Classifications

• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
  • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
  • A61B8/12—Diagnosis using ultrasonic, sonic or infrasonic waves in body cavities or body tracts, e.g. by using catheters
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
  • G01N29/22—Details, e.g. general constructional or apparatus details
  • G01N29/24—Probes
  • G01N29/2406—Electrostatic or capacitive probes, e.g. electret or cMUT-probes
• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
  • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
  • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
  • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
  • A61B8/4494—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer characterised by the arrangement of the transducer elements
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
  • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
  • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
  • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
  • B06B1/0207—Driving circuits
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
  • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
  • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
  • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
  • B06B1/0292—Electrostatic transducers, e.g. electret-type
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
  • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
  • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
  • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
  • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
  • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
  • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
  • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
  • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
  • H10N30/2047—Membrane type
• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
  • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
  • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
  • A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
  • A61B8/4455—Features of the external shape of the probe, e.g. ergonomic aspects
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
  • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
  • B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
  • B06B2201/20—Application to multi-element transducer

Definitions

• the present application relates to micromachined ultrasonic transducers.
• Some micromachined ultrasonic transducers include a flexible membrane suspended above a substrate.
• a cavity is located between part of the substrate and the membrane, such that the combination of the substrate, cavity, and membrane form a variable capacitor. If actuated, the membrane may generate an ultrasound signal. In response to receiving an ultrasound signal, the membrane may vibrate, resulting in an output electrical signal.
• FIG. 1 is a perspective view of an array of micromachined ultrasonic transducers comprising pressure ports for access to cavities of the micromachined ultrasonic transducer.
• FIG. 2 is a schematic top view of the cavity layer of the structure of FIG. 1.
• FIG. 3 illustrates a layer of the device of FIG. 1 including cavities and channels.
• FIG. 4 illustrates an alternative to FIG. 1 having an array of ultrasonic transducers with respective pressure ports.
• FIG. 5 is a schematic top view of the cavity layer of the structure of FIG. 4.
• FIG. 6 illustrates the cavity layer of FIG. 4 including cavities and portions of the pressure ports.
• FIG. 7 illustrates an alternative array of ultrasonic transducers and pressure ports comprising two pressure ports per ultrasonic transducer.
• FIG. 8 illustrates an alternative array of ultrasonic transducers and pressure ports comprising two pressure ports per ultrasonic transducer.
• FIG. 9 illustrates an alternative array of ultrasonic transducers and pressure ports in which the pressure ports are shared among the ultrasonic transducers.
• FIG. 10 is a cross-sectional view of a pressure port of a type which may be used in the device of FIG. 9.
• FIG. 11 is a cross-sectional view of a non-limiting example of a micromachined ultrasonic transducer having a pressure port.
• FIG. 12 is a flowchart of a fabrication process for forming an ultrasonic transducer having a pressure port, according to some embodiments.
• a micromachined ultrasonic transducer comprising a pressure port.
• the MUT may include a sealed cavity, for example sealed on a top and bottom side by a membrane and a substrate, respectively.
• the pressure port may represent an access hole to the sealed cavity.
• the pressure port may function to control the pressure within the sealed cavity during manufacture of the MUT. Once the pressure of the cavity, or cavities, is set as desired, the pressure port may be sealed.
• the inclusion of a pressure port for a MUT may provide various benefits.
• the pressure port may allow for control of the pressure of the sealed cavity of the MUT.
• Some ultrasound devices comprise large numbers of MUTs, such as hundreds, thousands, or hundreds of thousands of MUTs. Operation of such ultrasound devices may benefit in terms of accuracy and dynamic range (e.g., by minimizing damping) from having a substantially equal or uniform pressure across the area of the MUTs.
• providing pressure ports for individual MUTs or sub-groups of MUTs of the ultrasound device may facilitate achieving more uniform pressure across the sensing area.
• the pressure ports may allow for equalization of cavity pressure over a sensing area comprising multiple MUTs.
• the pressure ports may be used during manufacture, and sealed after the cavities are equalized in terms of pressure.
• each ultrasonic transducer may have one or more respective pressure ports.
• a pressure port may be shared by two or more ultrasonic transducers.
• an array of ultrasonic transducer may include respective pressure ports oriented at a same angle as each other relative to the array.
• an array of ultrasonic transducers may include respective pressure ports, in which two or more of the pressure ports are oriented at different angles relative to the array.
• the number of pressure ports provided for an array of ultrasonic transducers may be less than, equal to, or greater than the number of ultrasonic transducers. Further variations are possible.
• FIG. 1 is a non-limiting example, and is a perspective view of an array of micromachined ultrasonic transducers comprising pressure ports for access to cavities of the micromachined ultrasonic transducer.
• the ultrasound device 100 comprises an array of nine MUTs 102, formed by a membrane 104, insulating layer 106, and cavities 108.
• Pressure ports 110 are provided, and channels 112 interconnect the cavities 108.
• insulating layer 106 may be a part of a complementary metal-oxide- semiconductor (CMOS) wafer, and cavities 108 can be formed in insulating layer 106 of the CMOS wafer.
• CMOS complementary metal-oxide- semiconductor
• the pressure ports 110 may have any suitable location. In the illustrated non limiting example, they are positioned at the periphery of the array, and in this non-limiting example on two opposite side of the periphery of the array. When the pressure ports are disposed at the periphery of the array, as shown, control over the cavity pressure of the cavities internal to the array may still be achieved because of the presence of channels 112, which may be air channels. However, alternative configurations are possible. For example, a pressure port may be provided for each individual cavity as shown in other embodiments. Alternatively, fewer pressure ports may be provided than shown, with additional channels 112 provided to allow for control of the cavity pressure across the array.
• the pressure ports 110 are positioned on two opposite sides of the array. In this non-limiting example, two pressure ports are positioned on a line bisecting the ultrasonic transducers in a given row. However, alternative positioning of pressure ports is possible.
• the pressure ports may have any suitable dimensions and may be formed in any suitable manner. In some embodiments, the pressure ports are sufficiently small to not have a negative impact on the performance of the ultrasonic transducers. Also, the pressure ports may be sufficiently small to allow them to be sealed once the pressures of cavities 108 are set to a desired value.
• the pressure ports may have diameters between approximately 0.1 microns and 20 microns, including any value or range of values within that range.
• the pressure ports may be sealed in any suitable manner, such as with a metal material. For example, aluminum may be sputtered to seal the pressure ports.
• the pressure ports may be created and used during manufacture of the MUT(s).
• the sealed cavities may be formed using a wafer bonding technique.
• the wafer bonding technique may be inadequate for achieving uniform cavity pressure across a wafer or array of MUTs.
• the chemicals present for wafer bonding may unequally occupy or remain in certain cavities of an array of MUTs.
• the pressure ports may be opened.
• the pressures of the sealed cavities may then be equalized, or made substantially equal, through exposure of the wafer to a desired, controlled pressure.
• desired chemicals e.g., Argon
• desired chemicals e.g., Argon
• control of the pressure and/or chemical content of the sealed cavities of a plurality of MUTs may be improved through use of a pressure port.
• the pressure port may provide greater control over these parameters than the wafer bonding process used for forming the sealed cavities.
• FIG. 2 illustrates a top view of the cavity layer of the ultrasound device 100 of FIG. 1. As shown, nine cavities are included, interconnected by channels 112. Again, the channels 112 may be air channels, allowing pressure in the adjoining cavities to be set at a uniform level. The channels 112 may have any suitable dimensions for this purpose, such as being between 0.1 microns and 20 microns, including any value or range of values within that range.
• FIG. 2 illustrates circular cavities, but other shapes are possible, such as polygonal, square, or any other suitable shape.
• the positioning and number of pressure ports shown may also be selected for a particular application.
• FIG. 3 illustrates a perspective view of the cavity layer of the device of FIG. 1 including cavities and channels.
• the membrane layer of the ultrasound device 100 is omitted.
• the cavities 108, channels 112, and part of the pressure ports 110 may be formed, for example by etching.
• the membrane 104 may be formed to seal the cavities 108 by creating a membrane layer.
• a vertical part of the pressure ports 110 may then be etched through the membrane 104 to form the ultrasound device 100.
• an array of ultrasonic transducers comprises an array of cavities with respective pressure ports.
• FIG. 4 illustrates an example, representing an alternative to FIG. 1 and having an array of ultrasonic transducers with respective pressure ports.
• the ultrasound device 400 includes the cavities 108, membrane 104, and insulating layer 106.
• One pressure port is provided for each cavity 108 in this non limiting embodiment.
• the cavities are not interconnected by channels 112. Also, in this non-limiting example it is seen that the pressure ports are all oriented at a common angle relative to the cavities, and are not all disposed at a periphery of the cavity array.
• FIG. 5 is a schematic top view of the cavity layer of the structure of FIG. 4.
• the cavities 108 include pressure ports 110 which include both a portion in-plane with the cavities and a portion perpendicular to the cavities (represented by the circles at the end of the portion in-plane with the cavities).
• FIG. 6 illustrates the cavity layer of FIG. 4 including cavities 108 and pressure ports 110.
• the portion of the pressure ports in-plane with the cavities is illustrated.
• the portion of the pressure portions extending upward, perpendicular to the cavities 108 is not shown since that portion extends through the membrane 104, which is not part of FIG. 6.
• the cavities 108 and portions of the pressure ports 110 in-plane with the cavities 108 may be formed in any suitable manner.
• any suitable technique for etching the insulating layer 106 may be used to form the cavities 108 and in-plane portions of the pressure ports 110.
• the ultrasound device 400 of FIG. 4 may be formed from the structure of FIG. 6 by forming the membrane 104 and etching vertical portions of the pressure ports 110.
• FIGs. 1 and 4 illustrate two non-limiting examples.
• FIG. 7 illustrates a further alternative.
• two pressure ports are provided for each cavity. Providing more than one pressure port per cavity may make it easier to remove undesirable elements from the cavity, such as water or other elements. Having more than one port per cavity may also facilitate achieving a desired pressure for the cavity.
• the pressure ports are represented by the channels, or extensions, with the openings 702 at the end. It can be seen that the pressure ports 110 are oriented at an angle Q with respect to the elevation direction. That angle may be between 5 degrees and 40 degrees, or any other suitable number. Also shown in FIG.
• metal lines 704 and 706 are metal lines 704 and 706.
• Metal lines 704 run in the azimuth direction, while metal lines 706 run in the elevation direction.
• the metal lines 704 and 706 may represent conductive traces for providing signals to/from the ultrasonic transducers.
• the metal of the metal lines may seal the ends of the pressure ports. For example, sputtering aluminum to form the metal lines may seal the pressure ports.
• FIG. 8 illustrates an alternative array of ultrasonic transducers and pressure ports comprising two pressure ports per ultrasonic transducer.
• the illustrated ultrasound device 800 differs from that of FIG. 7 in that the pressure ports for neighboring cavities are oriented differently than each other. In this example, when the pressure ports for a given cavity are oriented along the azimuth direction, the pressure ports for its immediately neighboring cavities are oriented along the elevation direction, and vice versa.
• FIG. 9 illustrates an alternative array of ultrasonic transducers and pressure ports in which the pressure ports are shared among the ultrasonic transducers.
• the ultrasound device 900 includes cavities 108, metal lines 904 and 906, channels 110 and access holes 902.
• the pressure ports may represent a combination of channels 110 and access holes 902.
• the access holes may extend vertically, for example perpendicular to the cavities 108, as shown in FIG. 9 as openings 902.
• the channels 110 may interconnect neighboring cavities 108 as shown. In this example, the same number of pressure ports and cavities are provided and the pressure ports are accessible internal to the array as opposed to being disposed at a periphery of the array.
• FIG. 10 is a cross-sectional view 10 of a pressure port of a type which may be used in the device of FIG. 9.
• the pressure port includes a vertical portion represented by 902, having a width XI, and an in-plane portion, or channel, with a width X2.
• the value of XI may be selected so as to be sufficiently small to not negatively impact operation of the ultrasonic transducer, and also to be sufficiently small to allow easy filling.
• XI may assume any of the value described previously herein with respect to pressure port and access hole dimensions, such as being between 0.1 microns and 20 microns.
• the value of X2 may likewise assume any such value. In the illustrated example, XI is less than X2.
• membrane 104 may be formed of one or more layers with different material compositions.
• Membrane 104 may be formed from a silicon on insulator (SOI) wafer.
• the SOI wafer may comprise several layers, including but not limited to a buried oxide (BOX) layer l04a, a single crystalline layer l04b, and a thermal oxide layer l04c.
• the SOI wafer may further comprise a handling wafer, which is removed after wafer bonding by any suitable technique such as chemical-mechanical polishing (CMP).
• BOX layer l04a may be any suitable thickness, such as being between 0.5 and 2 microns thick or any other suitable value.
• Single crystalline layer l04b may be single crystalline Si or any suitable single crystalline material.
• Single crystalline layer l04b may also be any suitable thickness to enable operation of the MUTs, including being between 4 and 10 microns thick.
• Thermal oxide layer l04c may be any suitable thickness, such as being between 100 and 300 nm thick
• FIG. 11 is a cross-sectional view of a non-limiting example of a MUT 1100 having a cavity 108 and pressure port 110.
• the pressure port may be sealed, and thus the illustrated device may represent the state of the device after the cavity pressure has been set to a desired value. At that point, the pressure port may be sealed with seal 1102 to provide a substantially constant pressure within the sealed cavity as a function of time.
• cavities 108, pressure ports 110, and/or channels 112 are formed in insulating layer 106.
• Cavities 108, pressure ports 110, and/or channels 112 may be formed by any suitable etch process including reactive ion etching (RIE), deep reactive ion etching (DRIE), ion milling, plasma etching, or any other suitable method.
• Insulating layer 106 may be a part of a larger CMOS wafer such that the cavities are electrically coupled to other elements of the CMOS wafer.
• the insulating layer 106 with features may be wafer bonded to a membrane wafer, which may be an SOI wafer of the type discussed previously.
• the wafer bonding process may be a low temperature wafer bonding process.
• the wafer bonding process may also include a post-process annealing step. During annealing, gettering materials may be present to help control the pressure inside the cavities 108. For example, gettering materials might include Ti, TiN, SrO, and/or Zr-Al.
• the handling wafer of the membrane wafer may be ground off, allowing the membrane 104 above the cavities 108 to flex.
• the handling wafer may be ground off in any suitable way including chemical- mechanical polishing.
• openings such as openings 902 are formed to open pressure ports 110, allowing the pressure of the cavities 108 to equalize. Openings may be formed using any suitable etch process such as RIE and/or DRIE. In some embodiments, RIE is first used to etch through BOX layer l04a. Then, DRIE is used to etch single crystalline layer l04b, and RIE is again used to etch through thermal oxide layer l04c. Since the pressure ports 110 are opened under vacuum, any outgassed materials from the wafer bonding and/or annealing processes escape during act 1208, and the pressure of the cavities 108 equalizes to that of the vacuum chamber.
• RIE is first used to etch through BOX layer l04a. Then, DRIE is used to etch single crystalline layer l04b, and RIE is again used to etch through thermal oxide layer l04c. Since the pressure ports 110 are opened under vacuum, any outgassed materials from the wafer bonding and/or annealing processes escape during act 1208, and the pressure
• the pressure ports 110 are sealed so that the cavities 108 may remain at a suitable pressure for operation.
• the pressure ports 110 may be sealed by any suitable material, or by any suitable process such as but not limited to a sputtering process.
• the pressure ports 110 may be sealed by a multilayered structure formed of multiple materials. Example materials include Al, Cu, Al/Cu alloys, and TiN in any suitable combination.
• the micromachined ultrasonic transducers described herein may be of various types. In some embodiments, they may be capacitive micromachined ultrasonic transducers (CMUTs). In such situations, they may be formed by wafer bonding or sacrificial release methods. In some embodiments, the micromachined ultrasonic transducers are piezoelectric micromachined ultrasonic transducers (PMUTs).
• CMUTs capacitive micromachined ultrasonic transducers
• PMUTs piezoelectric micromachined ultrasonic transducers
• Various types of ultrasound devices may implement MUTs with pressure ports of the types described herein.
• a handheld ultrasound probe may include an ultrasound-on-a-chip comprising MUTs with pressure ports.
• an ultrasound patch may implement the technology.
• a pill may also utilize the technology.
• aspects of the present application provide for such ultrasound devices to include MUTs with pressure ports.
• some aspects may be embodied as one or more methods.
• the acts performed as part of the method(s) may be ordered in any suitable way. Accordingly, embodiments may be constructed in which acts are performed in an order different than illustrated, which may include performing some acts simultaneously, even though shown as sequential acts in illustrative embodiments.
• the phrase“at least one,” in reference to a list of one or more elements, should be understood to mean at least one element selected from any one or more of the elements in the list of elements, but not necessarily including at least one of each and every element specifically listed within the list of elements and not excluding any combinations of elements in the list of elements.
• the terms“approximately” and“about” may be used to mean within ⁇ 20% of a target value in some embodiments, within ⁇ 10% of a target value in some embodiments, within ⁇ 5% of a target value in some embodiments, and yet within ⁇ 2% of a target value in some embodiments.
• the terms“approximately” and“about” may include the target value.

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• 2019
  • 2019-05-02 CN CN201980029781.8A patent/CN112075090B/zh active Active
  • 2019-05-02 KR KR1020207034403A patent/KR20210005208A/ko not_active Ceased
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