TWM396826U - Cluster type continuous film coating device - Google Patents

Cluster type continuous film coating device Download PDF

Info

Publication number
TWM396826U
TWM396826U TW099217249U TW99217249U TWM396826U TW M396826 U TWM396826 U TW M396826U TW 099217249 U TW099217249 U TW 099217249U TW 99217249 U TW99217249 U TW 99217249U TW M396826 U TWM396826 U TW M396826U
Authority
TW
Taiwan
Prior art keywords
chamber
sputtering
transfer
substrate
cluster
Prior art date
Application number
TW099217249U
Other languages
Chinese (zh)
Inventor
Yu-Yao Chen
Original Assignee
E Heng Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E Heng Technology Co Ltd filed Critical E Heng Technology Co Ltd
Priority to TW099217249U priority Critical patent/TWM396826U/en
Publication of TWM396826U publication Critical patent/TWM396826U/en

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Description

M396826 五、新型說明: 【新型所屬之技術領域】 本新型是有關於一種連續鍍膜裝置,特別是指一種群 集式連續鍍膜裝置。 【先前技術】 3C用品,例如:手機或筆記型電腦等,若是選擇用塑 膠材貝來松製其外部機殼,通常在機殼表面需要再施以錢 金屬膜的步驟來加強其耐刮、抗姓的能力,或者用來提昇 外觀質感的裝飾性鍍膜。在塑膠機殼上金屬化還有一個主 要目的在於防制電磁輻射的干擾(Electr〇magnetic 如他rence ’職),已知在鍍膜結構上、多層的金屬膜將 比單層金屬膜具有較佳的電磁屏蔽效果。 參閱圖卜顯示一種常見用來滅鍍多層薄膜於一待鍍 基板10的連續式(In-line)多腔(Multi_chambers)錢膜裝置" 9 ’其包含—進件腔座91、—進件緩衝腔座92、四個可設 置不同乾材而賤鍍出不同薄膜材質的製程腔座931〜934、 -出件緩衝腔座94,以及一出件腔座%。在圖",上 述之各腔座由左而右依序組合排列成一直列狀。所述製程 腔座931〜934提供真空滅鍍的功能,因此需悝保持在高真 空的狀態下;而該進件緩衝腔座92及出件緩衝腔座%内 可實施抽氣(Pumping)與充氣(venting)的反覆程序使盆内 部壓力在低真空與高真空間變化。另外,該進件腔座Μ 與出2腔座95亦可進行抽氣與充氣的程序,使其内部屋 力在常壓與低真空間變化。 3 M396826 鍍膜進行時’第一片待鍍基板丨〇是在常壓的狀態下 由進件腔座91送入,然後在進件腔座91中等待抽氣至預 定的低真空度後’再傳送進入該進件緩衝腔座92。在該進 件緩衝腔座92抽氣並達到高真空狀態的同時,第二片待 鍍基板10送入該進件腔座91中、而第一片待鍍基板1〇 傳送進入位於最左侧的製程腔座931中。其中,位在圖j 左側之前兩個製程腔座931、932是分別用來濺鍍相同的 ‘ 金屬材質以形成第一層鍍層,而接續其後的另一個製程腔 座933是用來濺鍍第二層鍍層,而位在最右側之製程腔座隹 934則用來濺鍍第三層鍍層,如此,便完成多層疊膜的結 構。之後,待鍍基板1〇再依序由該出件緩衝腔座94,及 出件腔座95送出。而前述之第二片待鍍基板1〇亦依循第 一片待鍍基板10之方式依序前進,因此,即可不斷地傳 送新的待鍍基板10來達到連續式鍍膜工作。 要說明的是,用於抗電磁波的多層膜結構中,位於最 iffes ΛΛ" Λ-». . - _M396826 V. New description: [New technical field] The present invention relates to a continuous coating device, in particular to a cluster continuous coating device. [Prior Art] 3C products, such as mobile phones or notebook computers, if you choose to use plastic materials to loosen the outer casing, you usually need to apply a metal film on the surface of the casing to strengthen the scratch resistance. The ability to resist surnames, or decorative coatings used to enhance the appearance of the texture. Metallization on plastic casings also has a main purpose to prevent electromagnetic radiation interference (Electr〇magnetic, such as his Rence's job). It is known that multi-layer metal films will be better than single-layer metal films on the coating structure. Electromagnetic shielding effect. Referring to FIG. 2b, a continuous (In-line) multi-chambers money film device is commonly used for extruding a multilayer film on a substrate 10 to be plated. The buffer chamber 92, the four process chambers 931-934, the outlet buffer chamber 94, and the outlet chamber, which can be provided with different dry materials, are plated with different film materials. In the figure ", each of the above-mentioned chambers is arranged in a row from left to right in a sequence. The process chambers 931-934 provide the function of vacuum de-plating, so that the crucible is maintained in a high vacuum state; and the pumping chamber seat 92 and the output buffer chamber seat can be pumped and pumped. The venting repeat procedure causes the internal pressure of the basin to vary between low vacuum and high vacuum. In addition, the inlet chamber and the outlet chamber 95 can also be subjected to a process of pumping and aerating, so that the internal force changes between normal pressure and low vacuum. 3 M396826 When the coating is in progress, the first substrate to be plated is fed from the inlet chamber 91 under normal pressure, and then waits for pumping to the predetermined low vacuum in the inlet chamber 91. Transfer into the inlet buffer pocket 92. While the inlet buffer chamber 92 is evacuated and reaches a high vacuum state, the second substrate to be plated 10 is fed into the inlet chamber 91, and the first substrate to be plated is transferred to the leftmost side. In the process chamber 931. Wherein, before the left side of the figure j, the two process chamber seats 931, 932 are respectively used to sputter the same 'metal material to form the first layer plating layer, and the other process chamber seat 933 is used for sputtering. The second layer of plating, while the process chamber 934 located at the far right side is used to sputter a third layer of coating, thus completing the structure of the multilayer film. Thereafter, the substrate to be plated 1 is sequentially sent out from the output buffer chamber 94 and the outlet chamber 95. The second substrate to be plated 1 is also sequentially advanced in accordance with the first substrate 10 to be plated, so that a new substrate 10 to be plated can be continuously transferred to achieve continuous coating. It should be noted that in the multilayer film structure for resisting electromagnetic waves, it is located at the most iffes ΛΛ" Λ-». . - _

了提升單位時間可完成鍍膜的件數, ’濺鍍第一層鍍膜的工 厚, 作通常分配給前面兩個製程腔座931、932來分別完成。 由上述可知,傳統的直線式鑛膜裝置9在設計上雖然The number of coatings can be completed per unit time, and the thickness of the first coating is usually assigned to the first two processing chambers 931, 932. As can be seen from the above, the conventional linear mineral film device 9 is designed though

及產能上的提昇仍有很大改善的空間 ’產線的運作速度, °再者,腔座以直線 4 M396826 式排列亦有佔地空間較大的缺點。 【新型内容】 因此,本新型之目的,即在提供一種能改善製程流暢 度,並提昇產線運作速度的群集式連續鍍膜裝置。And the improvement in production capacity still has a lot of room for improvement. The operating speed of the production line, ° Furthermore, the arrangement of the cavity in a straight line 4 M396826 also has the disadvantage of occupying a large space. [New content] Therefore, the purpose of the present invention is to provide a cluster-type continuous coating device capable of improving process fluency and increasing the speed of production line operation.

於是,本新型之群集式連續鍍膜裝置用以輸送一基板 沿著一產線方向前進,並在該基板上形成數層鍍膜,該鍍 膜裝置包含一進件腔座、一出件腔座、一轉運腔座、一第 濺鍍單元、一第二濺鍍單元,以及一動力輸送單元。該 進件腔座包括一供該基板進入的進料端,以及一個與該進 料端間隔的起始端;該出件腔座與該進件腔座相間隔地 位在該產線方向的相反側,並具有一終止端,以及—出料 端,該轉運腔座位在該進件腔座的起始端並包括一個連 續輸出端,以及至少兩個轉運輸出端;該第一濺鍍單元包 括至产少兩個分別與該轉運腔座的其中—個轉運輸出端= 接的第-濺鍍腔座;該第二濺鍍單元連接於該轉運腔座 的連續輸出端與該出件腔座的終止端間;該動力輪送單 元用以將該基板依序於進件腔座、轉運腔座、第一濺鍍= 元、第二賤鑛單元及出件腔座間傳送。 本新型之功效在於:利用所述動力輸送單元,可傳送 至少-片以上的基板由轉運腔座進入第—濺鍍單元内同 時進行_卫作,如此,可達到減少基板間置時間 昇整體產能的功效。 【實施方式】 特點與功效,在 有關本新型之前述及其他技術内容 5 ::配合參考圖式之二個較佳實施例的詳細 清楚的呈現。 将可 在本新型被詳細描述之前, 明内容中,類似的元件是以相门 下的說 件疋以相同的編號來表示。 杜杳參閱圖2 3’本新型的群集式連續鑛膜裝置的第 佳實施例除了可在一美把L息 达认、、 基板1上疊構形成三層薄膜,並可陕 續輸送下一片基板丨以 ^ 的輸送過程中是藉㈣/t續式祕膜工作,而在每次 疋糟由傳輸一個可承載個別基板1的栽夏 11。所述鍍膜裝置包含.一 進件腔座3、一出件腔座6、— 轉運腔座2、一第一錢鍍單元4、一第二濺鍍單元5 一動力輸,7。在本實施例中,該鏟膜裝置主要是用 =鍛具餘電磁讀功效㈣膜,另>卜 ^ 非導電材質,例如:朔膦赤成t 疋 塑膠或破璃。定義一個由上游指向下 、的產線方向8(以圖2所示的方向為基準),在圖2中, 側為上游處’右側為下游處。另外要說明的是,以下即 將私述的各腔座具有—般熟知的真空腔室,因&,可反覆 進行抽氣或充氣的⑽並均安I有減幫浦,及可連通或 为隔各腔室以保持氣密性的閥門等元件,然而,前述可藉 乂達到冋真空度或低真空度的㈣非關本新型之技術特 徵,因此,不進行詳述。 所述進件腔座3包括一可提供該基板1進入的進料端 31 ’以及一個與該進料端31間隔的起始端32,該進件腔 座3内部的麼力可於常壓U大氣墨,Utm)與低真空間變 化。 所述轉運腔座2併接於進件腔座3的起始端32,且其 内的壓力可在低真空與高真空間變化,在本實施例中,該 轉運腔座2包括—個位在該產線方向8上的連續輸出端 21以及兩個位在產線方向8兩相反側的轉運輸出端22; 該第-滅鍍單A 4包括兩個分別併接於轉運腔纟2的轉運 輸出端22的第—濺鑛腔座4卜所述第-㈣腔座41是用 來濺鍍第-層導電薄膜或介面層材料,其材料是例如: 銅、或鈦’因此需恆保持在高真空狀態下以維護製程的潔 淨又與穩疋ft。該第—減鑛單元5包括—併接於轉運腔座 2的連續輪出端21的第二濺鍍腔座51,及一鄰併第二濺 鍍腔座51的第二濺鍍腔座52。所述第二濺鍍腔座η亦維 持在向真空下並用來濺鍍第二層導電薄膜,其材料例如: 銀。另外,該第三濺鍍腔座52是用以濺鍍第三層薄膜, 其材料主要提供防鏽的功效並是例如:鎳、或不鏽鋼 (SUS 304)。該出件腔座6併接於第三濺鍍腔座並與該 進件腔座3相間隔地位在該產線方向8的相反㈣。在本實 施例中,進件腔座3、轉運腔座2、第二、三濺鍍腔座51、 52’及出件腔座6是沿著產線方向8依序鄰併成一直列狀。 所述動力輸送單元7包括一設置在該轉運腔座2内的 旋轉輥輪件71,及數組分別設置在進件腔座3、第一、二、 三濺鑛腔座4卜51、52,以及出件腔座6中的輸送報輪件 72。該旋轉輥輪件71具有一基座711、—安裝於該基座7ιι 上並用以讓載具U置放或移動的輥輪組712,以及一連接 該基座711並提供其旋轉動力的步進馬達713。所述步進 M396826 馬達713可經由接收控制系統(圖未示)的指令而提供驅動 動力,使該基座7U繞一軸桿714依預設的旋轉角度作水 平式轉動,如此,該旋轉輥輪件71可將載具丨丨轉向並輸 送進入其兩側的第^難座41内。所述旋轉輥輪件71 的輥輪組712及輸送輥輪件72可藉由滾動以驅動載具u 往產線方向8前進,因此均包含可連到前述功效的相關元 件,例如·滾輪、輪軸、皮帶,或馬達等等。然而前述元 件常見於相關用於驅動物件的領域中,因此,不另行詳述。 濺鍍工作進行時,基板丨放置在载具丨丨上,並連同該 載具11片接著一片傳送進入進件腔座3内。首先,第一 片基板i進人進件腔座3前,進件腔座3需先充氣至與外 界環境相同的常壓狀態才會開啟,並讓第一片基板1連同 載具11放置於進件腔座3内的輸送輥輪件72而被帶動往 產線方向8前進。接著’進件腔座3中需進行抽氣直到内 部氣壓與轉運腔座2内相等後,兩者才可連通,並使該載 具11被輸送輥輪件72驅動向前,而被該轉運腔座2的旋 轉輥輪件71所承接。 接著,該轉運腔座2抽氣至與其兩側的第一濺鍍腔座 41相同的咼真空狀態後,該旋轉輥輪件7丨會依控制而繞 該軸桿7丨4旋轉,使載具丨丨轉向並被輸送進入其中一個第 一濺鍍腔座41内開始第—層薄膜濺鍍。此時,第二片基 板1亦遵循前述第一片基板丨的方式依序由進件腔座 轉運腔座2’並進入另一側的第一濺鍍腔座41内進行第一 層薄膜的濺鍍。 8 M396826 ,:於任一第一濺鍍腔座41完成第一層薄膜的濺鍍 後广系統判斷第二濺鍍腔* 5!已於預備承接狀態,所 述旋轉輥輪件71再轉向並承接由第—濺鍍腔座41的輸送 輥輪件72驅動回來的載具u,並傳送進人右側的第二、Therefore, the cluster continuous coating device of the present invention is used for conveying a substrate along a line direction, and forming a plurality of coatings on the substrate, the coating device comprising an inlet cavity, an ejection cavity, and a a transfer chamber, a sputtering unit, a second sputtering unit, and a power transmission unit. The inlet chamber includes a feed end for the substrate to enter, and a starting end spaced from the feed end; the outlet chamber is spaced from the inlet chamber on the opposite side of the line direction And having a terminating end, and a discharge end, the transfer chamber seat is at a starting end of the inlet cavity and includes a continuous output end, and at least two transfer outputs; the first sputtering unit includes a production Having two first sputter chambers respectively connected to one of the transfer chambers of the transfer chamber; the second sputter unit is connected to the continuous output end of the transfer chamber and the termination of the outlet chamber The power wheeling unit is configured to sequentially transport the substrate between the inlet cavity, the transfer cavity, the first sputtering unit, the second unit, and the outlet chamber. The utility model has the advantages that: the power transmission unit can transmit at least one or more substrates from the transfer chamber into the first sputtering unit and simultaneously perform the maintenance, so that the substrate can be reduced in time to increase the overall production capacity. The effect. [Embodiment] The features and effects are clearly and clearly presented in relation to the two preferred embodiments of the present invention and other technical contents 5:> Before the present invention is described in detail, similar elements are denoted by the same reference numerals. Du Fu refers to FIG. 2 3' The preferred embodiment of the clustered continuous mineral film device of the present invention can form a three-layer film on the substrate 1 in addition to the L-dimensional recognition, and can continue to transport the next piece. The substrate 丨 is transported by ^ (4) / t continued secret film, and each time the smash is transported by a plant can carry individual substrates 1 of summer 11. The coating device comprises: an inlet cavity 3, an outlet cavity 6, a transfer chamber 2, a first money plating unit 4, a second sputtering unit 5, and a power transmission, 7. In this embodiment, the shovel device is mainly used for = forging electromagnetic readout function (four) film, and other > non-conductive material, for example: bismuth phosphine red into t 疋 plastic or broken glass. Define a production line direction 8 from the upstream to the bottom (based on the direction shown in Figure 2). In Figure 2, the side is upstream and the right side is downstream. In addition, it should be noted that each of the chambers to be described below has a well-known vacuum chamber, which can be repeatedly pumped or inflated (10) and can be connected to the pump, and can be connected or An element such as a valve that maintains airtightness is provided in each chamber. However, the above-mentioned (four) non-critical new technical features can be achieved by vacuum or low vacuum, and therefore will not be described in detail. The inlet chamber 3 includes a feeding end 31' for providing entry of the substrate 1, and a starting end 32 spaced from the feeding end 31. The force inside the inlet chamber 3 can be at normal pressure U. Atmospheric ink, Utm) varies from low vacuum. The transfer chamber 2 is connected to the starting end 32 of the inlet chamber 3, and the pressure therein can be varied between a low vacuum and a high vacuum. In the present embodiment, the transport chamber 2 includes one position. a continuous output end 21 in the line direction 8 and two transfer output ends 22 on opposite sides of the line direction 8; the first-de-plating unit A 4 includes two transports respectively connected to the transfer chamber 2 The first - (four) cavity 41 of the output end 22 is used to sputter the first layer of conductive film or interface layer material, such as: copper, or titanium 'thus In the high vacuum state, the maintenance process is clean and stable. The first-mining unit 5 includes a second sputter chamber 51 connected to the continuous wheel end 21 of the transfer chamber 2, and a second sputter chamber 52 of the adjacent and second sputter chamber 51. . The second sputtering chamber seat η is also maintained under vacuum and used to sputter a second layer of conductive film, such as silver. In addition, the third sputtering chamber 52 is used to sputter a third film, the material of which mainly provides rust prevention and is, for example, nickel or stainless steel (SUS 304). The ejection chamber 6 is connected to the third sputtering chamber and spaced apart from the inlet chamber 3 in the opposite direction (4) of the line direction 8. In the present embodiment, the inlet chamber 3, the transfer chamber holder 2, the second and third sputtering chambers 51, 52' and the outlet chamber 6 are sequentially adjacent to each other along the line direction 8 and are aligned. . The power transmission unit 7 includes a rotating roller member 71 disposed in the transfer chamber base 2, and an array is disposed in the inlet cavity 3, the first, second, and third splashing chambers 4, 51, 52, respectively. And a delivery wheel member 72 in the outlet chamber 6. The rotating roller member 71 has a base 711, a roller set 712 mounted on the base 7 and used for placing or moving the carrier U, and a step of connecting the base 711 and providing its rotational power. Into the motor 713. The stepping M396826 motor 713 can provide driving power via an instruction of a receiving control system (not shown) to rotate the base 7U horizontally about a shaft 714 according to a predetermined rotation angle. Thus, the rotating roller The member 71 can turn and transport the carrier 丨丨 into the susceptor 41 on both sides thereof. The roller set 712 and the conveying roller member 72 of the rotating roller member 71 can be driven to drive the carrier u to the production line direction 8 by rolling, and thus each includes relevant components that can be connected to the aforementioned functions, such as a roller, Axles, belts, or motors, etc. However, the aforementioned components are commonly used in the field of related driving objects, and therefore, will not be described in detail. While the sputtering operation is in progress, the substrate cassette is placed on the carrier cassette and transported into the inlet housing 3 along with the carrier 11 piece. First, before the first substrate i enters the inlet cavity 3, the inlet cavity 3 is first inflated to the same atmospheric pressure state as the external environment, and the first substrate 1 is placed together with the carrier 11 The conveying roller member 72 in the inlet chamber 3 is driven to advance in the line direction 8. Then, in the inlet chamber 3, pumping is required until the internal air pressure is equal to the inside of the transfer chamber 2, so that the two can be connected, and the carrier 11 is driven forward by the conveying roller member 72, and is transported by the transporting roller member 72. The rotating roller member 71 of the chamber 2 is received. Then, after the transfer chamber 2 is evacuated to the same 咼 vacuum state as the first sputter chambers 41 on both sides thereof, the rotating roller member 7 turns around the shaft 7丨4 according to the control, so that The first layer of film sputtering is initiated by turning and being conveyed into one of the first sputtering chambers 41. At this time, the second substrate 1 also follows the first substrate 丨 in order from the inlet cavity transfer chamber 2 ′ and enters the other side of the first sputtering chamber 41 to perform the first film. Sputtering. 8 M396826, after the sputtering of the first layer of the film is completed by any of the first sputtering chambers 41, the second sputtering chamber*5 is judged to be in the preliminary receiving state, and the rotating roller member 71 is turned again. Receiving the carrier u driven back by the conveying roller member 72 of the first sputtering chamber seat 41, and transmitting the second to the right side of the person

7濺鍍腔座51、52内、依序完成第二、三層薄膜的濺鍍。 最後第#基板1連同載具11再由該出件腔座6内的輸 送輥輪件72驅動送出,如此,便完成多層鐘膜的工作。 而前述之第二片基板1亦依循第-片基板1的方式接續進 仃鑛膜與輸送的步驟。因此,即可不斷地傳送新的基板! 來達到連續式鐘膜工作。7 Sputtering of the second and third films is performed in the sputter chambers 51 and 52 in sequence. Finally, the # substrate 1 together with the carrier 11 is driven and sent by the transport roller member 72 in the outlet chamber 6, thus completing the operation of the multilayer diaphragm. The second substrate 1 is also subjected to the step of feeding the film and transporting in accordance with the first substrate 1. Therefore, new substrates can be continuously transferred! To achieve continuous bell film work.

^參閱圖4,本新型的第二較佳實施例與所述第一較佳 實施例大致相同’所不同處在於:該轉運腔座2從俯視的 角度為概呈八面形的態樣,並包括四個位在斜對角方向的 轉運輸出端22,而該第一濺鍍單元4包括四個相對應地分 別併接於所述轉運輸出端22的第一濺鍍腔座41。所述旋 轉輥輪件71亦可依設定作預設旋轉角度的水平轉動,並 將載具11依序傳送進入各個第一濺鍍腔座41内,如此, 可同時濺鍍第一層薄膜的腔座數目便增加,而更可提升鏟 獏的產能。 综上所述,利用位於轉運腔座2内的旋轉輥輪件71, 可傳送至少一片以上的基板1由轉運腔座2進入位在其周 側的第一濺鍍腔座41内同時進行濺鍍工作,如此,可達 至J減少下一片基板於產線方向8的下游處等待的時間,並 優化整體產能的運作效率。再者,將腔座由直列狀的排列 9 M396826 方式改為朝產線方向8兩側擴展的群集狀配置方式,也讓 業者在廠房的空間運作上有更多的彈性。 准以上所述者’僅為本新型之較佳實施例而已,當不 能以此限定本新型實施之範圍,即大凡依本新型申請專利 範圍及新型說明内容所作之簡單的等效變化與修飾,皆仍 屬本新型專利涵蓋之範園内。 【圖式簡單說明】 圖1是一種以往連續式鍍膜裝置的配置示意圖,· 圖2疋-俯視示意圖,顯示本新型的群集式連續錢膜 裝置的第一較佳實施例; 圖3是圖2的一局部立體示意圖,主要顯示一載具於 一旋轉輥輪件上輸送的態樣;及 圖4是類似圖2的示意圖,顯示本新型的群集式連續 鍍膦裝置的第二較佳實施例。 、 10 M396826Referring to FIG. 4, the second preferred embodiment of the present invention is substantially the same as the first preferred embodiment. The difference is that the transport chamber 2 has an octagonal shape from a top view. And including four transmissive output ends 22 in an oblique diagonal direction, and the first sputtering unit 4 includes four first sputter chambers 41 correspondingly respectively connected to the transfer output end 22. The rotating roller member 71 can also be rotated horizontally according to a preset rotation angle, and the carrier 11 is sequentially conveyed into each of the first sputtering chamber seats 41, so that the first layer of the film can be simultaneously sputtered. The number of chambers is increased, and the capacity of the shovel can be increased. In summary, with the rotating roller member 71 located in the transfer chamber base 2, at least one or more substrates 1 can be transferred from the transfer chamber 2 into the first sputtering chamber seat 41 on the circumferential side thereof while splashing. Plating work, so that J can reduce the waiting time of the next substrate in the downstream direction of the production line 8, and optimize the operational efficiency of the overall production capacity. Furthermore, the arrangement of the chambers from the in-line arrangement 9 M396826 to the cluster-like configuration that extends to the sides of the production line 8 also gives the operator more flexibility in the space operation of the plant. The above-mentioned ones are only the preferred embodiments of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent changes and modifications made by the present invention in accordance with the scope of the novel application and the novel description, They are still within the scope of this new patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the arrangement of a conventional continuous coating apparatus, and FIG. 2 is a top plan view showing a first preferred embodiment of the novel continuous type continuous film apparatus of the present invention; FIG. 3 is FIG. a partial perspective view showing a carrier on a rotating roller member; and FIG. 4 is a schematic view similar to FIG. 2 showing a second preferred embodiment of the novel clustered continuous phosphating device . , 10 M396826

【主要元件符號說明】 1…… …··基板 52··... •…第三濺鍍腔座 11…. ••…載具 6…… •…出件腔座 2…… ••…轉運腔座 61 ··..· •…終止端 21·.... •…連續輸出端 62···.. •…出料端 22···.. •…轉運輸出端 7…… •…動力輸送單元 3…… •…進件腔座 71 "… …·旋轉輥輪件 31·..· …·進料端 711… …·基座 32...·· -----起始 712… 親輪組 4…… •…第一濺鍍單元 713… •…馬達 41 •…第一濺鍍腔座 714… •…軸桿 5…… •…第二濺鍍單元 72…… …·輸送親輪件 51..... •…第二濺鍍腔座 8 ....... •…產線方向[Description of main component symbols] 1...... ...··························································· Transfer chamber seat 61 ······...Terminal end 21·....•...Continuous output end 62···..•...Outlet end 22···........Transport output 7... ...power conveying unit 3... •...inlet housing 71 "...·rotating roller member 31······feeding end 711...··Base 32...·· ----- Start 712... Pro-wheel set 4... •...first sputter unit 713... •...motor 41 •...first sputter chamber 714...•...shaft 5...•...second sputter unit 72... ...·Transporting the wheel member 51..... •...Second splash chamber 8 ....... •...Production direction

1111

Claims (1)

M396826 六、申請專利範圍: i=群集式連續鍍膜裝置,用以輸送—基板沿著一產線方 向刖進,並在該基板上形成數層鍍膜,該鍍膜裝置包含: 進件腔座,包括一供該基板進入的進料端,以及一 個與該進料端間隔的起始端; 一出件腔座,與該進件腔座相間隔地位在該產線方向 的相反側,並具有一終止端,以及一出料端; 一轉運腔座,位在該進件腔座的起始端,並包括一個 連續輸出端,以及至少兩個轉運輸出端; 一第一濺鍍單元,包括至少兩個分別與該轉運腔座的 其中一個轉運輸出端連接的第一濺鍍腔座; 一第二濺鍍單元,連接於該轉運腔座的連續輸出端與 該出件腔座的終止端間;及 一動力輸送單元,用以將該基板依序於進件腔座、轉 運腔座、第一濺鍍單元、第二濺鍍單元及出件腔座間傳送。 2. 依據申請專利範圍第1項所述之群集式連續鑛膜裝置,還 包含至少一用以裝載該基板的載具,該載具被動力輸送單 元驅動並依序於進件腔座、轉運腔座、第一濺鍍單元、第 二濺鍍單元及出件腔座間傳送。 3. 依據申請專利範圍第2項所述之群集式連續鍍膜裝置,其 中,該動力輸送單元包括一組設置在該轉運腔座内的旋轉 輥輪件,該旋轉輥輪件具有一基座、一安裝於該基座上並 用以讓載具置放或移動的輥輪組,以及一連接該基座並提 供其旋轉動力的馬達。 12 M396826 4. 依據申凊專利範圍第1項所述之群集式連續鍍膜裝置,其 中,所述第一濺鍍單元包括二個第一濺鍍腔座,該等第一 藏鍍腔座刀別併接於轉運腔座的兩相反側的轉運輸出端。 5. 依據申响專利範圍第丨項所述之群集式連續鍍膜裝置,其 中,所述第二濺鍍單元包括一併接於轉運腔座的連續輸出 端的第二濺鍍腔座,以及一設置介於第二濺鍍腔座與出件 腔座間的第三濺鍍腔座,所述進件腔座、轉運腔座、第二、 三濺鍍腔座,及出件腔座彼此併接成一直列狀。 6. 依據申請專利範圍第4項所述之群集式連續鍍膜襞置,其 中,該等第一濺鍍腔座是用以濺鍍導電材料或介面層材 料,例如:銅、欽。 7·依據申請專利範圍第5項所述之群集式連續鍍膜裝置,其 中’該第二濺鍍腔座是用以濺鍍導電材料,例如.銀 該第三濺鍍腔座是用以濺鍍防鏽材料,例 而 •神、不錄鋼。 13M396826 VI. Patent application scope: i=Cluster continuous coating device for conveying-substrate to advance along a production line, and forming a plurality of coatings on the substrate, the coating device comprises: an inlet cavity, including a feed end for the substrate to enter, and an initial end spaced from the feed end; an outlet cavity spaced from the inlet cavity on the opposite side of the line direction and having a termination And a discharge end; a transfer chamber seat at the beginning end of the inlet chamber, and including a continuous output end, and at least two transfer outputs; a first sputtering unit, including at least two a first sputtering chamber coupled to one of the transfer outlets of the transfer chamber; a second sputtering unit coupled between the continuous output of the transfer chamber and the terminating end of the outlet chamber; A power transmission unit is configured to transport the substrate sequentially between the inlet cavity, the transfer cavity, the first sputtering unit, the second sputtering unit, and the ejection chamber. 2. The cluster-type continuous mineral film device according to claim 1, further comprising at least one carrier for loading the substrate, the carrier being driven by the power transmission unit and sequentially transporting the housing The chamber is transferred between the chamber, the first sputtering unit, the second sputtering unit, and the outlet chamber. 3. The cluster-type continuous coating apparatus according to claim 2, wherein the power transmission unit comprises a plurality of rotating roller members disposed in the transfer chamber seat, the rotating roller member having a base, A roller set mounted on the base for placing or moving the carrier, and a motor coupled to the base and providing rotational power thereto. The invention relates to the cluster continuous coating device according to claim 1, wherein the first sputtering unit comprises two first sputtering chambers, and the first first plating chambers And connected to the transport output ends on opposite sides of the transfer chamber. 5. The cluster continuous coating apparatus according to the above aspect of the invention, wherein the second sputtering unit comprises a second sputtering chamber coupled to the continuous output end of the transfer chamber, and a setting a third sputtering chamber seat between the second sputtering chamber and the outlet chamber, the inlet chamber, the transfer chamber, the second and third sputtering chambers, and the outlet chamber are connected to each other Always listed. 6. The cluster-type continuous coating device of claim 4, wherein the first sputtering chamber is for sputtering a conductive material or an interface layer material, such as copper or copper. 7. The cluster continuous coating apparatus according to claim 5, wherein the second sputtering chamber is for sputtering a conductive material, for example, silver, the third sputtering chamber is for sputtering Anti-rust materials, for example, God, do not record steel. 13
TW099217249U 2010-09-06 2010-09-06 Cluster type continuous film coating device TWM396826U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW099217249U TWM396826U (en) 2010-09-06 2010-09-06 Cluster type continuous film coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099217249U TWM396826U (en) 2010-09-06 2010-09-06 Cluster type continuous film coating device

Publications (1)

Publication Number Publication Date
TWM396826U true TWM396826U (en) 2011-01-21

Family

ID=45087689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099217249U TWM396826U (en) 2010-09-06 2010-09-06 Cluster type continuous film coating device

Country Status (1)

Country Link
TW (1) TWM396826U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI686341B (en) * 2018-04-24 2020-03-01 台達電子工業股份有限公司 Splicing conveyor and control method thereof
CN117467969A (en) * 2023-12-28 2024-01-30 湖南振添光学玻璃科技有限公司 ITO coating equipment for optical glass lens and use method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI686341B (en) * 2018-04-24 2020-03-01 台達電子工業股份有限公司 Splicing conveyor and control method thereof
CN117467969A (en) * 2023-12-28 2024-01-30 湖南振添光学玻璃科技有限公司 ITO coating equipment for optical glass lens and use method
CN117467969B (en) * 2023-12-28 2024-04-16 湖南振添光学玻璃科技有限公司 ITO coating equipment for optical glass lens and use method

Similar Documents

Publication Publication Date Title
TWI579952B (en) System for utilization improvement of process chambers and method of operating thereof
TW564478B (en) Apparatus and method for treating a substrate
JP6134815B2 (en) Apparatus using adjacent sputter cathode and operation method thereof
TW201033394A (en) Web substrate deposition system
TWM396826U (en) Cluster type continuous film coating device
WO2020034967A1 (en) Vacuum coating apparatus and method, and preparation method of film layer inside filter cavity
CN107810287A (en) The manufacture method of graphite radiating sheet material
WO2015172835A1 (en) Apparatus and method for coating a substrate by rotary target assemblies in two coating regions
CN201793729U (en) Cluster type continuous coating device
CN219435891U (en) Double-sided film plating device
TWI637431B (en) Backside metallization process
TW201239123A (en) Vacuum treatment apparatus
JPWO2011007580A1 (en) Substrate processing method
CN214458304U (en) Film coating equipment
KR20130060010A (en) Apparatus for depositing multi layer of thin film
JP2003060005A (en) Vacuum treatment apparatus
CN111676452A (en) Method for efficiently plating superhard film
JPH08232062A (en) Coating apparatus
KR101569768B1 (en) Atomic layer deposition apparatus and method thereof
CN215163072U (en) Deposition apparatus and deposition system
TW201118188A (en) Moving target device of vacuum sputtering equipment
CN210296331U (en) Grabbing device in chip course of working
JP4648936B2 (en) Gas barrier film manufacturing method and gas barrier film manufacturing apparatus
JP2009191356A (en) Sputtering apparatus and sputtering method
WO2011121632A1 (en) Conveyance mechanism, vacuum treatment apparatus using same, and method for preparing electronic device

Legal Events

Date Code Title Description
MM4K Annulment or lapse of a utility model due to non-payment of fees