WO2019090924A1 - 柔性显示面板、柔性显示面板制作方法及显示装置 - Google Patents

柔性显示面板、柔性显示面板制作方法及显示装置 Download PDF

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WO2019090924A1
WO2019090924A1 PCT/CN2017/118017 CN2017118017W WO2019090924A1 WO 2019090924 A1 WO2019090924 A1 WO 2019090924A1 CN 2017118017 W CN2017118017 W CN 2017118017W WO 2019090924 A1 WO2019090924 A1 WO 2019090924A1
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insulating layer
layer
interlayer insulating
display panel
metal layer
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English (en)
French (fr)
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王幸
杨昆
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/746,552 priority Critical patent/US10658397B2/en
Publication of WO2019090924A1 publication Critical patent/WO2019090924A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • the invention relates to a display device, a flexible display panel and a method for manufacturing the flexible display panel.
  • the present invention provides a display device, a flexible display panel, and a method of fabricating the same, which are directed to solving the above technical problems.
  • the present invention provides a flexible display panel including a flexible substrate, a barrier layer formed on the flexible substrate, a buffer layer formed on the barrier layer, an active layer and a gate formed on the buffer layer a pole insulating layer, a gate metal layer and a second insulating layer formed on the gate insulating layer, a second metal layer and an interlayer insulating layer formed on the second insulating layer, formed on the interlayer insulating layer a second interlayer insulating layer and a source/drain metal layer formed on the second interlayer insulating layer, wherein the second interlayer insulating layer is formed with a first via hole and a second contact hole, the source and drain electrodes The metal layer communicates with the active layer through the first via, and the source/drain metal layer communicates with the second interlayer insulating layer through the second contact hole.
  • the depth of the first through hole is greater than the depth of the second contact hole.
  • the first via hole penetrates the second interlayer insulating layer, the interlayer insulating layer, the second insulating layer, and the gate insulating layer, and terminates in the active layer.
  • the second contact hole is a blind hole formed on the second interlayer insulating layer.
  • the number of the first through holes is two.
  • the gate metal layer and the second metal layer are made of material molybdenum, and the second interlayer insulating layer is made of material polyimide.
  • the present invention also provides a method of fabricating a flexible display panel comprising a flexible substrate, the method of fabricating comprising the steps of:
  • a barrier layer formed on the flexible substrate a buffer layer formed on the barrier layer, an active layer and a gate insulating layer formed on the buffer layer, a gate metal layer formed on the gate insulating layer, and a second insulating layer, a second metal layer and an interlayer insulating layer formed on the second insulating layer, a second interlayer insulating layer formed on the interlayer insulating layer, and a second interlayer insulating layer formed on the second interlayer insulating layer Source and drain metal layers;
  • first via hole and a second contact hole formed on the second interlayer insulating layer, wherein the first via hole communicates with the source/drain metal layer and the active layer, and the second contact hole communicates with the a source/drain metal layer and the second interlayer insulating layer.
  • the present invention also provides a display device comprising the above flexible display panel.
  • the display device, the flexible display panel and the manufacturing method thereof of the present invention ensure that the display panel is not easily broken during the bending process by providing the first through hole and the second contact hole having different depths on the second interlayer insulating layer. Ensure that the flexible display panel is displayed normally during the bending process.
  • FIG. 1 is a block diagram of a display device in an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a flexible display panel in an embodiment of the present invention.
  • FIG. 3 is a flow chart of a method of fabricating a flexible display panel of the present invention.
  • the display device 1 may be a liquid crystal display, a liquid crystal television, a mobile phone, a tablet computer or the like.
  • the display device 1 includes a flexible display panel 100.
  • the flexible display panel 100 includes a transparent glass substrate 101, a flexible substrate 102 coated on the transparent glass substrate 101, a barrier layer 103 formed on the flexible substrate, and a buffer layer 104 formed on the barrier layer 103.
  • the active layer 112 and the gate insulating layer 105 formed on the buffer layer 104, the gate metal layer 111 and the second insulating layer 106 formed on the gate insulating layer 105 are formed on the second insulating layer 106.
  • the active layer 112 is disposed between the buffer layer 104 and the gate insulating layer 105
  • the gate metal layer 111 is disposed on the gate insulating layer 105 and the second insulating layer 106.
  • the second metal layer 110 is interposed between the second insulating layer 106 and the interlayer insulating layer 107.
  • the source and drain metal layer 109 is made of titanium and aluminum.
  • An insulating layer pattern is formed on the second interlayer insulating layer 108 by using a Halftone mask.
  • the flexible substrate 102 has a thickness of 10 to 20 um.
  • the thickness of the barrier layer 103 is 500 to 1000 nm
  • the thickness of the buffer layer 104 is 200 to 300 nm
  • the thickness of the active layer 112 is 40 to 50 nm
  • the thickness of the gate insulating layer 105 is 50 to 200 nm.
  • the thickness of the gate metal layer 111 is 150 to 250 nm.
  • the second insulating layer 106 has a thickness of 50 to 200 nm and the second metal layer 110 has a thickness of 150 to 250 nm.
  • the interlayer insulating layer 107 has a thickness of 500 to 700 nm
  • the second interlayer insulating layer 108 has a thickness of 1.0 to 3 ⁇ m
  • the source/drain metal layer 109 has a thickness of 400 to 600 nm.
  • the gate metal layer 111 and the second metal layer 110 are made of material molybdenum
  • the second interlayer insulating layer 108 is made of material polyimide.
  • a first through hole 113 and a second contact hole 114 are formed in the second interlayer insulating layer 108.
  • the number of the first through holes 113 is two, and the number of the first through holes 113 and the second contact holes 114 is equal.
  • the number of the first through holes 113 and the second contact holes 114 may be differently set according to the size, shape, structure or other related parameters of the flexible display panel.
  • the shapes of the first through hole 113 and the second contact hole 114 may be the same or different, and the specific shape may be a circular shape or a square shape, but is not limited thereto.
  • the depth of the first through hole 113 is greater than the depth of the second contact hole.
  • the source/drain metal layer 109 is in communication with the active layer 112 through the first via 113, and the source/drain metal layer 109 is in communication with the second interlayer insulating layer 108 through the second contact hole 114.
  • the first via hole 113 penetrates the second interlayer insulating layer 108, the interlayer insulating layer 107, the second insulating layer 106, and the gate insulating layer 105, and terminates in the active layer 112.
  • the second contact hole 114 is a blind hole formed in the second interlayer insulating layer 108.
  • a method for fabricating a flexible display panel of the present invention includes the following steps:
  • Step S301 a barrier layer 103 formed on the flexible substrate, a buffer layer 104 formed on the barrier layer 103, an active layer 112 and a gate insulating layer 105 formed on the buffer layer 104, formed on the gate insulating layer a gate metal layer 111 and a second insulating layer 106 on the layer 105, a second metal layer 110 and an interlayer insulating layer 107 formed on the second insulating layer 106, and a layer formed on the interlayer insulating layer 107 A two-layer insulating layer 108 and a source/drain metal layer 109 formed on the second interlayer insulating layer 108.
  • Step S302 a first via hole 113 and a second contact hole 114 formed on the second interlayer insulating layer 108, wherein the first via hole 113 communicates with the source/drain metal layer 109 and the active layer 112.
  • the second contact hole 114 communicates with the source/drain metal layer 109 and the second interlayer insulating layer 108.
  • the flexible display panel 100 of the present invention ensures that the display panel 100 is not easily broken during the bending process by providing the first through holes 113 and the second contact holes 114 having different depths on the second interlayer insulating layer 108, thereby ensuring the flexible display panel. Displayed normally during the bending process.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

提供一种柔性显示面板（100），其包括柔性衬底（102）、形成于柔性衬底（102）上的阻挡层（103）、形成于阻挡层（103）上的缓冲层（104）、形成于缓冲层（104）上的有源层（112）及栅极绝缘层（105）、形成于栅极绝缘层（105）上的栅极金属层（111）及第二层绝缘层（106）、形成于第二层绝缘层（106）上的第二层金属层（110）及层间绝缘层（107）、形成于层间绝缘层（107）上的第二层间绝缘层（108）及形成于第二层间绝缘层（108）上的源漏极金属层（109）。第二层间绝缘层（108）上形成有第一通孔（113）连通源漏极金属层（109）及有源层（112），及第二接触孔（114）连通源漏金属层（109）及第二层间绝缘层（108）。还提供一种柔性显示面板（100）的制作方法及包括显示面板的显示装置（1）。柔性显示面板（100）可保证柔性显示面板在弯折过程中的正常显示。

Description

柔性显示面板、柔性显示面板制作方法及显示装置 技术领域
本发明涉及一种显示装置、柔性显示面板及柔性显示面板的制作方法。
背景技术
随着显示面板技术的发展，近几年柔性显示面板显示技术得到了飞速的发展，但是柔性显示面板在弯折过程中钛铝钛走线容易断裂，导致显示面板被损坏。
发明内容
有鉴于此，本发明提供一种显示装置、柔性显示面板及其制作方法，旨在解决上述的技术问题。
本发明提供一种柔性显示面板，所述显示面板包括柔性衬底、形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层，所述第二层间绝缘层上形成有第一通孔和第二接触孔，所述源漏极金属层通过所述第一通孔与有源层连通，所述源漏金属层通过第二接触孔与第二层间绝缘层连通。
其中，第一通孔的深度大于所述第二接触孔的深度。
其中，所述第一通孔贯穿所述第二层间绝缘层、所述层间绝缘层、所述第二层绝缘层及所述栅极绝缘层，并止于所述有源层。
其中，所述第二接触孔为开设于所述第二层间绝缘层上的盲孔。
其中，所述第一通孔的数量为两个。
其中，所述第一通孔和第二接触孔的数量相等。
其中，所述栅极金属层及第二层金属层为材料钼制成，所述第二层间绝缘层为材料聚酰亚胺制成。
本发明还提供一种柔性显示面板的制作方法，所述柔性显示面板包括柔性 衬底，所述制作方法包括以下步骤：
形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层；及
形成于所述第二层间绝缘层上的第一通孔和第二接触孔，其中，第一通孔连通所述源漏极金属层与所述有源层，第二接触孔连通所述源漏金属层与所述第二层间绝缘层。
本发明还提供一种显示装置，其包括上述的柔性显示面板。
本发明所述的显示装置、柔性显示面板及其制作方法，通过在第二层间绝缘层上设置深度不同的第一通孔和第二接触孔来保证显示面板在弯折过程中不易断裂，保证柔性显示面板在弯折过程中正常显示。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明一实施例中的显示装置的模块示意图。
图2是本发明一实施例中的柔性显示面板的结构示意图。
图3是本发明柔性显示面板的制作方法流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1至2所示，为本发明一实施例中显示装置1的示意图。本实施方式 中，该显示装置1可以为液晶显示器、液晶电视、手机、平板电脑等。该显示装置1包括柔性显示面板100。该柔性显示面板100包括透明玻璃基板101、涂覆于所述透明玻璃基板101上的柔性衬底102、形成于所述柔性衬底上的阻挡层103、形成于阻挡层103上的缓冲层104、形成于缓冲层104上的有源层112及栅极绝缘层105、形成于栅极绝缘层105上的栅极金属层111及第二层绝缘层106、形成于第二层绝缘层106上的第二层金属层110及层间绝缘层107、形成于层间绝缘层107上的第二层间绝缘层108及形成于第二层间绝缘层108上的源漏极金属层109。本实施方式中，所述有源层112置于所述缓冲层104与栅极绝缘层105之间，所述栅极金属层111置于所述栅极绝缘层105与第二层绝缘层106之间，所述第二层金属层110置于所述第二层绝缘层106与所述层间绝缘层107之间。
在本实施方式中，所述源漏极金属层109为材料钛和铝制成。所述第二层间绝缘层108上采用Halftone光罩的方式形成有绝缘层图案。所述柔性衬底102的厚度为10～20um。所述阻挡层103的厚度为500～1000nm、所述缓冲层104的厚度为200～300nm、所述有源层112的厚度为40～50nm、所述栅极绝缘层105的厚度为50～200nm及所述栅极金属层111的厚度为150～250nm。所述第二层绝缘层106的厚度为50～200nm及所述第二层金属层110的厚度为150～250nm。所述层间绝缘层107的厚度为500～700nm、所述第二层间绝缘层108的厚度为1.0～3um及所述源漏极金属层109的厚度为400～600nm。所述栅极金属层111及第二层金属层110为材料钼制成，所述第二层间绝缘层108为材料聚酰亚胺制成。
所述第二层间绝缘层108上形成有第一通孔113及第二接触孔114。本实施方式中，该第一通孔113的数量为两个，所述第一通孔113和第二接触孔114的数量相等。其他实施方式中，该第一通孔113及第二接触孔114的数量可根据柔性显示面板的尺寸，形状，结构或其他相关参数等的不同进行不同的设置。本实施方式中，该第一通孔113及第二接触孔114的形状可相同也可不同，具体形状可为圆形也可为方形，但是并不限定于此。该第一通孔113的深度大于所述第二接触孔的深度。
所述源漏极金属层109通过所述第一通孔113与所述有源层112连通，所 述源漏金属层109通过第二接触孔114与所述第二层间绝缘层108连通，如此，可以保证显示面板100在弯折过程中，钛铝钛走线不易断裂，保证柔性显示面板在弯折过程中正常显示。具体地，该第一通孔113贯穿该第二层间绝缘层108、该层间绝缘层107、该第二层绝缘层106及该栅极绝缘层105，并止于该有源层112，该第二接触孔114为开设于所述第二层间绝缘层108上的盲孔。
如图3所示，为本发明柔性显示面板的制作方法，该方法包括以下步骤：
步骤S301，形成于所述柔性衬底上的阻挡层103、形成于阻挡层103上的缓冲层104、形成于缓冲层104上的有源层112及栅极绝缘层105、形成于栅极绝缘层105上的栅极金属层111及第二层绝缘层106、形成于第二层绝缘层106上的第二层金属层110及层间绝缘层107、形成于层间绝缘层107上的第二层间绝缘层108及形成于第二层间绝缘层108上的源漏极金属层109。
步骤S302，形成于所述第二层间绝缘层108上的第一通孔113和第二接触孔114，其中，第一通孔113连通所述源漏极金属层109与所述有源层112，第二接触孔114连通所述源漏金属层109与所述第二层间绝缘层108。
本发明的柔性显示面板100，通过在第二层间绝缘层108上设置深度不同的第一通孔113及第二接触孔114来保证显示面板100在弯折过程中不易断裂，保证柔性显示面板在弯折过程中正常显示。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (16)

  1. 一种柔性显示面板，所述显示面板包括柔性衬底、形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层，其特征在于：所述第二层间绝缘层上形成有第一通孔和第二接触孔，所述源漏极金属层通过所述第一通孔与所述有源层连通，所述源漏金属层通过第二接触孔与所述第二层间绝缘层连通。
  2. 如权利要求1所述的柔性显示面板，其特征在于：第一通孔的深度大于所述第二接触孔的深度。
  3. 如权利要求1所述的柔性显示面板，其特征在于：所述第一通孔贯穿所述第二层间绝缘层、所述层间绝缘层、所述第二层绝缘层及所述栅极绝缘层并止于所述有源层。
  4. 如权利要求1所述的柔性显示面板，其特征在于：所述第二接触孔为开设于所述第二层间绝缘层上的盲孔。
  5. 如权利要求1所述的柔性显示面板，其特征在于：所述第一通孔的数量为两个。
  6. 如权利要求5所述的柔性显示面板，其特征在于：所述第一通孔和第二接触孔的数量相等。
  7. 如权利要求1所述的柔性显示面板，其特征在于：所述栅极金属层及第二层金属层为材料钼制成，所述第二层间绝缘层为材料聚酰亚胺制成。
  8. 一种柔性显示面板的制作方法，所述柔性显示面板包括柔性衬底，其特征在于：所述制作方法包括以下步骤：
    形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层；及
    形成于所述第二层间绝缘层上的第一通孔和第二接触孔，其中，第一通孔 连通所述源漏极金属层与所述有源层，第二接触孔连通所述源漏金属层与所述第二层间绝缘层。
  9. 如权利要求8所述的柔性显示面板的制作方法，其特征在于：所述第一通孔的深度大于所述第二接触孔的深度。
  10. 一种显示装置，其特征在于：包括柔性显示面板，所述显示面板包括柔性衬底、形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层，其特征在于：所述第二层间绝缘层上形成有第一通孔和第二接触孔，所述源漏极金属层通过所述第一通孔与所述有源层连通，所述源漏金属层通过第二接触孔与所述第二层间绝缘层连通。
  11. 如权利要求10所述的显示装置，其特征在于：第一通孔的深度大于所述第二接触孔的深度。
  12. 如权利要求10所述的显示装置，其特征在于：所述第一通孔贯穿所述第二层间绝缘层、所述层间绝缘层、所述第二层绝缘层及所述栅极绝缘层并止于所述有源层。
  13. 如权利要求10所述的显示装置，其特征在于：所述第二接触孔为开设于所述第二层间绝缘层上的盲孔。
  14. 如权利要求10所述的显示装置，其特征在于：所述第一通孔的数量为两个。
  15. 如权利要求14所述的显示装置，其特征在于：所述第一通孔和第二接触孔的数量相等。
  16. 如权利要求10所述的显示装置，其特征在于：所述栅极金属层及第二层金属层为材料钼制成，所述第二层间绝缘层为材料聚酰亚胺制成。
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