT/CN2019/100441 2018-08-13 2019-08-13 真空镀膜设备、方法及滤波器腔体膜层的制备方法 WO2020034967A1 (zh)

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