KR20130060010A - Apparatus for depositing multi layer of thin film - Google Patents

Apparatus for depositing multi layer of thin film Download PDF

Info

Publication number
KR20130060010A
KR20130060010A KR1020110126282A KR20110126282A KR20130060010A KR 20130060010 A KR20130060010 A KR 20130060010A KR 1020110126282 A KR1020110126282 A KR 1020110126282A KR 20110126282 A KR20110126282 A KR 20110126282A KR 20130060010 A KR20130060010 A KR 20130060010A
Authority
KR
South Korea
Prior art keywords
chamber
process chamber
pump
oxide
unloading
Prior art date
Application number
KR1020110126282A
Other languages
Korean (ko)
Inventor
정우석
Original Assignee
한국전자통신연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국전자통신연구원 filed Critical 한국전자통신연구원
Priority to KR1020110126282A priority Critical patent/KR20130060010A/en
Publication of KR20130060010A publication Critical patent/KR20130060010A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A multilayer thin film deposition device is provided to improve or maximize productivity as process chambers can perform a continuous deposition process of a first oxide, metal, and a second oxide. CONSTITUTION: A multilayer thin film deposition device comprises a plurality of process chambers(300), vacuum pumps(400), and an oxygen supply units(501,502). The plurality of process chambers include a first process chamber, a second process chamber, and a third process chamber which are connected in a row between a loading chamber and a unloading chamber for performing a continuous deposition process with respect to work pieces of a first oxide, metal, and a second oxide. The vacuum pumps include a first pump, a second pump, and a third pump. The first pump is commonly connected to the loading chamber and the first process chamber for providing vacuum pressure lower than normal pressure from the loading chamber to the unloading chamber. The second pump is independently connected to the second process chamber. The third pump is commonly connected to the unloading chamber and the third processing chamber. The oxygen supply units supply oxygen to the first and third process chambers.

Description

Apparatus for depositing multi layer of thin film

The present invention relates to a thin film deposition apparatus, and more particularly, to a multilayer thin film deposition apparatus for depositing a plurality of thin films on a film or a flat plate.

The development of electronic communication technology is increasing the utilization of high performance thin film. In addition, research and development for producing high-performance thin film in large quantities is being actively made. For example, the deposition apparatus may include a sputter that uses a metal material as a target to form a high performance thin film. High performance metal thin films can be obtained in large quantities on a film by a roll-to-roll method. The high performance metal thin film may be formed on a flat plate carried by the conveyor system. Oxides can be formed mostly through chemical vapor deposition or heat treatment. For some oxides it can be formed by sputtering. Therefore, there is a need for a deposition apparatus for forming a multilayer thin film having a laminated structure of high performance oxide and metal.

One object of the present invention is to provide a multi-layer thin film deposition apparatus for performing a deposition process of the first oxide / metal film / first oxide.

Another object of the present invention is to provide a multilayer thin film deposition apparatus capable of increasing or maximizing productivity.

In order to achieve the above technical problem, the multilayer thin film deposition apparatus of the present invention, a loading chamber for loading a substrate; An unloading chamber for unloading the substrate; At least one sputter gun for inducing a plasma for depositing a workpiece on the substrate, and inductively coupled plasma tubes disposed between the substrate and the sputter gun, the first oxide / metal / A plurality of processes including a first process chamber, a second process chamber, and a third process chamber connected in a continuous line between the loading chamber and the unloading chamber to perform a continuous deposition process on the workpiece of the second oxide Chambers; A first pump commonly connected to the loading chamber and the first process chamber to provide a vacuum pressure lower than normal from the loading chamber to the unloading chamber, a second pump solely connected to the second process chamber, and Vacuum pumps comprising a third pump commonly connected to an unloading chamber and the third process chamber; And gas supplies supplying oxygen or the like to the first process chamber and the third process chamber.

As described above, according to the exemplary configuration of the present invention, process chambers including first to third process chambers may be disposed between the loading chamber and the unloading chamber. Oxygen may be supplied to the first process chamber and the third process chamber by oxygen supplies. The first process chamber may form a first oxide on the substrate. The second process chamber may deposit metal on the first oxide. The third process chamber may form a second oxide. Process chambers may perform a continuous deposition process of a first oxide / metal / second oxide. Therefore, the multilayer thin film deposition apparatus according to the embodiment of the present invention may increase or maximize productivity.

1 is a view schematically showing a multilayer thin film deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view illustrating the loading chamber of FIG. 1.
3 to 5 are cross-sectional views illustrating the process chambers of FIG. 1.
6 is a cross-sectional view illustrating the unloading chamber of FIG. 1.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order.

1 is a view schematically showing a multilayer thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the multilayer thin film deposition apparatus of the present invention may include a plurality of process chambers 300 connected in a line between the loading chamber 100 and the unloading chamber 200. The loading chamber 100 and the unloading chamber 200 are buffer chambers that buffer the vacuum of the process chambers 300. The process chambers 300 may include a first process chamber 301, a second process chamber 302, and a third process chamber 303. For example, the first process chamber 301 and the third process chamber 303 may provide an oxide deposition environment. The second process chamber 302 may provide a deposition environment of metal. The vacuum pumps 400 may provide a vacuum pressure to the loading chamber 100, the unloading chamber 200, and the process chambers 300. The vacuum pumps 400 may include a first pump 401, a second pump 402, and a third pump 403. Process chambers 300 and vacuum pumps 400 may be connected in pairs, respectively. The second process chamber 302 may have a higher vacuum pressure than the first process chamber 301 and the third process chamber 303 adjacent to the loading chamber 100 and the unloading chamber 200, respectively. The first and second oxygen supplies 501 and 502 may supply oxygen to the first process chamber 301 and the third process chamber 303. The process chambers 300 may continuously perform a deposition process of a deposit, such as an oxide or a metal.

Thus, the thin film deposition apparatus according to the embodiment of the present invention can thereby increase or maximize productivity.

2 is a cross-sectional view illustrating the loading chamber of FIG. 1.

1 and 2, the loading chamber 100 includes a first cassette elevator 12 that horizontally mounts and lowers the substrates 10 and a first heater that heats the substrates 10. 14). The first cassette elevator 12 wins the slots 11 supporting the substrates 10, the frames 13 fixing the slots 11 at regular intervals, and the frames 13. A lowering lifter (not shown) may be included. The first cassette elevators 12 may mount about 10 to about 100 substrates 10. The substrates 10 may be sequentially transferred from the loading chamber 100 to the process chambers 300 by a feeding system (not shown), such as a robot arm. The first heater 14 may heat the substrates 10 by about 100 degrees or more.

3 to 5 are cross-sectional views illustrating the process chambers of FIG. 1.

1 and 3, the first process chamber 301 may include a first inlet 318 for flowing in and out of the substrates 10 between the loading chamber 100 and the second process chamber 302, and a first inlet 318. It may have a exit 319. The first inlet 318 may be connected to the first entrance (16 of FIG. 2) of the loading chamber 100. At least one square valve 600 may be disposed between the loading chamber 100 and the first process chamber 301. The first process chamber 301 may deposit a first oxide on the substrates 10. The first process chamber 301 may be connected to the first pump 401 and the first oxygen supply unit 501. The first oxygen supply unit 501 may supply oxygen gas to the first process chamber 301. The first process chamber 301 may be filled with an inert gas such as argon (Ar). The first pump 401 may be commonly connected to the first process chamber 301 and the loading chamber 100. The first process chamber 301 and the loading chamber 100 may have a vacuum pressure in a low vacuum state of about 0.1 mTorr to about 100 mTorr by the pumping of the first pump 401.

The first process chamber 301 may include transfer rollers 20, sputter guns 22, inductively coupled plasma tubes 26, shutters 28, and a second heater 34. have. The transfer rollers 20 may support and move the substrates 10 horizontally in the first process chamber 301. For example, the transfer rollers 20 may consist of about four in the first process chamber 301. The distance between the transfer rollers 20 may be shorter than the length of the substrates 10. The plurality of sputter guns 22 may induce the first plasma 30 to sputter deposition particles from the targets 24.

The first plasma 30 may be bound between the plurality of inductively coupled plasma tubes 26. Inductively coupled plasma tubes 26 may be disposed between the substrates 10 and the sputter guns 52. The plurality of inductively coupled plasma tubes 26 may induce a second plasma 32 extended than the first plasma 30. The second plasma 32 may uniformly mix the deposited particles sputtered from the targets 24. The second plasma 32 may increase the ionization rate of the inert gas charged from the first plasma 30.

Shutters 28 may be disposed between inductively coupled plasma tubes 26 and transfer rollers 20. The shutters 28 may protect the transfer rollers 20 from the second plasma 32. The second heater 34 may heat the substrates 10 to a predetermined temperature or more. The third heater () may stabilize the first oxide deposited on the surfaces of the substrates 10. The targets 24 may include a thin film source material formed on the substrates 10. For example, the targets 24 may include metals such as tungsten, aluminum, titanium, cobalt, nickel, molybdenum, and a ceramic of silicon oxide. The metals may be formed as a first oxide on the substrate 10 after being combined with oxygen in the first process chamber 301.

Accordingly, the first process chamber 301 may deposit the first oxide on the substrate 10 by oxygen provided from the first oxygen supply unit 501.

1 and 4, the second process chamber 302 may include a second inlet 328 for flowing in and out of the substrates 10 between the first process chamber 301 and the third process chamber 303; It may have a second exit port 329. The second inlet 328 may be connected to the first outlet 319 of FIG. 3 of the first process chamber 301. The second process chamber 302 may be connected to the second pump 402. The second process chamber 302 may have a higher vacuum pressure than the first process chamber 301. For example, the second process chamber 302 may have a vacuum pressure of about 0.01 mTorr to about 10 mTorr low vacuum state by pumping the second pump 402. This is because the second process chamber 302 does not receive oxygen from the first and second oxygen supplies 501 and 502. The second process chamber 302 may be filled with an inert gas such as argon (Ar).

Similarly, the second process chamber 302 includes transfer rollers 20, sputter guns 22, inductively coupled plasma tubes 26, shutters 28, and a second heater 34. can do. The target may comprise a metal. For example, the targets 24 may include metals such as tungsten, aluminum, titanium, cobalt, nickel, molybdenum.

Thus, the second process chamber 302 can form a metal on the first oxide.

1 and 5, the third process chamber 303 may include a third inlet 338 for flowing in and out of the substrates 10 between the second process chamber 302 and the unloading chamber 200. It may have three exit holes 339. The third inlet 338 may be connected to the second outlet (329 of FIG. 4) of the second process chamber 302. The third process chamber 303 may be connected to the third pump 403. The third process chamber 303 may be connected to the second oxygen supply 502. The second oxygen supply unit 502 may supply oxygen into the third process chamber 303. The third process chamber 303 may be filled with an inert gas such as argon (Ar). The third process chamber 303 may have a lower vacuum pressure than the second process chamber 302. The third process chamber 303 may have a low vacuum state vacuum pressure of about 0.1 mTorr to about 100 mTorr by the pumping system. It may be filled with an inert gas such as argon (Ar). The third process chamber 303 may form a second oxide.

Therefore, in the multilayer thin film deposition apparatus according to the exemplary embodiment of the present invention, the first oxide / metal / second oxide may be sequentially formed on the substrate 10.

3 to 5 are cross-sectional views illustrating the process chambers of FIG. 1. 6 is a cross-sectional view illustrating the unloading chamber of FIG. 1.

1 and 6, the unloading chamber 200 includes a first cassette elevator 12 that horizontally mounts and lowers the substrates 10, and a first heater that heats the substrates 10. (14). The first cassette elevator 12 wins the slots 11 supporting the substrates 10, the frames 13 fixing the slots 11 at regular intervals, and the frames 13. A lowering lifter (not shown) may be included. The first cassette elevator 12 may mount about 10 to about 100 substrates 10. The substrates 10 may be discharged through the second entrance 15 between the third process chamber 303 and the unloading chamber 200 by a feeding system (not shown), such as a robot arm. The second entrance 15 may be connected to the third exit port 339 of the third process chamber 303. The substrates 10 may be sequentially transferred along the process chambers 300 from the loading chamber 100 to the unloading chamber 200. The first heater 14 may heat the substrates 10 by about 100 degrees or more.

As a result, the multilayer thin film deposition apparatus according to embodiments of the present invention may increase or maximize productivity.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

100: loading chamber 200: unloading chamber
300: process chambers 400: vacuum pumps
501, 502: first and second oxygen supplies
600: square valve

Claims (1)

A loading chamber for loading the substrate;
An unloading chamber for unloading the substrate;
At least one sputter gun for inducing a plasma for depositing a workpiece on the substrate, and inductively coupled plasma tubes disposed between the substrate and the sputter gun, the first oxide / metal / A plurality of processes including a first process chamber, a second process chamber, and a third process chamber connected in a line between the loading chamber and the unloading chamber to perform a continuous deposition process on the workpiece of the second oxide Chambers;
A first pump commonly connected to the loading chamber and the first process chamber to provide a vacuum pressure lower than normal from the loading chamber to the unloading chamber, a second pump solely connected to the second process chamber, and Vacuum pumps comprising a third pump commonly connected to an unloading chamber and the third process chamber; And
And a plurality of oxygen supply parts supplying oxygen to the first process chamber and the third process chamber.
KR1020110126282A 2011-11-29 2011-11-29 Apparatus for depositing multi layer of thin film KR20130060010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110126282A KR20130060010A (en) 2011-11-29 2011-11-29 Apparatus for depositing multi layer of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110126282A KR20130060010A (en) 2011-11-29 2011-11-29 Apparatus for depositing multi layer of thin film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160068303A Division KR20160072076A (en) 2016-06-01 2016-06-01 method for depositing multi-thin film of deposition apparatus

Publications (1)

Publication Number Publication Date
KR20130060010A true KR20130060010A (en) 2013-06-07

Family

ID=48858723

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110126282A KR20130060010A (en) 2011-11-29 2011-11-29 Apparatus for depositing multi layer of thin film

Country Status (1)

Country Link
KR (1) KR20130060010A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150133076A (en) 2014-05-19 2015-11-27 주식회사 선익시스템 Thin film deposition in-line system
CN107710391A (en) * 2015-07-29 2018-02-16 东京毅力科创株式会社 The method being etched to multilayer film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150133076A (en) 2014-05-19 2015-11-27 주식회사 선익시스템 Thin film deposition in-line system
CN107710391A (en) * 2015-07-29 2018-02-16 东京毅力科创株式会社 The method being etched to multilayer film

Similar Documents

Publication Publication Date Title
TWI781932B (en) Systems and methods for improved semiconductor etching and component protection
KR102095717B1 (en) Coating apparatus and method
JP6080027B2 (en) Method and system for maintaining an edge exclusion shield
JP5911958B2 (en) Mask structure, apparatus and method for depositing a layer on a rectangular substrate
JP6134815B2 (en) Apparatus using adjacent sputter cathode and operation method thereof
US9115425B2 (en) Thin film depositing apparatus
US20190338413A1 (en) In-Line Coater for Vacuum Deposition of Thin Film Coatings (Variants)
JP2009280835A (en) Operating method of vacuum apparatus
US11512386B2 (en) Film formation device for cutting tool provided with coating film, and film formation method for cutting tool provided with coating film
TW201241956A (en) Deposition equipment
KR20130060010A (en) Apparatus for depositing multi layer of thin film
TW201608044A (en) Sputter deposition apparatus and method for coating a substrate by rotary target assemblies in two coating regions and use thereof
KR101321331B1 (en) The system for depositing the thin layer
US20140127425A1 (en) Plasma deposition apparatus and plasma deposition method
KR100707960B1 (en) An Inline sputter apparatus for manufacturing a multi-layered ITO for transparent electrode
KR101512132B1 (en) apparatus for depositing thin film
KR20160072076A (en) method for depositing multi-thin film of deposition apparatus
KR20140140462A (en) Atomic Layer Deposition Apparatus
TWI631230B (en) Inter-back type deposition system with reduced footprint
TWM509425U (en) Continuous vacuum coating equipment with lifting load
KR20100071658A (en) Apparatus for depositing thin film
KR102342029B1 (en) A automatic system for depositing the atomic layer
KR20120040082A (en) Apparatus for depositing thin film
WO2019121289A1 (en) Surface treatment chamber transport system
JP2024087246A (en) Magnetron sputtering equipment

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
E902 Notification of reason for refusal
E601 Decision to refuse application
E601 Decision to refuse application
E801 Decision on dismissal of amendment
A107 Divisional application of patent